CN109060162A - temperature sensor - Google Patents
temperature sensor Download PDFInfo
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- CN109060162A CN109060162A CN201810712435.7A CN201810712435A CN109060162A CN 109060162 A CN109060162 A CN 109060162A CN 201810712435 A CN201810712435 A CN 201810712435A CN 109060162 A CN109060162 A CN 109060162A
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- G—PHYSICS
- G01—MEASURING; TESTING
- G01K—MEASURING TEMPERATURE; MEASURING QUANTITY OF HEAT; THERMALLY-SENSITIVE ELEMENTS NOT OTHERWISE PROVIDED FOR
- G01K7/00—Measuring temperature based on the use of electric or magnetic elements directly sensitive to heat ; Power supply therefor, e.g. using thermoelectric elements
- G01K7/32—Measuring temperature based on the use of electric or magnetic elements directly sensitive to heat ; Power supply therefor, e.g. using thermoelectric elements using change of resonant frequency of a crystal
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Abstract
The present invention provides a kind of temperature sensor, comprising: the first temperature sensing circuit temperature sensing circuit is configured to generate sensing electric current relevant to temperature；Second temperature sensing circuit reference circuit is configured to generate temperature independent reference current；First-class control oscillator is configured to the sensing electric current being converted to sensing frequency；Second controlled oscillator is configured to the reference current being converted to reference frequency；And processor, it is configured to normalize the sensing frequency using the reference frequency, generates normalized sensing frequency.Under same process corner sensing frequency influenced with reference frequency by technique be as, output can be made to receive the influence of process deviation sensing frequency normalization using reference frequency and greatly reduce, improve process deviation.
Description
Technical field
The present invention relates to temperature sensor, the temperature sensor that can be integrated in particular to one kind on chip.
Background technique
CMOS temperature transmitter is a kind of sensor that can integrate portion in the chip, and portion is indispensable in the chip
Analog module, for the temperature in chip, dynamically the tools such as management, real-time monitoring temperature play a very important role.
Current built-in temperature sensor mainly includes voltage temperature sensor, delay line temperature sensor and frequency temperature
Sensor.
Voltage temperature sensor obtains pass corresponding with temperature using the voltage directly proportional to temperature as monitoring physical quantity
System, voltage temperature sensor also needs to use analog-digital converter (ADC), although accuracy is high, circuit is complicated, and power consumption is big.
The characteristics of delay line temperature sensor is varied with temperature using the delay of phase inverter, the physical quantity by delay as monitoring temperature,
Delay line temperature sensor circuit is simple, can be realized with full-digital circuit, the disadvantage is that obtain higher delay and temperature
The linearity, it is necessary to which many delay unit series connection can generally reach several hundred a phase inverters, this can seriously increase chip area.
Frequency temperature sensor obtains the voltage or current varied with temperature, usually electric current first, is passed through using this electric current
An oscillator is crossed, the frequency varied with temperature is generated, using frequency as the monitoring physical quantity of temperature.Frequency temperature sensor electricity
Line structure is simple, and without labyrinths such as ADC, it is small to account for chip area, power consumption can also accomplish it is very low, as long as the electric current inputted
It is small.
At present using it is more be frequency temperature sensor, size is directly influenced by input current.Since system is missed
The reasons such as difference, resistance error, process deviation can generally reach 20% or more, it is therefore desirable to its process deviation is improved and
Compensation.
Summary of the invention
The technical problem to be solved by the present invention is to how the process deviation of frequency temperature sensor be improved and be mended
It repays.
In order to solve the above technical problem, the present invention provides a kind of temperature sensors, comprising:
Temperature sensing circuit is configured to generate sensing electric current relevant to temperature；
Reference circuit is configured to generate temperature independent reference current；
First-class control oscillator is configured to the sensing electric current being converted to sensing frequency；
Second controlled oscillator is configured to the reference current being converted to reference frequency；And
Processor is configured to normalize the sensing frequency using the reference frequency, generates normalized sensing frequency
Rate.
In one embodiment of this invention, the temperature sensing circuit includes:
The emitter of the first transistor, the first transistor connects reference voltage；
The emitter of second transistor, the second transistor connects the reference voltage；
First biasing circuit is configured to bias the base stage of the first transistor and second transistor so that described
One transistor and second transistor operate in sub-threshold region, and are configured to generate between first voltage and second voltage
The proportional electric current of difference, wherein the first voltage is the base stage of the first transistor to the voltage of emitter, described
Two voltages are the base stages of the second transistor to the voltage of emitter；And
The first resistor being connected between the collector of the second transistor and first biasing circuit.
