CN202148349U - Cathode for magnetron sputtering - Google Patents
Cathode for magnetron sputtering Download PDFInfo
- Publication number
- CN202148349U CN202148349U CN201120040063U CN201120040063U CN202148349U CN 202148349 U CN202148349 U CN 202148349U CN 201120040063 U CN201120040063 U CN 201120040063U CN 201120040063 U CN201120040063 U CN 201120040063U CN 202148349 U CN202148349 U CN 202148349U
- Authority
- CN
- China
- Prior art keywords
- yoke
- target
- backboard
- magnetron sputtering
- soft iron
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Fee Related
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Abstract
The utility model relates to magnetron sputtering coating devices, in particular to a cathode for magnetron sputtering, which comprises a magnet yoke, a soft iron, a magnetic, a back plate and target materials, wherein the soft iron is located in the magnet yoke and connected with the magnet yoke. The magnet is also located in the magnet yoke and connected with the soft iron. A through hole is arranged on the magnet yoke edge in the vertical direction, a screwed hole corresponding to the through hole is arranged at the edge portion of the back plate, and the back plate is connected with the magnet yoke through bolts. The bottom surface of the back plate is connected with the target materials, and the screwed holes on the back plate are shielded by the target materials. The cathode for magnetron sputtering adopts the bolts to replace target pressing strips or special fixtures and tensioning adjustment mechanisms so as to simplify inner structures of the cathode, effectively lower coating cost, and simultaneously can prevent impurities from being brought in during coating.
Description
Technical field
The utility model relates to a kind of magnetic control sputtering film plating device, relates more specifically to a kind of magnetron sputtering and uses negative electrode.
Background technology
Magnetron sputtering is a kind of plated film mode that is widely used in fields such as machinery, electronics, semi-conductor; Its principle of work is: electronics flies to substrate under electric field action; In this process, bump, make intert-gas atoms ionization produce rare gas element positive ion and new electronics with intert-gas atoms; The rare gas element positive ion quickens to fly to negative electrode under electric field action, and with high-energy bombardment target surface, makes target generation sputter, and target atom that sputters or molecule deposition form film on substrate.The new electronics that produces is under electric field and the action of a magnetic field; Move in a circle on the target surface with approximate cycloid form; These electronic motion paths are not only very long; And be bound near continuing the collision intert-gas atoms in the plasma body zone on target surface, the new rare gas element positive ion that produces constantly bombards target, thereby has improved sedimentation rate.
In traditional magnetic control sputtering device, fixedly target mainly contains two kinds of methods:
1. first method is directly through pressing the target bar target to be fixed on (as shown in Figure 2) on the yoke with hexagon socket head cap screw etc., and this mode makes the thickness of target be restricted usually, can not be lower than certain certain value; On the other hand owing to adopt hexagon socket head cap screw through pressing fixedly target of target bar, press during sputter the target strip material also can be together by sputter and deposit on the substrate, the rete that makes substrate attend institute's sputter is introduced into impurity, the purity and the quality of the reduction film that plates; In addition, sputtering material stops up screw near also can depositing to screw, and target is difficult to take off when causing the replacing target.
Second method is to adopt unit clamp; For example use that " [" shaped clamp is fixed on (as shown in Figure 3) on the yoke with backboard; Adopt this mode to seem simply, but to " material of [" shaped clamp and working ability require high, need to use the high mangaenese steel casting; Complicate fabrication process, cost height, domestic production and the processing technology ability that does not also possess this type of material at present.In addition, " [" causes the anchor clamps distortion easily and target come off if the tensioning of shaped clamp adjusting is improper in employing.Usually need complicated tensioning regulating mechanism be installed in negative electrode inside, but thus, relevant cost can increase further again.
The utility model content
For solving the problems of the technologies described above, the utility model proposes following solution:
Plant magnetron sputtering and use negative electrode, comprise yoke, soft iron, magnet, backboard and target.Wherein, soft iron is positioned at yoke, is connected with yoke, and magnet also is positioned at yoke, is connected with soft iron; Have through hole on the yoke edge vertical direction, back plate edges partly has the threaded hole corresponding with said through hole, and backboard is connected through bolt with yoke; The backboard bottom surface is connected with target; Target covers the threaded hole on the backboard.
Preferably, said threaded hole does not run through backboard.
Preferably, said backboard bottom surface is connected through welding process with target.
Preferably, adopt sealing-ring and stainless steel China ink to seal between said yoke and the backboard with graphite film.
The beneficial effect of the utility model is:
(1) adopts bolt to connect backboard and replace pressing target bar or unit clamp, simplify cathode construction greatly;
(2) target can effectively cover fixed position (the utility model is a bolt), guarantees that whole sputter face is target, has avoided introducing in the coating process impurity;
(3) can design the size and the thickness of target easily according to actual needs, especially can significantly reduce target thickness, reduce target input and coating cost.
Description of drawings
Fig. 1: the structural representation of the utility model.
Fig. 2: use bolt target to be fixed to the structural representation of the negative electrode of yoke in the prior art through pressing the target bar.
Fig. 3: " [" shaped clamp is fixed to backboard the structural representation of the negative electrode of yoke in use in the prior art.
