CN103837512A - High-voltage biasing circuit of avalanche photodiode applied to weak fluorescence measurement - Google Patents
High-voltage biasing circuit of avalanche photodiode applied to weak fluorescence measurement Download PDFInfo
- Publication number
- CN103837512A CN103837512A CN201410046068.3A CN201410046068A CN103837512A CN 103837512 A CN103837512 A CN 103837512A CN 201410046068 A CN201410046068 A CN 201410046068A CN 103837512 A CN103837512 A CN 103837512A
- Authority
- CN
- China
- Prior art keywords
- resistance
- unit
- control signal
- temperature
- positive
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
Images
Abstract
The invention discloses a high-voltage biasing circuit of an avalanche photodiode (APD) applied to weak fluorescence measurement. The high-voltage biasing circuit is composed of a control signal unit, a control signal conditioning unit, a non-temperature drift amplification unit, an output buffer unit and a feedback unit. Signal conditioning is carried out on a control signal by the control signal conditioning unit; the processed signal is amplified by the control signal conditioning unit to obtain a needed bias voltage value; and the output buffer unit and the feedback unit are used for controlling stability of the output. According to the invention, on the basis of the method of mutual coupling of temperature drift coefficients between components, a problem of drifting of the voltage of the previous high-voltage biasing circuit due to the temperature drift can be solved. And the high-voltage biasing circuit has the advantages that high-voltage output with high temperature stability is realized and the output is not reduced with signal increasing and the like. And thus the high-voltage biasing demand during APD working is satisfied.
Description
Technical field
The invention belongs to biomedical detection field, be specifically related to the HVB high voltage bias circuit of the avalanche diode APD that is applied to faint fluorescence measurement.
Background technology
At biomedical sector, fluorescent technique is often used to carry out qualitative and quantitative measurment, the research of cell surface immune protein, DNA content mensuration of material etc.Because fluorescence intensity is very faint, and APD(avalanche diode) can realize avalanche multiplication, and quantum efficiency is high, and low price, therefore is often used to test fluorescence intensity.The normal need of work tens of APD is to the HVB high voltage bias of several hectovolts, and its multiplication factor changes along with the rising of voltage, therefore, in order to guarantee measurement result accuracy, need to provide stable bias voltage, to guarantee that APD carries out the measurement of fluorescence intensity accurately.
APD is at optical communication field, obtained application very widely, as U.S. Pat 5625181A, and US6031219A, US6643472B1 etc., but have very large different from its application demand at biomedical sector.In optical communication, optoelectronic receiver only needs ' 0 ' (nothing) of resolved light signal and the difference of ' 1 ' (having) conventionally, and at biomedical sector, the research of fluorescence is not only rested on stage of ' 0 ' (nothing) and ' 1 ' (having), but to tell two or more, even 8 kinds of different strength signals (flow cytometry), and guarantee the good linearity, the stability requirement of the bias voltage of therefore exporting for APD is more strict.
Optical receiver system described in U.S. Pat 5625181A is mainly by SELF-BIAS SECTION(automatic biasing part), APD BIAS CONTROL LOOP SECTION(avalanche diode biasing control loop part), TEMPERATURE COMPENSATION SECTION(temperature compensation part) three part compositions, it deposits problem both ways:
1, bias voltage output meeting reduces along with the increase of light signal.In automatic biasing part, in the time that light signal increases, the electric current that flows through APD can increase, and this electric current forms pressure drop meeting increase (also larger 1M left and right of R1 conventionally) by R1, and this can cause the bias voltage of APD to reduce;
2, bias voltage can change along with the drift of temperature.In avalanche diode biasing control loop part, in the time of temperature drift, the intrinsic temperature of the PN junction of TR1 is floated for 2mv/ ℃, and wherein the voltage (Vbe) between base stage and the emitter of TR1 has the temperature drift of 2mv/ ℃, and total temperature drift can be calculated with following formula:
, suppose that R1/R4 equals 50,2 ℃ of temperature drifts, bias voltage drift 200mV, such bias voltage drift will cause the change in gain of APD, thereby affects the accuracy of result.Although there is temperature compensation part, it is a general value that but the temperature of TR1 is floated coefficient, it is also unpractical that each module is carried out to meticulous experiment compensates, so TR1 is just used for the variation of the APD gain that compensation causes due to temperature variation conventionally.
