CN204289475U - The bevelled many son knot compound photovoltaic cell of a kind of tool - Google Patents
The bevelled many son knot compound photovoltaic cell of a kind of tool Download PDFInfo
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- CN204289475U CN204289475U CN201420586089.XU CN201420586089U CN204289475U CN 204289475 U CN204289475 U CN 204289475U CN 201420586089 U CN201420586089 U CN 201420586089U CN 204289475 U CN204289475 U CN 204289475U
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- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
Abstract
The utility model relates to the bevelled many son knot compound photovoltaic cell of a kind of tool, is specially tool bevelled InAlAsP/InGaAs/Ge tri-knot compound photovoltaic cell; This three sons knot compound photovoltaic cell has continuous print second order bulge-structure, comprise the protruding second-order with comprising inclined-plane in bevelled first rank of tool protruding, first rank inclination angle of inclined plane that is protruding and second-order projection is 45-60 degree, grow this battery according to formal dress, then the inclination angle of inclined plane of the first rank projection is greater than the inclination angle of inclined plane of the first rank projection; Grow this battery according to upside-down mounting, then the inclination angle of inclined plane of the first rank projection is less than the inclination angle of inclined plane of the first rank projection, and this three sons knot, III-V compounds of group photovoltaic cell has effective confinement effect to available light and can improve preparation quality.
Description
Technical field
The utility model relates to a kind of compound photovoltaic cell, and excellent its relates to the bevelled many son knot compound photovoltaic cell of a kind of tool.
Background technology
III-V compounds of group photovoltaic cell is used in space field at first, but along with the progress of Ji Intraoperative, III-V compounds of group photovoltaic cell also more and more applies to non-space field.Compared with Silicon photrouics, III-V compounds of group photovoltaic cell has larger energy conversion efficiency, and III-V its opto-electronic conversion of compounds of group photovoltaic cell produced by advanced technologies becomes efficiency can more than 25%, and Silicon photrouics can not more than 20%.Compared to Silicon photrouics, III-V compounds of group photovoltaic cell is changed to the maximization realizing many solar radiations by using multiple sub-battery with different band-gap energy.
For III-V compounds of group photovoltaic cell, GaInP/GaAs/Ge is the most typical a kind of III-V the most ripe compounds of group photovoltaic cell, its density of photocurrent can reach 25mA/cm2, but existing III-V compounds of group photovoltaic cell is also insufficient to the spectral absorption of natural sunlight, and be mostly to be successively extended in Semiconductor substrate with the formation of vertical, many knots, often can not form flocked surface light to confinement effect as Silicon photrouics, existing III-V compounds of group photovoltaic cell has further lifting to be obtained.
Utility model content
In order to make up the deficiency of existing III-V compounds of group photovoltaic cell, further raising is to the utilance of light, the utility model provides a kind of InAlAsP/IGaAs/Ge tri-to tie compound photovoltaic cell, this InAlAsP/InGaAs/Ge tri-junction structure can improve the conversion efficiency of photovoltaic cell effectively, this InAlAsP/IGaAs/Ge tri-knot compound photovoltaic cell also has second order bulge-structure light to confinement effect simultaneously, the inclined-plane of bulge-structure after optimizing of this second order can improve light contact area effectively, can confinement effect efficiently be produced to light and improve preparation quality.
Many son knots III-V compounds of group photovoltaic cell that the utility model provides, comprises Ge substrate; Ge battery, is positioned on Ge substrate; The sub-battery of InGaAs, is positioned on Ge battery; The sub-battery of InAlAsP, is positioned on the sub-battery of InGaAs; The back surface field layer on n++ Ge contact layer and n++ Ge contact layer is comprised between described Ge substrate and Ge battery; The sub-battery of InAlAsP is Window layer, Window layer is p++ contact layer; Ge battery and the sub-battery of InGaAs, have the n++/p++ tunneling diode of Lattice Matching before the sub-battery of InGaAs and the sub-battery of InAlAsP.
Described many son knot compound photovoltaic cell have the inclined-plane of inclination; Described photovoltaic cell top plane of illumination shape is continuous print second order bulge-structure, and each second order bulge-structure has the first rank projection and second-order projection, and wherein second-order projection raises up from the upper surface of the first rank projection; The inclined-plane that first rank projection and second-order projection have inclination is, and the inclination angle on this inclined-plane is 48-65 degree; Ge battery away from the direction of substrate comprising successively n Ge base, p+ Ge emitter region, and there is the band gap of about 0.66ev; The sub-battery of described InGaAs away from substrate direction comprising successively n InGaAs base, p+ InGaAs emitter region, and there is the band gap of about 1.40ev; The institute's InAlAsP that tells sub-battery away from substrate direction comprising successively n InAlAsP base, p+ InAlAsP emitter region, and the band gap with about 1.90ev.
