CN204302942U - Electrostatic transducer - Google Patents
Electrostatic transducer Download PDFInfo
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- CN204302942U CN204302942U CN201420770414.8U CN201420770414U CN204302942U CN 204302942 U CN204302942 U CN 204302942U CN 201420770414 U CN201420770414 U CN 201420770414U CN 204302942 U CN204302942 U CN 204302942U
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- layer
- conductive layer
- articulamentum
- protective layer
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- 239000010410 layer Substances 0.000 claims abstract description 157
- 239000011241 protective layer Substances 0.000 claims abstract description 85
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 claims abstract description 61
- 239000000463 material Substances 0.000 claims abstract description 37
- 239000010949 copper Substances 0.000 claims abstract description 35
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 claims abstract description 28
- 229910052802 copper Inorganic materials 0.000 claims abstract description 28
- 229910052759 nickel Inorganic materials 0.000 claims abstract description 28
- MRNHPUHPBOKKQT-UHFFFAOYSA-N indium;tin;hydrate Chemical group O.[In].[Sn] MRNHPUHPBOKKQT-UHFFFAOYSA-N 0.000 claims description 8
- 238000000034 method Methods 0.000 description 34
- 238000005530 etching Methods 0.000 description 32
- 239000002184 metal Substances 0.000 description 18
- 229910052751 metal Inorganic materials 0.000 description 18
- 230000015572 biosynthetic process Effects 0.000 description 13
- 239000007788 liquid Substances 0.000 description 10
- 238000004519 manufacturing process Methods 0.000 description 9
- 230000000052 comparative effect Effects 0.000 description 8
- 230000000694 effects Effects 0.000 description 6
- 229910003336 CuNi Inorganic materials 0.000 description 5
- 239000000956 alloy Substances 0.000 description 5
- 238000005229 chemical vapour deposition Methods 0.000 description 4
- 239000004020 conductor Substances 0.000 description 4
- 238000005240 physical vapour deposition Methods 0.000 description 4
- 229910045601 alloy Inorganic materials 0.000 description 3
- 229920005644 polyethylene terephthalate glycol copolymer Polymers 0.000 description 3
- 238000004544 sputter deposition Methods 0.000 description 3
- 229910000881 Cu alloy Inorganic materials 0.000 description 2
- SECXISVLQFMRJM-UHFFFAOYSA-N N-Methylpyrrolidone Chemical compound CN1CCCC1=O SECXISVLQFMRJM-UHFFFAOYSA-N 0.000 description 2
- QAOWNCQODCNURD-UHFFFAOYSA-N Sulfuric acid Chemical compound OS(O)(=O)=O QAOWNCQODCNURD-UHFFFAOYSA-N 0.000 description 2
- 230000005540 biological transmission Effects 0.000 description 2
- 230000008020 evaporation Effects 0.000 description 2
- 238000001704 evaporation Methods 0.000 description 2
- 239000000178 monomer Substances 0.000 description 2
- 238000004804 winding Methods 0.000 description 2
- 229910021578 Iron(III) chloride Inorganic materials 0.000 description 1
- 208000037656 Respiratory Sounds Diseases 0.000 description 1
- 239000002253 acid Substances 0.000 description 1
- 239000007864 aqueous solution Substances 0.000 description 1
- 239000006071 cream Substances 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 239000011521 glass Substances 0.000 description 1
- AMGQUBHHOARCQH-UHFFFAOYSA-N indium;oxotin Chemical compound [In].[Sn]=O AMGQUBHHOARCQH-UHFFFAOYSA-N 0.000 description 1
- 239000011229 interlayer Substances 0.000 description 1
- RBTARNINKXHZNM-UHFFFAOYSA-K iron trichloride Chemical compound Cl[Fe](Cl)Cl RBTARNINKXHZNM-UHFFFAOYSA-K 0.000 description 1
- 239000007769 metal material Substances 0.000 description 1
- 239000003595 mist Substances 0.000 description 1
- 229920003986 novolac Polymers 0.000 description 1
- 238000001259 photo etching Methods 0.000 description 1
- -1 salt acids Chemical class 0.000 description 1
- 239000012780 transparent material Substances 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/84—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by variation of applied mechanical force, e.g. of pressure
-
- G—PHYSICS
- G06—COMPUTING; CALCULATING OR COUNTING
- G06F—ELECTRIC DIGITAL DATA PROCESSING
- G06F3/00—Input arrangements for transferring data to be processed into a form capable of being handled by the computer; Output arrangements for transferring data from processing unit to output unit, e.g. interface arrangements
- G06F3/01—Input arrangements or combined input and output arrangements for interaction between user and computer
- G06F3/03—Arrangements for converting the position or the displacement of a member into a coded form
- G06F3/041—Digitisers, e.g. for touch screens or touch pads, characterised by the transducing means
- G06F3/044—Digitisers, e.g. for touch screens or touch pads, characterised by the transducing means by capacitive means
- G06F3/0446—Digitisers, e.g. for touch screens or touch pads, characterised by the transducing means by capacitive means using a grid-like structure of electrodes in at least two directions, e.g. using row and column electrodes
Landscapes
- Engineering & Computer Science (AREA)
- General Engineering & Computer Science (AREA)
- Theoretical Computer Science (AREA)
- Physics & Mathematics (AREA)
