CN203850296U - 一种mcpcb基板led集成光源 - Google Patents

一种mcpcb基板led集成光源 Download PDF

Info

Publication number
CN203850296U
CN203850296U CN201420008041.0U CN201420008041U CN203850296U CN 203850296 U CN203850296 U CN 203850296U CN 201420008041 U CN201420008041 U CN 201420008041U CN 203850296 U CN203850296 U CN 203850296U
Authority
CN
China
Prior art keywords
layer
mcpcb substrate
mcpcb
led integrated
light source
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
CN201420008041.0U
Other languages
English (en)
Inventor
杨人毅
石建青
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Shineon Beijing Technology Co Ltd
Original Assignee
Shineon Beijing Technology Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Shineon Beijing Technology Co Ltd filed Critical Shineon Beijing Technology Co Ltd
Priority to CN201420008041.0U priority Critical patent/CN203850296U/zh
Application granted granted Critical
Publication of CN203850296U publication Critical patent/CN203850296U/zh
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

Links

Classifications

    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/10Bump connectors; Manufacturing methods related thereto
    • H01L2224/15Structure, shape, material or disposition of the bump connectors after the connecting process
    • H01L2224/16Structure, shape, material or disposition of the bump connectors after the connecting process of an individual bump connector
    • H01L2224/161Disposition
    • H01L2224/16151Disposition the bump connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
    • H01L2224/16221Disposition the bump connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
    • H01L2224/16225Disposition the bump connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42Wire connectors; Manufacturing methods related thereto
    • H01L2224/47Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/4805Shape
    • H01L2224/4809Loop shape
    • H01L2224/48091Arched
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42Wire connectors; Manufacturing methods related thereto
    • H01L2224/47Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/481Disposition
    • H01L2224/48135Connecting between different semiconductor or solid-state bodies, i.e. chip-to-chip
    • H01L2224/48137Connecting between different semiconductor or solid-state bodies, i.e. chip-to-chip the bodies being arranged next to each other, e.g. on a common substrate

Landscapes

  • Led Device Packages (AREA)

Abstract

本实用新型提供了一种MCPCB基板LED集成光源,所述MCPCB基板与所述荧光粉硅胶层之间设有高反射涂层;所述MCPCB基板由下向上依次包括金属基层、导热绝缘层、电路层、阻焊层;所述LED芯片阵列焊接在电路层上。本实用新型的优点是:既能提高光源光效,也能延长光源寿命。 

