CN104578877A - Single-stage boost inverter - Google Patents
Single-stage boost inverter Download PDFInfo
- Publication number
- CN104578877A CN104578877A CN201410785459.7A CN201410785459A CN104578877A CN 104578877 A CN104578877 A CN 104578877A CN 201410785459 A CN201410785459 A CN 201410785459A CN 104578877 A CN104578877 A CN 104578877A
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- inductance
- electric capacity
- diode
- stage boost
- boost inverter
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Classifications
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- H—ELECTRICITY
- H02—GENERATION; CONVERSION OR DISTRIBUTION OF ELECTRIC POWER
- H02M—APPARATUS FOR CONVERSION BETWEEN AC AND AC, BETWEEN AC AND DC, OR BETWEEN DC AND DC, AND FOR USE WITH MAINS OR SIMILAR POWER SUPPLY SYSTEMS; CONVERSION OF DC OR AC INPUT POWER INTO SURGE OUTPUT POWER; CONTROL OR REGULATION THEREOF
- H02M7/00—Conversion of ac power input into dc power output; Conversion of dc power input into ac power output
- H02M7/42—Conversion of dc power input into ac power output without possibility of reversal
- H02M7/44—Conversion of dc power input into ac power output without possibility of reversal by static converters
- H02M7/48—Conversion of dc power input into ac power output without possibility of reversal by static converters using discharge tubes with control electrode or semiconductor devices with control electrode
- H02M7/53—Conversion of dc power input into ac power output without possibility of reversal by static converters using discharge tubes with control electrode or semiconductor devices with control electrode using devices of a triode or transistor type requiring continuous application of a control signal
- H02M7/537—Conversion of dc power input into ac power output without possibility of reversal by static converters using discharge tubes with control electrode or semiconductor devices with control electrode using devices of a triode or transistor type requiring continuous application of a control signal using semiconductor devices only, e.g. single switched pulse inverters
- H02M7/5387—Conversion of dc power input into ac power output without possibility of reversal by static converters using discharge tubes with control electrode or semiconductor devices with control electrode using devices of a triode or transistor type requiring continuous application of a control signal using semiconductor devices only, e.g. single switched pulse inverters in a bridge configuration
-
- H—ELECTRICITY
- H02—GENERATION; CONVERSION OR DISTRIBUTION OF ELECTRIC POWER
- H02M—APPARATUS FOR CONVERSION BETWEEN AC AND AC, BETWEEN AC AND DC, OR BETWEEN DC AND DC, AND FOR USE WITH MAINS OR SIMILAR POWER SUPPLY SYSTEMS; CONVERSION OF DC OR AC INPUT POWER INTO SURGE OUTPUT POWER; CONTROL OR REGULATION THEREOF
- H02M1/00—Details of apparatus for conversion
- H02M1/32—Means for protecting converters other than automatic disconnection
-
- H—ELECTRICITY
- H02—GENERATION; CONVERSION OR DISTRIBUTION OF ELECTRIC POWER
- H02M—APPARATUS FOR CONVERSION BETWEEN AC AND AC, BETWEEN AC AND DC, OR BETWEEN DC AND DC, AND FOR USE WITH MAINS OR SIMILAR POWER SUPPLY SYSTEMS; CONVERSION OF DC OR AC INPUT POWER INTO SURGE OUTPUT POWER; CONTROL OR REGULATION THEREOF
- H02M1/00—Details of apparatus for conversion
- H02M1/0003—Details of control, feedback or regulation circuits
- H02M1/0038—Circuits or arrangements for suppressing, e.g. by masking incorrect turn-on or turn-off signals, e.g. due to current spikes in current mode control
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- Engineering & Computer Science (AREA)
- Power Engineering (AREA)
- Inverter Devices (AREA)
Abstract
The invention discloses a single-stage boost inverter. By taking full advantages of a distributed inductor and a parasitic inductor, the distributed inductor, the parasitic inductor and an external capacitor form a passive network and are participated in the working condition of the single-stage boost inverter. According to the single-stage boost inverter with medium and high power, when the through vector state of the single-stage boost inverter is converted into a non-through state, distributed inductance and parasitic inductance exist in a direct current bus link, and then extremely high voltage spike can be generated on a direct current bus of the inverter, so that a power tube is easy to burn out. In order to improve the reliability of the inverter, a stage of suppression circuit is needed to be added. A stage of suppression circuit does not need to be specially added to the single-stage boost inverter disclosed by the invention, and the single-stage boost inverter is suitable for lower power levels and also suitable for higher power levels.
