CN204203972U - A kind of self-desttruction equipment of electronic equipment - Google Patents
A kind of self-desttruction equipment of electronic equipment Download PDFInfo
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- CN204203972U CN204203972U CN201420626478.0U CN201420626478U CN204203972U CN 204203972 U CN204203972 U CN 204203972U CN 201420626478 U CN201420626478 U CN 201420626478U CN 204203972 U CN204203972 U CN 204203972U
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Abstract
The utility model discloses a kind of self-desttruction equipment of electronic equipment, it comprises: self-destruction flip flop equipment, and it is arranged on the housing of electronic equipment, for illegally opened at the housing of electronic equipment or broken shell time, trigger a self-destruction signal, and exported to self-destruction actuating unit; Self-destruction actuating unit, it, after the described self-destruction signal that described self-destruction flip flop equipment exports being detected, utilizes high voltage pulse to carry out physical damage to the pin-saving chip of described electronic equipment and/or data storage medium; Battery power supply system: for powering for electronic equipment and described self-desttruction equipment.
Description
Technical field
The utility model relates to device security technical field, particularly relates to a kind of self-desttruction equipment of electronic equipment.
Background technology
The current world has stepped into the information age completely, in information data widely used today, mobile device (mobile phone, dull and stereotyped waiting data storage device) significant data in storage medium divulges a secret the potential important threat of of becoming data security, these equipment often there is individual privacy information, company trade secret, even government bodies' file, military project secret waits significant data, once lose or the stolen risk that will face significant data and divulged a secret, significant data will be exposed in face of the person of stealing secret information completely, even if equipment is provided with any high level fail-safe software, be provided with such as many complicated system passwords, the protection such as security password, the person of stealing secret information possibly cannot steal data from mobile device Peripheral Interface, but internal data store medium carries out direct physical and cracks after also difficulty prevents the person of stealing secret information from opening shell to equipment, easy to doly steal significant data, to bring about great losses.
For preventing the person of stealing secret information by after opening shell to equipment, to pin-saving chip or the storage medium (as FLASH chip, inner TF card etc.) of inside, utilize high-tech instrument, means crack, it is utilize pick-up unit that existing conventional security takes precautions against way, detecting data faces when giving away secrets risk (the general equal internal battery of mobile device), startup internal security software is wiped significant data or is formatd by equipment, by to the labor of the method and demonstration, the main technological deficiency existed is as follows:
1. speed is slow, dependence is strong: automatically start fail-safe software at equipment, order and to wipe by turn significant data or format, need to consume the plenty of time, and data volume is larger, the time consumed will be longer, the person of stealing secret information, after opening shell, cuts off the internal electric source of mobile device in time, can not wipe completely or format significant data.And carry out wiping or format need of work and rely on CPU or other parts have come, crash at mobile device or data self-destruction work may be caused to complete under off-mode.
2. level of security is low: if adopt deletion or quick formatting method of operating to save time, professional still can utilize high-tech means to be decrypted internal storage medium, to repair, and the data deleted or format still have the possible risk be resumed to exist.
Utility model content
In view of this, the utility model proposes a kind of self-desttruction equipment of electronic equipment.
According to the utility model on the one hand, which provide a kind of self-desttruction equipment of electronic equipment, comprising:
Self-destruction flip flop equipment, it is arranged on the housing of electronic equipment, for illegally opened at the housing of electronic equipment or broken shell time, trigger a self-destruction signal, and exported to self-destruction actuating unit;
Self-destruction actuating unit, it, after the described self-destruction signal that described self-destruction flip flop equipment exports being detected, utilizes high voltage pulse to carry out physical damage to the pin-saving chip of described electronic equipment and/or data storage medium;
Battery power supply system: for powering for electronic equipment and described self-desttruction equipment.
Wherein, described self-destruction flip flop equipment comprises:
Be arranged at least one switch on casting of electronic device;
At least one switch described comprises: the upper and lower contact being arranged on described electronic equipment upper and lower casing relative position; When the upper and lower casing of described electronic equipment is in closure state, described upper and lower contact electrical contact, corresponding described switch is in closure state; When the upper and lower casing of described electronic equipment is separated, described upper and lower contact is in released state, and corresponding described switch is in off-state.
Wherein, described self-destruction flip flop equipment comprises the described switch of multiple series connection, and when one of them switch is in off-state, described self-destruction flip flop equipment triggers a self-destruction signal.
Wherein, described self-destruction flip flop equipment comprises the described switch of multiple parallel connection, and when all switches are all in off-state, described self-destruction flip flop equipment triggers a self-destruction signal.
Wherein, described self-destruction flip flop equipment comprises the Part I switch of multiple parallel connection and the Part II switch of multiple series connection; When all switches in Part I switch are in off-state, and when any one switch in Part II switch is in off-state, described self-destruction flip flop equipment triggers a self-destruction signal.
Wherein, multiple switch is separately positioned on the diverse location place of casting of electronic device.
Wherein, described multiple switch is separately positioned on four corners, the side of casting of electronic device, and/or pin-saving chip and/or storage medium position place.
Wherein, described self-destruction actuating unit comprises: detection module, boost module and pulse control module;
Described detection module receives self-destruction signal from described self-destruction flip flop equipment; Described detection module is also connected to battery power supply system, and for being communicated with or isolating described battery power supply system and boost module, pulse control module;
Described boost module, after being communicated with described battery power supply system, producing DC high voltage, and is exported to pulse control module;
Described pulse control module, after being communicated with described battery power supply system, after changing the DC high voltage received from described boost module into DC pulse voltage, exports pin-saving chip and/or the storage medium of electronic equipment to.