In one embodiment of this invention, first biasing circuit includes:
Amplifier, the first input end of the amplifier connect the resistance, and the second input terminal connects the first crystal
The collector of pipe；
Third transistor is connected between power supply and the collector of the first transistor；
4th transistor is connected between power supply and the resistance；And
Wherein the third transistor connects the output end of the amplifier with the grid of the 4th transistor.
In one embodiment of this invention, the reference circuit includes:
The emitter of 5th transistor, the 5th transistor connects reference voltage；
The emitter of 6th transistor, the 6th transistor connects the reference voltage；
Second biasing circuit is configured to bias the base stage of the 5th transistor and the 6th transistor so that described
Five transistors and the 6th transistor operate in sub-threshold region, and are configured to generate between tertiary voltage and the 4th voltage
The proportional electric current of difference, wherein the tertiary voltage is the base stage of the 5th transistor to the voltage of emitter, described
Two voltages are the base stages of the 6th transistor to the voltage of emitter；And
The second resistance being connected between the collector and second biasing circuit of the 6th transistor；
The 3rd resistor being connected between the collector and emitter of the 5th transistor；And
The 4th resistance being connected between the emitter and second biasing circuit of the 6th transistor.
In one embodiment of this invention, second biasing circuit includes:
Amplifier, the first input end of the amplifier connect the second resistance, the second input terminal connection the described 5th
The collector of transistor；
7th transistor is connected between power supply and the collector of the 5th transistor；
8th transistor is connected between power supply and the second resistance；And
Wherein the grid of the 7th transistor and the 8th transistor connects the output end of the amplifier.
In one embodiment of this invention, the first resistor to the 4th resistance is identical resistance.
In one embodiment of this invention, the first-class control oscillator and second controlled oscillator are having the same
Process corner.
In one embodiment of this invention, the first-class control oscillator is identical with second controlled oscillator.
In one embodiment of this invention, the first-class control oscillator and/or the second controlled oscillator are relaxation oscillation
Device, including the first oscillation sub-circuit, the second oscillation sub-circuit and latch, in which:
The first oscillation sub-circuit and the second oscillation sub-circuit respectively include current source, switching device, capacitor
And comparator,
The first oscillation sub-circuit provides the first output signal to the latch,
The second oscillation sub-circuit provides the second output signal to the latch,
The latch generates oscillation output signal according to first output signal and second output signal,
Derailing switch of the oscillation output signal feedback to the first oscillation sub-circuit and the second oscillation sub-circuit
Part.
In one embodiment of this invention, the oscillation output signal includes the clock signal of one group of reverse phase each other.
In one embodiment of this invention, the first oscillation sub-circuit and the second oscillation sub-circuit share an electricity
Container.
In one embodiment of this invention, the comparator of the first oscillation sub-circuit is by the voltage and ginseng of the capacitor
Voltage limit is admitted to be compared,
The voltage of the capacitor is compared by the comparator of the second oscillation sub-circuit with reference lower limit voltage.
In one embodiment of this invention, when the voltage of the capacitor drops to the reference lower limit voltage or less,
It being charged by the first oscillation sub-circuit to the capacitor, the switching device of the second oscillation sub-circuit disconnects,
When the voltage of the capacitor rises to the reference upper level voltage or more, pass through the second oscillation sub-circuit
It discharges the capacitor, the switching device of the first oscillation sub-circuit disconnects.
In one embodiment of this invention, the first oscillation sub-circuit and the second oscillation sub-circuit share an electricity
Stream source,
When charging by capacitor of the first oscillation sub-circuit to the first oscillation sub-circuit, pass through institute
The second oscillation sub-circuit is stated to discharge to the capacitor of the second oscillation sub-circuit,
When discharging by capacitor of the first oscillation sub-circuit to the first oscillation sub-circuit, pass through institute
The second oscillation sub-circuit is stated to charge to the capacitor of the second oscillation sub-circuit.
In one embodiment of this invention, the processor be configured to by the sensing frequency divided by the reference frequency with
Realize normalization.
The present invention also provides a kind of storage chips, including temperature sensor as described above.
Compared with prior art, the invention has the following advantages that the present invention provides a kind of temperature sensor, including temperature
Sensing circuit, reference circuit, controlled oscillator and processor.Temperature sensing circuit and reference circuit generate respectively sensing electric current and
Reference current, controlled oscillator will sense electric current and reference current is converted to sensing frequency and reference frequency respectively.Same
Under process corner sensing frequency influenced with reference frequency by technique be as, using reference frequency by sensing frequency normalization can
So that the influence that output receives process deviation greatly reduces, process deviation is improved.