Description
Technical field
The present invention relates to inverter, particularly relate to a kind of single-stage boost inverter with suppression DC bus-bar voltage spike function.
Background technology
Single-stage boost inverter (Z-source inverter, accurate Z-source inverter) mode of operation has shoot-through zero vector state, effectively vector state, open circuit zero vector state three kinds of states.
Because DC bus link exists distributed inductance, stray inductance, when single-stage boost inverter be in pass-through state be converted to non-pass-through state time, DC bus-bar voltage has very high due to voltage spikes, very easily damages power device.
In order to absorb the due to voltage spikes on DC bus, one-level must be added and suppress circuit, as shown in Figure 1, in order to solve traditional RC, RCD, the DC bus-bar voltage that RCD amplitude limit type buffer circuit occurs in single-stage boost inverter is higher and loss is bigger than normal, and LCD buffer circuit can produce vibration in discharge process, and the volume of inductance is larger, the current stress that power tube bears is larger, at present, the absorbing circuit being directed to single-stage boost inverter have employed RCD absorbing circuit as shown in Figure 2, only have when boosting inverter is in non-pass-through state, switch just conducting, and now the switch of inverter bridge has conducting to become shutoff, produce due to voltage spikes by diode to Absorption Capacitance resonant charging, the energy ezpenditure that Absorption Capacitance absorbs is on resistance, electric capacity is stablized to steady state value.Like this, resistance only non-straight-through time consumed energy, but for the single-stage boost inverter of high-power high-current, this part loss is very large, so this absorbing circuit is suitable only for the single-stage boost inverter of middle low power.
For middle high-power inverter occasion, traditional inverter selects busbar to reduce DC bus distributed inductance usually, reduce DC bus-bar voltage spike, but busbar cost is higher.
Summary of the invention
Technical problem to be solved by this invention is operated in for accurate Z source boosting inverter in background technology the shortcoming that the serious and DC bus-bar voltage peak suppression method of big current condition Down Highway stray voltage exists, and proposes a kind of single-stage boost inverter.
The present invention is for solving the problems of the technologies described above by the following technical solutions:
A kind of single-stage boost inverter, comprises DC power supply, the first to the 3rd inductance, the first to the 3rd electric capacity and the first to the 3rd diode;
Described 3rd inductance is stray inductance, and the described first to the 3rd diode is fast recovery diode;
Described one end of first inductance is connected with the positive pole of DC power supply, and the other end is connected with one end of the second electric capacity, the anode of the second diode, the anode of the 3rd diode respectively;
The other end of described second electric capacity is connected with one end of the second inductance, one end of the 3rd inductance respectively;
The negative electrode of described 3rd diode is connected with the other end of the second inductance, the negative electrode of the first diode, one end of the first electric capacity respectively;
The other end of described 3rd inductance is connected with one end of the 3rd electric capacity, and the P as inverter holds;
The other end of described 3rd electric capacity is connected with the negative electrode of the second diode, the anode of the first diode respectively;
The other end of described first electric capacity is connected with the negative electrode of described DC power supply, and the N as inverter holds.
As the further prioritization scheme of a kind of single-stage boost inverter of the present invention, described 3rd electric capacity is noninductive electric capacity.
As the further prioritization scheme of a kind of single-stage boost inverter of the present invention, also comprise the 4th to the 5th inductance, the 4th to the 5th electric capacity and the first to the 6th power tube;
Described 4th to the 5th inductance is stray inductance;
The collector electrode of described first power tube to be connected with the second inductance by the 3rd inductance and to be connected with the negative electrode of the second diode by the 3rd electric capacity, and emitter is connected with the collector electrode of the second power tube;
The described emitter of the second power tube is connected with the negative pole of DC power supply;
The collector electrode of described 3rd power tube to be connected with the second inductance by the 4th inductance and to be connected with the negative electrode of the second diode by the 4th electric capacity, and emitter is connected with the collector electrode of the 4th power tube;
The emitter of described 4th power tube is connected with the negative pole of DC power supply;
The collector electrode of described 5th power tube to be connected with the second inductance by the 5th inductance and to be connected with the negative electrode of the second diode by the 5th electric capacity, and emitter is connected with the collector electrode of the 6th power tube;
The emitter of described 6th power tube is connected with the negative pole of DC power supply.
As the further prioritization scheme of a kind of single-stage boost inverter of the present invention, described 4th to the 5th electric capacity is noninductive electric capacity.
