CN203775175U - Absorption-type single-pole eight-throw switch - Google Patents
Absorption-type single-pole eight-throw switch Download PDFInfo
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- CN203775175U CN203775175U CN201420096835.7U CN201420096835U CN203775175U CN 203775175 U CN203775175 U CN 203775175U CN 201420096835 U CN201420096835 U CN 201420096835U CN 203775175 U CN203775175 U CN 203775175U
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Abstract
The utility model provides an absorption-type single-pole eight-throw switch. The problem that the output end of a conventional absorption-type single-pole eight-throw switch is large in reflection coefficient in an isolation state and large in consumption in a conductive state is solved. The switch comprises a public input end and eight symmetrically-arranged branches, and is composed of a metal base board, micro-strip substrates, and a PIN beam-type diode, a first PIN diode core, a second PIN diode core,, a third PIN diode core, an absorbing resistor and a blocking capacitor which are arranged in interval on each branch, wherein each PIN beam-type diode is in series connection with the public input end; each blocking capacitor is in series connection with the output end; each third PIN diode core is in series connection with the absorbing resistor and then is connected to the ground, and is also in parallel connected with the first PIN diode core and the second PIN diode core between the negative pole of the PIN beam-type diode and the blocking capacitor; the metal base board is provided with grooves at positions corresponding to the third PIN diode cores, and the absorbing resistors are disposed inside the grooves. The switch provided by the utility model has the advantages of small standing-wave ratio of the output end and wide band width at the isolating state and advantages of small consumption and small input/output standing-wave ratios at the conductive state.
Description
Technical field
The utility model belongs to electronic technology field, is specifically related to a kind of absorption hilted broadsword eight throw switches.
Background technology
Single pole multiple throw has monolithic integrated (MMIC) and mixes integrated two kinds of technique production methods.Single chip integrated chip switching circuit has advantages of that on-state losses is little, it is wide to be with, but isolation is little, power capacity is little; Mix integrated switching circuit and have advantages of that isolation is high, power capacity is large, but on-state losses is larger, band-limited shortcoming.
In the systems such as radar and communication, often need the single pole multiple throw circuit that isolation is high, power capacity is larger, and along with the development of radar, communication system, more and more harsher to the stability of system, reliability requirement.Under isolation, output reflected signal is large, will have a strong impact on systematic function, and absorption switch is under isolation, has the feature that output reflection coefficient is little system designer is had to attraction consumingly.
Switching circuit can be divided into reflective and absorption two kinds of structures principle.Reflective switch has the advantages that on-state losses is little, broader bandwidth, but under isolation, output has the shortcoming that reflection coefficient is large; And absorption switch output under isolation has the advantages that reflection coefficient is little, but under conducting state, more bigger than the loss of reflective switch conducting state, and bandwidth is also limited, especially along with operating frequency improves, single pole multiple throw is thrown number and is increased, and its deterioration degree is larger.But absorption switch each branch road output reflection coefficient under isolation is little, energy effective guarantee microwave system stability, improves system reliability, is that reflective switch cannot substitute in many cases.
Absorption hilted broadsword eight throw switch circuit theories as shown in Figure 1, input (common port) J0 symmetry be divided into eight strings-and branch road, every branch road all adopts a series connection PIN beam type diode D1 and 3 PIN diode core D2 in parallel, D3, D4, be a string three and to ground form, after absorption resistance R connect with PIN diode core D4 in parallel, directly arrive; Input (common port) inductance L 1 ground connection, form DC loop with the low pass filter (shunt capacitance C2 ground connection, series inductance L2) of each line feed, and C1 is capacitance.According to the working mechanism of PIN diode, when a certain branch road biasing B is zero partially or during negative bias, this branch road is conducting state, and now D1 is equivalent to resistance, and D2, D3, D4 are equivalent to electric capacity, equivalent electric circuit as shown in Figure 2, and other 7 branch roads biasing B are all in just on the lower side, each branch road is all isolation, and D1 is equivalent to electric capacity, D2, D3, D4 are equivalent to resistance, and equivalent electric circuit as shown in Figure 3.The effect of uptake zone is the reflected signal that absorbs isolation branch road, thereby guarantee that switch is under isolation, each output port all has good stationary wave characteristic, but absorption resistance will bring certain deterioration to the loss of circuit turn-on state, high-end (2～20GHz) of special microwave frequency, its loss meeting worsens larger, especially in absorption hilted broadsword multithrow switch circuit, throw number more, frequency is higher, and its loss worsens just larger.
