CN204039544U - The brilliant folder of a kind of improvement - Google Patents

The brilliant folder of a kind of improvement Download PDF

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Publication number
CN204039544U
CN204039544U CN201420509079.6U CN201420509079U CN204039544U CN 204039544 U CN204039544 U CN 204039544U CN 201420509079 U CN201420509079 U CN 201420509079U CN 204039544 U CN204039544 U CN 204039544U
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CN
China
Prior art keywords
folder
brilliant
crystalline substance
boss
son
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Withdrawn - After Issue
Application number
CN201420509079.6U
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Chinese (zh)
Inventor
马志明
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Suzhou Luotelan New Material Technology Co Ltd
Original Assignee
Suzhou Luotelan New Material Technology Co Ltd
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Filing date
Publication date
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Priority to CN201420509079.6U priority Critical patent/CN204039544U/en
Application granted granted Critical
Publication of CN204039544U publication Critical patent/CN204039544U/en
Withdrawn - After Issue legal-status Critical Current
Anticipated expiration legal-status Critical

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Abstract

The utility model relates to a kind of brilliant folder of improvement used on single crystal growing furnace, and the brilliant folder of this improvement comprises boss's crystalline substance folder, and the boss's crystalline substance clamped by described boss's crystalline substance folder is in carefully cylindric; With described boss's crystalline substance folder for axle center, at the brilliant folder of the ringwise secondary son of its peripheral assembling one, pair clamped by the brilliant folder of secondary son is brilliant in Ring-cylindrical; The brilliant folder of described secondary son is regulated by controller, can press from both sides coaxial rotation with boss's crystalline substance, and can move up and down relative to boss's crystalline substance folder.This son crystalline substance folder can generate silicon single crystal rod fast, lift process stabilization and the waste material produced is less, and carries out sufficient preparation for producing larger sized silicon single crystal rod.

