CN204559432U - For the high-frequency inverter circuit of high-voltage test electric power - Google Patents
For the high-frequency inverter circuit of high-voltage test electric power Download PDFInfo
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- CN204559432U CN204559432U CN201520328406.2U CN201520328406U CN204559432U CN 204559432 U CN204559432 U CN 204559432U CN 201520328406 U CN201520328406 U CN 201520328406U CN 204559432 U CN204559432 U CN 204559432U
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Abstract
For the high-frequency inverter circuit of high-voltage test electric power, relate to a kind of high-frequency inverter circuit, in order to solve the volume that existing high-voltage test electric power exists, the problem that weight is large.Power supply is each module energy supply, PWM circuit for generating produces pwm signal and sends to full bridge driving circuit, pwm signal carries out isolating the MOSFET driven in bridge inverter main circuit with power amplification being used for by full bridge driving circuit, and external dc voltage transition is that alternating voltage exports by bridge inverter main circuit.Exporting boosting by being converted to by the industrial-frequency alternating current after rectification after high-frequency alternating current, greatly can reduce the volume of the magnetic elements such as step-up transformer in experiment power supply, thus realizing the object of power supply miniaturization, good portability.MOSFET in main circuit supports the wide range regulation of power supply output frequency, can match with various high frequency transformer easily, simplifies the design of high-voltage test electric power and greatly reduces its volume and weight.
Description
Technical field
The utility model relates to a kind of high-frequency inverter circuit for high-voltage test electric power.
Background technology
At present, in high pressure field, when withstand voltage or partial discharge test are carried out to test product, all need high-voltage test electric power, because using Industrial Frequency Transformer, Power Frequency High Voltage Test power supply causes that volume is large, weight is large, be difficult to satisfied miniaturization and portable demand.
Utility model content
The utility model in order to solve the volume that existing high-voltage test electric power exists, the problem that weight is large, and then provides a kind of high-frequency inverter circuit for high-voltage test electric power.
The utility model is solve the problems of the technologies described above the technical scheme taked to be: a kind of high-frequency inverter circuit for high-voltage test electric power, described high-frequency inverter circuit comprises power supply circuit, PWM circuit for generating, full bridge driving circuit and bridge inverter main circuit, power supply circuit is PWM circuit for generating, full bridge driving circuit is powered, PWM circuit for generating produces pwm signal and sends to full bridge driving circuit, pwm signal carries out isolating the MOSFET driven in bridge inverter main circuit with power amplification being used for by full bridge driving circuit, external dc voltage transition is that alternating voltage exports by bridge inverter main circuit.
The beneficial effects of the utility model are:
MOSFET in the utility model main circuit supports the wide range regulation of power supply output frequency, can match with various high frequency transformer easily, and driving circuit structure is simple, can simplify the design of high-voltage test electric power and greatly reduce its volume and weight.There is cost low, the advantage that volume is little.The utility model exports boosting after the industrial-frequency alternating current after rectification being converted to high-frequency alternating current, can with the condition of power frequency equivalent capability under greatly reduce the volume of the magnetic element such as step-up transformer in experiment power supply, thus realize the object of power supply miniaturization, good portability.Power supply is each module energy supply, PWM circuit for generating produces pwm signal and sends to full bridge driving circuit, pwm signal carries out isolating the MOSFET driven in bridge inverter main circuit with power amplification being used for by full bridge driving circuit, and external dc voltage transition is that alternating voltage exports by bridge inverter main circuit.
Accompanying drawing explanation
Fig. 1 is overall structure block diagram of the present utility model; Fig. 2 is the circuit diagram of power supply in the utility model; Fig. 3 is the circuit diagram of the PWM circuit for generating in the utility model; Fig. 4 is the circuit diagram of full bridge driving circuit in the utility model; Fig. 5 is the circuit diagram of bridge inverter main circuit in the utility model.
