CN203798736U - High-voltage biasing circuit of avalanche photo diode (APD) applied to weak fluorescence measurement - Google Patents
High-voltage biasing circuit of avalanche photo diode (APD) applied to weak fluorescence measurement Download PDFInfo
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- CN203798736U CN203798736U CN201420060214.3U CN201420060214U CN203798736U CN 203798736 U CN203798736 U CN 203798736U CN 201420060214 U CN201420060214 U CN 201420060214U CN 203798736 U CN203798736 U CN 203798736U
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Abstract
The utility model discloses a high-voltage biasing circuit of an avalanche photo diode (APD) applied to weak fluorescence measurement. The high-voltage biasing circuit comprises a control signal unit, a control signal conditioning unit, a temperature-drift-free amplification unit, an output buffer unit and a feedback unit, wherein a control signal is conditioned through the control signal conditioning unit and is amplified to obtain the needed bias voltage value through the temperature-drift-free amplification unit; and the output stability is controlled through the output buffer unit and the feedback unit. The problem that the voltage of a previous high-voltage biasing circuit drifts along with temperature is solved by adopting a method for coupling temperature drift coefficients between the components; the high-voltage biasing circuit has the advantages that high-voltage output with high temperature stability is realized, the output reducing due to signal increase and the like are avoided; and moreover, the high-voltage biasing requirement during APD operation is met.
Description
Technical field
The utility model belongs to biomedical detection field, is specifically related to be applied to the HVB high voltage bias circuit of the avalanche diode APD of faint fluorescence measurement.
Background technology
At biomedical sector, fluorescent technique is often used to carry out qualitative and quantitative measurment, the research of cell surface immune protein, DNA content mensuration of material etc.Because fluorescence intensity is very faint, and APD(avalanche diode) can realize avalanche multiplication, and quantum efficiency is high, and low price, therefore is often used to test fluorescence intensity.The normal need of work tens of APD is to the HVB high voltage bias of several hectovolts, and its multiplication factor changes along with the rising of voltage, therefore in order to guarantee measurement result accuracy, need to provide stable bias voltage, to guarantee that APD carries out the measurement of fluorescence intensity accurately.
APD is at optical communication field, obtained application very widely, as US Patent No. 5625181A, and US6031219A, US6643472B1 etc., but have very large different from its application demand at biomedical sector.In optical communication, optoelectronic receiver only needs ' 0 ' (nothing) of resolved light signal and the difference of ' 1 ' (having) conventionally, and at biomedical sector, the research of fluorescence is not only rested on stage of ' 0 ' (nothing) and ' 1 ' (having), but to tell two or more, 8 kinds of different strength signals (flow cytometry) even, and guarantee the good linearity, the stability requirement of the bias voltage of therefore exporting for APD is more strict.
Optical receiver system described in US Patent No. 5625181A is mainly by SELF-BIAS SECTION(automatic biasing part), APD BIAS CONTROL LOOP SECTION(avalanche diode biasing control loop part), TEMPERATURE COMPENSATION SECTION(temperature compensation part) three parts form, and it deposits problem both ways:
1, bias voltage output meeting reduces along with the increase of light signal.In automatic biasing part, when light signal increases, the electric current that flows through APD can increase, and this electric current forms pressure drop meeting increase (R1 is also about larger 1M conventionally) by R1, and this can cause the bias voltage of APD to reduce;
2, bias voltage can change along with the drift of temperature.In avalanche diode biasing control loop part, when temperature drift, the intrinsic temperature of the PN junction of TR1 is floated for 2mv/ ℃, and wherein the base stage of TR1 and the voltage between emitter (Vbe) have the temperature drift of 2mv/ ℃, and total temperature drift can be calculated with following formula:
, suppose that R1/R4 equals 50,2 ℃ of temperature drifts, bias voltage drift 200mV, such bias voltage drift will cause the change in gain of APD, thereby affects the accuracy of result.Although there is temperature compensation part, it is a general value that but the temperature of TR1 is floated coefficient, it is also unpractical that each module is carried out to meticulous experiment compensates, so TR1 is just used for the variation of the APD gain that compensation causes due to temperature variation conventionally.
Utility model content
The purpose of this utility model is along with the increase of light signal, to reduce the problem that can change along with the drift of temperature with bias voltage in order to overcome the bias voltage output meeting of traditional APD HVB high voltage bias circuit, makes APD can carry out more accurately the test of bioluminescence aspect.
