CN203787427U - 一种贴片式高压led(4014双晶led) - Google Patents
一种贴片式高压led(4014双晶led) Download PDFInfo
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- CN203787427U CN203787427U CN201420126503.9U CN201420126503U CN203787427U CN 203787427 U CN203787427 U CN 203787427U CN 201420126503 U CN201420126503 U CN 201420126503U CN 203787427 U CN203787427 U CN 203787427U
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/481—Disposition
- H01L2224/48135—Connecting between different semiconductor or solid-state bodies, i.e. chip-to-chip
- H01L2224/48137—Connecting between different semiconductor or solid-state bodies, i.e. chip-to-chip the bodies being arranged next to each other, e.g. on a common substrate
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/481—Disposition
- H01L2224/48151—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
- H01L2224/48221—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
- H01L2224/48245—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic
- H01L2224/48247—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic connecting the wire to a bond pad of the item
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/481—Disposition
- H01L2224/48151—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
- H01L2224/48221—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
- H01L2224/48245—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic
- H01L2224/48257—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic connecting the wire to a die pad of the item
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- Led Devices (AREA)
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Abstract
本实用新型公开了一种贴片式高压LED(4014双晶LED),包括:起支撑和导电作用的PPA支架;通过粘结胶固定在所述PPA支架上的两个串联发光晶片;连接所述发光晶片和所述PPA支架的金线;密封保护所述发光晶片和所述金线的填充胶。本实用新型使用了两颗小功率发光晶片串联组成,这样的串联组合就使驱动电流比较低,也就减小了眩光,使发光均匀性也更好,并且使用时所产生的热量就会较少,散热性能就更进一步的提高了,进而提高了LED的使用寿命。另外常规的4014LED电压为3V左右,两个发光晶片串联后的电压为6V左右,用户也可以根据自己的需求来选用不同电压的LED。
Description
技术领域
本实用新型涉及LED灯珠技术领域,更具体的说是涉及一种贴片式高压LED(4014双晶LED)。
背景技术
LED(发光二极管)应用非常广泛,目前市场上存在着一些常规的4014LED,再要达到其所需要的亮度的情况下,需要的驱动电流相对就比较高,这样就会产生更高的热量,而若LED的热量没有及时散出来的话,整体温度就会逐渐上升,这样就会导致荧光粉量子效率降低、出光减少,辐射波长也会发生变化,就加速了荧光粉的老化,从而引起该LED色温、色度的变化,导致LED的使用寿命降低。
综上所述,如何提供一种能够达到4014LED的亮度的同时,而驱动电流低,散热比较少的LED是本领域技术人员亟需解决的问题。
实用新型内容
有鉴于此,一种贴片式高压LED(4014双晶LED),包括:
起支撑和导电作用的PPA支架;
通过粘结胶固定在所述PPA支架上的两个串联发光晶片;
连接所述发光晶片和所述PPA支架的金线;
密封保护所述发光晶片和所述金线的填充胶。
优选的,在上述贴片式LED(4014LED)中,还包括设置于PPA支架下方,并连接所述发给晶片的散热片。
