JP3197101U - エッジ均一性を向上させるためのガスディフューザ孔の設計 - Google Patents
エッジ均一性を向上させるためのガスディフューザ孔の設計 Download PDFInfo
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- JP3197101U JP3197101U JP2014003987U JP2014003987U JP3197101U JP 3197101 U JP3197101 U JP 3197101U JP 2014003987 U JP2014003987 U JP 2014003987U JP 2014003987 U JP2014003987 U JP 2014003987U JP 3197101 U JP3197101 U JP 3197101U
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- 230000008021 deposition Effects 0.000 claims abstract description 26
- 238000011144 upstream manufacturing Methods 0.000 claims description 7
- 239000000758 substrate Substances 0.000 abstract description 65
- 239000007789 gas Substances 0.000 abstract description 64
- 239000000203 mixture Substances 0.000 abstract description 7
- 238000000151 deposition Methods 0.000 description 20
- 238000009826 distribution Methods 0.000 description 17
- 239000010408 film Substances 0.000 description 15
- 238000000623 plasma-assisted chemical vapour deposition Methods 0.000 description 13
- 238000000034 method Methods 0.000 description 9
- 238000004140 cleaning Methods 0.000 description 6
- 229920001621 AMOLED Polymers 0.000 description 5
- 238000001816 cooling Methods 0.000 description 3
- 238000010438 heat treatment Methods 0.000 description 3
- 239000002243 precursor Substances 0.000 description 3
- YCKRFDGAMUMZLT-UHFFFAOYSA-N Fluorine atom Chemical compound [F] YCKRFDGAMUMZLT-UHFFFAOYSA-N 0.000 description 2
- GQPLMRYTRLFLPF-UHFFFAOYSA-N Nitrous Oxide Chemical compound [O-][N+]#N GQPLMRYTRLFLPF-UHFFFAOYSA-N 0.000 description 2
- 238000005229 chemical vapour deposition Methods 0.000 description 2
- 238000005530 etching Methods 0.000 description 2
- 229910052731 fluorine Inorganic materials 0.000 description 2
- 239000011737 fluorine Substances 0.000 description 2
- 230000002093 peripheral effect Effects 0.000 description 2
- 239000004065 semiconductor Substances 0.000 description 2
- 239000010409 thin film Substances 0.000 description 2
- 235000012431 wafers Nutrition 0.000 description 2
- BLRPTPMANUNPDV-UHFFFAOYSA-N Silane Chemical compound [SiH4] BLRPTPMANUNPDV-UHFFFAOYSA-N 0.000 description 1
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 1
- 239000006227 byproduct Substances 0.000 description 1
- 238000011109 contamination Methods 0.000 description 1
- 230000007423 decrease Effects 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 230000005684 electric field Effects 0.000 description 1
- 230000005672 electromagnetic field Effects 0.000 description 1
- 230000007717 exclusion Effects 0.000 description 1
- 239000012530 fluid Substances 0.000 description 1
- 230000017525 heat dissipation Effects 0.000 description 1
- 239000004973 liquid crystal related substance Substances 0.000 description 1
- 239000000463 material Substances 0.000 description 1
- 239000011159 matrix material Substances 0.000 description 1
- 239000001272 nitrous oxide Substances 0.000 description 1
- 238000011165 process development Methods 0.000 description 1
- 238000005215 recombination Methods 0.000 description 1
- 230000006798 recombination Effects 0.000 description 1
- 229910000077 silane Inorganic materials 0.000 description 1
- LIVNPJMFVYWSIS-UHFFFAOYSA-N silicon monoxide Chemical compound [Si-]#[O+] LIVNPJMFVYWSIS-UHFFFAOYSA-N 0.000 description 1
