CN100487852C - Integrated stripe type cathode array structural panel display device and its production technique - Google Patents
Integrated stripe type cathode array structural panel display device and its production technique Download PDFInfo
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- CN100487852C CN100487852C CNB2006100485332A CN200610048533A CN100487852C CN 100487852 C CN100487852 C CN 100487852C CN B2006100485332 A CNB2006100485332 A CN B2006100485332A CN 200610048533 A CN200610048533 A CN 200610048533A CN 100487852 C CN100487852 C CN 100487852C
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Abstract
The invention relates to a plate display in integrated pattern cathode array emission structure and relative production, wherein it comprises an anode glass panel, a cathode glass panel, and a sealing vacuum chamber surrounded by four glass frames; the anode glass panel is arranged with anode conductive layer and a fluorescent powder layer is above the conductive layer; a support wall structure and a gattering additional element are between the anode glass panel and the cathode glass panel; a control grid, a carbon nanometer tube cathode and integrated pattern cathode array emission structure are arranged on the cathode glass panel. The invention can effectively increase the field activated emission area of carbon nanometer tube, and use glass as insulated structure between grid and cathode to strengthen the insulated property, with lower cost and simple structure.
Description
Technical field
The invention belongs to the mutual crossing domain in Display Technique field, plane, Electronics Science and Technology field, vacuum science and technical field, integrated circuit science and technology field and nanometer science and technology field, relate to the element manufacturing of panel field emission display, be specifically related to the content of element manufacturing aspect of the panel field emission display of carbon nanotube cathod, specially refer to the element manufacturing and the manufacture craft thereof that have field emission flat-panel display integrated stripe type cathode array structural, carbon nanotube cathod.
Background technology
Display device is a kind of crucial man-machine communication interface, has occupied indispensable status in the high speed development process of information technology.Wherein, flat-panel monitor has become the direction of Display Technique field development in recent years with advantages such as its high definition, high image quality, complete panelized and wide visual angles.Carbon nano-tube has little tip curvature radius, high aspect rate and good physicochemical characteristics, and high mechanical strength has caused showing great attention to of numerous scientific research personnel.When applying appropriate voltage on the carbon nano-tube top, carbon nano-tube can be launched a large amount of electronics, forms unique field emission phenomenon.Is a kind of novel planar device and utilize carbon nano-tube as the flat-panel monitor of cathode material, it rolls into one the high image quality of CRT, the ultrathin type of LCD and the advantages such as large tracts of land of plasma scope, it is used more and more widely, has bigger development space future.
In the middle of the carbon nanotube cathod field emission flat-panel display of three-stage structure, the control gate electrode structure is one of element of comparison key, and it plays very necessary control effect to the electronics emission of carbon nanotube cathod.The thickness of the insulating barrier between grid and the carbon nanotube cathod will approach on the one hand, could shorten the distance between control grid and the negative electrode so as much as possible, so that the grid operating voltage of more effective reduction flat device; Insulating barrier between grid and the carbon nanotube cathod will have enough dielectric strengths on the other hand, is used to resist the strong electric field intensity on carbon nano-tube top.What is more important will be considered the manufacturing materials and the manufacture craft feasibility of this insulation system.First, because grid structure will be in the middle of the vacuum fully, so the insulating barrier manufacturing materials will be adapted to the requirement of vacuum environment, can not discharge a large amount of gas; Second, this insulating layer material is wanted to bear certain temperature, so that be that last glass sintering encapsulates the condition that facilitates.Three, this insulating barrier also wants to have the feasibility of large-area manufacturing.Also will satisfy technical requirements such as low cost simultaneously, these all are the realistic problems that is worth thinking and research.