Summary of the invention
The bias voltage output meeting the object of the invention is in order to overcome traditional APD HVB high voltage bias circuit reduces the problem that can change along with the drift of temperature with bias voltage along with the increase of light signal, make APD can carry out more accurately the test of bioluminescence aspect.
For realizing above-mentioned technical purpose, reach above-mentioned technique effect, the present invention is achieved through the following technical solutions:
Be applied to the HVB high voltage bias circuit of the avalanche diode APD of faint fluorescence measurement, comprise control signal unit, control signal conditioning unit, float amplifying unit without temperature, output buffer cell and feedback unit, the control signal of described control signal unit output makes its output signal be applicable to specific APD pipe after the unit adjustment of described signal condition, this output signal is floated amplifying unit amplification through described without temperature, export a high-voltage signal, this electric signal is exported the bias voltage of APD pipe after described output buffer cell, the output voltage of described output buffer cell is input in described signal condition unit and forms backfeed loop through described feedback unit output feedback signal, wherein:
Described nothing temperature is floated amplifying unit and is mainly comprised two complementary positive-negative-positive triodes and a NPN type triode, and the emitter of wherein said positive-negative-positive triode connects the ground level of a described NPN type triode;
Further, described control signal unit comprises temperature survey chip, described signal condition unit mainly comprises totalizer, the output terminal of described temperature survey chip connects the inverting input of described totalizer by adjustable resistance R22, the inverting input of described totalizer is connection control signal end Vctrl also, and the output terminal of described totalizer also connects the ground level of described positive-negative-positive triode;
Preferably, the value of described adjustable resistance R22 regulates according to the temperature coefficient of avalanche diode, the variation of the gain of the avalanche diode that compensation causes along with temperature variation.
Further, described output buffer cell comprises a 2nd NPN type triode, the ground level of described the 2nd NPN type triode connects the collector of a described NPN type triode, described feedback unit comprises divider resistance R51 and resistance R 52, one end of described resistance R 52 connects the emitter of described the 2nd NPN type triode, the other end connects respectively positive input and the described resistance R 51 of described totalizer, the other end ground connection of described resistance R 51.
Preferably, described resistance R 51 can be formed in parallel by two or more resistance.
Preferably, described resistance R 52 can be in series by two resistance or multiple resistance.
The invention has the beneficial effects as follows:
The way that the present invention adopts the temperature drift coefficient between components and parts to intercouple, has eliminated the voltage of HVB high voltage bias circuit in the past with the problem of temperature drift, can realize the High voltage output of high-temperature stability, the HVB high voltage bias demand while meeting APD work.
Accompanying drawing explanation
Fig. 1 is the block diagram of system of the present invention;
Fig. 2 is biasing circuit figure of the present invention, wherein, in order to narrate conveniently, in figure, resistance 21, adjustable resistance 22, resistance 23, resistance 32, resistance 34, resistance 35, resistance 51 and resistance 52 are distinguished corresponding R21, R22, R23, R32, R34, R35, R51 and R52 in formula.
Embodiment
Below with reference to the accompanying drawings and in conjunction with the embodiments, describe the present invention in detail.
