CN205721214U - A kind of intelligent soy milk grinder control circuit - Google Patents

A kind of intelligent soy milk grinder control circuit Download PDF

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Publication number
CN205721214U
CN205721214U CN201620354697.7U CN201620354697U CN205721214U CN 205721214 U CN205721214 U CN 205721214U CN 201620354697 U CN201620354697 U CN 201620354697U CN 205721214 U CN205721214 U CN 205721214U
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China
Prior art keywords
power supply
control chip
circuit
electrically connects
master control
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CN201620354697.7U
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Inventor
王旭宁
金文伟
郭明升
余青辉
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Hangzhou Joyoung Household Electrical Appliances Co Ltd
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Hangzhou Joyoung Household Electrical Appliances Co Ltd
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Abstract

This utility model one intelligent soy milk grinder control circuit, including Switching Power Supply, Master control chip MCU1, secondary control chip MCU2, wireless communication module, it is characterized in that, different chips is powered by different power supplys, described Master control chip MCU1 and the described secondary control mutual communication of chip MCU2, described Master control chip MCU1 and the mutual communication of described wireless communication module, and Master control chip MCU1 possesses powder down memory circuit.Possessing the state preservation in the case of different functions realizes powered-off fault by primary and secondary control chip, Master control chip is uniformly controlled the state of secondary control chip and wireless communication module, it is simple to the design of functions expanding and complicated UI realizes.

