CN203760443U - Etching process-used bearing disc of patterned sapphire substrate - Google Patents

Etching process-used bearing disc of patterned sapphire substrate Download PDF

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Publication number
CN203760443U
CN203760443U CN201420045829.9U CN201420045829U CN203760443U CN 203760443 U CN203760443 U CN 203760443U CN 201420045829 U CN201420045829 U CN 201420045829U CN 203760443 U CN203760443 U CN 203760443U
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CN
China
Prior art keywords
carrier
pallet
wafer
socket
sapphire substrate
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Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
CN201420045829.9U
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Chinese (zh)
Inventor
王志嘉
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Individual
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Individual
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Publication date
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Priority to CN201420045829.9U priority Critical patent/CN203760443U/en
Application granted granted Critical
Publication of CN203760443U publication Critical patent/CN203760443U/en
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

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Abstract

The utility model provides an etching process-used bearing disc of a patterned sapphire substrate. The etching process-used bearing disc comprises a bearing disc and a supporting disc; the bearing disc is made of quartz materials in an integrally molded manner; the bearing disc is provided with an upper end surface and a lower end surface; at least one accommodating opening penetrates the upper end surface and the lower end surface; the upper end surface of the bearing disc is provided with a plurality of contact points which protrude to the center of the accommodating opening; the supporting disc is made of aluminum alloy materials; the supporting disc is discoid; a combination portion is formed at the outer periphery of the supporting disc; the supporting disc is assembled at the accommodating opening of the bearing disc through the combination portion; an air guide hole is formed at the center of the supporting disc in a penetrating manner; the supporting disc is provided with a flat surface which faces the upper end surface of the bearing disc; the supporting disc is further provided with a recessed groove which is located at the periphery of the flat surface; and the groove is provided with a sealing washer which extends out from the flat surface. According to the etching process-used bearing disc of the patterned sapphire substrate of the utility model, a wafer can be clamped and fixed through the sealing washer of the supporting disc and the contact points of the bearing disc, and therefore, usable area of the wafer can be improved.

