CN104505402A - Indium nitride channel layer gallium nitride-based high-electron-mobility transistor structure - Google Patents
Indium nitride channel layer gallium nitride-based high-electron-mobility transistor structure Download PDFInfo
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- CN104505402A CN104505402A CN201510004119.0A CN201510004119A CN104505402A CN 104505402 A CN104505402 A CN 104505402A CN 201510004119 A CN201510004119 A CN 201510004119A CN 104505402 A CN104505402 A CN 104505402A
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- 229910002601 GaN Inorganic materials 0.000 title claims abstract description 49
- NWAIGJYBQQYSPW-UHFFFAOYSA-N azanylidyneindigane Chemical compound [In]#N NWAIGJYBQQYSPW-UHFFFAOYSA-N 0.000 title claims abstract description 43
- JMASRVWKEDWRBT-UHFFFAOYSA-N Gallium nitride Chemical compound [Ga]#N JMASRVWKEDWRBT-UHFFFAOYSA-N 0.000 title claims abstract description 33
- 230000004888 barrier function Effects 0.000 claims abstract description 30
- 239000000758 substrate Substances 0.000 claims abstract description 13
- 239000011248 coating agent Substances 0.000 claims description 33
- 238000000576 coating method Methods 0.000 claims description 33
- 239000000463 material Substances 0.000 claims description 12
- 229910017083 AlN Inorganic materials 0.000 claims description 10
- PIGFYZPCRLYGLF-UHFFFAOYSA-N Aluminum nitride Chemical compound [Al]#N PIGFYZPCRLYGLF-UHFFFAOYSA-N 0.000 claims description 10
- 229910052594 sapphire Inorganic materials 0.000 claims description 3
- 239000010980 sapphire Substances 0.000 claims description 3
- 229910052710 silicon Inorganic materials 0.000 claims description 3
- 239000010703 silicon Substances 0.000 claims description 3
- 229910010271 silicon carbide Inorganic materials 0.000 claims description 3
- 230000005533 two-dimensional electron gas Effects 0.000 abstract description 23
- 230000000694 effects Effects 0.000 abstract description 9
- PMHQVHHXPFUNSP-UHFFFAOYSA-M copper(1+);methylsulfanylmethane;bromide Chemical compound Br[Cu].CSC PMHQVHHXPFUNSP-UHFFFAOYSA-M 0.000 abstract 4
- 230000037431 insertion Effects 0.000 abstract 3
- 238000003780 insertion Methods 0.000 abstract 3
- 238000005036 potential barrier Methods 0.000 description 11
- 238000009826 distribution Methods 0.000 description 6
- 238000000034 method Methods 0.000 description 6
- 229910052738 indium Inorganic materials 0.000 description 5
- APFVFJFRJDLVQX-UHFFFAOYSA-N indium atom Chemical compound [In] APFVFJFRJDLVQX-UHFFFAOYSA-N 0.000 description 5
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 4
- CHPZKNULDCNCBW-UHFFFAOYSA-N gallium nitrate Chemical compound [Ga+3].[O-][N+]([O-])=O.[O-][N+]([O-])=O.[O-][N+]([O-])=O CHPZKNULDCNCBW-UHFFFAOYSA-N 0.000 description 4
- GYHNNYVSQQEPJS-UHFFFAOYSA-N Gallium Chemical compound [Ga] GYHNNYVSQQEPJS-UHFFFAOYSA-N 0.000 description 3
- IWBUYGUPYWKAMK-UHFFFAOYSA-N [AlH3].[N] Chemical compound [AlH3].[N] IWBUYGUPYWKAMK-UHFFFAOYSA-N 0.000 description 3
- RNQKDQAVIXDKAG-UHFFFAOYSA-N aluminum gallium Chemical compound [Al].[Ga] RNQKDQAVIXDKAG-UHFFFAOYSA-N 0.000 description 3
- 230000015572 biosynthetic process Effects 0.000 description 3
- 238000010586 diagram Methods 0.000 description 3
- 238000005516 engineering process Methods 0.000 description 3
- 229910052733 gallium Inorganic materials 0.000 description 3
- 229910002058 ternary alloy Inorganic materials 0.000 description 3
- 230000033228 biological regulation Effects 0.000 description 2
- 238000005229 chemical vapour deposition Methods 0.000 description 2
- 239000002131 composite material Substances 0.000 description 2
- 150000001875 compounds Chemical class 0.000 description 2
- 239000006185 dispersion Substances 0.000 description 2
- 229940044658 gallium nitrate Drugs 0.000 description 2
- 238000004519 manufacturing process Methods 0.000 description 2
- 150000004767 nitrides Chemical class 0.000 description 2
- 229910052757 nitrogen Inorganic materials 0.000 description 2
- 239000004065 semiconductor Substances 0.000 description 2
