CN203850296U - 一种mcpcb基板led集成光源 - Google Patents
一种mcpcb基板led集成光源 Download PDFInfo
- Publication number
- CN203850296U CN203850296U CN201420008041.0U CN201420008041U CN203850296U CN 203850296 U CN203850296 U CN 203850296U CN 201420008041 U CN201420008041 U CN 201420008041U CN 203850296 U CN203850296 U CN 203850296U
- Authority
- CN
- China
- Prior art keywords
- layer
- mcpcb substrate
- mcpcb
- led integrated
- light source
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Lifetime
Links
- 239000000758 substrate Substances 0.000 title claims abstract description 32
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims abstract description 20
- 239000011248 coating agent Substances 0.000 claims abstract description 18
- 238000000576 coating method Methods 0.000 claims abstract description 18
- 229910000679 solder Inorganic materials 0.000 claims abstract description 15
- 239000000843 powder Substances 0.000 claims abstract description 12
- 239000000741 silica gel Substances 0.000 claims abstract description 12
- 229910002027 silica gel Inorganic materials 0.000 claims abstract description 12
- 229910052751 metal Inorganic materials 0.000 claims abstract description 11
- 239000002184 metal Substances 0.000 claims abstract description 11
- 239000010410 layer Substances 0.000 claims description 54
- 230000003287 optical effect Effects 0.000 claims description 23
- 239000000463 material Substances 0.000 claims description 14
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 claims description 12
- 239000004411 aluminium Substances 0.000 claims description 9
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical group [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 claims description 9
- 229910052782 aluminium Inorganic materials 0.000 claims description 9
- 238000002310 reflectometry Methods 0.000 claims description 9
- 239000011889 copper foil Substances 0.000 claims description 7
- 229910052802 copper Inorganic materials 0.000 claims description 5
- 239000010949 copper Substances 0.000 claims description 5
- 239000003822 epoxy resin Substances 0.000 claims description 4
- 229920000647 polyepoxide Polymers 0.000 claims description 4
- 239000000377 silicon dioxide Substances 0.000 claims description 4
- 239000011247 coating layer Substances 0.000 claims description 2
- 230000000694 effects Effects 0.000 abstract 1
- 238000009413 insulation Methods 0.000 abstract 1
- 230000002035 prolonged effect Effects 0.000 abstract 1
- 238000000034 method Methods 0.000 description 14
- 239000003292 glue Substances 0.000 description 8
- 101100269850 Caenorhabditis elegans mask-1 gene Proteins 0.000 description 7
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 description 7