Description

The etch process carrier of patterning sapphire substrate
Technical field
The utility model has about a kind of wafer bearing structure, espespecially a kind of etch process carrier of the patterning sapphire substrate that can promote silicon wafer process quality.
Background technology
Known a kind of wafer carrying structure, as Fig. 9, shown in 10, it mainly includes a carrier 40 and a pallet 50, this carrier 40 offers a filling mouth 41, and inside contract a ring 42 in loading mouthful 41 opening peripheries, after wafer 60 being packed into load mouthfuls 41, can contact at this ring 42 and form spacing, this pallet 50 is one discoid again, and in simultaneously locating indent is formed with a concave face 51, and offer a pore 52 in the centre of concave face 51, utilize pallet 50 to be installed in and load mouth 41, allow and contact at wafer 60 outer rims to concave face 51 outer rims of dish 50, can form the sandwiched of wafer 60 is fixed by ring 42 and concave face 51, make wafer 60 back sides import passivity gas with pore 52, carry out the temperature control of wafer 60, carry out etch process in wafer 60 fronts simultaneously, can obtain wafer 60 finished products as shown in figure 11, but see in detail above-mentioned conventional construction and be not difficult to realize that it has remained a little weak point, main cause is returned as follows: one, the ring 42 of the positive contact carrier 40 of this wafer 60, in processing procedure process, can be formed with in ring 42 hidden position places the invalid vestige 61 of a circle, therefore the invalid vestige 61 of this round will reduce the usable area of wafer 60, two, this wafer 60 is to form sandwiched by the ring 42 of carrier 40 with the concave face 51 of pallet 50 to fix, and this carrier 40 is all hard brittle material with pallet 50, hereat cannot closely form the fixing of wafer 60, cause wafer 60 easily in processing or move and produce displacement in process, make wafer in processing procedure, produce the defect 62 of outward appearance breakage, make it produce yield and reduce, three, this pallet 50 is formed with concave face 51 in one side, and prop up wafer 60 by concave face 51, allow wafer 60 another sides be resisted against ring 42 places of carrier 40, because carrier 40 and pallet 50 are all hard brittle material, cannot effectively form airtight and pressurize, because the spacing between concave face 51 and wafer 60 differs, passivity gas cannot be distributed in wherein uniformly especially, cannot reach the homogeneity of cooling capacity.
Utility model content
Technical problem to be solved in the utility model is the above-mentioned disappearance existing for prior art, and a kind of etch process carrier of patterning sapphire substrate is provided.
The first main purpose of the present utility model is, this carrier is one-body molded in socket place a plurality of contact points, allows wafer only contact at this contacting points position, improves effective usable floor area of wafer with this.
The second main purpose of the present utility model is, this pallet is squeezed in wafer rear with seal washer elasticity, make wafer can stablize the contact point that contacts at carrier, and then prevent that wafer from producing slippage situation, and the defect of outward appearance breakage occurs in processing procedure to eliminate wafer.
The 3rd main purpose of the present utility model is, the seal washer of this pallet protrudes burnishing surface a suitable distance, and this pallet contacts wafer with seal washer, allow and between wafer, seal washer and burnishing surface, have a samming space, and form effectively airtight by the flexible seal washer of tool, make samming space there is pressurize effect, make the each position of wafer all there is identical cooling rate, guarantee that its cooling procedure can reach homogeneity.
The 4th main purpose of the present utility model is, this carrier is one-body molded a socket, and the contact point extending to socket center, and coordinate pallet to be installed in socket and form fixing to wafer, there is easy processing and the effect reducing costs with this.
The 5th main purpose of the present utility model is, this carrier offers annular groove in socket place, and this pallet is equiped with limiting gasket in joint portion, be located between annular groove and groove by limiting gasket elastic clip, make pallet can directly push the socket that is installed in carrier, can not only reduce manually-operated fault rate, there is especially the practical effect of rapid-assembling.
In order to solve the problems of the technologies described above, the utility model provides a kind of etch process carrier of patterning sapphire substrate, and it includes:
One carrier, this carrier is one-body molded by quartzy material, and this carrier has a upper surface and a lower surface, this upper and lower end face is penetrated with at least one socket again, and this carrier convexes with a plurality of contact points in upper surface to socket center; And
One pallet, this pallet is that aluminum alloy material is made, this pallet is in the form of annular discs and be formed with a joint portion in pallet outer peripheral edges, this pallet is mounted on the socket place of this carrier with joint portion again, and the centre of this pallet is penetrated with a gas port, another this pallet is formed with a burnishing surface towards the upper surface of carrier, and be concaved with a groove in the peripheral region of burnishing surface, and this groove place is equiped with the seal washer of a protrusion burnishing surface, fix a wafer by the seal washer of pallet and the contact point sandwiched of carrier.
Further, wherein, the contact point of this carrier is three, and respectively between this contact point, is all formed with the angle of 120 degree.
Further, wherein, the contact point of this carrier is four, and respectively between this contact point, is all formed with the angle of 90 degree.
Further, wherein, this carrier is formed with an annular groove in the internal face place of socket, and this pallet is provided with a groove in the form of a ring in joint portion place again, and is equiped with a limiting gasket in groove, and this pallet is arranged in the annular groove place of carrier with limiting gasket.
Further, wherein, this carrier is formed with the inclined-plane of an outer expanding shape in socket and junction, lower surface, by inclined-plane by pallet correcting.
Further, wherein, the socket of this carrier and the seal washer of pallet are all formed with a truncation portion, supply Wafer alignment by truncation portion.
The utility model improves a kind of effective usable floor area of wafer, prevent the generation that wafer produces slippage situation, eliminate the defect that outward appearance breakage occurs wafer in processing procedure, and effect of cost has easily been processed, reduced to the utility model, can not only reduce manually-operated fault rate, there is especially the practical effect of rapid-assembling.
Brief description of the drawings
Fig. 1 is stereogram of the present utility model.
Fig. 2 is three-dimensional exploded view of the present utility model.
Fig. 3 is cutaway view of the present utility model.
Fig. 4 is use view one of the present utility model.
Fig. 5 is use view two of the present utility model.
Fig. 6 is use view three of the present utility model.
Fig. 7 is wafer finished product schematic diagram of the present utility model.
Fig. 8 is the schematic diagram of concrete enforcement state of the present utility model.
Fig. 9 is the stereogram of known wafer carrying structure.
Figure 10 is the cutaway view of known wafer carrying structure.
Figure 11 is known wafer finished product schematic diagram.
In figure, carrier----10
Upper surface----11
Lower surface----12
Socket----13
Inclined-plane-----131
Annular groove-----132
Contact point----14
Pallet-----20
Joint portion----21
Groove-----211
Limiting gasket---22
