CN108593128A - A kind of high-precision temperature detection circuit with clamper function - Google Patents
A kind of high-precision temperature detection circuit with clamper function Download PDFInfo
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- CN108593128A CN108593128A CN201810365627.5A CN201810365627A CN108593128A CN 108593128 A CN108593128 A CN 108593128A CN 201810365627 A CN201810365627 A CN 201810365627A CN 108593128 A CN108593128 A CN 108593128A
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- G—PHYSICS
- G01—MEASURING; TESTING
- G01K—MEASURING TEMPERATURE; MEASURING QUANTITY OF HEAT; THERMALLY-SENSITIVE ELEMENTS NOT OTHERWISE PROVIDED FOR
- G01K7/00—Measuring temperature based on the use of electric or magnetic elements directly sensitive to heat ; Power supply therefor, e.g. using thermoelectric elements
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- G—PHYSICS
- G05—CONTROLLING; REGULATING
- G05F—SYSTEMS FOR REGULATING ELECTRIC OR MAGNETIC VARIABLES
- G05F1/00—Automatic systems in which deviations of an electric quantity from one or more predetermined values are detected at the output of the system and fed back to a device within the system to restore the detected quantity to its predetermined value or values, i.e. retroactive systems
- G05F1/10—Regulating voltage or current
- G05F1/46—Regulating voltage or current wherein the variable actually regulated by the final control device is dc
- G05F1/56—Regulating voltage or current wherein the variable actually regulated by the final control device is dc using semiconductor devices in series with the load as final control devices
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- General Physics & Mathematics (AREA)
- Engineering & Computer Science (AREA)
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Abstract
The invention belongs to field of analog integrated circuit, specifically propose a kind of high-precision temperature detection circuit with clamper function.The circuit includes reference voltage generating section and temperature detection part.The present invention passes through transistor base emitter voltage VbeWith the linear relationship of temperature, the reference voltage V REF1 and the PTAT voltage VREF2 directly proportional to temperature of an approximate zero-temperature coefficient are generated.It has obtained that voltage Vsense can be detected correspondingly with temperature by a series of processing of circuit, thus voltage can be with the real time temperature of scale unit.Compared with traditional structure, the detection voltage Vsense that this circuit generates is more preferable about the linearity of temperature, can more accurately determine the temperature of circuit.
Description
Technical field
The invention belongs to Analogous Integrated Electronic Circuits technical field more particularly to a kind of high-precision temperature detections with clamper function
Circuit.
Background technology
As chip integration is higher and higher, the performance and power consumption of chip are all being promoted rapidly, cause chip in certain feelings
Such as work long hours under condition or external voltage increase when, chip temperature can rise rapidly, if being handled not in time at this time, high temperature
Chip internal circuits may be caused to damage.So the temperature of chip is detected it is particularly important, in high-precision application very
To needing to monitor temperature in real time to obtain the real-time performance of chip.In analog circuit, some semiconductors can be utilized
Device parameters are converted to the detection to temperature about the linear relationship of temperature.
Invention content
The present invention is directed to the problem of temperature detection, provides one kind with voltage clamping function and the accurate detection chip reality of energy
The temperature sensing circuit of Shi Wendu.
To solve the above-mentioned problems, the present invention uses following technical scheme：
A kind of high-precision temperature detection circuit with clamper function, including reference voltage generating section and temperature detecting part
Point；
The reference voltage generating circuit 1, which is characterized in that the circuit part includes Low Drift Temperature bandgap voltage reference
It generates part 3 and PTAT bandgap voltage references generates part 4；Low Drift Temperature bandgap voltage reference generates in part 3, Q1 and Q2 hairs
Emitter grounding, the emitter region area of Q1 are 24 times of Q2, and the base stage of Q1 is connected with collector in the one end resistance R4, the base stage of Q2
It is connected with collector in the inverting input of one end of R3 and amplifier OP1, another positive inputs for terminating at amplifier OP1 of R4
The other end of the one end at end and R2, R2 and R3 are connected on one end of R1, and the output of OP1 terminates at the other end of resistance R1, OP1's
Output end is Low Drift Temperature bandgap voltage reference VREF1；PTAT bandgap voltage references generate in part 4, the base stage of Q3 and Q2's
Base stage is connected, the emitter of Q3 ground connection, the collector of Q3 be connected on the drain electrode of MP1, the grid of MP3 and MP4 grid, the source of MP1
Grade is connected on the drain electrode of MP3, and the grid of MP1 is connected on the grid of MP2, and the source level that the source level of MP3 and MP4 is connected on power vd D, MP2 connects
In the drain electrode of MP4, the drain electrode of MP2 is connected on one end of R5, and the other end ground connection of R5, the drain voltage of MP2 is PTAT band gap bases
Quasi- voltage.