- General Physics & Mathematics (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Computer Hardware Design (AREA)
- Human Computer Interaction (AREA)
- Ceramic Engineering (AREA)
- Position Input By Displaying (AREA)
- Laminated Bodies (AREA)
Abstract
A kind of electrostatic transducer is provided, while the adhesion maintaining conductive layer, suppresses the refinement of each layer particularly conductive layer, possess the wiring pattern of the structure that protective layer is not given prominence to eaves shape relative to conductive layer.The wiring pattern that this electrostatic transducer is formed with electrode pattern on the surface of base material and is electrically connected with electrode pattern; at least wiring pattern possess formed on base material transparent electrode layer, formed on transparent electrode layer and comprise copper and mickel articulamentum, formed on articulamentum and the containing ratio of copper than connecting the conductive layer of floor height and being formed on the electrically conductive and comprise the protective layer of copper and mickel; articulamentum is than protection thickness; the containing ratio of the nickel in protective layer is larger than the containing ratio of the nickel in conductive layer, and conductive layer is than above-mentioned protection thickness.
Description
Technical field
The utility model relates to the electrostatic transducer used in touch panel and other input unit.
Background technology
Electrostatic transducer described in patent document 1 is that multiple transparency electrode is formed by mutually insulated on base material.Electrode uses as drive electrode and detecting electrode successively, provides the driving electric power of pulse type to drive electrode.Be capacitively coupled between electrode, if but the finger of people is close, then except interelectrode Capacitance Coupled, also between finger and electrode, form electrostatic capacitance.By detecting the current value from detecting electrode, can judge to point close electrode.
The Wiring structure of this electrostatic transducer be provided with to be formed on base material and with the first wiring layer that above-mentioned electrode layer connects and the conductive layer overlapping with this first wiring layer.Electrode layer and the first wiring layer are made up of ITO, and conductive layer uses Cu cream to be formed.And then, on the surface of the first wiring layer, in order to improve the adhesion between above-mentioned conductive layer, be formed with the metal level of the alloy comprising copper and mickel, via above-mentioned metal level, the first wiring layer and conductive layer electrical connection.This Wiring structure, by defining on the protective layer of corronil and the basis of resist on the electrically conductive, after forming the pattern of metal level and conductive layer, forms the pattern of the first wiring layer and manufactures in metal etch operation in ITO etching procedure.
Patent document 1: Japanese Unexamined Patent Publication 2013-167992 publication
In the manufacturing process of the Wiring structure described in patent document 1; the etching speed of the metal etch of copper faster (etch rate is high) compared with corronil; therefore in metal etch operation, relative to metal level and protective layer, conductive layer easily becomes comparatively thin (narrower).And then; in ITO etching procedure; by the galvanic action (battery effect) of each interlayer in etching liquid; each layer easily attenuates; particularly the refinement of conductive layer makes progress, and therefore protective layer easily becomes " eaves (ひ さ) " shape ground shape outstanding laterally relative to conductive layer.The wiring produced like this has the eaves part of protective layer in follow-up operation or etching that situation about peeling off occurs, and has the eaves part of stripping to become the such problem of short circuit reason between wiring.
Utility model content
Therefore the purpose of this utility model is, suppress while a kind of adhesion maintaining conductive layer is provided each layer particularly conductive layer refinement and possess the electrostatic transducer of the wiring pattern of the structure that protective layer is not given prominence to eaves shape relative to conductive layer.
In order to solve above-mentioned problem, the electrostatic transducer of the first form of the present utility model is formed with electrode pattern on the surface of base material, and the wiring pattern to be electrically connected with electrode pattern, it is characterized in that, at least wiring pattern has: the transparent electrode layer formed on base material, transparent electrode layer is formed and comprises the articulamentum of copper and mickel, articulamentum is formed and the conductive layer of the containing ratio of copper ratio connection floor height, formed on the electrically conductive and comprise the protective layer of copper and mickel, articulamentum is than protection thickness, the containing ratio of the nickel in protective layer is larger than the containing ratio of the nickel in conductive layer, conductive layer is than protection thickness.