Gas port----23
Burnishing surface----24
Groove-----241
Seal washer---25
Truncation portion----133 (251)
Wafer-----30
Invalid vestige---31
Samming space---A
Carrier----40
Load mouth----41
Ring-----42
Pallet-----50
Concave face----51
Pore-----52
Wafer-----60
Invalid vestige---61
Defect-----62.
Embodiment
Below in conjunction with the drawings and specific embodiments, the utility model is described in further detail, so that those skilled in the art can better understand the utility model being implemented, but illustrated embodiment is not as to restriction of the present utility model.
First please shown in Fig. 1 and Fig. 2, see it, a kind of etch process carrier of patterning sapphire substrate, it includes: a carrier 10 and a pallet 20, one carrier 10 by quartzy material one-body molded, this carrier 10 has a 11Yu Yi lower surface, upper surface 12, and this runs through on this, lower surface 11, 12 have at least one socket 13, this carrier 10 convexes with a plurality of contact points 14 in upper surface 11 to socket 13 centers again, and the contact point 14 of this carrier 10 can be three, and between contact point 14, be all formed with the angle of 120 degree, or, the contact point 14 of this carrier 10 is four, and between this contact point 14, be all formed with the angle of 90 degree, this carrier 10 is formed with the inclined-plane 131 of an outer expanding shape in socket 13 and 12 junctions, lower surface again, the convenience of pallet 20 correctings being assembled with raising by inclined-plane 131, another this carrier 10 is formed with an annular groove 132 in the internal face place of socket 13, one pallet 20 is that aluminum alloy material is made, this pallet 20 is in the form of annular discs and be formed with a joint portion 21 in outer peripheral edges, and this pallet 20 is mounted on socket 13 places of carrier 10 with joint portion 21, this pallet 20 is provided with a groove 211 in the form of a ring in 21 places, joint portion again, and be equiped with a limiting gasket 22 in groove 211 places, make this pallet 20 be arranged in annular groove 132 places of carrier 10 with limiting gasket 22, form stable rapid-assembling with this, the centre of this pallet 20 is penetrated with a gas port 23, utilize gas port 23 to carry out the circulation of passivity gas, and this pallet 20 is formed with a burnishing surface 24 towards the upper surface 11 of carrier 10, and be concaved with a groove 241 in the peripheral region of burnishing surface 24, and these groove 241 places are equiped with the seal washer 25 of a protrusion burnishing surface 24, form the sandwiched of wafer 30 is fixed to (coordinating shown in Fig. 6) by the seal washer 25 of pallet 20 and the contact point 14 of carrier 10, and then the usable area of raising wafer 30, the socket 13 of this carrier 10 is all formed with a truncation portion 133 (251) with the seal washer 25 of pallet 20 again, the contraposition of wafer 30 is provided by truncation portion 133 (251), and then provide wafer 30 to carry in order to carrying out etch process.
The situation of its actual use, again please by Fig. 4, 5, shown in 6 cooperation Fig. 2, see it, this wafer 30 is inserted in socket 13 by the lower surface 12 of carrier 10, make wafer 30 outer peripheral edges contact at the contact point 14 of carrier 10, be the contacting of 14 areas of only having point of contact between carrier 10 and wafer 30, can effectively reduce covering wafer 30 areas, insert after socket 13 in wafer 30, again pallet 20 is inserted to the socket 13 of carrier 10 by lower surface 12, now this pallet 20 is towards wafer 30 with burnishing surface 24, and slip in socket 13 along the inclined-plane 131 of carrier 10, the groove 211 of this pallet 20 is equiped with limiting gasket 22 again, can be located between groove 211 and annular groove 132 by limiting gasket 22, pallet 20 and carrier 10 are formed urgent fixing, on the other hand, the seal washer 25 that is installed in pallet 20 grooves 241 forms elasticity extruding towards the upper surface 11 of carrier 10, wafer 30 can be located between contact point 14 and seal washer 25, can there is not the situation of wafer 30 displacements, with this stable placement wafer 30 between carrier 10 and pallet 20, in processing procedure, there is the defect of outward appearance breakage to eliminate wafer 30, the burnishing surface 24 that sealing packing ring 25 protrudes pallet 20 again has a suitable height, and wafer 30 back sides only contact at seal washer 25, to make wafer 30, between seal washer 25 and burnishing surface 24, have a samming space A, and form effectively airtight by the flexible seal washer 25 of tool, make samming space A there is pressurize effect, in processing procedure process, this passivity gas (as helium) can be flowed in the A of samming space by the gas port of pallet 20 23, and be distributed in uniformly in the A of samming space, make the each position of wafer 30 all there is identical cooling rate, guarantee that its cooling procedure can reach homogeneity, coordinate again shown in Fig. 7, when carrying out after etch process, because only having the contact point 14 of small area carried dish 10, wafer 30 covers, therefore only can form the invalid vestige 31 of several points on wafer 30 surfaces, in order to do the usable area to improve wafer 30.
Concrete performance of the present utility model; please see as shown in Figure 8 again it; in fact this carrier 10 can be equiped with a plurality of wafers 30 simultaneously and carries out etch process; be not limited to the use form of single group of wafer 30; not with single group of wafer 30 embodiment of above-mentioned exposure, category of the present utility model is limited, make its protection category contain the concrete enforcement of all number change.
The structure of above-mentioned specific embodiment, can obtain following benefit: one, this carrier 10 is one-body molded in socket 13 places a plurality of contact points 14, allows 30 of wafers contact at this contact point 14 positions, improves effective usable floor area of wafer 30 with this; Two, this pallet 20 is squeezed in wafer 30 back sides with seal washer 25 elasticity, makes wafer 30 can stablize the contact point 14 that contacts at carrier 10, and then prevents that wafer 30 from producing slippage situation, in order to do the defect that outward appearance breakage occurs in processing procedure to eliminate wafer 30; Three, the seal washer 25 of this pallet 20 protrudes burnishing surface 24 a suitable distance, and this pallet 20 contacts wafer 30 with seal washer 25, allow and between wafer 30, seal washer 25 and burnishing surface 24, have a samming space A, and form effectively airtight by the flexible seal washer 25 of tool, make samming space A there is pressurize effect, make the each position of wafer 30 all there is identical cooling rate, guarantee that its cooling procedure can reach homogeneity; Four, this carrier 10 is one-body molded a socket 13, and the contact point 14 extending to socket 13 centers, and coordinates pallet 20 to be installed in socket 13 and form fixing to wafer 30, has easy processing and the effect reducing costs with this; Five, this carrier 10 offers annular groove 132 in socket 13 places, and this pallet 20 is equiped with limiting gasket 22 in joint portion 21, be located between annular groove 132 and groove 211 by limiting gasket 22 elastic clips, make pallet 20 can directly push the socket 13 that is installed in carrier 10, can not only reduce manually-operated fault rate, there is especially the practical effect of rapid-assembling.
The above embodiment is only the preferred embodiment for absolutely proving that the utility model is lifted, and protection range of the present utility model is not limited to this.What those skilled in the art did on the utility model basis is equal to alternative or conversion, all within protection range of the present utility model.Protection range of the present utility model is as the criterion with claims.

