CN203820885U

CN203820885U - Novel PECVD (plasma enhanced chemical vapor deposition) coating support plate

Info

Publication number: CN203820885U
Application number: CN201420236062.8U
Authority: CN
Inventors: 武同乐; 张金伟; 陈哲
Original assignee: Yingli Energy China Co Ltd
Current assignee: Yingli Energy China Co Ltd
Priority date: 2014-05-09
Filing date: 2014-05-09
Publication date: 2014-09-10
Anticipated expiration: 2024-05-09

Abstract

The utility model discloses a novel PECVD (plasma enhanced chemical vapor deposition) coating support plate and belongs to the technical field of solar photovoltaic cell manufacturing. The support plate comprises a support plate body, wherein the support plate body adopts a frame-shaped structure made of graphite, inner frame edges of the support plate body are slopes, outer frame edges are still original sections, clamping corners are arranged at interior corners of the support plate body and are 1/4 arc slabs, and two end surfaces of each clamping corner are flush with the lower end of each slope. According to the support plate, edge structures of the support plate are optimized, and the contact range of a cell piece and the support plate can be reduced on the premise that the cell piece is supported by the support plate, so that phenomena of red edges of the cell piece are reduced, and the problem of color difference in the cell piece can be solved.

Description

The upper plated film support plate of a kind of new PE CVD

Technical field

The utility model relates to the upper plated film support plate of a kind of new PE CVD, belongs to solar-energy photo-voltaic cell manufacturing technology field.

Background technology

Solar cell, after the operations such as making herbs into wool, diffusion and PECVD, has been made PN knot, can, at generation current under illumination, for the electric current producing is derived, need on battery surface, make positive and negative two electrodes.PECVD operation is in silicon chip surface plating SiNx (or AlOx/a-Si, etc.), and silicon chip needs special support plate that silicon chip is placed on support plate to send into PECVD board again, use silicon nitride gas to carry out upper plated film to silicon chip surface.

Existing solar cell support plate formula PECVD filming equipment, all adopts the support plate of graphite material, and support plate thickness is larger.At present, in solar panels manufacturing concern, the edge corner angle of support plate are clearly demarcated, thickness is generally at 5.0 ± 0.2 millimeters, because used silicon wafer thickness is 0.2 millimeter, in the time using this kind of upper plated film support plate to be written into cell piece, because support plate Thickness Ratio cell piece is thick, in the time using support plate to be written into silicon chip and to carry out plated film, due to thickness, compared with having greatly, part silicon nitride deposition is influenced causes the inhomogeneous of deposition to the support plate of adjacent silicon chip edge, the cell piece edge that makes to be close to plated film support plate reddens compared with thin because of the silicon nitride thickness of deposition, thereby there is aberration phenomenon, affect battery outward appearance, cell piece yield and efficiency of conversion are reduced.

Utility model content

The technical problems to be solved in the utility model is to provide the upper plated film support plate of a kind of new PE CVD, this support plate is optimized processing to its marginal texture, ensureing under the prerequisite of carrier for bearing cell piece, can reduce the contact range of cell piece and support plate, thereby reduce the red limit phenomenon of cell piece, can solve aberration problem in cell piece sheet.

For solving the problems of the technologies described above, technical solution adopted in the utility model is: the upper plated film support plate of a kind of new PE CVD, comprise support plate body, the frame-shaped structure that described support plate body is graphite material, the border that it is characterized in that described support plate body is inclined-plane, and frame outer keeps original cross section, and the interior angle place of support plate body is equipped with Ka Jiao, described Ka Jiao is 1/4 arc plate, and two end face is concordant with the lower end on inclined-plane.

Said structure is described further, and in the framework of described support plate body interior, its surface is two symmetrical inclined-planes, and the upper end on two inclined-planes overlaps.

Said structure is described further, two square edge appearance of described Ka Jiao etc., and the length ratio of square edge and inside casing is: 1/10～1/15.

Said structure is described further, and the vertical direction height on described inclined-plane is identical with carried silicon chip height, and the horizontal direction width on inclined-plane is former frame width 1/2.

Said structure is described further, and the square edge of described arc plate is in the transition of arc-shaped side center line, and the thickness of its plate reduces gradually, and the thickness that makes arc form midline is less than straight line place thickness.