Description

A kind of intelligent soy milk grinder control circuit
Technical field
This utility model relates to a kind of intelligent soy milk grinder, particularly relates to the control circuit of a kind of domestic intelligent soy bean milk making machine.
Background technology
Along with the lifting of soy bean milk making machine intelligence degree, the content that its machine shows gets more and more, and the function possessed the most more is come The most complicated, single control chip has been difficult to meet design requirement.More existing intelligent soy milk grinders, not only have biography The function of system soy bean milk making machine, also has network function, and the content of display is the most more rich, for existing technology, so generally Design be all to realize by increasing by the way of display driver chip, or be further added by a chips and expand corresponding money Source, it is thus possible to meet design requirement.
It is designed as when the most common, no matter is a chips, or multiple chips, it is all by same power supply, When soy bean milk making machine abnormal power-down, if needing to realize power-failure memory function, process logic during its power down is that each process is each, with Time all pass through same power supply due to all of circuit, after a power failure, its load is very big, even if there being powder down memory circuit, its Power down preserve time it is difficult to ensure that.
Utility model content
Technical problem to be solved in the utility model is to overcome the deficiencies in the prior art, it is provided that the scheme of a kind of multi-chip Realize the functions expanding of soy bean milk making machine, be substantially made up of Master control chip, secondary control chip and wireless control module;The most different Chip and module are powered by different power supplys, can effectively realize the soy bean milk making machine state protection in the case of soy bean milk making machine powered-off fault, After soy bean milk making machine abnormal power-down, Master control chip realizes power down identification and the scene protection of soy bean milk making machine shutdown transient, so that bean After pulp grinder abnormal power-down powers on again, soy bean milk making machine can recover the state before power down.
In order to solve above technical problem, this utility model provides a kind of intelligent soy milk grinder control circuit, including switch Power supply, Master control chip MCU1, secondary control chip MCU2, wireless communication module, it is preferred that described Switching Power Supply exports three road electricity Source, described three-way power is the first power supply AVIN, the second power supply VCC and the 3rd power supply VDD, and described second supplies Electricity power supply VCC is exported through LDO module by described Switching Power Supply, and described 3rd power supply VDD is passed through by described Switching Power Supply DC-DC module exports, and described first power supply AVIN powers to described Master control chip MCU1, described second power supply VCC powers to described secondary control chip MCU2, and described 3rd power supply VDD powers to described wireless communication module, described master Control chip MCU1 and the described secondary control mutual communication of chip MCU2, described Master control chip MCU1 and described wireless communication module Mutually communication.
Preferably, described control circuit includes load drive control circuit, key circuit, signal sample circuit, power down note Recalling circuit, display circuit, described load drive control circuit, key circuit, signal sample circuit, powder down memory circuit are with described Master control chip MCU1 connects, and described display circuit electrically connects with described secondary control chip MCU2.
Preferably, described powder down memory circuit includes diode D1, resistance R1 and electrochemical capacitor EC1, described diode D1 Anode electrically connects described Switching Power Supply, and described diode D1 negative electrode electrically connects described resistance R1 one end, the described resistance R1 other end Electrically connecting described electrochemical capacitor EC1 positive pole and described first power supply AVIN, described electrochemical capacitor EC1 negative electricity connects described The negative pole VSS of the first power supply AVIN.
Preferably, described powder down memory circuit includes diode D2, discharge resistance R2, pull-up resistor R3, charging resistor R4 With electrochemical capacitor EC2, described charging resistor R4 one end electrically connects A/D switched pins ADC of described Master control chip MCU1, another End electrically connects described pull-up resistor R3 one end and the anode of described diode D2, and described pull-up resistor R3 electrical connection described first supplies Electricity power supply AVIN, described discharge resistance R2 one end electrically connects negative electrode and the positive pole of described electrochemical capacitor EC2 of described diode D2, The other end of described discharge resistance R2 electrically connects the negative pole of described electrochemical capacitor EC2, and the negative electricity of described electrochemical capacitor EC2 connects The negative pole VSS of described first power supply AVIN.
Preferably, described powder down memory circuit includes diode D5, discharge and recharge resistance R7, electrochemical capacitor EC3, described two poles Pipe D5 anode electrically connects one end and the ADC pin of described Master control chip MCU1, the moon of described D5 of described discharge and recharge resistance R7 Pole electrically connects the other end and the positive pole of described electrochemical capacitor EC3, the described electrochemical capacitor EC3 negative electricity of described discharge and recharge resistance R7 Connect the negative pole VSS of described first power supply AVIN.
Preferably, described Master control chip MCU1 controls the state of described DC-DC circuit, described main control by I/O mouth The I/O mouth of chip MCU1 electrically connects the enable mouth EN of described DC-DC circuit, realizes DC-DC electricity by I/O mouth output low and high level The state on road controls.