As the further prioritization scheme of a kind of single-stage boost inverter of the present invention, also comprise the 6th to the 8th inductance and the 6th to the 8th electric capacity;
Described 6th to the 8th inductance is stray inductance;
The emitter of described second power tube to be connected with the negative electrode of the first diode by the 6th electric capacity and to be connected with the negative pole of DC power supply by the 6th inductance;
The emitter of described 4th power tube to be connected with the negative electrode of the first diode by the 7th electric capacity and to be connected with the negative pole of DC power supply by the 7th inductance;
The emitter of described 6th power tube to be connected with the negative electrode of the first diode by the 8th electric capacity and to be connected with the negative pole of DC power supply by the 8th inductance.
As the further prioritization scheme of a kind of single-stage boost inverter of the present invention, described 6th to the 8th electric capacity is noninductive electric capacity.
As the further prioritization scheme of a kind of single-stage boost inverter of the present invention, described second inductance is coupling inductance.
As the further prioritization scheme of a kind of single-stage boost inverter of the present invention, transformer is adopted to replace described second inductance.
The present invention adopts above technical scheme compared with prior art, has following technique effect:
1. the present invention is passive snubber, and method is simple, and loss is little.
2. inverter of the present invention does not need busbar to reduce stray inductance, distributed inductance, only needs with the wire met the demands each
Brachium pontis couples together.No matter DC bus distributed inductance, stray inductance are much, all can not damage switching device, can
Higher by property.
3. volume is little, and cost is few.
Accompanying drawing explanation
Fig. 1 is LCD absorbing circuit;
Fig. 2 is RCD absorbing circuit;
Fig. 3 is the circuit diagram of first embodiment of the present invention;
Fig. 4 is distribution-free inductance, has the DC bus-bar voltage of distributed inductance and first embodiment of the invention to emulate comparison diagram;
Fig. 5 is the comparison analogous diagram of current several suppression DC bus-bar voltage spike method;
Fig. 6 is the circuit diagram of second embodiment of the present invention;
Fig. 7 is the emulation comparison diagram of second embodiment of the invention brachium pontis both end voltage;
Fig. 8 is the circuit diagram of the 3rd embodiment of the present invention;
Fig. 9 is the emulation comparison diagram of third embodiment of the invention brachium pontis both end voltage.
Embodiment
Below in conjunction with accompanying drawing, technical scheme of the present invention is described in further detail:
As shown in Figure 3, the invention discloses a kind of single-stage boost inverter, it comprises batteries, inductance L 1, inductance L 2, inductance L s3, electric capacity C1, electric capacity Cs3, electric capacity C2, diode VDs1, diode VDs2 and diode VD3, wherein, inductance L s3 is stray inductance, and described diode VDs1, diode VDs2 and diode VD3 are fast recovery diode; One end of inductance L 1 is connected with the positive pole of batteries, and the other end is connected with one end of electric capacity C2, the anode of diode VD3, the anode of diode VDs2 respectively; The other end of electric capacity C2 is connected with one end of inductance L 2, one end of inductance L s3 respectively; The negative electrode of diode VD3 is connected with the other end of inductance L 2, the negative electrode of diode VDs1, one end of electric capacity C1 respectively; The other end of inductance L s3 is connected with one end of electric capacity Cs3, and the P as inverter holds; The other end of electric capacity Cs3 is connected with the negative electrode of diode VDs2, the anode of diode VDs1 respectively; The other end of electric capacity C1 is connected with the negative electrode of described batteries, and the N as inverter holds.
Electric capacity Cs3 is discharged by electric capacity C2, diode VDs2, stray inductance Ls3.
Inductance L 2 can adopt general inductance, also can adopt coupling inductance, even can adopt transformer.
When inductance L 2 adopts general inductance, the distributed inductance of each brachium pontis of inverter bridge is less, such as IPM module, only considers the stray inductance of DC bus.Simulation parameter: input voltage is 350V, inductance L 1=L2=600 μ H, electric capacity C1=C2=200 μ F, electric capacity Cs3=40 μ F, load R=5 Ω, L=1mH, modulation ratio m=0.8, straight-through duty ratio D=0.2, DC bus stray inductance Ls3=3 μ H.
Fig. 4 be DC bus-bar voltage do not have stray inductance (on) analogous diagram (accurate Z-source inverter), have stray inductance (in) analogous diagram (accurate Z-source inverter), single-stage boost inverter analogous diagram proposed by the invention (under)
Fig. 5 is the DC bus-bar voltage analogous diagram without any absorbing circuit, RCD absorbing circuit, LCD absorbing circuit, single-stage boost inverter of the present invention, compared by upper figure below, can find out that the DC bus-bar voltage spike of single-stage boost inverter of the present invention obtains and suppress well.