According to this formation, can prevent conductive layer from attenuating relative to protective layer and the end of protective layer is given prominence to eaves shape laterally relative to conductive layer.Thereby, it is possible to prevent in etching procedure, stripping process or to peel off from base material at wiring pattern afterwards.Further, the refinement of transparent electrode layer and articulamentum can be suppressed, therefore, it is possible to reliably maintain the stationary state of articulamentum and transparent electrode layer, can prevent wiring pattern from peeling off from base material.
In the electrostatic transducer of the first form of the present utility model, preferably, the thickness of articulamentum is more than 2 times of the thickness of protective layer.
Thereby, it is possible to reliably suppress the refinement (Japanese original text: Fine り) of articulamentum, therefore, it is possible to prevent wiring pattern from peeling off from base material.
In the electrostatic transducer of the first form of the present utility model, preferably, the containing ratio of the nickel in articulamentum is larger than the containing ratio of the nickel in protective layer.
Thus, if make the etch rate of protective layer and conductive layer be close value, then can prevent protective layer from giving prominence to from conductive layer with eaves shape.Further, because the etch rate of articulamentum is compared slack-off with protective layer with conductive layer, therefore, it is possible to maintain the adhesion of articulamentum and transparent electrode layer.
In the electrostatic transducer of the first form of the present utility model, preferably, the resistance of conductive layer is lower than transparency conducting layer.
In the electrostatic transducer of the first form of the present utility model, preferably, the resistance of articulamentum, conductive layer, protective layer is lower than transparency conducting layer.
In the electrostatic transducer of the first form of the present utility model, preferably, conductive layer is copper Cu.
In the electrostatic transducer of the first form of the present utility model, preferably, transparent electrode layer is tin indium oxide ITO.
The wiring pattern that the electrostatic transducer of the second form of the present utility model is formed with electrode pattern on the surface of base material and is electrically connected with electrode pattern; it is characterized in that; at least wiring pattern possesses: the transparent electrode layer formed on base material, formed on transparent electrode layer and comprise copper and mickel articulamentum, formed on articulamentum and the containing ratio of copper than connecting the conductive layer of floor height and being formed on the electrically conductive and comprise the protective layer of copper and mickel, the containing ratio of the nickel in articulamentum is larger than the containing ratio of the nickel in protective layer.
According to this formation, if improve the containing ratio of nickel, etch rate is slack-off, therefore, it is possible to prevent conductive layer from attenuating relative to protective layer and making the end of protective layer give prominence to laterally with eaves shape relative to conductive layer.Thus, can to prevent in etching procedure, stripping process or to peel off from base material at wiring pattern afterwards.Further, the refinement of transparent electrode layer and articulamentum can be suppressed, therefore, it is possible to reliably maintain the stationary state of articulamentum and transparent electrode layer, can prevent wiring pattern from peeling off from base material.
In the electrostatic transducer of the second form of the present utility model, preferably, the resistance of conductive layer is lower than transparency conducting layer.
In the electrostatic transducer of the second form of the present utility model, preferably, the resistance of articulamentum, conductive layer, protective layer is lower than transparency conducting layer.
In the electrostatic transducer of the second form of the present utility model, preferably, conductive layer is copper Cu.
In the electrostatic transducer of the second form of the present utility model, preferably, transparent electrode layer is tin indium oxide ITO.
The effect of utility model
According to the utility model, suppress while a kind of adhesion maintaining conductive layer can be provided each layer particularly conductive layer refinement and possess the electrostatic transducer of the wiring pattern of the structure that protective layer is not given prominence to eaves shape relative to conductive layer.
Accompanying drawing explanation
Fig. 1 is the top view of the formation of the input unit representing the electrostatic transducer possessing embodiment of the present utility model.
Fig. 2 A ~ Fig. 2 D is the profile of the manufacturing process of the wiring pattern (cut-off parts at the A-A line place of Fig. 1) of the electrostatic transducer representing embodiment.
Fig. 3 A is the top view photograph of the wiring pattern of embodiment 1, and Fig. 3 B is the top view photograph of the wiring pattern of embodiment 2.
Fig. 4 A ~ Fig. 4 D is the profile of the manufacturing process of the wiring pattern of the electrostatic transducer representing comparative example 1.
Fig. 5 is the top view photograph of the wiring pattern of comparative example 1.
Symbol description:
10 input units, 13X electrode pattern, 13a wide cut electrode section, 14Y electrode pattern, 14a wide cut electrode section, 16 wiring patterns, 20 base materials, 31 transparent electrode layers, 32 articulamentums, 33 conductive layers, 34 protective layers.
