CN204441292U - Indium nitride channel layer gallium nitride based transistor structure with high electron mobility - Google Patents
Indium nitride channel layer gallium nitride based transistor structure with high electron mobility Download PDFInfo
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- CN204441292U CN204441292U CN201520005486.8U CN201520005486U CN204441292U CN 204441292 U CN204441292 U CN 204441292U CN 201520005486 U CN201520005486 U CN 201520005486U CN 204441292 U CN204441292 U CN 204441292U
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Abstract
The utility model discloses a kind of indium nitride channel layer gallium nitride based transistor structure with high electron mobility, comprising: a substrate; One nucleating layer, this nucleating layer makes over the substrate, and the thickness of this nucleating layer is 0.01-0.60 μm; One resilient coating, this resilient coating is produced on above described nucleating layer; One indium nitride channel layer, this indium nitride channel layer is produced on above described resilient coating, and thickness is 0.6-5nm; One aln inserting layer, this aln inserting layer is produced on above described indium nitride channel layer, and thickness is 0.7-5nm; One barrier layer, this barrier layer is produced on above described aln inserting layer; One gallium nitride cap layers, this gallium nitride cap layers is produced on above described barrier layer, and thickness is 1-5nm.By introducing indium nitride channel layer, forming the back of the body potential barrier of restriction channel electrons, improving two-dimensional electron gas limitation capability, improve grid ability of regulation and control, reduce resilient coating electric leakage, the short-channel effect of suppression device.
Description
Technical field
The utility model relates to technical field of semiconductors, particularly relate to a kind of indium nitride channel layer gallium nitride radical heterojunction high electron mobility transistor structure, this transistor uses indium nitride as channel layer, and adopt aluminum gallium nitride as resistive formation, the limitation capability to two-dimensional electron gas can be significantly improved, the electric leakage of containment resilient coating, improves the reliability of devices function.
Background technology
Gallium nitride is as the Typical Representative of third generation semi-conducting material, have that energy gap is large, electronics saturation drift velocity is high, puncture voltage is high and stable chemical nature and the strong high of radiation resistance, be particularly suitable for preparing the transistor possessing high temperature, high frequency, high-power and radiation-resisting performance, have broad application prospects in fields such as radar, satellite communication, Aero-Space, oil exploration, automotive electronics, Automated condtrol.In III-nitride, indium nitride electron mobility is the highest, and effective mass is minimum, and electron drift velocity is maximum.Therefore, be well suited for being applied to make HEMT(High Electron Mobility Transistor, High Electron Mobility Transistor) in channel layer.
The operation principle of gallium nitride radical heterojunction field effect transistor: because the bi-material energy gap forming heterojunction is different, potential well and potential barrier is defined at heterojunction boundary place, due to the free electron that polarity effect or modulation doping produce, be accumulated in the gallium nitride layer of undoped in the triangular quantum well at interface, form two-dimensional electron gas, owing to making these electronics in potential well be separated with the ionized impurity space in potential barrier, greatly reduce Coulomb scattering, thus significantly improve the mobility of material.After being developed into device, the two-dimensional electron gas at heterojunction boundary place can be controlled by gate electrode, under certain direct current (DC) bias, can amplify high-frequency microwave signal.
Short-channel effect can reduce device performance, is a major reason of restriction high-frequency element application.When device operating frequencies rises to millimeter wave band, the grid length of device must shorten to micro/nano-scale, and barrier layer thickness also needs to shorten in proportion simultaneously, otherwise short-channel effect will highlight.Short-channel effect shows: subthreshold current increases, and output conductance increases, and threshold voltage shift increases, and raceway groove pinch-off behavior is deteriorated.The limitation capability improving channel electrons can contain short-channel effect.For the AlGaN/GaN HEMT-structure of routine, the electronics in GaN raceway groove is only subject to the restriction of barrier layer side, and in resilient coating, potential barrier is provided by Two-dimensional electron self.When channel electrons exhausts gradually under large voltage, the potential barrier of that side of resilient coating fades away, and hot electron is easy to penetrate into resilient coating, causes the resilient coating of device to leak electricity, and device pinch-off behavior is deteriorated.
