CN204130903U - A kind of semiconductor laser - Google Patents
A kind of semiconductor laser Download PDFInfo
- Publication number
- CN204130903U CN204130903U CN201420576077.9U CN201420576077U CN204130903U CN 204130903 U CN204130903 U CN 204130903U CN 201420576077 U CN201420576077 U CN 201420576077U CN 204130903 U CN204130903 U CN 204130903U
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- China
- Prior art keywords
- semiconductor laser
- emitter
- grid
- negative electrode
- utility
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Abstract
The utility model relates to a kind of semiconductor laser, comprise substrate, described surface is provided with negative electrode, and described negative electrode two ends are respectively arranged with insulator, and described insulator is provided with grid, between described grid, negative electrode upper center is provided with emitter, is respectively arranged with electron emission pointed cone between described emitter and grid, is provided with phosphorescent layer above described emitter, be provided with glass plate above described phosphorescent layer, described glass plate, substrate, side plate form enclosed construction.The utility model structure is simple, cheap for manufacturing cost, emissivity is high, brightness uniformity.
Description
Technical field
The utility model relates to semiconductor applications, particularly relates to a kind of semiconductor laser.
Background technology
Field emission electrode theory is jointly proposed by R.H.Eowler and L.W.Nordheim in nineteen twenty-eight the earliest, but really go out field emission electrode element with manufacture of semiconductor technical research, open and use field emission electron as display technology, be then proposed by C.A.Spindt in nineteen sixty-eight, attract follow-up researcher to drop into research and development subsequently.
At present, semiconductor laser replaces conventional cathode transmitting tube becomes inexorable trend, but semiconductor laser still faces problems, such as the problem such as complex structure, encapsulation difficulty, manufacturing cost is high, emissivity is low, brightness irregularities.
Utility model content
Technical problem to be solved in the utility model is to provide that a kind of structure is simple, cheap for manufacturing cost, emissivity is high, the semiconductor laser of brightness uniformity.
The technical scheme that the utility model solves the problems of the technologies described above is as follows: a kind of semiconductor laser, comprise substrate, described surface is provided with negative electrode, described negative electrode two ends are respectively arranged with insulator, described insulator is provided with grid, between described grid, negative electrode upper center is provided with emitter, electron emission pointed cone is respectively arranged with between described emitter and grid, phosphorescent layer is provided with above described emitter, be provided with glass plate above described phosphorescent layer, described glass plate, substrate, side plate form enclosed construction.
Outside to semiconductor laser applying high pressure, impel between laser internal gate and emitter and form high voltage electric field, described high voltage electric field excitation electron is launched pointed cone and is produced high-power electron beam, described high-power electron beam is beaten in phosphorescent layer, and described phosphorescent layer electronics, hole high velocity impact occur and produce fluorescent effect.
On the basis of technique scheme, the utility model can also do following improvement.
Further, described semiconductor laser inside is in high vacuum state, prevents semiconductor laser from hyperbaric environment, producing ionization.
Further, described electron emission pointed cone is two or more, and described multiple electron emission pointed cone contributes to shortening firing time in semiconductor laser, improves emissivity.
Further, described side plate is metal material, be conducive to formation and the protection of high voltage electric field, and metal material is conducive to the heat radiation of semiconductor laser.
The beneficial effects of the utility model are: structure is simple, cheap for manufacturing cost, emissivity is high, brightness uniformity.
Accompanying drawing explanation
Fig. 1 is a kind of semiconductor laser apparatus structural representation of the utility model;
In accompanying drawing, the list of parts representated by each label is as follows: 1, glass plate, and 2, phosphorescent layer, 3, grid, 4, insulator, 5, electron emission pointed cone, 6, emitter, 7, substrate, 8, negative electrode, 9, side plate.
Embodiment
Be described principle of the present utility model and feature below in conjunction with accompanying drawing, example, only for explaining the utility model, is not intended to limit scope of the present utility model.
As shown in Figure 1, a kind of semiconductor laser, comprise substrate 7, negative electrode 8 is provided with above described substrate 7, described negative electrode 8 two ends are respectively arranged with insulator 4, described insulator 4 is provided with grid 3, between described grid 3, negative electrode 8 upper center is provided with emitter 6, electron emission pointed cone 5 is respectively arranged with between described emitter 6 and grid 3, be provided with phosphorescent layer 2 above described emitter 6, be provided with glass plate 1 above described phosphorescent layer 2, described glass plate 1, substrate 7, side plate 9 form enclosed construction.
Outside to semiconductor laser applying high pressure, impel between laser internal gate 3 and emitter 6 and form high voltage electric field, described high voltage electric field excitation electron is launched pointed cone 5 and is produced high-power electron beam, described high-power electron beam is beaten in phosphorescent layer 2, and described phosphorescent layer 2 electronics, hole high velocity impact occur and produce fluorescent effect.
Described semiconductor laser inside is in high vacuum state, prevents semiconductor laser from hyperbaric environment, producing ionization; Described electron emission pointed cone 5 is two or more, and described multiple electron emission pointed cone 5 contributes to shortening firing time in semiconductor laser, improves emissivity; Described side plate 9 is metal material, be conducive to formation and the protection of high voltage electric field, and metal material is conducive to the heat radiation of semiconductor laser.
The foregoing is only preferred embodiment of the present utility model, not in order to limit the utility model, all within spirit of the present utility model and principle, any amendment done, equivalent replacement, improvement etc., all should be included within protection range of the present utility model.
Claims (4)
1. a semiconductor laser, it is characterized in that, comprise substrate, described surface is provided with negative electrode, described negative electrode two ends are respectively arranged with insulator, described insulator is provided with grid, and between described grid, negative electrode upper center is provided with emitter, electron emission pointed cone is respectively arranged with between described emitter and grid, be provided with phosphorescent layer above described emitter, be provided with glass plate above described phosphorescent layer, described glass plate, substrate, side plate form enclosed construction.
2. a kind of semiconductor laser according to claim 1, it is characterized in that, described semiconductor laser inside is in high vacuum state.
3. a kind of semiconductor laser according to claim 1, it is characterized in that, described electron emission pointed cone is two or more.
4. a kind of semiconductor laser according to claim 1, it is characterized in that, described side plate is metal material.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201420576077.9U CN204130903U (en) | 2014-09-30 | 2014-09-30 | A kind of semiconductor laser |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201420576077.9U CN204130903U (en) | 2014-09-30 | 2014-09-30 | A kind of semiconductor laser |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN204130903U true CN204130903U (en) | 2015-01-28 |
Family
ID=52387225
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201420576077.9U Expired - Fee Related CN204130903U (en) | 2014-09-30 | 2014-09-30 | A kind of semiconductor laser |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN204130903U (en) |
-
2014
- 2014-09-30 CN CN201420576077.9U patent/CN204130903U/en not_active Expired - Fee Related
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| C14 | Grant of patent or utility model | ||
| GR01 | Patent grant | ||
| CF01 | Termination of patent right due to non-payment of annual fee |
Granted publication date: 20150128 Termination date: 20150930 |
|
| EXPY | Termination of patent right or utility model |