Description

一种MCPCB基板LED集成光源
技术领域 
本实用新型涉及一种LED集成光源技术,尤其涉及一种MCPCB基板LED集成光源。  
背景技术 
如图1所示,MCPCB基板结构由阻焊层1(白油层)、电路层2(铜箔层)、导热绝缘层3和金属基层4(铝基板)组成。电路层2要求具有很大的载流能力,从而应使用较厚的铜箔,厚度一般35μm~280μm;导热绝缘层3是PCB铝基板核心技术之所在,它一般是由特种材料构成,热阻小(导热系数从1w/mK到280w/mk),粘弹性能优良,具有抗热老化的能力,能够承受机械及热应力。金属基层4是铝基板的支撑构件,要求具有高导热性,一般是铝板,也可使用铜板(其中铜板能够提供更好的导热性),适合于钻孔、冲剪及切割等常规机械加工。 
采用MCPCB基板的LED集成光源,目前一般分为阻焊层作为反射层或镀银作为反射层两种方式。 
如图2所示,阻焊层作为反射层的MCPCB基板LED集成光源,由荧光粉硅胶层5、阻焊层1(白油层)、电路层2(铜箔层)、导热绝缘层3和金属基层4(铝基板)、LED芯片阵列6组成。阻焊层1一般为白色油墨,主要功能是保护电路层不暴露在空气中,防止电路层的线路之间的爬电,短路;同时,在半导体元器件(电阻,电容,集成芯片等)回流焊贴片过程中,用于限制当焊锡27熔化呈液态状时的流动范围,使之局限在MCPCB基板10设定的连接半导体器件的管脚焊盘上。但是,阻焊白油的反射率很低,一般的 对应于450nm到700nm波长之间反射率在83%~90%。所以,用阻焊层1作为反射层的LED集成光源的光效低,光效在85流明/瓦(3000K,RA80)左右。 
如图3所示,镀银作为反射层的MCPCB基板LED集成光源,由荧光粉硅胶层5、镀银反射层7、阻焊层1(白油层)、电路层2(铜箔层)、导热绝缘层3和金属基层4(铝基板)、LED芯片阵列6组成。银的反射率很高,对应于450nm到700nm波长之间反射率达到大于95%。但是,银在空气中是非常不稳定的化学元素,很容易被氧化和硫化,产生黑色的氧化银和硫化银。用银作为反射层的LED集成光源起始光效很高,可以达到100流明/瓦(3000K,RA80)。但是,在长时间(几个星期到几个月)的应用点亮中,空气会渗透穿过覆盖在银层表面的荧光粉硅胶层,和银产生硫化和氧化的化学反应,导致银层表面发黑,从而导致银层的对可见光的反射率降低,造成LED集成光源的光通量衰减。使得LED集成光源在长时间点亮后的光效,降低至起始光效的70%甚至50%。 
实用新型内容 
本实用新型解决的技术问题是,提供一种既能提高光源光效,也能延长光源寿命的MCPCB基板LED集成光源。  
为了解决上述问题,本实用新型提供一种MCPCB基板LED集成光源,包括MCPCB基板、LED芯片阵列和荧光粉硅胶层,所述MCPCB基板与所述荧光粉硅胶层之间设有高反射涂层;  
;所述MCPCB基板由下向上依次包括金属基层、导热绝缘层、电路层、阻焊层;所述LED芯片阵列焊接在电路层上。  
进一步,所述高反射涂层的材料为对450nm到700nm光波长反射率达95%以上的材料。  
进一步,所述高反射涂层材质是硅胶类或环氧树脂类。  
进一步,所述涂层厚度从1微米到500微米。  
进一步,所述高反射涂层通过用印刷的方式,如喷涂印刷,针筒点胶法,钢网印刷,丝网印刷等方法制备。  
进一步,所述金属基层为铝板或铜板;所述导热绝缘层为热阻小、粘弹性能优良、具有抗热老化的能力特种材料;所述电路层为铜箔;所述阻焊层为白色油墨;所述LED芯片阵列为GaN芯片阵列。  
本实用新型的优点是:  
既能提高光源光效,也能延长光源寿命。  
附图说明 
图1为MCPCB基板结构示意图LED封装。  
图2为阻焊层作为反射层的MCPCB基板LED集成光源结构示意图。  
图3为镀银作为反射层的MCPCB基板LED集成光源结构示意图。  
图4为本实用新型实施例的MCPCB基板LED集成光源结构示意图。  
图5为本实用新型实施例的MCPCB基板LED集成光源顶视图。  
具体实施方式 
下文中将结合附图对本实用新型的实施例进行详细说明。需要说明的是,在不冲突的情况下,本申请中的实施例及实施例中的特征可以相互任意组合。  
实施例一:  
本实用新型提供了如附图4所示的一种MCPCB基板LED集成光源,包括MCPCB基板、LED芯片阵列6和荧光粉硅胶层5,MCPCB基板与荧光粉硅胶层5之间设有高反射涂层8。  
MCPCB基板10由下向上依次包括金属基层4、导热绝缘层3、电路层2、阻焊层1。  
高反射涂层8的材料为对450nm到700nm光波长反射率达95%以上的材 料。高反射涂层8材质是硅胶类或环氧树脂类。高反射涂层8厚度从1微米到500微米。高反射涂层8通过用印刷的方式,如喷涂印刷,针筒点胶法,钢网印刷,丝网印刷等方法制备。  
金属基层4为铝板或铜板;导热绝缘层3为热阻小、粘弹性能优良、具有抗热老化的能力特种材料;电路层2为铜箔;阻焊层1为白色油墨;LED芯片阵列6为GaN芯片阵列。正、负极通过焊锡27焊接在电路层2上。  
如附图5所示,LED芯片阵列由多颗芯片6串联、并联组成;芯片6串并线路连接通过MCPCB线路层。荧光粉硅胶层5设置在围坝胶30圈定的范围内。  
芯片固晶通过焊锡来完成; 焊锡固晶的实现,是通过针筒点胶法,或沾胶法,或钢网印刷法把锡膏印到MCPCB的焊脚上,通过高温回流焊方式完成固晶。  
生产本实用新型LED光源的方法,包括如下步骤: 
(a)在LED芯片阵列6周边涂覆上高反射涂层8,烘烤成型;  
(b)在MCPCB基板上焊接LED芯片阵列6;   
(c)用荧光粉硅胶对LED芯片阵列6及高反射涂层8进行覆盖。  
步骤(b)中的高反射涂层8为对450nm到700nm光波长反射率达95%以上的材料;高反射涂层8材质是硅胶类或环氧树脂类;高反射涂层8通过用印刷的方式,如喷涂印刷,针筒点胶法,钢网印刷,丝网印刷等方法制备。  
所述步骤(b)中的LED芯片阵列为GaN芯片阵列; 
所述步骤(b)中的焊接方式,是通过针筒点胶法,或沾胶法,或钢网印刷法把锡膏印到MCPCB的焊脚上,通过高温回流焊方式完成GaN芯片阵列和MCPCB的焊接。  
以上所述仅为本实用新型的优选实施例而已,并不用于限制本实用新型,对于本领域的技术人员来说,本实用新型可以有各种更改和变化。凡在本实用新型的精神和原则之内,所作的任何修改、等同替换、改进等,均应包含在本实用新型的保护范围之内。  