- 230000001629 suppression Effects 0.000 description 2
- 229910002704 AlGaN Inorganic materials 0.000 description 1
- 238000006243 chemical reaction Methods 0.000 description 1
- 238000004891 communication Methods 0.000 description 1
- 239000013078 crystal Substances 0.000 description 1
- 230000007423 decrease Effects 0.000 description 1
- 230000007850 degeneration Effects 0.000 description 1
- 230000005611 electricity Effects 0.000 description 1
- 238000001803 electron scattering Methods 0.000 description 1
- 230000005669 field effect Effects 0.000 description 1
- 239000003574 free electron Substances 0.000 description 1
- 239000002784 hot electron Substances 0.000 description 1
- 239000012535 impurity Substances 0.000 description 1
- 238000001451 molecular beam epitaxy Methods 0.000 description 1
- 230000006911 nucleation Effects 0.000 description 1
- 238000010899 nucleation Methods 0.000 description 1
- 239000003921 oil Substances 0.000 description 1
- 230000005855 radiation Effects 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
- 238000000927 vapour-phase epitaxy Methods 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
- H01L29/06—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
- H01L29/06—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions
- H01L29/10—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions with semiconductor regions connected to an electrode not carrying current to be rectified, amplified or switched and such electrode being part of a semiconductor device which comprises three or more electrodes
- H01L29/1025—Channel region of field-effect devices
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
- H01L29/12—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed
- H01L29/20—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed including, apart from doping materials or other impurities, only AIIIBV compounds
- H01L29/2003—Nitride compounds
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/66007—Multistep manufacturing processes
- H01L29/66075—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials
- H01L29/66227—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials the devices being controllable only by the electric current supplied or the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched, e.g. three-terminal devices
- H01L29/66409—Unipolar field-effect transistors
- H01L29/66431—Unipolar field-effect transistors with a heterojunction interface channel or gate, e.g. HFET, HIGFET, SISFET, HJFET, HEMT
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/772—Field effect transistors
- H01L29/778—Field effect transistors with two-dimensional charge carrier gas channel, e.g. HEMT ; with two-dimensional charge-carrier layer formed at a heterojunction interface
Abstract
The invention discloses an indium nitride channel layer gallium nitride-based high-electron-mobility transistor structure. The structure comprises a substrate, a nucleating layer, a buffer layer, an indium nitride channel layer, an aluminum nitride channel layer, an aluminum nitride insertion layer, a barrier layer and a gallium nitride cap layer, wherein the nucleating layer is manufactured on the substrate; the thickness of the nucleating layer is 0.01-0.60 mum; the buffer layer is manufactured on the nucleating layer; the indium nitride channel layer is manufactured on the buffer layer and has the thickness of 0.6-5 nm; the aluminum nitride insertion layer is manufactured on the indium nitride channel layer and has the thickness of 0.7-5 nm; the barrier layer is manufactured on the aluminum nitride insertion layer; the gallium nitride cap layer is manufactured on the barrier layer and has the thickness of 1-5 nm. By introducing the indium nitride channel layer, a back barrier for limiting channel electrons is formed, so the two-dimensional electron gas limiting capacity is improved, the grid control capacity is improved, the electric leakage of the buffer layer is reduced, and a short channel effect of the device is inhibited.
