CN203871313U - Semiconductor heat radiation structure - Google Patents
Semiconductor heat radiation structure Download PDFInfo
- Publication number
- CN203871313U CN203871313U CN201320879052.1U CN201320879052U CN203871313U CN 203871313 U CN203871313 U CN 203871313U CN 201320879052 U CN201320879052 U CN 201320879052U CN 203871313 U CN203871313 U CN 203871313U
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- CN
- China
- Prior art keywords
- heat
- semiconductor
- radiation layer
- heat loss
- radiation
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Fee Related
Links
- 230000005855 radiation Effects 0.000 title claims abstract description 59
- 239000004065 semiconductor Substances 0.000 title claims abstract description 46
- 230000003647 oxidation Effects 0.000 claims description 11
- 238000007254 oxidation reaction Methods 0.000 claims description 11
- 230000008021 deposition Effects 0.000 claims description 10
- 239000000919 ceramic Substances 0.000 claims description 8
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 claims description 6
- 239000004411 aluminium Substances 0.000 claims description 6
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 claims description 6
- 229910052782 aluminium Inorganic materials 0.000 claims description 6
- 239000010949 copper Substances 0.000 claims description 6
- 229910052802 copper Inorganic materials 0.000 claims description 6
- 230000005611 electricity Effects 0.000 claims description 4
- 235000007164 Oryza sativa Nutrition 0.000 claims description 3
- 210000003850 cellular structure Anatomy 0.000 claims description 3
- 239000002131 composite material Substances 0.000 claims description 3
- 238000009792 diffusion process Methods 0.000 claims description 3
- 235000009566 rice Nutrition 0.000 claims description 3
- 240000007594 Oryza sativa Species 0.000 claims 1
- 238000005338 heat storage Methods 0.000 abstract 1
- 238000000151 deposition Methods 0.000 description 9
- 230000017525 heat dissipation Effects 0.000 description 8
- 238000007745 plasma electrolytic oxidation reaction Methods 0.000 description 8
- 241000209094 Oryza Species 0.000 description 2
- 230000001754 anti-pyretic effect Effects 0.000 description 2
- 239000002221 antipyretic Substances 0.000 description 2
- 239000000463 material Substances 0.000 description 2
- 230000000644 propagated effect Effects 0.000 description 2
- 239000002002 slurry Substances 0.000 description 2
- 230000004308 accommodation Effects 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
Abstract
The utility model relates to a semiconductor heat radiation structure. The semiconductor heat radiation structure comprises a semiconductor element and a cover body. The cover body comprises a first side, a second side and a radiation heat radiation layer. The cover body covers the outer side of the semiconductor element through the first side and is contacted with the semiconductor element. The radiation heat radiation layer is formed in the second side of the cover body. The semiconductor heat radiation structure enables the heat generated by the semiconductor element covered by the cover body to be rapidly led out, and achieves rapid heat release through the heat radiation to prevent heat storage.
Description
Technical field
The present invention relates to a kind of semiconductor heat-dissipating structure, relate in particular to a kind of semiconductor heat-dissipating structure that improves semiconductor heat-dissipating usefulness by radiation natural heat dissipation.
Background technology
Existing mobile device (as slim pen electricity, flat board, wisdom mobile phone etc.) is along with arithmetic speed is faster, the heat that its internal calculation performance element semiconductor chip produces also relatively significantly promotes, and it can prerequisite easy to carry be considered down in order to have again, and this class device is more to do more thinning, in addition described mobile device is for can prevent that foreign matter and aqueous vapor from entering inside, these mobile devices arrange hole except earpiece holes or connector, there is very less the aperture and the outside air that are open and form convection current, therefore under the innate factor because of thinning, these mobile device inside cannot be discharged to the external world fast because of the heat that calculation execution unit and battery produce, and because the inside of mobile device is confined space, be difficult to produce heat loss through convection, and then be easy to the inner facts such as accumulated heat or heat build-up that produce of mobile device, have a strong impact on the operating efficiency of mobile device or produce heat and the problem such as work as, seriously make the excessive accumulated heat of semiconductor chip and burn.
Moreover, owing to there being the problems referred to above, also have and be present in this class mobile device inside passive heat radiation element is set: such as hot plate, temperature-uniforming plate, the passive heat dissipation element such as radiator carries out antipyretic to the computing unit chip such as changing, but still because mobile device is required to design the reason of thinning, the space that causes this device inside is restricted and is narrow, therefore the heat dissipation element being arranged in this space certainly will be reduced to ultra-thin dimensional thickness, can be arranged in narrow limited inner space, but along with the hot plate of size-constrained reduction, temperature-uniforming plate, its inner capillary structure and steam channel are more because be arranged to also identical limited reduction of ultra-thin requirement, cause and make these hot plates, temperature-uniforming plate is had a greatly reduced quality in the heat conducting operating efficiency of entirety, cannot effectively reach heat radiation usefulness, therefore in the time that the internal compute unit power of mobile device is too high, existing hot plate, temperature-uniforming plate all cannot effectively carry out antipyretic or heat radiation because tackling it, therefore how to propose effectively to separate thermal means in narrow confined space, be those skilled in the art's technology of primary improvement at present.
