CN202965448U - Positive electrode net plate suitable for solar energy high sheet resistance cell - Google Patents
Positive electrode net plate suitable for solar energy high sheet resistance cell Download PDFInfo
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- CN202965448U CN202965448U CN2012206985215U CN201220698521U CN202965448U CN 202965448 U CN202965448 U CN 202965448U CN 2012206985215 U CN2012206985215 U CN 2012206985215U CN 201220698521 U CN201220698521 U CN 201220698521U CN 202965448 U CN202965448 U CN 202965448U
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- grid line
- positive electrode
- solar energy
- sheet resistance
- grid
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- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
- Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
- Y02P70/50—Manufacturing or production processes characterised by the final manufactured product
Abstract
The utility model relates to a positive electrode net plate suitable for solar energy high sheet resistance cells. The positive electrode net plate suitable for the solar energy high sheet resistance cells comprises a silicon slice body and is characterized in that suede surfaces are arranged on the silicon slice body, and high sheet resistance emitter junctions are arranged on the suede surfaces. Silicon nitride films are arranged on surfaces of the high sheet resistance emitter junctions, and grid line layers are arranged on the silicon nitride films. At the same time, a dense grid line area and a secondary dense grid line area are arranged on the grid line layers, and the dense grid line area is in the middle of the grid line layers. Therefore, the problems of larger loss of resistance in series of a central high sheet resistance area and shading loss of an edge low sheet resistance area are solved through distribution of grid lines at different intervals, and efficiency of different battery pieces is improved. At the same time, with the existence of a grid line changing area, unit consumption of printing is reduced, and paste is saved. Moreover, the positive electrode net plate suitable for the solar energy high sheet resistance cells is simple in structure, and easy to popularize in flow line production.
Description
Technical field
The utility model relates to a kind of positive electrode half tone, relates in particular to a kind of positive electrode half tone that is applicable to solar energy high square resistance battery.
Background technology
With regard to existing photovoltaic industry, in the crystal silicon solar sheet effect of positive electrode gate line electrode huge, it serves as the effect of collecting photo-generated carrier.Simultaneously, for common P mold base crystal silicon battery, what (size of series resistance) have determined the quality of the electric property of cell piece to a great extent for what (sizes of short circuit current) and the loss of carrier in collection process of the generation of carrier.
Simultaneously, improving battery efficiency is mainly to coordinate the high square resistance emitter junction to reach by close grid line positive electrode design: high square resistance is mainly to improve blue response, but because sheet resistance is high, the lateral resistance of grid line increases, take close grid line printing to reduce the loss of lateral resistance, reach the purpose of raising efficiency.
The photovoltaic corporate boss will adopt the POCL3 liquid source to spread to prepare the high square resistance emitter junction both at home and abroad, adopts the high square resistance emitter junction uniformity of the method preparation relatively poor, and in sheet, the center is more much larger than the regional sheet resistance value in edge; As adopting common close grid line half tone design, the larger regional series resistance losses of central party resistance is large, and shading loss in edge is larger, makes the improved efficiency of monoblock cell piece not obvious.
The utility model content
The purpose of this utility model is exactly in order to solve the above-mentioned problems in the prior art, and a kind of positive electrode half tone that is applicable to solar energy high square resistance battery is provided.
The purpose of this utility model is achieved through the following technical solutions:
Be applicable to the positive electrode half tone of solar energy high square resistance battery, include the silicon chip body, wherein: be distributed with matte on described silicon chip body, be distributed with the high square resistance emitter junction on described matte, described high square resistance emitter junction surface distributed has silicon nitride film, be distributed with grid line layer on described silicon nitride film, be distributed with intensive grid region and time close grid region on described grid line layer, described intensive grid region is positioned in the middle part of grid line layer.
Further, the above-mentioned positive electrode half tone that is applicable to solar energy high square resistance battery, wherein: the spacing in described intensive grid region between grid line is less than the spacing between grid line in inferior close grid region.
Further, the above-mentioned positive electrode half tone that is applicable to solar energy high square resistance battery, wherein: in described intensive grid region, the radical of grid line is greater than the radical of grid line in inferior close grid region.
Further, the above-mentioned positive electrode half tone that is applicable to solar energy high square resistance battery, wherein: the grid line in described inferior close grid region equidistantly distributes.
Further, the above-mentioned positive electrode half tone that is applicable to solar energy high square resistance battery, wherein: the grid line in described intensive grid region equidistantly distributes.
Again further, the above-mentioned positive electrode half tone that is applicable to solar energy high square resistance battery, wherein: the spacing in described inferior close grid region between grid line successively reduces to the spacing between intensive grid region.
The advantage of technical solutions of the utility model is mainly reflected in: characteristic relatively poor according to the uniformity of high square resistance emitter junction, the distribution mode of design unequal-interval grid line, solve the center high square resistance value zone larger problem of series resistance losses and edge low square resistance zone shading loss problem, improved cell piece efficient.Simultaneously, rely on the existence of grid line region of variation, the unit consumption in the time of can having reduced printing is saved slurry.Moreover this practical new unitary construction is simple, is easy to streamline production and promotes.
Description of drawings
The purpose of this utility model, advantage and disadvantage will be for illustration and explanation by the non-limitative illustration of following preferred embodiment.These embodiment are only the prominent examples of using technical solutions of the utility model, and all technical schemes of taking to be equal to replacement or equivalent transformation and forming are within all dropping on the claimed scope of the utility model.In the middle of these accompanying drawings,
Fig. 1 is the organigram that in intensive grid region, grid line is equidistant distribution;
Fig. 2 is the organigram that in intensive grid region, grid line is the equal difference change profile.