The temperature detection part 2 with clamper function, which is characterized in that the part includes clamp circuit part 5
With temperature sensing circuit portions point 6；Comprising clamp circuit part 5 in, current source IBIAS mono- terminate VDD, it is another to terminate at
The drain electrode of MN2 and grid, the grid of the grid of MN3 and MN6, the source level of MN2 be connected on the drain and gate of MN4, MN5 grid and
The grid of MN7, the source level ground connection of MN4, the source level ground connection of MN5, the drain electrode of MN5 are connected with the source level of MN3, and the drain electrode of MN3 is connected on
The drain and gate of MP5, the grid of MP8, the source level of MP5 are connected on the grid of the drain and gate of MP6, MP7, and the source level of MP6 connects
In VDD, the source level of MP7 meets VDD, the drain electrode of MP7 connect the drain electrode of the source level, MN6 of MP8, OP2 output end, the drain electrode of MP8 with
The drain electrode of the source level, MN7 of MN6, the output end of OP3 are connected, the source level ground connection of MN7；In comprising temperature sensing circuit portions point,
VREF2 is connected on the normal phase input end of OP2 and OP3, and the output of OP2 terminates at the grid of MP9 and one end of R7, the other end of R7
One end of C1 is connect, the source level of the drain electrode of another termination MP9 of C1, MP9 meets VDD, and the output of OP3 terminates at the grid and R8 of MN8
One end, one end of another termination C2 of R8, the drain electrode of another termination MN8 of C2, MN8 source level ground connection, the drain electrode of MP9 and
The drain electrode of MN8, which is connected, is attempted by one end of R9, another inverting input for terminating at OP2 and OP3 of R9, one end of R10, R10
Another termination OP4 inverting input and MP10 drain electrode, the normal phase input end of OP4 connects VREF1, the output termination of OP4
The grid of MP10 and one end of R11, one end of another termination C3 of R11, the drain electrode of another termination MP10 of C3 and the leakage of MN9
The source level of pole, MP10 meets VDD, and the source level ground connection of MN9, it is to adopt that the grid of MN9, which connects the drain voltage of bias voltage VBIAS, MP9,
Sample voltage Vsense.
Description of the drawings
Fig. 1 is the system principle diagram of the present invention；
Fig. 2 is reference voltage generating circuit schematic diagram in the present invention；
Fig. 3 is the high-precision temperature detection circuit schematic diagram with clamper function in the present invention；
Specific implementation mode
Below in conjunction with the accompanying drawings, the present invention is described in detail.
System principle diagram shown in Fig. 1 to realize the present invention, including：Bandgap Reference Voltage Generation Circuit 1, band clamper work(
The temperature detection part 2 of energy.
Can be generated in Bandgap Reference Voltage Generation Circuit 1 Low Drift Temperature bandgap voltage reference VREF1 and one with
The directly proportional PTAT voltage VREF2 of temperature, but VREF1 and VREF2 are not completely and temperature line relationship, so by two
A voltage carries out subtraction by temperature sensing circuit portions point 2, the higher order term in its expression formula can disappear, to obtain
One with temperature at the voltage of good linearity, i.e. a high-precision temperature detection voltage Vsense.Meanwhile temperature detection electricity
Also there is voltage clamp circuit in road, amplifier OP2 and OP3 can be avoided under extreme input condition vacantly to detect the feelings of failure
Condition.
Fig. 2 is the concrete structure of Bandgap Reference Voltage Generation Circuit.It can be by the emitter of Q2 by the empty short characteristics of amplifier OP1
Current potential and the current potential of the upper ends R4 keep identical, so that R2 is flowed through in guarantee and the electric current of R3 is equal, i.e. the collector current of Q1 and Q2
Equal, it is I to enable itC1, can formulation from R1 lower end to ground：
IC1·(R2+R4)+VBE1=IC1·R3+VBE2 (1)
It can obtainThe electric current is PTAT current.Wherein VBEIndicate the base emitter voltage of corresponding NPN pipes.
Then the voltage value of VREF1 is：
Since VT is the value of positive temperature coefficient, VBEIt is the value of negative temperature coefficient, as long as the coefficient of two amounts is appropriate, so that it may with
Obtain the reference voltage V REF1 of a Low Drift Temperature.But the voltage of Low Drift Temperature is can only obtain, it is unable to get and does not become substantially with temperature
The voltage of change.
