CN210636088U - Section taking and ending structure for large-size single crystal - Google Patents
Section taking and ending structure for large-size single crystal Download PDFInfo
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- CN210636088U CN210636088U CN201921225191.6U CN201921225191U CN210636088U CN 210636088 U CN210636088 U CN 210636088U CN 201921225191 U CN201921225191 U CN 201921225191U CN 210636088 U CN210636088 U CN 210636088U
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Abstract
The utility model provides a large-size single crystal segmentation ending structure, which comprises an upper section part and a lower section part which is integrally connected with the upper section part, wherein the height of the upper section part is greater than that of the lower section part, and the maximum diameter of the upper section part is the same as the diameter of a crystal equal-diameter section; the lower section maximum diameter is greater than the upper section minimum diameter and less than the upper section maximum diameter; the maximum height in the lower section is between the minimum heights on both sides, and the variable curved surface is formed between the minimum height and the maximum height. The utility model provides a get section ending structure be a neotype ending structure, is particularly useful for jumbo size single crystal's ending, has solved among the prior art technical problem that ending control production efficiency is low, and the suitability is high and controllable.
Description
Technical Field
The utility model belongs to the technical field of the used accessory of czochralski silicon single crystal growing furnace, especially, relate to a section ending structure is got to jumbo size single crystal.
Background
Chinese patent CN106637402B discloses a method for horizontal ending of monocrystalline silicon and a preparation method thereof, wherein the method for horizontal ending comprises: closing the automatic temperature control system and stopping the crucible from rising; manually heating the temperature to 10-20 ℃, reducing the crystal pulling speed to 0.1-0.4 mm/min, keeping the crystal to continue growing for 20-30 min, and growing the end, in contact with the solid-liquid interface, of the crystal from the concave surface to a plane; closing an automatic control system of the crystal pulling speed, manually reducing the pulling speed to be less than 0.1mm/min, keeping the crystal to continue to grow for 20-30 min, and enabling one end of the crystal, which is in contact with a solid-liquid interface, to grow from a plane to a convex surface; lowering the crucible by 20-50 mm at one time to separate the crystal from the liquid level of the silicon melt in the crucible, and reducing the crystal rotating speed and the crucible rotating speed; and cooling the crystal, and continuously pulling the crystal to obtain the product. The length of the tail of the crystal obtained by the method is about 60mm, the tail material consumption is about 2kg, and the ending period is shortened to 1-3 h. The ending method is suitable for ending of small-size single crystals (the diameter is less than 240mm) and is not suitable for ending control of large-size single crystals with the diameters of 240-310 mm. Meanwhile, for large-size single crystals, the method can cause the increase of crystal dislocation, and the heat at the center of the crystal is not easy to dissipate, so that the ending method can cause stress concentration on the crystal easily, increase the ending reject ratio, cause the increase of the reverse cutting length, and have low product utilization rate.
If the conventional ending method is adopted to end the large-size single crystal, the ending time is about 3-4 hours, the effective working hour rate for crystal growth is reduced, and the production cost is higher. Therefore, how to provide a control method suitable for the segment taking and the end closing of the large-size single crystal, which does not adopt the end closing tip, can shorten the working time and does not generate dislocation is a technical problem to be solved urgently at present.
Disclosure of Invention
The to-be-solved problem of the utility model is to provide a section ending structure is got to jumbo size single crystal, be particularly useful for the ending of the single crystal that diameter size scope is 240 supplyes 310mm, can accomplish the section ending work of getting of crystal in 1-1.5h, obtain the ending shape of ending but not ending sharp formula structure, solved among the prior art technical problem that ending control production efficiency is low.
In order to solve the technical problem, the utility model discloses a technical scheme is:
a large-size single crystal segmentation ending structure comprises an upper section and a lower section integrally connected with the upper section, wherein the height of the upper section is larger than that of the lower section, the maximum diameter of the upper section is the same as that of a crystal isodiametric section, the minimum diameter of the upper section is smaller than that of the lower section, and the maximum diameter of the lower section is smaller than that of the upper section; the maximum height in the lower section is between the minimum heights on both sides, and the variable curved surface is formed between the minimum height and the maximum height.