1 intensive grid region
The specific embodiment
The positive electrode half tone that is applicable to solar energy high square resistance battery as shown in Figure 1 and Figure 2 includes the silicon chip body, and its unusual part is: be distributed with matte on this practical new silicon chip body that adopts, be distributed with the high square resistance emitter junction on matte.Simultaneously, in high square resistance emitter junction surface distributed, silicon nitride film is arranged, be distributed with grid line layer on silicon nitride film.And, different according to the spacing between grid line according to grid line layer, be divided into intensive grid region 1 and time close grid region, intensive grid region 1 is positioned in the middle part of grid line layer.
With regard to the better embodiment of the utility model one, the spacing in intensive grid region 1 between grid line is less than the spacing between grid line in inferior close grid region.And in order to consolidate the effect of dense distribution, in intensive grid region 1, the radical of grid line is greater than the radical of grid line in inferior close grid region.
Further, in order to consolidate the high square resistance battery availability factor of positive electrode half tone, the grid line in inferior close grid region equidistantly distributes.Certainly, consider to coordinate above-mentioned distribution effect, the grid line in intensive grid region 1 also can equidistantly distribute.Specifically can as shown in Figure 1, consider and distinguish intensive grid region 1 and time close grid region, wherein spacing d1＞spacing d2.
Again further, consider better to promote this practical new whole structure, the spacing in inferior close grid region between grid line successively reduces to the spacing between intensive grid region 1.Specifically, the grating spacing in intensive grid region 1 is equal difference and changes, wherein d1＞dm; D1＞dm-1; Difference+the dm-1 of dm=grating spacing.
Can find out by above-mentioned character express, after adopting the utility model, characteristic relatively poor according to the uniformity of high square resistance emitter junction, the distribution mode of design unequal-interval grid line, solve the center high square resistance value zone larger problem of series resistance losses and edge low square resistance zone shading loss problem, improved cell piece efficient.Simultaneously, rely on the existence of grid line region of variation, the unit consumption in the time of can having reduced printing is saved slurry.Moreover this practical new unitary construction is simple, is easy to streamline production and promotes.
Claims (6)
1. be applicable to the positive electrode half tone of solar energy high square resistance battery, include the silicon chip body, it is characterized in that: be distributed with matte on described silicon chip body, be distributed with the high square resistance emitter junction on described matte, described high square resistance emitter junction surface distributed has silicon nitride film, be distributed with grid line layer on described silicon nitride film, be distributed with intensive grid region and time close grid region on described grid line layer, described intensive grid region is positioned in the middle part of grid line layer.
2. the positive electrode half tone that is applicable to solar energy high square resistance battery according to claim 1, it is characterized in that: the spacing in described intensive grid region between grid line is less than the spacing between grid line in inferior close grid region.
3. the positive electrode half tone that is applicable to solar energy high square resistance battery according to claim 1, it is characterized in that: in described intensive grid region, the radical of grid line is greater than the radical of grid line in inferior close grid region.
4. the positive electrode half tone that is applicable to solar energy high square resistance battery according to claim 1 is characterized in that: the grid line in described close grid region equidistantly distributes.
5. the positive electrode half tone that is applicable to solar energy high square resistance battery according to claim 1, it is characterized in that: the grid line in described intensive grid region equidistantly distributes.
6. the positive electrode half tone that is applicable to solar energy high square resistance battery according to claim 1 is characterized in that: the spacing in described close grid region between grid line successively reduces to the spacing between intensive grid region.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN2012206985215U CN202965448U (en) | 2012-12-17 | 2012-12-17 | Positive electrode net plate suitable for solar energy high sheet resistance cell |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN2012206985215U CN202965448U (en) | 2012-12-17 | 2012-12-17 | Positive electrode net plate suitable for solar energy high sheet resistance cell |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN202965448U true CN202965448U (en) | 2013-06-05 |
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| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN2012206985215U Expired - Fee Related CN202965448U (en) | 2012-12-17 | 2012-12-17 | Positive electrode net plate suitable for solar energy high sheet resistance cell |
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| CN (1) | CN202965448U (en) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN105291567A (en) * | 2015-09-17 | 2016-02-03 | 国网天津市电力公司 | Screen printing plate for silk screen printing of three-main grid battery |
-
2012
- 2012-12-17 CN CN2012206985215U patent/CN202965448U/en not_active Expired - Fee Related
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN105291567A (en) * | 2015-09-17 | 2016-02-03 | 国网天津市电力公司 | Screen printing plate for silk screen printing of three-main grid battery |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| C14 | Grant of patent or utility model | ||
| GR01 | Patent grant | ||
| CP01 | Change in the name or title of a patent holder | ||
| CP01 | Change in the name or title of a patent holder |
Address after: 215542 1 Tenghui Road, Chang Kun Industrial Park, Sha Jia Bang, Changshou City, Jiangsu Patentee after: SUZHOU TALESUN SOLAR TECHNOLOGIES Co.,Ltd. Address before: 215542 1 Tenghui Road, Chang Kun Industrial Park, Sha Jia Bang, Changshou City, Jiangsu Patentee before: ZHONGLI TALESUN SOLAR Co.,Ltd. |
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| CF01 | Termination of patent right due to non-payment of annual fee | ||
| CF01 | Termination of patent right due to non-payment of annual fee |
Granted publication date: 20130605 Termination date: 20211217 |