CN204281852U - A kind of use in magnetron sputtering coating negative electrode - Google Patents
A kind of use in magnetron sputtering coating negative electrode Download PDFInfo
- Publication number
- CN204281852U CN204281852U CN201420801801.3U CN201420801801U CN204281852U CN 204281852 U CN204281852 U CN 204281852U CN 201420801801 U CN201420801801 U CN 201420801801U CN 204281852 U CN204281852 U CN 204281852U
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- Prior art keywords
- target
- negative electrode
- vacuum chamber
- magnetron sputtering
- target stand
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Abstract
The utility model discloses a kind of use in magnetron sputtering coating negative electrode, be arranged in magnetron sputtering plating vacuum chamber, comprise the target stand be arranged on vacuum chamber sidewall, be located at the target backboard in target stand front, be installed in the magnet in target stand inner chamber, be welded on the target in target backboard front, negative electrode also comprises for preventing the sealing mechanism leaked between target stand and vacuum chamber sidewall, sealing mechanism comprises the multiple sealing members being located at the target stand back side, one end is installed in the locking lever at the target stand back side, the other end of locking lever is also arranged with set nut, locking lever axially wears successively along it and passes through sealing member, lock with locking screw parent phase after vacuum chamber sidewall, locking lever is quantitatively equal with sealing member, stopping property between target stand and vacuum chamber sidewall is ensure that by arranging sealing mechanism, reduce the leak rate in vacuum chamber, improve sputtering yield, target is fixed on target backboard by the mode of simultaneously being welded by solder, simplify the mechanism of negative electrode, improve the quality of plated film.
Description
Technical field
the utility model relates to a kind of magnetic control sputtering film plating device, is specifically related to a kind of use in magnetron sputtering coating negative electrode.
Background technology
at present, to flaky material, as glass substrate carry out plated film time, usual employing be the mode of magnetron sputtering plating, its principle of work is: in vacuum condition, electronics flies to substrate under electric field action, collides in the process with intert-gas atoms, intert-gas atoms is ionized and produces rare gas element positive ion and new electronics; Rare gas element positive ion accelerates to fly to negative electrode under electric field action, and with high-energy bombardment target surface, target is sputtered, and the target atom sputtered or molecule deposition form film on substrate.In whole magnetron sputtering process, require to keep in plated film vacuum chamber certain vacuum tightness to stablize with the plated film rete guaranteed magnetron sputtering and obtain, and at present, general arrange between target stand with vacuum chamber sidewall cover whole target stand sealing member to guarantee to seal setting mutually between the two, because sealing area span is comparatively large, higher to the trim flatness requirement on target stand.And simultaneously, traditional fixing target mainly adopts direct hexagon socket head cap screw etc. to be fixed on target backboard by pressure target bar by target, this mode makes the thickness of target be restricted usually, can not lower than certain certain value; On the other hand, owing to adopting hexagon socket head cap screw to fix target by pressure target bar, press target strip material also together can be sputtered and deposit on substrate during sputtering, make the rete that substrate sputters be introduced into impurity, reduction plate purity and the quality of film; In addition, sputtering material also can deposit near bolt hole and bolt hole is blocked, and causes target when changing target to be difficult to take off.
Utility model content
the purpose of this utility model is to provide a kind of use in magnetron sputtering coating negative electrode, its structure is simple, good seal performance, to plate the quality of film good.
for achieving the above object, the technical solution adopted in the utility model is: a kind of use in magnetron sputtering coating negative electrode, be arranged in magnetron sputtering plating vacuum chamber, comprise the target stand be arranged on described vacuum chamber sidewall, be located at the target backboard in described target stand front, be installed in the magnet in described target stand inner chamber, be welded on the target in described target backboard front, described negative electrode also comprises for preventing the sealing mechanism leaked between described target stand and described vacuum chamber sidewall, described sealing mechanism comprises the multiple sealing members being located at the described target stand back side, one end is installed in the locking lever at the described target stand back side, the other end of described locking lever is also arranged with set nut, described locking lever axially wears by described sealing member along it successively, lock with described locking screw parent phase after described vacuum chamber sidewall, described locking lever is quantitatively equal with described sealing member.
preferably, described sealing member has two, is located at the two ends up and down at the described target stand back side respectively.
preferably, described sealing mechanism also comprises insulating mat, the metal gasket of being located at described vacuum chamber side-wall outer side successively, and described locking lever axially wears by locking with described locking screw parent phase after described sealing member, described vacuum chamber sidewall, described insulating mat, described metal gasket successively along it.