At present, mainly by aluminum gallium nitride resilient coating or indium gallium nitrogen resilient coating or carry out p-type doping techniques to nitride buffer layer and raise back of the body potential barrier, resilient coating is increased to the restriction of two-dimensional electron gas.But the scattering process of ternary alloy three-partalloy can reduce device heat dispersion in aluminum gallium nitride resilient coating or indium gallium nitrogen resilient coating.Doping can reduce the integrality of material lattice, thus causes the crystal mass of resilient coating to decline.Meanwhile, be difficult to realize to the p-type doping techniques of nitride buffer layer.
Utility model content
For prior art Problems existing, the purpose of this utility model is to provide a kind of indium nitride channel layer gallium nitride based transistor structure with high electron mobility.
For achieving the above object, the utility model provides a kind of indium nitride channel layer gallium nitride based transistor structure with high electron mobility, and this transistor arrangement comprises:
One substrate;
One nucleating layer, this nucleating layer makes over the substrate, and the thickness of this nucleating layer is 0.01-0.60 μm;
One resilient coating, this resilient coating is produced on above described nucleating layer;
One indium nitride channel layer, this indium nitride channel layer is produced on above described resilient coating, and thickness is 0.6-5 nm;
One aln inserting layer, this aln inserting layer is produced on above described indium nitride channel layer, and thickness is 0.7-5 nm;
One barrier layer, this barrier layer is produced on above described aln inserting layer;
One gallium nitride cap layers, this gallium nitride cap layers is produced on above described barrier layer, and thickness is 1-5 nm.
Further, the material of described barrier layer is In
xal
1-xn or Al
yga
1-yn, wherein 0≤x≤0.3,0.1≤y≤1, barrier layer gross thickness is 2-30 nm.
Further, the material of described resilient coating is Al
yga
1-yn, wherein 0≤y<0.10, thickness is 0.2-2.5 μm.
Further, described substrate is sapphire, silicon or carborundum, gallium nitride or aluminium nitride.
The advantage of indium nitride channel layer gallium nitride radical heterojunction high electron mobility transistor structure of the present utility model is: 1. by introducing indium nitride channel layer, form the back of the body potential barrier of restriction channel electrons, improve two-dimensional electron gas limitation capability, improve grid ability of regulation and control, reduce resilient coating electric leakage, the short-channel effect of suppression device.
2. under the condition not using ternary alloy three-partalloy resilient coating and p-type doping resilient coating, two-dimensional electron gas limitation capability can be improved.Avoid ternary alloy three-partalloy resilient coating degeneration device heat dispersion, reduce the manufacture difficulty of high two-dimensional electron gas limited characteristic transistor.
3. utilize indium nitride in III-nitride, electron mobility is the highest, and effective mass is minimum, and the characteristic that electron drift velocity is maximum improves the output characteristic of transistor.
4., by barrier height large between indium nitride channel layer and aln inserting layer, effectively containment channel electrons is to barrier layer and surperficial leakage.
5. this manufacture method can realize this novel high electron mobility transistor structure on concrete technology.
Accompanying drawing explanation
Fig. 1 is the schematic diagram of the utility model indium nitride channel layer gallium nitride based transistor structure with high electron mobility;
Fig. 2 is band structure and the electron density distribution figure of the utility model embodiment;
Fig. 3 is band structure and the electron density distribution figure of traditional indium aluminium nitrogen/gallium nitride HEMT.
Embodiment
Below, with reference to accompanying drawing, the utility model is more fully illustrated, shown in the drawings of exemplary embodiment of the present utility model.But the utility model can be presented as multiple multi-form, and should not be construed as the exemplary embodiment being confined to describe here.But, these embodiments are provided, thus make the utility model comprehensively with complete, and scope of the present utility model is fully conveyed to those of ordinary skill in the art.
For ease of illustrating, here can use such as " on ", the space relative terms such as D score " left side " " right side ", for illustration of the element of shown in figure or the feature relation relative to another element or feature.It should be understood that except the orientation shown in figure, spatial terminology is intended to comprise device different azimuth in use or operation.Such as, if the device in figure is squeezed, be stated as the element being positioned at other elements or feature D score will be positioned at other elements or feature " on ".Therefore, exemplary term D score can comprise upper and lower both orientation.Device can otherwise be located (90-degree rotation or be positioned at other orientation), and space used here illustrates relatively can correspondingly explain.