Wherein, described pick-up unit comprises:
11 resistance (R11), its first end is connected to node A, and the second end is connected to the supply voltage V that described battery power supply system provides
bATTERY;
12 resistance (R12), is connected between node A and Node B, wherein, and Node B ground connection; Wherein, node A and Node B are connected to two output terminals of described self-destruction trigger circuit;
11 triode (Q11), its base stage is connected to node A by the 13 resistance (R13); Its collector is connected to supply voltage V by the 14 resistance (R14)
bATTERY; Its emitter is connected to ground;
12 P channel MOS tube (M12), its G pin is connected to the collector of described 11 triode (Q11) by the 15 resistance (R15), and its S pin is connected to described supply voltage V
bATTERY; Its D pin is connected to the output terminal of detection module.
Wherein, described boost module comprises:
Filtering circuit, for filtering by the clutter in detection module input signal;
Booster circuit, comprising: energy storage inductor (L31) its first end is connected to the output terminal of filtering circuit, and the second end is connected to the output terminal of booster circuit by the 21 diode (D21); Boosting driving chip (U302), it is EUP2586 chip, and the VIN pin of this EUP2586 chip is connected to the first end of energy storage inductor (L31); SHDN pin is connected to the output terminal of filtering circuit by the 21 resistance (R21), and by the 23 electric capacity (C23) ground connection; SW pin is connected to the second end of energy storage inductor (L31); OVP pin is connected to the negative pole end of the 21 diode (D21); GND pin ground connection;
Negative voltage feedback network, for adjusting the amplitude of booster circuit output voltage, comprise: the 24 electric capacity (C24), its first end is connected to the FB pin of boosting driving chip (U302), and its second end is connected to the output terminal of booster circuit; 23 resistance (R23), itself and the 24 resistance (R24) are connected in series, its first end is connected to the output terminal of booster circuit, second end connects the 24 resistance (R24), is also connected to the FB pin of boosting driving chip (U302) by the 22 resistance (R22); 24 resistance (R24), itself and the 23 resistance (R23) are connected in series, and its first end is connected to second end of the 23 resistance R23, the second end ground connection;
Tank circuit, comprise the 25 electric capacity (C25) in parallel and the 26 electric capacity (C26), both first ends are connected to the output terminal of negative voltage feedback network, the second end ground connection.
Wherein, described pulse control module comprises:
Oscillatory circuit, it is for generation of oscillation pulse signal; Described oscillatory circuit comprises: the 31 not gate (NOT 31) and the 32 not gate (NOT 32); Wherein, 31 not gate (NOT31) and the 32 not gate (NOT 32) end to end, and the input end of the 31 not gate (NOT 31) is connected to the 32 electric capacity (C32) be connected with the output terminal of described 32 not gate (NOT 32) is connected by the 31 resistance (R31), its output terminal is connected to the output terminal of this oscillatory circuit, for exporting described oscillation pulse signal; The output terminal of the 31 not gate (NOT 31) is also connected to the first end of the 32 resistance, and the second end of the 32 resistance is connected between described 31 resistance and the 32 electric capacity;
Pulsed electron on-off circuit, comprise: multiple P channel MOS tube, the S pin of each P channel MOS tube is connected to the output terminal of boost module, and G pin is connected to the output terminal of boost module by resistance, and D pin is connected to different pieces of information storage chip and/or the storage medium of electronic equipment respectively;
31 triode (Q31), its base stage is connected to the output terminal of oscillatory circuit by the 33 resistance (R33), its grounded emitter, the G pin of each above-mentioned P channel MOS tube is connected to the collector of the 31 triode Q31 by resistance and diode.
Wherein, described battery power supply system, by arranging, at least retains the electric energy of preset ratio for described self-destruction executive circuit.
The self-desttruction equipment of the electronic equipment that the utility model proposes can solve technological deficiency of the prior art, design owing to adopting independent operating working method, with other modular circuit onrelevant in electronic equipment, duty will not affect by CPU in electronic equipment or other parts, avoid, because electronic equipment crashes, shuts down and cause self-desttruction equipment to lose efficacy, improving self-desttruction equipment reliability.
Accompanying drawing explanation
Fig. 1 shows the structural representation of the self-desttruction equipment of the electronic equipment shown in the utility model;
Fig. 2 shows the framed structure schematic diagram of self-destruction flip flop equipment in the utility model embodiment;
Fig. 3 shows the schematic equivalent circuit of self-destruction flip flop equipment in the utility model embodiment;
Fig. 4 shows a kind of circuit realiration structural representation of detection module in the utility model;
Fig. 5 shows a kind of circuit realiration structural drawing of boost module in the utility model;
Fig. 6 shows a kind of circuit realiration structural representation of pulse control circuit in the utility model.
Embodiment
For make the purpose of this utility model, technical scheme and advantage clearly bright from, below in conjunction with specific embodiment, and with reference to accompanying drawing, the utility model is described in further detail.
Fig. 1 shows the structural representation of the self-desttruction equipment of the electronic equipment shown in the utility model.As shown in Figure 1, described self-desttruction equipment comprises: self-destruction flip flop equipment 101, self-destruction actuating unit 102 and battery power supply system 103.Described battery power supply system is placed in electronic equipment internal.