Further, the upper section part is of a cone frustum-shaped structure; the large-diameter surface of the upper section part is an upper end surface, and the small-diameter surface is a lower end surface.
Furthermore, the upper end face of the upper section part is integrally connected with the lower end face of the equal-diameter section.
Further, the diameter is gradually reduced from the maximum diameter of the lower section.
Further, the height of the upper section part is 30-50 mm.
Further, the height of the lower section part is not more than 2 mm.
Further, the difference between the maximum diameter and the minimum diameter in the lower section is 10-30 mm.
Further, the diameter of the equal-diameter section is 240-310 mm.
Adopt the utility model discloses get section ending structure, be particularly useful for jumbo size single crystal's ending, solved among the prior art technical problem that ending control production efficiency is low, the universality is high and controllable.
Drawings
FIG. 1 is a schematic view of a large-sized single crystal end-of-run structure according to an embodiment of the present invention;
FIG. 2 is a schematic view of a concave melt at the crystal growth interface according to an embodiment of the present invention;
FIG. 3 is a schematic view of a crystal growth interface of an embodiment of the present invention as a flat solid liquid level;
fig. 4 is a schematic view of a crystal growth interface of an embodiment of the present invention as a convex toward the melt.
In the figure:
1. crystal 11, equal diameter section 12 and ending section
121. Upper section 121, lower section 2, solid-liquid interface
3. Melt 4, crucible
Detailed Description
The present invention will be described in detail below with reference to the accompanying drawings and specific embodiments.
A large-size single crystal pulling and ending structure comprises an upper section 121 and a lower section 122 integrally connected with the upper section 121, wherein the upper section 121 and the lower section 122 jointly form an ending section 12. Wherein, the upper end surface of the upper section 121 is integrally connected with the lower end surface of the equal diameter section 11 in the crystal 1. The upper section 121 is an inverted cone frustum structure, the large diameter surface of the upper section 121 is an upper end surface, and the small diameter surface is a lower end surface. The height H1 of the upper section 121 is greater than the height of the lower section H2; the maximum diameter D1 of the upper section 121 is the same as the diameter of the constant diameter section 11 of the crystal 1; the maximum diameter D3 of the lower section 122 is greater than the minimum diameter D2 of the upper section 121 and less than the maximum diameter D1 of the upper section 121. The maximum height in the lower section 122 is between the minimum heights on both sides, and a variable curved surface is formed from the minimum height to the maximum height; the diameter of the lower section 122 tapers from a maximum diameter D3. Meanwhile, the minimum diameter D2 of the upper section 121 is 10-30mm smaller than the maximum diameter D1, and the height H1 of the upper section 121 is 30-50 mm; the lower section 122 height H2 is no greater than 2 mm.
The section-taking ending structure is particularly suitable for ending of large-size single crystal crystals, solves the technical problem of low ending control production efficiency in the prior art, and is high in universality and controllable.
The utility model provides a control method for taking section and ending of large-size single crystal, which comprises the following steps:
s1: and manually clicking a start ending button, simultaneously keeping the diameter control module to continuously operate, quickly increasing the power of the main heater, manually setting an ending initial crystal pulling speed and slowly increasing, gradually reducing the diameter of the crystal 1 until ending of the upper section 121, gradually reducing the diameter of the crystal 1, and enabling the ending shape of the crystal 1 in the upper section 121 to be a cone frustum structure, as shown in fig. 1. Wherein, the ending duration of the upper segment 121 is longer than that of the lower segment 122; the initial pull rate of crystal 1 in the upper stage 121 is greater than the initial pull rate in the lower stage 122; the final height H1 of crystal 1 in upper section 121 is greater than the final height H2 in lower section 122, and the minimum diameter D2 of crystal 1 final in upper section 121 is less than the maximum diameter D3 final in lower section 122.