Shown in Fig. 1, be applied to the HVB high voltage bias circuit of the avalanche diode APD of faint fluorescence measurement, comprise control signal unit 1, control signal conditioning unit 2, float amplifying unit 3, output buffer cell 4 and feedback unit 5 without temperature;
Shown in Fig. 2, described nothing temperature is floated amplifying unit 3 and is mainly comprised two complementary positive-negative-positive triodes 31 and a NPN type triode 33, the emitter of wherein said positive-negative-positive triode 31 connects the ground level of a described NPN type triode 33, and meet high level Vcc by resistance 32, the grounded collector of described positive-negative-positive triode 31, the emitter of a described NPN type triode 33 is by resistance 35 ground connection, and its collector meets high level HV by resistance 34;
Described control signal unit 1 comprises temperature survey chip 11, described signal condition unit 2 mainly comprises totalizer 24, the output terminal of described temperature survey chip 11 connects the inverting input of described totalizer 24 by adjustable resistance 22, the inverting input of described totalizer 24 is also respectively by the output terminal of resistance 21 and resistance 23 connection control signal end Vctrl and totalizer 24, and the output terminal of described totalizer 24 also connects the ground level of described positive-negative-positive triode 31;
Described output buffer cell 4 comprises a 2nd NPN type triode 41, the ground level of described the 2nd NPN type triode 41 connects the collector of a described NPN type triode 33, the collector of described the 2nd NPN type triode 41 meets high level HV, described feedback unit 5 comprises divider resistance 51 and resistance 52, one end of described resistance 52 connects the emitter of described the 2nd NPN type triode 41, the other end connects respectively positive input and the described resistance 51 of described totalizer 24, the other end ground connection of described resistance 51.
Continue with reference to Fig. 2, in the present embodiment, set the scale-up factor k1=R23/R21 of the control signal of totalizer 24, the ratio k2=R23/R22 of totalizer 24 temperature survey chip signal output, float the gain coefficient M=R34/R35 of amplifying unit 3 without temperature, feedback unit 5 feedback factor β=R51/ (R51+R52), the APD bias voltage of output is Vapd, input control signal Vctrl, temperature survey chip signal output Vt, imbalance value b(refers to the joint effect factor of the Vbe of not matching value between triode 31 and triode 33 and triode 41), so output has following relation with input:
(1-1)
Three of above-mentioned formula (1-1), Section 1 is control signal gain, and Section 2 is the gain of temperature survey chip signal output, and Section 3 is intercept, and first two is the magnitude of voltage of circuit output in 0 o'clock.
According to above-mentioned formula (1-1), can build according to demand actual circuit, example is as follows:
Suppose that Vctrl scope is 0 to 3V, adopt a APD pipe of shore pine, its temperature coefficient k=0.65V/ ℃, high pressure HV is 200V, needs the voltage range regulating from 70V to 150V.Temperature survey chip is output as 10 mV/ ℃, exports 250mV when room temperature 25 is spent.
According to the circuit structure framework circuit providing in Fig. 2, and determine that according to formula parameter step is as follows:
1, determine control signal gain.The amplitude of oscillation 0 to 3v of control signal should be corresponding to the voltage-regulation scope 70V requiring to 150V, so
;
2, determine the gain of temperature survey chip signal output.In order to realize the tc compensation of APD pipe, need temperature survey chip signal output can compensate APD pipe temperature coefficient k=0.65V/ ℃, so
, integrating step 1 can obtain,
;
3, determine minimum output voltage signal.Minimum output voltage signal is 70V, considers in room temperature situation, and the output voltage values of temperature measurement signal is not 0, and getting it is 25 ℃, is output as 0.25V, so Vh=200V
;
4, calculate k1, k2, the value of β.Suppose to get R34=1M Ω, R35=20k Ω without the problem of warm power consumption of floating amplifying unit gain M=50(consideration in step 3), in the situation that M is definite, b is a constant, it affects the constant that just superposes on the magnitude of voltage of calculating, is rule of thumb made as 5V,
, in conjunction with
and step 1, the formula in step 2 calculates
,
,
;
5, determine resistance value.Get R23=10k Ω, R21=5.17 k Ω so, R22=2.12 k Ω,
Get R52=10.2M, R51=70.6 k Ω so,
R32 is that current-limiting resistance is got 1k Ω, and Vcc gets 5V;
6, fine setting.In order to reduce costs, require undemanding resistance to be adjusted into standard value to gain, get R21=5.1 k Ω, R52 is 2 5.1M Ω series connection, R51 is taken as 68k Ω.R22 is taken as the adjustable resistance of 5k Ω.Triode model 31 pipes adopt MPSA92, and 33 and 41 pipes adopt MPSA42.By
be recalculated as R22=2.212, control signal gain
.
