CN108106747A - A kind of temperature sensor based on capacitive digital converter - Google Patents
A kind of temperature sensor based on capacitive digital converter Download PDFInfo
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- CN108106747A CN108106747A CN201711365478.4A CN201711365478A CN108106747A CN 108106747 A CN108106747 A CN 108106747A CN 201711365478 A CN201711365478 A CN 201711365478A CN 108106747 A CN108106747 A CN 108106747A
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- G—PHYSICS
- G01—MEASURING; TESTING
- G01K—MEASURING TEMPERATURE; MEASURING QUANTITY OF HEAT; THERMALLY-SENSITIVE ELEMENTS NOT OTHERWISE PROVIDED FOR
- G01K7/00—Measuring temperature based on the use of electric or magnetic elements directly sensitive to heat ; Power supply therefor, e.g. using thermoelectric elements
- G01K7/01—Measuring temperature based on the use of electric or magnetic elements directly sensitive to heat ; Power supply therefor, e.g. using thermoelectric elements using semiconducting elements having PN junctions
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- G—PHYSICS
- G01—MEASURING; TESTING
- G01K—MEASURING TEMPERATURE; MEASURING QUANTITY OF HEAT; THERMALLY-SENSITIVE ELEMENTS NOT OTHERWISE PROVIDED FOR
- G01K2219/00—Thermometers with dedicated analog to digital converters
Abstract
The invention belongs to sensor technical fields, provide a kind of temperature sensor based on capacitive digital converter.The temperature sensor includes：For generating the sensor front end circuit of the first temperature change signal, second temperature variable signal and the 3rd temperature change signal according to temperature variation；It is connected with the sensor front end circuit, for generating the CDC reading circuits of digital code with the 3rd temperature change signal according to first temperature change signal, the second temperature variable signal；And be connected with the CDC reading circuits, for the digital processing circuit exported to the digital code；It can effectively solve the problem of that the excessively complicated practicability of structure of CDC reading circuits in existing temperature sensor is low and larger to temperature detection error by the present invention.
Description
Technical field
The invention belongs to sensor technical field more particularly to a kind of temperature sensors based on capacitive digital converter.
Background technology
With the high speed development of modern electronic technology, each electronic product also gradually tends to portability and miniaturization, is based on
Modern CMOS (Complementary Metal Oxide Semiconductor, complementary metal oxide semiconductor) technique
Temperature sensor has obtained applying more and more widely due to its powerful compatibility；In related art, CDC
(Capacitance-to-Digital-Converter, capacitive digital converter) reading circuit is examined temperature sensor circuit
The temperature variation measured is converted into identifiable digital code, then the digital code can be obtained directly by subsequent digital processing
To the temperature value of external environment, and then realize the direct measurement for environment temperature.
Therefore, the prior art has at least the following problems：Existing CDC reading circuits combine switched capacitor technique and mistake
Sample modulation technology come read temperature signal, it is necessary to by current mirroring circuit, pierce circuit and counting circuit to temperature believe
The count value directly proportional to temperature can just be obtained by number being handled, and entire temperature detection process operation is excessively cumbersome, and CDC reads electricity
Line structure is excessively complicated, and circuit realizes that difficulty is larger, and existing temperature sensor is needed after being calibrated to temperature signal
Temperature value can be just obtained, increases temperature detection error.
The content of the invention
The present invention provides a kind of temperature sensor based on capacitive digital converter, it is intended to solve CDC in the prior art and read
Go out that circuit structure is excessively complicated, be difficult to realize and temperature sensor has the problem of larger detection error is larger.
First aspect present invention provides a kind of temperature sensor based on capacitive digital converter, including：
Become for generating the first temperature change signal, second temperature variable signal and the 3rd temperature according to temperature variation
Change the sensor front end circuit of signal；
It is connected with the sensor front end circuit, for according to first temperature change signal, second temperature change
Change signal with the CDC reading circuits of the 3rd temperature change signal generation digital code；And
It is connected with the CDC reading circuits, for the digital processing circuit exported to the digital code.
Further, the CDC reading circuits include：
Its signal input part is connected with the sensor front end circuit, for eliminating the switching capacity module of offset error；
It is connected with the signal output part of the switching capacity module, for the voltage ratio generated to the switching capacity module
The mutual conductance amplification module that value signal is amplified；And
Input terminal is connected with mutual conductance amplification module, for generating a quantization of digital code according to the voltage Ratio signal
Module.
Further, the switching capacity module includes：
It is connected with the sensor front end circuit, for according to first temperature change signal and the first clock signal
Generate the first capacitance integral unit of the first charging charge；
It is connected with the sensor front end circuit, for according to first temperature change signal and second clock signal
Generate the second capacitance integral unit of the second charging charge；
It is connected with the sensor front end circuit, for according to the second temperature variable signal, the 3rd temperature change
Change signal and the 3rd clock signal adjusts the capacitive feedback list of first charging charge and the second charging charge ratio
Member；And
First MOS switch pipe, the drain electrode of first MOS switch pipe and the first capacitance integral unit, described second
Capacitance integral unit and capacitive feedback unit connection, the grid of first MOS switch pipe meet the 4th clock signal, institute
The source electrode for stating the first MOS switch pipe is the switching capacity module by signal output terminal.