Detailed description of the invention
Fig. 1 is the block diagram of the temperature sensor of one embodiment of the invention.
Fig. 2 is the circuit diagram of the temperature sensing circuit of one embodiment of the invention.
Fig. 3 is the circuit diagram of the reference circuit of one embodiment of the invention.
Fig. 4 is the circuit diagram of the controlled oscillator of one embodiment of the invention.
Fig. 5 is the figure of the ideal charge and discharge process of the controlled oscillator of one embodiment of the invention.
Fig. 6 is the figure of the desired output signal of the controlled oscillator of one embodiment of the invention.
Fig. 7 A-7B is the emulation schematic diagram at different process angle.
Fig. 8 is the emulation schematic diagram at the different process angle of one embodiment of the invention.
Specific embodiment
For the above objects, features and advantages of the present invention can be clearer and more comprehensible, below in conjunction with attached drawing to tool of the invention
Body embodiment elaborates.
In the following description, numerous specific details are set forth in order to facilitate a full understanding of the present invention, but the present invention can be with
It is different from other way described herein using other and implements, therefore the present invention is by the limit of following public specific embodiment
System.
As shown in the application and claims, unless context clearly prompts exceptional situation, " one ", "one", " one
The words such as kind " and/or "the" not refer in particular to odd number, may also comprise plural number.It is, in general, that term " includes " only prompts to wrap with "comprising"
Include clearly identify the step of and element, and these steps and element do not constitute one it is exclusive enumerate, method or apparatus
The step of may also including other or element.
It should be understood that can refer to straight when unit or module are described as " connecting " other units, module or block
It connects in succession, is perhaps communicated with other units, module or block or there may be intermediate unit, module or blocks, unless context
Clearly indicate other way.Term as used herein "and/or" may include one or more correlations list any of project with
All combinations.
Fig. 1 shows the block diagram of the temperature sensor 100 of one embodiment of the invention.As shown in Figure 1, temperature sensor
100 include temperature sensing circuit 101, reference circuit 102, first-class control oscillator 103, the second controlled oscillator 104 and processing
Device 105.
Temperature sensing circuit 101 is configured to generate sensing electric current relevant to temperature, and the sensing electric current of generation is sent
To first-class control oscillator 103.Reference circuit 102 is configured to generate temperature independent reference current, and by the reference of generation
Electric current is sent to the second controlled oscillator 104.First-class control oscillator 103 is configured to received sensing electric current being converted to sensing
Frequency, and the sensing frequency of generation is sent to processor 105.Second controlled oscillator 104 is configured to convert reference current
For reference frequency, and the reference frequency of generation is sent to processor 105.Processor 105 is configured so that reference frequency will be felt
Measured frequency normalization, generates normalized sensing frequency.
In an embodiment of the present invention, electric current is sensed in temperature sensing circuit 101 and the relationship of temperature can be positive correlation
Or it is negatively correlated.Preferably, it is directly proportional for electric current being sensed in temperature sensing circuit 101 to the relationship of temperature.
In an embodiment of the present invention, first-class control oscillator and the second controlled oscillator can have identical technique
Angle.Process corner refers to semiconductor devices in the fabrication process, due to the position difference on same wafer, or different batches
Between secondary wafer, the parameter of field-effect tube can difference, be generally divided into that typical process (typical, tt), be exceedingly fast technique
(fast NMOS fast PMOS, ff), speed technique (fast NMOS slow PMOS, fs), slow fast technique (slow NMOS
Fast PMOS, sf) and extremely slow technique (slow NMOS slow PMOS, ss).Sensing frequency and ginseng under same process corner
Examining frequency is influenced to be the same by technique.Furthermore, first-class control oscillator and the second controlled oscillator can be phase
Same controlled oscillator.
In an embodiment of the present invention, processor 105 is normalized sensing frequency using reference frequency, by controlled oscillator
By technique influenced to cancel out each other, output can be made to receive the influence of process deviation and greatly reduced, process deviation is improved.
Temperature sensing circuit, reference circuit, first-class control oscillator, the second controlled oscillator and processor some details
It will be explained below.It is appreciated that those skilled in the art can implement the present invention in the case where no following details.
