CN104578877B - A kind of single-stage boost inverter - Google Patents
A kind of single-stage boost inverter Download PDFInfo
- Publication number
- CN104578877B CN104578877B CN201410785459.7A CN201410785459A CN104578877B CN 104578877 B CN104578877 B CN 104578877B CN 201410785459 A CN201410785459 A CN 201410785459A CN 104578877 B CN104578877 B CN 104578877B
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- inductance
- electric capacity
- diode
- power tube
- inverter
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Classifications
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- H—ELECTRICITY
- H02—GENERATION; CONVERSION OR DISTRIBUTION OF ELECTRIC POWER
- H02M—APPARATUS FOR CONVERSION BETWEEN AC AND AC, BETWEEN AC AND DC, OR BETWEEN DC AND DC, AND FOR USE WITH MAINS OR SIMILAR POWER SUPPLY SYSTEMS; CONVERSION OF DC OR AC INPUT POWER INTO SURGE OUTPUT POWER; CONTROL OR REGULATION THEREOF
- H02M7/00—Conversion of ac power input into dc power output; Conversion of dc power input into ac power output
- H02M7/42—Conversion of dc power input into ac power output without possibility of reversal
- H02M7/44—Conversion of dc power input into ac power output without possibility of reversal by static converters
- H02M7/48—Conversion of dc power input into ac power output without possibility of reversal by static converters using discharge tubes with control electrode or semiconductor devices with control electrode
- H02M7/53—Conversion of dc power input into ac power output without possibility of reversal by static converters using discharge tubes with control electrode or semiconductor devices with control electrode using devices of a triode or transistor type requiring continuous application of a control signal
- H02M7/537—Conversion of dc power input into ac power output without possibility of reversal by static converters using discharge tubes with control electrode or semiconductor devices with control electrode using devices of a triode or transistor type requiring continuous application of a control signal using semiconductor devices only, e.g. single switched pulse inverters
- H02M7/5387—Conversion of dc power input into ac power output without possibility of reversal by static converters using discharge tubes with control electrode or semiconductor devices with control electrode using devices of a triode or transistor type requiring continuous application of a control signal using semiconductor devices only, e.g. single switched pulse inverters in a bridge configuration
-
- H—ELECTRICITY
- H02—GENERATION; CONVERSION OR DISTRIBUTION OF ELECTRIC POWER
- H02M—APPARATUS FOR CONVERSION BETWEEN AC AND AC, BETWEEN AC AND DC, OR BETWEEN DC AND DC, AND FOR USE WITH MAINS OR SIMILAR POWER SUPPLY SYSTEMS; CONVERSION OF DC OR AC INPUT POWER INTO SURGE OUTPUT POWER; CONTROL OR REGULATION THEREOF
- H02M1/00—Details of apparatus for conversion
- H02M1/32—Means for protecting converters other than automatic disconnection
-
- H—ELECTRICITY
- H02—GENERATION; CONVERSION OR DISTRIBUTION OF ELECTRIC POWER
- H02M—APPARATUS FOR CONVERSION BETWEEN AC AND AC, BETWEEN AC AND DC, OR BETWEEN DC AND DC, AND FOR USE WITH MAINS OR SIMILAR POWER SUPPLY SYSTEMS; CONVERSION OF DC OR AC INPUT POWER INTO SURGE OUTPUT POWER; CONTROL OR REGULATION THEREOF
- H02M1/00—Details of apparatus for conversion
- H02M1/0003—Details of control, feedback or regulation circuits
- H02M1/0038—Circuits or arrangements for suppressing, e.g. by masking incorrect turn-on or turn-off signals, e.g. due to current spikes in current mode control
Abstract
The invention discloses a kind of single-stage boost inverter, distributed inductance, stray inductance are fully utilized, and external electric capacity constitutes a passive network, participates in single-stage boost inverter working condition.In powerful single-stage boost inverter when being converted to non-pass-through state because single-stage boost inverter is in straight-through vector state, there is distributed inductance, stray inductance in dc bus link, then very high due to voltage spikes can be produced on inverter dc bus, easily burns out power tube.In order to improve the reliability of inverter, it is necessary to plus one-level suppression circuit.The single-stage boost inverter of the present invention need not specially add one-level suppression circuit, be not only suitable for less power grade, be applied to larger power grade again.
Description
Technical field
The present invention relates to inverter, more particularly to a kind of single-stage boosting with suppression DC bus-bar voltage spike function are inverse
Become device.