The size of reflected signal represents with return loss L, reflectioncoefficientг or standing-wave ratio ρ conventionally, and relation between them is converted by two formula below:
Return loss L and reflectioncoefficientг relation: L (dB)=20lg| Γ |
Relation between reflectioncoefficientг and standing-wave ratio ρ:
ρ>=1 wherein, 0≤| Γ |≤1.
The absorption hilted broadsword eight throw switch structural representations of tradition as shown in Figure 4, the electronic circuit that the PIN diode core D4 of uptake zone is connected with absorption resistance R is directly installed on the substrate surface of microstrip circuit, after being connected in parallel on together diode core D3, the resistance other end is by micro-band plated-through hole ground connection on substrate again.This structural manufacturing process is simple, easy for installation, reflected signal is partially absorbed under isolation, but this structure is only applicable in microwave low-frequency channel, along with the raising of operating frequency, be arranged on the physical dimension of absorption resistance on microstrip substrate surface and the impact that parasitic parameter brings and can not ignore, cause switch under conducting state, loss increases, and input, output standing-wave ratio are also larger; Under isolation, the bandwidth of output match circuit also reduces.Therefore, the design optimization of absorption hilted broadsword eight throw switches is become to our research emphasis.
Utility model content
The purpose of this utility model is to provide a kind of absorption hilted broadsword eight throw switches, and to solve, output reflection coefficient under existing absorption hilted broadsword eight throw switch isolations is large, also larger problem of the large and input of loss, output standing-wave ratio under conducting state.Under these absorption hilted broadsword eight throw switch isolations, there is output standing-wave ratio little, the feature of broader bandwidth, and under conducting state, also there is loss little, input, the advantage that output standing-wave ratio is little.
The technical solution of the utility model is:
A kind of absorption hilted broadsword eight throw switches, comprise public input and symmetrical eight branch roads, each route metal base plate, be arranged at microstrip substrate and spaced PIN beam type diode D1 on metal base plate, the first PIN diode core D2, the second PIN diode core D3, the 3rd PIN diode core D4, absorption resistance R, capacitance C1 forms, wherein PIN beam type diode D1 is arranged on the microstrip line of microstrip substrate and is connected in series public input, capacitance C1 is arranged at and on microstrip line, is connected in series output, after the 3rd PIN diode core D4 serial connection absorption resistance with the first PIN diode core D2, the second PIN diode core D3 is separately positioned on metal base plate and is connected between PIN beam type diode D1 negative pole and capacitance, it is characterized in that, described metal base plate offers groove in the 3rd PIN diode core D4 relevant position, and described absorption resistance is arranged in groove.
Preferably, the performance parameter Cj=0.022pf of described PIN beam type diode D1, Rf=4.9 Ω; The performance parameter of described the first PIN diode D2, the second core PIN diode D3, the 3rd PIN diode D4 is Cj=0.05pf, Rf=2.5 Ω; Described absorption resistance is two 100 Europe Chip-Rs formations in parallel; Described groove is diameter 0.86mm, deeply dielectric constant 2.22, the thickness 0.127mm of microstrip substrate described in the circular recess of 1mm.