Embodiment
Embodiment one: as shown in Figure 1, the high-frequency inverter circuit for high-voltage test electric power described in present embodiment, comprises power supply, PWM circuit for generating, full bridge driving circuit and bridge inverter main circuit; Power supply is PWM circuit for generating, full bridge driving circuit energy supply, PWM circuit for generating produces pwm signal and sends to full bridge driving circuit, pwm signal carries out isolating the MOSFET driven in bridge inverter main circuit with power amplification being used for by full bridge driving circuit, and external dc voltage transition is that alternating voltage exports by bridge inverter main circuit.
Embodiment two: as shown in Figure 2, power supply circuit described in present embodiment is made up of 12 coucher frequency power transformers, industrial frequency rectifying bridge and linear voltage stabilization module, industrial frequency rectifying bridge is made up of diode DSM1, DSM2, DSM3, DSM4, and linear voltage stabilization module is made up of linear voltage stabilization chip and filter capacitor CSM1, CSM2, CSM3, CSM4.1,5 pin of Industrial Frequency Transformer ICSM1 connect 220 volts of interchanges, 7 pin of ICSM1 connect the anode of diode DSM1 and the negative electrode of DSM3,9 pin of ICSM1 connect the anode of diode DSM2 and the negative electrode of DSM4, the negative electrode of DSM1 is connected with the negative electrode of DSM2 and is connected the positive pole of polar capacitor CSM1, one end of nonpolar electric capacity CSM2 and the IN pin of voltage stabilizing chip S1, and the anode of DSM3 is connected with the anode of DSM4 and is connected the negative pole of polar capacitor CSM1, the other end of nonpolar electric capacity CSM2 and the GND pin of voltage stabilizing chip S1.Polar capacitor CSM3, nonpolar electric capacity CSM4 are connected across between the GND ,+12V pin of S1, and the positive pole of CSM3 connects+12V pin, negative pole connects GND pin.+ 12V the pin of S1 export for positive ten second of the three ten-day periods of the hot season voltage, GND pin ground connection.Other composition and annexation identical with embodiment one.
Embodiment three: as shown in Figure 3, PWM circuit for generating described in present embodiment is made up of pwm chip C1 and peripheral circuit thereof, resistance RC1 is connected across between the In.ip pin of chip C1 and Vref pin, electric capacity CC4, resistance RC2 is connected across between the In.ip pin of C1 and ground, resistance RC3 is connected across between the no.ip pin of C1 and ground, electric capacity CC1 is connected across between the CT pin of C1 and ground, resistance RC4 is connected across between the CT pin of C1 and Disc pin, be connected across after variable resistor RC7 and resistance RC4 is in series between the RT pin of C1 and ground, the positive pole of polar capacitor CC2 connects between Soft-S pin and ground, minus earth, polar capacitor electric capacity CC5 positive pole connects VCC pin, minus earth, electric capacity CC6 is connected across between the VCC pin of C1 and GND pin, resistance RC6, be connected across between the shut pin of C1 and ground after electric capacity CC3 is in parallel, the GND pin ground connection of C1, VC and VCC pin connect positive ten second of the three ten-day periods of the hot season power supply, the comp pin of C1 is unsettled, the OpA of C1, OpB pin is complementary PWM signals output pin, connect full bridge driving circuit.Other composition and annexation identical with embodiment one or two.
Pwm chip can adopt SG3525, its frequency fixing PWM chip produced for American Silicon General Corporation, and have the function such as soft start, under-voltage locking, the push-pull type structure of output stage effectively can promote turn-off speed.
Embodiment four: as shown in Figure 4, the full bridge driving circuit in present embodiment is made up of half-bridge drive circuit one and half-bridge drive circuit two, and both circuit topological structures are identical, by half-bridge driven chip and peripheral circuit composition thereof.