preferably, the front of described target backboard is also coated with the solder for welding described target, and described solder is for containing indium solder.
preferably, described target backboard is copper backboard.
preferably, described target is ITO target.
preferably, described sealing member have employed insulating material and makes.
further preferably, the sealing-ring sealed for both is also provided with between described target stand and described target backboard.
due to the utilization of technique scheme, the utility model compared with prior art has following advantages: use in magnetron sputtering coating negative electrode of the present utility model, better tightness between target stand and plated film vacuum chamber sidewall is made by arranging sealing mechanism, sealing member is set respectively at upper and lower two ends, the target stand back side and effectively decreases sealing area between the two, reduce the leak rate of vacuum chamber indoor, improve the sputtering yield of target stand, adopt solder weldering earthing mode that target is fixed on target backboard simultaneously, not only simplify cathode construction, avoid in coating process and introduce impurity, ensure that the quality of plated film simultaneously.
Accompanying drawing explanation
accompanying drawing 1 is the structural representation figure of use in magnetron sputtering coating negative electrode described in the utility model;
accompanying drawing 2 is the sectional view of the use in magnetron sputtering coating negative electrode shown in Fig. 1;
wherein: 1, vacuum chamber sidewall; 2, target stand; 3, target backboard; 4, magnet; 5, target; 6, sealing mechanism; 61, sealing member; 62, locking lever; 63, set nut; 64, insulating mat; 65, metal gasket; 7, solder; 8, sealing-ring.
Embodiment
below in conjunction with accompanying drawing, the technical solution of the utility model is further elaborated.
shown in Fig. 1, Fig. 2, a kind of use in magnetron sputtering coating negative electrode, be arranged in magnetron sputtering plating vacuum chamber, comprise the target stand 2 be arranged on vacuum chamber sidewall 1, be located at the target backboard 3 in target stand 2 front, the magnet 4 be installed in target stand 2 inner chamber, be welded on the target 5 in target backboard 3 front, in the present embodiment, target 5 is the ITO target 5 of rectangle plane, and this target 5 is connected with the negative pole of direct supply.In the present embodiment, target backboard 3 have employed the good copper backboard of thermal conductivity, and magnet 4 is permanent magnet.
shown in Figure 2, this negative electrode also comprises for preventing the sealing mechanism 6 leaked between target stand 2 and vacuum chamber sidewall 1, sealing mechanism 6 comprises the locking lever that multiple sealing members 61, one end of being located at target stand 2 back side are installed in target stand 2 back side, the other end of locking lever 62 is arranged with set nut 63, locking lever 62 axially wears by locking with set nut 63 phase after sealing member 61, vacuum chamber sidewall 1 successively along it, and locking lever 62 is quantitatively equal with sealing member 61.In the present embodiment, the seal 61 has two, lay respectively at the two ends up and down at target stand 2 back side, by arranging two sealing members 61, not only ensure the sealing between target stand 2 and vacuum chamber sidewall 1, also effectively decrease the sealing area between target stand 2 and vacuum chamber sidewall 1, solve between the two because sealing area is excessive, target stand 2 back side unfairness and the leakage problem caused, in the present embodiment, the seal 61 have employed insulating material and makes.
shown in Figure 2, sealing mechanism 6 also comprises insulating mat 64, the metal gasket 65 be located at successively outside vacuum chamber sidewall 1, locking lever 62 axially wears by locking with set nut 63 phase after sealing member 61, vacuum chamber sidewall 1, insulating mat 64, metal gasket 65 along it successively, by arranging insulating mat 64, metal gasket 65, can more effectively target stand 2 and vacuum chamber sidewall 1 phase be locked.
in prior art, adopt bolt to fix target 5, cause and introduce impurity in coating process, thus affect coating effects, occur with the phenomenon blocking bolt hole to prevent sputtering material from depositing near bolt hole simultaneously, in the present embodiment, have employed welding process is fixed on target backboard 3 by target 5, particularly, one deck is smeared containing indium solder 7 in target backboard 3 front, then target 5 is fixed on target backboard 3, in sputter procedure, because the temperature in vacuum chamber is higher, solder 7 can be melted thus target 5 and target backboard 3 are combined more securely.By the method that solder 7 welds, simplify the structure of negative electrode, institute's quality of film plating layer on more convenient, substrate is installed also better simultaneously.
in order to prevent leaking between target backboard 3 and target stand 2, being also provided with sealing-ring 8 between, effectively both being sealed setting mutually, sealing circle 8 can be rubber ring.