As shown in Figure 1, the utility model provides a kind of indium nitride channel layer gallium nitride based transistor structure with high electron mobility, and this transistor arrangement specifically comprises:
One substrate 10, this substrate is sapphire or silicon or carborundum or gallium nitride or aluminium nitride, but is not limited to these substrates;
One nucleating layer 20, this nucleating layer 20 is gallium nitride or aluminium nitride, is produced on above substrate 10, and thickness is 0.01-0.60 μm;
One resilient coating 30, this resilient coating 30 is produced on above gallium nitride or aln nucleation layer 20, and the material of a described resilient coating 30 is AlyGa1-yN, wherein 0≤y<0.10, and thickness is 0.2-2.5 μm;
One indium nitride channel layer 40, this indium nitride channel layer 40 is produced on above resilient coating 30, and thickness is 0.6-5 nm;
One aln inserting layer 50, this aln inserting layer 50 is produced on above indium nitride channel layer 40, and thickness is 0.7-5 nm;
One barrier layer 60, this barrier layer 60 is produced on above indium nitride channel layer 50, and the material of barrier layer 60 is In
xal
1-xn or Al
yga
1-yn, wherein 0≤x≤0.3,0.1≤y≤1, barrier layer gross thickness is 2-30 nm.
One gallium nitride cap layers 70, this gallium nitride cap layers 70 is produced on above barrier layer 60, and thickness is 1-5nm.
The making of the nucleating layer 20 below made over the substrate 10, resilient coating 30, indium nitride channel layer 40, aln inserting layer 50, barrier layer 60 and cap layers 70, including, but not limited to metal-organic chemical vapor deposition equipment method, molecular beam epitaxy and vapour phase epitaxy, preferentially adopts metal-organic chemical vapor deposition equipment method.
Key of the present utility model is, by introducing indium nitride channel layer 40, forming the back of the body potential barrier of restriction channel electrons, improving two-dimensional electron gas limitation capability, improve grid ability of regulation and control, reduces resilient coating electric leakage, the short-channel effect of suppression device.In addition, in III-nitride, indium nitride electron mobility is the highest, and effective mass is minimum, and electron drift velocity is maximum.Therefore, indium nitride channel layer is utilized can to improve the output characteristic of transistor.
In structure described in the utility model, indium nitride channel layer 40 is that in III-nitride, electron mobility is the highest, and effective mass is minimum, the material that electron drift velocity is maximum.Therefore, be well suited for being applied to the channel layer made in HEMT, for two-dimensional electron gas provides a good passage, significantly improve the output characteristic of device; Aln inserting layer 50 utilizes binary compound channel electrons and multi-element compounds barrier layer to be separated, and reduces electron scattering, improves raceway groove two-dimensional electron gas mobility; Another effect of one deck aluminium nitride is the feature utilizing its energy gap large bottom, and effectively containment channel electrons is to barrier layer 60 and surperficial leakage.
Fig. 2 calculates energy band diagram and the electron distributions figure of this heterojunction structure, as can be seen from the figure, this composite potential barrier layer material adopts indium nitride channel layer, very high back of the body potential barrier (being greater than 2eV) can be formed, the two-dimensional electron gas in raceway groove is made to obtain extraordinary restriction, obtain very high two-dimensional electron gas surface density simultaneously, reach 1.8 × 1013cm
-2.
Fig. 3 calculates band structure and the electron density distribution figure of conventional nitridation gallium/indium aluminium nitrogen/aluminium nitride/gallium nitride heterojunction structure, and as can be seen from the figure, the two-dimensional electron gas surface density of formation is 2.06 × 1013cm
-2, two-dimensional electron gas branch is wider, and its two-dimensional electron gas limitation capability is far below indium nitride channel layer gallium nitride based transistor structure with high electron mobility in Fig. 2.
The utility model by the introducing of indium nitride channel layer, can improve the restriction to two-dimensional electron gas face, and effectively restriction channel electrons is revealed to resilient coating, barrier layer and surface.The utility model significantly can improve the performance of gallium nitrate based high temperature, high frequency, high-power component and circuit.