Preferably, described DC-DC circuit includes TVS pipe D3 of an overvoltage protection, the anode electrical connection of described TVS pipe D3 The negative pole VSS of described 3rd power supply VDD, the negative electrode of described TVS pipe D3 electrically connects described 3rd power supply VDD.
Preferably, described DC-DC circuit includes the critesistor R6 of an overcurrent protection, described critesistor R6 one end electricity Connecting the outfan of DC-DC, the other end electrically connects described 3rd power supply VDD.
Preferably, described critesistor R6 is semistor, and described TVS pipe limiting voltage value is chosen as VDD。
Preferably, TVS pipe D4, the sun of described TVS pipe D4 it are connected between described Switching Power Supply and described three-way power Pole electrically connects the positive pole of described switched power output, and the negative electrode of described TVS pipe D4 electrically connects described switched power output Negative pole.
Realize different functions by different chips, connected by communication between different chips, it is achieved soy bean milk making machine merit Effective expansion of energy, the content of display interface can be abundanter, and different chips is realized power supply by different power supplys so that The circuit design of soy bean milk making machine goes to ensure the guard time of power down without designing the most complicated powder down memory circuit, it is only necessary to core The one chip of the heart possesses powder down memory circuit, this design so that the time of power down can be effectively ensured.
Accompanying drawing explanation
Below in conjunction with accompanying drawing, this utility model is described in further details:
Fig. 1 is the circuit theory sketch of the embodiment 1 of soy bean milk making machine of the present utility model;
Fig. 2 is the circuit theory sketch of the embodiment 2 of soy bean milk making machine of the present utility model;
Fig. 3 is the circuit theory sketch of the embodiment 3 of soy bean milk making machine of the present utility model;
Detailed description of the invention
Below in conjunction with drawings and Examples, this utility model is described in further detail:
Embodiment 1:
This utility model relates to the control circuit of a kind of domestic intelligent soy bean milk making machine, as it is shown in figure 1, include Switching Power Supply, master Control chip MCU1, secondary control chip MCU2, wireless communication module, described Switching Power Supply output three-way power, described three road electricity Source is the first power supply AVIN, the second power supply VCC and the 3rd power supply VDD, and described second power supply VCC is by institute Stating Switching Power Supply to export through LDO module, described 3rd power supply VDD is exported through DC-DC module by described Switching Power Supply, Described first power supply AVIN powers to described Master control chip MCU1, and described second power supply VCC gives described secondary control Chip MCU2 powers, and described 3rd power supply VDD powers to described wireless communication module, described Master control chip MCU1 and institute State the secondary control mutual communication of chip MCU2, described Master control chip MCU1 and the mutual communication of described wireless communication module.Described control Circuit processed includes load drive control circuit, key circuit, signal sample circuit, powder down memory circuit, display circuit, described negative Carry and drive control circuit, key circuit, signal sample circuit, powder down memory circuit to be connected with described Master control chip MCU1, institute State display circuit to electrically connect with described secondary control chip MCU2.Described powder down memory circuit includes diode D1, resistance R1 and electricity Solving electric capacity EC1, described diode D1 anode electrically connects described Switching Power Supply, and described diode D1 negative electrode electrically connects described resistance R1 One end, the described resistance R1 other end electrically connects described electrochemical capacitor EC1 positive pole and described first power supply AVIN, described electrolysis Electric capacity EC1 negative electricity connects the negative pole VSS of described first power supply AVIN.Described Master control chip MCU1 is controlled by I/O mouth Making the state of described DC-DC circuit, the I/O mouth of described Master control chip MCU1 electrically connects the enable mouth EN of described DC-DC circuit, The state being realized DC-DC circuit by I/O mouth output low and high level is controlled.Described DC-DC circuit includes an overvoltage protection TVS pipe D3, the anode of described TVS pipe D3 electrically connects the negative pole VSS of described 3rd power supply VDD, the negative electrode of described TVS pipe D3 Electrically connect described 3rd power supply VDD.Described DC-DC circuit includes the critesistor R6 of an overcurrent protection, described temperature-sensitive The outfan of resistance R6 one end electrical connection DC-DC, the other end electrically connects described 3rd power supply VDD.Described critesistor R6 For semistor, described TVS pipe limiting voltage value is chosen as VDD.Described Switching Power Supply and described three-way power Between be connected to TVS pipe D4, the anode of described TVS pipe D4 electrically connects the positive pole of described switched power output, described TVS pipe The negative electrode of D4 electrically connects the negative pole of described switched power output.
Its operation principle is, Master control chip MCU1 is responsible for the control part of whole soy bean milk making machine, including signals collecting, load Control, push button signalling process, power-failure memory functional realiey, state that display is relevant preserve and send, the connecing of network coherent signal Receive and report, the function such as the state control of DC-DC circuit, when Master control chip MCU1 recognizes system power failure, due to power down The existence of memory circuit, in the short time of power down, MCU1 is powered by powder down memory circuit, and now Master control chip MCU1 closes All of port, performs corresponding pulping program step, shows that the state such as content, network data is saved in the EEPROM carried In, wait system power supply next time, if powered within the power down permission time, Master control chip MCU1 reads in EEPROM and preserves Data, and recover normal display and work, the data of power down moment be sent to server by wireless communication module simultaneously And App.
