CN204156825U - Radio-frequency power amplifier - Google Patents
Radio-frequency power amplifier Download PDFInfo
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- CN204156825U CN204156825U CN201420451678.7U CN201420451678U CN204156825U CN 204156825 U CN204156825 U CN 204156825U CN 201420451678 U CN201420451678 U CN 201420451678U CN 204156825 U CN204156825 U CN 204156825U
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Abstract
The utility model relates to the communications field, discloses a kind of radio-frequency power amplifier.In the utility model, radio-frequency power amplifier comprises: the first amplifying circuit, the second amplifying circuit, the 3rd amplifying circuit, the first transformer, the second transformer and the 3rd transformer; Radiofrequency signal successively after the first amplifying circuit, the second amplifying circuit, the 3rd amplifying circuit amplify, then is synthesized by described 3rd transformer efficiency of series connection synthesis, and is exported by its Single-end output end; Wherein, radiofrequency signal inputs the first amplifying circuit by the first transformer; The output of the second amplifying circuit inputs to the 3rd amplifying circuit by the second transformer.Make radiofrequency signal pass through the rear output of transformer synthesis of synthesizing of connecting by three-stage amplifier, increase output voltage swing.
Description
Technical field
The utility model relates to the communications field, particularly radio-frequency power amplifier.
Background technology
Radio-frequency power amplifier (RFPA) is the important component part of various transmitting set.In the front stage circuits of transmitter, the RF signal power that modulation oscillator circuit produces is very little, needs, through amplifying, after obtaining enough radio-frequency powers, just can be fed on antenna and radiate.In order to obtain enough large radio frequency power output, radio-frequency power amplifier must be adopted.
The operating frequency of current radio-frequency power amplifier is very high, but operating voltage is lower, output voltage dynamic range is less, must when load impedance be enough little, could obtain enough large output current and power output under limited output voltage, radio-frequency power amplifier just needs to comprise impedance inverter circuit.
In addition, along with the development that electronic device is integrated, the high integration of radio-frequency power amplifier requires also to have become important development trend.
Utility model content
The purpose of this utility model is to provide a kind of radio-frequency power amplifier, makes the output voltage swing increasing power amplifier chip, improves the efficiency of power amplifier chip, reduce DC power.
For solving the problems of the technologies described above, the utility model provides a kind of radio-frequency power amplifier, comprises: the first amplifying circuit, the second amplifying circuit, the 3rd amplifying circuit, the first transformer, the second transformer and the 3rd transformer; Radiofrequency signal successively after described first amplifying circuit, described second amplifying circuit, described 3rd amplifying circuit amplify, then is synthesized by described 3rd transformer efficiency of series connection synthesis, and is exported by its Single-end output end.
Wherein, described radiofrequency signal is by described first amplifying circuit of described first transformer input; The output of described second amplifying circuit inputs to described 3rd amplifying circuit by described second transformer.
In terms of existing technologies, the main distinction and effect thereof are the utility model execution mode: adopt transformer as the coupling of input and output and inter-stage and impedance inverter circuit, have larger bandwidth of operation.Radiofrequency signal converts differential signal to through transformer input, amplify through the first amplifying circuit, produce voltage gain, the drive current that second amplifying circuit utilizes the second transformer to provide enough large, for driving the 3rd amplifying circuit, by the second transformer transforming impedance, the load resistance that second amplifying circuit is seen becomes large, reduce its DC power, improve the efficiency of the second amplifying circuit, namely improve the efficiency of radio-frequency power amplifier in the utility model execution mode, then power combing transformer (transformer of synthesis of namely connecting) exported to by the 3rd amplifying circuit, finally synthesize single-ended signal and export, make the output voltage swing increasing power amplifier chip.
As further improvement, described first amplifying circuit is the first amplifier, and described first amplifier is class AB amplifier.Further restriction first amplifying circuit is the first amplifier, and the first amplifier is class AB amplifier, and make the structure of the first amplifying circuit simple, it is convenient to realize, and also makes the first amplifying circuit that less quiescent current can be utilized to realize larger gain.
As further improvement, described first amplifier is differential amplifier.Make it possible to the linearity in compensation first amplifying circuit.
As further improvement, described second amplifying circuit comprises at least 2 the second amplifiers; The positive-negative input end of each described second amplifier is connected with the output of described first amplifying circuit respectively, and the output of each described second amplifier is respectively as the output of described second amplifying circuit.
Further define the concrete structure of the second amplifying circuit, make the utility model have realizability.
As further improvement, described 3rd amplifying circuit comprises at least 2 the 3rd amplifiers; Described 3rd amplifier and described second amplifier one_to_one corresponding; The positive-negative input end of each described 3rd amplifier of described 3rd amplifying circuit is connected by described second transformer with the output of described second amplifying circuit respectively, and the output of each described 3rd amplifier is respectively as the output of described 3rd amplifying circuit.