Wherein, self-destruction flip flop equipment 101 detects data security risks for being responsible for, when electronic equipment suffer illegally to open shell, broken shell etc. there is the behavior of security risks time, described self-destruction flip flop equipment 101 by triggering one self-destruction signal, and is sent to self-destruction actuating unit 102.
Self-destruction actuating unit 102 is for responsible detection self-destruction signal, and after self-destruction signal being detected, physical damage is carried out to electronic equipment internal pin-saving chip and medium (as FLASH, TF card etc.), physical damage has rapidity and the unrepairable feature of corrupted data, significant data can be prevented to be read or to decipher, ensure the safety storing data to greatest extent.
Battery power supply system 103 provides electric energy for electronic equipment, provides electric energy for self-destruction actuating unit starts simultaneously; Particular by arranging battery management system; battery power supply system is made will at least to retain predetermined ratio if the electric energy of 10% is for self-desttruction equipment; and the electric energy electronic device of other electric energy as 90% uses when normal operation; it is for ensureing that self-destruction actuating unit all can normally start under free position, realizes self-destruction protection.
Alternatively, described electronic equipment can be mobile device, as mobile phone, panel computer etc. have the electronic equipment of data storage medium.
The detail of the electronic equipment self-desttruction equipment that the utility model proposes is introduced below in detail from the particular circuit configurations of above-mentioned three parts.
Fig. 2 shows the framed structure schematic diagram of self-destruction flip flop equipment in the utility model embodiment.As shown in Figure 2, described self-destruction flip flop equipment comprises: at least one switch being arranged on electronic equipment upper and lower casing relative position, and described upper and lower casing can be in and be separated and closed state; Wherein said switch is made up of two contacts, i.e. upper contact and lower contact, described upper contact is arranged on the upper shell of electronic equipment, lower contact is positioned at the lower house of described electronic equipment, when upper and lower casing is assembled into closure state, described upper and lower contact forms electrical contact, and then the switch that upper and lower contact is formed is in closure state; After upper-lower casing is separated, described upper and lower contact is in released state, makes described switch be in off-state.Described switch can comprise multiple, is arranged on the diverse location place of lower casing respectively.Described diverse location comprises four corners, side and pin-saving chips and/or the storage medium position place of casting of electronic device.
In embodiment shown in Fig. 2, A1 is the upper shell of electronic equipment, A2 is the lower house of electronic equipment, a is the upper contact loading upper shell, b is the lower contact loading lower house, upper contact a and lower contact b lays respectively at, relative position after lower casing assembling, when upper, lower house has assembled rear a contact and b contact will be in closed conducting state, common composition K switch 1, only have when shell or broken shell are opened in K switch 1 position of electronic equipment, the a of K switch 1, b two contact will be separated, K1 will be in off-state, four groups of these type of switches have been uniformly distributed in housing four corner location of electronic equipment.Certainly in other embodiments, quantity and the position of described switch are not limited thereto, and can arrange according to actual needs.
Fig. 3 shows the schematic equivalent circuit of self-destruction flip flop equipment in the utility model embodiment.As shown in Figure 3, be connected to self-destruction executive circuit after being arranged on the K switch 1 on mobile device upper-lower casing, K2, K3, K4 series connection, self-destruction executive circuit is made up of the state of switching circuitry 4 switches by detecting, as the foundation starting self-destroying function.
Under the state that mobile device shell is intact, K1, K2, K3, K4 are all in closed conducting state, and switching circuitry closes, and self-destruction actuating unit will be in holding state.When a corner any on mobile device shell takes the lead in illegally opening shell, all the switch causing this to open shell position is disconnected, trigger self-destruction actuating unit, start self-destruction immediately.Adopt this device greatly can reduce the possibility of artificial destruction self-desttruction equipment, improve the security of internal data, realize rapid reaction, omnibearing guarantee internal data safety.Certainly, in order to improve security, described switch can be arranged on four corners of mobile device incessantly, can also be arranged on the side edge of mobile device according to actual conditions.Alternatively, except this embodiment shown in Fig. 2, position that also can be residing in the electronic device according to electronic equipment casing shape and data storage medium, the housing of electronic equipment arranges the switch that multiple upper and lower contact is formed, these switches are made to form parallel circuit, and after detecting that all switches all disconnect, then produce a self-destruction trigger pip to triggering actuating unit.This is because, the special setting of some casting of electronic device, and the position residing for data storage medium determines, only after some position of housing is opened, just likely touch data storage medium, further to the decrypt data etc. on data storage medium, therefore this setup can prevent the upper-lower casing of certain position of electronic equipment unintentionally separated, but this separation is when cannot touch data storage medium, data in data storage medium are deleted by mistake, cause unnecessary loss.
In addition, it can also be Part I switch in parallel in multiple switch, be connected in series with Part II switch more afterwards, final formation switching circuitry, when disconnecting with any one switch in Part II switch all to disconnect at Part I switch, self-destruction flip flop equipment produces a self-destruction trigger pip to triggering actuating unit.This can be arranged according to concrete actual conditions.
The self-destruction principle of self-destruction actuating unit utilizes high voltage pulse to add to mobile device internal data store chip and medium pin, cause chip and media interior wafer, device burns, realize physical damage that is quick, irreversible, unrepairable, avoid inner loss of vital data, ensure the safety of data.
Described self-destruction actuating unit comprises: detection module, boost module and pulse control module.