In the process of carbon nanotube cathod emitting electrons, it is maximum to be positioned at carbon nanotube cathod marginal position electrons emitted, the electric field strength that its surface forms is also maximum, middle position electrons emitted at carbon nanotube cathod then will be lacked relatively, perhaps emitting electrons not, this just unique marginal position is launched a large amount of electronics phenomenons.Is so how making full use of this unique phenomenon, better to make the service of new display spare? this is the realistic problem that the researcher is worth thinking.
In addition, in the middle of the panel field emission display spare of three-stage structure, under the prerequisite of guaranteeing the integral device excellent picture quality, also to reduce the total device cost as much as possible, carry out reliable and stable, with low cost, function admirable, high quality devices is made.
Summary of the invention
The objective of the invention is to overcome the shortcoming and defect that exists in the above-mentioned flat-panel display device and provide a kind of with low cost, manufacturing process is reliable and stable, be made into the power height, flat-panel display device that has integrated stripe type cathode array structural and manufacture craft thereof simple in structure.
The object of the present invention is achieved like this: a kind of flat-panel monitor of integrated stripe type cathode array structural, comprise by cathode glass faceplate, anode glass panel and all around glass enclose the sealed vacuum chamber that frame constitutes; Anode conductive layer and the phosphor powder layer of preparation on anode conductive layer are arranged on the anode glass panel; Supporting wall structure between anode glass panel and cathode glass faceplate and getter subsidiary component have control grid, carbon nanotube cathod and integrated stripe type cathode array structural on cathode glass faceplate.
The backing material of described integrated stripe type cathode array structural is a glass, just the cathode glass faceplate of display device; The target face glass carries out etching, forms striated structure; But striated structure is a repeated arrangement; The width of the jut of striated structure and sunk part is inequality in a longitudinal direction, and jut is narrower than sunk part; The width of same striated structure also is inconsistent on transversary, and wide part forms an elliptical shape, and narrow part is positioned in the middle of two elliptical shapes, makes two elliptical shapes be interconnected; Be parallel and interlaced arrangement between the adjacent stripes; There is a grid conducting layer in the bottom of the sunk part of striated structure; Grid cover layer of the top existence of grid conducting layer; The tectal thickness of grid is uneven, and the tectal thickness of grid that is arranged in the narrow part of striated structure is thick, and the tectal thickness of grid that is arranged in the wide part of striated structure will approach; Cathode conductive layer of the top existence of the jut of striated structure; The top of gate insulator that cathode conductive layer is crossed the narrow part of striated structure connects together; There is carbon nano-tube above the cathode conductive layer; Carbon nano-tube is positioned on the cathode conductive layer, but is not all discontented cathode conductive layer, but be looped around the ellipse striated structure around, remaining zone does not then have carbon nano-tube.
The fixed position of described integrated stripe type cathode array structural is for being fixed on the cathode glass faceplate, and grid structure and cathode construction are integrated together, grid is positioned at the below of carbon nano-tube, controlling the electronics emission of carbon nano-tube, grid conducting layer is tin indium oxide rete or is metal gold, silver, molybdenum, tin, aluminium, chromium, the grid cover layer is silicon dioxide layer, polyimide layer or insulation paste layer, cathode conductive layer is metal gold, silver, tin, chromium, molybdenum, and the trend of cathode conductive layer and the trend of grid conducting layer are orthogonal.
