CN104576267B - A kind of surface-conduction electron emission source structure and preparation method thereof - Google Patents
A kind of surface-conduction electron emission source structure and preparation method thereof Download PDFInfo
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- CN104576267B CN104576267B CN201510036036.XA CN201510036036A CN104576267B CN 104576267 B CN104576267 B CN 104576267B CN 201510036036 A CN201510036036 A CN 201510036036A CN 104576267 B CN104576267 B CN 104576267B
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J29/00—Details of cathode-ray tubes or of electron-beam tubes of the types covered by group H01J31/00
- H01J29/02—Electrodes; Screens; Mounting, supporting, spacing or insulating thereof
- H01J29/04—Cathodes
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J9/00—Apparatus or processes specially adapted for the manufacture, installation, removal, maintenance of electric discharge tubes, discharge lamps, or parts thereof; Recovery of material from discharge tubes or lamps
- H01J9/02—Manufacture of electrodes or electrode systems
- H01J9/04—Manufacture of electrodes or electrode systems of thermionic cathodes
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Abstract
The invention discloses a kind of surface-conduction electron emission source structure and preparation method thereof, belong to flat-panel monitor manufacturing technology field.Surface-conduction electron emission source structure includes a pair of symmetrical device electrodes being deposited on substrate, and deposition, which has, on device electrode offers a nanometer crack in electron emission film, electron emission film；8~20 μm of electrode gap is provided between symmetrical device electrode, dielectric fill layer and/or projection dielectric are provided with the electrode gap.Preparation method builds projection to be first in the middle of electrode gap, then conducting film is produced in projection again, using the characteristics of bump material poor thermal conductivity and the otherness that is covered on jut conducting film and other parts conducting film geometric position makes the conducting film for being covered in jut at " power-up is formed ", produce more Joule heats, a nanometer crack is set to be formed in protruding part, the controllable making of nanometer crack location is realized, field emission electron efficiency is improved.
Description
Technical field
The invention belongs to flat-panel monitor manufacturing technology field, it is related to a kind of surface-conduction electron emission source structure and its system
Make method, more particularly to a kind of Surface-conduction Electron for being capable of control surface conduction electron-emitter film nanometer cracking initiation position
Launch source structure and preparation method thereof.
Background technology
Surface conduction electron emission displaying part (the Surface-conduction that Japan Canon proposes
Electron-emitter Display, SED), as FED one kind, its display effect is non-in current flat-panel display device
Normal protrusion.
SED imaging principle is similar with traditional cathode-ray picture tube (Cathode Ray Tube, CRT), is different from
CRT, SED by scribble the glass plate of fluorescent material be covered with exhibiting high surface conduction electron emission source glass film plates it is parallel pendulum
Put, such structure allows SED thickness to be made relatively thin, it is easy to panelized, maximization；Meanwhile, SED energy consumption also compares
It is relatively low.When SED works, apply one more than ten volts of voltage on the device electrode of minus plate, then produced at the crack of conducting film
Raw high field is strong, and due to tunnel-effect, tunelling electrons fly to the other end from the one end in crack, so as to produce surface conduction electric current.
Apply the part bombardment light-emitting phosphor in the electronics that can attract emission of cathode after high pressure on the anode of positive plate.
The core of surface-conduction-electron emission display is surface-conduction electron emission source, prepares the skill of the emission source
Art difficult point is that unified nanoscale crack how is formed on conductive film, to realize that tunelling electrons are launched.Canon Inc. is passed through
Years of researches are developed, by carrying out " power-up is formed " technique (electro-forming process) and " activation " to film
Technique (activation process) obtains nanoscale gap.But, the general principle of " power-up is formed " technique formation is profit
The Joule heat produced with power-up is heated " blowing " to electron emission film, and its position and width have randomness, each electricity
Uniformity between sub- transmitter unit is poor, have impact on the performance of electron emission source, makes the electric current of surface-conduction electron emission source
Density and electronic transmitting efficiency are relatively low.
The content of the invention
In order to overcome the defect that above-mentioned prior art is present, it is an object of the invention to provide a kind of Surface-conduction Electron hair
Penetrate source structure and preparation method thereof；The structure can control the forming position in electron emission film nanometer crack, improve electronics hair
Penetrate the electronic transmitting efficiency in source；This method is simple to operate, low for equipment requirements, easily realizes.