Further, the first capacitance integral unit includes：Second MOS switch pipe, the 3rd MOS switch pipe and first
Trimmer；
The drain electrode of second MOS switch pipe is connected with the sensor front end circuit, the source of second MOS switch pipe
The drain electrode of pole and the 3rd MOS switch pipe is connected with the first end of first trimmer, the 3rd MOS switch pipe
Source electrode be connected to common mode electrical level, the second end of first trimmer is the output terminal of the first capacitance integral unit；
The grid of wherein described second MOS switch pipe and the grid of the 3rd MOS switch pipe connect first clock
Signal.
Further, the second capacitance integral unit includes：4th MOS switch pipe, the 5th MOS switch pipe and second
Trimmer；
The drain electrode of 4th MOS switch pipe is connected with the sensor front end circuit, the source of the 4th MOS switch pipe
The drain electrode of pole, the 5th MOS switch pipe is connected with the first end of second trimmer, the 5th MOS switch pipe
Source electrode is connected to common mode electrical level, and the second end of second trimmer is the output terminal of the second capacitance integral unit；
The grid of 4th MOS switch pipe and the grid of the 5th MOS switch pipe connect the second clock signal.
Further, the capacitive feedback unit includes：6th MOS switch pipe, the 7th MOS switch pipe, the 8th MOS switch
Pipe and the 3rd capacitance；
The drain electrode of 6th MOS switch pipe and the drain electrode of the 7th MOS switch pipe and sensor front end electricity
Road connects, the source electrode of the 6th MOS switch pipe and the source electrode of the 7th MOS switch pipe and the first of the 3rd capacitance
End connection, the source electrode of the 8th MOS switch pipe are connected to common mode electrical level, the second end and the described 8th of the 3rd capacitance
The drain electrode of MOS switch pipe is the output terminal of the capacitive feedback unit；
The grid of 6th MOS switch pipe, the grid of the 7th MOS switch pipe and the 8th MOS switch pipe
Grid connect the 3rd clock signal.
Further, the mutual conductance amplification module includes：4th capacitance and trsanscondutance amplifier；
The first end of 4th capacitance and the reverse input end of the trsanscondutance amplifier and the switching capacity module
Signal output part connection, the noninverting input of the trsanscondutance amplifier is connected to common mode electrical level, the second of the 4th capacitance
End is connected with the output terminal of the trsanscondutance amplifier, and the output terminal of the trsanscondutance amplifier is the output of the mutual conductance amplification module
End.
Further, a quantization modules include comparator and latch；
The noninverting input of the comparator is connected with the mutual conductance amplification module, and the reverse input end of the comparator connects
Common mode electrical level is connected to, the output terminal of the comparator is connected with the data signal input of the latch, the latch
Positive output terminal and the signal output part that inverse output terminal is the CDC reading circuits, the clock signal input of the latch
Terminate the 5th clock signal.
Further, the sensor front end circuit includes：First current offset circuit, the second current offset circuit,
Three current offset circuits and,
For being amplified to the voltage difference between the first current offset circuit and the second current offset circuit
Output operational amplifier；
Believe for exporting the voltage signal in the 3rd current offset circuit and the voltage of the operational amplifier output terminal
Number the sum of adder；
Wherein described operational amplifier output terminal and the output terminal of the adder are the sensor front end circuit
Output terminal.
Further, the first current offset circuit includes：First current source and the first bipolar transistor；
The second current offset circuit includes：Second current source and the second bipolar transistor；
The 3rd current offset circuit includes：3rd current source and the 3rd bipolar transistor；
Wherein described first current source is connected between the emitter of power supply and first bipolar transistor, and described second
Current source is connected between the emitter of power supply and second bipolar transistor, and the 3rd current source is connected to power supply and institute
Between the emitter for stating the 3rd bipolar transistor, the base stage of first bipolar transistor, the collection of first bipolar transistor
Electrode, the base stage of second bipolar transistor, the collector of second bipolar transistor, the 3rd bipolar transistor
The grounded collector of base stage and the 3rd bipolar transistor；
The in-phase input end of the operational amplifier is connected with the emitter of second bipolar transistor, and the computing is put
The reverse input end of big device is connected with the emitter of first bipolar transistor, the first input end of the adder with it is described
The emitter connection of 3rd bipolar transistor, the second input terminal of the adder connect with the output terminal of the operational amplifier
It connects.
The present invention is compared with the advantageous effects acquired by the prior art：In above-mentioned temperature sensor, CDC is read
Circuit is according to the first temperature change signal, second temperature variable signal and the 3rd temperature change of sensor front end circuit output
Signal directly generated with the corresponding digital code of temperature variation, and the digital code can be directly as digital processing circuit
Input, without again to the digital code carry out signal multiplication conversion process, that is, improve also simple for the accuracy of temperature detection
Change the structure of the CDC reading circuits, it is highly practical；It is answered so as to effectively solve CDC reading circuit structures in the prior art
It is miscellaneous and to temperature change detection there are problems that large error.