Absorption hilted broadsword eight throw switches that the utility model provides not only, under isolation, have output standing-wave ratio little, and the wider feature of relative bandwidth, and under conducting state, also have loss little, input, the advantage that output standing-wave ratio is little; In addition, this construction of switch is simple, compact, low cost of manufacture.Simultaneously, the utility model provide the absorption structure of embedding be not only applicable to absorption-type single monopole single throw switch more than operating frequency 2GHz, absorption hilted broadsword multithrow switch, control circuits such as absorptive attenuator, absorption modulator and absorption amplitude limiter more than applicable operating frequency 2GHz also.
Accompanying drawing explanation
Fig. 1 is absorption hilted broadsword eight throw switch circuit theory diagrams.
Fig. 2 is absorption hilted broadsword eight throw switch conducting branch road equivalent electric circuits.
Fig. 3 is absorption hilted broadsword eight throw switch isolation branch road equivalent electric circuits.
Fig. 4 is traditional absorption hilted broadsword eight throw switch branch structure schematic diagrames.
Fig. 5 is the absorption hilted broadsword eight throw switch structural representations of the utility model.
Fig. 6 is absorption each branch structure schematic top plan view of hilted broadsword eight throw switches of the utility model.
Fig. 7 is absorption each branch structure cross-sectional schematic of hilted broadsword eight throw switches of the utility model.
Fig. 8 is S parameter testing figure under absorption hilted broadsword eight throw switch circuit turn-on states in the utility model embodiment.
Fig. 9 is S parameter testing figure under absorption hilted broadsword eight throw switch circuit isolations in the utility model embodiment.
Embodiment
Below in conjunction with specific embodiment and Figure of description, the utility model is further explained.
A kind of absorption hilted broadsword eight throw switches, its structure is as shown in Fig. 5,6,7, comprise public input and symmetrical eight branch roads, whole switch by metal base plate, be arranged at spaced PIN beam type diode D1, the first PIN diode core D2, the second PIN diode core D3, the 3rd PIN diode core D4, absorption resistance R, capacitance C1 on microstrip substrate on metal base plate and each branch road and form.
Wherein PIN beam type diode D1 is arranged on the microstrip line of microstrip substrate, is connected conducting with microstrip line, is serially connected with between public input and each branch road; Capacitance C1 is arranged on microstrip line, be serially connected with output, the first PIN diode core D2, the second PIN diode core D3 are successively set on metal base plate, microstrip substrate is preset respective openings, each tube core positive pole is connected conducting by gold ribbon with microstrip line, make the first PIN diode core D2, the second PIN diode core D3 be connected to PIN beam type diode D1 negative pole between capacitance C1, the first PIN diode core D2, the second PIN diode core D3 negative pole be ground connection respectively; Ground connection after the 3rd PIN diode core D4 connects with absorption resistance, then is connected to PIN beam type diode D1 negative pole between capacitance C1, is arranged on metal base plate in pre-groove.Bias current B is fed between the positive pole of the 3rd PIN diode core D4 and capacitance C1 upper after low pass filter (shunt capacitance C2 ground connection, series inductance L2), and inductance L 1 is serially connected between common port and ground, for bias current provides DC loop.
The performance parameter Cj=0.022pf of the beam type of PIN described in the present embodiment diode D1, Rf=4.9 Ω;
The performance parameter of described the first PIN diode D2, the second core PIN diode D3, the 3rd PIN diode D4 is Cj=0.05pf, Rf=2.5 Ω;
Described absorption resistance adopts 0402 Chip-R, is two 100 Europe Chip-Rs formations in parallel;
Described microstrip substrate adopts the Duroid5880 material of ROGERS CORPORATION, its dielectric constant 2.22, thickness 0.127mm;
Described groove is diameter 0.86mm, the circular recess of dark 1mm.
Absorption hilted broadsword eight throw switches in the present embodiment are tested, its test curve as shown in Figure 8,9, specific targets: within the scope of 15～18GHz, under conducting state, Insertion Loss is less than 3.8dB, and output return loss is greater than 10dB; Under isolation, isolation is greater than 65dB, and output return loss is greater than 15dB, and input return loss is greater than 12dB.