The above; be only the embodiment in the utility model; but protection range of the present utility model is not limited thereto; any people being familiar with this technology is in the technical scope disclosed by the utility model; the conversion that can expect easily or replacement, all should be encompassed in of the present utility model comprising within scope.Therefore, protection range of the present utility model should be as the criterion with the protection range of claims.
Calculate energy band diagram and the electron distributions figure of this heterojunction structure as shown in Figure 2, gallium nitride based transistor structure with high electron mobility concrete structure is:
GaN (3nm)/In
0.18al
0.82n (15nm)/AlN (1nm)/InN (0.8nm)/GaN, wherein GaN cap thickness is 3nm, In
0.18al
0.82in N barrier layer, thickness is 15 nm, AlN insert layer thickness be 1 nm, InN channel layer thickness is 0.8nm, and resilient coating is GaN.
As can be seen from the figure, this composite potential barrier layer material adopts indium nitride channel layer, can form very high back of the body potential barrier (being greater than 2eV), make the two-dimensional electron gas in raceway groove obtain extraordinary restriction, obtain very high two-dimensional electron gas surface density simultaneously, reach 1.8 × 10
13cm
-2.
Be illustrated in figure 3 band structure and the electron density distribution figure of traditional indium aluminium nitrogen/gallium nitride HEMT, concrete computation structure is: GaN (3nm)/In
0.18al
0.82n (15nm)/AlN (1nm)/GaN gallium nitride based transistor structure with high electron mobility, wherein GaN cap thickness is 3nm, In
0.18al
0.82in N barrier layer, thickness is 15 nm, AlN insert layer thickness is 1 nm, and channel layer and resilient coating are GaN.
As can be seen from the figure, the two-dimensional electron gas surface density of formation is 2.06 × 1013cm
-2, two-dimensional electron gas branch is wider, and its two-dimensional electron gas limitation capability is far below indium nitride channel layer gallium nitride based transistor structure with high electron mobility in Fig. 2.
The utility model by the introducing of indium nitride channel layer, can improve the restriction to two-dimensional electron gas face, and effectively restriction channel electrons is revealed to resilient coating, barrier layer and surface.The utility model significantly can improve the performance of gallium nitrate based high temperature, high frequency, high-power component and circuit.
Claims (4)
1. indium nitride channel layer gallium nitride based transistor structure with high electron mobility, is characterized in that, this transistor arrangement comprises:
One substrate;
One nucleating layer, this nucleating layer makes over the substrate, and the thickness of this nucleating layer is 0.01-0.60 μm;
One resilient coating, this resilient coating is produced on above described nucleating layer;
One indium nitride channel layer, this indium nitride channel layer is produced on above described resilient coating, and thickness is 0.6-5 nm;
One aln inserting layer, this aln inserting layer is produced on above described indium nitride channel layer, and thickness is 0.7-5 nm;
One barrier layer, this barrier layer is produced on above described aln inserting layer;
One gallium nitride cap layers, this gallium nitride cap layers is produced on above described barrier layer, and thickness is 1-5 nm.
2. indium nitride channel layer gallium nitride based transistor structure with high electron mobility as claimed in claim 1, it is characterized in that, the material of described barrier layer is In
xal
1-xn or Al
yga
1-yn, wherein 0≤x≤0.3,0.1≤y≤1, barrier layer gross thickness is 2-30 nm.
3. indium nitride channel layer gallium nitride based transistor structure with high electron mobility as claimed in claim 1, it is characterized in that, the material of described resilient coating is Al
yga
1-yn, wherein 0≤y<0.10, thickness is 0.2-2.5 μm.
4. indium nitride channel layer gallium nitride based transistor structure with high electron mobility as claimed in claim 1, it is characterized in that, described substrate is sapphire, silicon or carborundum, gallium nitride or aluminium nitride.
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Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN111344868A (en) * | 2017-10-19 | 2020-06-26 | 阿卜杜拉国王科技大学 | High electron mobility transistor with boron nitride alloy interlayer and production method thereof |
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2015
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Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN111344868A (en) * | 2017-10-19 | 2020-06-26 | 阿卜杜拉国王科技大学 | High electron mobility transistor with boron nitride alloy interlayer and production method thereof |
| CN111344868B (en) * | 2017-10-19 | 2023-06-02 | 阿卜杜拉国王科技大学 | High electron mobility transistor with boron nitride alloy interlayer and method of manufacture |
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