- 229910052814 silicon oxide Inorganic materials 0.000 description 1
- 239000000725 suspension Substances 0.000 description 1
- 238000009827 uniform distribution Methods 0.000 description 1
Classifications
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/50—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating using electric discharges
- C23C16/505—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating using electric discharges using radio frequency discharges
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
- C23C16/45563—Gas nozzles
- C23C16/45565—Shower nozzles
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67017—Apparatus for fluid treatment
Landscapes
- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Chemical Kinetics & Catalysis (AREA)
- General Chemical & Material Sciences (AREA)
- Materials Engineering (AREA)
- Mechanical Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Physics & Mathematics (AREA)
- Plasma & Fusion (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Chemical Vapour Deposition (AREA)
- Electromagnetism (AREA)
Abstract
Description
本考案の実施形態は、概して、ガス分配プレートアセンブリ及び処理チャンバ内にガスを分配するための方法に関する。
液晶ディスプレイ又はフラットパネルは、一般に、コンピュータやテレビのモニター等のアクティブマトリックスディスプレイのために使用される。プラズマ強化化学蒸着(PECVD)は、一般に、フラットパネルディスプレイ用の透明基板や半導体ウェハ等の基板上に薄膜を堆積するために使用される。PECVDは、一般に、基板を含む真空チャンバ内に前駆体ガス又はガス混合物を導入することによって達成される。前駆体ガス又はガス混合物は、典型的には、チャンバの上部近くに位置する分配プレートを通って下方に導かれる。チャンバ内の前駆体ガス又はガス混合物は、チャンバに結合された1以上のRF電源からチャンバに高周波(RF)電力を印加することによりエネルギー化(例えば、励起)され、プラズマになる。励起されたガス又はガス混合物は、温度制御された基板支持体上に配置された基板の表面上に材料層を形成するように反応する。反応中に生成された揮発性の副生成物は、排気システムを通してチャンバからポンピング(排気)される。
Claims (16)
- エッジ領域及びコーナー領域と、プレートの上流側と下流側の間に形成された複数のガス通路を有するプレートを含み、エッジ領域とコーナー領域の一方又は両方における複数のガス流路の一部は、第1直径を有する第1オリフィス孔と、第2直径を有する第2オリフィス孔を含み、残りの複数のオリフィス孔は、第3直径を含み、第1直径は第2直径及び第3直径よりも大きい堆積チャンバ用ディフューザ。
- 第1直径は第3直径よりも約30%大きい請求項1記載のディフューザ。
- 残りの複数のオリフィス孔は、第3直径よりも小さい第4直径を含む請求項1記載のディフューザ。
- 第2直径と第3直径は、実質的に同じである請求項3記載のディフューザ。
- 第1直径は、第4直径よりも約30%大きい請求項3記載のディフューザ。
- 第2直径と第3直径は、実質的に同じである請求項5記載のディフューザ。
- 第2直径と第3直径は、第4直径よりも約20%大きい請求項6記載のディフューザ。
- 第1直径は、第4直径よりも約30%大きい請求項7記載のディフューザ。
- 第2主エッジ領域に対向する第1主エッジ領域と、
第1及び第2主エッジ領域の各々に隣接する副エッジ領域と、
主エッジ領域と副エッジ領域の交差点のコーナー領域と、
プレートの上流側と下流側の間に形成された複数のガス通路を有するプレートであって、主エッジ領域とコーナー領域の一方又は両方に形成されたガス通路は、局所的な流量勾配構造を含むプレートを含む堆積チャンバ用ディフューザ。 - 局所的な流量勾配構造は、第1直径を有する第1オリフィス孔と第2直径を有する第2オリフィス孔を含み、残りの複数のオリフィス孔は第3直径を含み、第1直径は、第2直径及び第3直径よりも大きい請求項9記載のディフューザ。
- 第1直径は、第3直径よりも約30%大きい請求項10記載のディフューザ。
- 残りの複数のオリフィス孔は、第3直径よりも小さい第4直径を含む請求項10記載のディフューザ。
- 第2直径と第3直径は、実質的に同じである請求項11記載のディフューザ。
- 第1直径は、第4直径よりも約30%大きい請求項11記載のディフューザ。
- 第2直径と第3直径は、実質的に同じである請求項14記載のディフューザ。
- 第1直径は、第4直径よりも約20%〜30%大きい請求項15記載のディフューザ。
Applications Claiming Priority (4)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US201361859727P | 2013-07-29 | 2013-07-29 | |
US61/859,727 | 2013-07-29 | ||
US201361866928P | 2013-08-16 | 2013-08-16 | |
US61/866,928 | 2013-08-16 |
Publications (1)
Publication Number | Publication Date |
---|---|
JP3197101U true JP3197101U (ja) | 2015-04-23 |
Family
ID=51295419
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2014003987U Expired - Lifetime JP3197101U (ja) | 2013-07-29 | 2014-07-27 | エッジ均一性を向上させるためのガスディフューザ孔の設計 |
Country Status (5)
Country | Link |
---|---|
JP (1) | JP3197101U (ja) |
KR (2) | KR20150000597U (ja) |
CN (3) | CN203820883U (ja) |