A kind of manufacture craft of flat-panel monitor of integrated stripe type cathode array structural, its manufacture craft is as follows:
1) making of cathode glass faceplate: whole plate glass is carried out scribing, produce cathode glass faceplate;
2) making of striated structure: the target face glass carries out etching, forms striated structure;
3) making of grid conducting layer: bottom evaporation one deck tin indium oxide rete or metal on cathode glass faceplate in the striated structure form grid conducting layer after the etching;
4) the tectal making of grid: on grid conducting layer, prepare a silicon dioxide layer, polyimide layer or insulation paste layer, form the grid cover layer after the etching;
5) making of cathode conductive layer: evaporation layer of metal on cathode glass faceplate forms cathode conductive layer after the etching;
6) cleaning surfaces of cathode glass faceplate is handled: clean is carried out on the surface of target face glass, removes impurity and dust;
7) making of carbon nano-tube: with made of carbon nanotubes on cathode conductive layer;
8) making of anode glass panel: whole plate glass is carried out scribing, produce the anode glass panel;
9) making of anode conductive layer: evaporation one deck tin indium oxide rete on the anode glass panel; Form anode conductive layer after the etching;
10) making of insulating barrier: at the non-display area printing insulation paste layer of anode conductive layer;
11) making of phosphor powder layer: the viewing area printing phosphor powder layer on anode conductive layer;
12) device assembling: cathode glass faceplate, anode glass panel, supporting wall structure and glass are enclosed frame [12] be assembled together, and getter is put in the middle of the cavity, fix with glass powder with low melting point;
13) finished product is made: the device that has assembled is carried out packaging technology form finished parts.
Described step 2 is specially the target face glass and carries out etching, forms striated structure; Striated structure is a repeated arrangement; The width of the jut of striated structure and sunk part is inequality in a longitudinal direction, and jut is narrower than sunk part; The width of same striated structure also is inconsistent on transversary, and wide part forms an elliptical shape, and narrow part is positioned in the middle of two elliptical shapes, makes two elliptical shapes be interconnected; Be parallel and interlaced arrangement between the adjacent stripes structure.
Described step 4 is specially prepares a silicon dioxide layer, polyimide layer or insulation paste layer on grid conducting layer, form the grid cover layer after the etching; The tectal thickness of grid is uneven, and the tectal thickness of grid that is arranged in the narrow part of striated structure is thick, and the tectal thickness of grid that is arranged in the wide part of striated structure will approach; But the grid cover layer is wanted complete cover grid conductive layer.
Described step 5 is specially evaporation layer of metal on cathode glass faceplate, forms cathode conductive layer after the etching; Cathode conductive layer be positioned at striated structure jut above; The trend of cathode conductive layer and the trend of grid conducting layer are orthogonal; The top of gate insulator that cathode conductive layer is crossed the narrow part of striated structure connects together; Adjacent cathode conductive layer is arranged parallel to each other.
Described step 7 is specially made of carbon nanotubes on cathode conductive layer; Carbon nano-tube is positioned on the cathode conductive layer, but is not all discontented cathode conductive layer, but be looped around the ellipse striated structure around, remaining zone does not then have carbon nano-tube.
Described step 10 is specially the non-display area printing insulation paste layer at anode conductive layer, is used to prevent the parasitic electrons emission; Through overbaking, baking temperature: 150 ℃, the retention time: 5 minutes, afterwards, be placed on and carry out high temperature sintering in the sintering furnace, sintering temperature: 580 ℃, the retention time: 10 minutes.
Described step 11 is specially the viewing area printing phosphor powder layer on anode conductive layer; In the middle of baking oven, toast baking temperature: 120 ℃, the retention time: 10 minutes.
The device that described step 13 is specially having assembled carries out following packaging technology: toast in the middle of the sample device is put into baking oven; Carry out high temperature sintering in the middle of putting into sintering furnace; On exhaust station, carry out device exhaust, sealed-off, on the roasting machine that disappears, the getter of device inside bake and disappears, install pin formation finished parts at last additional.