Further, the bottom thickness from the end face of second-order projection to Ge substrate is 300 ~ 400um, and the thickness of protruding bottom surface to the first rank, top of the first rank projection is 50 ~ 80um; And the top of second-order projection is at least greater than the twice of top thickness of protruding bottom surface to the first rank of the first rank projection to the thickness at the top of the first rank projection; Interval between every two second order bulge-structures is less than the thickness of protruding bottom surface to the first rank, top of the first rank projection.
Further, the n++/p++ tunnel-through diode of described Lattice Matching is heterojunction tunnel-through diode.
Further, the n++/p++ tunnel-through diode of described Lattice Matching is n++ InGaP/p++ InGaAsP heterojunction tunnel-through diode; Its gross thickness is 30-45 nanometer.
Further, the n++/p++ tunnel-through diode of described Lattice Matching is n++ InGaP/p++ InGaAsP heterojunction tunnel-through diode; Its gross thickness is 30-45 nanometer.
Further, grow this battery according to formal dress, then the inclination angle, side on the first rank projection (b) is greater than the inclination angle, side on the first rank projection (b); Grow this battery according to upside-down mounting, then the inclination angle, side on the first rank projection (b) is less than the inclination angle, side on the first rank projection (b).
Accompanying drawing explanation
Fig. 1 is the structural representation according to three son knot compound photovoltaic cell of the present utility model;
Fig. 2 is the enlarged drawing of a-quadrant in Fig. 1, i.e. the utility model photovoltaic cell each son knot material layer schematic diagram;
Fig. 3 is the comparative example of the utility model photovoltaic cell, has the projection of vertical stratification.
Embodiment
Be described further the utility model below with reference to preferred forms, the beneficial effects of the utility model will become clear in describing in detail.
See the structural representation that Fig. 1-3, Fig. 1 is the sub-junction photovoltaic battery of the utility model three, Fig. 2 is the enlarged drawing of a-quadrant in Fig. 1, which show the details of the utility model photovoltaic cell, an aspect of the present utility model, there is see Fig. 2 compound photovoltaic cell of the present utility model the InAlAsP/InGaAs/Ge structure of many son knots, wherein the band gap of the sub-battery of InAlAsP (300) is at about 1.9ev, the band gap of the sub-battery of InGaAs (200) is at about 1.40ev, the band gap of Ge battery (100) is about 0.66ev, optimizing structure of the band gap that three junction photovoltaic batteries of the present utility model have can mate the wavelength structure of nature solar spectrum, make full use of the photon energy of each wavelength period of photovoltaic, optimize the absorption to solar spectrum on the whole, improve battery efficiency.And, see Fig. 1, compound photovoltaic cell top of the present utility model plane of illumination shape is continuous print second order bulge-structure (a, b), each second order bulge-structure (a, b) have the first rank projection (b) and second-order projection (a), wherein second-order projection (a) raises up from the upper surface on the first rank projection (b).Specifically, compound photovoltaic cell of the present utility model comprises and has continuous print second order bulge-structure (a, b) Ge substrate (001), wherein each second order bulge-structure (a, b) comprise the first rank projection (b) and second-order projection (a), wherein second-order projection (a) raises up from the upper surface on the first rank projection (b).Be positioned on Ge substrate (001) and be followed successively by Ge battery (100), the sub-battery of InGaAs (200), the sub-battery of InAlAsP (300) to form three junction batteries of 1.90ev/1.40ev/0.66ev band structure.Wherein the band gap of each sub-battery is progressively increasing away from the direction of substrate, this is extremely conducive to the raising of density of photocurrent, wherein Ge battery (100) have about 0.66ev band gap and away from the direction of substrate being followed successively by n Ge base (101), p+ Ge emitter region (102), n Ge base (101) thickness is preferably 2.5 microns, and p+ Ge emitter region (102) thickness is preferably 80-100 nanometer; The sub-battery of InGaAs (200) has the band gap of about 1.40ev, and away from the direction of substrate being followed successively by n InGaAs base (201), p+ InGaAs emitter region (202), the thickness of n InGaAs base (201) is preferably 2.2 microns, and the thickness of p+ InGaAs emitter region (202) is preferably 80-100 nanometer; The sub-battery of InAlAsP (300) has the band gap of about 1.90ev, and away from the direction of substrate being followed successively by n InAlAsP base (301), p+ InAlAsp emitter region (302), the thickness of n InAlAsP base (301) is preferably 1.8-2.0 micron, and the thickness of p+ InAlAsp emitter region (302) is preferably 80-100 nanometer.N++ Ge contact layer (002) and back surface field layer (003) is also comprised between Ge substrate (001) and n Ge base (101); Upper at the sub-battery of InAlAsP (300) is Window layer (006), Window layer (006) is upper is p++ contact layer (007), is less than the little sub-battery away from plane of illumination of energy gap in the utility model for the sub-battery being optimized for the large close plane of illumination of energy gap of each sub-battery base thickness; Specifically, be exactly the thickness that thickness is less than the thickness of n InGaAs base (201), the thickness of n InGaAs base (201) is less than n Ge base (101) of n InAlAsP base (301), be conducive to the maximum using to natural photovoltaic spectrum like this.