Background technology
Single-stage boost inverter (Z-source inverter, quasi- Z-source inverter) mode of operation has shoot-through zero vector state, effectively arrow
Amount state, open circuit three kinds of states of zero vector state.
Because dc bus link has distributed inductance, stray inductance, turn when single-stage boost inverter is in pass-through state
When being changed to non-pass-through state, DC bus-bar voltage has very high due to voltage spikes, easily damages power device.
In order to absorb the due to voltage spikes on dc bus, it is necessary to plus one-level suppression circuit, as shown in figure 1, in order to solve to pass
The DC bus-bar voltage that RC, RCD, RCD amplitude limit type buffer circuit of system occur in single-stage boost inverter is higher and is lost
It is bigger than normal, and LCD buffer circuits can produce vibration in discharge process, and also the volume of inductance is larger, the electricity that power tube is born
Stream stress is larger, and at present, the absorbing circuit for being directed to single-stage boost inverter employs RCD absorbing circuits as shown in Figure 2, only
Have when boosting inverter is in non-pass-through state, switch is just turned on, and now the switch of inverter bridge has conducting to be changed into shut-off, production
Raw due to voltage spikes gives Absorption Capacitance resonant charging by diode, and the energy expenditure that Absorption Capacitance absorbs makes electricity on resistance
Hold stable to steady state value.So, the resistance only consumed energy when non-straight-through, but the single-stage boosting for high-power high-current is inverse
Become for device, this partition losses is very big, so this absorbing circuit is suitable only for the single-stage boost inverter of middle low power.
For middle high-power inverter occasion, traditional inverter reduces dc bus distribution electricity generally from busbar
Sense, reduces DC bus-bar voltage spike, but busbar cost is higher.
The content of the invention
The technical problems to be solved by the invention are to be directed to quasi- Z sources boosting inverter in background technology to be operated in high current bar
A kind of shortcoming that part Down Highway stray voltage is serious and DC bus-bar voltage peak suppression method is present, it is proposed that single-stage liter
Press inverter.
The present invention uses following technical scheme to solve above-mentioned technical problem:
A kind of single-stage boost inverter, including dc source, the first to the 3rd inductance, the first to the 3rd electric capacity, Yi Ji
One to the 3rd diode；
3rd inductance is stray inductance, and the described first to the 3rd diode is fast recovery diode；
One end of first inductance is connected with the positive pole of dc source, other end one end respectively with the second electric capacity,
The anode of two diodes, the anode of the 3rd diode are connected；
One end, the one end of the 3rd inductance of the other end of second electric capacity respectively with the second inductance are connected；
The other end, the negative electrode of the first diode, the first electric capacity of the negative electrode of 3rd diode respectively with the second inductance
One end be connected；
The other end of 3rd inductance is connected with one end of the 3rd electric capacity, is used as the P ends of inverter；
Negative electrode, the anode of the first diode of the other end of 3rd electric capacity respectively with the second diode are connected；
The other end of first electric capacity is connected with the negative electrode of the dc source, is used as the N-terminal of inverter.
As a kind of further prioritization scheme of single-stage boost inverter of the invention, the 3rd electric capacity is noninductive electric capacity.
As a kind of further prioritization scheme of single-stage boost inverter of the invention, also comprising the 4th to the 5th inductance,
Four to the 5th electric capacity and the first to the 6th power tube；
4th to the 5th inductance is stray inductance；
The colelctor electrode of first power tube is connected by the 3rd inductance with the second inductance and by the 3rd electric capacity and second
The negative electrode of diode is connected, and emitter stage is connected with the colelctor electrode of the second power tube；
The emitter stage of second power tube is connected with the negative pole of dc source；
The colelctor electrode of 3rd power tube is connected by the 4th inductance with the second inductance and by the 4th electric capacity and second
The negative electrode of diode is connected, and emitter stage is connected with the colelctor electrode of the 4th power tube；
The emitter stage of 4th power tube is connected with the negative pole of dc source；
The colelctor electrode of 5th power tube is connected by the 5th inductance with the second inductance and by the 5th electric capacity and second
The negative electrode of diode is connected, and emitter stage is connected with the colelctor electrode of the 6th power tube；
The emitter stage of 6th power tube is connected with the negative pole of dc source.
As a kind of further prioritization scheme of single-stage boost inverter of the invention, the 4th to the 5th electric capacity is noninductive
Electric capacity.