Specifically, the crystal growth interface is also called a solid-liquid interface, which is an interface at which silicon is converted from a liquid phase to a solid phase. The temperature difference between the temperature at the crystal growth interface and the melting point of silicon is the original power of crystal growth, the crystal growth interface is divided into three shapes, namely a straight solid-liquid interface, a concave melt and a convex melt, as shown in fig. 2-4, and the shape of the crystal growth interface is directly influenced by the heat balance at the crystal growth interface. In the growth process of the crystal equal-diameter section 11, the flatter the shape of the crystal growth interface is, the better the quality of the prepared crystal is. The actual crystal growth interface is easy to show non-stability, the crystal growth interface is not always stable and unchangeable, but changes along with the change of the crystal growth process and the growth environment, and even if a straight solid-liquid interface shape appears, the crystal growth interface is difficult to maintain for a long time in the crystal growth process. The heat entering the interface from the melt 3 and the heat entering the crystal from the growth interface directly affects the heat balance at the crystal growth interface. In the later stage of the equal-diameter section 11, along with the gradual reduction of the melt in the crucible 4 and the gradual increase of the length of the crystal 1, the melt 3 below the solid-liquid interface 2 flows upwards under the driving of the rotation of the crystal 1, the melt 3 near the lower wall of the crucible 4 is brought to the vicinity of the growth interface from bottom to top, heat enters the vicinity of the growth interface through the melt 3 in a convection mode, and the interface moves towards the crystal 1 to form a surface concave to the melt 3, namely a concave surface while the heat entering the growth interface is increased. Meanwhile, for a large-size single crystal, the rotation speed of the crystal 1 is required to be larger when the diameter is larger, the melt 3 below the solid-liquid interface 2 flows upwards along the Z-axis direction under the action of the rotation of the crystal 1, heat enters the vicinity of the growth interface through the melt 3 in a convection mode, the heat dissipation rate of the interface close to the edge of the crystal 1 is higher than that of the center, and the shape of the solid-liquid interface 2, namely the crystal growth interface, is concave to the melt and continuously moves to one side of the crystal, as shown in FIG. 2.
When ending, the ending button is manually clicked, the diameter control module is kept running continuously, the crucible 4 is stopped to ascend, and the crystal 1 grows in the ending section 11 and the equal-diameter section 12. Therefore, the power of the main heater must be rapidly increased on the basis of the temperature of the end of the constant diameter section 11, and the pull rate of the crystal 1 is reduced to achieve the termination. The rapid increase of the power of the main heater is to increase the power of the main heater by 5-15kW on the basis of the power of the main heater at the end of the equal-diameter section 11 and keep the power unchanged until the end of the ending, so that the dislocation is eliminated under the condition that the crystal 1 continues to keep growing. And simultaneously, manually setting the pulling speed of the initial crystal 1 ending in the upper section 121 and slowly raising the pulling speed, wherein the initial pulling speed is 50-65mm/hr, and the pulling speed is gradually raised on the basis of the initial pulling speed, and the raising amplitude is 1-6%. In the upper stage part 121, heat dissipation from the surface of the crystal 1 in the vicinity of the solid-liquid interface 2 starts to deteriorate as compared with the equal diameter stage 11, and accordingly, the amount of heat entering the solid from the solid-liquid interface 2 is also reduced, and heat dissipation from the solid-liquid interface 2 becomes difficult. Meanwhile, as the diameter of the crystal 1 is continuously reduced in the ending process, the area of the solid-liquid interface 2 is correspondingly reduced due to the reduction of the diameter of the crystal 1, and further the reduction of heat entering the solid-liquid interface 2 from the melt 3 in unit time is influenced, so that the axial temperature gradient and the radial temperature gradient at the solid-liquid interface 2 are reduced, and therefore, the solid-liquid interface 2, namely the crystal growth interface gradually moves to one side of the melt, and the shape of the solid-liquid interface 2 gradually becomes gentle. Meanwhile, due to the sudden drop of the pulling speed of the crystal 1 and the sudden increase of the power of the main heater, with the continuous growth of the crystal 1, although the growth of the crystal at the center of the interface is increased along with the increase of the temperature, the growth speed is slow, the crystal near the interface is increased faster relative to the center position, and the shape of the solid-liquid interface 2 gradually tends to be straight after the ending lasts for about 25-45min, as shown in fig. 3, at the moment, the ending shape of the crystal 1 is in a cone frustum structure. When the ending of the upper section 121 is finished, the ending growth diameter D2 of the crystal 1 is reduced by 10-30mm compared with the equal diameter D1, and the obtained ending height H1 is 30-50 mm.