Wherein, described detection module is connected with self-destruction flip flop equipment, and receives self-destruction trigger pip from described self-destruction flip flop equipment; Described detection module is also connected to battery power supply system 103, it is after receiving the self-destruction trigger pip of self-destruction flip flop equipment, be communicated with described battery power supply system 103 and boost module and pulse control circuit, make described battery power supply system 103 provide power supply for described boost module and pulse control circuit; Described battery power supply system 103, when self-destruction trigger pip not detected, is isolated with boost module and pulse control circuit, is stoped described battery power supply system 103 to be powered for boost module and pulse control circuit by described detection module.
Described boost module is connected to detection module, and after received the power supply that battery power supply system provides by detection module, for generation of high voltage storage chip and medium being caused to physical damage, and exports to pulse control module.
Described pulse control module receives the DC high voltage that described boost module exports, and after changing described DC high voltage into DC pulse voltage, adds to the pin of storage chip and medium, causes destructive burning to the wafer of their inside or device.
Wherein, described pulse control module comprises multiple output port, and each different output port is connected on the dissimilar data storage medium of electronic equipment respectively; As described in output port comprise Flash output port, for being connected to the Flash storage card of electronic equipment, TF card output port, is connected to the TF card etc. of electronic equipment.The advantage of high voltage pulse is adopted to be instantaneous power large (because output capacitance C25, the C26 by boost module provides by pulse power major part).Under being specially adapted to the occasion of multiple memory device, because each memory device electrical property there are differences, burn and must there is sequencing, the memory device burnt at first certainly will impact the memory device that other is burning, adopt high voltage pulse mode can greatly reduce this impact due to the feature that instantaneous power is large, self-destruction reliability is higher.
Fig. 4 shows a kind of circuit realiration structural representation of detection module in the utility model.As shown in Figure 4, described detection module comprises:
11 resistance R11, its first end is connected to node A, and the second end is connected to supply voltage V
bATTERY;
12 resistance R12, is connected between node A and Node B, wherein, and Node B ground connection;
11 electric capacity C11, is connected between node A and Node B;
11 triode Q11, its base stage is connected to node A by the 13 resistance R13; Its collector is connected to supply voltage V by the 14 resistance R14
bATTERY; Its emitter is connected to ground;
12 P channel MOS tube M12, is equivalent to an electronic switch, and its G pin (1 pin) is connected to the collector of the 11 triode Q11 by the 15 resistance R15, and its S pin (2 pin) is connected to power supply V
bATTERY; Its D pin (3 pin) is connected to the output terminal of detection module.Be connected to the power supply side of boost module and pulse control module.
Wherein, supply voltage V
bATTERYbe connected to the output terminal of battery power supply system; Node A and Node B are connected to two output terminals of self-destruction trigger circuit; The output terminal output voltage KILL_VDD of detection module.
Alternatively, the resistance of the 11 resistance R11 and the 12 resistance R12 is 200k Ω.The resistance of the 13 resistance R13 is 2.2k Ω.The resistance of the 14 resistance R14 and the 15 resistance R15 is respectively 47k Ω and 100k Ω.The capacitance of the 11 electric capacity C11 is 0.1 μ F.11 electric capacity C11 is used for filtering clutter undesired signal, and improve the accuracy of detection module, effectively avoid self-desttruction equipment misoperation, in some cases, the 11 electric capacity C11 can omit.
Under device housings serviceable condition, node A, B place switching circuitry closes, supply voltage V
bATTERYthrough the 11 resistance R11, node A and Node B to ground, the base stage of triode Q11 does not have inflow current and is in cut-off state, and its current collection level current potential will rise to supply voltage V
bATTERY, make voltage between the G pin (1 pin) of the 12 P channel MOS tube M12 and S pin (2 pin) be 0V.12 P channel MOS tube M12 is also in cut-off state, and the voltage KILL_VDD that detection module output terminal exports is 0V, and final boost module and pulse control module are closed without power supply.
Wreck at device housings, when the switching circuitry between node A, B disconnects, supply voltage V
bATTERYthe electric current produced is through the base stage of the 11 resistance R11 and the 13 resistance R13 to triode Q11, triode Q11 is in saturation conduction state, triode Q11 current collection level current potential will drop to 0V, make voltage difference between the G pin (1) of the 12 P channel MOS tube M12 and S pin (2 pin) equal supply voltage V
bATTERY, the 12 P channel MOS tube M12 will be in saturation conduction state, supply voltage V
bATTERYthrough the 12 P channel MOS tube M12 to detection module output terminal, output voltage KILL_VDD, thus provide power supply for boost module and pulse control module, start self-destruction.
Fig. 4 illustrate only a kind of circuit realiration figure of detection module; described detection module can also be realized by other circuit; as long as those skilled in the art complete the function of aforementioned detection module by usual circuit implementations, all within protection domain of the present utility model.