The foregoing is only the preferred embodiments of the present invention, be not limited to the present invention, for a person skilled in the art, the present invention can have various modifications and variations.Within the spirit and principles in the present invention all, any modification of doing, be equal to replacement, improvement etc., within all should being included in protection scope of the present invention.
Claims (6)
1. be applied to the HVB high voltage bias circuit of the avalanche diode APD of faint fluorescence measurement, comprise control signal unit (1), control signal conditioning unit (2), output buffer cell (4) and feedback unit (5), is characterized in that, also comprise without temperature and float amplifying unit (3), wherein:
Describedly float amplifying unit (3) without temperature and mainly comprise two complementary positive-negative-positive triodes (31) and a NPN type triode (33), the emitter of wherein said positive-negative-positive triode (31) connects the ground level of a described NPN type triode (33).
2. the HVB high voltage bias circuit of the avalanche diode APD that is applied to faint fluorescence measurement according to claim 1, it is characterized in that, described control signal unit (1) comprises temperature survey chip (11), described signal condition unit (2) mainly comprises totalizer (24), the output terminal of described temperature survey chip (11) connects the inverting input of described totalizer (24) by adjustable resistance (22), also connection control signal end Vctrl of the inverting input of described totalizer (24), the output terminal of described totalizer (24) also connects the ground level of described positive-negative-positive triode (31).
3. the HVB high voltage bias circuit of the avalanche diode APD that is applied to faint fluorescence measurement according to claim 2, it is characterized in that, the value of described adjustable resistance (22) regulates according to the temperature coefficient of avalanche diode, the variation of the gain of the avalanche diode that compensation causes along with temperature variation.
4. the HVB high voltage bias circuit of the avalanche diode APD that is applied to faint fluorescence measurement according to claim 1, it is characterized in that, described output buffer cell (4) comprises a 2nd NPN type triode (41), the ground level of described the 2nd NPN type triode (41) connects the collector of a described NPN type triode (33), described feedback unit (5) comprises divider resistance (51) and resistance (52), one end of described resistance (52) connects the emitter of described the 2nd NPN type triode (41), the other end connects respectively positive input and the described resistance (51) of described totalizer (24), the other end ground connection of described resistance (51).
5. the HVB high voltage bias circuit of the avalanche diode APD that is applied to faint fluorescence measurement according to claim 4, is characterized in that, described resistance (51) can be formed in parallel by two or more resistance.
6. the HVB high voltage bias circuit of the avalanche diode APD that is applied to faint fluorescence measurement according to claim 4, is characterized in that, described resistance (52) can be in series by two resistance or multiple resistance.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201410046068.3A CN103837512B (en) | 2014-02-10 | 2014-02-10 | It is applied to the HVB high voltage bias circuit of the avalanche diode APD that week fluorescent is measured |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201410046068.3A CN103837512B (en) | 2014-02-10 | 2014-02-10 | It is applied to the HVB high voltage bias circuit of the avalanche diode APD that week fluorescent is measured |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN103837512A true CN103837512A (en) | 2014-06-04 |
| CN103837512B CN103837512B (en) | 2016-06-29 |
Family
ID=50801228
