CN204039498U - 扩散器 - Google Patents
扩散器 Download PDFInfo
- Publication number
- CN204039498U CN204039498U CN201420458984.3U CN201420458984U CN204039498U CN 204039498 U CN204039498 U CN 204039498U CN 201420458984 U CN201420458984 U CN 201420458984U CN 204039498 U CN204039498 U CN 204039498U
- Authority
- CN
- China
- Prior art keywords
- diameter
- hole
- scatterer
- substrate
- gas
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Lifetime
Links
- 238000011144 upstream manufacturing Methods 0.000 claims description 7
- 239000000758 substrate Substances 0.000 abstract description 65
- 238000009826 distribution Methods 0.000 abstract description 27
- 230000008021 deposition Effects 0.000 abstract description 18
- 238000000151 deposition Methods 0.000 description 15
- 239000010408 film Substances 0.000 description 11
- 238000000623 plasma-assisted chemical vapour deposition Methods 0.000 description 11
- 238000010586 diagram Methods 0.000 description 7
- 238000000034 method Methods 0.000 description 7
- 239000000463 material Substances 0.000 description 5
- 238000010926 purge Methods 0.000 description 5
- 229920001621 AMOLED Polymers 0.000 description 4
- 239000008246 gaseous mixture Substances 0.000 description 4
- 230000008569 process Effects 0.000 description 4
- 239000010409 thin film Substances 0.000 description 4
- 230000008859 change Effects 0.000 description 3
- 238000001816 cooling Methods 0.000 description 3
- 238000010438 heat treatment Methods 0.000 description 3
- 239000002243 precursor Substances 0.000 description 3
- 238000004062 sedimentation Methods 0.000 description 3
- GQPLMRYTRLFLPF-UHFFFAOYSA-N Nitrous Oxide Chemical compound [O-][N+]#N GQPLMRYTRLFLPF-UHFFFAOYSA-N 0.000 description 2
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 2
- 230000015572 biosynthetic process Effects 0.000 description 2
- 238000006243 chemical reaction Methods 0.000 description 2
- 230000008878 coupling Effects 0.000 description 2
- 238000010168 coupling process Methods 0.000 description 2
- 238000005859 coupling reaction Methods 0.000 description 2
- 238000005516 engineering process Methods 0.000 description 2
- 230000007717 exclusion Effects 0.000 description 2
- 238000009434 installation Methods 0.000 description 2
- 239000004065 semiconductor Substances 0.000 description 2
- LIVNPJMFVYWSIS-UHFFFAOYSA-N silicon monoxide Chemical compound [Si-]#[O+] LIVNPJMFVYWSIS-UHFFFAOYSA-N 0.000 description 2
- 229910052814 silicon oxide Inorganic materials 0.000 description 2
- 241000894007 species Species 0.000 description 2
- KRHYYFGTRYWZRS-UHFFFAOYSA-M Fluoride anion Chemical compound [F-] KRHYYFGTRYWZRS-UHFFFAOYSA-M 0.000 description 1
- YCKRFDGAMUMZLT-UHFFFAOYSA-N Fluorine atom Chemical compound [F] YCKRFDGAMUMZLT-UHFFFAOYSA-N 0.000 description 1
- BLRPTPMANUNPDV-UHFFFAOYSA-N Silane Chemical compound [SiH4] BLRPTPMANUNPDV-UHFFFAOYSA-N 0.000 description 1
- 241001584775 Tunga penetrans Species 0.000 description 1
- 238000005452 bending Methods 0.000 description 1
- 230000005540 biological transmission Effects 0.000 description 1
- 239000006227 byproduct Substances 0.000 description 1
- 238000010494 dissociation reaction Methods 0.000 description 1
- 230000005593 dissociations Effects 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 230000005684 electric field Effects 0.000 description 1
- 230000005672 electromagnetic field Effects 0.000 description 1