The emitter junction area equation of Q2 and Q3, can be equivalent to a current mirror, therefore the collector current IC3 and Q2 of Q3
Collector current IC1 it is identical, be PTAT current, which flows through resistance R5 by a low voltage cascade current mirror,
The voltage generated on R5 is PTAT voltage, and expression formula is：
The temperature coefficient of VREF2 depends on VT and its proportionality coefficient it can be seen from equation, therefore VREF2 is a PTAT
Voltage reference.
Fig. 3 is the circuit structure diagram that temperature detection is carried out in the invention.Wherein amplifier OP2, OP3, OP4 is empty using it
Short characteristic, by V1 voltage clampings to VREF2, V2 voltage clampings to VREF1.Amplifier adds zero-regulator resistor to carry out by miller capacitance
Frequency loop compensation makes circuit stability.
Since the voltage of V1 and V2 is respectively equal to VREF2 and VREF1, therefore the electric current that can obtain flowing through resistance R10 is：
The expression formula of temperature detection voltage Vsense can then be obtained：
By formula (5) as it can be seen that the temperature coefficient of resistance is about fallen, VREF1 and subtracting each other for VREF2 can cut two benchmark electricity
The higher order term that temperature coefficient is influenced in pressure, obtains a better PTAT voltage of the linearity, to produce high-precision temperature
Detect voltage.
In addition, there is the clamping structure being made of MP7, MP8, MN6, MN7 in the circuit.By common-source common-gate current mirror
Structure is it is recognised that the drain voltage of MP7 is clamped to the drain voltage i.e. VDD-V of MP6GS6, the drain voltage of MN7 also clamped
Drain voltage, that is, V of MN4 is arrived in positionGS4, do so be the OP2 and OP3 in the case of extreme input output end it is hanging when, MP9
It remains to be maintained at normal operating voltage point with the grid of MN7, temperature detection voltage will not be made to generate immesurable as a result, influencing
Accuracy of detection.
In conclusion linear pass of the present invention by voltage and temperature before processing of circuit transistor base-emitter
System, obtains the bandgap voltage reference VREF1 that can be approximated to be zero-temperature coefficient and the PTAT reference voltages with positive temperature coefficient
VREF2.By a series of processing, a temperature detection voltage with temperature at good linearity is obtained.Since the linearity is fine,
So the real time temperature of circuit local environment can accurately be obtained from the output Vsense voltages of the circuit.
The one of which embodiment of the present invention is described in detail above, but is only the preferred embodiments of the present invention
.Present invention is not limited to the embodiments described above, those skilled in the art of the present technique within the scope of knowledge, can be with
Or else many possible variations and modification are made under the premise of being detached from present inventive concept, or are revised as the equivalence enforcement of equivalent variations
Example.Therefore, everything substantially does above example without departing from the content of technical solution of the present invention, according to the present invention regional technology
Any modification, equivalent variations or modification, still fall within technical solution of the present invention protection in the range of.
Claims (3)
1. a kind of high-precision temperature detection circuit with clamper function, which is characterized in that including：Reference voltage generating section and temperature
Detection part is spent, temperature sensing circuit by generate in reference voltage generating circuit two voltages by subtracting each other to eliminate voltage
Influence of the higher order term to temperature, to realize the temperature detection of pinpoint accuracy.
2. a kind of high-precision temperature detection circuit with clamper function according to claim 1, which is characterized in that the electricity
Road part includes that Low Drift Temperature bandgap voltage reference generates part 3 and PTAT bandgap voltage references generation part 4；Low Drift Temperature band gap base
In quasi- voltage generation section 3, Q1 and Q2 emitters ground connection, the emitter region area of Q1 is 24 times of Q2, the base stage and collector of Q1
It is connected in the one end resistance R4, the base stage of Q2 is connected with collector in the inverting input of one end of R3 and amplifier OP1, and R4 is another
One end is connected on the normal phase input end of amplifier OP1 and one end of R2, and the other end of R2 and R3 are connected on one end of R1, the output of OP1
The other end of resistance R1 is terminated at, the output end of OP1 is Low Drift Temperature bandgap voltage reference VREF1；PTAT bandgap voltage references
It generates in part 4, the base stage of Q3 is connected with the base stage of Q2, and the emitter ground connection of Q3, the collector of Q3 is connected on the drain electrode of MP1, MP3
Grid and MP4 grid, the source level of MP1 is connected on the drain electrode of MP3, and the grid of MP1 is connected on the grid of MP2, the source of MP3 and MP4
The source level that grade is connected on power vd D, MP2 is connected on the drain electrode of MP4, and the drain electrode of MP2 is connected on one end of R5, and the other end of R5 is grounded, MP2
Drain voltage be PTAT bandgap voltage references.