The present invention is to be achieved through the following technical solutions：
A kind of surface-conduction electron emission source structure, including a pair of symmetrical device electrodes being deposited on substrate, in device
There being deposition on part electrode has nanometer crack in electron emission film, electron emission film；Set between symmetrical device electrode
There is 8~20 μm of electrode gap, dielectric fill layer and/or projection dielectric are provided with the electrode gap.
The thickness of the device electrode is 100~200nm；And device electrode is by one kind in platinum, copper, silver, nickel, chromium or several
Material is planted to be made.
The thickness of the electron emission film is 30~100nm；And electron emission film is made up of palladium oxide or zinc oxide.
The thickness of the dielectric fill layer is 50~200nm；And Filled Dielectrics layer uses silica or hafnium oxide system
Into.
The dielectric length of projection is suitable with the length of electron emission film；The dielectric width of projection is 2~5 μ
M, thickness is 20~250nm.
When being provided with dielectric fill layer and projection dielectric in electrode gap, projection dielectric is placed in dielectric fill layer
Top is coated on inside dielectric fill layer.
When projection dielectric is placed in above dielectric fill layer, the dielectric thickness of projection is 20~50nm.
A kind of preparation method of surface-conduction electron emission source structure, comprises the following steps：
1) some groups of metal electrodes are deposited on substrate using magnetron sputtering method, forms a pair of symmetrical device electrodes, it is right
The electrode gap of 8~20 μm of formation between the device electrode of title；
2) use magnetron sputtering method made between electrode gap thickness for 50~200nm dielectric fill layer and/or
The projection dielectric that thickness is 20~250nm is made between electrode gap；
3) electron emission film is made between device electrode pair using magnetron sputtering method；
4) technology is formed using power-up to electron emission film and nanoscale crack is made.
The thickness of the device electrode is 100~200nm；And device electrode is by one kind in platinum, copper, silver, nickel, chromium or several
Material is planted to be made；The thickness of the electron emission film is 30~100nm；And electron emission film is by palladium oxide or zinc oxide system
Into.
When being provided with dielectric fill layer and projection dielectric in electrode gap, projection dielectric is placed in dielectric fill layer
Top is coated on inside dielectric fill layer；
When projection dielectric is placed in above dielectric fill layer, the dielectric thickness of projection is 20~50nm.
Compared with prior art, the present invention has following beneficial technique effect：
The surface-conduction electron emission source structure of the present invention, by device electrode, the filling device electrode being produced on substrate
Dielectric fill layer, projection dielectric and the electron emission film in gap are constituted.Dielectric fill layer and/or projection dielectric are filled out
Fill in the electrode gap formed between device electrode, using projection medium heat conduction it is poor the characteristics of and be covered in jut
Conducting film makes the conducting film for being covered in jut " power-up is formed " with the otherness on other parts conducting film geometric position
When, more Joule heats are produced, nanometer crack is formed the controllable making for realizing nanometer crack location in protruding part, enters
And by the padded surface-conduction electron emission film of filling between electrode gap, shorten between electron emission position and positive plate away from
From, electron tunneling is easier to scatter after launching and is attracted by anode, effectively increase the ratio of tunelling electrons directive anode,
So as to improve field emission electron efficiency.
Present invention side makes nanometer crack using " power-up is formed " technique, and step is simple, requires low to instrument and equipment, first exists
Projection is built in the middle of electrode gap, then conducting film is produced in projection again, using the characteristics of bump material poor thermal conductivity with
And be covered in jut conducting film and the otherness on other parts conducting film geometric position and make to be covered in leading for jut
Electrolemma produces more Joule heats, a nanometer crack is formed in protruding part, realize nanometer crack at " power-up is formed "
The controllable making of position.This method stability is strong, it is easy to control, and is adapted to scale amplification production.
Brief description of the drawings
Fig. 1 is SED theory structure schematic diagrams；
Fig. 2-1 is a kind of typical structure front view of the surface-conduction electron emission source of prior art；
Fig. 2-2 is Fig. 2-1 top view；
Fig. 3-1 is a kind of preferable efficient surface conduction electron emission source structural front view disclosed by the invention；
Fig. 3-2 is Fig. 3-1 top view；
Fig. 4-1 is surface-conduction electron emission source structural front view padded in the middle of the embodiment of the present invention 1；
Fig. 4-2 is Fig. 4-1 top view；
Fig. 5-1 is the surface-conduction electron emission source structural front view of the unilateral filling of the embodiment of the present invention 2；
Fig. 5-2 is Fig. 5-1 top view；
Fig. 6-1 is that the embodiment of the present invention 3 fills middle padded surface-conduction electron emission source structural front view；
Fig. 6-2 is Fig. 6-1 top view；
Fig. 7-1 is the padded surface-conduction electron emission source structural front view in centre that the embodiment of the present invention 4 is filled；
Fig. 7-2 is Fig. 7-1 top view.
