CN201869117U

CN201869117U - Efficient isolation inverter circuit

Info

Publication number: CN201869117U
Application number: CN2010205076837U
Authority: CN
Inventors: 胡裕凯
Original assignee: CHENGDU INTEGRID ELECTRICAL Co Ltd
Current assignee: CHENGDU INTEGRID ELECTRICAL Co Ltd
Priority date: 2010-08-27
Filing date: 2010-08-27
Publication date: 2011-06-15
Anticipated expiration: 2020-08-27

Abstract

The utility model relates to an inverter circuit, in particular to an efficient isolation inverter circuit, which comprises an HF (High Frequency) resonance circuit and a T-shaped three-level inverting circuit, wherein an input circuit is in safe connection with the HF resonance circuit; the rear end of the HF resonance circuit is connected with the T-shaped three-level inverting circuit at the back level via a diode and a capacitor; and four groups of complete control device switches are arranged in the T-shaped three-level inverting circuit. By adopting the efficient isolation inverter circuit provided by the utility model, the switch loss is reduced, the parameter of a filter is simultaneously decreased, the efficiency of the back level is upgraded, and the volume is reduced.

Description

Efficient isolated inverter circuit

Technical field

The utility model relates to a kind of inverter circuit, is specially efficient isolated inverter circuit.

Background technology

Inverter is normally with the device of dc inversion for interchange output, i.e. DC/AC conversion.It is widely used in capital equipment is the direct current supply mode, but small part is the occasion of Alternating Current Power Supply.The widely used inverter principle of existing market is: the direct current input, after high-frequency isolation, obtain a direct voltage, and then by the half-bridge inversion circuit inversion, obtain stable interchange output after the filtering.This circuit is simple, because the DC/DC isolation level adopts hard switching, inverter bridge adopts two level inverse conversions, and efficient is not high, and volume is bigger.

Summary of the invention

The utility model provides a kind of efficient isolated inverter circuit just at above technical problem, and purpose is: reduced switching losses, promoted the efficient of back level, reduced volume.

Concrete technical scheme of the present utility model is as follows:

Efficient isolated inverter circuit, form by high-frequency circuit and T type tri-level inversion circuit, the input circuit insurance connects high-frequency circuit, the T type tri-level inversion circuit of level had four groups to control devices switch entirely in the T type tri-level inversion circuit after the high-frequency circuit rear end connected by diode, electric capacity.

Full control devices switch in described high-frequency circuit, the T type tri-level inversion circuit is MosFET pipe or IGBT switching device.

MOSFET is the abbreviation of English MetalOxide Semicoductor Field Effect Transistor, and being translated into Chinese is " metal oxide semiconductor field effect tube ".It is the device of being made by metal, oxide (SiO2 or SiN) and three kinds of materials of semiconductor.So-called power MOSFET (Power MOSFET) is meant that it can export bigger operating current (several peace to tens peaces), is used for the device of power output stage.

IGBT (Insulated Gate Bipolar Transistor), insulated gate polar form power tube, the compound full-control type voltage driven type power electronic device of forming by BJT (double pole triode) and MOS (insulating gate type field effect tube).Be applied to fields such as alternating current machine, frequency converter, Switching Power Supply, lighting circuit, traction transmission.IGBT is heavy current, high-voltage applications and fast terminal equipment evolving naturally with vertical power mosfet.Need a source to leak passage owing to realize a higher puncture voltage BVDSS, and this passage has very high resistivity, thereby causing power MOSFET to have the high feature of RDS (on) numerical value, IGBT has eliminated these major defects of existing power MOSFET.Though the latest generation power MOSFET device has improved RDS (on) characteristic significantly, when high level, the power conduction loss still exceeds much than IGBT technology.Lower pressure drop converts the ability of a low VCE (sat) to, and the structure of IGBT, and same standard bipolar device is compared, and can support more high current density, and simplifies the schematic diagram of IGBT driver.

Operation principle of the present utility model is as follows: the direct current input provides input through insurance to high-frequency circuit, devices switch and transformer have formed high-frequency circuit, high-frequency circuit resonance isolated variable, behind diode and electric capacity rectifying and wave-filtering, obtain two voltages, through the T type tri-level inversion that devices switch forms, filtering and output then obtains stable interchange output.Owing to isolate the high efficiency conversion characteristics of utilization LLC, the tri-level inversion that adds the back level is than two common level efficient height, and the inversion harmonic wave of three level is little, can adopt the filter of little filtering parameter, has formed the high efficiency circuit of two-stage isolated variable.

The utility model utilizes level behind the isolated variable prime of LLC and the tri-level inversion, has formed high efficiency isolated inverter circuit.Because the LLC circuit has the conversion frequency height, soft switch work, secondary does not need filter inductance, and diode is zero current work, makes that the prime volume is little, the efficient height.The tri-level inversion of back level has not only reduced switching losses, has also reduced filter parameter simultaneously; Promote the efficient of back level, reduced volume.

Description of drawings

Fig. 1 is a structural representation of the present utility model

Wherein, 1---------diode, 4---electric capacity, 5---is controlled devices switch to T type tri-level inversion circuit, 3 to high-frequency circuit, 2 entirely.

Embodiment

The utility model is described in further detail below in conjunction with embodiment and Figure of description.

[0014] embodiment: efficient isolated inverter circuit, form by high-frequency circuit and T type tri-level inversion circuit, the input circuit insurance connects high-frequency circuit, the T type tri-level inversion circuit of level had four groups to control devices switch entirely in the T type tri-level inversion circuit after the high-frequency circuit rear end connected by diode, electric capacity.Full control devices switch in described high-frequency circuit, the T type tri-level inversion circuit is the MosFET pipe.The direct current input provides input through insurance to high-frequency circuit, and high-frequency resonant isolated variable circuit obtains two voltages after diode rectification filtering, through T type tri-level inversion, then through filtering output, obtains stable interchange output.Since the DC/DC isolation level, the high efficiency conversion characteristics of utilization LLC, the tri-level inversion that adds the back level is than two common level efficient height, and the inversion harmonic wave of three level is little, can adopt the filter of little filtering parameter, has formed the high efficiency circuit of two-stage isolated variable.

Claims

1. efficient isolated inverter circuit, form by high-frequency circuit and T type tri-level inversion circuit, it is characterized in that: the input circuit insurance connects high-frequency circuit, the T type tri-level inversion circuit of level had four groups to control devices switch entirely in the T type tri-level inversion circuit after the high-frequency circuit rear end connected by diode, electric capacity.

2. efficient isolated inverter circuit according to claim 1 is characterized in that: the full control devices switch in described high-frequency circuit, the T type tri-level inversion circuit is MosFET pipe or IGBT switching device.