Summary of the invention
Therefore,, for effectively addressing the above problem, main purpose of the present invention is to provide a kind of semiconductor heat-dissipating structure that promotes semiconductor element heat dissipation by radiation natural heat dissipation.
For reaching above-mentioned purpose, the invention provides a kind of semiconductor heat-dissipating structure, comprising: semiconductor element; One lid, there is one first side and one second side and a heat loss through radiation layer, be covered in aforesaid semiconductor element-external the side contacts with this semiconductor element by this first side, described heat loss through radiation layer is formed at this second side, and described heat loss through radiation layer is a kind of loose structure or how rice structure is wherein arbitrary.
Preferably, described lid is that the composite material of copper or aluminium or copper and aluminium is wherein arbitrary.
Preferably, described semiconductor element engages by gummed with this lid or engages without Medium Diffusion that wherein either type is bonded to each other.
Preferably, described heat loss through radiation layer is by differential arc oxidation (Micro Arc Oxidation, or electricity slurry electrolytic oxidation (Plasma Electrolytic Oxidation MAO), PEO), anodic spark deposition (Anodic Spark Deposition, ASD), spark deposition anodic oxidation (Anodic Oxidation by Spark Deposition, ANOF) wherein arbitrary the second side in this housing forms cellular structure.
Preferably, described heat loss through radiation layer is by hitting the concaveconvex structure being produced by pearl.
Preferably, described heat loss through radiation layer is that a porous ceramic structure or porousness graphite-structure are wherein arbitrary.
Preferably, it is wherein arbitrary that described heat loss through radiation layer is the color of black or sub-black or dark system.
Preferably, described heat loss through radiation layer is that a kind of high radiation ceramic structure or high-hardness ceramic structure are wherein arbitrary.
The present invention is mainly by the lid of be sticked in semiconductor element outside a tool high efficient heat and high efficiency heat radiation character, and the heat loss through radiation efficiency that significantly improves of heat loss through radiation layer by this lid makes semiconductor element can be formed with natural radiation heat loss through convection in airtight accommodation space, significantly increase whereby the heat dissipation of semiconductor element entirety.
Brief description of the drawings
Fig. 1 is the three-dimensional exploded view of the first embodiment of heat abstractor of the present invention;
Fig. 2 is the assembled sectional view of the first embodiment of heat abstractor of the present invention;
Fig. 3 is the assembled sectional view of the second embodiment of heat abstractor of the present invention;
Symbol description
Semiconductor heat-dissipating structure 1
Semiconductor element 11
Lid 12
The first side 121
The second side 122
Heat loss through radiation layer 123
Embodiment
Below in conjunction with the drawings and specific embodiments, the present invention is described in further detail:
Characteristic in above-mentioned purpose of the present invention and structure thereof and function, will be explained according to appended graphic preferred embodiment.
Referring to Fig. 1,2, is stereogram and the assembled sectional view of the first embodiment of semiconductor heat-dissipating structure of the present invention, and as shown in the figure, semiconductor heat-dissipating structure 1 of the present invention, comprising: semiconductor element 11, a lid 12;
Described lid 12 has one first side 121 and one second side 122 and a heat loss through radiation layer 123, the first side cover of this lid 12 is overlying on the outside of aforesaid semiconductor element 11 and is attached at a semi-conductive side surface, described heat loss through radiation layer 123 is formed at the second side 122 of this lid 12, it is wherein arbitrary that described lid 12 can be the composite of copper or aluminium or copper and aluminium, and described lid 12 is by this first side 121 and this semiconductor element 11 conduction heat that is sticked.
And the first side 121 of described lid 12 engages by gummed or engage without Medium Diffusion that wherein either type and this semiconductor element 11 are bonded to each other.
Described heat loss through radiation layer 123 be a kind of loose structure or how rice structure or porous ceramic structure or porousness graphite-structure or high radiation ceramic structure or high-hardness ceramic structure wherein arbitrary.And this cellular structure is by differential arc oxidation (Micro Arc Oxidation, or electricity slurry electrolytic oxidation (Plasma Electrolytic Oxidation MAO), PEO), anodic spark deposition (Anodic Spark Deposition, ASD), spark deposition anodic oxidation (Anodic Oxidation by Spark Deposition, ANOF) wherein arbitrary the second side in this housing forms.
Refer to Fig. 3, for the assembled sectional view of the second embodiment of semiconductor heat-dissipating structure of the present invention, as shown in the figure, the present embodiment is identical with aforementioned the first embodiment part technical characterictic, therefore will repeat no more at this, only the present embodiment is in described heat loss through radiation layer 123 for hit produced concaveconvex structure by pearl from the different of aforementioned the first embodiment.