Embodiment
With reference to specific embodiment, the present invention is described in further detail, it is described be explanation of the invention and
It is not to limit.
First, SED principles are introduced, referring to Fig. 1, the structure of one pixel of SED displays, SED contains the He of infrabasal plate 100
Upper substrate 110, each pixel cell includes three sub-pixels of RGB, and electron emission source 130 is produced on lower glass substrate 100
On.Surface conduction electron emission electron source includes device electrode 150 and electron emission film 250.SED display devices also include one
Individual high voltage anode 170 and cathode device voltage 160.When applying DC voltage on device electrode 150, Surface-conduction Electron
Launch the meeting launching electronics of film 250, in the case where the voltage of high voltage anode 170 accelerates, electron bombardment fluorescent material 180 lights.
The surface-conduction electron emission source structure of the present invention, including a pair of the symmetrical devices of deposition on the substrate 100 are electric
Pole 150, deposition, which has, on device electrode 150 offers nanoscale crack 260 in electron emission film 250, electron emission film；
8~20 μm of electrode gap is provided between symmetrical device electrode, dielectric fill layer 300 is provided with the electrode gap
And/or projection dielectric 310.
The thickness of the device electrode 150 is 100~200nm；And device electrode 150 is by one in platinum, copper, silver, nickel, chromium
Plant or different materials are made.The thickness of the electron emission film 250 is 30~100nm；And electron emission film 250 is by aoxidizing
Palladium is made.
The thickness of the dielectric fill layer 300 is 50~200nm；The selection of dielectric filler layer material is to be adhered to substrate
The good insulating materials of property, such as silica, hafnium oxide.Its physical dimension, including length and width, thickness, depending on device electrode it
Between gap size and device electrode thickness.
The length of the projection dielectric 310 is suitable with the length of electron emission film 250, and width is 2~5 μm, thickness
For 20~250nm.The material selection of projection dielectric 310 is, the material of poor thermal conductivity, such as two preferable with filled media adhesiveness
Silica, alumina silicate etc..
When being provided with dielectric fill layer 300 and projection dielectric 310 in electrode gap, projection dielectric 310 is placed in electricity
The top of Filled Dielectrics layer 300 is coated on inside dielectric fill layer 300；
When projection medium 310 is placed in 300 top of dielectric fill layer, 20~50nm of thickness of projection dielectric 310.
Comparative example：
It is a kind of typical structure schematic diagram of the surface-conduction electron emission source of prior art referring to Fig. 2-1 and Fig. 2-2,
Surface conduction electron emission electron source is produced on infrabasal plate 100.Electron emission source includes two device electrodes 150 and surface is passed
Lead electron emission film 250.
Embodiment 1
Referring to Fig. 4-1 and Fig. 4-2, a kind of padded surface-conduction electron emission source structure in centre, including two device electricity
Pole 150, projection dielectric 310 and electron emission film 250 in the middle of electrode gap.
The manufacturing process of the structure is：
1) some groups of metal electrodes 150 are sputtered on the substrate 100 with methods such as magnetron sputterings, electrod-array, electrode is formed
Thickness is 100~200nm, the gap for having 8~20 μm between electrode；
2) it is 2~5 μm to sputter a slice width degree between the gap of device electrode 150 with methods such as magnetron sputterings, length and surface
The length of conduction electron-emitter film 250 is suitable, 100~150nm of thickness projection dielectric 310；
3) with methods such as magnetron sputterings in 150 sputtering surface conduction electron-emitter films 250 of device electrode, electron emission
The thickness of film 250 is 30~100nm；
4) " power-up is formed " PROCESS FOR TREATMENT is carried out to electron emission film 250, nanometer crack 260 is formed.
Embodiment 2
Referring to Fig. 5-1 and Fig. 5-2, a kind of unilateral padded surface-conduction electron emission source structure, its structure includes two
Device electrode 150, has while being connected with electrode, the dielectric fill layer 300 and electron emission for being filled with partial electrode gap are thin
Film 250.