Fig. 5 shows a kind of circuit realiration structural drawing of boost module in the utility model.As shown in Figure 5, described boost module comprises:
Filtering circuit, for filtering by the clutter in detection module input signal, be made up of the 21 electric capacity C21 of parallel connection and the 22 electric capacity C22, both first ends are connected to the output terminal of detection module jointly, and the second end is connected to ground;
Booster circuit, it comprises energy storage inductor L31 and boosting driving chip U302; Wherein, the first end of described energy storage inductor L31 is connected to the output terminal of filtering circuit, and the second end is connected to the output terminal of booster circuit by the 21 diode D21; Described boosting driving chip U302 is EUP2586 chip, and the VIN pin 6 of this EUP2586 chip is connected to the first end of energy storage inductor L31; SHDN pin 4 is connected to the output terminal of filtering circuit by the 21 resistance R21, and by the 23 electric capacity C23 ground connection; SW pin one is connected to second end of energy storage inductor L31; OVP pin 5 is connected to the negative pole end of the 21 diode D21; GND pin two is connected to ground;
Negative voltage feedback network, for adjusting the amplitude of booster circuit output voltage, comprising: the 24 electric capacity C24, and its first end is connected to the FB pin 3 of boosting driving chip U302, and its second end is connected to the output terminal of boost module; 23 resistance R23, itself and the 24 resistance R24 are connected in series, and first end is connected to the output terminal of boost module, and the second end connects the 24 resistance R24, are also connected to the FB pin of boosting driving chip U302 by the 22 resistance R22; 24 resistance R24, itself and the 23 resistance R23 are connected in series, and first end is connected to second end of the 23 resistance R23, the second end ground connection;
Tank circuit, comprise the 25 electric capacity C25 in parallel and the 26 electric capacity C26, both first ends are connected to the output terminal of negative voltage feedback network, and the second end is connected to ground.
Wherein, EUP2586 is the important devices of this boost module circuit, it is the DC/DC converter of a built-in lower end MOS switch based on CMOS technology, the conducting resistance of its built-in lower end MOS switch is 0.3 (representative value), by being the electric current of 3A to the maximum, and there is the input of 2.6V ~ 5.5V Width funtion, 1MHz switching frequency, and the feature such as high-level efficiency electric energy conversion of more than 93% can be realized.Under the occasion of the multiple memory device of reply, replaceable more high-power DC/DC converter, when avoiding starting self-destroying function, emergent power is not enough and cause boost module output voltage to reduce rapidly, causes self-destruction baulk.
In negative voltage feedback network, 24 electric capacity C24 is building-out capacitor, 23 resistance R23 is the upper offset resistance of negative voltage feedback, 24 resistance R24 is the below-center offset resistance of negative voltage feedback, by regulating the resistance of upper offset resistance and below-center offset resistance, the amplitude of the output voltage of boost module can be regulated.
In this boost module, alternatively, the inductance value of described energy storage inductor L31 is that the capacitance of 10 μ H, the 25 electric capacity C25 and the 26 electric capacity C26 is respectively 10 μ F and 1 μ F.The capacitance of the 21 electric capacity C21 and the 22 electric capacity C22 is respectively 10 μ F and 0.1 μ F.The resistance of the 21 resistance R21 is 10k Ω, and the capacitance of the 23 electric capacity is 1 μ F.The capacitance of the 24 electric capacity C24 is 220pF.The resistance value of the 22 resistance R22 is 1.1k Ω.The resistance value of the 23 resistance is 750k Ω.The resistance value of the 24 resistance R24 is respectively 5.49k Ω.The capacitance of the 25 electric capacity C25 and the 26 electric capacity C26 is respectively 10 μ F and 1 μ F.
Below introduce the circuit working principle of this boost module: (boosting driving chip SW pin is connected to the D level of built-in metal-oxide-semiconductor at the built-in metal-oxide-semiconductor of boosting driving chip U302, GND pin is connected to the S level of built-in metal-oxide-semiconductor) conducting time, energy storage inductor L31 and this metal-oxide-semiconductor form loop, the electric current that supply voltage KILL-VDD is formed through described loop is converted into magnetic energy storage in energy storage inductor L31, when this metal-oxide-semiconductor turns off, magnetic energy in energy storage inductor L31 is converted into the two ends coating-forming voltage of electric energy at inductance, under above bearing just, this voltage superposition is at the anode of supply voltage KILL-VDD, total voltage after superposition stores via the 25 electric capacity C25 exported to after the 21 diode D21 in tank circuit and the 26 electric capacity C26, realize boost function.
Boost module Main Function is by the output voltage KILL-VDD (cell voltage of detection module, be about 3V ~ 4.2V) boost to KILL-27.5V high voltage, the operating voltage of existing storage chip and medium (as FLASH, TF card etc.) is generally 3V ~ 5V, maximal value also can not more than 10V, adopt the high voltage of 27.5V, be enough to cause destructive destruction to the wafer of they inside.When tackling special high pressure resistant memory device, can suitably improve this voltage according to memory device characteristic, ensureing the reliability of self-destroying function.
It is only a kind of circuit realiration structure of boost module that Fig. 5 shows.Those skilled in the art can, according to usual technological means, adopt other circuit structure to realize boost module; As long as technological means usual in employing this area realizes the circuit structure of aforementioned boost module function, all within protection domain of the present utility model.