优选的,在上述贴片式LED(4014LED)中,所述PPA支架的长、宽和高分别为4.0mm、1.4mm和0.7mm。
经由上述的技术方案可知,与现有技术相比,本实用新型公开提供了一种贴片式高压LED(4014双晶LED),与常规的4014LED相比较,本实用新型使用了两颗小功率发光晶片串联组成,这样的串联组合就使驱动电流比较低,也就减小了眩光,使发光均匀性也更好,并且使用时所产生的热量就会较少,散热性能就更进一步的提高了,进而提高了LED的使用寿命。另外常规的4014LED电压为3V左右,两个发光晶片串联后的电压为6V左右,用户也可以根据自己的需求来选用不同电压的LED。
附图说明
为了更清楚地说明本实用新型实施例或现有技术中的技术方案,下面将对实施例或现有技术描述中所需要使用的附图作简单地介绍,显而易见地,下面描述中的附图仅仅是本实用新型的实施例,对于本领域普通技术人员来讲,在不付出创造性劳动的前提下,还可以根据提供的附图获得其他的附图。
图1附图为本实用新型的正面结构示意图。
图2附图为本实用新型的侧面结构示意图。
在图1中,101为两个发光晶片、102为金线、103为粘结胶、104为填充胶、105为PP支架。
具体实施方式
下面将结合本实用新型实施例中的附图,对本实用新型实施例中的技术方案进行清楚、完整地描述,显然,所描述的实施例仅仅是本实用新型一部分实施例,而不是全部的实施例。基于本实用新型中的实施例,本领域普通技术人员在没有做出创造性劳动前提下所获得的所有其他实施例,都属于本实用新型保护的范围。
如图1所示:
本实用新型实施例公开了一种贴片式高压LED(4014双晶LED),包括:起支撑和导电作用的PPA支架105;通过粘结胶固定在所述PPA支架105上的两个串联发光晶片101;连接所述发光晶片101和所述PPA支架105的金线102;密封保护所述发光晶片101和所述金线102的填充胶104。整体的框架PPA支架105对整体贴片式LED(4014LED)起到支撑作用,并能够导电,联通整体的作用,还能够将两个发光晶片101没消耗的电能转化成的热能即时散发出来;金线102连接了发光晶片101的芯片表面电极和PPA支架105,起到导线连接的作用;整体内部填充104填充胶将其包裹起来,凝固后可以保护内部发光晶片101和金线102等不受损坏。
与常规的4014LED相比较,本实用新型使用了两颗小功率发光晶片串联组成,这样的串联组合就使驱动电流比较低,也就减小了眩光,使发光均匀性也更好,并且使用时所产生的热量就会较少,散热性能就更进一步的提高了,进而提高了LED的使用寿命。另外常规的4014LED电压为3V左右,两个发光晶片串联后的电压为6V左右,用户也可以根据自己的需求来选用不同电压的LED。
为了进一步优化上述技术方案,本实施例还设置了连接发光晶片101,在PPA支架下方的散热片。使该LED(4014LED)不仅在两端有散热点,还在中间添加了一大块散热片。
如图2所示:
本实施例的LED(4014LED)高度设置为0.70mm。这个高度是属于本行业内的主流,具有很高的互换性。
本说明书中各个实施例采用递进的方式描述,每个实施例重点说明的都是与其他实施例的不同之处,各个实施例之间相同相似部分互相参见即可。对于实施例公开的装置而言,由于其与实施例公开的方法相对应,所以描述的比较简单,相关之处参见方法部分说明即可。
对所公开的实施例的上述说明,使本领域专业技术人员能够实现或使用本实用新型。对这些实施例的多种修改对本领域的专业技术人员来说将是显而易见的,本文中所定义的一般原理可以在不脱离本实用新型的精神或范围的情况下,在其它实施例中实现。因此,本实用新型将不会被限制于本文所示的这些实施例,而是要符合与本文所公开的原理和新颖特点相一致的最宽的范围。
Claims (3)
1.一种贴片式高压LED(4014双晶LED),其特征在于,包括:
起支撑和导电作用的PPA支架(105);
通过粘结胶(103)固定在所述PPA支架(105)上的两个串联发光晶片(101);连接所述发光晶片(101)和所述PPA支架(105)的金线(102);
密封保护所述发光晶片(101)和所述金线(102)的填充胶(104)。
2.根据权利要求1所述的贴片式LED(4014LED),其特征在于,还包括设置于PPA支架(105)下方,并连接所述发给晶片(101)的散热片。
3.根据权利要求1所述的贴片式LED(4014LED),其特征在于,所述PPA支架(105)的长、宽和高分别为4.0mm、1.4mm和0.7mm。
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Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
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CN105645207A (zh) * | 2016-03-25 | 2016-06-08 | 江苏威尔曼科技有限公司 | 一种集成梯号牌的led贴片到站灯 |
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Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
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CN105645207A (zh) * | 2016-03-25 | 2016-06-08 | 江苏威尔曼科技有限公司 | 一种集成梯号牌的led贴片到站灯 |
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