3. a kind of high-precision temperature detection circuit with clamper function according to claim 1, it is characterised in that the portion
Subpackage part containing clamp circuit 5 and temperature sensing circuit portions point 6；Comprising clamp circuit part 5 in, current source IBIAS mono-
VDD is terminated, another drain electrode for terminating at MN2 is connected on the drain electrode of MN4 with grid, the grid of the grid of MN3 and MN6, the source level of MN2
It is grounded with the source level of grid, the grid of the grid of MN5 and MN7, MN4, the source level ground connection of MN5, the source level of the drain electrode and MN3 of MN5
It is connected, the drain electrode of MN3 is connected on the drain and gate of MP5, the grid of MP8, and the source level of MP5 is connected on the drain and gate of MP6, MP7
Grid, the source level of MP6 is connected on VDD, and the source level of MP7 meets VDD, the drain electrode of MP7 connect the drain electrode of the source level, MN6 of MP8, OP2 it is defeated
The drain electrode of outlet, MP8 is connected with the output end of the source level of MN6, the drain electrode of MN7, OP3, the source level ground connection of MN7；Including temperature
In detection circuit part, VREF2 is connected on the normal phase input end of OP2 and OP3, the output of OP2 terminate at MP9 grid and R7 one
End, the source level of one end of another termination C1 of R7, the drain electrode of another termination MP9 of C1, MP9 meet VDD, and the output of OP3 terminates at
The grid of MN8 and one end of R8, one end of another termination C2 of R8, the drain electrode of another termination MN8 of C2, the source level ground connection of MN8,
The drain electrode of MP9 is connected with the drain electrode of MN8 is attempted by one end of R9, another inverting input for terminating at OP2 and OP3, the R10 of R9
One end, the drain electrode of the inverting input and MP10 of another termination OP4 of R10, the normal phase input end of OP4 meets VREF1, OP4's
Output termination MP10 grid and R11 one end, one end of another termination C3 of R11, the drain electrode of another termination MP10 of C3 and
The source level of the drain electrode of MN9, MP10 meets VDD, and the grid of the source level ground connection of MN9, MN9 connects the drain electrode electricity of bias voltage VBIAS, MP9
Pressure is sampled voltage Vsense.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201810365627.5A CN108593128A (en) | 2018-04-23 | 2018-04-23 | A kind of high-precision temperature detection circuit with clamper function |
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| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201810365627.5A CN108593128A (en) | 2018-04-23 | 2018-04-23 | A kind of high-precision temperature detection circuit with clamper function |
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| Publication Number | Publication Date |
|---|---|
| CN108593128A true CN108593128A (en) | 2018-09-28 |
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| Application Number | Title | Priority Date | Filing Date |
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| CN201810365627.5A Pending CN108593128A (en) | 2018-04-23 | 2018-04-23 | A kind of high-precision temperature detection circuit with clamper function |
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Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN111857220A (en) * | 2019-04-28 | 2020-10-30 | 湖南中车时代电动汽车股份有限公司 | Temperature sampling circuit and control method thereof |
| CN116301168A (en) * | 2023-05-22 | 2023-06-23 | 上海灵动微电子股份有限公司 | Identification circuit for detecting normal operation of band gap reference circuit |
-
2018
- 2018-04-23 CN CN201810365627.5A patent/CN108593128A/en active Pending
Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN111857220A (en) * | 2019-04-28 | 2020-10-30 | 湖南中车时代电动汽车股份有限公司 | Temperature sampling circuit and control method thereof |
| CN111857220B (en) * | 2019-04-28 | 2022-06-07 | 湖南中车时代电动汽车股份有限公司 | Temperature sampling circuit and control method thereof |
| CN116301168A (en) * | 2023-05-22 | 2023-06-23 | 上海灵动微电子股份有限公司 | Identification circuit for detecting normal operation of band gap reference circuit |
| CN116301168B (en) * | 2023-05-22 | 2023-07-21 | 上海灵动微电子股份有限公司 | Identification circuit for detecting normal operation of band gap reference circuit |
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Application publication date: 20180928 |
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