- 229910052709 silver Inorganic materials 0.000 description 7
- 239000004332 silver Substances 0.000 description 7
- ATJFFYVFTNAWJD-UHFFFAOYSA-N Tin Chemical compound [Sn] ATJFFYVFTNAWJD-UHFFFAOYSA-N 0.000 description 6
- 238000007639 printing Methods 0.000 description 6
- 229910000831 Steel Inorganic materials 0.000 description 5
- 239000010959 steel Substances 0.000 description 5
- 238000010586 diagram Methods 0.000 description 4
- 238000005516 engineering process Methods 0.000 description 3
- 238000002360 preparation method Methods 0.000 description 3
- 230000008569 process Effects 0.000 description 3
- 238000007650 screen-printing Methods 0.000 description 3
- 238000005507 spraying Methods 0.000 description 3
- 238000003878 thermal aging Methods 0.000 description 3
- 238000003466 welding Methods 0.000 description 3
- 239000006071 cream Substances 0.000 description 2
- 238000010992 reflux Methods 0.000 description 2
- 239000004065 semiconductor Substances 0.000 description 2
- NDVLTYZPCACLMA-UHFFFAOYSA-N silver oxide Chemical compound [O-2].[Ag+].[Ag+] NDVLTYZPCACLMA-UHFFFAOYSA-N 0.000 description 2
- 238000005987 sulfurization reaction Methods 0.000 description 2
- 229910052946 acanthite Inorganic materials 0.000 description 1
- 229910052729 chemical element Inorganic materials 0.000 description 1
- 238000006243 chemical reaction Methods 0.000 description 1
- 238000005520 cutting process Methods 0.000 description 1
- 238000005538 encapsulation Methods 0.000 description 1
- 230000004907 flux Effects 0.000 description 1
- 230000006872 improvement Effects 0.000 description 1
- 239000007788 liquid Substances 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 238000000465 moulding Methods 0.000 description 1
- 230000003647 oxidation Effects 0.000 description 1
- 238000007254 oxidation reaction Methods 0.000 description 1
- 239000012466 permeate Substances 0.000 description 1
- 230000001681 protective effect Effects 0.000 description 1
- 238000004080 punching Methods 0.000 description 1
- 229910001923 silver oxide Inorganic materials 0.000 description 1
- XUARKZBEFFVFRG-UHFFFAOYSA-N silver sulfide Chemical compound [S-2].[Ag+].[Ag+] XUARKZBEFFVFRG-UHFFFAOYSA-N 0.000 description 1
- 229940056910 silver sulfide Drugs 0.000 description 1
- 238000005476 soldering Methods 0.000 description 1
- 230000008646 thermal stress Effects 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/10—Bump connectors; Manufacturing methods related thereto
- H01L2224/15—Structure, shape, material or disposition of the bump connectors after the connecting process
- H01L2224/16—Structure, shape, material or disposition of the bump connectors after the connecting process of an individual bump connector