As a kind of further prioritization scheme of single-stage boost inverter of the invention, also comprising the 6th to the 8th inductance, with
And the 6th to the 8th electric capacity；
6th to the 8th inductance is stray inductance；
The emitter stage of second power tube is connected by the 6th electric capacity with the negative electrode of the first diode and by the 6th electricity
Sense is connected with the negative pole of dc source；
The emitter stage of 4th power tube is connected by the 7th electric capacity with the negative electrode of the first diode and by the 7th electricity
Sense is connected with the negative pole of dc source；
The emitter stage of 6th power tube is connected by the 8th electric capacity with the negative electrode of the first diode and by the 8th electricity
Sense is connected with the negative pole of dc source.
As a kind of further prioritization scheme of single-stage boost inverter of the invention, the 6th to the 8th electric capacity is noninductive
Electric capacity.
As a kind of further prioritization scheme of single-stage boost inverter of the invention, second inductance is coupling inductance.
As a kind of further prioritization scheme of single-stage boost inverter of the invention, second electricity is replaced using transformer
Sense.
The present invention uses above technical scheme compared with prior art, with following technique effect：
1. the present invention is passive snubber, method is simple, is lost small.
2. the inverter of the present invention does not need busbar to reduce stray inductance, distributed inductance, it is only necessary to leading that satisfaction is required
Bundle of lines is each
Bridge arm is connected.No matter dc bus distributed inductance, stray inductance are much, all without damage derailing switch
Part, can
It is higher by property.
3. small volume, cost is few.
Brief description of the drawings
Fig. 1 is LCD absorbing circuits；
Fig. 2 is RCD absorbing circuits；
Fig. 3 is the circuit diagram of one embodiment of the present invention；
Fig. 4 is distribution-free inductance, is distributed inductance and the DC bus-bar voltage of first embodiment of the invention emulation ratio
Relatively scheme；
Fig. 5 is the comparison analogous diagrams for suppressing DC bus-bar voltage spike method several at present；
Fig. 6 is the circuit diagram of second embodiment of the present invention；
Fig. 7 is that figure is compared in the emulation of second embodiment of the invention bridge arm both end voltage；
Fig. 8 is the circuit diagram of the 3rd embodiment of the present invention；
Fig. 9 is that figure is compared in the emulation of third embodiment of the invention bridge arm both end voltage.
Embodiment
Technical scheme is described in further detail below in conjunction with the accompanying drawings：
As shown in figure 3, the invention discloses a kind of single-stage boost inverter, it includes batteries, inductance L1, inductance
L2, inductance Ls3, electric capacity C1, electric capacity Cs3, electric capacity C2, diode VDs1, diode VDs2 and diode VD3, wherein, inductance
Ls3 is stray inductance, and the diode VDs1, diode VDs2 and diode VD3 are fast recovery diode；The one of inductance L1
End is connected with the positive pole of batteries, other end one end respectively with electric capacity C2, diode VD3 anode, diode VDs2
Anode is connected；One end, the inductance Ls3 one end of the electric capacity C2 other end respectively with inductance L2 are connected；Diode VD3 negative electrode point
The other end, diode VDs1 negative electrode not with inductance L2, electric capacity C1 one end are connected；The inductance Ls3 other end and electric capacity Cs3
One end be connected, be used as the P ends of inverter；Electric capacity Cs3 other end negative electrode respectively with diode VDs2, diode VDs1
Anode is connected；The electric capacity C1 other end is connected with the negative electrode of the batteries, is used as the N-terminal of inverter.
Electric capacity Cs3 is discharged by electric capacity C2, diode VDs2, stray inductance Ls3.
Inductance L2 can use general inductance, it would however also be possible to employ coupling inductance, it might even be possible to use transformer.
When inductance L2 uses general inductance, the distributed inductance of each bridge arm of inverter bridge is smaller, such as IPM modules, only examines
Consider the stray inductance of dc bus.Simulation parameter：Input voltage is 350V, inductance L1=L2=600 μ H, electric capacity C1=C2=
200 μ F, electric capacity Cs3=40 μ F, load R=5 Ω, L=1mH, modulation ratio m=0.8, lead directly to dutycycle D=0.2, dc bus
Stray inductance Ls3=3 μ H.