Claims (5)

1.一种MCPCB基板LED集成光源,包括MCPCB基板、LED芯片阵列和荧光粉硅胶层,其特征在于: 
所述MCPCB基板与所述荧光粉硅胶层之间设有高反射涂层; 
所述MCPCB基板由下向上依次包括金属基层、导热绝缘层、电路层、阻焊层;所述LED芯片阵列焊接在电路层上。 
2.如权利要求1所述的一种MCPCB基板LED集成光源,其特征在于: 
所述高反射涂层的材料为对450nm到700nm光波长反射率达95%以上的材料。 
3.如权利要求2所述的一种MCPCB基板LED集成光源,其特征在于: 
所述高反射涂层材质是硅胶类或环氧树脂类。 
4.如权利要求3所述的一种MCPCB基板LED集成光源,其特征在于: 
所述涂层厚度从1微米到500微米。 
5.如权利要求4所述的一种MCPCB基板LED集成光源,其特征在于: 
所述金属基层为铝板或铜板;所述电路层为铜箔;所述阻焊层为白色油墨;所述LED芯片阵列为GaN芯片阵列。 
CN201420008041.0U 2014-01-07 2014-01-07 一种mcpcb基板led集成光源 Expired - Lifetime CN203850296U (zh)

Priority Applications (1)

Application Number Priority Date Filing Date Title
CN201420008041.0U CN203850296U (zh) 2014-01-07 2014-01-07 一种mcpcb基板led集成光源

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
CN201420008041.0U CN203850296U (zh) 2014-01-07 2014-01-07 一种mcpcb基板led集成光源

Publications (1)

Publication Number Publication Date
CN203850296U true CN203850296U (zh) 2014-09-24

Family

ID=51563276

Family Applications (1)

Application Number Title Priority Date Filing Date
CN201420008041.0U Expired - Lifetime CN203850296U (zh) 2014-01-07 2014-01-07 一种mcpcb基板led集成光源

Country Status (1)

Country Link
CN (1) CN203850296U (zh)

Cited By (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN104329605A (zh) * 2014-10-28 2015-02-04 浙江大学 梳齿状散热的led灯
CN104409616A (zh) * 2014-11-14 2015-03-11 易美芯光(北京)科技有限公司 一种覆晶led集成光源结构及其制备方法
CN106887497A (zh) * 2015-12-15 2017-06-23 易美芯光(北京)科技有限公司 一种低热阻led光源
CN109155348A (zh) * 2016-05-20 2019-01-04 奥斯兰姆奥普托半导体有限责任公司 辐射发射组件
CN110225651A (zh) * 2019-06-19 2019-09-10 深圳市洲明科技股份有限公司 线路板及显示屏
CN112582524A (zh) * 2019-09-12 2021-03-30 群创光电股份有限公司 发光装置及其制造方法