Description of the drawings
To describe the technical solutions in the embodiments of the present invention more clearly, make required in being described below to embodiment
Attached drawing is briefly described, it should be apparent that, the accompanying drawings in the following description is only some embodiments of the present invention, for
For those skilled in the art, without creative efforts, it can also be obtained according to these attached drawings other attached
Figure.
Fig. 1 is a kind of structural representation of temperature sensor based on capacitive digital converter provided in an embodiment of the present invention
Figure；
Fig. 2 is a kind of structure diagram of CDC reading circuits provided in an embodiment of the present invention；
Fig. 3 is a kind of circuit structure diagram of CDC reading circuits provided in an embodiment of the present invention；
Fig. 4 is a kind of circuit structure diagram of sensor front end circuit provided in an embodiment of the present invention；
Fig. 5 is a kind of signal waveforms of clock signal provided in an embodiment of the present invention.
Specific embodiment
In order to make the purpose , technical scheme and advantage of the present invention be clearer, with reference to the accompanying drawings and embodiments, it is right
The present invention is further elaborated.It should be appreciated that the specific embodiments described herein are merely illustrative of the present invention, and
It is not used in the restriction present invention.
Fig. 1 shows the structural representation of the temperature sensor provided in an embodiment of the present invention based on capacitive digital converter
Figure, for convenience of description, illustrate only with the relevant part of the embodiment of the present invention, details are as follows：
As shown in Figure 1, the temperature sensor 10 includes sensor front end circuit 101, CDC reading circuits 102 and number
Process circuit 103.
Sensor front end circuit 101 detects extraneous temperature variation, and sensor front end circuit 101 is according to the temperature
Variable quantity generates the first temperature change signal, second temperature variable signal and the 3rd temperature change signal；CDC reading circuits
102 are connected with sensor front end circuit 101, and CDC reading circuits 102 change according to first temperature change signal, second temperature
Signal and the 3rd temperature change signal generation digital code, the digital code is corresponding with the temperature variation, that is, passes through the number
Character code can directly reflect the temperature variation of external environment；Digital processing circuit 103 is connected with CDC reading circuits 102, number
Process circuit 103 exports the digital code.
Specifically, digital processing circuit 103 can realize a series of processing such as display, coding, the optimization for the digital code
Afterwards, then the digital code is exported, so as to which user can understand ambient temperature precisely in real time by temperature sensor 10
Variable quantity.
Specifically, Fig. 2 shows the structure diagram of CDC reading circuits 102 provided in an embodiment of the present invention, it is described in detail such as
Under：
As shown in Fig. 2, CDC reading circuits 102 include switching capacity module 1021, mutual conductance amplification module 1022 and one
Quantization modules 1023.
The signal input part of switching capacity module 1021 is connected with sensor front end circuit 101, switching capacity module 1021
Offset error can be eliminated, the wherein offset error refers to that the MOS switch pipe in CDC reading circuits 102 is being closed or is disconnecting
When, the nonlinearity erron charge caused by being injected due to clock feedthrough and charge.
Mutual conductance amplification module 1022 is connected with the signal output part of switching capacity module 1021, when switching capacity module 1021
When generating voltage Ratio signal, mutual conductance amplification module 1022 carries out power amplification to the voltage Ratio signal, to avoid the voltage
Energy loss of the ratio signal in transmission process；The input terminal of one quantization modules 1023 connects with mutual conductance amplification module 1022
It connects, mutual conductance amplification module 1022 generates digital code according to the voltage Ratio signal, high-precision so as to be obtained by the digital code
The temperature change of degree reduces the detection error of the temperature sensor 10.
Specifically, Fig. 3 shows the circuit structure diagram of CDC reading circuits 102 provided in an embodiment of the present invention, it is described in detail such as
Under：
As shown in figure 3, switching capacity module 1021 includes the first capacitance integral unit 301, the second capacitance integral unit
302nd, 303 and first MOS switch pipe Q1 of capacitive feedback unit.
First capacitance integral unit 301 is connected with sensor front end circuit 101, and the first capacitance integral unit 301 is according to
One temperature change signal VBGAnd first clock signal generate the first charging charge；Second capacitance integral unit 302 and sensor
Front-end circuit 101 connects, and the second capacitance integral unit 302 is according to the first temperature change signal VBGAnd second clock signal
Generate the second charging charge；It due to the phase of the first clock signal and the phase of second clock signal and differs, thus generates
The first charging charge and the second charging charge the quantity of electric charge and differ, therefore form in CDC reading circuits 102 corresponding
Nonlinearity erron charge.