The beneficial effect that adopts technique scheme to produce is: the corner angle in the utility model in support plate main body are modified, it is carried out to planarization process, replace corner angle by plane, can reduce the thickness at the upper plated film support plate of PE edge, can reduce like this near the impact on silicon nitride deposition of graphite carrying plate cell piece edge, allow cell piece deposited silicon nitride adequately and uniformly, uniform coated, thereby improve red limit, cell piece edge problem, reduce aberration in cell piece sheet; Ka Jiao in the utility model is in the situation that ensureing bearing safety, make it simple in structure as far as possible, and little with the contact area of silicon chip, therefore be designed to arc-shaped structure, and upper and lower end face and hypotenuse lower rim are flat and, can ensure that like this silicon chip can be placed in framework inside, avoid rocking, prevent from damaging silicon chip; In addition, the upper and lower end face of Ka Jiao can be designed to curved surface, the attenuate gradually to the midline from edge, can make upper and lower end face and the silicon chip surface laminating of arc like this, realizes and supporting.

Brief description of the drawings

Below in conjunction with the drawings and specific embodiments, the utility model is described in further detail.

Fig. 1 is structural representation of the present utility model;

Fig. 2 is the another kind of structure formation of Ka Jiao in Fig. 1;

Wherein: 1, border, 2, Ka Jiao, 3, frame outer.

Embodiment

1 is known with reference to the accompanying drawings, the utility model is specifically related to the upper plated film support plate of a kind of new PE CVD, comprise support plate body, the frame-shaped structure that described support plate body is graphite material, the border 1 of support plate body is inclined-plane, frame outer 3 keeps original cross section, the interior angle place of support plate body is equipped with card angle 2, the arc plate that card angle 2 is 1/4, its upper and lower two end faces are concordant with the lower end on inclined-plane, two square edge appearance at card angle 2 etc., and the length ratio of square edge and inside casing is: 1/10～1/15.

The technical solution of the utility model is to be modified in the sharp-featured edge of support plate, replaces corner angle with inclined-plane, and in the framework of described support plate body interior, its surface is two symmetrical inclined-planes, and the upper end on two inclined-planes overlaps.This structure can reduce the thickness at the upper plated film support plate of PE edge, and in the normal transport not affecting after support plate loading cell piece, available this method reduces support plate thickness, reduces the impact of graphite carrying plate edge on silicon nitride film deposition, causes the aberration at cell piece edge.

The vertical direction height of the framework ramp of the utility model PECVD plated film support plate is identical with carried silicon chip height, and the horizontal direction width on inclined-plane is former frame width 1/2.The upper plated film support plate edge thickness of former PECVD, for being generally 5.0 ± 0.2 millimeters, is now worn into the straight angle by its edge corner angle, and thickness is 4.2 ± 0.2 millimeters, with the same thickness in card angle (this thickness also can require change according to cell piece).The silicon wafer thickness that existing our company is used is 0.2 millimeter, when the upper plated film support plate of PECVD after use changes is written into cell piece, support plate edge and cell piece height relative decrease, use this programme, in the time that support plate can successfully be written into cell piece and carries out normal transport, can reduce the impact of support plate edge near silicon nitride deposition cell piece, thereby allow cell piece deposited silicon nitride adequately and uniformly, uniform coated, thus red limit, cell piece edge problem improved, reduce aberration in cell piece sheet.

As shown in Figure 2, be the another kind of structure formation of coming unglued, the square edge of this arc plate is in the transition of arc-shaped side center line, and the thickness of its plate reduces gradually, and the thickness that makes arc form midline is less than straight line place thickness.The attenuate gradually to the midline from edge, can make upper and lower end face and the silicon chip surface laminating of arc like this, realizes and supporting, and does not affect the transport of silicon chip.

Claims

1. the upper plated film support plate of new PE CVD, comprise support plate body, the frame-shaped structure that described support plate body is graphite material, the border (1) that it is characterized in that described support plate body is inclined-plane, frame outer (3) keeps original cross section, the interior angle place of support plate body is equipped with Ka Jiao (2), the arc plate that described Ka Jiao (2) is 1/4, and its upper and lower two end faces are concordant with the lower end on inclined-plane.

2. the upper plated film support plate of a kind of new PE CVD according to claim 1, is characterized in that the framework in described support plate body interior, and its surface is two symmetrical inclined-planes, and the upper end on two inclined-planes overlaps.

3. the upper plated film support plate of a kind of new PE CVD according to claim 2, it is characterized in that two square edge appearance of described Ka Jiao (2) etc., and the length ratio of square edge and inside casing is: 1/10～1/15.

4. the upper plated film support plate of a kind of new PE CVD according to claim 3, is characterized in that the vertical direction height on described inclined-plane is identical with carried silicon chip height, and the horizontal direction width on inclined-plane is former frame width 1/2.

5. the upper plated film support plate of a kind of new PE CVD according to claim 1, is characterized in that the square edge of described arc plate is in the transition of arc-shaped side center line, and the thickness of its plate reduces gradually, and the thickness that makes arc form midline is less than straight line place thickness.