The present invention has following good effect:
At first, the grid structure in the integrated stripe type cathode array structural in the present invention be positioned at carbon nanotube cathod below, emission plays strong control action to the electronics of carbon nanotube cathod.When after applying appropriate voltage on the grid, the carbon nano-tube top will form powerful electric field strength, forces carbon nano-tube to launch a large amount of electronics; Because carbon nanotube cathod institute electrons emitted directly arrives anode without grid structure, this has also just reduced the probability of grid structure traps electrons, helps further reducing grid current, strengthens the display brightness of integral device;
Secondly, in the integrated stripe type cathode array structural in the present invention, carbon nanotube cathod be positioned at cathode conductive layer above, and present a kind of ellipse distribution of shapes around grid structure, so just when further reducing grid voltage, can also increase the emission area of carbon nanotube cathod effectively, further improve the emission of negative electrode; Simultaneously, also effectively utilized marginal position to launch a large amount of electronics phenomenons;
The 3rd, in the integrated stripe type cathode array structural in the present invention, rely on glass to keep apart mutually between grid structure and the carbon nanotube cathod.Because glass has very good insulation performance performance, can not cause the generation of grid and carbon nanotube cathod short circuit phenomenon between the two, greatly improved the power that is made into of integral device;
In addition, in the integrated stripe type cathode array structural in the present invention, do not adopt special structure fabrication material, do not adopt special device making technics yet, this has just further reduced the cost of manufacture of whole flat-panel display device to a great extent, simplify the manufacturing process of device, can carry out large-area element manufacturing, helped carrying out business-like large-scale production.
Description of drawings
Fig. 1 has provided the vertical structure schematic diagram of integrated stripe type cathode array structural;
Fig. 2 has provided the transversary schematic diagram of integrated stripe type cathode array structural;
Fig. 3 has provided and has had structural representation integrated stripe type cathode array structural, the carbon nanotube field emission flat-panel screens.
Embodiment
Below in conjunction with drawings and Examples the present invention is further specified, but the present invention is not limited to these embodiment.
Described a kind of flat-panel monitor that has integrated stripe type cathode array structural, comprise by cathode glass faceplate [1], anode glass panel [7] and all around glass enclose the sealed vacuum chamber that frame [12] is constituted; Anode conductive layer [8] and the phosphor powder layer [10] of preparation on anode conductive layer are arranged on the anode glass panel; Supporting wall structure between anode glass panel and cathode glass faceplate [11] and getter [13] subsidiary component.Control grid [3], carbon nanotube cathod [6] and integrated stripe type cathode array structural are arranged on cathode glass faceplate.Described integrated stripe type cathode array structural comprises cathode glass faceplate [1], striated structure [2], grid conducting layer [3], grid cover layer [4], cathode conductive layer [5] and carbon nanotube cathod [6] part.
The backing material of described integrated stripe type cathode array structural is a glass, as soda-lime glass, Pyrex, and the cathode glass faceplate of display device [1] just; The target face glass carries out etching, forms striated structure [2]; But striated structure is a repeated arrangement; The width of the jut of striated structure and sunk part is inequality in a longitudinal direction, and jut is narrower than sunk part; The width of same striated structure also is inconsistent on transversary, and wide part forms an elliptical shape, and narrow part is positioned in the middle of two elliptical shapes, makes two elliptical shapes be interconnected; Be parallel and interlaced arrangement between the adjacent stripes; There is a grid conducting layer [3] in the bottom of the sunk part of striated structure; A grid cover layer of the top existence of grid conducting layer [4]; The thickness of grid cover layer [4] is uneven, and the tectal thickness of grid that is arranged in the narrow part of striated structure is thick, and the tectal thickness of grid that is arranged in the wide part of striated structure will approach; A cathode conductive layer of the top existence of the jut of striated structure [5]; The top of gate insulator that cathode conductive layer is crossed the narrow part of striated structure connects together; There is carbon nano-tube [6] above the cathode conductive layer; Carbon nano-tube is positioned on the cathode conductive layer, but is not all discontented cathode conductive layer, but be looped around the ellipse striated structure around, remaining zone does not then have carbon nano-tube.
The fixed position of described integrated stripe type cathode array structural is for being fixed on the cathode glass faceplate, and grid structure and cathode construction be integrated together, and grid is positioned at the below of carbon nano-tube, is controlling the electronics emission of carbon nano-tube.Grid conducting layer can be tin indium oxide rete, also can be metallic gold, silver, molybdenum, tin, aluminium, chromium.The grid cover layer can be silicon dioxide layer, polyimide layer, insulation paste layer.Cathode conductive layer can be metallic gold, silver, tin, chromium, molybdenum.The trend of cathode conductive layer and the trend of grid conducting layer are orthogonal.