- H01L2224/161—Disposition
- H01L2224/16151—Disposition the bump connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
- H01L2224/16221—Disposition the bump connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
- H01L2224/16225—Disposition the bump connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/4805—Shape
- H01L2224/4809—Loop shape
- H01L2224/48091—Arched
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/481—Disposition
- H01L2224/48135—Connecting between different semiconductor or solid-state bodies, i.e. chip-to-chip
- H01L2224/48137—Connecting between different semiconductor or solid-state bodies, i.e. chip-to-chip the bodies being arranged next to each other, e.g. on a common substrate
Landscapes
- Led Device Packages (AREA)
Abstract
本实用新型提供了一种MCPCB基板LED集成光源，所述MCPCB基板与所述荧光粉硅胶层之间设有高反射涂层；所述MCPCB基板由下向上依次包括金属基层、导热绝缘层、电路层、阻焊层；所述LED芯片阵列焊接在电路层上。本实用新型的优点是：既能提高光源光效，也能延长光源寿命。
Description
技术领域
本实用新型涉及一种LED集成光源技术，尤其涉及一种MCPCB基板LED集成光源。
背景技术
如图1所示，MCPCB基板结构由阻焊层1(白油层)、电路层2(铜箔层)、导热绝缘层3和金属基层4(铝基板)组成。电路层2要求具有很大的载流能力，从而应使用较厚的铜箔，厚度一般35μm～280μm；导热绝缘层3是PCB铝基板核心技术之所在，它一般是由特种材料构成，热阻小(导热系数从1w/mK到280w/mk)，粘弹性能优良，具有抗热老化的能力，能够承受机械及热应力。金属基层4是铝基板的支撑构件，要求具有高导热性，一般是铝板，也可使用铜板(其中铜板能够提供更好的导热性)，适合于钻孔、冲剪及切割等常规机械加工。
采用MCPCB基板的LED集成光源，目前一般分为阻焊层作为反射层或镀银作为反射层两种方式。
如图2所示，阻焊层作为反射层的MCPCB基板LED集成光源，由荧光粉硅胶层5、阻焊层1(白油层)、电路层2(铜箔层)、导热绝缘层3和金属基层4(铝基板)、LED芯片阵列6组成。阻焊层1一般为白色油墨，主要功能是保护电路层不暴露在空气中，防止电路层的线路之间的爬电，短路；同时，在半导体元器件(电阻，电容，集成芯片等)回流焊贴片过程中，用于限制当焊锡27熔化呈液态状时的流动范围，使之局限在MCPCB基板10设定的连接半导体器件的管脚焊盘上。但是，阻焊白油的反射率很低，一般的 对应于450nm到700nm波长之间反射率在83％～90％。所以，用阻焊层1作为反射层的LED集成光源的光效低，光效在85流明/瓦(3000K,RA80)左右。
如图3所示，镀银作为反射层的MCPCB基板LED集成光源，由荧光粉硅胶层5、镀银反射层7、阻焊层1(白油层)、电路层2(铜箔层)、导热绝缘层3和金属基层4(铝基板)、LED芯片阵列6组成。银的反射率很高，对应于450nm到700nm波长之间反射率达到大于95％。但是，银在空气中是非常不稳定的化学元素，很容易被氧化和硫化，产生黑色的氧化银和硫化银。用银作为反射层的LED集成光源起始光效很高，可以达到100流明/瓦(3000K,RA80)。但是，在长时间(几个星期到几个月)的应用点亮中，空气会渗透穿过覆盖在银层表面的荧光粉硅胶层，和银产生硫化和氧化的化学反应，导致银层表面发黑，从而导致银层的对可见光的反射率降低，造成LED集成光源的光通量衰减。使得LED集成光源在长时间点亮后的光效，降低至起始光效的70％甚至50％。
实用新型内容
本实用新型解决的技术问题是，提供一种既能提高光源光效，也能延长光源寿命的MCPCB基板LED集成光源。
为了解决上述问题，本实用新型提供一种MCPCB基板LED集成光源，包括MCPCB基板、LED芯片阵列和荧光粉硅胶层，所述MCPCB基板与所述荧光粉硅胶层之间设有高反射涂层；
；所述MCPCB基板由下向上依次包括金属基层、导热绝缘层、电路层、阻焊层；所述LED芯片阵列焊接在电路层上。
进一步，所述高反射涂层的材料为对450nm到700nm光波长反射率达95％以上的材料。
进一步，所述高反射涂层材质是硅胶类或环氧树脂类。
进一步，所述涂层厚度从1微米到500微米。
进一步，所述高反射涂层通过用印刷的方式，如喷涂印刷，针筒点胶法，钢网印刷，丝网印刷等方法制备。
进一步，所述金属基层为铝板或铜板；所述导热绝缘层为热阻小、粘弹性能优良、具有抗热老化的能力特种材料；所述电路层为铜箔；所述阻焊层为白色油墨；所述LED芯片阵列为GaN芯片阵列。
本实用新型的优点是：
既能提高光源光效，也能延长光源寿命。
附图说明
图1为MCPCB基板结构示意图LED封装。
图2为阻焊层作为反射层的MCPCB基板LED集成光源结构示意图。
图3为镀银作为反射层的MCPCB基板LED集成光源结构示意图。
图4为本实用新型实施例的MCPCB基板LED集成光源结构示意图。
图5为本实用新型实施例的MCPCB基板LED集成光源顶视图。
具体实施方式
下文中将结合附图对本实用新型的实施例进行详细说明。需要说明的是，在不冲突的情况下，本申请中的实施例及实施例中的特征可以相互任意组合。
实施例一：
本实用新型提供了如附图4所示的一种MCPCB基板LED集成光源，包括MCPCB基板、LED芯片阵列6和荧光粉硅胶层5，MCPCB基板与荧光粉硅胶层5之间设有高反射涂层8。