Detailed description of the invention
Below, limit describes the electrostatic transducer of embodiment of the present utility model in detail with reference to accompanying drawing limit.Present embodiment is example electrostatic transducer of the present utility model being applied to the input unit shown in Fig. 1, but electrostatic transducer of the present utility model also can be applied to the input unit of the electrostatic capacitive beyond this input unit.
First, limit illustrates the input unit 10 of present embodiment and the formation of electrostatic transducer with reference to Fig. 1 limit.Fig. 1 is the top view of the formation representing input unit 10.In the following description, " transparent ", " light transmission " refers to, visible rays transmitance is the state of more than 50% (preferably more than 80%).And then mist degree (Japanese original text: ヘ イ ズ) value be less than 6 is preferred.
As shown in Figure 1, in input unit 10, be provided with the input area 11 of light transmission, based on electrostatic capacitance change when carrying out input operation with finger in input area 11, the operation coordinate position of finger can be detected.The surrounding in the outside of input area 11 is the edge part regions 12 as non-input region.
Many X electrode patterns 13 and many Y electrode patterns 14 are configured with at input area 11.Each electrode pattern 13,14 all on the surperficial 20a of base material 20 by the transparent conductive material of ITO (Indium Tin Oxide: tin indium oxide) etc. by sputtering or evaporation and film forming.X electrode pattern 13 and many Y electrode patterns 14 are at cross part mutually insulated.
The base material 20 being formed with electrode pattern 13,14 is from the teeth outwards formed by the transparent material of PETG (PET) etc. or glass plate.
As shown in Figure 1, each X electrode pattern 13 extends along the Y1-Y2 direction that X-Y overlooks, and the configuration spaced apart on X1-X2 direction of each X electrode pattern 13.Each X electrode pattern 13 separates the interval of regulation on Y1-Y2 direction and connects multiple wide cut electrode section 13a is set.
Each Y electrode pattern 14 extends along the X1-X2 direction that X-Y overlooks, and the configuration spaced apart on Y1-Y2 direction of each Y electrode pattern 14.Each Y electrode pattern 14 separates the interval of regulation on X1-X2 direction and connects multiple wide cut electrode section 14a is set.
As shown in Figure 1, in overlooking, the wide cut electrode section 13a being configured to X electrode pattern 13 is not overlapping with the wide cut electrode section 14a of Y electrode pattern 14.
Electrically connect wiring pattern 16 in the end of the Y2 side of each X electrode pattern 13, also electrically connected to wiring pattern 16 in the X1 side of each Y electrode pattern 14 or the end of X2 side.These wiring patterns 16 are formed on the same base material 20 of formation electrode pattern 13,14.Each wiring pattern 16 in edge part region 12 by winding.
Be provided with the join domain 17 of outstanding shape in the Y2 side of input area 11, each wiring pattern 16 is by the surperficial 17a of winding to above-mentioned join domain 17.In above-mentioned join domain 17, the front end of each wiring pattern 16 forms the electrode pad 18 of wide cut, and each electrode pad 18 separates predetermined distance and arranges and be formed as row on X1-X2 direction.Above-mentioned join domain 17 is formed at the prolongation towards Y2 direction of the base material 20 forming electrode pattern 13,14.
Electrostatic transducer is formed by above X electrode pattern 13, Y electrode pattern 14 and wiring pattern 16.
Then, limit illustrates structure and the manufacturing process of the wiring pattern 16 of electrostatic transducer with reference to Fig. 2 A ~ Fig. 2 D limit.Fig. 2 A ~ Fig. 2 D is the profile of the manufacturing process of the wiring pattern 16 of the electrostatic transducer representing embodiment.Fig. 2 A ~ Fig. 2 D be along Fig. 1 A-A line cut off and the partial magnified sectional view observed from the direction of arrow.Fig. 2 A is the profile of the state representing stacked transparent electrode layer 31, articulamentum 32, conductive layer 33, protective layer 34 and resist 40 on base material 20; Fig. 2 B is the profile representing the state to have carried out metal etch from the state of Fig. 2 A after; Fig. 2 C is the profile representing the state to have carried out ITO etching from the state of Fig. 2 B after, and Fig. 2 D is the profile representing the state having peeled off resist 40 from the state of Fig. 2 C.
As shown in Figure 2 D, wiring pattern 16 by the transparent electrode layer 31 be formed on base material 20, the articulamentum 32 be formed on transparent electrode layer 31, be formed in the conductive layer 33 on articulamentum 32 and the protective layer 34 be formed on conductive layer 33 is formed.