The LO pin of the half-bridge driven chip E1 of half-bridge drive circuit one connects negative electrode and the resistance RD2 of diode DD3, diode DD3 and resistance RD2 is in parallel, between the anode that resistance RD4 is connected across diode DD3 and ground, the anode of DD3 connects bridge inverter main circuit, the COM pin of E1 is through resistance RD00 ground connection, the VCC pin of E1 connect positive ten second of the three ten-day periods of the hot season power supply, electric capacity CD4 is connected across between the COM pin of E1 and VCC pin, the positive pole of polar capacitor CD5 connects the VCC pin of E1, negative pole connects the COM pin of E1, the VS pin connecting resistance RD0 of E1, RT pin connects diode DD1 negative electrode, DD1 anode connect positive ten second of the three ten-day periods of the hot season power supply, electric capacity CD3 is connected across the VS pin of E1, between VB pin, the LO pin of E1 connects negative electrode and the resistance RD1 of diode DD2, diode DD2 and resistance RD1 is in parallel, the anode of DD2 connects bridge inverter main circuit, resistance RD3 is connected across DD2 anode and suspends between ground B1floatgnd, the VDD pin of E1 connect positive ten second of the three ten-day periods of the hot season power supply, the positive pole of polar capacitor CD1 connects the VDD pin of E1, minus earth, electric capacity CD2 is connected across between the VDD pin of E1 and SD pin, the SD pin of E1, VSS pin ground connection, PWM input pin Hin, Lin pin connects the OpA of C1 respectively, OpB pin.
The LO pin of the half-bridge driven chip E2 of half-bridge drive circuit two connects negative electrode and the resistance RE2 of diode DE3, diode DE3 and resistance RE2 is in parallel, between the anode that resistance RE4 is connected across diode DE3 and ground, the negative electrode of DE3 connects bridge inverter main circuit, the COM pin of E2 is through resistance RE00 ground connection, the VCC pin of E1 connect positive ten second of the three ten-day periods of the hot season power supply, electric capacity CE4, be connected across between the COM pin of E2 and VCC pin, the positive pole of polar capacitor CE5 connects the VCC pin of E2, negative pole connects the COM pin of E2, the VS pin connecting resistance RE0 of E2, RT pin connects diode DE1 negative electrode, DE1 anode connect positive ten second of the three ten-day periods of the hot season power supply, electric capacity CE3 is connected across the VS pin of E2, between VB pin, the LO pin of E2 connects negative electrode and the resistance RE1 of diode DE2, diode DE2 and resistance RE1 is in parallel, the anode of DE2 connects bridge inverter main circuit, resistance RE3 is connected across DE2 anode and suspends between ground B2floatgnd, the VDD pin of E2 connect positive ten second of the three ten-day periods of the hot season power supply, the positive pole of polar capacitor CE1 connects the VDD pin of E2, minus earth, CE2 is connected across between the VDD pin of E2 and SD pin, the SD pin of E1, VSS pin ground connection, PWM input pin Hin, Lin pin connects the OpB of C1 respectively, OpA pin.
The IR2110 half-bridge MOSFET/IGBT driving chip that half-bridge driven chip can adopt American I R company to produce, it adopts Bootstrap technology, there is high integration, can realize controlling the potential isolation with driving side, reducing volume and the cost of drive circuit by reducing drive circuit power supply number.Other composition and annexation identical with embodiment three.
Embodiment five: as shown in Figure 4, bridge inverter main circuit in present embodiment, it is characterized in that: described circuit is made up of four brachium pontis and buffer capacitor, MOSFET semiconductor switch Q1, Q2, Q3, Q4 form four brachium pontis of inverter circuit respectively with fast recovery diode D1, D2, D3, D4 inverse parallel, the MOSFET model of four brachium pontis is identical.The grid of Q1 connects the anode of diode DD2 in half-bridge drive circuit one, the source electrode of Q1 meets the ground B1floatgnd that suspends, the grid of Q2 connects the anode of diode DD3 in half-bridge drive circuit one, the source ground of Q2, the grid of Q3 connects the anode of diode DE3 in half-bridge drive circuit two, the source electrode of Q3 meets the ground B2floatgnd that suspends, the grid of Q4 connects the anode of diode DE3 in half-bridge drive circuit two, the source ground of Q4, Q1, the drain electrode of Q3 is connected, external dc voltage is applied to Q1, between the drain electrode of Q3 and ground, suspend ground B1floatgnd, B2floatgnd is alternating voltage output node.Csnubber is the buffer capacitor of inverter circuit, and prevent MOSFET over-voltage breakdown, Csnubber is connected across between the drain electrode of Q1, Q3 and ground.Other composition and annexation identical with embodiment four.