S2: and closing the diameter control module, manually setting the initial pulling speed of the crystal 1 in the lower section part 122 and keeping the initial pulling speed unchanged until the ending of the lower section part 122 1 is finished, wherein the maximum height in the lower section part 122 is positioned between the minimum heights on the two sides, and the maximum height is a variable curved surface.
Specifically, the initial pull-in rate of crystal 1 in the lower stage part 122 is manually set to 2-8mm/hr and kept constant, while the power of the main heater in the upper stage part 121 is kept constant until the end of the pull-in, and after the pull-in duration of 10-15min, a convex surface with a thickness of not more than 2mm is obtained, as shown in fig. 1. In the lower stage part 122, the growth of the inside of the crystal 1 is still continued, and since the initial pulling rate of the crystal 1 is smaller than that in the lower stage part 122, the diameter of the crystal growth at the initial stage of the ending of the lower stage part 122 is abruptly increased based on the crystal diameter D2 at the end of the upper stage part 121, so that the maximum diameter D3 of the crystal 1 in the lower stage part 122 is larger than the minimum diameter D2 in the upper stage part 121; but because the pulling rate does not change much, the maximum diameter D3 of the crystal 1 in the lower section 122 is only slightly larger than the diameter D2 and still smaller than the maximum diameter D1 of the upper section 121, i.e., smaller than the diameter of the crystal 1. Meanwhile, as other parameters are unchanged, the diameter of the crystal growth in the lower section part 122 is still gradually reduced, and along with the gradual reduction of the diameter of the crystal 1, after the duration of 10-15min, a convex table surface is gradually formed on the surface of the crystal 1, namely the maximum height in the lower section part 122 is positioned between the minimum heights of the two sides, and a tail surface of a variable curved surface is formed between the minimum height and the maximum height, at this moment, the tail is finished, and the height of the lower section part 122 is not more than 2 mm. This is because the pulling rate parameters of the single crystals with different diameters are different at the beginning of the ingot, so that the ending curve of the lower section 122 is variable at the end, but the diameter of the lower section 122 is generally gradually reduced, namely, gradually reduced from the maximum diameter D3. In the process of the lower section 122, along with the reduction of the diameter of the crystal 1, the temperature of the melt 3 side at the solid-liquid interface 2 is gradually reduced, so that the heat quantity of the melt 3 entering the solid-liquid interface 2 is also gradually reduced, that is, the heat dissipation capacity of the crystal 1 in the solid-liquid interface 2 is greater than the heat source entering the interface from the melt 3, so that the solid-liquid interface 2, that is, the crystal growth interface, gradually moves to the melt 3 side until a surface protruding towards the melt 3 is formed, as shown in fig. 4. Meanwhile, the low pulling rate is maintained in the lower section 122 and the temperature change is slow, which is beneficial to the dislocation-free growth and termination of the single crystal.
S3: the crucible 4 moves downwards, and the crystal 1 is slowly separated from the liquid level of the molten silicon in the crucible 4; the rotation speed of the crystal 1 and the rotation speed of the crucible 4 are reduced at the same time, and the single crystal is taken out.
