CN204497227U - 高压大功率逆变器模块 - Google Patents

高压大功率逆变器模块 Download PDF

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CN204497227U
CN204497227U CN201520269965.0U CN201520269965U CN204497227U CN 204497227 U CN204497227 U CN 204497227U CN 201520269965 U CN201520269965 U CN 201520269965U CN 204497227 U CN204497227 U CN 204497227U
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power mos
welded
outer lead
metal oxide
oxide semiconductor
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白会荣
李阳
冯洺予
张元元
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Jinzhou Liaojing Electronic Technology Co ltd
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LIAONING LIAOJING ELECTRONIC TECHNOLOGY Co Ltd
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/4805—Shape
    • H01L2224/4809—Loop shape
    • H01L2224/48091—Arched
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/49—Structure, shape, material or disposition of the wire connectors after the connecting process of a plurality of wire connectors
    • H01L2224/491—Disposition
    • H01L2224/4911—Disposition the connectors being bonded to at least one common bonding area, e.g. daisy chain
    • H01L2224/49111—Disposition the connectors being bonded to at least one common bonding area, e.g. daisy chain the connectors connecting two common bonding areas, e.g. Litz or braid wires

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Abstract

一种高压大功率逆变器模块，包括构成逆变器电路的六个内设续流二极管的功率MOS芯片，其特殊之处是：所述六个功率MOS芯片集成在一个由底板和边框经一体化封装构成的金属管壳内，在边框上设置外引线，在底板上焊接有金属化陶瓷基板，在金属化陶瓷基板上通过高温合金焊料焊接有钼片和铜柱，所述铜柱与外引线位于管壳内部位，所述六个内设续流二极管的功率MOS芯片烧结焊接在钼片上，各个功率MOS器件之间采用硅铝丝互连，功率MOS器件的输入输出端通过硅铝丝连接至外引线。有益效果是：内部结构紧凑，占用空间极小，特别是将功率MOS器件烧结焊接在钼片上，可实现低的空洞率，降低了芯片到管壳的热阻，提高了可靠性。

Description

高压大功率逆变器模块
技术领域
本实用新型涉及一种半导体混合集成电路器件，尤其涉及一种高压大功率逆变器模块。
背景技术
由于大部分逆变器功率较小，工作电压低，输出功率小，并且采用塑封工艺。因而，无法直接应用于某些工作电压较高、负载功率较大的环境，因此需要通过多个半导体分立功率器件组合使用来实现。通过半导体分立功率器件组合虽然可以实现高压大功率应用，但是占用空间大，重量重，组装繁琐。尤其是在空间要求小，重量要求轻，可靠性要求高的条件下，用多个半导体分立器件实现逆变器电路具有一定困难。
实用新型内容
本实用新型要解决的技术问题是提供一种可实现金属模块化封装、内部结构紧凑、占用空间极小、可降低芯片到管壳的热阻、可靠性高的高电压大功率逆变器模块。
本实用新型涉及的高压大功率逆变器模块，包括构成逆变器电路的六个内设续流二极管的功率MOS芯片，其特殊之处是：所述六个功率MOS芯片集成在一个由底板和边框经一体化封装构成的金属管壳内，在边框上设置外引线，在底板上焊接有金属化陶瓷基板，在金属化陶瓷基板上通过高温合金焊料焊接有钼片和铜柱，所述铜柱与外引线位于管壳内部位连接，所述六个内设续 流二极管的功率MOS芯片烧结焊接在钼片上，各个功率MOS器件之间采用硅铝丝互连，功率MOS器件的输入输出端通过硅铝丝连接至外引线。
本实用新型的有益效果是：将构成逆变器电路的六个内设续流二极管的功率MOS芯片集成在一体化封装的金属管壳内，内部结构紧凑，占用空间极小，特别是将功率MOS器件烧结焊接在钼片上，可实现低的空洞率，降低了芯片到管壳的热阻，提高了可靠性。
附图说明
图1是本实用新型的结构示意图。
图2是本实用新型的内部示意图。
图3是本实用新型的逻辑示意图。
图中：1－金属化陶瓷基片，2－钼片，3－硅铝丝，4－功率MOS芯片，5－外引线，6－铜柱6，7－底板，8－边框，9－绝缘子。
具体实施方式
如图所示，本实用新型包括由底板7和边框8经一体化封装构成的金属管壳，所述底板7为矩形，在边框8上设置外引线5且其间通过绝缘子9绝缘，在底板7上通过高温合金焊料焊接有金属化陶瓷基板1，在金属化陶瓷基板1上通过高温合金焊料焊接有钼片2和铜柱6，本实施例中所述高温合金焊片为Pb92.5Sn5Ag2.5焊料，所述铜柱6与外引线5位于金属管壳内部位连接，在金属管壳内位于钼片2上通过焊料烧结焊接六个内设续流二极管的功率MOS芯片4，各个功率MOS器件4之间采用硅铝丝3互连，功率MOS器件4的输入输出端G1～G6、S1～S6和L1～L3、L+、L-通过硅铝丝3连接至外引线5，最后在氮气氛 围内进行封装。
以上仅为本实用新型的具体实施例而已，并不用于限制本实用新型，对于本领域的技术人员来说，本实用新型可以有各种更改和变化。凡在本实用新型的精神和原则之内，所作的任何修改、等同替换、改进等，均应包含在本实用新型的保护范围之内。

Claims (1)

1.一种高压大功率逆变器模块，包括构成逆变器电路的六个内设续流二极管的功率MOS芯片，其特征是：所述六个功率MOS芯片集成在一个由底板和边框经一体化封装构成的金属管壳内，在边框上设置外引线，在底板上焊接有金属化陶瓷基板，在金属化陶瓷基板上通过高温合金焊料焊接有钼片和铜柱，所述铜柱与外引线位于管壳内部位连接，所述六个内设续流二极管的功率MOS芯片烧结焊接在钼片上，各个功率MOS器件之间采用硅铝丝互连，功率MOS器件的输入输出端通过硅铝丝连接至外引线。
CN201520269965.0U 2015-04-27 2015-04-27 高压大功率逆变器模块 Active CN204497227U (zh)

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Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN107634044A (zh) * 2017-09-15 2018-01-26 成都睿腾万通科技有限公司 一种大功率sip金锡焊接封装结构及封装方法

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN107634044A (zh) * 2017-09-15 2018-01-26 成都睿腾万通科技有限公司 一种大功率sip金锡焊接封装结构及封装方法

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