Reference numeral:
1. target
2. magnet
3. soft iron
4. yoke
5. press the target bar
6. backboard
7. " [" shaped clamp
8. tensioning regulating mechanism
9. bolt
10. sealing-ring
11. stainless steel China ink and graphite film
12. sealed strip
13. tensioning set screw
14. substrate
Embodiment
In the embodiment of the utility model as shown in Figure 1, magnetron sputtering comprises yoke 4, magnet 2, soft iron 3, backboard 6 and target 1 with negative electrode.Wherein, soft iron 3 is positioned at yoke 4, is connected with yoke 4, and magnet 2 also is positioned at yoke 4, is connected with soft iron 3; Have through hole on the yoke 4 edge vertical directions, backboard 6 surrounding edge branches have the threaded hole corresponding with the through hole of yoke 4, and backboard 6 is threaded with yoke 4 through bolt 9; Backboard 6 bottom surfaces are connected with target 1; Target 1 with cover the threaded hole on the backboard 6 after backboard 6 bottom surfaces are connected.
One preferred embodiment in, the threaded hole of backboard 6 does not run through backboard 6; Another preferred embodiment in, the bottom surface of backboard 6 and target 1 are connected through welding process.
In the above embodiment, all adopt sealing-ring 10 and stainless steel China ink to seal between yoke 4 and the backboard 6 with graphite film 11.
With sealed strip 12 cathode construction that target 1 is fixed to yoke 4 is compared through pressing target bar 5 with direct use bolt 9 shown in Figure 2, introduced impurity when the cathode construction of the utility model can effectively be avoided plated film; " [" shaped clamp 7 cooperates substrate 14, tensioning regulating mechanism 8 and tensioning set screw 13 that the cathode construction that target 1 is fixed to yoke 4 is compared with use shown in Figure 3; The utility model adopts bolt 9 to replace material and the high special-purpose high mangaenese steel of processing request are cast " [" the shaped clamp 7 that forms; Can significantly simplify the internal structure of negative electrode, thereby reduce coating cost.
Claims (4)
1. a magnetron sputtering is used negative electrode, comprises yoke, soft iron, magnet, backboard and target, wherein; Soft iron is positioned at yoke, is connected with yoke, and magnet also is positioned at yoke; Be connected with soft iron, it is characterized in that, have through hole on the yoke edge vertical direction; Back plate edges partly has the threaded hole corresponding with said through hole, and backboard is connected through bolt with yoke; The backboard bottom surface is connected with target; Target covers the threaded hole on the backboard.
2. magnetron sputtering according to claim 1 is used negative electrode, it is characterized in that, said threaded hole does not run through backboard.
3. magnetron sputtering according to claim 1 is used negative electrode, it is characterized in that, said backboard bottom surface is connected through welding process with target.
4. use negative electrode according to the described magnetron sputtering of arbitrary claim in the claim 1~3, it is characterized in that, adopt sealing-ring and stainless steel China ink to seal between said yoke and the backboard with graphite film.
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
CN201120040063U CN202148349U (en) | 2011-02-17 | 2011-02-17 | Cathode for magnetron sputtering |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
CN201120040063U CN202148349U (en) | 2011-02-17 | 2011-02-17 | Cathode for magnetron sputtering |
Publications (1)
Publication Number | Publication Date |
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CN202148349U true CN202148349U (en) | 2012-02-22 |
Family
ID=45589415
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
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CN201120040063U Expired - Fee Related CN202148349U (en) | 2011-02-17 | 2011-02-17 | Cathode for magnetron sputtering |
Country Status (1)
Country | Link |
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CN (1) | CN202148349U (en) |
Cited By (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN103060766A (en) * | 2013-01-30 | 2013-04-24 | 安徽省蚌埠华益导电膜玻璃有限公司 | Sealing structure of magnetron sputtering cathode target material |
CN105632855A (en) * | 2014-10-28 | 2016-06-01 | 北京北方微电子基地设备工艺研究中心有限责任公司 | Magnetron and magnetron sputtering equipment |
CN112739848A (en) * | 2018-09-27 | 2021-04-30 | 株式会社爱发科 | Magnet unit for magnetron sputtering device |
-
2011
- 2011-02-17 CN CN201120040063U patent/CN202148349U/en not_active Expired - Fee Related
Cited By (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN103060766A (en) * | 2013-01-30 | 2013-04-24 | 安徽省蚌埠华益导电膜玻璃有限公司 | Sealing structure of magnetron sputtering cathode target material |
CN105632855A (en) * | 2014-10-28 | 2016-06-01 | 北京北方微电子基地设备工艺研究中心有限责任公司 | Magnetron and magnetron sputtering equipment |
CN105632855B (en) * | 2014-10-28 | 2018-05-25 | 北京北方华创微电子装备有限公司 | A kind of magnetron and semiconductor processing equipment |
CN112739848A (en) * | 2018-09-27 | 2021-04-30 | 株式会社爱发科 | Magnet unit for magnetron sputtering device |
CN112739848B (en) * | 2018-09-27 | 2023-03-24 | 株式会社爱发科 | Magnet unit for magnetron sputtering device |
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Legal Events
Date | Code | Title | Description |
---|---|---|---|
C14 | Grant of patent or utility model | ||
GR01 | Patent grant | ||
DD01 | Delivery of document by public notice |
Addressee: Shanghai Dehua Electromechanical Technology Co.,Ltd. Document name: Notification of Termination of Patent Right |
|
C17 | Cessation of patent right | ||
CF01 | Termination of patent right due to non-payment of annual fee |
Granted publication date: 20120222 Termination date: 20130217 |