Transparent electrode layer 31 is made up of the transparent conductive material of ITO etc., and is formed continuously with X electrode pattern 13 or Y electrode pattern 14.
Articulamentum 32, conductive layer 33 and protective layer 34 are formed by conductive material, and at least conductive layer 33 is made up of the conductive material that resistance is lower than transparent electrode layer 31.
Articulamentum 32 and protective layer 34 are made up of the alloy material of the electric conductivity containing copper and mickel respectively.Conductive layer 33 is made up of than articulamentum 32 and the high metal material of protective layer 34 containing ratio of copper, such as, be only made up of copper.Transparent electrode layer 31, articulamentum 32, conductive layer 33 and protective layer 34 are by sputtering or evaporation and other PVD (Physical vapor deposition: physical vapour deposition (PVD)) method, CVD (Chemical vapor deposition: chemical vapour deposition (CVD)) method film forming.
The Film Thickness Ratio protective layer 34 of articulamentum 32 is thick, for more than 2 times of thickness of protective layer 34 be preferred.Further, the thickness of conductive layer 33 is formed as larger than the thickness of articulamentum 32 and protective layer 34.Battery effect in being etched by ITO, articulamentum 32 and conductive layer 33 and protective layer 34 are etched with refinement.Therefore, preferably, be the mode determination conductive layer 33 of more than 100% of the etch rate of the conductive layer 33 that with reference to thickness and the thickness of protective layer 34 with reference to the etch rate of the protective layer 34 of thickness.
Thickness due to articulamentum 32 is greater than protective layer 34, and the mode that the etch rate that it is therefore preferable that the articulamentum 32 that with reference to thickness is less than 90% of the etch rate of the conductive layer 33 that with reference to thickness sets the thickness of articulamentum 32.
The containing ratio forming the nickel contained by alloy monolithic of articulamentum 32 preferably, than the nickel containing ratio large (amount is many) contained by the alloy monolithic forming protective layer 34.Such as, preferably, the containing ratio of the nickel contained by articulamentum 32 is more than 15wt and below 50wt%, and the containing ratio of the nickel contained by protective layer 34 is more than 0.1wt and is less than 15wt%.
Here, if the alloy of copper and mickel, then the concentration of nickel is higher, and the etch rate of battery effect when etching based on ITO is slower.That is, the concentration of nickel is lower, and etching is more quickly in progress, and etch quantitative change is large.Further, if the alloy of copper monomer and copper and mickel, then the etch rate of copper monomer one side is lower, and etching is more quickly in progress.
Resist 40 is formed with the pattern corresponding with wiring pattern on protective layer 34 by serigraphy, photoetching process etc.Resist 40 is selected according to the etching liquid used in metal etch operation and ITO etching procedure.
Countermeasure that is above-mentioned, that make the thickness of articulamentum 32 be greater than the thickness of protective layer 34 and the countermeasure making the amount of the nickel in articulamentum 32 be greater than protective layer 34 only can set one; but preferably, consider articulamentum 32, conductive layer 33 and protective layer 34 etch rate etc. and will both interrelated settings.
In the Resist patterns formation process shown in Fig. 2 A; first; prepare the duplexer whole of prescribed limit by sputtering etc. on the surperficial 20a of base material 20 defining successively transparent electrode layer 31, articulamentum 32, conductive layer 33 and protective layer 34; then, the protective layer 34 of the superiors is formed the resist 40 of the pattern corresponding with wiring pattern 16.The formation of resist 40 lithographically waits and carries out.
In the metal etch operation shown in Fig. 2 B, etch by the duplexer defining resist 40 in Resist patterns formation process being flooded in etching liquid the stipulated time.Fig. 2 B represents the state after metal etch operation, the residual scope corresponding with the pattern of resist 40 and articulamentum 32, conductive layer 33 and protective layer 34 being removed by etching liquid etch.
In the ITO etching procedure shown in Fig. 2 C, etch by the duplexer that have passed through metal etch operation being flooded in etching liquid the stipulated time.
Fig. 2 C represents the state after metal etch operation, the residual scope corresponding with the pattern of resist 40 and transparent electrode layer 31, articulamentum 32, conductive layer 33 and protective layer 34 being removed by etching liquid etch.
In the stripping process shown in Fig. 2 D, the resist 40 that have passed through in the duplexer of ITO etching is peeled off from protective layer 34.Peel through in stripper duplexer being immersed in and only making resist 40 dissolve and carry out.By above operation, the wiring pattern 16 of desired pattern is formed on the surperficial 20a of base material 20.
Ensuing effect (1) ~ (4) can be obtained according to the wiring pattern 16 of above formation.