Specifically, the crucible 4 is moved downwards by 30-50mm, the crystal 1 is gradually separated from the liquid level of the melt 3 in the crucible 4, and simultaneously the rotating speed of the crucible 4 is reduced to 1-5r/min on the basis of the rotating speed of the crucible 4 at the end of the constant diameter growth; correspondingly, the rotating speed of the crystal 1 starts to be reduced to 2-5r/min on the basis of the rotating speed of the crystal 1 at the end of the equal-diameter growth, the rotating direction of the crucible is opposite to the rotating direction of the crystal, and then the single crystal can be taken out.
By adopting the control method of the utility model, the large-size single crystal with the diameter of 240 plus one material of 310mm can be segmented and terminated within 1-1.5h, and the terminated but non-tapered terminating structural shape can be obtained. The method can not only shorten the working time, but also not generate dislocation, not only ensures the quality of the single crystal, but also solves the technical problem of low production efficiency of ending control in the prior art, and reduces the production cost. Meanwhile, in the ending process, the shape of the crystal growth interface can be completely controlled, the shape of the crystal growth interface is changed from a concave surface to a plane and then to a convex surface in the upper section part 121, and finally the growth interface is protruded to one side of the melt in the lower section part 122, so that the possibility of dislocation at the tail part of the single crystal is eliminated to the maximum extent, the yield and the utilization rate of products are improved, and the production cost is reduced.
Example 1:
the diameter of the single crystal is 240m, and the crystal holding time of the czochralski crystal growing furnace is 105 s.
S1: when the equal-diameter section 11 is finished, the power of the main heater is 65kW, the crystal pulling speed is 97mm/hr, the rotating speed of the crystal 1 is 10r/min, and the rotating speed of the crucible 4 is 10 r/min.
And when ending, keeping crystal rotation and crucible rotation unchanged, manually clicking an ending starting button, keeping the diameter control module to continuously operate and stopping the crucible 4 from rising, and at the moment, quickly rising 5kW on the basis of 65kW of power of the main heater when the equal diameter is ended, then turning to 70kW, and keeping 70kW unchanged until ending. Meanwhile, the initial pulling speed of the crystal 1 in the upper section 121 is manually set to 60mm/hr and slowly raised, the pulling speed of the crystal 1 is raised to 61mm/hr after ending lasts for 30min, and ending of the upper section 121. At this time, the crystal 1 had a truncated cone structure as a final shape, and the diameter of the crystal 1 was reduced from 240mm of the initial constant diameter D1 to 220mm after 20mm, that is, the diameter D2 of the crystal 1 at the end of the upper stage 121 was 220mm, and the final height H1 was 30 mm. In this process, the shape of the solid-liquid interface 2 gradually becomes flat from the concave surface, as shown in FIG. 3.
S2: and closing the diameter control module, manually setting the initial ending pulling speed of the crystal 1 in the lower section part 122 to be 2mm/hr and keeping the initial ending pulling speed unchanged, keeping the power of the main heater in the upper section part 121 to be 70kW unchanged until ending, and obtaining the ending shape which is a convex plate surface structure after ending for 10min, wherein the diameter control module is shown in figure 1. The height H2 is 0.3mm and the maximum crystal diameter in the lower section 122 is 222 mm. In this stage, the shape of the solid-liquid interface 2 gradually changes from a flat surface to a convex surface, as shown in FIG. 4.
In this embodiment, the total height of the final section 12 after completion is 30.3mm, which is 40min in total.
S3: the crucible position of the crucible 4 before moving downwards is 234.9mm, and the crucible moves downwards at a position of 30mm to 204.9mm, so that the crystal 1 is gradually separated from the liquid level of the melt 3 in the crucible 4; simultaneously, the rotating speed of the crucible 4 is reduced from 10r/min to 2r/min, the rotating speed of the crystal 1 is reduced from 10r/min to 2r/min, and the rotating direction of the crucible is opposite to the rotating direction of the crystal, so that the single crystal can be taken out.
Example 2:
the diameter of the single crystal is 280m, and the crystal holding time of the crystal pulling furnace is 105 s.