Capacitive feedback unit 303 is connected with sensor front end circuit 101, and capacitive feedback unit 303 becomes according to second temperature
Change signal VBE1, the 3rd temperature change signal VBE2And the 3rd clock signal adjust the first charging charge and the second charging charge；
The drain electrode of first MOS switch pipe Q1 and the first capacitance integral unit 301, the second capacitance integral unit 302 and capacitive feedback list
Member 303 connects, wherein the grid of the first MOS switch pipe Q1 connects the 4th clock signal, the source electrode of the first MOS switch pipe Q1 is switch
The output terminal of capacitance module 1021, so as to have by capacitive feedback unit 303 and the first MOS switch pipe Q1 backfeed loops formed
Eliminate to effect the nonlinearity erron charge caused by unbalanced between the first charging charge and the second charging charge.
It is micro- that wherein the first capacitance integral unit 301 includes the second MOS switch pipe Q2, the 3rd MOS switch pipe Q3 and first
Adjust capacitance CTref；The drain electrode of second MOS switch pipe Q2 is connected with sensor front end circuit 101, the source electrode of the second MOS switch pipe Q2
And the 3rd MOS switch pipe Q3 drain electrode and the first trimming capacitor CTrefFirst end connection, the source electrode of the 3rd MOS switch pipe Q3
It is connected to common mode electrical level Vcm, the first trimming capacitor CTrefSecond end be the first capacitance integral unit 301 output terminal.
The wherein grid of the second MOS switch pipe Q2 and the grid of the 3rd MOS switch pipe Q3 connects the first clock signal；When
One clock signal be input to the second MOS switch pipe Q2 grid and the 3rd MOS switch pipe Q3 grid when, the second MOS switch
Pipe Q2 and the 3rd MOS switch pipe Q3 is turned on or turned off according to first clock signal, so as to complete for the first capacitance
First trimming capacitor C in integral unit 301TrefCharge and discharge process.
Wherein the second capacitance integral unit 302 includes：4th MOS switch pipe Q4, the 5th MOS switch pipe Q5 and second are micro-
Adjust capacitance CToff；The drain electrode of 4th MOS switch pipe Q4 is connected with sensor front end circuit 101, the source of the 4th MOS switch pipe Q4
Pole, drain electrode and the second trimming capacitor C of the 5th MOS switch pipe Q5ToffFirst end connection, the source electrode of the 5th MOS switch pipe Q5
It is connected to common mode electrical level Vcm, the second trimming capacitor CToffSecond end be the second capacitance integral unit 302 output terminal；
The grid of 4th MOS switch pipe Q4 and the grid of the 5th MOS switch pipe Q5 connect the second clock signal；Pass through
I.e. controllable 4th MOS switch pipe Q4 and the 5th MOS switch pipe Q5 conductings of the second clock signal or shut-off, so as to fulfill
For the second trimming capacitor C in the second capacitance integral unit 302ToffCharge and discharge process.
Wherein capacitive feedback unit 303 includes the 6th MOS switch pipe Q6, the 7th MOS switch pipe Q7, the 8th MOS switch pipe
Q8 and the 3rd capacitance CT。
The drain electrode of 6th MOS switch pipe Q6 and the drain electrode of the 7th MOS switch pipe Q7 connect with sensor front end circuit 101
It connects, the source electrode of the 6th MOS switch pipe Q6 and the source electrode and the 3rd capacitance C of the 7th MOS switch pipe Q7TFirst end connection, the
The source electrode of eight MOS switch pipe Q8 is connected to common mode electrical level Vcm, the 3rd capacitance CTSecond end and the 8th MOS switch pipe Q8 leakage
The extremely output terminal of capacitive feedback unit 303.
Grid, the grid of the 7th MOS switch pipe Q7 and the grid of the 8th MOS switch pipe Q8 of 6th MOS switch pipe Q6
Connect the 3rd clock signal；Specifically, the 6th MOS switch pipe Q6, the 7th MOS switch pipe Q7 can be realized by the 3rd clock signal
And the 8th MOS switch pipe Q8 conducting or shut-off, and then balance between above-mentioned first charging charge and the second charging charge
Unbalanced error.
Mutual conductance amplification module 1022 includes the 4th capacitance CfAnd trsanscondutance amplifier OTA；4th capacitance CfFirst end and
The reverse input end of trsanscondutance amplifier OTA is connected with the signal output part of switching capacity module 1021, and trsanscondutance amplifier OTA's is same
Common mode electrical level V is connected to input terminalcm, the 4th capacitance CfSecond end be connected with the output terminal of trsanscondutance amplifier OTA, mutual conductance is put
The output terminal of big device OTA is the output terminal of mutual conductance amplification module 1022.
Specifically, the differential voltage of input can be converted to output current by trsanscondutance amplifier OTA, work as trsanscondutance amplifier
There are during voltage differential signal, trsanscondutance amplifier OTA can pass through the voltage differential signal noninverting input and reverse input end of OTA
Conversion amplification is crossed so as to output current signal, to realize the conversion of signal and output.