- 230000003028 elevating effect Effects 0.000 description 1
- 230000005284 excitation Effects 0.000 description 1
- 239000012530 fluid Substances 0.000 description 1
- 229910052731 fluorine Inorganic materials 0.000 description 1
- 239000011737 fluorine Substances 0.000 description 1
- 230000017525 heat dissipation Effects 0.000 description 1
- 230000006872 improvement Effects 0.000 description 1
- 239000012212 insulator Substances 0.000 description 1
- 239000004973 liquid crystal related substance Substances 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 239000011159 matrix material Substances 0.000 description 1
- 239000012528 membrane Substances 0.000 description 1
- 239000000203 mixture Substances 0.000 description 1
- 239000001272 nitrous oxide Substances 0.000 description 1
- 230000002093 peripheral effect Effects 0.000 description 1
- 238000007634 remodeling Methods 0.000 description 1
- 238000007665 sagging Methods 0.000 description 1
- 229910000077 silane Inorganic materials 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
- 238000000427 thin-film deposition Methods 0.000 description 1
- 230000007306 turnover Effects 0.000 description 1
Classifications
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/50—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating using electric discharges
- C23C16/505—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating using electric discharges using radio frequency discharges
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
- C23C16/45563—Gas nozzles
- C23C16/45565—Shower nozzles
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67017—Apparatus for fluid treatment
Landscapes
- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Metallurgy (AREA)
- General Chemical & Material Sciences (AREA)
- Materials Engineering (AREA)
- Mechanical Engineering (AREA)
- Organic Chemistry (AREA)
- Physics & Mathematics (AREA)
- Plasma & Fusion (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Chemical Vapour Deposition (AREA)
- Electromagnetism (AREA)
Applications Claiming Priority (4)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US201361859727P | 2013-07-29 | 2013-07-29 | |
| US61/859,727 | 2013-07-29 | ||
| US201361866928P | 2013-08-16 | 2013-08-16 | |
| US61/866,928 | 2013-08-16 |
Related Parent Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201320789059.4U Division CN203820883U (zh) | 2013-07-29 | 2013-12-03 | 用于沉积腔室的扩散器 |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN204039498U true CN204039498U (zh) | 2014-12-24 |
Family
ID=51295419
Family Applications (3)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201420458984.3U Expired - Lifetime CN204039498U (zh) | 2013-07-29 | 2013-12-03 | 扩散器 |
| CN201320789059.4U Expired - Lifetime CN203820883U (zh) | 2013-07-29 | 2013-12-03 | 用于沉积腔室的扩散器 |
| CN201480032438.6A Active CN105308211B (zh) | 2013-07-29 | 2014-03-12 | 用于改善边缘一致性的腔室气体扩散器孔设计 |
Family Applications After (2)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201320789059.4U Expired - Lifetime CN203820883U (zh) | 2013-07-29 | 2013-12-03 | 用于沉积腔室的扩散器 |
| CN201480032438.6A Active CN105308211B (zh) | 2013-07-29 | 2014-03-12 | 用于改善边缘一致性的腔室气体扩散器孔设计 |
Country Status (5)
| Country | Link |
|---|---|
| JP (1) | JP3197101U (ko) |
| KR (2) | KR20150000597U (ko) |
| CN (3) | CN204039498U (ko) |
| TW (3) | TWM478028U (ko) |
| WO (1) | WO2015016980A1 (ko) |