There is the n++/p++ tunnel-through diode (004,005) of Lattice Matching between each sub-battery layers; can with in the multi-junction photovoltaic battery of system at this InAlAsP/InGaAs/Ge, the n++/p++ tunnel-through diode of Lattice Matching needs to select heterojunction structure, this is conducive to provide potential barrier between high knot, tunnel-through diode (005) particularly between the sub-battery of InAlAsP and InGaAs, in our experiment, observe this by son diffusion few between the sub-battery of the InAlAsP on upper strata (300) and minimizing knot, favourable effect is played to light, we used n++ InGaP/p++ InGaAsP heterojunction tunnel-through diode in an experiment, this improves the photoelectric current efficiency of battery to the full extent, certainly as epitaxially grown many knots III-V race's photovoltaic cell, the thickness of tunnel-through diode is very important and responsive, when selecting n++ InGaP/p++ InGaAsP heterojunction tunnel-through diode as tunnel-through diode (005) between the sub-battery of body series multi-junction photovoltaic battery InAlAsP and InGaAs, the gross thickness of n++ InGaP/p++ InGaAsP heterojunction tunnel-through diode (005) of optimum experimental is 30-45 nanometer.
Next the second order bulge-structure of the utility model InAlAsP/InGaAs/Ge tri-junction photovoltaic battery will be introduced.First the second order bulge-structure (a, b) of the utility model InAlAsP/InGaAs/Ge tri-junction photovoltaic battery is based upon on the Ge substrate of second order bulge-structure, and each sub-battery and other functional layers are covered on this Ge substrate successively.
It is important to note that the side of the first rank projection (b) in second order bulge-structure of the present utility model and second-order projection (a) is inclined-plane B, A; The object of such setting be due to:
First rank projection (b1) of second order bulge-structure as shown in Figure 3 and second-order projection (a1) are vertical substantially, confinement effect can be formed by the maximized sunlight to being irradiated to battery surface like this, such as, when incident ray is irradiated to photovoltaic cell surface at a certain angle, first a part is absorbed on the surface of second-order bulge-structure (a1) by battery, the unabsorbed part being irradiated to the second bulge-structure (a1) side reflexes to the surface of the first rank projection (b1) and is absorbed by the first rank projection (b1), and can not reflexed on the battery surface between second order projection cube structure (a1) by a light part for the first rank projection cube structure (b1) Surface absorption.Thus and thus, make originally to utilize the light being irradiated to battery upper surface, tightly the light being irradiated to upper surface can not be utilized by second order bulge-structure, can also utilize by the reflection of side the light being irradiated to side more, this part light is exactly the additional light rays increased, in a way, this structure has carried out the utilization of architecture light, therefore can reach maximized utilization to solar incident ray.Even more noteworthy, the light reflected from the battery surface between second order projection cube structure again can the surface of directive first rank projection cube structure and/or the surface of second-order projection cube structure, photovoltaic light like this is maximized ground confinement on the surface of photovoltaic cell with second order projection cube structure, and the utilization of battery to sunray is greatly improved.
From above-mentioned analysis, the utilization of bulge-structure to sunlight with vertical side is optimized, but, formed in practical cell process, formed by epitaxy technology, epitaxy technology is undesirable often to the deposition of vertical side, during such as, active layer for each battery of extension, can form stress at knuckle place C to concentrate, this can have a strong impact on cell integrated performance; Meanwhile, often there will be uneven thickness in the outer time delay of vertical side, the phenomenon even locally do not deposited, this is also the restriction factor affecting battery performance, and epitaxy technology has good deposition quality to smooth surface.
Based on above-mentioned consideration, the side arranging the first rank projection (b) in second order bulge-structure of the present utility model and second-order projection (a) is inclined-plane B, A; The inclination angle on this inclined-plane, the angle namely between inclined-plane and horizontal plane is 48-65 degree, and it is balance the relation between light utilization and epitaxial deposition quality that inclination angle so is arranged, and makes the balance between favourable factor and restriction factor to obtain best effect; Further, the inclination angle, side on the first rank projection (b) can be different from the inclination angle, side of second-order projection (b), grow this battery more specifically according to formal dress, then the inclination angle, side on the first rank projection (b) is greater than the inclination angle, side on the first rank projection (b); Grow this battery according to upside-down mounting, then the inclination angle, side on the first rank projection (b) is less than the inclination angle, side on the first rank projection (b), this be adjust the distance inclined-plane deposition quality far away due to epitaxial deposition can be lower.