One quantization modules 1023 includes comparator Cmp and latch DFF；The noninverting input of comparator Cmp with across
It leads amplification module 1022 to connect, the reverse input end of comparator Cmp is connected to common mode electrical level Vcm, the output terminal of comparator Cmp with
The data signal input D connections of latch DFF, the positive output terminal Q and inverse output terminal Q of latch DFF read electricity for CDC
The signal output part on road 102, the clock signal input terminal C of latch DFF connect the 5th clock signal；Wherein the 5th clock signal is used
In driving latch DFF actions.
It should be noted that the first clock signal, second clock signal, the 3rd clock signal, the 4th clock signal and
5th clock signal has clock signal generating circuit generation, and exports to above-mentioned each MOS switch pipe, such as the first MOS switch
Pipe Q1, second MOS switch pipe Q2 etc., so as to which these MOS switch pipes be controlled to turn on or turned off.
It should be noted that the first trimming capacitor CTrefWith the second trimming capacitor CToffCapacitance be adjusted, specific
Circuit application in, the electricity of itself can be changed by the distance between trimmer two-plate, relative position or area
Hold capacity, when capacitance changes, flow through the first trimming capacitor CTrefThe charge of two-plate and flow through the second fine tuning electricity
Hold CToffThe charge of two-plate can also change, so as to which the running current in the CDC reading circuits 102 can also occur therewith
Change.
Specifically, Fig. 4 shows the circuit structure diagram of sensor front end circuit 101 provided in an embodiment of the present invention, it is described in detail
It is as follows：
As shown in figure 4, sensor front end circuit 101 includes the first current offset circuit 1011, the second current offset circuit
1012nd, the 3rd current offset circuit 1013, operational amplifier OP1 and adder Add.
Wherein operational amplifier OP1 is to the electricity between the first current offset circuit 1011 and the second current offset circuit 1012
Pressure difference is amplified output；Specifically, due to the fortune in the first current offset circuit 1011 and the second current offset circuit 1012
Row electric current differs, thus the output voltage in the first current offset circuit 1011 with it is defeated in the second current offset circuit 1012
Go out voltage there are voltage difference, operational amplifier OP1 is amplified output to the voltage difference；Adder Add can export the 3rd electricity
Flow the sum of the voltage signal of bias loop 1013 and the voltage signal of operational amplifier OP1 output terminals；Wherein operational amplifier OP1
The output terminal of output terminal and adder Add are the output terminal of sensor front end circuit 101, for output temperature variable signal.
Wherein, the first current offset circuit 1011 includes：First current source I1And the first bipolar transistor BJT1；Second
Current offset circuit 1012 includes：Second current source I2And the second bipolar transistor BJT2；3rd current offset circuit 1013
Including：3rd current source I3And the 3rd bipolar transistor BJT3.
Specifically, the first current source I1It is connected between the emitter of power Vcc and the first bipolar transistor BJT1, second
Current source I2It is connected between the emitter of power Vcc and the second bipolar transistor BJT2, the 3rd current source I3It is connected to power supply
Between the emitter of Vcc and the 3rd bipolar transistor BJT3, the base stage of the first bipolar transistor BJT1, the first bipolar transistor
The collector of BJT1, the base stage of the second bipolar transistor BJT2, the collector of the second bipolar transistor BJT2, the 3rd bipolar transistor
The grounded collector of the base stage of pipe BJT3 and the 3rd bipolar transistor BJT3.
The in-phase input end of operational amplifier OP1 is connected with the emitter of the second bipolar transistor BJT2, operational amplifier
The reverse input end of OP1 is connected with the emitter of the first bipolar transistor BJT1, the first input end of adder Add and the 3rd pair
The emitter connection of gated transistors BJT3, the second input terminal of adder Add are connected with the output terminal of operational amplifier OP1；Its
The input signal of the first input end of middle adder Add is between the emitter and collector of the 3rd bipolar transistor BJT3
Voltage VBE, as the first current source I1Output current and the second current source I2Output current when differing, then the first bipolar crystalline substance
Electrical potential difference and unequal, the first bipolar transistor between the emitter of the emitter of body pipe BJT1 and the second bipolar transistor BJT2
Electrical potential difference Δ V between the emitter of the emitter of pipe BJT1 and the second bipolar transistor BJT2BEAs described above first
Voltage difference in output voltage and the second current offset circuit 1012 in current offset circuit 1011 between output voltage, although
This electrical potential difference is smaller, but through the enhanced processing of operational amplifier OP1, and then output corresponding temperature change signal；Cause
This temperature sensor 10 is able to detect that minimum temperature variation, improves the accuracy and sensitivity for temperature detection.
In order to better illustrate the present embodiment, illustrate the work of temperature sensor 10 below by a specific example
Principle：
With reference to the circuit structure diagram of the sensor front end circuit 101 shown in Fig. 4, the base stage of each bipolar transistor-
Emitter voltage or the forward voltage of PN junction diode have the transmitting of negative temperature coefficient, i.e. the 3rd bipolar transistor BJT3
Voltage V between pole and collectorBEIt is a negative temperature coefficient voltage.If the first current source I1In running current and the 3rd electricity
Stream source I3In running current between magnitude relationship be：
I1=I3；
Wherein the second current source I2In running current and the first current source I1In running current between magnitude relationship
For：
I2=ρ I1；
Wherein ρ is a constant and presets.
