CN204045596U - The plastic package power diode of polyimides glue protect IC table top - Google Patents
The plastic package power diode of polyimides glue protect IC table top Download PDFInfo
- Publication number
- CN204045596U CN204045596U CN201420507500.XU CN201420507500U CN204045596U CN 204045596 U CN204045596 U CN 204045596U CN 201420507500 U CN201420507500 U CN 201420507500U CN 204045596 U CN204045596 U CN 204045596U
- Authority
- CN
- China
- Prior art keywords
- chip
- ailhead
- plastic
- table top
- polyimides glue
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Fee Related
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Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
- H01L24/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
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- Engineering & Computer Science (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Structures Or Materials For Encapsulating Or Coating Semiconductor Devices Or Solid State Devices (AREA)
Abstract
The utility model discloses a kind of plastic package power diode of polyimides glue protect IC table top, belong to technical field of semiconductor device.It comprises chip, up and down ailhead oxygen-free cupreous, weld layer and non-cavity plastic-sealed body; Primary coating electronic pure polyimides glue around described chip table, secondary applies electronic pure silicon rubber again; Described chip is between upper and lower ailhead oxygen-free cupreous, and the upper and lower ailhead of ailhead oxygen-free cupreous is connected by weld layer with chip up and down; Described upper and lower ailhead, weld layer, chip dies packaged by plastic are in plastic-sealed body.The utility model is owing to adopting above structure and technical scheme; compared with the prior art the shortcoming of glassivation and silicon rubber protect IC table top is overcome; there is glassivation and silicon rubber protect IC table top advantage; diode chip for backlight unit and polyimides glue-line have resisted impulsive force during molding; there is the high-temperature current leakage limit little; hot properties is good, the advantage that high-grade rate is high, reliability is high.
Description
Technical field
The utility model relates to technical field of semiconductor device, especially relates to a kind of plastic package power diode.
Background technology
At present, the power diode of extensive use, its outline packages main flow adopts epoxy resin plastics encapsulation.Power diode due to discharge capacity large, reverse voltage is high, mostly adopt open knot chip, PN junction silicon rubber protection or glassivation (GPP) protection that chip table is open, the method of its two kinds of protect IC table top PN junctions respectively has pluses and minuses, and the advantage of the former protect IC is that impulsive force when having elastic reactance molding after solidification is strong, is not easy defective chip, shortcoming is that the high-temperature current leakage of diode is comparatively large, and hot properties is not good; The advantage high-temperature current leakage of the latter's protect IC is little; shortcoming is that glassivation chip cost is high; glass passivation layer is crisp; impulsive force during anti-molding is poor; easy defective chip, causes the software feature of diode, and severe patient diode loses reverse performance; sometimes the profile of larger plastic-sealed body is encapsulated, because of thermal stress generation early failure.
Utility model content
The utility model object overcomes the deficiencies in the prior art, provides a kind of cost lower, and impulsive force during anti-molding is strong, and high-temperature current leakage is little, and hot properties is good, takes into account the highly reliable plastic package power diode of glassivation and silicon rubber glue protect IC table top advantage.
The plastic package power diode of the utility model polyimides glue protect IC table top, be made up of chip, up and down ailhead oxygen-free cupreous, weld layer, non-cavity plastic-sealed body, be provided with disposable coating electronic pure polyimides glue-line around described chip table, the chip secondary of described coating electronic pure polyimides glue-line is coated with electronic pure silastic-layer again; Described chip is between upper and lower ailhead oxygen-free cupreous, and the ailhead up and down of described upper and lower ailhead oxygen-free cupreous is connected by weld layer with chip; Described upper and lower ailhead, weld layer, chip dies packaged by plastic are in plastic-sealed body.
Described electronic pure polyimides bondline thickness 1-2um.Described electronic pure silastic-layer thickness is 0.5-0.7mm.
?described chip table is after clean, primary coating electronic pure polyimides glue, polyimides glue bondline thickness 1-2um after solidification, the chip secondary through primary coating electronic pure polyimides glue applies electronic pure silicon rubber again, the thickness 0.5-0.7mm after silicon rubber solidification.Polyimides glue glue-line has the effect on absorption fixed chip PN surface free charge and passivation PN junction surface; PN junction surface is made to change non-live condition into by activated state; greatly reduce the tracking current of PN junction, it is better than the effect of glassivation (GPP) protect IC in PN junction tracking current reducing.The object that secondary applies electronic pure silicon rubber is again the elasticity utilizing silicon rubber to have, when preventing molding, impulsive force is to the impact of chip and polyimides glue glue-line, prevent the change of the reverse characteristic of diode, impulsive force during the resistance to molding of diode is strong, high-temperature current leakage is little, and hot properties is good.
The utility model is owing to adopting above structure and technical scheme; compared with prior art overcome the shortcoming of glassivation and silicon rubber protect IC table top; there is glassivation and silicon rubber protect IC table top advantage; diode chip for backlight unit and polyimides glue-line have resisted impulsive force during molding; there is the high-temperature current leakage limit little; hot properties is good, the advantage that high-grade rate is high, reliability is high.