A kind of manufacture craft that has the flat-panel monitor of integrated stripe type cathode array structural, its manufacture craft is as follows:
1) making of cathode glass faceplate [1]: the dull and stereotyped soda-lime glass of integral body is carried out scribing, produce cathode glass faceplate;
2) making of striated structure [2]: the target face glass carries out etching, forms striated structure;
3) making of grid conducting layer [3]: the bottom evaporation layer of metal chromium on cathode glass faceplate in the striated structure forms grid conducting layer after the etching;
4) making of grid cover layer [4]: on grid conducting layer, prepare a polyimide layer, form the grid cover layer after the etching;
5) making of cathode conductive layer [5]: evaporation layer of metal molybdenum on cathode glass faceplate forms cathode conductive layer after the etching;
6) cleaning surfaces of cathode glass faceplate is handled: clean is carried out on the surface of target face glass, removes impurity and dust;
7) making of carbon nano-tube [6]: with made of carbon nanotubes on cathode conductive layer;
8) making of anode glass panel [7]: whole sodium calcium plate glass is carried out scribing, produce the anode glass panel;
9) making of anode conductive layer [8]: evaporation one deck tin indium oxide rete on the anode glass panel; Form anode conductive layer after the etching;
10) making of insulating barrier [9]: at the non-display area printing insulation paste layer of anode conductive layer;
11) making of phosphor powder layer [10]: the viewing area printing phosphor powder layer on anode conductive layer;
12) device assembling: cathode glass faceplate, anode glass panel, supporting wall structure [11] and glass are enclosed frame [12] be assembled together, and getter [13] is put in the middle of the cavity, fix with glass powder with low melting point.Around face glass, smeared glass powder with low melting point, fixed with clip;
13) finished product is made: the device that has assembled is carried out packaging technology form finished parts.
Described step 2 is specially the target face glass and carries out etching, forms striated structure; But striated structure is a repeated arrangement; The width of the jut of striated structure and sunk part is inequality in a longitudinal direction, and jut is narrower than sunk part; The width of same striated structure also is inconsistent on transversary, and wide part forms an elliptical shape, and narrow part is positioned in the middle of two elliptical shapes, makes two elliptical shapes be interconnected; Be parallel and interlaced arrangement between the adjacent stripes structure.
Described step 4 is specially prepares a polyimide layer on grid conducting layer, form the grid cover layer after the etching; The tectal thickness of grid is uneven, and the tectal thickness of grid that is arranged in the narrow part of striated structure is thick, and the tectal thickness of grid that is arranged in the wide part of striated structure will approach; But the grid cover layer is wanted complete cover grid conductive layer.
Described step 5 is specially evaporation layer of metal molybdenum on cathode glass faceplate, forms cathode conductive layer after the etching; Cathode conductive layer be positioned at striated structure jut above; The trend of cathode conductive layer and the trend of grid conducting layer are orthogonal; The top of gate insulator that cathode conductive layer is crossed the narrow part of striated structure connects together; Adjacent cathode conductive layer is arranged parallel to each other.
Described step 7 is specially made of carbon nanotubes on cathode conductive layer; Carbon nano-tube is positioned on the cathode conductive layer, but is not all discontented cathode conductive layer, but be looped around the ellipse striated structure around, remaining zone does not then have carbon nano-tube.
Described step 10 is specially the non-display area printing insulation paste layer at anode conductive layer, is used to prevent the parasitic electrons emission; Through overbaking (baking temperature: 150 ℃, retention time: 5 minutes) afterwards, be placed on and carry out high temperature sintering (sintering temperature: 580 ℃, retention time: 10 minutes) in the sintering furnace.