(1) articulamentum 32, conductive layer 33, the protective layer 34 that stacked resistance is lower on transparent electrode layer 31 is passed through; particularly define the low conductive layer of impedance 33; the wiring impedance of wiring pattern 16 can be reduced, and the difference of the wiring impedance caused by the difference of the length of each wiring pattern 16 can be reduced further.
(2) by arranging the articulamentum 32 be made up of the alloy material comprising copper and mickel between transparent electrode layer 31 and conductive layer 33, low-impedance conductive layer 33 can be made reliably to fix relative to transparent electrode layer 31.
(3) by arranging protective layer 34 on conductive layer 33, conductive layer 33 in etching procedure can be prevented to be etched from above.
(4) according to during metal etch and ITO etching time battery effect, articulamentum 32, conductive layer 33, protective layer 34 by from sidepiece etch, but by making the thickness of conductive layer 33 be greater than protective layer 34, can prevent the mode of protective layer 34 to side with eaves outstanding.Further, by making the thickness of protective layer 34 identical with articulamentum 32 or for below it, making the amount of the nickel of protective layer 34 be less than articulamentum 32, protective layer 34 also can be prevented outstanding significantly to side compared with conductive layer 33.
Thereby, it is possible in etching procedure, stripping process or prevent protective layer 34 from peeling off afterwards, and can prevent the protective layer after peeling off from making short circuit between wiring pattern.
Further, the amount of etching of transparent electrode layer 31 and articulamentum 32 is less, can suppress their refinement, therefore, it is possible to reliably maintain the stationary state of articulamentum 32 and transparent electrode layer 31, can prevent wiring pattern 16 from peeling off from base material 20.
Below, embodiment and comparative example are described.
< embodiment 1 >
In embodiment 1, wiring pattern 16 is defined under the following conditions.In embodiment 1, compared with protective layer 34, the containing ratio of the nickel of articulamentum 32 is higher, and the thickness of articulamentum 32 is 4 times of the thickness of protective layer 34.
Base material 20: PETG, thickness 100 μm
Transparent electrode layer 31:ITO, thickness 25nm
Articulamentum 32:CuNi, the containing ratio 25% of thickness 40nm, Ni
Conductive layer 33:Cu, thickness 120nm
Protective layer 34:CuNi, the containing ratio 15% of thickness 10nm, Ni
Resist 40: use novolac resin
(a) metal etch operation
Etching liquid: sulfuric acid based etching liquid or ferric chloride in aqueous solution
Etch period: about 1 ~ 3 point
Temperature: normal temperature
(b) ITO etching procedure
Etching liquid: the mixed liquor of sulfonitric or salt acids etching liquid
Etch period: about 1 ~ 3 point
Temperature: normal temperature
(c) stripping process
Stripper: NMP (METHYLPYRROLIDONE)
Fig. 3 A is the top view photograph of the wiring pattern of embodiment 1, represents the state after stripping process.
Known as shown in Figure 3A, the wiring pattern 16 after stripping process is in overlooking, and the end of visible articulamentum 32 in the outside of protective layer 34, protective layer 34 conductive layer 33, articulamentum 32 and the transparent electrode layer 31 following relative to it is not given prominence to eaves shape.
< embodiment 2 >
In example 2, wiring pattern 16 is defined under the following conditions.In embodiment 2, the nickel containing ratio of articulamentum 32 and protective layer 34 is identical, and articulamentum 32 is identical with embodiment 1 with the relation of the thickness of protective layer 34.
Articulamentum 32:CuNi, the containing ratio 15% of thickness 40nm, Ni
Base material 20, transparent electrode layer 31, conductive layer 33, protective layer 34, resist 40 employ the material identical with embodiment 1.
The manufacturing condition of Resist patterns formation process, metal etch operation, ITO etching procedure and stripping process is identical with embodiment 1.
Fig. 3 B is the top view photograph of the wiring pattern of embodiment 2, represents the state after ITO etching procedure.Further, Fig. 3 B amplifies with the multiplying power identical with Fig. 3 A and represents a wiring pattern 16.
Known as shown in Figure 3 B, the wiring pattern 16 after stripping process is in overlooking, and the end of visible articulamentum 32 in the outside of protective layer 34, protective layer 34 conductive layer 33, articulamentum 32 and the transparent electrode layer 31 following relative to it is not given prominence to eaves shape.
Further, embodiment 2 is compared with embodiment 1, and wiring attenuates about 1 ~ 2um, and transparent electrode layer 31 and the jump of articulamentum 32 diminish about 1 ~ 2um.