Fig. 4 be DC bus-bar voltage do not have stray inductance (on) analogous diagram (quasi- Z-source inverter), have stray inductance (in) it is imitative
True figure (quasi- Z-source inverter), single-stage boost inverter analogous diagram proposed by the invention (under),
Fig. 5 is without any absorbing circuit, RCD absorbing circuits, LCD absorbing circuits, the single-stage boost inverter of the present invention
DC bus-bar voltage analogous diagram, is compared by upper figure below, it can be seen that the dc bus electricity of single-stage boost inverter of the invention
Pointing peak has obtained suppressing well.
As shown in fig. 6, the invention discloses second of single-stage boost inverter, in the base of the first single-stage boost inverter
Stray inductance Ls4, Ls5, electric capacity Cs4, Cs5 are added on plinth；Power tube Q1 colelctor electrode passes through inductance Ls3 and inductance L2 phases
It is connected even and with diode VDs2 negative electrode by electric capacity Cs3, emitter stage is connected with power tube Q2 colelctor electrode；Power tube Q2
Emitter stage be connected with the negative pole of batteries；Power tube Q3 colelctor electrode is connected by inductance Ls4 with inductance L2 and by electricity
Hold Cs4 with diode VDs2 negative electrode to be connected, emitter stage is connected with power tube Q4 colelctor electrode；Power tube Q4 emitter stage and storage
The negative pole of battery pack is connected；Power tube Q5 colelctor electrode is connected by inductance Ls5 with inductance L2 and by electric capacity Cs5 and two poles
Pipe VDs2 negative electrode is connected, and emitter stage is connected with the colelctor electrode of the 6th power tube；Power tube Q6 emitter stage and batteries
Negative pole is connected.
Bridge arm distributed inductance Ls3=80nH, Ls4=150nH, Ls5=250nH, electric capacity Cs3=1uF, Cs4=1.2uF,
Cs5=1.5uF.
Fig. 7 compares figure for the emulation of second of single-stage boost inverter bridge arm both end voltage, it can be seen that inversion of the present invention
The DC bus-bar voltage spike of device has obtained very high suppression.
To consider each bridge arm distributed inductance of dc bus PN ends, as shown in figure 8, the invention discloses the third single-stage liter
Inverter is pressed, stray inductance Ls6, Ls7, Ls8 is added on the basis of second of single-stage boost inverter, and electric capacity Cs6,
Cs7、Cs8；Power tube Q2 emitter stage is connected by electric capacity Cs6 with diode VDs1 negative electrode and by inductance Ls6 and electric power storage
The negative pole of pond group is connected；Power tube Q4 emitter stage is connected by electric capacity Cs7 with diode VDs1 negative electrode and by inductance
Ls7 is connected with the negative pole of batteries；Power tube Q6 emitter stage be connected by electric capacity Cs8 with diode VDs1 negative electrode and
It is connected by inductance Ls8 with the negative pole of batteries.
Electric capacity Cs6, Cs7, Cs8 are the Absorption Capacitance of down tube, and dc bus N-terminal (negative pole end) distributed inductance is Ls6, Ls7,
Ls8。
Fig. 9 gives the single-stage boost inverter analogous diagram shown in Fig. 8, from analogous diagram as can be seen that each bridge arm two ends
Voltage be a constant amplitude square wave, the due to voltage spikes caused by distributed inductance, stray inductance suppressed.
Stray inductance, distributed inductance and external capacitor are constituted passive network by inverter of the present invention, along with single-stage is boosted
The working characteristics of inverter, thus fully utilizes stray inductance, distributed inductance, it is not necessary to additional suppression circuit,
Need not use busbar deliberately go reduce distributed inductance, stray inductance, with regard to can reach suppress due to voltage spikes effect.