Described step 11 is specially the viewing area printing phosphor powder layer on anode conductive layer; In the middle of baking oven, toast (baking temperature: 120 ℃, the retention time: 10 minutes).
The device that described step 13 is specially having assembled carries out following packaging technology: toast in the middle of the sample device is put into baking oven; Carry out high temperature sintering in the middle of putting into sintering furnace; On exhaust station, carry out device exhaust, sealed-off, on the roasting machine that disappears, the getter of device inside bake and disappears, install pin formation finished parts at last additional.
Claims (5)
1, a kind of flat-panel monitor of integrated stripe type cathode array structural, comprise by cathode glass faceplate [1], anode glass panel [7] and all around glass enclose the sealed vacuum chamber that frame [12] is constituted; Anode conductive layer [8] and the phosphor powder layer [10] of preparation on anode conductive layer are arranged on the anode glass panel; Supporting wall structure between anode glass panel and cathode glass faceplate [11] and getter subsidiary component [13] is characterized in that:
Control grid [3], carbon nanotube cathod [6] and integrated stripe type cathode array structural are arranged on cathode glass faceplate;
The backing material of described integrated stripe type cathode array structural is a glass, just the cathode glass faceplate of display device [1]; The target face glass carries out etching, forms striated structure [2]; Striated structure is a repeated arrangement; The width of the jut of striated structure and sunk part is inequality in a longitudinal direction, and jut is narrower than sunk part; The width of same striated structure also is inconsistent on transversary, and wide part forms an elliptical shape, and narrow part is positioned in the middle of two elliptical shapes, makes two elliptical shapes be interconnected; Be parallel and interlaced arrangement between the adjacent stripes; There is a grid conducting layer [3] in the bottom of the sunk part of striated structure; A grid cover layer of the top existence of grid conducting layer [4]; The thickness of grid cover layer [4] is uneven, and the tectal thickness of grid that is arranged in the narrow part of striated structure is thick, and the tectal thickness of grid that is arranged in the wide part of striated structure will approach; A cathode conductive layer of the top existence of the jut of striated structure [5]; The top of gate insulator that cathode conductive layer is crossed the narrow part of striated structure connects together; There is carbon nano-tube [6] above the cathode conductive layer; Carbon nano-tube is positioned on the cathode conductive layer, but is not all to be covered with cathode conductive layer, but be looped around the ellipse striated structure around, remaining zone does not then have carbon nano-tube;
The fixed position of described integrated stripe type cathode array structural is for being fixed on the cathode glass faceplate, and grid structure and cathode construction be integrated together, and grid is positioned at the below of carbon nano-tube, is controlling the electronics emission of carbon nano-tube.
2, the flat-panel monitor of integrated stripe type cathode array structural according to claim 1, it is characterized in that: grid conducting layer is tin indium oxide rete or is one of metal gold, silver, molybdenum, tin, aluminium, chromium, the grid cover layer is silicon dioxide layer, polyimide layer or insulation paste layer, cathode conductive layer is one of metal gold, silver, tin, chromium, molybdenum, and the trend of cathode conductive layer and the trend of grid conducting layer are orthogonal.
