CN104242049A - Semiconductor laser - Google Patents
Semiconductor laser Download PDFInfo
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- CN104242049A CN104242049A CN201410532984.8A CN201410532984A CN104242049A CN 104242049 A CN104242049 A CN 104242049A CN 201410532984 A CN201410532984 A CN 201410532984A CN 104242049 A CN104242049 A CN 104242049A
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- semiconductor laser
- negative electrode
- emitter
- substrate
- grid
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Abstract
The invention relates to a semiconductor laser which comprises a substrate. A negative electrode is arranged above the substrate; insulators are arranged at two ends of the negative electrode respectively and provided with grids; an emitter electrode is arranged at the center above the negative electrode; electronic emission cones are respectively arranged between the emitter electrode and the grids; a phosphor coating is arranged above the emitter electrode, a glass sheet is arranged above the phosphor coating, and the glass sheet, the substrate and side plates form a closed structure. The semiconductor laser is simple in structure, low in manufacturing cost, high in emissivity and uniform in brightness.
Description
Technical field
The present invention relates to semiconductor applications, particularly relate to a kind of semiconductor laser.
Background technology
Field emission electrode theory is jointly proposed by R.H.Eowler and L.W.Nordheim in nineteen twenty-eight the earliest, but really go out field emission electrode element with manufacture of semiconductor technical research, open and use field emission electron as display technology, be then proposed by C.A.Spindt in nineteen sixty-eight, attract follow-up researcher to drop into research and development subsequently.
At present, semiconductor laser replaces conventional cathode transmitting tube becomes inexorable trend, but semiconductor laser still faces problems, such as the problem such as complex structure, encapsulation difficulty, manufacturing cost is high, emissivity is low, brightness irregularities.
Summary of the invention
Technical problem to be solved by this invention is to provide that a kind of structure is simple, cheap for manufacturing cost, emissivity is high, the semiconductor laser of brightness uniformity.
The technical scheme that the present invention solves the problems of the technologies described above is as follows: a kind of semiconductor laser, comprise substrate, described surface is provided with negative electrode, described negative electrode two ends are respectively arranged with insulator, described insulator is provided with grid, between described grid, negative electrode upper center is provided with emitter, electron emission pointed cone is respectively arranged with between described emitter and grid, phosphorescent layer is provided with above described emitter, be provided with glass plate above described phosphorescent layer, described glass plate, substrate, side plate form enclosed construction.
Outside to semiconductor laser applying high pressure, impel between laser internal gate and emitter and form high voltage electric field, described high voltage electric field excitation electron is launched pointed cone and is produced high-power electron beam, described high-power electron beam is beaten in phosphorescent layer, and described phosphorescent layer electronics, hole high velocity impact occur and produce fluorescent effect.
On the basis of technique scheme, the present invention can also do following improvement.
Further, described semiconductor laser inside is in high vacuum state, prevents semiconductor laser from hyperbaric environment, producing ionization.
Further, described electron emission pointed cone is two or more, and described multiple electron emission pointed cone contributes to shortening firing time in semiconductor laser, improves emissivity.
Further, described side plate is metal material, be conducive to formation and the protection of high voltage electric field, and metal material is conducive to the heat radiation of semiconductor laser.
The invention has the beneficial effects as follows: structure is simple, cheap for manufacturing cost, emissivity is high, brightness uniformity.
Accompanying drawing explanation
Fig. 1 is a kind of semiconductor laser apparatus structural representation of the present invention;
In accompanying drawing, the list of parts representated by each label is as follows: 1, glass plate, and 2, phosphorescent layer, 3, grid, 4, insulator, 5, electron emission pointed cone, 6, emitter, 7, substrate, 8, negative electrode, 9, side plate.
Embodiment
Be described principle of the present invention and feature below in conjunction with accompanying drawing, example, only for explaining the present invention, is not intended to limit scope of the present invention.
As shown in Figure 1, a kind of semiconductor laser, comprise substrate 7, negative electrode 8 is provided with above described substrate 7, described negative electrode 8 two ends are respectively arranged with insulator 4, described insulator 4 is provided with grid 3, between described grid 3, negative electrode 8 upper center is provided with emitter 6, electron emission pointed cone 5 is respectively arranged with between described emitter 6 and grid 3, be provided with phosphorescent layer 2 above described emitter 6, be provided with glass plate 1 above described phosphorescent layer 2, described glass plate 1, substrate 7, side plate 9 form enclosed construction.
Outside to semiconductor laser applying high pressure, impel between laser internal gate 3 and emitter 6 and form high voltage electric field, described high voltage electric field excitation electron is launched pointed cone 5 and is produced high-power electron beam, described high-power electron beam is beaten in phosphorescent layer 2, and described phosphorescent layer 2 electronics, hole high velocity impact occur and produce fluorescent effect.
Described semiconductor laser inside is in high vacuum state, prevents semiconductor laser from hyperbaric environment, producing ionization; Described electron emission pointed cone 5 is two or more, and described multiple electron emission pointed cone 5 contributes to shortening firing time in semiconductor laser, improves emissivity; Described side plate 9 is metal material, be conducive to formation and the protection of high voltage electric field, and metal material is conducive to the heat radiation of semiconductor laser.
The foregoing is only preferred embodiment of the present invention, not in order to limit the present invention, within the spirit and principles in the present invention all, any amendment done, equivalent replacement, improvement etc., all should be included within protection scope of the present invention.
Claims (4)
1. a semiconductor laser, it is characterized in that, comprise substrate, described surface is provided with negative electrode, described negative electrode two ends are respectively arranged with insulator, described insulator is provided with grid, and between described grid, negative electrode upper center is provided with emitter, electron emission pointed cone is respectively arranged with between described emitter and grid, be provided with phosphorescent layer above described emitter, be provided with glass plate above described phosphorescent layer, described glass plate, substrate, side plate form enclosed construction.
2. a kind of semiconductor laser according to claim 1, it is characterized in that, described semiconductor laser inside is in high vacuum state.
3. a kind of semiconductor laser according to claim 1, it is characterized in that, described electron emission pointed cone is two or more.
4. a kind of semiconductor laser according to claim 1, it is characterized in that, described side plate is metal material.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201410532984.8A CN104242049A (en) | 2014-09-30 | 2014-09-30 | Semiconductor laser |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201410532984.8A CN104242049A (en) | 2014-09-30 | 2014-09-30 | Semiconductor laser |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN104242049A true CN104242049A (en) | 2014-12-24 |
Family
ID=52229653
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201410532984.8A Pending CN104242049A (en) | 2014-09-30 | 2014-09-30 | Semiconductor laser |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN104242049A (en) |
-
2014
- 2014-09-30 CN CN201410532984.8A patent/CN104242049A/en active Pending
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| C06 | Publication | ||
| PB01 | Publication | ||
| WD01 | Invention patent application deemed withdrawn after publication |
Application publication date: 20141224 |
|
| WD01 | Invention patent application deemed withdrawn after publication |