For realizing above-mentioned technical purpose, reach above-mentioned technique effect, the utility model is achieved through the following technical solutions:
Be applied to the HVB high voltage bias circuit of the avalanche diode APD of faint fluorescence measurement, comprise control signal unit, control signal conditioning unit, without temperature, float amplifying unit, output buffer cell and feedback unit, the control signal of described control signal unit output makes its output signal be applicable to specific APD pipe after the unit adjustment of described signal condition, this output signal is floated amplifying unit amplification through described without temperature, export a high-voltage signal, this electric signal is exported the bias voltage of APD pipe after described output buffer cell, the output voltage of described output buffer cell is input in described signal condition unit and forms backfeed loop through described feedback unit output feedback signal, wherein:
Described nothing temperature is floated amplifying unit and is mainly comprised two complementary positive-negative-positive triodes and a NPN type triode, and the emitter of wherein said positive-negative-positive triode connects the base stage of a described NPN type triode;
Further, described control signal unit comprises temperature survey chip, described signal condition unit mainly comprises totalizer, the output terminal of described temperature survey chip connects the inverting input of described totalizer by adjustable resistance R22, the inverting input of described totalizer is connection control signal end Vctrl also, and the output terminal of described totalizer also connects the base stage of described positive-negative-positive triode;
Preferably, the value of described adjustable resistance R22 regulates according to the temperature coefficient of avalanche diode, the variation of the gain of the avalanche diode that compensation causes along with temperature variation.
Further, described output buffer cell comprises a 2nd NPN type triode, the base stage of described the 2nd NPN type triode connects the collector of a described NPN type triode, described feedback unit comprises divider resistance R51 and feedback resistance R52, one end of described feedback resistance R52 connects the emitter of described the 2nd NPN type triode, the other end connects respectively positive input and the described divider resistance R51 of described totalizer, the other end ground connection of described divider resistance R51.
Preferably, described divider resistance R51 can be formed in parallel by two or more resistance.
Preferably, described feedback resistance R52 can be in series by two resistance or a plurality of resistance.
The beneficial effects of the utility model are:
The way that the utility model adopts the temperature drift coefficient between components and parts to intercouple, has eliminated the voltage of HVB high voltage bias circuit in the past with the problem of temperature drift, can realize the High voltage output of high-temperature stability, HVB high voltage bias demand while meeting APD work.
Accompanying drawing explanation
Fig. 1 is the block diagram of system of the present utility model;
Fig. 2 is biasing circuit figure of the present utility model, wherein, in order to narrate conveniently, in figure, resistance 21, adjustable resistance 22, resistance 23, resistance 32, resistance 34, resistance 35, divider resistance 51 and feedback resistance 52 are distinguished corresponding R21, R22, R23, R32, R34, R35, R51 and R52 in formula.
Embodiment
Below with reference to the accompanying drawings and in conjunction with the embodiments, describe the utility model in detail.
Shown in Fig. 1, be applied to the HVB high voltage bias circuit of the avalanche diode APD of faint fluorescence measurement, comprise control signal unit 1, control signal conditioning unit 2, without temperature, float amplifying unit 3, output buffer cell 4 and feedback unit 5;
Shown in Fig. 2, described nothing temperature is floated amplifying unit 3 and is mainly comprised two complementary positive-negative-positive triodes 31 and a NPN type triode 33, the emitter of wherein said positive-negative-positive triode 31 connects the base stage of a described NPN type triode 33, and meet high level Vcc by resistance 32, the grounded collector of described positive-negative-positive triode 31, the emitter of a described NPN type triode 33 is by resistance 35 ground connection, and its collector meets high level HV by resistance 34;
Described control signal unit 1 comprises temperature survey chip 11, described signal condition unit 2 mainly comprises totalizer 24, the output terminal of described temperature survey chip 11 connects the inverting input of described totalizer 24 by adjustable resistance 22, the inverting input of described totalizer 24 is also respectively by the output terminal of resistance 21 and resistance 23 connection control signal end Vctrl and totalizer 24, and the output terminal of described totalizer 24 also connects the base stage of described positive-negative-positive triode 31;
Described output buffer cell 4 comprises a 2nd NPN type triode 41, the base stage of described the 2nd NPN type triode 41 connects the collector of a described NPN type triode 33, the collector of described the 2nd NPN type triode 41 meets high level HV, described feedback unit 5 comprises divider resistance 51 and feedback resistance 52, one end of described feedback resistance 52 connects the emitter of described the 2nd NPN type triode 41, the other end connects respectively positive input and the described divider resistance 51 of described totalizer 24, the other end ground connection of described divider resistance 51.