Temperature sensing circuit
The temperature on measurement chip can be used to based on bipolar temperature-sensing element.Based on bipolar temperature sensing member
Part may include two bipolar junction transistors (BJT).The base-emitter that the variation of temperature will lead to two BJT generates voltage
Difference.If connecting load on the circuit of two BJT, electric current can be generated in load, it can by the electric current in detection load
With the temperature in detection chip.
Fig. 2 shows the electrical block diagrams of the temperature sensing circuit 200 of one embodiment of the invention.As shown in Fig. 2,
Temperature sensing circuit 200 includes the first transistor Q1, second transistor Q2, the first biasing circuit BC1 and first resistor R1.
The first transistor Q1 and second transistor Q2 is bipolar junction transistor (BJT).The first transistor Q1 and second
The emitter of transistor Q2 connects reference voltage GND.The first transistor Q1 includes a transistor, and second transistor Q2 includes more
The transistor of a parallel connection.For example, second transistor Q2 includes 8 transistors in parallel.
First biasing circuit BC1 biases the base stage of the first transistor Q1 and second transistor Q2 so that the first transistor Q1
It is operated in sub-threshold region with second transistor Q2.Sub-threshold region refers to bias voltage VbiasIn the first transistor Q1 and second
Below the threshold voltage of transistor Q2.First biasing circuit BC1 biases the base stage of the first transistor Q1 and second transistor Q2, the
The base stage of one transistor Q1 generates first voltage to emitter, and the base stage of second transistor Q2 generates second voltage to emitter.
First biasing circuit BC1 generates proportional to the difference between first voltage and second voltage according to first voltage and second voltage
Electric current.
First biasing circuit BC1 includes amplifier Amp1, third transistor M3 and the 4th transistor M4.Amplifier Amp1's
First input end connects first resistor R1, and the second input terminal connects the collector of the first transistor Q1, and it is brilliant that output end connects third
The grid of body pipe M3 and the 4th transistor M4.For example, the anode of amplifier Amp1 connects first resistor R1, negative terminal connection first is brilliant
The collector of body pipe Q1.Third transistor M3 is connected between power vd D and the collector of the first transistor Q1, for being first
Transistor Q1 provides stable quiescent point.4th transistor M4 is connected between power vd D and first resistor R1, for for
Second transistor Q2 provides stable quiescent point.The grid of third transistor M3 and the 4th transistor M4 are connected to biased electrical
Press Vbias.Bias voltage VbiasSo that third transistor M3 and the 4th transistor M4 are operated in sub-threshold region.What sub-threshold region referred to
It is bias voltage VbiasBelow the threshold voltage of third transistor M3 and the 4th transistor M4.
First resistor R1 is connected between the collector of second transistor Q2 and the first biasing circuit BC1.In first voltage
Under the action of the voltage difference of second voltage, the sensing electric current proportional to voltage difference for passing through first resistor R1 is generated.Due to
It is proportional to voltage difference to sense electric current, voltage difference and temperature proportional, therefore it is also proportional to temperature to sense electric current.The sense of generation
It surveys electric current and is sent to controlled oscillator, be converted to sensing frequency for electric current will to be sensed.
The circuit theory of temperature sensing circuit 200 is illustrated below.Amplifier Amp1 makes the voltage phase of A, B two o'clock
It is the bipolar junction transistor BJT, the V of the first transistor Q1 and second transistor Q2 of multiple parallel connections Deng, second transistor Q2BEIt
Between have a voltage difference delta VBE, this voltage difference delta VBEIt falls on first resistor R1, generates the sensing electricity by first resistor R1
Stream.Sensing electric current can have positive temperature coefficient (Current Proportional to Absolute Temperature,
Iptat), it is possible to have negative temperature coefficient (Current Complementary to Absolute Temperature,
Ictat).To simplify the explanation, it is hereafter all described with the sensing electric current Iptat with positive temperature coefficient.
From foregoing circuit principle it is found that the calculation formula of sensing electric current Iptat is
Wherein, Δ VBEFor the V of the first transistor Q1 and second transistor Q2BEVoltage difference, R1 be first resistor resistance
Value.
Reference circuit
Fig. 3 shows the electrical block diagram of the reference circuit 300 of one embodiment of the invention.As shown in figure 3, with reference to
Circuit 300 include the 5th transistor Q5, the 6th transistor Q6, the second biasing circuit BC2, second resistance R2,3rd resistor R3 and
4th resistance R4.