Above embodiment is only be described preferred implementation of the present utility model; not scope of the present utility model is limited; under the prerequisite not departing from the utility model design spirit; the various distortion that the common engineers and technicians in this area make the technical solution of the utility model and improvement, all should fall into the protection range that claims of the present utility model are determined.
Claims (5)
1. the high-frequency inverter circuit for high-voltage test electric power, it is characterized in that: described high-frequency inverter circuit comprises power supply circuit, PWM circuit for generating, full bridge driving circuit and bridge inverter main circuit, power supply circuit is PWM circuit for generating, full bridge driving circuit is powered, PWM circuit for generating produces pwm signal and sends to full bridge driving circuit, pwm signal carries out isolating the MOSFET driven in bridge inverter main circuit with power amplification being used for by full bridge driving circuit, and external dc voltage transition is that alternating voltage exports by bridge inverter main circuit.
2. the high-frequency inverter circuit for high-voltage test electric power according to claim 1, it is characterized in that: described power supply circuit is by 12 coucher frequency power transformers, industrial frequency rectifying bridge and linear voltage stabilization module composition, industrial frequency rectifying bridge is by diode DSM1, DSM2, DSM3 and DSM4 forms, linear voltage stabilization module is by linear voltage stabilization chip and filter capacitor CSM1, CSM2, CSM3 and CSM4 forms, 1 of Industrial Frequency Transformer ICSM1, 5 pin connect 220 volts of interchanges, 7 pin of ICSM1 connect the anode of diode DSM1 and the negative electrode of DSM3, 9 pin of ICSM1 connect the anode of diode DSM2 and the negative electrode of DSM4, the negative electrode of DSM1 is connected with the negative electrode of DSM2 and is connected the positive pole of polar capacitor CSM1, one end of nonpolar electric capacity CSM2 and the IN pin of voltage stabilizing chip S1, the anode of DSM3 is connected with the anode of DSM4 and is connected the negative pole of polar capacitor CSM1, the other end of nonpolar electric capacity CSM2 and the GND pin of voltage stabilizing chip S1, polar capacitor CSM3, nonpolar electric capacity CSM4 are connected across between the GND ,+12V pin of S1, and the positive pole of CSM3 connects+12V pin, negative pole connects GND pin, + 12V the pin of S1 export for positive ten second of the three ten-day periods of the hot season voltage, GND pin ground connection.
3. the high-frequency inverter circuit for high-voltage test electric power according to claim 1 and 2, it is characterized in that: described PWM circuit for generating is made up of pwm chip C1 and peripheral circuit thereof, resistance RC1 is connected across between the In.ip pin of chip C1 and Vref pin, electric capacity CC4, resistance RC2 is connected across between the In.ip pin of C1 and ground, resistance RC3 is connected across between the no.ip pin of C1 and ground, electric capacity CC1 is connected across between the CT pin of C1 and ground, resistance RC4 is connected across between the CT pin of C1 and Disc pin, be connected across after variable resistor RC7 and resistance RC4 is in series between the RT pin of C1 and ground, the positive pole of polar capacitor CC2 connects between Soft-S pin and ground, minus earth, polar capacitor electric capacity CC5 positive pole connects VCC pin, minus earth, electric capacity CC6 is connected across between the VCC pin of C1 and GND pin, resistance RC6, be connected across between the shut pin of C1 and ground after electric capacity CC3 is in parallel, the GND pin ground connection of C1, VC and VCC pin connect positive ten second of the three ten-day periods of the hot season power supply, the comp pin of C1 is unsettled, the OpA of C1, OpB pin is complementary PWM signals output pin, for connecting full bridge driving circuit.