The manufacturing process of the structure is：
1) some groups of metal electrodes 150 are sputtered on the substrate 100 with methods such as magnetron sputterings, electrod-array, electrode is formed
Thickness is 100~200nm, the gap for having 8~20 μm between electrode；
2) the thickness dielectric suitable with thickness of electrode is sputtered between the gap of device electrode 150 with methods such as magnetron sputterings to fill out
Layer 300 is filled, the width of filling dielectric packed layer 300 is 4~8 μm, and its side is connected with electrode one end, and opposite side is located between electrode
In gap.
3) with methods such as magnetron sputterings in 150 sputtering surface conduction electron-emitter films 250 of device electrode, electron emission
The thickness of film 250 is 30~100nm；
4) " power-up is formed " PROCESS FOR TREATMENT is carried out to electron emission film 250, nanometer crack 260 is formed.
Embodiment 3
Referring to Fig. 6-1 and Fig. 6-2, a kind of padded surface-conduction electron emission source structure in centre of filling, including two
Device electrode 150, dielectric fill layer 300, projection dielectric 310 and electron emission film 250.
Dielectric fill layer 300 is first made during making, then makes projection dielectric 310, specific make step is：
1) some groups of metal electrodes 150 are sputtered on the substrate 100 with methods such as magnetron sputterings, electrod-array, electrode is formed
Thickness is 100~200nm, the gap for having 8~20 μm between electrode；
2) the thickness dielectric suitable with thickness of electrode is sputtered between the gap of device electrode 150 with methods such as magnetron sputterings to fill out
Fill the filling electrode gap of layer 300；
3) it is 2~5 μm to sputter a slice width degree between the gap of device electrode 150 with methods such as magnetron sputterings, length and surface
Quite, thickness is 20~50nm projection dielectric 310 to the length of conduction electron-emitter film 250；
4) with methods such as magnetron sputterings in 150 sputtering surface conduction electron-emitter films 250 of device electrode, electron emission
The thickness of film 250 is 30~100nm.
5) " power-up is formed " PROCESS FOR TREATMENT is carried out to electron emission film 250, nanometer crack 260 is formed.
Embodiment 4
Referring to Fig. 7-1 and Fig. 7-2, a kind of padded surface-conduction electron emission source structure in centre of filling, including two
Device electrode 150, dielectric fill layer 300, projection dielectric 310 and electron emission film 250.
Manufacturing process is first making projection dielectric 310, then make dielectric fill layer 300, and specific make step is：
1) some groups of metal electrodes 150 are sputtered on the substrate 100 with methods such as magnetron sputterings, electrod-array, electrode is formed
Thickness is 100~200nm, the gap for having 8~20 μm between electrode；
2) it is 2~5 μm to sputter a slice width degree between the gap of device electrode 150 with methods such as magnetron sputterings, length and surface
The length of conduction electron-emitter film 250 is suitable, 100~150nm of thickness projection dielectric 310；
3) the thickness dielectric suitable with thickness of electrode is sputtered between the gap of device electrode 150 with methods such as magnetron sputterings to fill out
Fill the filling electrode gap of layer 300.
4) with methods such as magnetron sputterings in 150 sputtering surface conduction electron-emitter films 250 of device electrode, electron emission
The thickness of film 250 is 30~100nm.
5) " power-up is formed " PROCESS FOR TREATMENT is carried out to electron emission film 250, nanometer crack 260 is formed.
Referring to Fig. 3-1 and Fig. 3-2, a kind of padded surface-conduction electron emission source in preferable centre disclosed in this invention
Structure, its structure includes two device electrodes 150, is filled in the dielectric fill layer 300 with center protrusion of electrode gap,
And electron emission film 250.