It is wherein arbitrary that described heat loss through radiation layer 123 in described the first～bis-embodiment is the color of black or sub-black or dark system.
The present invention mainly wishes the heat dissipation of the natural radiation heat radiation that promotes semiconductor element 11, therefore,
Post and establish with these semiconductor element 11 lids by a lid 12 with heat loss through radiation layer 123 is set, the heat loss through radiation layer 123 that black is set by the second side 122 of this lid 12 increases its heat radiation contact area lifting heat-radiation heat-dissipating efficiency.
The present invention applies the application of hot thermal radiation conduction as heat radiation, and hot conduction and convection effect all must, by material as medium, could be propagated heat energy.Thermal radiation does not need medium, can directly propagate heat energy, thus in confined space, be able in the short space of only depositing, heat is passed to the housing of mobile device, then do heat exchange by housing and the external world.
Thermal radiation is exactly that material is propagated with electromagnetic form, but electromagnetic wave is with light velocity propagation, needs medium to propagate, and object can continue to produce thermal radiation, also absorbs the extraneous thermal radiation giving simultaneously.Object sends hot ability, relevant with its surface temperature, color and degree of roughness, therefore the set heat loss through radiation layer of the present invention is to utilize related application principle that the one heat loss through radiation layer that can promote the natural heat dissipation of surface radiating area and radiating efficiency is set, the caloradiance of body surface, except relevant with temperature, also the characteristic surperficial with it is relevant, the object of for example black surface easily absorbs, also easily send thermal radiation, therefore heat loss through radiation layer of the present invention is set to black or make its surface more can further promote its radiation efficiency for black.
Although the present invention discloses as above with execution mode; so it is not in order to limit the present invention, any person skilled in the art person, without departing from the spirit and scope of the present invention; when being used for a variety of modifications and variations, therefore protection scope of the present invention is worked as with standard that claims are decided to be.
Claims (8)
1. a semiconductor heat-dissipating structure, is characterized in that, comprising:
Semiconductor element;
One lid, there is one first side and one second side and a heat loss through radiation layer, be covered in aforesaid semiconductor element-external the side contacts with this semiconductor element by this first side, described heat loss through radiation layer is formed at this second side, and described heat loss through radiation layer is a kind of loose structure or how rice structure is wherein arbitrary.
2. semiconductor heat-dissipating structure as claimed in claim 1, is characterized in that, described lid is that the composite material of copper or aluminium or copper and aluminium is wherein arbitrary.
3. semiconductor heat-dissipating structure as claimed in claim 1, is characterized in that, described semiconductor element engages by gummed with this lid or engage without Medium Diffusion that wherein either type is bonded to each other.
4. semiconductor heat-dissipating structure as claimed in claim 1, is characterized in that, described heat loss through radiation layer is starched electrolytic oxidation, anodic spark deposition by differential arc oxidation or electricity, and spark deposition anodic oxidation wherein arbitrary the second side in this lid forms cellular structure.
5. radiator structure as claimed in claim 1, is characterized in that, described heat loss through radiation layer is for hitting produced concaveconvex structure by pearl.
6. semiconductor heat-dissipating structure as claimed in claim 1, is characterized in that, described heat loss through radiation layer is that a porous ceramic structure or porousness graphite-structure are wherein arbitrary.
7. as the semiconductor heat-dissipating structure of claim 1 or 6, it is characterized in that, it is wherein arbitrary that described heat loss through radiation layer is the color of black or sub-black.
8. semiconductor heat-dissipating structure as claimed in claim 1, is characterized in that, described heat loss through radiation layer is a kind of high radiation ceramic structure.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201320879052.1U CN203871313U (en) | 2013-12-27 | 2013-12-27 | Semiconductor heat radiation structure |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201320879052.1U CN203871313U (en) | 2013-12-27 | 2013-12-27 | Semiconductor heat radiation structure |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN203871313U true CN203871313U (en) | 2014-10-08 |
Family
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Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201320879052.1U Expired - Fee Related CN203871313U (en) | 2013-12-27 | 2013-12-27 | Semiconductor heat radiation structure |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN203871313U (en) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN104752375A (en) * | 2013-12-27 | 2015-07-01 | 奇鋐科技股份有限公司 | Semiconductor heat dissipation structure |
-
2013
- 2013-12-27 CN CN201320879052.1U patent/CN203871313U/en not_active Expired - Fee Related
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN104752375A (en) * | 2013-12-27 | 2015-07-01 | 奇鋐科技股份有限公司 | Semiconductor heat dissipation structure |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| C14 | Grant of patent or utility model | ||
| GR01 | Patent grant | ||
| CF01 | Termination of patent right due to non-payment of annual fee | ||
| CF01 | Termination of patent right due to non-payment of annual fee |
Granted publication date: 20141008 |