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201410046068.3A Active CN103837512B (en) | 2014-02-10 | 2014-02-10 | It is applied to the HVB high voltage bias circuit of the avalanche diode APD that week fluorescent is measured |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN103837512B (en) |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN104635825A (en) * | 2014-12-03 | 2015-05-20 | 张石 | APD bias voltage temperature compensation circuit controlled by pure analog circuit and laser ranging system |
| CN109596582A (en) * | 2018-11-23 | 2019-04-09 | 中国科学院苏州生物医学工程技术研究所 | Bioluminescence rapid detection method |
Citations (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5625181A (en) * | 1994-01-12 | 1997-04-29 | Fujitsu Limited | Light-receipt system with current bias circuit and pre-amplifier for use in optical digital communication |
| EP1006591A2 (en) * | 1998-12-03 | 2000-06-07 | Nec Corporation | Circuit, method and record medium for applying DC bias voltage to avalanche photodiode |
| CN201332100Y (en) * | 2008-11-28 | 2009-10-21 | 深圳世纪晶源光子技术有限公司 | Temperature-compensating circuit of avalanche photodiode bias voltage |
| CN101593786A (en) * | 2009-06-23 | 2009-12-02 | 上海华魏光纤传感技术有限公司 | The temperature-compensation circuit that is used for avalanche photodide |
| CN102798466A (en) * | 2011-05-27 | 2012-11-28 | 上海华魏光纤传感技术有限公司 | APD (Avalanche Photo Diode) reverse bias voltage control circuit with temperature compensation |
| CN202601624U (en) * | 2012-06-25 | 2012-12-12 | 杭州欧忆光电科技有限公司 | Automatic compensating device for gain and temperature excursion of avalanche photodiode |
| CN203798736U (en) * | 2014-02-10 | 2014-08-27 | 中国科学院苏州生物医学工程技术研究所 | High-voltage biasing circuit of avalanche photo diode (APD) applied to weak fluorescence measurement |
-
2014
- 2014-02-10 CN CN201410046068.3A patent/CN103837512B/en active Active
Patent Citations (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5625181A (en) * | 1994-01-12 | 1997-04-29 | Fujitsu Limited | Light-receipt system with current bias circuit and pre-amplifier for use in optical digital communication |
| EP1006591A2 (en) * | 1998-12-03 | 2000-06-07 | Nec Corporation | Circuit, method and record medium for applying DC bias voltage to avalanche photodiode |
| CN201332100Y (en) * | 2008-11-28 | 2009-10-21 | 深圳世纪晶源光子技术有限公司 | Temperature-compensating circuit of avalanche photodiode bias voltage |
| CN101593786A (en) * | 2009-06-23 | 2009-12-02 | 上海华魏光纤传感技术有限公司 | The temperature-compensation circuit that is used for avalanche photodide |
| CN102798466A (en) * | 2011-05-27 | 2012-11-28 | 上海华魏光纤传感技术有限公司 | APD (Avalanche Photo Diode) reverse bias voltage control circuit with temperature compensation |
| CN202601624U (en) * | 2012-06-25 | 2012-12-12 | 杭州欧忆光电科技有限公司 | Automatic compensating device for gain and temperature excursion of avalanche photodiode |
| CN203798736U (en) * | 2014-02-10 | 2014-08-27 | 中国科学院苏州生物医学工程技术研究所 | High-voltage biasing circuit of avalanche photo diode (APD) applied to weak fluorescence measurement |
Non-Patent Citations (2)
| Title |
|---|
| SACHIDANANDA S. ET AL.: "Bias voltage control of avalance photo-diode using a window comparator", 《2011IEEE PHOTONICS SOCIETY SUMMER TOPICAL MEETING SERIES》, 20 July 2011 (2011-07-20), pages 25 - 26 * |
| 白宗杰 等: "但光子雪崩二极管探测系统测试与设计分析", 《半导体技术》, vol. 35, no. 8, 31 August 2010 (2010-08-31), pages 775 - 779 * |
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN104635825A (en) * | 2014-12-03 | 2015-05-20 | 张石 | APD bias voltage temperature compensation circuit controlled by pure analog circuit and laser ranging system |
| CN104635825B (en) * | 2014-12-03 | 2016-08-17 | 张石 | The APD that pure analog circuit controls biases temperature compensation circuit and LDMS |
| CN109596582A (en) * | 2018-11-23 | 2019-04-09 | 中国科学院苏州生物医学工程技术研究所 | Bioluminescence rapid detection method |
Also Published As
| Publication number | Publication date |
|---|---|
| CN103837512B (en) | 2016-06-29 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| CN203798736U (en) | High-voltage biasing circuit of avalanche photo diode (APD) applied to weak fluorescence measurement | |
| CN105974991B (en) | With high-order temperature compensated low temperature coefficient with gap reference voltage source | |