In summary, new surface-conduction electron emission source structure of the invention includes device electrode, dielectric filler
Layer, projection dielectric and electron emission film.Making the method in nanometer crack in the prior art typically has focused ion beam method
(FIB) and hydrogen absorption technique etc., requirement of the focused ion beam method to instrument and equipment is very high, it is necessary to using expensive instrument and equipment,
The realization of hydrogen absorption technique needs complicated preparation process and method.The preparation method of the present invention is the first structure in the middle of electrode gap
Projection is built, then conducting film is produced in projection again, using the characteristics of bump material poor thermal conductivity and being covered in jut
Conducting film and the otherness on other parts conducting film geometric position is divided to make the conducting film for being covered in jut in " power-up shape
Into " when, more Joule heats are produced, a nanometer crack is formed in protruding part, the controllable of nanometer crack location is realized
Make, and then by the padded surface-conduction electron emission film of filling between electrode gap, shorten electron emission position and positive plate
Distance, improves the ratio scattered in tunelling electrons to anode, so as to improve field emission electron efficiency.
Claims (5)
1. a kind of surface-conduction electron emission source structure, it is characterised in that a pair including being deposited on substrate (100) are symmetrical
Device electrode (150), deposition has electron emission film (250) on device electrode (150), and electron emission film is provided with nanometer
Crack (260)；8~20 μm of electrode gap is provided between symmetrical device electrode, dielectric is provided with the electrode gap
Packed layer (300) and projection dielectric (310), projection dielectric (310) are placed in above dielectric fill layer (300) or are coated on
Dielectric fill layer (300) is internal；The length of projection dielectric (310) and the equal length of electron emission film (250)；Projection
The width of dielectric (310) is 2~5 μm, and thickness is 20~250nm；
The thickness of the electron emission film (250) is 30~100nm；And electron emission film (250) is by palladium oxide or oxidation
Zinc is made；
The thickness of the dielectric fill layer (300) is 50~200nm；And Filled Dielectrics layer (300) uses silica or oxygen
Change hafnium to be made.
2. a kind of surface-conduction electron emission source structure according to claim 1, it is characterised in that the device electrode
(150) thickness is 100~200nm；And device electrode (150) is by one or more of material systems in platinum, copper, silver, nickel, chromium
Into.
3. a kind of surface-conduction electron emission source structure according to claim 1, it is characterised in that when projection dielectric
(310) when being placed in above dielectric fill layer (300), the thickness of projection dielectric (310) is 20~50nm.
4. a kind of preparation method of surface-conduction electron emission source structure, it is characterised in that comprise the following steps：
1) some groups of metal electrodes are deposited on substrate (100) using magnetron sputtering method, forms a pair of symmetrical device electrodes
(150) 8~20 μm of electrode gap, is formed between symmetrical device electrode (150)；
2) magnetron sputtering method is used to make dielectric fill layer (300) and thickness of the thickness for 50~200nm between electrode gap
For 20~250nm projection dielectric (310)；The projection dielectric (310) is made up of silica or alumina silicate；
It is internal that projection dielectric (310) is placed in above dielectric fill layer (300) or be coated on dielectric fill layer (300)；
3) electron emission film (250) is made between in device electrode (150) using magnetron sputtering method；
4) technology is formed using power-up to electron emission film (250) and nanoscale crack (260) is made.
5. the preparation method of a kind of surface-conduction electron emission source structure according to claim 4, it is characterised in that described
The thickness of device electrode (150) is 100~200nm；And device electrode (150) is by the one or more in platinum, copper, silver, nickel, chromium
Material is made；The thickness of the electron emission film (250) is 30~100nm；And electron emission film (250) by palladium oxide or
Zinc oxide is made.
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| KR100752862B1 (en) * | 2001-01-03 | 2007-08-29 | 엘지전자 주식회사 | Manufacturing method for surface conduction electron emission display |
| JP2005063779A (en) * | 2003-08-11 | 2005-03-10 | Canon Inc | Process of manufacture of electron emitting element, electron source, and image forming apparatus |
| JP2005259551A (en) * | 2004-03-12 | 2005-09-22 | Canon Inc | Manufacturing method for electron emission element, electron source and image forming device |
| JP2005268167A (en) * | 2004-03-22 | 2005-09-29 | Canon Inc | Electron-emitting element, and manufacturing method of electron source and image forming device |
| JP2011018512A (en) * | 2009-07-08 | 2011-01-27 | Nec Corp | Emitter electrode, method for manufacturing the emitter electrode, and lighting system |
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| CN101814408A (en) * | 2010-04-07 | 2010-08-25 | 西安交通大学 | Manufacturing method of surface-conduction electron emission source based on nano-imprint |
| CN102262991A (en) * | 2011-07-11 | 2011-11-30 | 西安交通大学 | Preparation method of electron emission source nano seam array of surface conduction electron emitter display (SED) |
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