MCPCB基板10由下向上依次包括金属基层4、导热绝缘层3、电路层2、阻焊层1。
高反射涂层8的材料为对450nm到700nm光波长反射率达95％以上的材 料。高反射涂层8材质是硅胶类或环氧树脂类。高反射涂层8厚度从1微米到500微米。高反射涂层8通过用印刷的方式，如喷涂印刷，针筒点胶法，钢网印刷，丝网印刷等方法制备。
金属基层4为铝板或铜板；导热绝缘层3为热阻小、粘弹性能优良、具有抗热老化的能力特种材料；电路层2为铜箔；阻焊层1为白色油墨；LED芯片阵列6为GaN芯片阵列。正、负极通过焊锡27焊接在电路层2上。
如附图5所示，LED芯片阵列由多颗芯片6串联、并联组成；芯片6串并线路连接通过MCPCB线路层。荧光粉硅胶层5设置在围坝胶30圈定的范围内。
芯片固晶通过焊锡来完成； 焊锡固晶的实现，是通过针筒点胶法，或沾胶法，或钢网印刷法把锡膏印到MCPCB的焊脚上，通过高温回流焊方式完成固晶。
生产本实用新型LED光源的方法，包括如下步骤：
(a)在LED芯片阵列6周边涂覆上高反射涂层8，烘烤成型；
(b)在MCPCB基板上焊接LED芯片阵列6；
(c)用荧光粉硅胶对LED芯片阵列6及高反射涂层8进行覆盖。
步骤(b)中的高反射涂层8为对450nm到700nm光波长反射率达95％以上的材料；高反射涂层8材质是硅胶类或环氧树脂类；高反射涂层8通过用印刷的方式，如喷涂印刷，针筒点胶法，钢网印刷，丝网印刷等方法制备。
所述步骤(b)中的LED芯片阵列为GaN芯片阵列；
所述步骤(b)中的焊接方式，是通过针筒点胶法，或沾胶法，或钢网印刷法把锡膏印到MCPCB的焊脚上，通过高温回流焊方式完成GaN芯片阵列和MCPCB的焊接。
以上所述仅为本实用新型的优选实施例而已，并不用于限制本实用新型，对于本领域的技术人员来说，本实用新型可以有各种更改和变化。凡在本实用新型的精神和原则之内，所作的任何修改、等同替换、改进等，均应包含在本实用新型的保护范围之内。
Claims (5)
1.一种MCPCB基板LED集成光源，包括MCPCB基板、LED芯片阵列和荧光粉硅胶层，其特征在于：
所述MCPCB基板与所述荧光粉硅胶层之间设有高反射涂层；
所述MCPCB基板由下向上依次包括金属基层、导热绝缘层、电路层、阻焊层；所述LED芯片阵列焊接在电路层上。
2.如权利要求1所述的一种MCPCB基板LED集成光源，其特征在于：
所述高反射涂层的材料为对450nm到700nm光波长反射率达95％以上的材料。
3.如权利要求2所述的一种MCPCB基板LED集成光源，其特征在于：
所述高反射涂层材质是硅胶类或环氧树脂类。
4.如权利要求3所述的一种MCPCB基板LED集成光源，其特征在于：
所述涂层厚度从1微米到500微米。
5.如权利要求4所述的一种MCPCB基板LED集成光源，其特征在于：
所述金属基层为铝板或铜板；所述电路层为铜箔；所述阻焊层为白色油墨；所述LED芯片阵列为GaN芯片阵列。
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201420008041.0U CN203850296U (zh) | 2014-01-07 | 2014-01-07 | 一种mcpcb基板led集成光源 |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201420008041.0U CN203850296U (zh) | 2014-01-07 | 2014-01-07 | 一种mcpcb基板led集成光源 |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN203850296U true CN203850296U (zh) | 2014-09-24 |
Family
ID=51563276
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201420008041.0U Expired - Lifetime CN203850296U (zh) | 2014-01-07 | 2014-01-07 | 一种mcpcb基板led集成光源 |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN203850296U (zh) |
Cited By (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN104329605A (zh) * | 2014-10-28 | 2015-02-04 | 浙江大学 | 梳齿状散热的led灯 |
| CN104409616A (zh) * | 2014-11-14 | 2015-03-11 | 易美芯光（北京）科技有限公司 | 一种覆晶led集成光源结构及其制备方法 |
| CN106887497A (zh) * | 2015-12-15 | 2017-06-23 | 易美芯光（北京）科技有限公司 | 一种低热阻led光源 |
| CN109155348A (zh) * | 2016-05-20 | 2019-01-04 | 奥斯兰姆奥普托半导体有限责任公司 | 辐射发射组件 |
| CN110225651A (zh) * | 2019-06-19 | 2019-09-10 | 深圳市洲明科技股份有限公司 | 线路板及显示屏 |
| CN112582524A (zh) * | 2019-09-12 | 2021-03-30 | 群创光电股份有限公司 | 发光装置及其制造方法 |
-
2014
- 2014-01-07 CN CN201420008041.0U patent/CN203850296U/zh not_active Expired - Lifetime
Cited By (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN104329605A (zh) * | 2014-10-28 | 2015-02-04 | 浙江大学 | 梳齿状散热的led灯 |
| CN104409616A (zh) * | 2014-11-14 | 2015-03-11 | 易美芯光（北京）科技有限公司 | 一种覆晶led集成光源结构及其制备方法 |