Fig. 6 shows a kind of circuit realiration structural representation of pulse control circuit in the utility model.As shown in Figure 6, described pulse control circuit comprises:
Oscillatory circuit, it is for generation of oscillation pulse signal; Alternatively, the frequency of described oscillation pulse signal can be 2Hz, and pulsewidth can be the oscillation pulse signal of 250ms; Described oscillatory circuit comprises: the 31 not gate NOT the 31 and the 32 not gate NOT 32.Wherein, 31 not gate NOT31 and the 32 not gate NOT 32 is end to end, and the input end of the 31 not gate NOT 31 is connected to by the 31 resistance R31 the 32 electric capacity C32 be connected with the output terminal of described 32 not gate NOT 32 connects, its output terminal is connected to the output terminal of this oscillatory circuit, exports described oscillation pulse signal; The output terminal of the 31 not gate NOT 31 is also connected to the first end of the 32 resistance, and the second end of the 32 resistance is connected between described 31 resistance and the 32 electric capacity;
Pulsed electron on-off circuit, comprise: multiple P channel MOS tube, the S pin of each P channel MOS tube is connected to the output terminal of boost module, and G pin is connected to the output terminal of boost module by resistance, and D pin is connected to different pieces of information storage chip and/or the storage medium of electronic equipment respectively; The situation comprising two P channel MOS tubes has been shown in Fig. 6, be specially: the 32 P channel MOS tube M32, its S pin (2 pin) is connected to the output terminal of boost module, its G pin (1 pin) is connected to the output terminal of boost module by the 37 resistance R37, its D pin (3 pin) is connected to the FLASH chip of electronic equipment; 33 P channel MOS tube M33, its S pin (2 pin) is connected to the output terminal of boost module, its G pin (1 pin) is connected to the output terminal of boost module by the 36 resistance R36, its D pin (3 pin) is connected to the TF card of electronic equipment;
31 triode Q31, its base stage is connected to the output terminal of source oscillation signal by the 33 resistance R33, its emitter is connected to ground, the G pin of each above-mentioned P channel MOS tube is connected to the collector of the 31 triode Q31 by resistance and diode, the G pin (1 pin) as above-mentioned 32 P channel MOS tube M32 is connected to the collector of the 31 triode by the 35 resistance R35 and the 32 diode D32; The G pin (1 pin) of above-mentioned 33 P channel MOS tube M33 is connected to the collector of the 31 triode Q31 by the 34 resistance R34 and the 31 diode D31.
In the pulse control circuit shown in Fig. 6, input end (KILL-27.5V) is connected to the output terminal of boost module, the VCC pin of the 31 not gate NOT31 and the 32 not gate NOT32 is connected to the output terminal (KILL_VDD) of detection module, its output terminal (KILL-FLASH) is connected to the FLASH chip in electronic equipment, and KILL_TF is connected to the TF card in electronic equipment.Because the 31 not gate NOT31 and the 32 not gate NOT32 uses same VCC pin and GND pin on chip, as long as therefore connect described same pin when connecting circuit, therefore in Fig. 6, illustrate only the VCC pin of the 31 not gate NOT31 and the connected mode of GND pin.
Fig. 6 illustrate only the situation that electronic equipment comprises FLASH chip and TF card, namely illustrate only two pulsed electron on-off circuits for FLASH chip and TF card.Certainly, pulse control module of the present utility model can also comprise the pulsed electron on-off circuit for other storage chips and medium, the pulsed electron on-off circuit of FLASH or the TF card shown in its structure with Fig. 6 is identical, comprise P channel MOS tube M33, and be connected in parallel with other pulsed electron on-off circuit.
Wherein, it is 2Hz that source oscillation signal produces frequency, pulsewidth is the pulse signal of 250ms, the 31 triode Q31 is exported to by the 31 not gate NOT31, drive the 33 P channel MOS tube M33, the 32 P channel MOS tube M32 by the 31 triode Q31, be 2Hz at the D pin forming frequency of the 32 P channel MOS tube M32 and the 33 P channel MOS tube M33 simultaneously, and pulsewidth is 250ms, amplitude is the pulse voltage of 27.5V, adds to corresponding memory device respectively.31 not gate NOT31 and the 32 not gate NOT32 is positioned on same chip, and both VCC pins are connected to the output terminal of battery power supply system jointly, and GND pin is connected to ground jointly, no longer describes in detail herein.
32 resistance R32, the 32 electric capacity C32 determine the frequency of pulse signal source, 31 diode D31 and the 32 diode D32 plays buffer action, coordinate the 34 resistance R34, 35 resistance R35 isolates the 33 P channel MOS tube M33 jointly, the G level of the 32 P channel MOS tube M32, avoid M33 under extreme environment or condition, in M34, some metal-oxide-semiconductors damage (as G, S punctures) and have influence on the normal work of another one metal-oxide-semiconductor, make the 33 P channel MOS tube M33, 32 P channel MOS tube M32 duty is independent of each other, benefit to improve the data volume of self-destruction in this state, reduce the risk that significant data is read or deciphers to greatest extent.
Voltage KILL_Flash and KILL_TF that this pulse control circuit exports, all up to 27.5V, can cause physical damage to Flash chip and TF card respectively.It should be noted that, physical damage has rapidity and the unrepairable feature of corrupted data, and significant data can be prevented to be read or to decipher, and ensures the safety storing data to greatest extent.
It is only a kind of circuit realiration structure of pulse control module that Fig. 6 shows.Those skilled in the art can, according to usual technological means, adopt other circuit structure to realize pulse control module; As long as technological means usual in employing this area realizes the circuit structure of aforementioned boost module function, all within protection domain of the present utility model.
The self-desttruction equipment of the electronic equipment that the utility model proposes is mainly used in preventing other people when stealing data from mobile device Peripheral Interface, carries out physics crack mobile device after illegally opening shell to the memory device of inside.The utility model data self-desttruction equipment can effective protected data safety.Major advantage is as follows:
1. self-desttruction equipment possesses high accuracy, highly sensitive feature
Flip flop equipment employing in self-desttruction equipment such as 4 equivalent switch are evenly distributed on four corners of mobile device shell, when a corner any on mobile device shell takes the lead in illegally opening shell, all the switch causing this to open shell position is disconnected, trigger self-destruction actuating unit, start self-destruction immediately.Adopt this device greatly can reduce the possibility of artificial destruction self-desttruction equipment, improve the security of internal data, realize high accuracy, highly sensitive omnibearing guarantee internal data safety.