5th transistor Q5 and the 6th transistor Q6 is bipolar junction transistor (BJT).5th transistor Q5 and the 6th
The emitter of transistor Q6 connects reference voltage GND.5th transistor Q5 includes a transistor, and the 6th transistor Q6 includes more
The transistor of a parallel connection.For example, the 6th transistor Q6 includes 8 transistors in parallel.
Second biasing circuit BC2 biases the base stage of the 5th transistor Q5 and the 6th transistor Q6 so that the 5th transistor Q5
It is operated in sub-threshold region with the 6th transistor Q6.Sub-threshold region refers to bias voltage VbiasIn the 5th transistor Q5 and the 6th
Below transistor Q6 threshold voltage.The base stage of the 5th transistor Q5 and the 6th transistor Q6 of second biasing circuit BC2 biasing, the 5th
The base stage of transistor Q5 generates tertiary voltage to emitter, and the base stage of the 6th transistor Q6 generates the 4th voltage to emitter.The
Two biasing circuit BC2 generate proportional to the difference between tertiary voltage and the 4th voltage according to tertiary voltage and the 4th voltage
Electric current.
Second biasing circuit BC2 includes amplifier Amp2, the 7th transistor M7 and the 8th transistor M8.Amplifier Amp2's
First input end connects second resistance R2, and the second input terminal connects the collector of the 5th transistor Q5, and output end connection the 7th is brilliant
The grid of body pipe M7 and the 8th transistor M8.For example, the anode of amplifier Amp2 connects second resistance R2, amplifier Amp2's is negative
The collector of the 5th transistor Q5 of end connection.7th transistor M7 be connected to power vd D and the 5th transistor Q5 collector it
Between, for providing stable quiescent point for the 5th transistor Q5.8th transistor M8 is connected to power vd D and second resistance
Between R2, for providing stable quiescent point for the 6th transistor Q6.The grid of 7th transistor M7 and the 8th transistor M8
Pole is connected to bias voltage Vbias.Bias voltage VbiasSo that the 7th transistor M7 and the 8th transistor M8 are grasped in sub-threshold region
Make.Sub-threshold region refers to bias voltage VbiasBelow the threshold voltage of the 7th transistor M7 and the 8th transistor M8.
Second resistance R2 is connected between the collector of the 6th transistor Q6 and the second biasing circuit BC2.3rd resistor R3
It is connected between the collector and emitter of the 5th transistor Q5.4th resistance R4 be connected to the 6th transistor Q6 emitter and
Between second biasing circuit BC2.It is appreciated that first resistor R1 to the 4th resistance R4 is identical resistance.Identical resistance refers to
Be first resistor R1 to the 4th resistance R4 electric property having the same, such as having the same wide and long and square resistance
Value is identical with the deviation of technique with temperature.
The circuit theory of reference circuit 300 is illustrated below.Amplifier Amp2 keeps the voltage of C, D two o'clock equal, the
Electric current on two resistance R2 is directly proportional to temperature,
Wherein, Δ VBEIt is for the V of the 5th transistor Q5 and the 6th transistor Q6BEVoltage difference, R2 be second resistance resistance
Value.
Voltage on 4th resistance R4 is VBE, the voltage on 3rd resistor R3 is also VBE, R3 is equal with R4.BEIt is to have to bear
The voltage of temperature coefficient, thenWith negative temperature coefficient.The calculation formula of Iref are as follows:
Wherein, Δ VBEIt is for the V of the 5th transistor Q5 and the 6th transistor Q6BEVoltage difference, VBEIt is the 5th transistor Q5
Base stage is to the voltage of emitter, and R2 is the resistance value of second resistance, and R4 is the resistance value of the 4th resistance.Appropriate adjustment second resistance R2 and
The resistance value of 4th resistance R4 can obtain the electric current Iref of zero-temperature coefficient, that is, reference current.
Controlled oscillator
First and second controlled oscillators convert frequency for current signal for receiving electric current.First and second streams
Control oscillator can be relaxor.Controlled oscillator is described by taking relaxor as an example below.
Fig. 4 shows the circuit diagram of the controlled oscillator 400 of one embodiment of the invention.
As shown in figure 4, the controlled oscillator 400 includes current source 401a, current source 401b, transistor MN1, MP1, capacitor
Device Cap, comparator Comp1, Comp2 and latch 402.