| CN104298293B (en) | A kind of bandgap voltage reference with curvature compensation | |
| CN105355704B (en) | Symmetric double PIN balances photodetector | |
| CN103563252B (en) | Automatic gain control circuit | |
| CN101788835A (en) | Band-gap reference source for realizing curvature correction through self-adaptive base current compensation | |
| CN105892548B (en) | Reference voltage generation circuit with temperature compensating function | |
| CN106301346B (en) | With the receiver for stablizing input trigging signal | |
| CN103837512A (en) | High-voltage biasing circuit of avalanche photodiode applied to weak fluorescence measurement | |
| CN105912063B (en) | Band-gap reference circuit | |
| CN108106747A (en) | A kind of temperature sensor based on capacitive digital converter | |
| CN103412608B (en) | A kind of band-gap reference circuit | |
| CN104965556A (en) | Band-gap reference voltage circuit | |
| CN206757446U (en) | Second order compensation band-gap reference circuit for signal amplifier | |
| CN109324655A (en) | A kind of High Precision Exponential temperature-compensating CMOS band-gap reference circuit | |
| CN107515639B (en) | A kind of circuit for generating source voltage of Low Drift Temperature | |
| CN107066018B (en) | A kind of accurate por circuit | |
| CN106873702A (en) | A kind of compensation circuit of piezoresistive pressure sensor | |
| CN203870150U (en) | Isolation type power grid detector | |
| CN109540313A (en) | A kind of linear temperature measurement circuit based on silicon-based diode and NTC thermistor | |
| CN206848852U (en) | A kind of accurate por circuit | |
| CN104868954A (en) | Optical module receiver and 1*9 optical module | |
| US20050151064A1 (en) | Signal strength detection circuits for high speed optical electronics | |
| CN108593128A (en) | A kind of high-precision temperature detection circuit with clamper function | |
| CN211905486U (en) | Low-cost electronic circuit for core-through closed-loop Hall current sensor |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| C06 | Publication | ||
| PB01 | Publication | ||
| C10 | Entry into substantive examination | ||
| SE01 | Entry into force of request for substantive examination | ||
| C41 | Transfer of patent application or patent right or utility model | ||
| TA01 | Transfer of patent application right |
Effective date of registration: 20151216 Address after: Kolding road high tech Zone of Suzhou City, Jiangsu Province, No. 88 215000 Applicant after: SUZHOU INSTITUTE OF BIOMEDICAL ENGINEERING AND TECHNOLOGY, CHINESE ACADEMY OF SCIENCES Address before: Kolding road high tech Zone of Suzhou City, Jiangsu Province, No. 88 215000 Applicant before: Suzhou Institute of Biomedical Engineering and Technology, Chinese Academy of Sciences |
|
| C41 | Transfer of patent application or patent right or utility model | ||
| TA01 | Transfer of patent application right |
Effective date of registration: 20160324 Address after: Science and Technology City kolding road high tech Zone of Suzhou City, Jiangsu Province, No. 88 215163 Applicant after: SUZHOU INSTITUTE OF BIOMEDICAL ENGINEERING AND TECHNOLOGY, CHINESE ACADEMY OF SCIENCES Address before: Kolding road high tech Zone of Suzhou City, Jiangsu Province, No. 88 215000 Applicant before: SUZHOU INSTITUTE OF BIOMEDICAL ENGINEERING AND TECHNOLOGY, CHINESE ACADEMY OF SCIENCES |
|
| C14 | Grant of patent or utility model | ||
| GR01 | Patent grant | ||
| EE01 | Entry into force of recordation of patent licensing contract |
Application publication date: 20140604 Assignee: Zhongsheng (Suzhou) Medical Instrument Co., Ltd. Assignor: SUZHOU INSTITUTE OF BIOMEDICAL ENGINEERING AND TECHNOLOGY, CHINESE ACADEMY OF SCIENCES Contract record no.: 2017320010008 Denomination of invention: High-voltage biasing circuit of avalanche photodiode applied to weak fluorescence measurement Granted publication date: 20160629 License type: Exclusive License Record date: 20170307 |
|
| EE01 | Entry into force of recordation of patent licensing contract |