Secondary control chip MCU2 and Master control chip MCU1 communication, be responsible for receiving information that Master control chip MCU1 sends and The correlation function content of display soy bean milk making machine, its shown content is that Master control chip MCU1 sends entirely.
Electrochemical capacitor EC1 in powder down memory circuit is started to charge up by resistance R1 when normal power supply, works as system power failure Time, electrochemical capacitor EC1 starts to discharge and works for main control MCU1, and D1 prevents EC1 back discharge when power down from causing power down Time is short.
The state of DC-DC circuit realizes control by the I/O mouth of Master control chip MCU1, generally, is all logical Cross the enable mouth EN of DC-DC circuit chips to realize state control, it is also possible to realize state by other on-off circuit Control, be not repeated herein;Owing to considering in the case of DC-DC module inefficacy short circuit, the wireless communication module of rear end is pressure Relatively low, direct voltage impact is easily damaged wireless communication module, increases a protection scheme, protection scheme at DC-DC outfan Using over-current over-voltage protection pattern, overcurrent protection is realized by critesistor R6, and overvoltage protection is managed by element D3(TVS) real Existing.Working mechanism is when there is power supply misconnection, TVS pipe first action, and electric current increases therewith, when electric current reached stream original paper heat During the trigger current of quick resistance R6, circuit turns off, and is possible to prevent long-time overvoltage to burn out late-class circuit.Additionally as circuit occurs Transient overvoltage pulse, TVS pipe can be additionally used in voltage and releases, and rear class plays clamper protective effect.
Due to operation principle problem, switched power output there will be the voltage that transient pulse is too high, for preventing this kind of arteries and veins Rush voltage and damage other devices in circuit, increase TVS pipe D4 in its output rear end, when the peaking voltage of outfan surpasses When going out the clamp voltage of TVS pipe D4, TVS pipe action, spike is carried out voltage and releases, thus protect back-end circuit.
Embodiment 2:
The present embodiment is with the difference of above-described embodiment 1, and described powder down memory circuit includes diode D2, discharge resistance R2, pull-up resistor R3, charging resistor R4 and electrochemical capacitor EC2, described charging resistor R4 one end electrically connects described Master control chip A/D switched pins ADC of MCU1, the other end electrically connects described pull-up resistor R3 one end and the anode of described diode D2, described Pull-up resistor R3 electrically connects described first power supply AVIN, and described discharge resistance R2 one end electrically connects the moon of described diode D2 Pole and the positive pole of described electrochemical capacitor EC2, the other end of described discharge resistance R2 electrically connects the negative pole of described electrochemical capacitor EC2, The negative electricity of described electrochemical capacitor EC2 connects the negative pole VSS of described first power supply AVIN.Master control chip MCU1 when powering on ADC pin as delivery outlet to electric capacity EC2 charge, after power down, electric capacity EC2 is discharged by R2, and EC2 electric capacity both end voltage can not Disconnected reduction, the voltage of ADC also can reduce simultaneously, and (EC2 electric capacity leakage current is the least, and R2 resistance is very big, ADC point in the ideal situation Voltage decline the slowest), which power-failure memory time can be the longest.
Embodiment 3:
The present embodiment is with the difference of above-described embodiment 1, described powder down memory circuit include diode D1, resistance R1 and Electrochemical capacitor EC1, described diode D1 anode electrically connects described Switching Power Supply, and described diode D1 negative electrode electrically connects described resistance R1 one end, the described resistance R1 other end electrically connects described electrochemical capacitor EC1 positive pole and described first power supply AVIN, described electricity Solve the negative pole VSS that electric capacity EC1 negative electricity connects described first power supply AVIN.Described powder down memory circuit also includes diode D5, discharge and recharge resistance R7, electrochemical capacitor EC3, described diode D5 anode electrically connects one end and the institute of described discharge and recharge resistance R7 Stating the ADC pin of Master control chip MCU1, the negative electrode of described D5 electrically connects the other end of described discharge and recharge resistance R7 and described electricity Solving the positive pole of electric capacity EC3, described electrochemical capacitor EC3 negative electricity connects the negative pole VSS of described first power supply AVIN.
During system normal power supply, EC3 is charged by Master control chip MCU1 by ADC mouth, and when system power failure, EC1 discharges Thus Master control chip MCU1 is powered, the Master control chip MCU1 magnitude of voltage by sampling ADC mouth, goes to switch the normal of chip Duty and low-power consumption duty, thus realize the prolongation of power down time.
It is emphasized that protection domain of the present utility model is including but not limited to above-mentioned detailed description of the invention.Should refer to Go out, for the person of ordinary skill of the art, on the premise of without departing from this utility model principle, it is also possible to make some Deformation and improvement, these also should be considered to belong to protection domain of the present utility model.