Claims (6)
1. a kind of single-stage boost inverter, it is characterised in that including dc source, the first to the 5th inductance, the first to the 5th electricity
Appearance, the first to the 3rd diode and the first to the 6th power tube；
3rd inductance is stray inductance, and the described first to the 3rd diode is fast recovery diode；
One end of first inductance is connected with the positive pole of dc source, other end one end respectively with the second electric capacity, the two or two
The anode of pole pipe, the anode of the 3rd diode are connected；
One end, the one end of the 3rd inductance of the other end of second electric capacity respectively with the second inductance are connected；
The negative electrode of 3rd diode other end respectively with the second inductance, the negative electrode of the first diode, the one of the first electric capacity
End is connected；
The other end of 3rd inductance is connected with one end of the 3rd electric capacity, is used as the P ends of inverter；
Negative electrode, the anode of the first diode of the other end of 3rd electric capacity respectively with the second diode are connected；
The other end of first electric capacity is connected with the negative electrode of the dc source, is used as the N-terminal of inverter；
4th to the 5th inductance is stray inductance；
The colelctor electrode of first power tube is connected by the 3rd inductance with the second inductance and by the 3rd electric capacity and the two or two pole
The negative electrode of pipe is connected, and emitter stage is connected with the colelctor electrode of the second power tube；
The emitter stage of second power tube is connected with the negative pole of dc source；
The colelctor electrode of 3rd power tube is connected by the 4th inductance with the second inductance and by the 4th electric capacity and the two or two pole
The negative electrode of pipe is connected, and emitter stage is connected with the colelctor electrode of the 4th power tube；
The emitter stage of 4th power tube is connected with the negative pole of dc source；
The colelctor electrode of 5th power tube is connected by the 5th inductance with the second inductance and by the 5th electric capacity and the two or two pole
The negative electrode of pipe is connected, and emitter stage is connected with the colelctor electrode of the 6th power tube；
The emitter stage of 6th power tube is connected with the negative pole of dc source.
2. single-stage boost inverter according to claim 1, it is characterised in that the 3rd electric capacity is noninductive electric capacity.
3. single-stage boost inverter according to claim 1, it is characterised in that the 4th to the 5th electric capacity is without electrification
Hold.
4. single-stage boost inverter according to claim 1, it is characterised in that also comprising the 6th to the 8th inductance and
6th to the 8th electric capacity；
6th to the 8th inductance is stray inductance；
The emitter stage of second power tube be connected by the 6th electric capacity with the negative electrode of the first diode and by the 6th inductance with
The negative pole of dc source is connected；
The emitter stage of 4th power tube be connected by the 7th electric capacity with the negative electrode of the first diode and by the 7th inductance with
The negative pole of dc source is connected；
The emitter stage of 6th power tube be connected by the 8th electric capacity with the negative electrode of the first diode and by the 8th inductance with
The negative pole of dc source is connected.
5. single-stage boost inverter according to claim 4, it is characterised in that the 6th to the 8th electric capacity is without electrification
Hold.
6. the single-stage boost inverter according to any one of claim 1 to claim 5, it is characterised in that described
Two inductance are coupling inductance.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
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| CN201410785459.7A CN104578877B (en) | 2014-12-17 | 2014-12-17 | A kind of single-stage boost inverter |
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| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201410785459.7A CN104578877B (en) | 2014-12-17 | 2014-12-17 | A kind of single-stage boost inverter |
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| CN104578877A CN104578877A (en) | 2015-04-29 |
| CN104578877B true CN104578877B (en) | 2017-10-31 |
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Families Citing this family (3)
| Publication number | Priority date | Publication date | Assignee | Title |
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| DE102015215886A1 (en) * | 2015-08-20 | 2017-02-23 | Robert Bosch Gmbh | Inverter circuit comprising a circuit arrangement for the regenerative damping of electrical oscillations and method for the regenerative damping of electrical oscillations |
| CN107222134B (en) * | 2017-06-20 | 2019-08-27 | 天津大学 | The brshless DC motor commutation torque ripple minimization method of noninductive Boost topology driving |
| CN107834886B (en) * | 2017-12-08 | 2019-06-25 | 安徽工业大学 | A kind of single-stage boost inverter and its control method |
Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN103457496A (en) * | 2013-08-15 | 2013-12-18 | 南京航空航天大学 | Single-stage booster inverter |
| CN204442194U (en) * | 2014-12-17 | 2015-07-01 | 南京航空航天大学 | A kind of single-stage boost inverter |
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2014
- 2014-12-17 CN CN201410785459.7A patent/CN104578877B/en active Active
Patent Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN103457496A (en) * | 2013-08-15 | 2013-12-18 | 南京航空航天大学 | Single-stage booster inverter |
| CN204442194U (en) * | 2014-12-17 | 2015-07-01 | 南京航空航天大学 | A kind of single-stage boost inverter |
Non-Patent Citations (2)
| Title |
|---|
| Four Quasi-Z-Source Inverters;J. Anderson等;《Proc.IEEE Power Electron. Spec. Conf》;20081231;第2743-2749页 * |
| 新型单级可升压逆变器;杨奇等;《电工技术学报》;20110430;第26卷(第4期);第122-127页 * |
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