Further define the concrete structure of the 3rd amplifying circuit, utilize the second transformer every directly between the 3rd amplifier and the second amplifier, utilize the second transformer to carry out impedance transformation simultaneously, the electric capacity that second amplification circuit output end is seen is less than the input capacitance of third level reality, be conducive to realizing larger gain under less direct current, the electric capacity (namely parasitic on triode grid in the 3rd amplifying circuit electric capacity) of the 3rd amplifying circuit does not form the load of the second amplifying circuit when low frequency simultaneously, be conducive to stability during radio-frequency power amplifier low frequency in the utility model execution mode.
As further improvement, described 3rd amplifier is pseudo-differential amplifier.Make the output voltage swing of the 3rd amplifying circuit large.
As further improvement, described second amplifier is pseudo-differential amplifier.Make the output voltage swing of the second amplifying circuit large.
As further improvement, the quantity of described second amplifier is 4, and the quantity of described 3rd amplifier is 4.Quantity is respectively second amplifier of 4 and the 3rd amplifier makes the utility model have realizability.
As further improvement, between described first amplifying circuit and described second amplifying circuit, be provided with capacitance.Make the area occupied of the radio-frequency power amplifier reduced in the utility model execution mode, improve chip integration.
As further improvement, described first transformer, described second transformer and described 3rd transformer are on-chip transformer.Each transformer is defined as on-chip transformer, all components and parts in radio-frequency (RF) power amplifier circuit in the utility model execution mode can be integrated on nude film, and without any need for the outer device of sheet, considerably increase the integrated level of radio-frequency power amplifier.
Accompanying drawing explanation
Fig. 1 is the radio-frequency power amplifier structural representation according to the utility model first execution mode.
Embodiment
For making the purpose of this utility model, technical scheme and advantage clearly, below in conjunction with accompanying drawing, each execution mode of the present utility model is explained in detail.But, persons of ordinary skill in the art may appreciate that in each execution mode of the utility model, proposing many ins and outs to make reader understand the application better.But, even without these ins and outs with based on the many variations of following execution mode and amendment, each claim of the application technical scheme required for protection also can be realized.
First execution mode of the present utility model relates to a kind of radio-frequency power amplifier, as shown in Figure 1, comprises: the first amplifying circuit 100, second amplifying circuit 200, the 3rd amplifying circuit 300, first transformer 102, second transformer 202 and the 3rd transformer 302; Radiofrequency signal, successively after the first amplifying circuit 100, second amplifying circuit 200, the 3rd amplifying circuit 300 amplify, is exported by the Single-end output end of the 3rd transformer 302 of series connection synthesis; Wherein, radiofrequency signal inputs the first amplifying circuit 100 by the first transformer 102; The output of the second amplifying circuit 200 inputs to the 3rd amplifying circuit 300 by the second transformer 202.
Specifically, in actual applications, radiofrequency signal inputs the first amplifying circuit 100 through the first transformer 102 and amplifies, produce voltage gain, after capacitance, couple directly on the second amplifying circuit 200, the second amplifying circuit 200 drives the 3rd amplifying circuit 300, and then the output of the 3rd amplifying circuit 300 is synthesized single-ended signal by the 3rd transformer 302 and exported.Also it should be noted that, capacitance can be provided with between the first amplifying circuit 100 and the second amplifying circuit 200, capacitance can make the output node of the first order and the input node of the second level have independently bias voltage, reduces the power consumption of the radio-frequency power amplifier in present embodiment.In particular, the first transformer 102, second transformer 202 and the 3rd transformer 302 are on-chip transformer, to ensure in the radio-frequency power amplifier in present embodiment the equal accessible site of all components and parts on nude film without any need for the outer device of sheet.
It should be noted that, the first amplifying circuit 100 is the first amplifier 101, and the first amplifier 101 is class AB amplifier.In particular, the first amplifier 101 is differential amplifiers, also can be complementary cmos structure.That is, radiofrequency signal inputs the first amplifier 101 through the first transformer 102 and amplifies, the output of the first amplifier 101 as the output of the first amplifying circuit 100, its export after signal be coupled on the second amplifying circuit 200 through capacitance.Also it should be noted that, in actual applications, the first transformer 102 can adopt the transformer of 1:3, to realize higher coupling gain.
It is worth mentioning that, the second amplifying circuit 200 comprises at least 2 the second amplifiers 201, specifically, is 4 the second amplifiers 201 in present embodiment; The positive-negative input end of each second amplifier 201 is connected with the positive-negative output end of the first amplifying circuit 100 respectively, and the output of each second amplifier 201 is respectively as the output of the second amplifying circuit 200.Specifically, the second amplifier 201 is pseudo-differential amplifier, in particular, is also class AB amplifier.