Accompanying drawing explanation
Fig. 1 is the internal structure schematic diagram of the plastic package power diode of the utility model polyimides glue protect IC table top;
The contour structures schematic diagram that Fig. 2 is plastic package power diode shown in Fig. 1.
Embodiment
Below in conjunction with accompanying drawing, the utility model is elaborated:
As shown in Figure 1 and Figure 2, in figure: 1, upper ailhead copper conductor; 2, lower ailhead copper conductor; 3, weld layer; 4 chips; 5, polyimides glue-line; 6, silastic-layer; 7, non-cavity plastic-sealed body 8, colour circle polarity mark.
It is made up of upper ailhead copper conductor, lower ailhead copper conductor, weld layer, chip, polyimides glue (layer), silicon rubber (layer), non-cavity plastic-sealed body, colour circle polarity mark.Described chip is between upper and lower ailhead copper conductor, and the ailhead up and down of ailhead copper conductor is connected by weld layer with chip up and down, primary coating electronic pure polyimides glue around the clean chip table of cleaning, and through solidification, polyimides glue bondline thickness 1-2um after solidification, chip secondary through primary coating electronic pure polyimides glue applies electronic pure silicon rubber again, and through solidification, the thickness 0.5-0.7mm after silicon rubber curable adhesive layer.Described weld layer and chip periphery are encapsulated in silastic-layer, and the ailhead up and down of upper and lower ailhead copper conductor, weld layer, chip dies packaged by plastic, in plastic-sealed body, form non-cavity plastic-sealed body profile.
Above-described embodiment, just the utility model more preferably one of embodiment, the usual change that those skilled in the art carries out within the scope of technical solutions of the utility model and replacement all should be included within protection range of the present utility model.
Claims (3)
1. the plastic package power diode of a polyimides glue protect IC table top, be made up of chip, up and down ailhead oxygen-free cupreous, weld layer, non-cavity plastic-sealed body, it is characterized in that: be provided with disposable coating electronic pure polyimides glue-line around described chip table, the chip secondary of described coating electronic pure polyimides glue-line is coated with electronic pure silastic-layer again; Described chip is between upper and lower ailhead oxygen-free cupreous, and the ailhead up and down of described upper and lower ailhead oxygen-free cupreous is connected by weld layer with chip; Described upper and lower ailhead, weld layer, chip dies packaged by plastic are in plastic-sealed body.
2. the plastic package power diode of polyimides glue protect IC table top according to claim 1, is characterized in that: described electronic pure polyimides bondline thickness 1-2um.
3. the plastic package power diode of polyimides glue protect IC table top according to claim 1 and 2, is characterized in that: described electronic pure silastic-layer thickness is 0.5-0.7mm.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201420507500.XU CN204045596U (en) | 2014-09-04 | 2014-09-04 | The plastic package power diode of polyimides glue protect IC table top |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201420507500.XU CN204045596U (en) | 2014-09-04 | 2014-09-04 | The plastic package power diode of polyimides glue protect IC table top |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN204045596U true CN204045596U (en) | 2014-12-24 |
Family
ID=52246233
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201420507500.XU Expired - Fee Related CN204045596U (en) | 2014-09-04 | 2014-09-04 | The plastic package power diode of polyimides glue protect IC table top |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN204045596U (en) |
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN105514096A (en) * | 2016-02-03 | 2016-04-20 | 泰州优宾晶圆科技有限公司 | High-voltage silicon pile |
| CN109671634A (en) * | 2018-12-21 | 2019-04-23 | 黄山市七七七电子有限公司 | A kind of high isolation mesa passivation protection technique of welded type silicon chip |
| CN110289220A (en) * | 2019-07-07 | 2019-09-27 | 陕西航空电气有限责任公司 | A kind of 250 DEG C of junction temperature of silicon carbide diode chip insulation guard method |
-
2014
- 2014-09-04 CN CN201420507500.XU patent/CN204045596U/en not_active Expired - Fee Related
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN105514096A (en) * | 2016-02-03 | 2016-04-20 | 泰州优宾晶圆科技有限公司 | High-voltage silicon pile |
| CN109671634A (en) * | 2018-12-21 | 2019-04-23 | 黄山市七七七电子有限公司 | A kind of high isolation mesa passivation protection technique of welded type silicon chip |
| CN110289220A (en) * | 2019-07-07 | 2019-09-27 | 陕西航空电气有限责任公司 | A kind of 250 DEG C of junction temperature of silicon carbide diode chip insulation guard method |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| C14 | Grant of patent or utility model | ||
| GR01 | Patent grant | ||
| CF01 | Termination of patent right due to non-payment of annual fee |
Granted publication date: 20141224 Termination date: 20160904 |
|
| CF01 | Termination of patent right due to non-payment of annual fee |