By above two formula it can be seen that, if the first bipolar transistor BJT1 and the second bipolar transistor BJT2 are operated in not phase
Deng current density under, then the difference and absolute temperature is proportional to of the base emitter voltage of the two bipolar transistors, accordingly
, the electrical potential difference Δ V between the emitter of the emitter of the first bipolar transistor BJT1 and the second bipolar transistor BJT2BEWith temperature
It spends directly proportional；If the voltage amplification factor of operational amplifier OP1 is α, the output voltage V of adder AddBGFor：
VBG=VBE+αΔVBE；
By adjusting the voltage amplification factor α of operational amplifier OP1, make the output voltage V of adder AddBGIt keeps constant,
That is the output voltage V of adder AddBGNot variation with temperature and change.
SettingAccording to above-mentioned derivation, VBGIt is temperature-independent voltage value, and Δ VBE
With temperature direct proportionality, then μ and temperature direct proportionality；Temperature sensor 10 can be finally accurately obtained by formula
Output temperature value Dout, wherein the formula is：
Dout=A μ+B
In above formula, A and B are respectively the multiplication factor of temperature sensor 10 and the misalignment factor of temperature sensor 10.
Therefore, the specific example run by more than sensor front end circuit 101, the sensor front end circuit 101
It has used based on band gap reference voltage source circuit, i.e., has been obtained by multiple bipolar transistors and current bias device and temperature
Extraneous temperature variation is converted to temperature change by the temperature change signal having functional relation, the sensor front end circuit 101
Signal realizes accurately measuring for temperature；So as to effectively overcome the prior art real-time can not must obtain it is high-precision
The problem of temperature change signal.
When sensor front end circuit 101 generates the first temperature change signal VBG, second temperature variable signal VBE1And the 3rd
Temperature change signal VBE2, and the temperature signal is transmitted to CDC reading circuits 102, the CDC reading circuits 102 are according to these temperature
Degree variable signal can generate corresponding digital code in real time, be as follows：
If the grid of the first MOS switch pipe Q1 connects the 4th clock signalIt controls each in capacitive feedback unit 303
3rd clock signal of MOS switch pipe on or off can be subdivided into：AndWherein the 6th MOS switch pipe Q6's
Grid connects the 3rd clock signalThe grid of 7th MOS switch pipe Q7 connectsWhen the grid of 8th MOS switch pipe Q8 connects the 3rd
Clock signalWherein figure 5 show AndSignal waveforms；
Further, the second clock of each MOS switch pipe conducting or shut-off in the second capacitance integral unit 302 is controlled
Signal can be subdivided into：AndThe grid of wherein the 4th MOS switch pipe Q4 connects second clock signal5th MOS switch pipe
The grid of Q5 connects second clock signalAnd
Further, the first clock letter of each MOS switch pipe on or off in the first capacitance integral unit 301 is controlled
It number can be subdivided into：AndThe grid of wherein the second MOS switch pipe Q2 connects the first clock signal3rd MOS switch pipe Q3
Connect the first clock signalAnd：
In above formula, Y is the output signal of the positive output terminal Q of latch DFF,For the inverse output terminal of latch DFF
Output signal, wherein YRepresent signal Y and signalBetween logic "and" operation, it is similar,Represent signal
With signalBetween logic "and" operation, the "+" in above formula represents the logic between signal or computing；It should be noted that
The clock signal input terminal C of latch DFF connects the 5th clock signalWhereinDue to the forward direction output of latch DFF
Hold Q and inverse output terminalFor the signal output part of CDC reading circuits 102, then Y andBelieve for the output of CDC reading circuits 102
Number, using the output signal of latch DFF as the control signal of the first MOS switch pipe Q1 and the 3rd MOS switch pipe Q3, form
Closed loop feedback control circuit improves the stability of the CDC reading circuits 102.
Since the drain electrode of the second MOS switch pipe Q2 meets the first temperature change signal VBG, the drain electrode of the 4th MOS switch pipe Q4 connects
First temperature change signal VBG, the drain electrode of the 6th MOS switch pipe Q6 meets second temperature variable signal VBE1, the 7th MOS switch pipe Q7
Drain electrode meet the 3rd temperature change signal VBE2, wherein VBE1For the first bipolar transistor BJT1 in sensor front end circuit 101
Voltage between emitter and collector, VBE2For the emitter of the second bipolar transistor BJT2 in sensor front end circuit 101 with
Voltage between collector, then VBE1With VBE2Between voltage difference delta VBE=VBE2-VBE1, voltage difference delta VBEIt is used for
Three capacitance CTIt charges, in the process, the 4th capacitance CfAs feedback and integrating capacitor so that the first trimming capacitor CTrefWith
Two trimming capacitor CsToffFlow to the 4th capacitance CfCharge tend to 0；If being completed during this in N number of clock signal period,
In the case of there is no clock feedthrough and charge injection, it can be obtained by charge conservation theorem：
NCT(VBE1-VBE2)-NCToffVBG-nCTrefVBG=0
In above formula, the output signal Y that n is latch DFF forward direction output terminals Q in N number of clock signal period is high level
Number,WithRespectively multiplication factor and misalignment factor, DoutFor the output temperature value of temperature sensor 10, list
Position is：Degree Celsius；By above formula as can be seen that passing through adjustingWithChange the big of multiplication factor and misalignment factor
It is small.