Cited By (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN104329605A (zh) * 2014-10-28 2015-02-04 浙江大学 梳齿状散热的led灯
CN104409616A (zh) * 2014-11-14 2015-03-11 易美芯光(北京)科技有限公司 一种覆晶led集成光源结构及其制备方法
CN106887497A (zh) * 2015-12-15 2017-06-23 易美芯光(北京)科技有限公司 一种低热阻led光源
CN109155348A (zh) * 2016-05-20 2019-01-04 奥斯兰姆奥普托半导体有限责任公司 辐射发射组件
CN109155348B (zh) * 2016-05-20 2021-10-15 奥斯兰姆奥普托半导体有限责任公司 辐射发射组件
CN110225651A (zh) * 2019-06-19 2019-09-10 深圳市洲明科技股份有限公司 线路板及显示屏
CN112582524A (zh) * 2019-09-12 2021-03-30 群创光电股份有限公司 发光装置及其制造方法

Similar Documents

Publication Publication Date Title
CN203850296U (zh) 一种mcpcb基板led集成光源
CN203983324U (zh) 一种采用倒装蓝光芯片封装的led集成光源
CN104766916A (zh) 一种采用倒装蓝光芯片封装的led集成光源
CN105226167A (zh) 一种全角度发光的柔性led灯丝及其制造方法
CN102032483B (zh) Led面光源
KR101136054B1 (ko) 방열 효과를 높이고, 발광 효율을 향상시킬 수 있는 발광 다이오드의 패키지 구조와 그 제조 방법
TWI648869B (zh) 發光裝置
JP2011018871A (ja) 熱伝導接着剤を位置決めするための窪み領域を有するledの実装構造とその製造方法
CN102709278A (zh) 荧光薄膜平面薄片式led阵列光源
JP2007266358A (ja) 発光装置および照明装置
CN104681691A (zh) 一种低光衰的覆晶封装的led集成光源结构及其制备方法
CN104766856A (zh) 一种mcpcb基板led集成光源及其生产方法
CN107305922B (zh) 一种带电源一体化360度立体发光光源的制备方法
CN102723324A (zh) 一种双面出光平面薄片式led封装结构
CN202712175U (zh) 荧光薄膜平面薄片式led阵列光源
CN105575957B (zh) 一种白光led的cob光源
CN204407356U (zh) 一种低光衰的覆晶封装的led集成光源结构
CN202796951U (zh) 一种双荧光薄膜双面出光平面薄片式led阵列光源
US20140197434A1 (en) Light emitting diode device and method for manufacturing heat dissipation substrate
CN202712177U (zh) 一种双面出光平面薄片式led封装结构
CN203351666U (zh) Led模组
CN209912892U (zh) 一种cob光源
TW201403870A (zh) 發光二極體元件及其封裝方法
CN206163520U (zh) 一种led封装支架及led发光体
CN202268386U (zh) 一种led封装结构

Legal Events

Date Code Title Description
C14 Grant of patent or utility model
GR01 Patent grant
EE01 Entry into force of recordation of patent licensing contract

Assignee: SHENZHEN BETOP ELECTRONICS Co.,Ltd.

Assignor: SHINEON (BEIJING) TECHNOLOGY Co.,Ltd.

Contract record no.: 2014440000470

Denomination of utility model: LED integrated light source adopting MCPCB substrate and production method thereof

Granted publication date: 20140924

License type: Exclusive License

Record date: 20141201

LICC Enforcement, change and cancellation of record of contracts on the licence for exploitation of a patent or utility model
EC01 Cancellation of recordation of patent licensing contract

Assignee: SHENZHEN BETOP ELECTRONICS Co.,Ltd.

Assignor: SHINEON (BEIJING) TECHNOLOGY Co.,Ltd.

Contract record no.: 2014440000470

Date of cancellation: 20170925

EC01 Cancellation of recordation of patent licensing contract
CX01 Expiry of patent term

Granted publication date: 20140924

CX01 Expiry of patent term