Current source 401a and current source 401b can be identical current source.For example, current source 401a and current source 401b
It can be the sensing electric current that the temperature sensing circuit 200 of Fig. 2 generates.Current source 401a and current source 401b can be the ginseng of Fig. 3
Examine the reference current of the generation of circuit 300.Specifically, transistor MN1 is N-type transistor, transistor MP1 is P-type transistor, is come
As switch element.The drain electrode of transistor MP1 is connected to the drain electrode of transistor MN1, and the source electrode of transistor MP1 is via current source
401a is connected to bulk potential VDD.The source electrode of transistor MN1 is grounded via current source 401b.The drain electrode of transistor MP1 is also connected with
To comparator Comp1 input terminal and comparator Comp2 another input terminal and capacitor Cap one end.Capacitor Cap
The other end ground connection.Another input terminal of comparator Comp1 is connected to reference upper level voltage VH.The output of comparator Comp1
End is connected to the end R of latch 402.An input terminal of comparator Comp2 is connected to reference lower limit voltage VL.Comparator
The output end of Comp2 is connected to the end S of latch 402.When the end Q of latch 402 is provided to the grid of transistor MP1 and MN1
Clock signal CLK, CLKb are the inversion signals of clock signal clk.
Transistor MP1, capacitor Cap, comparator Comp1 and current source 401a constitute the first oscillation sub-circuit, crystal
Pipe MN1, capacitor Cap, comparator Comp2 and current source 401b constitute the second oscillation sub-circuit.Below to present embodiment
The circuit theory of relaxor be illustrated.
When connecting circuit, when the level that the level of CLK is 0, CLKb is 1, transistor MP1 conducting, transistor MN1 ends,
By current source 401a with electric current IcIt charges to capacitor Cap.When the voltage of capacitor Cap is greater than reference lower limit voltage VLAnd
Less than reference upper level voltage VHWhen, the output of comparator Comp1, Comp2 are all low level.Until the voltage of capacitor cap is super
Cross reference upper level voltage VHWhen, comparator Comp1 exports high level, and comparator Comp2 exports low level, reaches latch 402
The level that the CLK exported later becomes 1, CLKb becomes 0.
When the level that the level of CLK is 1, CLKb is 0, transistor MP1 cut-off, transistor MN1 conducting, capacitor Cap
Via transistor MN1 and current source 401b with electric current IdIt discharges, until the voltage of capacitor cap is lower than reference lower limit electricity
Press VLWhen, comparator Comp1 exports low level, and comparator Comp2 exports high level, and the level that CLK becomes 0, CLKb becomes 1.
A cycle of oscillation is formed as a result, is recycled with this, to export the square-wave signal of periodic transformation.The relaxation oscillation
The charging time of device is t1=C* (VH-VL)/Ic, discharge time t2=C* (VH-VL)/Id, output frequency is F=1/ (t1+t2).
Therefore, to the duty ratio of guarantee 50%, it is only necessary to make the output electric current I of current source 401acThe output electricity of=current source 401b
Flow Id?.
Fig. 5 shows the ideal charge and discharge process of the relaxor of present embodiment, and Fig. 6 shows the relaxation of present embodiment
The desired output signal of oscillator.Horizontal axis indicates the time in Fig. 5, and the longitudinal axis indicates the voltage of capacitor Cap.Horizontal axis indicates in Fig. 6
Time, the longitudinal axis indicate the output signal (CLK) of latch 402.
As shown in figure 5, in the ideal case, the voltage of capacitor Cap is in reference upper level voltage VHWith reference lower limit voltage VL
Between change in oscillation, thus to obtain clock signal clk shown in fig. 6.The clock signal clk can be used as system clock with it is synchronous when
Clock etc..
Processor
Processor receives the sensing frequency and reference frequency of controlled oscillator output, is returned sensing frequency using reference frequency
One changes, and generates normalized sensing frequency.Temperature sensing circuit and reference circuit generate sensing electric current and reference current, stream respectively
Control oscillator will sense electric current and reference current is converted to sensing frequency and reference frequency respectively.It is sensed under same process corner
Frequency influenced with reference frequency by technique be as, using reference frequency by sensing frequency normalization can make output receive
The influence of process deviation greatly reduces, and improves process deviation.Processor can be digital signal processor (DSP).It retouches below
State the treatment process of processor.
With reference to the controlled oscillator of Fig. 4, the calculation formula of sensing frequency Fptat and reference frequency Fref are as follows:
Wherein, Iptat is sensing electric current, and Iref is reference current, and C is the capacitance of capacitor Cap, and VH is reference upper level electricity
Pressure, VL is reference lower limit voltage.