S1: when the equal-diameter section 11 is finished, the power of the main heater is 63.8kW, the crystal pulling speed is 95mm/hr, the rotating speed of the crystal 1 is 10r/min, and the rotating speed of the crucible 4 is 10 r/min.
And when ending, keeping crystal rotation and crucible rotation unchanged, manually clicking an ending starting button, keeping the diameter control module to continuously operate, stopping the crucible 4 from rising, and at the moment, quickly rising 7.2kW on the basis of 63.8kW of power of the main heater at the end of equal diameter to 71kW and keeping 71kW unchanged until ending. Meanwhile, the initial pulling speed of the crystal 1 in the upper section 121 is manually set to 63mm/hr and slowly raised, the pulling speed of the crystal 1 is raised to 64mm/hr after ending lasts for 35min, and ending of the upper section 121. At this time, the crystal 1 had a truncated cone structure as a final shape, and the diameter of the crystal 1 was reduced 30mm from 280mm of the initial constant diameter D1 to 250mm, that is, the diameter D2 of the crystal 1 at the end of the upper stage 121 was 250mm, and the final height H1 was 37 mm. In this process, the shape of the solid-liquid interface 2 gradually becomes flat from the concave surface, as shown in FIG. 3.
S2: and (3) closing the diameter control module, manually setting the initial ending pulling speed of the crystal 1 in the lower section part 122 to be 2mm/hr and keeping the initial ending pulling speed unchanged, keeping the power of the main heater 71kW unchanged in the upper section part 121 until ending, and obtaining the ending shape which is a convex plate surface structure after ending for 12min, wherein the diameter control module is shown in figure 1. The height H2 is 0.4mm and the maximum crystal diameter in the lower section 122 is 253 mm. In this stage, the shape of the solid-liquid interface 2 gradually changes from a flat surface to a convex surface, as shown in FIG. 4.
In this embodiment, the total height of the final section 12 after completion is 37.4mm, and is 47min in common use.
S3: the crucible position of the crucible 4 before moving downwards is 242.1mm, and the crucible moves downwards at a position of 30mm to 212.1mm, so that the crystal 1 is gradually separated from the liquid level of the melt 3 in the crucible 4; simultaneously, the rotating speed of the crucible 4 is reduced from 10r/min to 2r/min, the rotating speed of the crystal 1 is reduced from 10r/min to 2r/min, and the rotating direction of the crucible is opposite to the rotating direction of the crystal, so that the single crystal can be taken out.
Example 3:
the diameter of the single crystal is 310m, and the crystal holding time of the czochralski crystal growing furnace is 105 s.
S1: when the equal-diameter section 11 is finished, the power of the main heater is 61kW, the crystal pulling speed is 90mm/hr, the rotating speed of the crystal 1 is 10r/min, and the rotating speed of the crucible 4 is 10 r/min.
When ending, keeping crystal rotation and crucible rotation unchanged, manually clicking an ending starting button, keeping the diameter control module to continuously operate and stopping the crucible 4 to ascend, and at the moment, quickly ascending 12kW on the basis of 61kW of power of the main heater when the equal diameter is ended, then 73kW is obtained, and keeping 73kW unchanged until ending. Meanwhile, the initial pulling speed of the crystal 1 in the upper section 121 is manually set to 65mm/hr and slowly increased, the pulling speed of the crystal 1 is increased to 69mm/hr after ending lasts for 45min, and ending of the upper section 121. At this time, the crystal 1 had a truncated cone structure as a final shape, and the diameter of the crystal 1 was reduced 30mm from 310mm of the initial constant diameter D1 to 280mm, that is, the diameter D2 of the crystal 1 at the end of the upper stage 121 was 280mm, and the final height H1 was 48 mm. In this process, the shape of the solid-liquid interface 2 gradually becomes flat from the concave surface, as shown in FIG. 3.