Also it should be noted that, the 3rd amplifying circuit 300 comprises at least 2 the 3rd amplifiers 301, specifically, is 4 the 3rd amplifiers 301 in present embodiment; 3rd amplifier 301 and the second amplifier 201 one_to_one corresponding; The positive-negative input end of each 3rd amplifier 301 of the 3rd amplifying circuit 300 is connected by the second transformer 202 with the output of the second amplifying circuit 200 respectively, and the output of each 3rd amplifier 301 is respectively as the output of the 3rd amplifying circuit 300.Specifically, the 3rd amplifier 301 is pseudo-differential amplifier, also can be complementary cmos structure or NMOS structure, in particular, is also class AB amplifier.
Specifically, in actual applications, the second transformer 202 arranged between the 3rd amplifier 301 and the second amplifier 201 is 2:1 transformer, namely make use of transformer every directly, the integrated level between components and parts can be improved, save the area of chip, in addition, the second transformer 202 is utilized to carry out impedance transformation, the load capacitance that the output of the second amplifying circuit 200 is seen is significantly less than the actual input capacitance of the 3rd amplifying circuit 300, be conducive to realizing larger gain under less direct current, the electric capacity (namely parasitic on metal-oxide-semiconductor grid in the 3rd amplifying circuit electric capacity) of the 3rd amplifying circuit 300 does not form the load of the second amplifying circuit 200 when low frequency simultaneously, be conducive to stability during radio-frequency power amplifier low frequency in the utility model execution mode.
Also it should be noted that, the output of the 3rd amplifier 301 connects the 3rd transformer 302, that is, in present embodiment, 4 the 3rd amplifiers 301 connect 4 the 3rd transformers 302 respectively, the secondary coil series connection of 4 the 3rd transformers 302, can to connect the output of each amplifier of synthesis, the output of the radio-frequency power amplifier in present embodiment is connect power output that 50Ohm load can obtain watt level.
Wherein, it is worth mentioning that, the quantity one_to_one corresponding of amplifier in the amplifier quantity in the second amplifying circuit 200 and the 3rd amplifying circuit 300, and with the same one_to_one corresponding of quantity of the 3rd transformer 302, present embodiment for quantity for 4.
In terms of existing technologies, the main distinction and effect thereof are present embodiment: adopt transformer as the coupling of input and output and inter-stage and impedance inverter circuit, have larger bandwidth of operation.Radiofrequency signal converts differential signal to through transformer input, amplify through the first amplifying circuit 100, produce voltage gain, second amplifying circuit 200 utilizes the second transformer 202 to provide enough large drive current, for driving the 3rd amplifying circuit 300, second transformer realizes impedance transformation simultaneously, reduce its DC power, improve the efficiency of the second amplifying circuit, namely improve the efficiency of radio-frequency power amplifier in present embodiment, then the 3rd amplifying circuit 300 is finally synthesized single-ended signal by the transformer of series connection synthesis and is exported after exporting, make the output voltage swing increasing power amplifier chip.In addition, present embodiment utilizes on-chip transformer that integrated power synthesis circuit the most difficult in power amplifier has been integrated on sheet, all components and parts are all integrated on nude film, and without any need for the outer device of sheet, overcome the bottleneck of power amplifier in integrated level.
Second execution mode of the present utility model relates to a kind of radio-frequency power amplifier equally, present embodiment is roughly the same with the first execution mode, the main distinction is: in the first execution mode, the quantity of the second amplifier 201, the 3rd amplifier 301 and the 3rd transformer 302 is respectively 4, and in present embodiment, the quantity of the second amplifier 201, the 3rd amplifier 301 and the 3rd transformer 302 is respectively 3.Specifically, the 3rd amplifier 301 adopts differential complement CMOS structure in the first embodiment, adopts 3.4V supply voltage, with 4 unit synthesis, can realize the peak power output more than 31dBm, meet the requirement of 3G, 4G radio communication; And in the present embodiment, the 3rd amplifier 301 adopts difference NMOS structure, adopt 3.4V supply voltage, with 3 unit synthesis, the peak power output more than 35dBm can be realized, meet the requirement of 2G radio communication.In addition, use less power cell, be conducive to improve combined coefficient.
In actual applications, the concrete quantity of the second amplifier 201, the 3rd amplifier 301 and the 3rd transformer 302 can depend on impedance transformation ratio.The quantity of transformer can determine according to the impedance transformation ratio in practical application scene, that is, according to the maximum power of required output and the supply voltage of employing and circuit structure, impedance transformation ratio can be determined, and the base impedance conversion ratio that transformer realizes is with square being directly proportional of turn ratio of transformer two coil.Make the radio-frequency power amplifier in present embodiment more precise and stable, expand application scenarios of the present utility model further.