After processor receives sensing frequency Fptat and reference frequency Fref, frequency will be sensed using reference frequency Fref
Rate Fptat normalization.Normalized calculation formula is as follows:
Wherein, Fptat is sensing frequency, and Fref is reference frequency, and Iptat is sensing electric current, and Iref is reference current, Δ
VBEIt is the V of the first transistor Q1 and second transistor Q2BEVoltage difference and the 5th transistor Q5 and the 6th transistor Q6
VBEVoltage difference, the V of the first transistor Q1 and second transistor Q2BEVoltage difference and the 5th transistor Q5 and the 6th transistor
The V of Q6BEVoltage difference can be set to identical, former capital Δ VBEIt indicates, VBEIt is the first transistor Q1 and the 5th transistor Q5
To the voltage of emitter, the voltage of the first transistor Q1 and the 5th transistor Q5 base stage to emitter may be set to be base stage
It is identical, former capital VBEIt indicates.
If using identical first resistor R1, second resistance R2, third electricity in temperature sensing circuit and reference circuit
R3 and the 4th resistance R4 is hindered, first resistor R1 to the 4th resistance R4 is identical with the deviation of technique with temperature, then Δ VBEBe
Number is all constant, can eliminate the deviation of resistance, so that entire output and Δ VBEIt is related, it is the letter directly proportional to temperature
Number.
Fig. 7 A-7B is the emulation schematic diagram at different process angle.Wherein, Fig. 7 A is the emulation that electric current is sensed under different process angle
As a result, Fig. 7 B is the simulation result of sensing frequency under different process angle.Only as an example, having chosen tri- techniques of tt, ss and ff
Angle emulates.It can be seen that sensing electric current from Fig. 7 A-7B and sensing frequency be very big with the deviation of technique.Ff process corner relative to
The deviation of tt process corner can achieve 26%, ss process corner and can achieve 14% relative to the deviation of tt process corner.
Fig. 8 is the emulation schematic diagram at the different process angle of one embodiment of the invention.Using Fptat/Fref as output, obtain
To a curve relevant to temperature, temperature is detected using the relationship of Fptat/Fref and temperature.As shown in figure 8, tt
The curve of process corner and ss process corner essentially coincides, and error rate is reduced to ± 2%, much smaller than single frequency output error,
Process deviation is improved.
The preferred embodiment of the present invention has been described above in detail.It should be appreciated that the present invention is not departing from its broad sense essence
Various embodiments and deformation can be used in the case where mind and range.Those skilled in the art are not necessarily to creative work
It according to the present invention can conceive and make many modifications and variations.Therefore, all those skilled in the art are under this invention's idea
On the basis of existing technology by the available technical solution of logical analysis, reasoning, or a limited experiment, all should belong to
In the protection scope determined by claims of the present invention.
Label declaration
101 temperature sensing circuits
102 reference circuits
103 first-class control oscillators
104 second controlled oscillators
105 processors
404,404a, 404b current source
402 latch
Q1, Q2, M3, M4, Q5, Q6, M7, M8, MN1, MP1 transistor
Amp1, Amp2 amplifier
R1, R2, R3, R4 resistance
Cap capacitor
Comp1, Comp2 comparator
VDD bulk potential
CLK clock signal
CLKb inverting clock signal
VbiasBias voltage.
Claims (16)
1. a kind of temperature sensor, comprising:
Temperature sensing circuit is configured to generate sensing electric current relevant to temperature；
Reference circuit is configured to generate temperature independent reference current；
First-class control oscillator is configured to the sensing electric current being converted to sensing frequency；
Second controlled oscillator is configured to the reference current being converted to reference frequency；And
Processor is configured to be normalized the sensing frequency using the reference frequency, generates normalized sensing frequency.
2. temperature sensor as described in claim 1, which is characterized in that the temperature sensing circuit includes:
The emitter of the first transistor, the first transistor connects reference voltage；
The emitter of second transistor, the second transistor connects the reference voltage；
First biasing circuit is configured to bias the base stage of the first transistor and second transistor so that described first is brilliant
Body pipe and second transistor operate in sub-threshold region, and are configured to generation and the difference between first voltage and second voltage
Proportional electric current, wherein the first voltage is that the base stage of the first transistor is electric to the voltage of emitter, described second
Pressure is the base stage of the second transistor to the voltage of emitter；And
The first resistor being connected between the collector of the second transistor and first biasing circuit.