Families Citing this family (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| TWI733712B (zh) * | 2015-12-18 | 2021-07-21 | 美商應用材料股份有限公司 | 用於沉積腔室的擴散器及用於沉積腔室的電極 |
| KR20200072640A (ko) * | 2018-12-12 | 2020-06-23 | 삼성디스플레이 주식회사 | 증착 장치 |
| US11286565B2 (en) * | 2018-12-13 | 2022-03-29 | Xia Tai Xin Semiconductor (Qing Dao) Ltd. | Apparatus and method for semiconductor fabrication |
| CN109817554B (zh) * | 2019-01-31 | 2020-12-25 | 武汉华星光电半导体显示技术有限公司 | 一种气体扩散器 |
| CN112071735B (zh) * | 2019-06-10 | 2023-09-29 | 中微半导体设备(上海)股份有限公司 | 气体调节装置及应用该装置的等离子体刻蚀设备 |
| US20230122134A1 (en) * | 2021-10-19 | 2023-04-20 | Applied Materials, Inc. | Deposition chamber system diffuser with increased power efficiency |
Family Cites Families (9)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5589002A (en) * | 1994-03-24 | 1996-12-31 | Applied Materials, Inc. | Gas distribution plate for semiconductor wafer processing apparatus with means for inhibiting arcing |
| US5552017A (en) * | 1995-11-27 | 1996-09-03 | Taiwan Semiconductor Manufacturing Company | Method for improving the process uniformity in a reactor by asymmetrically adjusting the reactant gas flow |
| JP2003324072A (ja) * | 2002-05-07 | 2003-11-14 | Nec Electronics Corp | 半導体製造装置 |
| WO2005059974A1 (en) * | 2003-12-15 | 2005-06-30 | Applied Materials, Inc. | Edge flow faceplate for improvement of cvd film properties |
| KR20070039931A (ko) * | 2004-07-12 | 2007-04-13 | 어플라이드 머티어리얼스, 인코포레이티드 | 가스 확산기 곡률에 의한 플라즈마 균일성 제어 |
| WO2010136082A1 (en) * | 2009-05-26 | 2010-12-02 | Imec | Method for forming an organic material layer on a substrate |
| KR101118477B1 (ko) * | 2009-11-26 | 2012-03-12 | 주식회사 테스 | 가스 분산판 및 이를 갖는 공정 챔버 |
| KR101794155B1 (ko) * | 2011-05-02 | 2017-11-07 | 주성엔지니어링(주) | 가스 분배 장치 및 이를 구비하는 기판 처리 장치 |
| KR101059078B1 (ko) * | 2011-07-05 | 2011-08-25 | 한국과학기술원 | 유체 분배 장치 및 유체 분배 방법 |
-
2013
- 2013-11-18 TW TW102221497U patent/TWM478028U/zh not_active IP Right Cessation
- 2013-12-03 CN CN201420458984.3U patent/CN204039498U/zh not_active Expired - Lifetime
- 2013-12-03 CN CN201320789059.4U patent/CN203820883U/zh not_active Expired - Lifetime
- 2013-12-13 KR KR2020130010414U patent/KR20150000597U/ko not_active IP Right Cessation
-
2014
- 2014-03-12 WO PCT/US2014/024963 patent/WO2015016980A1/en active Application Filing
- 2014-03-12 CN CN201480032438.6A patent/CN105308211B/zh active Active
- 2014-07-11 TW TW107113987A patent/TWI661083B/zh active
- 2014-07-11 TW TW103123954A patent/TWI625419B/zh active
- 2014-07-27 JP JP2014003987U patent/JP3197101U/ja active Active
-
2019
- 2019-05-31 KR KR2020190002244U patent/KR200491450Y1/ko active IP Right Grant
Also Published As
| Publication number | Publication date |
|---|---|
| TWI661083B (zh) | 2019-06-01 |
| TWI625419B (zh) | 2018-06-01 |
| KR20190001394U (ko) | 2019-06-11 |
| CN105308211B (zh) | 2018-04-24 |
| TW201516178A (zh) | 2015-05-01 |
| TW201825705A (zh) | 2018-07-16 |
| JP3197101U (ja) | 2015-04-23 |
| CN105308211A (zh) | 2016-02-03 |
| KR200491450Y1 (ko) | 2020-04-10 |
| TWM478028U (zh) | 2014-05-11 |
| KR20150000597U (ko) | 2015-02-06 |
| CN203820883U (zh) | 2014-09-10 |
| WO2015016980A1 (en) | 2015-02-05 |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| C14 | Grant of patent or utility model | ||
| GR01 | Patent grant | ||
| CX01 | Expiry of patent term |
Granted publication date: 20141224 |
|
| CX01 | Expiry of patent term |