If under conditions of the CDC reading circuits 102 are there are clock feedthrough and charge injection, the formula of above-mentioned charge conservation
It will become：
NCT(VBE1-VBE2)-NCToffVBG-nCTrefVBG+NQErr,cf+NQErr,cj=0
In above formula, NQErr,cfAnd NQErr,cjIt is error charge caused by being injected due to clock feedthrough and charge respectively.
The output temperature value D of temperature sensor 10 at this timeoutFor：
In above formula,Represent the offset error as caused by injecting clock feedthrough and charge.When temperature passes
Sensor 10 is when detecting ambient temperature, due to NQErr,cfAnd NQErr,cjIt is all constant, then as caused by injecting clock feedthrough and charge
Offset error is a fixed value, by suitably adjustingRatio the offset error can be offseted.
With reference to above application example, in the temperature sensor provided in the embodiment of the present invention, sensor front end circuit will
Temperature variation is accurately converted into temperature change signal, and CDC reading circuits generate digital code according to the temperature change signal,
The digital code, without others multiplication map function, can improve temperature inspection directly as the input of digital processing circuit
Survey accuracy of detection of the device for temperature；The switching capacity module in CDC reading circuits can directly will be non-linear in circuit simultaneously
Offset error eliminates, without other collimation techniques, by the capacitance for adjusting the first trimmer and the second trimmer
The error charge unbalanced phenomena that MOS switch pipe occurs on or off is avoided, simplifies the circuit knot of CDC reading circuits
Structure, practicability are stronger；Not high to the precision of temperature detection so as to effectively overcome temperature sensor in the prior art, CDC is read
Go out the excessively complicated and low practicability shortcoming of the structure of circuit.
It should be noted that herein, such as first and second etc relational terms are used merely to an entity
Distinguished with another entity, without necessarily requiring or implying between these entities there are any this actual relation or
Person's order.And term " comprising ", "comprising" or any other variant are intended to non-exclusive inclusion, so that bag
Include the product of a series of elements or the element that structure is intrinsic.In the absence of more restrictions, by sentence " bag
Include ... " or " including ... " limit element, it is not excluded that at the process including the element, method, article or end
Also there are other elements in end equipment.In addition, herein, " being more than ", " being less than ", " being more than " etc. are interpreted as not including this
Number；" more than ", " following ", " within " etc. be interpreted as including this number.
The foregoing is merely illustrative of the preferred embodiments of the present invention, is not intended to limit the invention, all essences in the present invention
All any modification, equivalent and improvement made within refreshing and principle etc., should all be included in the protection scope of the present invention.
Claims (10)
1. a kind of temperature sensor based on capacitive digital converter, which is characterized in that including：
Believe for generating the first temperature change signal, second temperature variable signal and the 3rd temperature change according to temperature variation
Number sensor front end circuit；
It is connected with the sensor front end circuit, for according to first temperature change signal, second temperature variation letter
Number with the 3rd temperature change signal generation digital code CDC reading circuits；And
It is connected with the CDC reading circuits, for the digital processing circuit exported to the digital code.
2. temperature sensor according to claim 1, which is characterized in that the CDC reading circuits include：
Its signal input part is connected with the sensor front end circuit, for eliminating the switching capacity module of offset error；
It is connected with the signal output part of the switching capacity module, for the voltage ratio letter generated to the switching capacity module
Number mutual conductance amplification module being amplified；And
Input terminal is connected with mutual conductance amplification module, for generating a quantization mould of digital code according to the voltage Ratio signal
Block.
3. temperature sensor according to claim 1, which is characterized in that the switching capacity module includes：
It is connected with the sensor front end circuit, for according to first temperature change signal and the generation of the first clock signal
First capacitance integral unit of the first charging charge；
It is connected with the sensor front end circuit, for according to first temperature change signal and second clock signal generation
Second capacitance integral unit of the second charging charge；
It is connected with the sensor front end circuit, for according to the second temperature variable signal, the 3rd temperature change letter
Number and the 3rd clock signal adjust the capacitive feedback unit of first charging charge and the second charging charge ratio；With
And
First MOS switch pipe, the drain electrode of first MOS switch pipe and the first capacitance integral unit, second capacitance
Integral unit and capacitive feedback unit connection, the grid of first MOS switch pipe connect the 4th clock signal, and described the
The source electrode of one MOS switch pipe is the switching capacity module by signal output terminal.