Description
Technical field
The present invention relates to technical field of semiconductors, particularly relate to a kind of indium nitride channel layer gallium nitride radical heterojunction high electron mobility transistor structure, this transistor uses indium nitride as channel layer, and adopt aluminum gallium nitride as resistive formation, the limitation capability to two-dimensional electron gas can be significantly improved, the electric leakage of containment resilient coating, improves the reliability of devices function.
Background technology
Gallium nitride is as the Typical Representative of third generation semi-conducting material, have that energy gap is large, electronics saturation drift velocity is high, puncture voltage is high and stable chemical nature and the strong high of radiation resistance, be particularly suitable for preparing the transistor possessing high temperature, high frequency, high-power and radiation-resisting performance, have broad application prospects in fields such as radar, satellite communication, Aero-Space, oil exploration, automotive electronics, Automated condtrol.In III-nitride, indium nitride electron mobility is the highest, and effective mass is minimum, and electron drift velocity is maximum.Therefore, be well suited for being applied to make HEMT(High Electron Mobility Transistor, High Electron Mobility Transistor) in channel layer.
The operation principle of gallium nitride radical heterojunction field effect transistor: because the bi-material energy gap forming heterojunction is different, potential well and potential barrier is defined at heterojunction boundary place, due to the free electron that polarity effect or modulation doping produce, be accumulated in the gallium nitride layer of undoped in the triangular quantum well at interface, form two-dimensional electron gas, owing to making these electronics in potential well be separated with the ionized impurity space in potential barrier, greatly reduce Coulomb scattering, thus significantly improve the mobility of material.After being developed into device, the two-dimensional electron gas at heterojunction boundary place can be controlled by gate electrode, under certain direct current (DC) bias, can amplify high-frequency microwave signal.
Short-channel effect can reduce device performance, is a major reason of restriction high-frequency element application.When device operating frequencies rises to millimeter wave band, the grid length of device must shorten to micro/nano-scale, and barrier layer thickness also needs to shorten in proportion simultaneously, otherwise short-channel effect will highlight.Short-channel effect shows: subthreshold current increases, and output conductance increases, and threshold voltage shift increases, and raceway groove pinch-off behavior is deteriorated.The limitation capability improving channel electrons can contain short-channel effect.For the AlGaN/GaN HEMT-structure of routine, the electronics in GaN raceway groove is only subject to the restriction of barrier layer side, and in resilient coating, potential barrier is provided by Two-dimensional electron self.When channel electrons exhausts gradually under large voltage, the potential barrier of that side of resilient coating fades away, and hot electron is easy to penetrate into resilient coating, causes the resilient coating of device to leak electricity, and device pinch-off behavior is deteriorated.
At present, mainly by aluminum gallium nitride resilient coating or indium gallium nitrogen resilient coating or carry out p-type doping techniques to nitride buffer layer and raise back of the body potential barrier, resilient coating is increased to the restriction of two-dimensional electron gas.But the scattering process of ternary alloy three-partalloy can reduce device heat dispersion in aluminum gallium nitride resilient coating or indium gallium nitrogen resilient coating.Doping can reduce the integrality of material lattice, thus causes the crystal mass of resilient coating to decline.Meanwhile, be difficult to realize to the p-type doping techniques of nitride buffer layer.
Summary of the invention
For prior art Problems existing, the object of the present invention is to provide a kind of indium nitride channel layer gallium nitride based transistor structure with high electron mobility.
For achieving the above object, the invention provides a kind of indium nitride channel layer gallium nitride based transistor structure with high electron mobility, this transistor arrangement comprises:
One substrate;
One nucleating layer, this nucleating layer makes over the substrate, and the thickness of this nucleating layer is 0.01-0.60 μm;
One resilient coating, this resilient coating is produced on above described nucleating layer;
One indium nitride channel layer, this indium nitride channel layer is produced on above described resilient coating, and thickness is 0.6-5 nm;
One aln inserting layer, this aln inserting layer is produced on above described indium nitride channel layer, and thickness is 0.7-5 nm;
One barrier layer, this barrier layer is produced on above described aln inserting layer;
One gallium nitride cap layers, this gallium nitride cap layers is produced on above described barrier layer, and thickness is 1-5 nm.