< comparative example 1 >
Fig. 4 A ~ Fig. 4 D is the profile of the manufacturing process of the wiring pattern 116 of the electrostatic transducer representing comparative example 1.
As shown in Fig. 4 A ~ Fig. 4 D, wiring pattern 116 by the transparent electrode layer 131 be formed on base material 120, the articulamentum 132 be formed on transparent electrode layer 131, be formed in the conductive layer 133 on articulamentum 132 and the protective layer 134 be formed on conductive layer 133 is formed.Base material 120, transparent electrode layer 131, articulamentum 132, conductive layer 133 and protective layer 134 except the condition of the following stated, by the base material 20 of above-mentioned embodiment, transparent electrode layer 31,32, the material that uses in conductive layer 33 and protective layer 34 forms respectively.And, the manufacture of wiring pattern 116 is identical with above-mentioned embodiment, and by performing Resist patterns formation process (Fig. 4 A) successively, metal etch operation (Fig. 4 B), ITO etching procedure (Fig. 4 C), stripping process (Fig. 4 D) carry out.
In comparative example 1, define wiring pattern 116 under the following conditions.In comparative example 1, the nickel containing ratio of articulamentum 132 and protective layer 134 is identical, and the thickness of protective layer 134 is 2 times of the thickness of articulamentum 132.
Articulamentum 132:CuNi, the containing ratio 25% of thickness 15nm, Ni
Protective layer 134:CuNi, the containing ratio 25% of thickness 30nm, Ni
Base material 120, transparent electrode layer 131, conductive layer 133, resist 140 employ and the base material 20 of embodiment 1, transparent electrode layer 31, conductive layer 33, material that resist 40 is identical respectively.
The manufacturing condition of Resist patterns formation process, metal etch operation, ITO etching procedure and stripping process is identical with embodiment 1.
Fig. 5 is the top view photograph of the wiring pattern of comparative example 1, represents the state after stripping process.As shown in Fig. 5 (Fig. 4 D); wiring pattern 116 after stripping process is in overlooking; conductive layer 133, articulamentum 132 and transparent electrode layer 131 that the edge part 134a of protective layer 134 is following relative to it are given prominence to eaves shape, there occurs crackle 134b at the boundary position at outstanding position.
With reference to above-mentioned embodiment, the utility model is illustrated, but the utility model is not limited to above-mentioned embodiment, can carries out improveing or changing in the object of improvement or the scope of thought of the present utility model.
Utilizability in industry
As mentioned above, electrostatic transducer of the present utility model is useful for the input unit of touch panel and other electrostatic capacitive.
Claims (16)
1. an electrostatic transducer, the wiring pattern being formed with electrode pattern on the surface of base material and being electrically connected with above-mentioned electrode pattern, is characterized in that,
Above-mentioned wiring pattern at least possesses:
Transparent electrode layer, is formed on above-mentioned base material;
Articulamentum, is formed on above-mentioned transparent electrode layer, comprises copper and mickel;
Conductive layer, is formed on above-mentioned articulamentum, and the containing ratio of copper is than above-mentioned connection floor height; And
Protective layer, is formed on above-mentioned conductive layer, comprises copper and mickel,
Above-mentioned articulamentum than above-mentioned protection thickness,
The containing ratio of the nickel in above-mentioned protective layer is larger than the containing ratio of the nickel in above-mentioned conductive layer,
Above-mentioned conductive layer is than above-mentioned protection thickness.
2. electrostatic transducer as claimed in claim 1, is characterized in that,
The thickness of above-mentioned articulamentum is more than 2 times of the thickness of above-mentioned protective layer.
3. electrostatic transducer as claimed in claim 1 or 2, is characterized in that,
The containing ratio of the nickel in above-mentioned articulamentum is larger than the containing ratio of the nickel in above-mentioned protective layer.
4. electrostatic transducer as claimed in claim 3, is characterized in that,
The resistance of above-mentioned conductive layer is lower than above-mentioned transparency conducting layer.
5. electrostatic transducer as claimed in claim 3, is characterized in that,
The resistance of above-mentioned articulamentum, above-mentioned conductive layer, above-mentioned protective layer is lower than above-mentioned transparency conducting layer.
6. electrostatic transducer as claimed in claim 1 or 2, is characterized in that,
Above-mentioned conductive layer is copper Cu.
7. electrostatic transducer as claimed in claim 3, is characterized in that,
Above-mentioned conductive layer is copper Cu.
8. electrostatic transducer as claimed in claim 1 or 2, is characterized in that,
Above-mentioned transparent electrode layer is tin indium oxide ITO.