Absorption hilted broadsword eight throw switches that the utility model provides not only, under isolation, have input, output standing-wave ratio is little, and the wider feature of relative bandwidth, and under conducting state, also have loss little, the advantage that output standing-wave ratio is little; In addition, this construction of switch is simple, compact, low cost of manufacture.
Claims (6)
1. absorption hilted broadsword eight throw switches, comprise public input and symmetrical eight branch roads, each route metal base plate, be arranged at microstrip substrate and spaced PIN beam type diode (D1) on metal base plate, the first PIN diode core (D2), the second PIN diode core (D3), the 3rd PIN diode core (D4), absorption resistance (R), capacitance (C1) forms, wherein PIN beam type diode (D1) is arranged on the microstrip line of microstrip substrate, be serially connected between public input and each branch road, capacitance (C1) is arranged at and on microstrip line, is connected in series output, after the 3rd PIN diode core (D4) serial connection absorption resistance with the first PIN diode core (D2), the second PIN diode core (D3) is separately positioned on metal base plate and is connected between PIN beam type diode (D1) negative pole and capacitance, it is characterized in that, described metal base plate offers groove in the 3rd PIN diode core (D4) relevant position, and described absorption resistance is arranged in groove.
2. by a kind of absorption hilted broadsword eight throw switches described in claim 1, it is characterized in that, the performance parameter of described PIN beam type diode (D1) is Cj=0.022pf, Rf=4.9 Ω.
3. by a kind of absorption hilted broadsword eight throw switches described in claim 1, it is characterized in that, the performance parameter of described the first PIN diode (D2), the second core PIN diode (D3), the 3rd PIN diode (D4) is Cj=0.05pf, Rf=2.5 Ω.
4. by a kind of absorption hilted broadsword eight throw switches described in claim 1, it is characterized in that, described absorption resistance is two 100 Europe Chip-Rs formations in parallel.
5. by a kind of absorption hilted broadsword eight throw switches described in claim 1, it is characterized in that, described groove is diameter 0.86mm, the circular recess of dark 1mm.
6. by a kind of absorption hilted broadsword eight throw switches described in claim 1, it is characterized in that, the dielectric constant of described microstrip substrate is 2.22, thickness is 0.127mm.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201420096835.7U CN203775175U (en) | 2014-03-04 | 2014-03-04 | Absorption-type single-pole eight-throw switch |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201420096835.7U CN203775175U (en) | 2014-03-04 | 2014-03-04 | Absorption-type single-pole eight-throw switch |
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| CN203775175U true CN203775175U (en) | 2014-08-13 |
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| CN201420096835.7U Expired - Fee Related CN203775175U (en) | 2014-03-04 | 2014-03-04 | Absorption-type single-pole eight-throw switch |
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Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN103873039A (en) * | 2014-03-04 | 2014-06-18 | 电子科技大学 | Adsorption-type single-pole eight-throw switch |
| US9577631B2 (en) | 2015-02-13 | 2017-02-21 | Richwave Technology Corp. | Single pole multi-throw switch |
| US10340704B2 (en) | 2015-02-13 | 2019-07-02 | Richwave Technology Corp. | Switch device with a wide bandwidth |
-
2014
- 2014-03-04 CN CN201420096835.7U patent/CN203775175U/en not_active Expired - Fee Related
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN103873039A (en) * | 2014-03-04 | 2014-06-18 | 电子科技大学 | Adsorption-type single-pole eight-throw switch |
| US9577631B2 (en) | 2015-02-13 | 2017-02-21 | Richwave Technology Corp. | Single pole multi-throw switch |
| US10340704B2 (en) | 2015-02-13 | 2019-07-02 | Richwave Technology Corp. | Switch device with a wide bandwidth |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| C14 | Grant of patent or utility model | ||
| GR01 | Patent grant | ||
| CF01 | Termination of patent right due to non-payment of annual fee | ||
| CF01 | Termination of patent right due to non-payment of annual fee |
Granted publication date: 20140813 Termination date: 20170304 |