As shown in Figure 6, the invention discloses the second single-stage boost inverter, the basis of the first single-stage boost inverter adds stray inductance Ls4, Ls5, electric capacity Cs4, Cs5; The collector electrode of power tube Q1 to be connected with inductance L 2 by inductance L s3 and to be connected with the negative electrode of diode VDs2 by electric capacity Cs3, and emitter is connected with the collector electrode of power tube Q2; The emitter of power tube Q2 is connected with the negative pole of batteries; The collector electrode of power tube Q3 to be connected with inductance L 2 by inductance L s4 and to be connected with the negative electrode of diode VDs2 by electric capacity Cs4, and emitter is connected with the collector electrode of power tube Q4; The emitter of power tube Q4 is connected with the negative pole of batteries; The collector electrode of power tube Q5 to be connected with inductance L 2 by inductance L s5 and to be connected with the negative electrode of diode VDs2 by electric capacity Cs5, and emitter is connected with the collector electrode of the 6th power tube; The emitter of power tube Q6 is connected with the negative pole of batteries.
Brachium pontis distributed inductance Ls3=80nH, Ls4=150nH, Ls5=250nH, electric capacity Cs3=1uF, Cs4=1.2uF, Cs5=1.5uF.
Fig. 7 is the emulation comparison diagram of the second single-stage boost inverter brachium pontis both end voltage, can find out, the DC bus-bar voltage spike of inverter of the present invention obtains very high suppression.
For considering that DC bus PN holds each brachium pontis distributed inductance, as shown in Figure 8, the invention discloses the third single-stage boost inverter, the basis of the second single-stage boost inverter adds stray inductance Ls6, Ls7, Ls8, and electric capacity Cs6, Cs7, Cs8; The emitter of power tube Q2 to be connected with the negative electrode of diode VDs1 by electric capacity Cs6 and to be connected with the negative pole of batteries by inductance L s6; The emitter of power tube Q4 to be connected with the negative electrode of diode VDs1 by electric capacity Cs7 and to be connected with the negative pole of batteries by inductance L s7; The emitter of power tube Q6 to be connected with the negative electrode of diode VDs1 by electric capacity Cs8 and to be connected with the negative pole of batteries by inductance L s8.
Electric capacity Cs6, Cs7, Cs8 are the Absorption Capacitance of lower pipe, and DC bus N holds (negative pole end) distributed inductance to be Ls6, Ls7, Ls8.
Fig. 9 gives the analogous diagram of the single-stage boost inverter shown in Fig. 8, and as can be seen from analogous diagram, the voltage at each brachium pontis two ends is the square wave of a constant amplitude, and the due to voltage spikes caused by distributed inductance, stray inductance obtains suppression.
Inverter of the present invention is stray inductance, distributed inductance and external capacitor composition passive network, add the operating characteristic of single-stage boost inverter, so just stray inductance, distributed inductance are fully utilized, do not need additional suppression circuit, do not need yet use busbar deliberately go reduce distributed inductance, stray inductance, just can reach suppression due to voltage spikes effect.
Claims (8)
1. a single-stage boost inverter, is characterized in that, comprises DC power supply, the first to the 3rd inductance, the first to the 3rd electric capacity and the first to the 3rd diode;
Described 3rd inductance is stray inductance, and the described first to the 3rd diode is fast recovery diode;
Described one end of first inductance is connected with the positive pole of DC power supply, and the other end is connected with one end of the second electric capacity, the anode of the second diode, the anode of the 3rd diode respectively;
The other end of described second electric capacity is connected with one end of the second inductance, one end of the 3rd inductance respectively;
The negative electrode of described 3rd diode is connected with the other end of the second inductance, the negative electrode of the first diode, one end of the first electric capacity respectively;
The other end of described 3rd inductance is connected with one end of the 3rd electric capacity, and the P as inverter holds;
The other end of described 3rd electric capacity is connected with the negative electrode of the second diode, the anode of the first diode respectively;
The other end of described first electric capacity is connected with the negative electrode of described DC power supply, and the N as inverter holds.
2. single-stage boost inverter according to claim 1, is characterized in that, described 3rd electric capacity is noninductive electric capacity.