3, a kind of manufacture craft of flat-panel monitor of integrated stripe type cathode array structural, it is characterized in that its manufacture craft is as follows: grid structure and cathode construction are integrated together, and grid is positioned at the below of carbon nano-tube, controlling the electronics emission of carbon nano-tube, specific as follows:
1) making of cathode glass faceplate [1]: whole plate glass is carried out scribing, produce cathode glass faceplate;
2) making of striated structure [2]: the target face glass carries out etching, forms striated structure; Striated structure is a repeated arrangement; The width of the jut of striated structure and sunk part is inequality in a longitudinal direction, and jut is narrower than sunk part; The width of same striated structure also is inconsistent on transversary, and wide part forms an elliptical shape, and narrow part is positioned in the middle of two elliptical shapes, makes two elliptical shapes be interconnected; Be parallel and interlaced arrangement between the adjacent stripes structure;
3) making of grid conducting layer [3]: bottom evaporation one deck tin indium oxide rete or metal on cathode glass faceplate in the striated structure form grid conducting layer after the etching;
4) making of grid cover layer [4]: on grid conducting layer, prepare a silicon dioxide layer, polyimide layer or insulation paste layer, form the grid cover layer after the etching; The tectal thickness of grid is uneven, and the tectal thickness of grid that is arranged in the narrow part of striated structure is thick, and the tectal thickness of grid that is arranged in the wide part of striated structure will approach; But the grid cover layer is wanted complete cover grid conductive layer;
5) making of cathode conductive layer [5]: evaporation layer of metal on cathode glass faceplate forms cathode conductive layer after the etching; Cathode conductive layer be positioned at striated structure jut above; The trend of cathode conductive layer and the trend of grid conducting layer are orthogonal; The top of gate insulator that cathode conductive layer is crossed the narrow part of striated structure connects together; Adjacent cathode conductive layer is arranged parallel to each other;
6) cleaning surfaces of cathode glass faceplate is handled: clean is carried out on the surface of target face glass, removes impurity and dust;
7) making of carbon nano-tube [6]: with made of carbon nanotubes on cathode conductive layer; Carbon nano-tube is positioned on the cathode conductive layer, but is not all to be covered with cathode conductive layer, but be looped around the ellipse striated structure around, remaining zone does not then have carbon nano-tube;
8) making of anode glass panel [7]: whole plate glass is carried out scribing, produce the anode glass panel;
9) making of anode conductive layer [8]: evaporation one deck tin indium oxide rete on the anode glass panel; Form anode conductive layer after the etching;
10) making of insulating barrier [9]: at the non-display area printing insulation paste layer of anode conductive layer;
11) making of phosphor powder layer [10]: the viewing area printing phosphor powder layer on anode conductive layer;
12) device assembling: cathode glass faceplate, anode glass panel, supporting wall structure [11] and glass are enclosed frame [12] be assembled together, and getter [13] is put in the middle of the cavity, fix with glass powder with low melting point;
13) finished product is made: the device that has assembled is carried out packaging technology form finished parts.
4, the manufacture craft of the flat-panel monitor of integrated stripe type cathode array structural according to claim 3 is characterized in that: described step 10 is specially the non-display area printing insulation paste layer at anode conductive layer, is used to prevent the parasitic electrons emission; Through overbaking, baking temperature: 150 ℃, the retention time: 5 minutes, afterwards, be placed on and carry out high temperature sintering in the sintering furnace, sintering temperature: 580 ℃, the retention time: 10 minutes.
5, the manufacture craft of the flat-panel monitor of integrated stripe type cathode array structural according to claim 3 is characterized in that: described step 11 is specially the viewing area printing phosphor powder layer on anode conductive layer; In the middle of baking oven, toast baking temperature: 120 ℃, the retention time: 10 minutes.
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| CN102768930B (en) * | 2010-12-29 | 2015-03-11 | 清华大学 | Field emission electron device |
| CN102087947B (en) | 2010-12-29 | 2013-04-24 | 清华大学 | Field-emission electronic device |
| CN102082061B (en) * | 2010-12-29 | 2013-06-05 | 清华大学 | Field emission display device |
| CN102082062B (en) | 2010-12-29 | 2013-03-06 | 清华大学 | Field emission display device |
| CN102243974B (en) * | 2011-05-25 | 2014-03-12 | 中山大学 | Field emission display structure for realizing pixel unit addressing by utilizing two groups of gate electrodes |
| CN102324351A (en) * | 2011-09-07 | 2012-01-18 | 郑州航空工业管理学院 | Novel carbon nano tube field emission cold cathode and manufacturing method thereof |
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