| CN106887497A (zh) * | 2015-12-15 | 2017-06-23 | 易美芯光（北京）科技有限公司 | 一种低热阻led光源 |
| CN109155348A (zh) * | 2016-05-20 | 2019-01-04 | 奥斯兰姆奥普托半导体有限责任公司 | 辐射发射组件 |
| CN109155348B (zh) * | 2016-05-20 | 2021-10-15 | 奥斯兰姆奥普托半导体有限责任公司 | 辐射发射组件 |
| CN110225651A (zh) * | 2019-06-19 | 2019-09-10 | 深圳市洲明科技股份有限公司 | 线路板及显示屏 |
| CN112582524A (zh) * | 2019-09-12 | 2021-03-30 | 群创光电股份有限公司 | 发光装置及其制造方法 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| CN203850296U (zh) | 一种mcpcb基板led集成光源 | |
| CN203983324U (zh) | 一种采用倒装蓝光芯片封装的led集成光源 | |
| CN104766916A (zh) | 一种采用倒装蓝光芯片封装的led集成光源 | |
| CN105226167A (zh) | 一种全角度发光的柔性led灯丝及其制造方法 | |
| CN102032483B (zh) | Led面光源 | |
| KR101136054B1 (ko) | 방열 효과를 높이고, 발광 효율을 향상시킬 수 있는 발광 다이오드의 패키지 구조와 그 제조 방법 | |
| TWI648869B (zh) | 發光裝置 | |
| JP2011018871A (ja) | 熱伝導接着剤を位置決めするための窪み領域を有するｌｅｄの実装構造とその製造方法 | |
| CN102709278A (zh) | 荧光薄膜平面薄片式led阵列光源 | |
| JP2015111620A (ja) | 発光デバイス及びその製造方法 | |
| JP2007266358A (ja) | 発光装置および照明装置 | |
| CN104681691A (zh) | 一种低光衰的覆晶封装的led集成光源结构及其制备方法 | |
| CN104766856A (zh) | 一种mcpcb基板led集成光源及其生产方法 | |
| CN107305922B (zh) | 一种带电源一体化360度立体发光光源的制备方法 | |
| CN105575957B (zh) | 一种白光led的cob光源 | |
| CN102723324A (zh) | 一种双面出光平面薄片式led封装结构 | |
| CN202712175U (zh) | 荧光薄膜平面薄片式led阵列光源 | |
| CN204407356U (zh) | 一种低光衰的覆晶封装的led集成光源结构 | |
| CN202796951U (zh) | 一种双荧光薄膜双面出光平面薄片式led阵列光源 | |
| US20140197434A1 (en) | Light emitting diode device and method for manufacturing heat dissipation substrate | |
| CN202712177U (zh) | 一种双面出光平面薄片式led封装结构 | |
| CN204592939U (zh) | Led管灯 | |
| CN203351666U (zh) | Led模组 | |
| CN209912892U (zh) | 一种cob光源 | |
| TW201403870A (zh) | 發光二極體元件及其封裝方法 |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| C14 | Grant of patent or utility model | ||
| GR01 | Patent grant | ||
| EE01 | Entry into force of recordation of patent licensing contract |
Assignee: SHENZHEN BETOP ELECTRONICS Co.,Ltd. Assignor: SHINEON (BEIJING) TECHNOLOGY Co.,Ltd. Contract record no.: 2014440000470 Denomination of utility model: LED integrated light source adopting MCPCB substrate and production method thereof Granted publication date: 20140924 License type: Exclusive License Record date: 20141201 |
|
| LICC | Enforcement, change and cancellation of record of contracts on the licence for exploitation of a patent or utility model | ||
| EC01 | Cancellation of recordation of patent licensing contract |
Assignee: SHENZHEN BETOP ELECTRONICS Co.,Ltd. Assignor: SHINEON (BEIJING) TECHNOLOGY Co.,Ltd. Contract record no.: 2014440000470 Date of cancellation: 20170925 |
|
| EC01 | Cancellation of recordation of patent licensing contract | ||
| CX01 | Expiry of patent term |
Granted publication date: 20140924 |
|
| CX01 | Expiry of patent term |