3. temperature sensor as claimed in claim 2, which is characterized in that first biasing circuit includes:
The first input end of amplifier, the amplifier connects the resistance, and the second input terminal connects the first transistor
Collector；
Third transistor is connected between power supply and the collector of the first transistor；
4th transistor is connected between power supply and the resistance；And
Wherein the third transistor connects the output end of the amplifier with the grid of the 4th transistor.
4. temperature sensor as described in claim 1, which is characterized in that the reference circuit includes:
The emitter of 5th transistor, the 5th transistor connects reference voltage；
The emitter of 6th transistor, the 6th transistor connects the reference voltage；
Second biasing circuit is configured to bias the base stage of the 5th transistor and the 6th transistor so that the described 5th is brilliant
Body pipe and the 6th transistor operate in sub-threshold region, and are configured to generation and the difference between tertiary voltage and the 4th voltage
Proportional electric current, wherein the tertiary voltage is that the base stage of the 5th transistor is electric to the voltage of emitter, described second
Pressure is the base stage of the 6th transistor to the voltage of emitter；And
The second resistance being connected between the collector and second biasing circuit of the 6th transistor；
The 3rd resistor being connected between the collector and emitter of the 5th transistor；And
The 4th resistance being connected between the emitter and second biasing circuit of the 6th transistor.
5. temperature sensor as claimed in claim 4, which is characterized in that second biasing circuit includes:
Amplifier, the first input end of the amplifier connect the second resistance, and the second input terminal connects the 5th crystal
The collector of pipe；
7th transistor is connected between power supply and the collector of the 5th transistor；
8th transistor is connected between power supply and the second resistance；And
Wherein the grid of the 7th transistor and the 8th transistor connects the output end of the amplifier.
6. temperature sensor as claimed in claim 4, which is characterized in that the first resistor to the 4th resistance is identical electricity
Resistance.
7. temperature sensor as described in claim 1, which is characterized in that the first-class control oscillator and second flow control
Oscillator process corner having the same.
8. temperature sensor as described in claim 1, which is characterized in that the first-class control oscillator and second flow control
Oscillator is identical.
9. temperature sensor as described in claim 1, which is characterized in that the first-class control oscillator and/or the second flow control
Oscillator is relaxor, including the first oscillation sub-circuit, the second oscillation sub-circuit and latch, in which:
It is described first oscillation sub-circuit and it is described second oscillation sub-circuit respectively include current source, switching device, capacitor and
Comparator,
The first oscillation sub-circuit provides the first output signal to the latch,
The second oscillation sub-circuit provides the second output signal to the latch,
The latch generates oscillation output signal according to first output signal and second output signal,
Switching device of the oscillation output signal feedback to the first oscillation sub-circuit and the second oscillation sub-circuit.
10. temperature sensor as claimed in claim 9, which is characterized in that the oscillation output signal includes one group anti-each other
The clock signal of phase.
11. temperature sensor as claimed in claim 9, which is characterized in that the first oscillation sub-circuit and second vibration
Vagrant's circuit shares a capacitor.
12. temperature sensor as claimed in claim 11, which is characterized in that
The voltage of the capacitor is compared by the comparator of the first oscillation sub-circuit with reference upper level voltage,
The voltage of the capacitor is compared by the comparator of the second oscillation sub-circuit with reference lower limit voltage.
13. temperature sensor as claimed in claim 12, which is characterized in that
When the voltage of the capacitor drops to the reference lower limit voltage or less, by the first oscillation sub-circuit to institute
Capacitor to be stated to charge, the switching device of the second oscillation sub-circuit disconnects,
When the voltage of the capacitor rises to the reference upper level voltage or more, by the second oscillation sub-circuit to institute
It states capacitor to discharge, the switching device of the first oscillation sub-circuit disconnects.
14. temperature sensor as claimed in claim 10, which is characterized in that
The first oscillation sub-circuit and the second oscillation sub-circuit share a current source,
When charging by capacitor of the first oscillation sub-circuit to the first oscillation sub-circuit, pass through described the
Two oscillation sub-circuits discharge to the capacitor of the second oscillation sub-circuit,
When discharging by capacitor of the first oscillation sub-circuit to the first oscillation sub-circuit, pass through described the
Two oscillation sub-circuits charge to the capacitor of the second oscillation sub-circuit.
15. temperature sensor as described in claim 1, which is characterized in that the processor is configured to the sensing frequency
Divided by the reference frequency to realize normalization.
16. a kind of storage chip, including such as the described in any item temperature sensors of claim 1-15.
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| CN201810712435.7A CN109060162A (en) | 2018-06-29 | 2018-06-29 | temperature sensor |
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