3. single-stage boost inverter according to claim 1, is characterized in that, also comprises the 4th to the 5th inductance, the 4th to the 5th electric capacity and the first to the 6th power tube;
Described 4th to the 5th inductance is stray inductance;
The collector electrode of described first power tube to be connected with the second inductance by the 3rd inductance and to be connected with the negative electrode of the second diode by the 3rd electric capacity, and emitter is connected with the collector electrode of the second power tube;
The described emitter of the second power tube is connected with the negative pole of DC power supply;
The collector electrode of described 3rd power tube to be connected with the second inductance by the 4th inductance and to be connected with the negative electrode of the second diode by the 4th electric capacity, and emitter is connected with the collector electrode of the 4th power tube;
The emitter of described 4th power tube is connected with the negative pole of DC power supply;
The collector electrode of described 5th power tube to be connected with the second inductance by the 5th inductance and to be connected with the negative electrode of the second diode by the 5th electric capacity, and emitter is connected with the collector electrode of the 6th power tube;
The emitter of described 6th power tube is connected with the negative pole of DC power supply.
4. single-stage boost inverter according to claim 3, is characterized in that, described 4th to the 5th electric capacity is noninductive electric capacity.
5. single-stage boost inverter according to claim 3, is characterized in that, also comprises the 6th to the 8th inductance and the 6th to the 8th electric capacity;
Described 6th to the 8th inductance is stray inductance;
The emitter of described second power tube to be connected with the negative electrode of the first diode by the 6th electric capacity and to be connected with the negative pole of DC power supply by the 6th inductance;
The emitter of described 4th power tube to be connected with the negative electrode of the first diode by the 7th electric capacity and to be connected with the negative pole of DC power supply by the 7th inductance;
The emitter of described 6th power tube to be connected with the negative electrode of the first diode by the 8th electric capacity and to be connected with the negative pole of DC power supply by the 8th inductance.
6. single-stage boost inverter according to claim 5, is characterized in that, described 6th to the 8th electric capacity is noninductive electric capacity.
7. the single-stage boost inverter according to any one of claim 1 to claim 6, is characterized in that, described second inductance is coupling inductance.
8. the single-stage boost inverter according to any one of claim 1 to claim 6, is characterized in that, adopts transformer to replace described second inductance.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
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| CN201410785459.7A CN104578877B (en) | 2014-12-17 | 2014-12-17 | A kind of single-stage boost inverter |
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| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201410785459.7A CN104578877B (en) | 2014-12-17 | 2014-12-17 | A kind of single-stage boost inverter |
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| CN104578877A true CN104578877A (en) | 2015-04-29 |
| CN104578877B CN104578877B (en) | 2017-10-31 |
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Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
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| CN107222134A (en) * | 2017-06-20 | 2017-09-29 | 天津大学 | The brshless DC motor commutation torque ripple minimization method of noninductive Boost topology driving |
| CN107834886A (en) * | 2017-12-08 | 2018-03-23 | 安徽工业大学 | A kind of single-stage boost inverter and its control method |
| CN107960141A (en) * | 2015-08-20 | 2018-04-24 | 罗伯特·博世有限公司 | The method of the phase inverter circuit of line arrangement with for regenerating the electric oscillation that decays and for regenerating the electric oscillation that decays |
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| CN204442194U (en) * | 2014-12-17 | 2015-07-01 | 南京航空航天大学 | A kind of single-stage boost inverter |
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Cited By (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN107960141A (en) * | 2015-08-20 | 2018-04-24 | 罗伯特·博世有限公司 | The method of the phase inverter circuit of line arrangement with for regenerating the electric oscillation that decays and for regenerating the electric oscillation that decays |
| US10608555B2 (en) | 2015-08-20 | 2020-03-31 | Robert Bosch Gmbh | Inverter circuit comprising a circuit arrangement for regenerative damping of electrical oscillations, and method for regenerative damping of electrical oscillations |
| CN107960141B (en) * | 2015-08-20 | 2020-09-01 | 罗伯特·博世有限公司 | Inverter circuit with a circuit arrangement for regenerative damping of electrical oscillations and method for regenerative damping of electrical oscillations |
| CN107222134A (en) * | 2017-06-20 | 2017-09-29 | 天津大学 | The brshless DC motor commutation torque ripple minimization method of noninductive Boost topology driving |
| CN107222134B (en) * | 2017-06-20 | 2019-08-27 | 天津大学 | The brshless DC motor commutation torque ripple minimization method of noninductive Boost topology driving |
| CN107834886A (en) * | 2017-12-08 | 2018-03-23 | 安徽工业大学 | A kind of single-stage boost inverter and its control method |
| CN107834886B (en) * | 2017-12-08 | 2019-06-25 | 安徽工业大学 | A kind of single-stage boost inverter and its control method |
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| CN104578877B (en) | 2017-10-31 |
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