Further, the material of described barrier layer is In
xal
1-xn or Al
yga
1-yn, wherein 0≤x≤0.3,0.1≤y≤1, barrier layer gross thickness is 2-30 nm.
Further, the material of described resilient coating is Al
yga
1-yn, wherein 0≤y<0.10, thickness is 0.2-2.5 μm.
Further, described substrate is sapphire, silicon or carborundum, gallium nitride or aluminium nitride.
The advantage of indium nitride channel layer gallium nitride radical heterojunction high electron mobility transistor structure of the present invention is: 1. by introducing indium nitride channel layer, form the back of the body potential barrier of restriction channel electrons, improve two-dimensional electron gas limitation capability, improve grid ability of regulation and control, reduce resilient coating electric leakage, the short-channel effect of suppression device.
2. under the condition not using ternary alloy three-partalloy resilient coating and p-type doping resilient coating, two-dimensional electron gas limitation capability can be improved.Avoid ternary alloy three-partalloy resilient coating degeneration device heat dispersion, reduce the manufacture difficulty of high two-dimensional electron gas limited characteristic transistor.
3. utilize indium nitride in III-nitride, electron mobility is the highest, and effective mass is minimum, and the characteristic that electron drift velocity is maximum improves the output characteristic of transistor.
4., by barrier height large between indium nitride channel layer and aln inserting layer, effectively containment channel electrons is to barrier layer and surperficial leakage.
5. this manufacture method can realize this novel high electron mobility transistor structure on concrete technology.
Accompanying drawing explanation
Fig. 1 is the schematic diagram of indium nitride channel layer gallium nitride based transistor structure with high electron mobility of the present invention;
Fig. 2 is band structure and the electron density distribution figure of the embodiment of the present invention;
Fig. 3 is band structure and the electron density distribution figure of traditional indium aluminium nitrogen/gallium nitride HEMT.
Embodiment
Below, with reference to accompanying drawing, the present invention is more fully illustrated, shown in the drawings of exemplary embodiment of the present invention.But the present invention can be presented as multiple multi-form, and should not be construed as the exemplary embodiment being confined to describe here.But, these embodiments are provided, thus make the present invention comprehensively with complete, and scope of the present invention is fully conveyed to those of ordinary skill in the art.
For ease of illustrating, here can use such as " on ", the space relative terms such as D score " left side " " right side ", for illustration of the element of shown in figure or the feature relation relative to another element or feature.It should be understood that except the orientation shown in figure, spatial terminology is intended to comprise device different azimuth in use or operation.Such as, if the device in figure is squeezed, be stated as the element being positioned at other elements or feature D score will be positioned at other elements or feature " on ".Therefore, exemplary term D score can comprise upper and lower both orientation.Device can otherwise be located (90-degree rotation or be positioned at other orientation), and space used here illustrates relatively can correspondingly explain.
As shown in Figure 1, the invention provides a kind of indium nitride channel layer gallium nitride based transistor structure with high electron mobility, this transistor arrangement specifically comprises:
One substrate 10, this substrate is sapphire or silicon or carborundum or gallium nitride or aluminium nitride, but is not limited to these substrates;
One nucleating layer 20, this nucleating layer 20 is gallium nitride or aluminium nitride, is produced on above substrate 10, and thickness is 0.01-0.60 μm;
One resilient coating 30, this resilient coating 30 is produced on above gallium nitride or aln nucleation layer 20, and the material of a described resilient coating 30 is AlyGa1-yN, wherein 0≤y<0.10, and thickness is 0.2-2.5 μm;
One indium nitride channel layer 40, this indium nitride channel layer 40 is produced on above resilient coating 30, and thickness is 0.6-5 nm;
One aln inserting layer 50, this aln inserting layer 50 is produced on above indium nitride channel layer 40, and thickness is 0.7-5 nm;
One barrier layer 60, this barrier layer 60 is produced on above indium nitride channel layer 50, and the material of barrier layer 60 is In
xal
1-xn or Al
yga
1-yn, wherein 0≤x≤0.3,0.1≤y≤1, barrier layer gross thickness is 2-30 nm.