For this second order bulge-structure other parameters arrange as follows: the bottom thickness d1 from the end face of second-order projection (b) to Ge substrate is about 300-400um, the top on the first rank projection (b) is preferably 50 ~ 80um to the bottom surface d2 on the first rank projection (b), and namely the height d2 on the first rank projection (b) is 50 ~ 80um; The top of second-order projection (a) to the first rank projection (a) top between thickness d 3 be at least greater than the twice of the height d2 on the first rank projection (b), be preferably 150 ~ 200um, namely the height d3 of second-order projection (a) is preferably 150 ~ 200um; Interval between every two second order bulge-structures is less than the height on the first rank projection (b); The width of each second order bulge-structure is preferably 150 ~ 200um.Limit neck effect more can be optimized, if the interval that the height of second-order projection is less than between the height of the first rank projection or second order bulge-structure too mostly can not be played confinement effect to sunray or can greatly slacken confinement effect by above-mentioned parameter.
By the description of above-mentioned specific embodiment, disclose design of the present utility model very all sidedly, those skilled in the art should understand advantage part of the present utility model; Understanding for the application should not limit in the above-described embodiments, and the execution mode of the obvious distortion consistent with the utility model spirit also should belong to design of the present utility model.
Claims (8)
1. the bevelled many son knot compound photovoltaic cell of tool, comprise Ge battery, the sub-battery of InGaAs, the sub-battery of InAlAsP, it is characterized in that described many son knot compound photovoltaic cell have the inclined-plane of inclination.
2. the bevelled many son knot compound photovoltaic cell of tool as claimed in claim 1, this many son knot compound photovoltaic cell specifically comprises: Ge substrate; Ge battery, is positioned on Ge substrate; The sub-battery of InGaAs, is positioned on Ge battery; The sub-battery of InAlAsP, is positioned on the sub-battery of InGaAs; The back surface field layer on n++Ge contact layer and n++Ge contact layer is comprised between described Ge substrate and Ge battery; The sub-battery of InAlAsP is Window layer, Window layer is p++ contact layer; Ge battery and the sub-battery of InGaAs, have the n++/p++ tunneling diode of Lattice Matching before the sub-battery of InGaAs and the sub-battery of InAlAsP.
3. the bevelled many son knot compound photovoltaic cell of the tool as described in any one of claim 1 or 2, described photovoltaic cell top plane of illumination shape is continuous print second order bulge-structure, each second order bulge-structure has the first rank projection and second-order projection, and wherein second-order projection raises up from the upper surface of the first rank projection.
4. the bevelled many son knot compound photovoltaic cell of tool as claimed in claim 3, the inclined-plane of described inclination is the inclined-plane of the first rank projection and second-order projection, and the inclination angle on this inclined-plane is 48-65 degree.
5. the bevelled many son knot compound photovoltaic cell of the tool as described in any one of claim 2 or 4, described Ge battery is away from the direction of substrate comprising successively n Ge base, p+Ge emitter region, and the band gap with about 0.66ev; The sub-battery of described InGaAs is away from substrate direction comprising successively n InGaAs base, p+InGaAs emitter region, and the band gap with about 1.40ev; The institute's InAlAsP that tells sub-battery away from substrate direction comprising successively n InAlAsP base, p+InAlAsP emitter region, and the band gap with about 1.90ev.
6. the bevelled many son knot compound photovoltaic cell of photovoltaic tool as claimed in claim 4, the bottom thickness from the end face of second-order projection to Ge substrate is 300 ~ 400um, and the thickness of protruding bottom surface to the first rank, top of the first rank projection is 50 ~ 80um; And the top of second-order projection is at least greater than the twice of top thickness of protruding bottom surface to the first rank of the first rank projection to the thickness at the top of the first rank projection; Interval between every two second order bulge-structures is less than the thickness of protruding bottom surface to the first rank, top of the first rank projection.
7. the bevelled many son knot compound photovoltaic photovoltaic cells of tool as claimed in claim 2, the n++/p++ tunnel-through diode of described Lattice Matching is heterojunction tunnel-through diode.
8. the bevelled many son knot compound photovoltaic photovoltaic cells of tool as claimed in claim 7, the n++/p++ tunnel-through diode of described Lattice Matching is n++InGaP/p++InGaAsP heterojunction tunnel-through diode; Its gross thickness is 30-45 nanometer.
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| Application Number | Priority Date | Filing Date | Title |
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| CN201420586089.XU CN204289475U (en) | 2014-10-11 | 2014-10-11 | The bevelled many son knot compound photovoltaic cell of a kind of tool |
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| CN201420586089.XU CN204289475U (en) | 2014-10-11 | 2014-10-11 | The bevelled many son knot compound photovoltaic cell of a kind of tool |
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