Continuation is with reference to Fig. 2, in the present embodiment, set the scale-up factor k1=R23/R21 of the control signal of totalizer 24, the ratio k2=R23/R22 of totalizer 24 temperature survey chip signal output, without temperature, float the gain coefficient M=R34/R35 of amplifying unit 3, feedback unit 5 feedback factor β=R51/ (R51+R52), the APD bias voltage of output is Vapd, input control signal Vctrl, temperature survey chip signal output Vt, imbalance value b(refers to the joint effect factor of the Vbe of not matching value between triode 31 and triode 33 and triode 41), so output has following relation with input:
(1-1)
Three of above-mentioned formula (1-1), first is control signal gain, and second is the gain of temperature survey chip signal output, and the 3rd is intercept, and first two is the magnitude of voltage that 0 o'clock circuit is exported.
According to above-mentioned formula (1-1), can build according to demand actual circuit, example is as follows:
Suppose that Vctrl scope is 0 to 3V, adopt a APD pipe of shore pine, its temperature coefficient k=0.65V/ ℃, high pressure HV is 200V, needs the voltage range regulating from 70V to 150V.Temperature survey chip is output as 10 mV/ ℃, exports 250mV when room temperature 25 is spent.
According to the circuit structure framework circuit providing in Fig. 2, and determine that according to formula parameter step is as follows:
1, determine control signal gain.The amplitude of oscillation 0 to 3v of control signal should be corresponding to the voltage-regulation scope 70V requiring to 150V, so
;
2, determine the gain of temperature survey chip signal output.In order to realize the tc compensation of APD pipe, need temperature survey chip signal output can compensate APD pipe temperature coefficient k=0.65V/ ℃, so
, integrating step 1 can obtain,
;
3, determine minimum output voltage signal.Minimum output voltage signal is 70V, considers in room temperature situation, and the output voltage values of temperature measurement signal is not 0, and getting it is 25 ℃, is output as 0.25V, so Vh=200V
;
4, calculate k1, k2, the value of β.Suppose without warm problem of floating the power consumption of amplifying unit gain M=50(consideration, to get R34=1M Ω, R35=20k Ω in step 3), in the situation that M is definite, b is a constant, it affects the constant that just superposes on the magnitude of voltage of calculating, is rule of thumb made as 5V,
, in conjunction with
and step 1, the formula in step 2 calculates
,
,
;
5, determine resistance value.Get R23=10k Ω, R21=5.17 k Ω so, R22=2.12 k Ω,
Get R52=10.2M, R51=70.6 k Ω so,
R32 is that current-limiting resistance is got 1k Ω, and Vcc gets 5V;
6, fine setting.In order to reduce costs, to gain, require undemanding resistance to be adjusted into standard value, get R21=5.1 k Ω, R52 is 2 5.1M Ω series connection, R51 is taken as 68k Ω.R22 is taken as the adjustable resistance of 5k Ω.Triode model 31 pipes adopt MPSA92, and 33 and 41 pipes adopt MPSA42.By
be recalculated as R22=2.212, control signal gain
.
The foregoing is only preferred embodiment of the present utility model, be not limited to the utility model, for a person skilled in the art, the utility model can have various modifications and variations.All within spirit of the present utility model and principle, any modification of doing, be equal to replacement, improvement etc., within all should being included in protection domain of the present utility model.
Claims (6)
1. at the HVB high voltage bias circuit that is applied to the avalanche diode APD of faint fluorescence measurement, comprise control signal unit (1), control signal conditioning unit (2), output buffer cell (4) and feedback unit (5), is characterized in that, also comprise without temperature and float amplifying unit (3), wherein:
Describedly without temperature, float amplifying unit (3) and mainly comprise two complementary positive-negative-positive triodes (31) and a NPN type triode (33), the emitter of wherein said positive-negative-positive triode (31) connects the base stage of a described NPN type triode (33).
2. the HVB high voltage bias circuit that is applied to the avalanche diode APD of faint fluorescence measurement according to claim 1, it is characterized in that, described control signal unit (1) comprises temperature survey chip (11), described signal condition unit (2) mainly comprises totalizer (24), the output terminal of described temperature survey chip (11) connects the inverting input of described totalizer (24) by adjustable resistance (22), the inverting input of described totalizer (24) is connection control signal end Vctrl also, the output terminal of described totalizer (24) also connects the base stage of described positive-negative-positive triode (31).
3. the HVB high voltage bias circuit that is applied to the avalanche diode APD of faint fluorescence measurement according to claim 2, it is characterized in that, the value of described adjustable resistance (22) regulates according to the temperature coefficient of avalanche diode, the variation of the gain of the avalanche diode that compensation causes along with temperature variation.