Description

The brilliant folder of a kind of improvement
Technical field
The utility model relates to a kind of accessory of single crystal growing furnace, especially, is the son crystalline substance folder on a kind of single crystal growing furnace.
Background technology
At present, industrial multiplex crystal pulling method manufacture order crystal silicon.Utilize single crystal growing furnace to provide specific environment, be fixed on above liquid-state silicon by one piece of son crystalline substance crystalline substance folder, liquid-state silicon is brilliant in substrate crystallization on sub-crystalline substance with son, controls the speed of the brilliant lift of son, can pull out the silicon single crystal rod of fixing thickness.In actual production process, need through processes such as seeding, amplification, shouldering, turn shoulders, the son crystalline substance folder of current single crystal furnace device only has one, the brilliant folder of son is positioned at the top master site of liquid-state silicon, in the processes such as seeding, amplification, shouldering, first generates a tapered end, just can form cylindric silicon single crystal rod afterwards, more greatly and not easily processed production, therefore the single crystal growing furnace of the brilliant folder of a this son can produce more waste material to tapered end volume, affects production efficiency; In addition, the brilliant folder of single son is limited to the pulling force of silicon single crystal rod, and lift process is unstable, thus have impact on the production of the silicon single crystal rod of lift, limits the size of silicon single crystal rod simultaneously.
Utility model content
For the problems referred to above, the purpose of this utility model is to provide the brilliant folder of a kind of improvement, and this son crystalline substance folder can generate silicon single crystal rod fast, lift process stabilization and the waste material produced is less, and carries out the preparation of abundance for producing larger sized silicon single crystal rod.
For solving the problem, the technical scheme that the utility model adopts is: the brilliant folder of this improvement comprises boss's crystalline substance folder, and the boss's crystalline substance clamped by described boss's crystalline substance folder is in carefully cylindric; With described boss's crystalline substance folder for axle center, at the brilliant folder of the ringwise secondary son of its peripheral assembling one, pair clamped by the brilliant folder of secondary son is brilliant in Ring-cylindrical; The brilliant folder of described secondary son is regulated by controller, can press from both sides coaxial rotation with boss's crystalline substance, and can move up and down relative to boss's crystalline substance folder.
The beneficial effects of the utility model are: boss is brilliant and the sub-crystalline substance of pair is clamped in boss's crystalline substance folder respectively and pair crystalline substance presss from both sides; Move down boss's crystalline substance folder, make liquid-state silicon can contact the brilliant also crystallization thereon of boss; Move boss's crystalline substance folder slowly, silicon single crystal can be lifted out; When boss's crystalline substance folder beginning pulling silicon single crystal, move down the brilliant folder of secondary son, make each secondary son of liquid-state silicon contact brilliant and crystallization thereon; Move the brilliant folder of secondary son slowly, press from both sides with boss's crystalline substance and keep geo-stationary, lift out silicon single crystal; Under the common lift of boss's crystalline substance folder, the brilliant folder of secondary son, silicon single crystal rod can be made to arrive designated diameter rapidly; The son crystalline substance folder of this structure, makes silicon single crystal rod form waviness top, compared to the conical tip of list crystalline substance folder, effectively reduces the waste material on silicon single crystal top; Brilliant compared to thicker list, the brilliant raw material of the son that this structure adopts is few, and in the process of rotary pulling, the impact of liquid towards silicon is little; Compared to more tiny single sub brilliant folder, the brilliant folder of this improvement increases with the contact area on silicon single crystal rod top, effectively increases the interaction force between son crystalline substance and silicon single crystal rod, makes lift process safer stable; Meanwhile, the increase of interaction force, also for the silicon single crystal rod of lift larger diameter has carried out sufficient preparation.
As preferably, be equipped with helical type blade at the outside surface of boss's crystalline substance folder along axis, described helical type blade edge and pair crystalline substance press from both sides inwall frictionless contact; In the process rotating crystal pulling, blade produces air-flow upwards, attracts liquid-state silicon upwards, thus promotes liquid-state silicon crystallization on boss's crystalline substance fast in seeding process.
As preferably, the brilliant surface irregularity of son of each described son brilliant folder clamping, so that crystallization fast.
As preferably, press from both sides in the lift process of geo-stationary at the brilliant folder of secondary son with boss's crystalline substance, the lower surface 5-8cm lower than the lower surface of boss crystalline substance that secondary son is brilliant, with the properly distributed be convenient to silicon single crystal rod pulling force.
Accompanying drawing explanation
Fig. 1 is in the embodiment one of the brilliant folder of this improvement, only the schematic diagram of boss's crystalline substance contact liquid-state silicon.
Fig. 2 is the pair crystalline substance of embodiment one and the schematic diagram of the brilliant cooperating contact liquid-state silicon of boss.
Fig. 3 is the brilliant folder of pair of embodiment one and the schematic diagram of boss's crystalline substance folder geo-stationary crystal pulling.
Fig. 4 is the sectional view of the son crystalline substance folder of embodiment one.
The structural representation of the embodiment two of the brilliant folder of this improvement of Fig. 5.
Embodiment:
Embodiment one:
In embodiment one described in Fig. 1 to Fig. 4, the brilliant folder of this improvement comprises boss's crystalline substance folder 1; With described boss's crystalline substance folder 1 for axle center, at pair brilliant 2 of its peripheral assembling one annular, and the pair of Ring-cylindrical brilliant 21 is had to match with it; The brilliant folder 2 of described secondary son, by a controller adjusting position, makes the brilliant folder 2 of secondary son can press from both sides 1 coaxial rotation with boss's crystalline substance, and can move up and down relative to boss's crystalline substance folder 1.Boss brilliant 11 and pair brilliant 21 are clamped in respectively on boss's crystalline substance folder 1 and the brilliant folder 2 of pair; The brilliant surface irregularity of son of each described son brilliant folder clamping, can accelerate the crystallization velocity of silicon single crystal.As shown in Figure 1, move down boss's crystalline substance folder 1, make liquid-state silicon in single crystal furnace body 4 can Rapid contact boss brilliant 11 crystallization thereon; Move boss's crystalline substance folder 1 slowly, silicon single crystal 3 can be lifted out in body of heater 4; As shown in Figure 2, when boss's crystalline substance folder 1 starts pulling silicon single crystal 3, move down the brilliant folder 2 of secondary son, make liquid-state silicon Contact Pair brilliant 21 and crystallization thereon; As shown in Figure 3, move the brilliant folder 2 of secondary son slowly, press from both sides 1 with boss's crystalline substance and keep geo-stationary, lift out silicon single crystal 3; Press from both sides in the lift process of 1 geo-stationary at the brilliant folder 2 of secondary son with boss's crystalline substance, the lower surface 5-8cm lower than the lower surface of boss crystalline substance 11 of secondary son brilliant 21, with the properly distributed be convenient to silicon single crystal rod pulling force.
Under the common lift of boss's crystalline substance folder 1, the brilliant folder 2 of secondary son, silicon single crystal rod can be made to arrive designated diameter rapidly; The son crystalline substance folder of this structure, makes silicon single crystal rod form waviness top, compared to the conical tip of list crystalline substance folder, effectively reduces the waste material on silicon single crystal top; Brilliant compared to thicker list, the brilliant raw material of the son that this structure adopts is few, and in the process of rotary pulling, the impact of liquid towards silicon is little; Compared to the more tiny brilliant folder of single son, this is improved sub-crystalline substance and accompanies boss's crystalline substance folder and the common pulling single crystal silicon rod of the brilliant folder of pair, increase with the contact area on silicon single crystal rod top, effectively increase the interaction force between son crystalline substance and silicon single crystal rod, make lift process safer stable; Meanwhile, the increase of interaction force, also for the silicon single crystal rod of lift larger diameter has carried out sufficient preparation.
Embodiment two:
In the embodiment two shown in Fig. 5, with embodiment one unlike: the outside surface pressing from both sides 1 at boss's crystalline substance is equipped with helical type blade 12 along axis, described helical type blade 12 edge and pair crystalline substance press from both sides 2 inwalls minim gap, and gap length, less than 1mm, can realize helical type blade without frictional rotation; Boss's crystalline substance folder of this structure, in the process rotating crystal pulling, blade produces air-flow upwards, boss's crystalline substance folder lower end is low-pressure state, under the influence of air pressure, the liquid-state silicon near boss's crystalline substance moves upward, thus promotes liquid-state silicon crystallization on boss's crystalline substance fast in seeding process.
The foregoing is only preferred embodiment of the present utility model, not in order to limit the utility model, all within spirit of the present utility model and principle, any amendment done, equivalent replacement, improvement etc., all should be included within protection domain of the present utility model.