Persons of ordinary skill in the art may appreciate that the respective embodiments described above realize specific embodiment of the utility model, and in actual applications, various change can be done to it in the form and details, and do not depart from spirit and scope of the present utility model.
Claims (10)
1. a radio-frequency power amplifier, is characterized in that, comprises: the first amplifying circuit, the second amplifying circuit, the 3rd amplifying circuit, the first transformer, the second transformer and the 3rd transformer; Radiofrequency signal, successively after described first amplifying circuit, described second amplifying circuit, described 3rd amplifying circuit amplify, by the described 3rd transformer efficiency synthesis of series connection synthesis, and is exported by its Single-end output end;
Wherein, described radiofrequency signal is by described first amplifying circuit of described first transformer input;
The output of described second amplifying circuit inputs to described 3rd amplifying circuit by described second transformer.
2. radio-frequency power amplifier according to claim 1, is characterized in that, described first amplifying circuit is the first amplifier, and described first amplifier is class AB amplifier.
3. radio-frequency power amplifier according to claim 2, is characterized in that, described first amplifier is pseudo-differential amplifier.
4. radio-frequency power amplifier according to claim 1, is characterized in that, described second amplifying circuit comprises at least 2 the second amplifiers; The positive-negative input end of each described second amplifier is connected with the output of described first amplifying circuit respectively, and the output of each described second amplifier is respectively as the output of described second amplifying circuit.
5. radio-frequency power amplifier according to claim 4, is characterized in that, described 3rd amplifying circuit comprises at least 2 the 3rd amplifiers; Described 3rd amplifier and described second amplifier one_to_one corresponding;
The positive-negative input end of each described 3rd amplifier of described 3rd amplifying circuit is connected by described second transformer with the output of described second amplifying circuit respectively, and the output of each described 3rd amplifier is respectively as the output of described 3rd amplifying circuit.
6. radio-frequency power amplifier according to claim 5, is characterized in that, described 3rd amplifier is pseudo-differential amplifier.
7. radio-frequency power amplifier according to claim 4, is characterized in that, described second amplifier is pseudo-differential amplifier.
8. radio-frequency power amplifier according to claim 4, is characterized in that, the quantity of described second amplifier is 4, and the quantity of described 3rd amplifier is 4.
9. radio-frequency power amplifier as claimed in any of claims 1 to 8, is characterized in that, is provided with capacitance between described first amplifying circuit and described second amplifying circuit.
10. radio-frequency power amplifier as claimed in any of claims 1 to 8, is characterized in that, described first transformer, described second transformer and described 3rd transformer are on-chip transformer.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201420451678.7U CN204156825U (en) | 2014-08-12 | 2014-08-12 | Radio-frequency power amplifier |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201420451678.7U CN204156825U (en) | 2014-08-12 | 2014-08-12 | Radio-frequency power amplifier |
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| Publication Number | Publication Date |
|---|---|
| CN204156825U true CN204156825U (en) | 2015-02-11 |
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| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201420451678.7U Expired - Fee Related CN204156825U (en) | 2014-08-12 | 2014-08-12 | Radio-frequency power amplifier |
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| Country | Link |
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| CN (1) | CN204156825U (en) |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN105978515A (en) * | 2016-05-03 | 2016-09-28 | 华南理工大学 | Transformer coupling radio frequency power amplifier with wide adjustment range and high integration level |
| CN112737520A (en) * | 2019-10-28 | 2021-04-30 | 天津大学青岛海洋技术研究院 | CMOS radio frequency power amplifier using off-chip transmission line |
-
2014
- 2014-08-12 CN CN201420451678.7U patent/CN204156825U/en not_active Expired - Fee Related
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN105978515A (en) * | 2016-05-03 | 2016-09-28 | 华南理工大学 | Transformer coupling radio frequency power amplifier with wide adjustment range and high integration level |
| CN105978515B (en) * | 2016-05-03 | 2018-10-19 | 华南理工大学 | The wide transformer coupled radio-frequency power amplifier of adjusting range high integration |
| CN112737520A (en) * | 2019-10-28 | 2021-04-30 | 天津大学青岛海洋技术研究院 | CMOS radio frequency power amplifier using off-chip transmission line |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| C14 | Grant of patent or utility model | ||
| GR01 | Patent grant | ||
| CF01 | Termination of patent right due to non-payment of annual fee | ||
| CF01 | Termination of patent right due to non-payment of annual fee |
Granted publication date: 20150211 Termination date: 20190812 |