4. the high-frequency inverter circuit for high-voltage test electric power according to claim 3, it is characterized in that: described full bridge driving circuit is made up of half-bridge drive circuit one and half-bridge drive circuit two, both circuit topological structures are identical, by half-bridge driven chip and peripheral circuit composition thereof;
The LO pin of the half-bridge driven chip E1 of half-bridge drive circuit one connects negative electrode and the resistance RD2 of diode DD3, diode DD3 and resistance RD2 is in parallel, between the anode that resistance RD4 is connected across diode DD3 and ground, the anode of DD3 connects bridge inverter main circuit, the COM pin of E1 is through resistance RD00 ground connection, the VCC pin of E1 connect positive ten second of the three ten-day periods of the hot season power supply, electric capacity CD4 is connected across between the COM pin of E1 and VCC pin, the positive pole of polar capacitor CD5 connects the VCC pin of E1, negative pole connects the COM pin of E1, the VS pin connecting resistance RD0 of E1, RT pin connects diode DD1 negative electrode, DD1 anode connect positive ten second of the three ten-day periods of the hot season power supply, electric capacity CD3 is connected across the VS pin of E1, between VB pin, the LO pin of E1 connects negative electrode and the resistance RD1 of diode DD2, diode DD2 and resistance RD1 is in parallel, the anode of DD2 connects bridge inverter main circuit, resistance RD3 is connected across DD2 anode and suspends between ground B1floatgnd, the VDD pin of E1 connect positive ten second of the three ten-day periods of the hot season power supply, the positive pole of polar capacitor CD1 connects the VDD pin of E1, minus earth, electric capacity CD2 is connected across between the VDD pin of E1 and SD pin, the SD pin of E1, VSS pin ground connection, PWM input pin Hin, Lin pin connects the OpA of C1 respectively, OpB pin,
The LO pin of the half-bridge driven chip E2 of half-bridge drive circuit two connects negative electrode and the resistance RE2 of diode DE3, diode DE3 and resistance RE2 is in parallel, between the anode that resistance RE4 is connected across diode DE3 and ground, the negative electrode of DE3 connects bridge inverter main circuit, the COM pin of E2 is through resistance RE00 ground connection, the VCC pin of E1 connect positive ten second of the three ten-day periods of the hot season power supply, electric capacity CE4, be connected across between the COM pin of E2 and VCC pin, the positive pole of polar capacitor CE5 connects the VCC pin of E2, negative pole connects the COM pin of E2, the VS pin connecting resistance RE0 of E2, RT pin connects diode DE1 negative electrode, DE1 anode connect positive ten second of the three ten-day periods of the hot season power supply, electric capacity CE3 is connected across the VS pin of E2, between VB pin, the LO pin of E2 connects negative electrode and the resistance RE1 of diode DE2, diode DE2 and resistance RE1 is in parallel, the anode of DE2 connects bridge inverter main circuit, resistance RE3 is connected across DE2 anode and suspends between ground B2floatgnd, the VDD pin of E2 connect positive ten second of the three ten-day periods of the hot season power supply, the positive pole of polar capacitor CE1 connects the VDD pin of E2, minus earth, CE2 is connected across between the VDD pin of E2 and SD pin, the SD pin of E1, VSS pin ground connection, PWM input pin Hin, Lin pin connects the OpB of C1 respectively, OpA pin.