Claims (10)

1. an intelligent soy milk grinder control circuit, including Switching Power Supply, Master control chip MCU1, secondary control chip MCU2, nothing Line communication module, it is characterised in that described Switching Power Supply output three-way power, described three-way power is the first power supply AVIN, the second power supply VCC and the 3rd power supply VDD, described second power supply VCC is passed through by described Switching Power Supply LDO module exports, and described 3rd power supply VDD is exported through DC-DC module by described Switching Power Supply, described first power supply electricity Source AVIN powers to described Master control chip MCU1, and described second power supply VCC powers to described secondary control chip MCU2, institute State the 3rd power supply VDD to power to described wireless communication module, described Master control chip MCU1 and described secondary control chip The mutual communication of MCU2, described Master control chip MCU1 and the mutual communication of described wireless communication module.
Intelligent soy milk grinder control circuit the most according to claim 1, it is characterised in that described control circuit includes load Driving control circuit, key circuit, signal sample circuit, powder down memory circuit, display circuit, described load drives and controls electricity Road, key circuit, signal sample circuit, powder down memory circuit are connected with described Master control chip MCU1, described display circuit with Described secondary control chip MCU2 electrically connects.
Intelligent soy milk grinder control circuit the most according to claim 2, it is characterised in that described powder down memory circuit includes Diode D1, resistance R1 and electrochemical capacitor EC1, described diode D1 anode electrically connects described Switching Power Supply, described diode D1 Negative electrode electrically connects described resistance R1 one end, described resistance R1 other end electrical connection described electrochemical capacitor EC1 positive pole and described first Power supply AVIN, described electrochemical capacitor EC1 negative electricity connects the negative pole VSS of described first power supply AVIN.
Intelligent soy milk grinder control circuit the most according to claim 2, it is characterised in that described powder down memory circuit includes Diode D5, discharge and recharge resistance R7, electrochemical capacitor EC3, described diode D5 anode electrically connects the one of described discharge and recharge resistance R7 End and the ADC pin of described Master control chip MCU1, the negative electrode of described D5 electrically connect described discharge and recharge resistance R7 the other end and The positive pole of described electrochemical capacitor EC3, described electrochemical capacitor EC3 negative electricity connects the negative pole VSS of described first power supply AVIN.
Intelligent soy milk grinder control circuit the most according to claim 2, it is characterised in that described powder down memory circuit includes Diode D2, discharge resistance R2, pull-up resistor R3, charging resistor R4 and electrochemical capacitor EC2, described charging resistor R4 one end is electrically connected Connecing A/D switched pins ADC of described Master control chip MCU1, the other end electrically connects described pull-up resistor R3 one end and described two poles The anode of pipe D2, described pull-up resistor R3 electrically connects described first power supply AVIN, and described discharge resistance R2 one end electrically connects The negative electrode of described diode D2 and the positive pole of described electrochemical capacitor EC2, the other end of described discharge resistance R2 electrically connects described electricity Solving the negative pole of electric capacity EC2, the negative electricity of described electrochemical capacitor EC2 connects the negative pole VSS of described first power supply AVIN.
Intelligent soy milk grinder control circuit the most according to claim 1, it is characterised in that described Master control chip MCU1 leads to Crossing I/O mouth and control the state of described DC-DC circuit, the I/O mouth of described Master control chip MCU1 electrically connects described DC-DC circuit Enabling mouth EN, the state being realized DC-DC circuit by I/O mouth output low and high level is controlled.
Intelligent soy milk grinder control circuit the most according to claim 6, it is characterised in that described DC-DC circuit includes one TVS pipe D3 of individual overvoltage protection, the anode of described TVS pipe D3 electrically connects the negative pole VSS of described 3rd power supply VDD, described The negative electrode of TVS pipe D3 electrically connects described 3rd power supply VDD.
Intelligent soy milk grinder control circuit the most according to claim 7, it is characterised in that described DC-DC circuit includes one The critesistor R6 of individual overcurrent protection, the outfan of described critesistor R6 one end electrical connection DC-DC, other end electrical connection is described 3rd power supply VDD.
Intelligent soy milk grinder control circuit the most according to claim 8, it is characterised in that described critesistor R6 is positive temperature Degree coefficient resistance, described TVS pipe limiting voltage value is chosen as VDD.
Intelligent soy milk grinder control circuit the most according to claim 9, it is characterised in that described Switching Power Supply is with described Being connected to TVS pipe D4 between three-way power, the anode of described TVS pipe D4 electrically connects the positive pole of described switched power output, The negative electrode of described TVS pipe D4 electrically connects the negative pole of described switched power output.
CN201620354697.7U 2016-04-26 2016-04-26 A kind of intelligent soy milk grinder control circuit Active CN205721214U (en)

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Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN109507916A (en) * 2017-09-14 2019-03-22 佛山市顺德区美的电热电器制造有限公司 Method, apparatus, server and the storage medium that control household electrical appliances are resumed work

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN109507916A (en) * 2017-09-14 2019-03-22 佛山市顺德区美的电热电器制造有限公司 Method, apparatus, server and the storage medium that control household electrical appliances are resumed work
CN109507916B (en) * 2017-09-14 2021-06-29 佛山市顺德区美的电热电器制造有限公司 Method, device, server and storage medium for controlling recovery work of household appliance

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