4. temperature sensor according to claim 3, which is characterized in that the first capacitance integral unit includes：Second
MOS switch pipe, the 3rd MOS switch pipe and the first trimmer；
The drain electrode of second MOS switch pipe is connected with the sensor front end circuit, the source electrode of second MOS switch pipe with
And the drain electrode of the 3rd MOS switch pipe is connected with the first end of first trimmer, the source of the 3rd MOS switch pipe
Pole is connected to common mode electrical level, and the second end of first trimmer is the output terminal of the first capacitance integral unit；
The grid of wherein described second MOS switch pipe and the grid of the 3rd MOS switch pipe connect first clock signal.
5. temperature sensor according to claim 3, which is characterized in that the second capacitance integral unit includes：4th
MOS switch pipe, the 5th MOS switch pipe and the second trimmer；
The drain electrode of 4th MOS switch pipe is connected with the sensor front end circuit, the source electrode of the 4th MOS switch pipe,
The drain electrode of 5th MOS switch pipe is connected with the first end of second trimmer, the source electrode of the 5th MOS switch pipe
Common mode electrical level is connected to, the second end of second trimmer is the output terminal of the second capacitance integral unit；
The grid of 4th MOS switch pipe and the grid of the 5th MOS switch pipe connect the second clock signal.
6. temperature sensor according to claim 3, which is characterized in that the capacitive feedback unit includes：6th MOS is opened
Guan Guan, the 7th MOS switch pipe, the 8th MOS switch pipe and the 3rd capacitance；
The drain electrode of 6th MOS switch pipe and the drain electrode of the 7th MOS switch pipe connect with the sensor front end circuit
It connects, the source electrode of the 6th MOS switch pipe and the source electrode of the 7th MOS switch pipe and the first end of the 3rd capacitance connect
It connects, the source electrode of the 8th MOS switch pipe is connected to common mode electrical level, the second end of the 3rd capacitance and the 8th MOS
The drain electrode of switching tube is the output terminal of the capacitive feedback unit；
Grid, the grid of the 7th MOS switch pipe and the grid of the 8th MOS switch pipe of 6th MOS switch pipe
Pole connects the 3rd clock signal.
7. temperature sensor according to claim 2, which is characterized in that the mutual conductance amplification module includes：4th capacitance
And trsanscondutance amplifier；
The first end of 4th capacitance and the reverse input end of the trsanscondutance amplifier and the letter of the switching capacity module
The connection of number output terminal, the noninverting input of the trsanscondutance amplifier are connected to common mode electrical level, the second end of the 4th capacitance with
The output terminal connection of the trsanscondutance amplifier, the output terminal of the trsanscondutance amplifier are the output terminal of the mutual conductance amplification module.
8. temperature sensor according to claim 2, which is characterized in that a quantization modules include comparator and
Latch；
The noninverting input of the comparator is connected with the mutual conductance amplification module, and the reverse input end of the comparator is connected to
Common mode electrical level, the output terminal of the comparator are connected with the data signal input of the latch, the forward direction of the latch
Output terminal and the signal output part that inverse output terminal is the CDC reading circuits, the clock signal input terminal of the latch connect
5th clock signal.
9. according to claim 1-8 any one of them temperature sensors, which is characterized in that the sensor front end circuit bag
It includes：First current offset circuit, the second current offset circuit, the 3rd current offset circuit and,
For being amplified output to the voltage difference between the first current offset circuit and the second current offset circuit
Operational amplifier；
For export the voltage signal of the voltage signal in the 3rd current offset circuit and the operational amplifier output terminal it
The adder of sum；
Wherein described operational amplifier output terminal and the output that the output terminal of the adder is the sensor front end circuit
End.
10. temperature sensor according to claim 9, which is characterized in that the first current offset circuit includes：First
Current source and the first bipolar transistor；
The second current offset circuit includes：Second current source and the second bipolar transistor；
The 3rd current offset circuit includes：3rd current source and the 3rd bipolar transistor；
Wherein described first current source is connected between the emitter of power supply and first bipolar transistor, second electric current
Source is connected between the emitter of power supply and second bipolar transistor, and the 3rd current source is connected to power supply and described the
Between the emitter of three bipolar transistors, the base stage of first bipolar transistor, first bipolar transistor collector,
The base stage of second bipolar transistor, the collector of second bipolar transistor, the base stage of the 3rd bipolar transistor
And the grounded collector of the 3rd bipolar transistor；
The in-phase input end of the operational amplifier is connected with the emitter of second bipolar transistor, the operational amplifier
Reverse input end be connected with the emitter of first bipolar transistor, the first input end of the adder and the described 3rd
The emitter connection of bipolar transistor, the second input terminal of the adder are connected with the output terminal of the operational amplifier.
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| WO2022116400A1 (en) * | 2020-12-03 | 2022-06-09 | 南京邮电大学 | Low-power-consumption low-voltage digital temperature sensor |
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