4. the HVB high voltage bias circuit that is applied to the avalanche diode APD of faint fluorescence measurement according to claim 2, it is characterized in that, described output buffer cell (4) comprises a 2nd NPN type triode (41), the base stage of described the 2nd NPN type triode (41) connects the collector of a described NPN type triode (33), described feedback unit (5) comprises divider resistance (51) and feedback resistance (52), one end of described feedback resistance (52) connects the emitter of described the 2nd NPN type triode (41), the other end connects respectively positive input and the described divider resistance (51) of described totalizer (24), the other end ground connection of described divider resistance (51).
5. the HVB high voltage bias circuit that is applied to the avalanche diode APD of faint fluorescence measurement according to claim 4, is characterized in that, described divider resistance (51) can be formed in parallel by two or more resistance.
6. the HVB high voltage bias circuit that is applied to the avalanche diode APD of faint fluorescence measurement according to claim 4, is characterized in that, described feedback resistance (52) can be in series by two resistance or a plurality of resistance.
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Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN103837512A (en) * | 2014-02-10 | 2014-06-04 | 中国科学院苏州生物医学工程技术研究所 | High-voltage biasing circuit of avalanche photodiode applied to weak fluorescence measurement |
| CN107515640A (en) * | 2017-09-30 | 2017-12-26 | 上海厦泰生物科技有限公司 | A kind of controlling circuit of voltage regulation suitable for stream type cell analyzer |
| CN112230115A (en) * | 2020-10-13 | 2021-01-15 | 南京大学 | Avalanche test circuit integrating gallium nitride diode and triode and control method thereof |
| CN113220061A (en) * | 2021-05-06 | 2021-08-06 | 中国科学院苏州生物医学工程技术研究所 | Boosting type high-voltage bias circuit applied to avalanche diode APD |
-
2014
- 2014-02-10 CN CN201420060214.3U patent/CN203798736U/en not_active Expired - Lifetime
Cited By (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN103837512A (en) * | 2014-02-10 | 2014-06-04 | 中国科学院苏州生物医学工程技术研究所 | High-voltage biasing circuit of avalanche photodiode applied to weak fluorescence measurement |
| CN103837512B (en) * | 2014-02-10 | 2016-06-29 | 苏州中科医疗器械产业发展有限公司 | It is applied to the HVB high voltage bias circuit of the avalanche diode APD that week fluorescent is measured |
| CN107515640A (en) * | 2017-09-30 | 2017-12-26 | 上海厦泰生物科技有限公司 | A kind of controlling circuit of voltage regulation suitable for stream type cell analyzer |
| CN107515640B (en) * | 2017-09-30 | 2024-01-19 | 上海厦泰生物科技有限公司 | Voltage stabilizing control circuit suitable for flow cytometry analyzer |
| CN112230115A (en) * | 2020-10-13 | 2021-01-15 | 南京大学 | Avalanche test circuit integrating gallium nitride diode and triode and control method thereof |
| CN113220061A (en) * | 2021-05-06 | 2021-08-06 | 中国科学院苏州生物医学工程技术研究所 | Boosting type high-voltage bias circuit applied to avalanche diode APD |
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Effective date of registration: 20151217 Address after: Kolding road high tech Zone of Suzhou City, Jiangsu Province, No. 88 215000 Patentee after: SUZHOU GUOKE MEDICAL TECHNOLOGY DEVELOPMENT Co.,Ltd. Address before: Kolding road high tech Zone of Suzhou City, Jiangsu Province, No. 88 215000 Patentee before: Suzhou Institute of Biomedical Engineering and Technology Chinese Academy of Sciences |
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Effective date of registration: 20160324 Address after: Science and Technology City kolding road high tech Zone of Suzhou City, Jiangsu Province, No. 88 215163 Patentee after: Suzhou Zhongke Medical Device Industry Development Co.,Ltd. Address before: Kolding road high tech Zone of Suzhou City, Jiangsu Province, No. 88 215000 Patentee before: SUZHOU GUOKE MEDICAL TECHNOLOGY DEVELOPMENT Co.,Ltd. |
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Assignee: Zhongsheng (Suzhou) Medical Instrument Co.,Ltd. Assignor: Suzhou Zhongke Medical Device Industry Development Co.,Ltd. Contract record no.: 2017320010008 Denomination of utility model: High-voltage biasing circuit of avalanche photodiode applied to weak fluorescence measurement Granted publication date: 20140827 License type: Exclusive License Record date: 20170307 |
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