9. electrostatic transducer as claimed in claim 3, is characterized in that,
Above-mentioned transparent electrode layer is tin indium oxide ITO.
10. electrostatic transducer as claimed in claim 6, is characterized in that,
Above-mentioned transparent electrode layer is tin indium oxide ITO.
11. electrostatic transducers as claimed in claim 7, is characterized in that,
Above-mentioned transparent electrode layer is tin indium oxide ITO.
12. 1 kinds of electrostatic transducers, the wiring pattern being formed with electrode pattern on the surface of base material and being electrically connected with above-mentioned electrode pattern, is characterized in that,
Above-mentioned wiring pattern at least possesses:
Transparent electrode layer, is formed on above-mentioned base material;
Articulamentum, is formed on above-mentioned transparent electrode layer, comprises copper and mickel;
Conductive layer, is formed on above-mentioned articulamentum, and the containing ratio of copper is than above-mentioned connection floor height; And
Protective layer, is formed on above-mentioned conductive layer, comprises copper and mickel,
The containing ratio of the nickel in above-mentioned articulamentum is larger than the containing ratio of the nickel comprised in above-mentioned protective layer,
The containing ratio of the nickel in above-mentioned protective layer is larger than the containing ratio of the nickel in above-mentioned conductive layer,
Above-mentioned conductive layer is than above-mentioned protection thickness.
13. electrostatic transducers as claimed in claim 12, is characterized in that,
The resistance of above-mentioned conductive layer is lower than above-mentioned transparency conducting layer.
14. electrostatic transducers as claimed in claim 12, is characterized in that,
The resistance of above-mentioned articulamentum, above-mentioned conductive layer, above-mentioned protective layer is lower than above-mentioned transparency conducting layer.
15. electrostatic transducers as claimed in claim 12, is characterized in that,
Above-mentioned conductive layer is copper Cu.
16. electrostatic transducers as described in claim 12 or 15, is characterized in that,
Above-mentioned transparent electrode layer is tin indium oxide ITO.
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| JP2013253955A JP5917480B2 (en) | 2013-12-09 | 2013-12-09 | Electrostatic sensor |
| JP2013-253955 | 2013-12-09 |
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| JP (1) | JP5917480B2 (en) |
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| TWI740970B (en) * | 2016-07-12 | 2021-10-01 | 日商住友金屬礦山股份有限公司 | Laminated body substrate, conductive substrate, manufacturing method of laminated body substrate, and conductive substrate manufacturing method |
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| JP6531596B2 (en) * | 2015-09-28 | 2019-06-19 | 住友金属鉱山株式会社 | Laminate substrate, conductive substrate, method of producing laminate substrate, method of producing conductive substrate |
| US20240047694A1 (en) * | 2021-01-20 | 2024-02-08 | Tdk Corporation | Layered body, negative electrode current collector for lithium ion secondary battery, and negative electrode for lithium ion secondary battery |
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| JP4934456B2 (en) * | 2006-02-20 | 2012-05-16 | 古河電気工業株式会社 | Plating material and electric / electronic component using the plating material |
| KR101161239B1 (en) * | 2010-03-25 | 2012-07-02 | 박준영 | Pad for touch panel and touch panel using the same |
| CN102870072B (en) * | 2010-07-14 | 2015-03-25 | 阿尔卑斯电气株式会社 | Input device and method for manufacturing same |
| JP5473990B2 (en) * | 2011-06-17 | 2014-04-16 | 日東電工株式会社 | A conductive laminate, a transparent conductive laminate with a patterned wiring, and an optical device. |
| TWI537400B (en) * | 2011-12-06 | 2016-06-11 | 神戶製鋼所股份有限公司 | Cu alloy interconnection film for touch-panel sensor and method of manufacturing the interconnection film, touch-panel sensor, and sputtering target |
| JP5846953B2 (en) | 2012-02-15 | 2016-01-20 | アルプス電気株式会社 | Input device and manufacturing method thereof |
| JP5364186B2 (en) * | 2012-02-27 | 2013-12-11 | 積水ナノコートテクノロジー株式会社 | Conductive film with metal layer, method for producing the same, and touch panel containing the same |
| JP5918614B2 (en) * | 2012-04-24 | 2016-05-18 | グンゼ株式会社 | Conductive substrate, touch panel, and method of manufacturing conductive substrate |
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| JP2015114690A (en) | 2015-06-22 |
| KR20150067028A (en) | 2015-06-17 |
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| KR101642600B1 (en) | 2016-07-25 |
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Address after: Tokyo, Japan, Japan Patentee after: Alpine Alpine Company Address before: Tokyo, Japan, Japan Patentee before: Alps Electric Co., Ltd. |