in sum, use in magnetron sputtering coating negative electrode of the present utility model, by arranging sealing mechanism, namely sealing member is set at the target stand back side, setting axially can wear the locking lever by sealing member and vacuum chamber sidewall, be set in the set nut of locking lever one end, setting is sealed mutually by between target stand with vacuum chamber sidewall, by arranging multiple sealing member, effectively reduce the sealing surface area between target stand and vacuum chamber sidewall, ensure that in coating process, stopping property in vacuum chamber, solve the gas leakage situation between the two caused because sealing area is excessive in prior art, simultaneously, need the target stand back side to have higher planarization problem because sealing area is excessive.By the mode of welding, target is fixed on target backboard simultaneously, effectively simplifies the structure of negative electrode, ensure that the quality of plated film simultaneously.
above-described embodiment, only for technical conceive of the present utility model and feature are described, its object is to person skilled in the art can be understood content of the present utility model and implement according to this, can not limit protection domain of the present utility model with this.All equivalences done according to the utility model spirit change or modify, and all should be encompassed within protection domain of the present utility model.
Claims (8)
1. a use in magnetron sputtering coating negative electrode, be arranged in magnetron sputtering plating vacuum chamber, it is characterized in that: comprise the target stand be arranged on described vacuum chamber sidewall, be located at the target backboard in described target stand front, be installed in the magnet in described target stand inner chamber, be welded on the target in described target backboard front, described negative electrode also comprises for preventing the sealing mechanism leaked between described target stand and described vacuum chamber sidewall, described sealing mechanism comprises the multiple sealing members being located at the described target stand back side, one end is installed in the locking lever at the described target stand back side, the other end of described locking lever is also arranged with set nut, described locking lever axially wears by described sealing member along it successively, lock with described locking screw parent phase after described vacuum chamber sidewall, described locking lever is quantitatively equal with described sealing member.
2. use in magnetron sputtering coating negative electrode according to claim 1, is characterized in that: described sealing member has two, is located at the two ends up and down at the described target stand back side respectively.
3. use in magnetron sputtering coating negative electrode according to claim 1, it is characterized in that: described sealing mechanism also comprises insulating mat, the metal gasket of being located at described vacuum chamber side-wall outer side successively, described locking lever axially wears by locking with described locking screw parent phase after described sealing member, described vacuum chamber sidewall, described insulating mat, described metal gasket successively along it.
4. use in magnetron sputtering coating negative electrode according to claim 1, is characterized in that: the front of described target backboard is also coated with the solder for welding described target, and described solder is for containing indium solder.
5. use in magnetron sputtering coating negative electrode according to claim 1, is characterized in that: described target backboard is copper backboard.
6. use in magnetron sputtering coating negative electrode according to claim 1, is characterized in that: described target is ITO target.
7. use in magnetron sputtering coating negative electrode according to claim 1, is characterized in that: described sealing member have employed insulating material and makes.
8., according to the arbitrary described use in magnetron sputtering coating negative electrode of claim 1 to 7, it is characterized in that: between described target stand and described target backboard, be also provided with the sealing-ring sealed for both.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201420801801.3U CN204281852U (en) | 2014-12-16 | 2014-12-16 | A kind of use in magnetron sputtering coating negative electrode |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201420801801.3U CN204281852U (en) | 2014-12-16 | 2014-12-16 | A kind of use in magnetron sputtering coating negative electrode |
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| Publication Number | Publication Date |
|---|---|
| CN204281852U true CN204281852U (en) | 2015-04-22 |
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| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201420801801.3U Expired - Fee Related CN204281852U (en) | 2014-12-16 | 2014-12-16 | A kind of use in magnetron sputtering coating negative electrode |
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| Country | Link |
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| CN (1) | CN204281852U (en) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN104532198A (en) * | 2014-12-16 | 2015-04-22 | 张家港市铭斯特光电科技有限公司 | Cathode for magnetron sputtering coating |
-
2014
- 2014-12-16 CN CN201420801801.3U patent/CN204281852U/en not_active Expired - Fee Related
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN104532198A (en) * | 2014-12-16 | 2015-04-22 | 张家港市铭斯特光电科技有限公司 | Cathode for magnetron sputtering coating |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| C14 | Grant of patent or utility model | ||
| GR01 | Patent grant | ||
| CF01 | Termination of patent right due to non-payment of annual fee |
Granted publication date: 20150422 Termination date: 20171216 |
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| CF01 | Termination of patent right due to non-payment of annual fee |