One gallium nitride cap layers 70, this gallium nitride cap layers 70 is produced on above barrier layer 60, and thickness is 1-5nm.
The making of the nucleating layer 20 below made over the substrate 10, resilient coating 30, indium nitride channel layer 40, aln inserting layer 50, barrier layer 60 and cap layers 70, including, but not limited to metal-organic chemical vapor deposition equipment method, molecular beam epitaxy and vapour phase epitaxy, preferentially adopts metal-organic chemical vapor deposition equipment method.
Key of the present invention is, by introducing indium nitride channel layer 40, forming the back of the body potential barrier of restriction channel electrons, improving two-dimensional electron gas limitation capability, improve grid ability of regulation and control, reduces resilient coating electric leakage, the short-channel effect of suppression device.In addition, in III-nitride, indium nitride electron mobility is the highest, and effective mass is minimum, and electron drift velocity is maximum.Therefore, indium nitride channel layer is utilized can to improve the output characteristic of transistor.
In structure of the present invention, indium nitride channel layer 40 is that in III-nitride, electron mobility is the highest, and effective mass is minimum, the material that electron drift velocity is maximum.Therefore, be well suited for being applied to the channel layer made in HEMT, for two-dimensional electron gas provides a good passage, significantly improve the output characteristic of device; Aln inserting layer 50 utilizes binary compound channel electrons and multi-element compounds barrier layer to be separated, and reduces electron scattering, improves raceway groove two-dimensional electron gas mobility; Another effect of one deck aluminium nitride is the feature utilizing its energy gap large bottom, and effectively containment channel electrons is to barrier layer 60 and surperficial leakage.
Fig. 2 calculates energy band diagram and the electron distributions figure of this heterojunction structure, as can be seen from the figure, this composite potential barrier layer material adopts indium nitride channel layer, very high back of the body potential barrier (being greater than 2eV) can be formed, the two-dimensional electron gas in raceway groove is made to obtain extraordinary restriction, obtain very high two-dimensional electron gas surface density simultaneously, reach 1.8 × 1013cm
-2.
Fig. 3 calculates band structure and the electron density distribution figure of conventional nitridation gallium/indium aluminium nitrogen/aluminium nitride/gallium nitride heterojunction structure, and as can be seen from the figure, the two-dimensional electron gas surface density of formation is 2.06 × 1013cm
-2, two-dimensional electron gas branch is wider, and its two-dimensional electron gas limitation capability is far below indium nitride channel layer gallium nitride based transistor structure with high electron mobility in Fig. 2.
The present invention by the introducing of indium nitride channel layer, can improve the restriction to two-dimensional electron gas face, and effectively restriction channel electrons is revealed to resilient coating, barrier layer and surface.The present invention significantly can improve the performance of gallium nitrate based high temperature, high frequency, high-power component and circuit.
The above; be only the embodiment in the present invention, but protection scope of the present invention is not limited thereto, any people being familiar with this technology is in the technical scope disclosed by the present invention; the conversion that can expect easily or replacement, all should be encompassed in of the present invention comprising within scope.Therefore, protection scope of the present invention should be as the criterion with the protection range of claims.
Calculate energy band diagram and the electron distributions figure of this heterojunction structure as shown in Figure 2, gallium nitride based transistor structure with high electron mobility concrete structure is:
GaN (3nm)/In0.18Al0.82N (15nm)/AlN (1nm)/InN (0.8nm)/GaN, wherein GaN cap thickness is 3nm, in In0.18Al0.82N barrier layer, thickness is 15 nm, AlN insert layer thickness is 1 nm, InN channel layer thickness is 0.8nm, and resilient coating is GaN.
As can be seen from the figure, this composite potential barrier layer material adopts indium nitride channel layer, can form very high back of the body potential barrier (being greater than 2eV), make the two-dimensional electron gas in raceway groove obtain extraordinary restriction, obtain very high two-dimensional electron gas surface density simultaneously, reach 1.8 × 1013cm-2.