TW (3) | TWM478028U (ja) |
WO (1) | WO2015016980A1 (ja) |
Families Citing this family (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
TWI733712B (zh) * | 2015-12-18 | 2021-07-21 | 美商應用材料股份有限公司 | 用於沉積腔室的擴散器及用於沉積腔室的電極 |
US11078571B2 (en) * | 2018-12-12 | 2021-08-03 | Samsung Display Co., Ltd. | Deposition apparatus including a heat dissipation member |
US11572624B2 (en) * | 2018-12-13 | 2023-02-07 | Xia Tai Xin Semiconductor (Qing Dao) Ltd. | Apparatus and method for semiconductor fabrication |
CN109817554B (zh) * | 2019-01-31 | 2020-12-25 | 武汉华星光电半导体显示技术有限公司 | 一种气体扩散器 |
CN112071735B (zh) * | 2019-06-10 | 2023-09-29 | 中微半导体设备(上海)股份有限公司 | 气体调节装置及应用该装置的等离子体刻蚀设备 |
US20230122134A1 (en) * | 2021-10-19 | 2023-04-20 | Applied Materials, Inc. | Deposition chamber system diffuser with increased power efficiency |
Family Cites Families (9)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US5589002A (en) * | 1994-03-24 | 1996-12-31 | Applied Materials, Inc. | Gas distribution plate for semiconductor wafer processing apparatus with means for inhibiting arcing |
US5552017A (en) * | 1995-11-27 | 1996-09-03 | Taiwan Semiconductor Manufacturing Company | Method for improving the process uniformity in a reactor by asymmetrically adjusting the reactant gas flow |
JP2003324072A (ja) * | 2002-05-07 | 2003-11-14 | Nec Electronics Corp | 半導体製造装置 |
CN100466162C (zh) * | 2003-12-15 | 2009-03-04 | 应用材料有限公司 | 用于改进cvd膜性能的边流面板 |
EP1789605A2 (en) * | 2004-07-12 | 2007-05-30 | Applied Materials, Inc. | Plasma uniformity control by gas diffuser curvature |
EP2435598B1 (en) * | 2009-05-26 | 2017-11-29 | Imec | Method for forming an organic material layer on a substrate |
KR101118477B1 (ko) * | 2009-11-26 | 2012-03-12 | 주식회사 테스 | 가스 분산판 및 이를 갖는 공정 챔버 |
KR101794155B1 (ko) * | 2011-05-02 | 2017-11-07 | 주성엔지니어링(주) | 가스 분배 장치 및 이를 구비하는 기판 처리 장치 |
KR101059078B1 (ko) * | 2011-07-05 | 2011-08-25 | 한국과학기술원 | 유체 분배 장치 및 유체 분배 방법 |
-
2013
- 2013-11-18 TW TW102221497U patent/TWM478028U/zh not_active IP Right Cessation
- 2013-12-03 CN CN201320789059.4U patent/CN203820883U/zh not_active Expired - Lifetime
- 2013-12-03 CN CN201420458984.3U patent/CN204039498U/zh not_active Expired - Lifetime
- 2013-12-13 KR KR2020130010414U patent/KR20150000597U/ko not_active IP Right Cessation
-
2014
- 2014-03-12 WO PCT/US2014/024963 patent/WO2015016980A1/en active Application Filing
- 2014-03-12 CN CN201480032438.6A patent/CN105308211B/zh active Active
- 2014-07-11 TW TW103123954A patent/TWI625419B/zh active
- 2014-07-11 TW TW107113987A patent/TWI661083B/zh active
- 2014-07-27 JP JP2014003987U patent/JP3197101U/ja not_active Expired - Lifetime
-
2019
- 2019-05-31 KR KR2020190002244U patent/KR200491450Y1/ko active IP Right Grant
Also Published As
Publication number | Publication date |
---|---|
CN203820883U (zh) | 2014-09-10 |
WO2015016980A1 (en) | 2015-02-05 |
CN105308211A (zh) | 2016-02-03 |
CN105308211B (zh) | 2018-04-24 |
TWM478028U (zh) | 2014-05-11 |
TWI625419B (zh) | 2018-06-01 |
TW201516178A (zh) | 2015-05-01 |
TW201825705A (zh) | 2018-07-16 |
KR20150000597U (ko) | 2015-02-06 |
KR200491450Y1 (ko) | 2020-04-10 |
KR20190001394U (ko) | 2019-06-11 |
TWI661083B (zh) | 2019-06-01 |
CN204039498U (zh) | 2014-12-24 |
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