2. self-desttruction equipment has the feature of rapidity, no dependence
Because high voltage pulse has the characteristic of transient high power, within the scope of 1 ~ 2 PRT, (1 burst length is 0.5S) is enough to cause pin-saving chip and medium to damage, and the time that this damage consumes and data volume size have nothing to do.And this self-desttruction equipment has the characteristic worked alone, do not rely on other assembly in mobile device as (CPU etc.), even if to crash at equipment, under shutdown or abnormality, self-desttruction equipment also can normally work, and realizes self-destroying function.
3. self-desttruction equipment also has the highest level of security of data protection
Self-desttruction equipment utilizes high power, the high voltage pulse energy inside wafer to pin-saving chip and medium to carry out destructive physical damage; cause that inner wafer large area punctures, open circuit, to burn; this physical damage is irreversible; adopt which kind of means also unrepairable; avoid inner significant data to be read or to decipher, there is the highest level of security of data protection.And traditional method is to after in storage chip, data format, professional utilizes high-tech means to be decrypted, repairs, and the data of deleting still have the possible risk be resumed to exist.
Conventional security takes precautions against existence was wiped or formatd to the way technological deficiency that, speed high according to patience is slow or data protection level of security is low to data.Adopt data self-desttruction equipment of the present utility model can solve the technological deficiency of conventional security strick precaution way; and this device is owing to adopting independent working mode; do not rely on other assembly; extremely strong with mobile device compatibility; have that applicability is extensive, transplantability is strong, use the features such as flexible, can be the data protection that different types of mobile device provides the highest level of security.
Above-described specific embodiment; the purpose of this utility model, technical scheme and beneficial effect are further described; be understood that; the foregoing is only specific embodiment of the utility model; be not limited to the utility model; all within spirit of the present utility model and principle, any amendment made, equivalent replacement, improvement etc., all should be included within protection domain of the present utility model.
Claims (12)
1. a self-desttruction equipment for electronic equipment, it comprises:
Self-destruction flip flop equipment, it is arranged on the housing of electronic equipment, for illegally opened at the housing of electronic equipment or broken shell time, trigger a self-destruction signal, and exported to self-destruction actuating unit;
Self-destruction actuating unit, it is after the described self-destruction signal that described self-destruction flip flop equipment exports being detected, and carries out physical damage to the pin-saving chip of described electronic equipment and/or data storage medium; Wherein, described physical damage refers to and high voltage pulse is added to the pin-saving chip of described electronic equipment and/or the pin of data storage medium, causes burning of inner wafer, device;
Battery power supply system: for powering for electronic equipment and described self-desttruction equipment.
2. self-desttruction equipment as claimed in claim 1, wherein, described self-destruction flip flop equipment comprises:
Be arranged at least one switch on casting of electronic device;
At least one switch described comprises: the upper and lower contact being arranged on described electronic equipment upper and lower casing relative position; When the upper and lower casing of described electronic equipment is in closure state, described upper and lower contact electrical contact, corresponding described switch is in closure state; When the upper and lower casing of described electronic equipment is separated, described upper and lower contact is in released state, and corresponding described switch is in off-state.
3. self-desttruction equipment as claimed in claim 2, wherein, described self-destruction flip flop equipment comprises the described switch of multiple series connection, and when one of them switch is in off-state, described self-destruction flip flop equipment triggers a self-destruction signal.
4. self-desttruction equipment as claimed in claim 2, wherein, described self-destruction flip flop equipment comprises the described switch of multiple parallel connection, and when all switches are all in off-state, described self-destruction flip flop equipment triggers a self-destruction signal.
5. self-desttruction equipment as claimed in claim 2, wherein, described self-destruction flip flop equipment comprises the Part I switch of multiple parallel connection and the Part II switch of multiple series connection; When all switches in Part I switch are in off-state, and when any one switch in Part II switch is in off-state, described self-destruction flip flop equipment triggers a self-destruction signal.
6. the self-desttruction equipment as described in any one of claim 3-5, wherein, multiple switch is separately positioned on the diverse location place of casting of electronic device.
7. self-desttruction equipment as claimed in claim 6, wherein, described multiple switch is separately positioned on four corners, the side of casting of electronic device, and/or pin-saving chip and/or storage medium position place.
8. self-desttruction equipment as claimed in claim 1, wherein, described self-destruction actuating unit comprises: detection module, boost module and pulse control module;
Described detection module receives self-destruction signal from described self-destruction flip flop equipment; Described detection module is also connected to battery power supply system, and for being communicated with or isolating described battery power supply system and boost module, pulse control module;
Described boost module, after being communicated with described battery power supply system, producing DC high voltage, and is exported to pulse control module;
Described pulse control module, after being communicated with described battery power supply system, after changing the DC high voltage received from described boost module into DC pulse voltage, exports pin-saving chip and/or the storage medium of electronic equipment to.
9. self-desttruction equipment as claimed in claim 8, wherein, described pick-up unit comprises:
11 resistance (R11), its first end is connected to node A, and the second end is connected to the supply voltage V that described battery power supply system provides
bATTERY;
12 resistance (R12), is connected between node A and Node B, wherein, and Node B ground connection; Wherein, node A and Node B are connected to two output terminals of described self-destruction trigger circuit;
11 triode (011), its base stage is connected to node A by the 13 resistance (R13); Its collector is connected to supply voltage V by the 14 resistance (R14)
bATTERY; Its emitter is connected to ground;
12 P channel MOS tube (M12), its G pin is connected to the collector of described 11 triode (Q11) by the 15 resistance (R15), and its S pin is connected to described supply voltage V
bATTERY; Its D pin is connected to the output terminal of detection module.