S2: and (3) closing the diameter control module, manually setting the initial ending pulling speed of the crystal 1 in the lower section part 122 to be 5mm/hr and keeping the initial ending pulling speed unchanged, keeping the power of the main heater 73kW unchanged in the upper section part 121 until ending, and after ending for 15min, obtaining the ending shape which is a convex plate surface structure, as shown in figure 1. The height H2 of the ending is 1.25mm and the maximum crystal diameter in the upper section 121 is 282 mm. In this stage, the shape of the solid-liquid interface 2 gradually changes from a flat surface to a convex surface, as shown in FIG. 4.
In this embodiment, the total height of the final section 12 after completion is 49.25mm, 60min in common.
S3: the crucible position of the crucible 4 before moving downwards is 252.3mm, and the crucible moves downwards from 50mm to 202.3mm, so that the crystal 1 is gradually separated from the liquid level of the melt 3 in the crucible 4; simultaneously, the rotating speed of the crucible 4 is reduced from 10r/min to 2r/min, the rotating speed of the crystal 1 is reduced from 10r/min to 2r/min, and the rotating direction of the crucible is opposite to the rotating direction of the crystal, so that the single crystal can be taken out.
The embodiments of the present invention have been described in detail, and the description is only for the preferred embodiments of the present invention, and should not be construed as limiting the scope of the present invention. All the equivalent changes and improvements made according to the application scope of the present invention should still fall within the patent coverage of the present invention.
Claims (8)
1. A large-size single crystal segment taking and ending structure is characterized by comprising an upper segment part and a lower segment part which is integrally connected with the upper segment part, wherein the height of the upper segment part is greater than that of the lower segment part, and the maximum diameter of the upper segment part is the same as that of a crystal isodiametric segment; the lower section maximum diameter is greater than the upper section minimum diameter and less than the upper section maximum diameter; the maximum height in the lower section is between the minimum heights on both sides, and the variable curved surface is formed between the minimum height and the maximum height.
2. The large-size single crystal pulling section ending structure as claimed in claim 1, wherein the upper section part is a truncated cone-shaped structure; the large-diameter surface of the upper section part is an upper end surface, and the small-diameter surface is a lower end surface.
3. A large-size single crystal pulling and tailing structure according to claim 2, wherein the upper end surface of the upper section part is integrally connected with the lower end surface of the constant diameter section.
4. A large-sized single crystal pulling and tailing structure according to claim 3, wherein the diameter of the lower section is gradually reduced from the maximum diameter thereof.
5. A large-size single crystal pulling and tailing structure according to any one of claims 1 to 4, wherein the height of the upper section is 30 to 50 mm.
6. A large-size single crystal pulling and tailing structure according to claim 5, wherein the height of the lower section is not more than 2 mm.
7. A large-sized single crystal pulling and tailing structure according to claim 6, wherein the difference between the maximum diameter and the minimum diameter in the upper section is 10-30 mm.
8. The structure as claimed in any one of claims 1-4 and 6-7, wherein the diameter of the constant diameter section is 240-310 mm.
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Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN112301415A (en) * | 2019-07-31 | 2021-02-02 | 内蒙古中环光伏材料有限公司 | Large-size single crystal segmentation ending structure and control method thereof |
| CN114059153A (en) * | 2020-07-31 | 2022-02-18 | 内蒙古中环协鑫光伏材料有限公司 | Czochralski single crystal process and single crystal |
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2019
- 2019-07-31 CN CN201921225191.6U patent/CN210636088U/en active Active
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN112301415A (en) * | 2019-07-31 | 2021-02-02 | 内蒙古中环光伏材料有限公司 | Large-size single crystal segmentation ending structure and control method thereof |
| CN112301415B (en) * | 2019-07-31 | 2023-09-08 | 内蒙古中环光伏材料有限公司 | Large-size single crystal segment taking and ending structure and control method thereof |
| CN114059153A (en) * | 2020-07-31 | 2022-02-18 | 内蒙古中环协鑫光伏材料有限公司 | Czochralski single crystal process and single crystal |
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