5. the high-frequency inverter circuit for high-voltage test electric power according to claim 4, it is characterized in that: described bridge inverter main circuit is made up of four brachium pontis and buffer capacitor, MOSFET semiconductor switch Q1, Q2, Q3, Q4 form four brachium pontis of inverter circuit respectively with fast recovery diode D1, D2, D3, D4 inverse parallel, the MOSFET model of four brachium pontis is identical, the grid of Q1 connects the anode of diode DD2 in half-bridge drive circuit one, the source electrode of Q1 meets the ground B1floatgnd that suspends, the grid of Q2 connects the anode of diode DD3 in half-bridge drive circuit one, the source ground of Q2, the grid of Q3 connects the anode of diode DE3 in half-bridge drive circuit two, the source electrode of Q3 meets the ground B2floatgnd that suspends, the grid of Q4 connects the anode of diode DE3 in half-bridge drive circuit two, the source ground of Q4, Q1, the drain electrode of Q3 is connected, external dc voltage is applied to Q1, between the drain electrode of Q3 and ground, suspend ground B1floatgnd, B2floatgnd is alternating voltage output node, Csnubber is the buffer capacitor of inverter circuit, and prevent MOSFET over-voltage breakdown, Csnubber is connected across between the drain electrode of Q1, Q3 and ground.
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| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201520328406.2U CN204559432U (en) | 2015-05-20 | 2015-05-20 | For the high-frequency inverter circuit of high-voltage test electric power |
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| Application Number | Priority Date | Filing Date | Title |
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| CN201520328406.2U CN204559432U (en) | 2015-05-20 | 2015-05-20 | For the high-frequency inverter circuit of high-voltage test electric power |
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Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN108365744A (en) * | 2018-01-03 | 2018-08-03 | 浙江正泰电器股份有限公司 | The IGBT drive circuit of frequency converter |
| CN113099564A (en) * | 2021-03-30 | 2021-07-09 | 浙江工业大学 | High-frequency magnetic heating device for cell magnetic heating genetics research |
| CN114337346A (en) * | 2021-11-26 | 2022-04-12 | 南京轨道交通系统工程有限公司 | Single-phase full-bridge PWM signal generator |
| CN115242106A (en) * | 2022-07-29 | 2022-10-25 | 无锡惠芯半导体有限公司 | High-frequency MOSFET half-bridge intelligent power module |
-
2015
- 2015-05-20 CN CN201520328406.2U patent/CN204559432U/en not_active Expired - Fee Related
Cited By (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN108365744A (en) * | 2018-01-03 | 2018-08-03 | 浙江正泰电器股份有限公司 | The IGBT drive circuit of frequency converter |
| CN113099564A (en) * | 2021-03-30 | 2021-07-09 | 浙江工业大学 | High-frequency magnetic heating device for cell magnetic heating genetics research |
| CN113099564B (en) * | 2021-03-30 | 2022-07-22 | 浙江工业大学 | High-frequency magnetic heating device for cell magnetic heating genetics research |
| CN114337346A (en) * | 2021-11-26 | 2022-04-12 | 南京轨道交通系统工程有限公司 | Single-phase full-bridge PWM signal generator |
| CN114337346B (en) * | 2021-11-26 | 2024-03-19 | 南京轨道交通系统工程有限公司 | Single-phase full-bridge PWM signal generator |
| CN115242106A (en) * | 2022-07-29 | 2022-10-25 | 无锡惠芯半导体有限公司 | High-frequency MOSFET half-bridge intelligent power module |
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| TR01 | Transfer of patent right |
Effective date of registration: 20170428 Address after: 150080 Nangang science and Technology University, Heilongjiang Province, No., science and Technology University Road, room 503, room 52 Patentee after: Heilongjiang run electric technology Co.,Ltd. Address before: 150080 West District, Harbin, Heilongjiang Province,, Harbin University of Science and Technology, No. 52 Patentee before: Harbin University of Science and Technology |
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| CF01 | Termination of patent right due to non-payment of annual fee | ||
| CF01 | Termination of patent right due to non-payment of annual fee |
Granted publication date: 20150812 |