10. self-desttruction equipment as claimed in claim 8, wherein, described boost module comprises:
Filtering circuit, for filtering by the clutter in detection module input signal;
Booster circuit, comprising: energy storage inductor (L31) its first end is connected to the output terminal of filtering circuit, and the second end is connected to the output terminal of booster circuit by the 21 diode (D21); Boosting driving chip (U302), it is EUP2586 chip, and the VIN pin of this EUP2586 chip is connected to the first end of energy storage inductor (L31); SHDN pin is connected to the output terminal of filtering circuit by the 21 resistance (R21), and by the 23 electric capacity (C23) ground connection; SW pin is connected to the second end of energy storage inductor (L31); OVP pin is connected to the negative pole end of the 21 diode (D21); GND pin ground connection;
Negative voltage feedback network, for adjusting the amplitude of booster circuit output voltage, comprise: the 24 electric capacity (C24), its first end is connected to the FB pin of boosting driving chip (U302), and its second end is connected to the output terminal of booster circuit; 23 resistance (R23), itself and the 24 resistance (R24) are connected in series, its first end is connected to the output terminal of booster circuit, second end connects the 24 resistance (R24), is also connected to the FB pin of boosting driving chip (U302) by the 22 resistance (R22); 24 resistance (R24), itself and the 23 resistance (R23) are connected in series, and its first end is connected to second end of the 23 resistance R23, the second end ground connection;
Tank circuit, comprise the 25 electric capacity (C25) in parallel and the 26 electric capacity (C26), both first ends are connected to the output terminal of negative voltage feedback network, the second end ground connection.
11. self-desttruction equipments as claimed in claim 8, wherein, described pulse control module comprises:
Oscillatory circuit, it is for generation of oscillation pulse signal; Described oscillatory circuit comprises: the 31 not gate (NOT 31) and the 32 not gate (NOT 32); Wherein, 31 not gate (NOT31) and the 32 not gate (NOT 32) end to end, and the input end of the 31 not gate (NOT 31) is connected to the 32 electric capacity (C32) be connected with the output terminal of described 32 not gate (NOT 32) is connected by the 31 resistance (R31), its output terminal is connected to the output terminal of this oscillatory circuit, for exporting described oscillation pulse signal; The output terminal of the 31 not gate (NOT 31) is also connected to the first end of the 32 resistance, and the second end of the 32 resistance is connected between described 31 resistance and the 32 electric capacity;
Pulsed electron on-off circuit, comprise: multiple P channel MOS tube, the S pin of each P channel MOS tube is connected to the output terminal of boost module, and G pin is connected to the output terminal of boost module by resistance, and D pin is connected to different pieces of information storage chip and/or the storage medium of electronic equipment respectively;
31 triode (Q31), its base stage is connected to the output terminal of oscillatory circuit by the 33 resistance (R33), its grounded emitter, the G pin of each above-mentioned P channel MOS tube is connected to the collector of the 31 triode Q31 by resistance and diode.
12. self-desttruction equipments as claimed in claim 1, wherein, described battery power supply system, by arranging, at least retains the electric energy of preset ratio for described self-destruction executive circuit.
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| Application Number | Priority Date | Filing Date | Title |
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| CN201420626478.0U CN204203972U (en) | 2014-10-27 | 2014-10-27 | A kind of self-desttruction equipment of electronic equipment |
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| CN201420626478.0U CN204203972U (en) | 2014-10-27 | 2014-10-27 | A kind of self-desttruction equipment of electronic equipment |
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Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN106372542A (en) * | 2016-11-04 | 2017-02-01 | 上海控易电子科技有限公司 | Data protection self-destruction system |
| CN110276218A (en) * | 2019-06-26 | 2019-09-24 | 昆山国显光电有限公司 | Display module, self-destruction method, the electronic equipment of display module |
| CN110569679A (en) * | 2019-10-08 | 2019-12-13 | 福建实达电脑设备有限公司 | Cover-detaching self-destruction circuit for terminal and control method thereof |
| CN111994457A (en) * | 2020-08-20 | 2020-11-27 | 天地融科技股份有限公司 | Power generation self-destruction anti-counterfeiting device and system of liquid container with stop pin |
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2014
- 2014-10-27 CN CN201420626478.0U patent/CN204203972U/en active Active
Cited By (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN106372542A (en) * | 2016-11-04 | 2017-02-01 | 上海控易电子科技有限公司 | Data protection self-destruction system |
| CN106372542B (en) * | 2016-11-04 | 2024-02-20 | 上海控易电子科技有限公司 | Data protection self-destruction system |
| CN110276218A (en) * | 2019-06-26 | 2019-09-24 | 昆山国显光电有限公司 | Display module, self-destruction method, the electronic equipment of display module |
| CN110276218B (en) * | 2019-06-26 | 2021-03-26 | 昆山国显光电有限公司 | Display module, self-destruction method of display module and electronic equipment |
| CN110569679A (en) * | 2019-10-08 | 2019-12-13 | 福建实达电脑设备有限公司 | Cover-detaching self-destruction circuit for terminal and control method thereof |
| CN111994457A (en) * | 2020-08-20 | 2020-11-27 | 天地融科技股份有限公司 | Power generation self-destruction anti-counterfeiting device and system of liquid container with stop pin |
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