Claims (4)

1. the brilliant folder of improvement, the brilliant folder of this improvement comprises: boss's crystalline substance folder (1), and the boss crystalline substance (11) of described boss's crystalline substance folder clamped by (1) is in carefully cylindric; It is characterized in that: with described boss's crystalline substance folder (1) for axle center, the brilliant folder (2) of the ringwise secondary son of its peripheral assembling one, pair brilliant (21) of the brilliant folder of secondary son clamped by (2) is in Ring-cylindrical; The brilliant folder (2) of described secondary son can press from both sides (1) coaxial rotation with boss's crystalline substance, and can move up and down relative to boss's crystalline substance folder.
2. the brilliant folder of improvement according to claim 1, is characterized in that: be equipped with helical type blade (12) at the outside surface of described boss's crystalline substance folder (1) along axis; Described helical type blade (12) edge and pair crystalline substance press from both sides (2) inwall frictionless contact.
3. the brilliant folder of improvement according to claim 1, is characterized in that: the brilliant surface irregularity of son of each described son brilliant folder clamping.
4. the brilliant folder of improvement according to claim 1, it is characterized in that: press from both sides in the lift process of (1) geo-stationary the brilliant folder (2) of described secondary son with boss's crystalline substance, the lower surface 5-8cm lower than the lower surface of boss crystalline substance (11) of secondary son brilliant (21).
CN201420509079.6U 2014-09-05 2014-09-05 The brilliant folder of a kind of improvement Withdrawn - After Issue CN204039544U (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
CN201420509079.6U CN204039544U (en) 2014-09-05 2014-09-05 The brilliant folder of a kind of improvement

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
CN201420509079.6U CN204039544U (en) 2014-09-05 2014-09-05 The brilliant folder of a kind of improvement

Publications (1)

Publication Number Publication Date
CN204039544U true CN204039544U (en) 2014-12-24

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Family Applications (1)

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CN201420509079.6U Withdrawn - After Issue CN204039544U (en) 2014-09-05 2014-09-05 The brilliant folder of a kind of improvement

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CN (1) CN204039544U (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN104178805A (en) * 2014-09-05 2014-12-03 苏州洛特兰新材料科技有限公司 Improved seed crystal clamp

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN104178805A (en) * 2014-09-05 2014-12-03 苏州洛特兰新材料科技有限公司 Improved seed crystal clamp
CN104178805B (en) * 2014-09-05 2017-03-08 江苏晨日环保科技有限公司 A kind of improvement is brilliant to be pressed from both sides

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C14 Grant of patent or utility model
GR01 Patent grant
AV01 Patent right actively abandoned

Granted publication date: 20141224

Effective date of abandoning: 20171114

AV01 Patent right actively abandoned