Be illustrated in figure 3 band structure and the electron density distribution figure of traditional indium aluminium nitrogen/gallium nitride HEMT, concrete computation structure is: GaN (3nm)/In0.18Al0.82N (15nm)/AlN (1nm)/GaN gallium nitride based transistor structure with high electron mobility, wherein GaN cap thickness is 3nm, in In0.18Al0.82N barrier layer, thickness is 15 nm, AlN insert layer thickness is 1 nm, and channel layer and resilient coating are GaN.
As can be seen from the figure, the two-dimensional electron gas surface density of formation is 2.06 × 1013cm-2, and two-dimensional electron gas branch is wider, and its two-dimensional electron gas limitation capability is far below indium nitride channel layer gallium nitride based transistor structure with high electron mobility in Fig. 2.
The present invention by the introducing of indium nitride channel layer, can improve the restriction to two-dimensional electron gas face, and effectively restriction channel electrons is revealed to resilient coating, barrier layer and surface.The present invention significantly can improve the performance of gallium nitrate based high temperature, high frequency, high-power component and circuit.
Claims (4)
1. indium nitride channel layer gallium nitride based transistor structure with high electron mobility, is characterized in that, this transistor arrangement comprises:
One substrate;
One nucleating layer, this nucleating layer makes over the substrate, and the thickness of this nucleating layer is 0.01-0.60 μm;
One resilient coating, this resilient coating is produced on above described nucleating layer;
One indium nitride channel layer, this indium nitride channel layer is produced on above described resilient coating, and thickness is 0.6-5 nm;
One aln inserting layer, this aln inserting layer is produced on above described indium nitride channel layer, and thickness is 0.7-5 nm;
One barrier layer, this barrier layer is produced on above described aln inserting layer;
One gallium nitride cap layers, this gallium nitride cap layers is produced on above described barrier layer, and thickness is 1-5 nm.
2. indium nitride channel layer gallium nitride based transistor structure with high electron mobility as claimed in claim 1, it is characterized in that, the material of described barrier layer is In
xal
1-xn or Al
yga
1-yn, wherein 0≤x≤0.3,0.1≤y≤1, barrier layer gross thickness is 2-30 nm.
3. indium nitride channel layer gallium nitride based transistor structure with high electron mobility as claimed in claim 1, it is characterized in that, the material of described resilient coating is Al
yga
1-yn, wherein 0≤y<0.10, thickness is 0.2-2.5 μm.
4. indium nitride channel layer gallium nitride based transistor structure with high electron mobility as claimed in claim 1, it is characterized in that, described substrate is sapphire, silicon or carborundum, gallium nitride or aluminium nitride.
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| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201510004119.0A CN104505402A (en) | 2015-01-06 | 2015-01-06 | Indium nitride channel layer gallium nitride-based high-electron-mobility transistor structure |
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|---|---|---|---|
| CN201510004119.0A CN104505402A (en) | 2015-01-06 | 2015-01-06 | Indium nitride channel layer gallium nitride-based high-electron-mobility transistor structure |
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Family
ID=52947138
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Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN107170674A (en) * | 2017-06-16 | 2017-09-15 | 北京华进创威电子有限公司 | A kind of GaN device growth in situ graphene buried electrodes structure and preparation method |
| CN111344868A (en) * | 2017-10-19 | 2020-06-26 | 阿卜杜拉国王科技大学 | High electron mobility transistor with boron nitride alloy interlayer and production method thereof |
-
2015
- 2015-01-06 CN CN201510004119.0A patent/CN104505402A/en active Pending
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN107170674A (en) * | 2017-06-16 | 2017-09-15 | 北京华进创威电子有限公司 | A kind of GaN device growth in situ graphene buried electrodes structure and preparation method |
| CN111344868A (en) * | 2017-10-19 | 2020-06-26 | 阿卜杜拉国王科技大学 | High electron mobility transistor with boron nitride alloy interlayer and production method thereof |
| CN111344868B (en) * | 2017-10-19 | 2023-06-02 | 阿卜杜拉国王科技大学 | High electron mobility transistor with boron nitride alloy interlayer and method of manufacture |
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