Claims (6)

1. an etch process carrier for patterning sapphire substrate, is characterized in that, it includes:
One carrier, this carrier is one-body molded by quartzy material, and this carrier has a upper surface and a lower surface, this upper and lower end face is penetrated with at least one socket again, and this carrier convexes with a plurality of contact points in upper surface to socket center; And
One pallet, this pallet is that aluminum alloy material is made, this pallet is in the form of annular discs and be formed with a joint portion in pallet outer peripheral edges, this pallet is mounted on the socket place of this carrier with joint portion again, and the centre of this pallet is penetrated with a gas port, another this pallet is formed with a burnishing surface towards the upper surface of carrier, and be concaved with a groove in the peripheral region of burnishing surface, and this groove place is equiped with the seal washer of a protrusion burnishing surface, fix a wafer by the seal washer of pallet and the contact point sandwiched of carrier.
2. the etch process carrier of patterning sapphire substrate according to claim 1, is characterized in that, wherein, the contact point of this carrier is three, and respectively between this contact point, is all formed with the angle of 120 degree.
3. the etch process carrier of patterning sapphire substrate according to claim 1, is characterized in that, wherein, the contact point of this carrier is four, and respectively between this contact point, is all formed with the angle of 90 degree.
4. the etch process carrier of patterning sapphire substrate according to claim 1, it is characterized in that, wherein, this carrier is formed with an annular groove in the internal face place of socket, this pallet is provided with a groove in the form of a ring in joint portion place again, and be equiped with a limiting gasket in groove, and this pallet is arranged in the annular groove place of carrier with limiting gasket.
5. the etch process carrier of patterning sapphire substrate according to claim 1, is characterized in that, wherein, this carrier is formed with the inclined-plane of an outer expanding shape in socket and junction, lower surface, by inclined-plane by pallet correcting.
6. the etch process carrier of patterning sapphire substrate according to claim 1, is characterized in that, wherein, the socket of this carrier and the seal washer of pallet are all formed with a truncation portion, supplies Wafer alignment by truncation portion.
CN201420045829.9U 2014-01-24 2014-01-24 Etching process-used bearing disc of patterned sapphire substrate Expired - Fee Related CN203760443U (en)

Priority Applications (1)

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Application Number Priority Date Filing Date Title
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Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN106935536A (en) * 2015-12-24 2017-07-07 株式会社迪思科 Chip collecting pallet
WO2023004879A1 (en) * 2021-07-30 2023-02-02 逸美德科技股份有限公司 Leveling method and apparatus for flexible product

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN106935536A (en) * 2015-12-24 2017-07-07 株式会社迪思科 Chip collecting pallet
CN106935536B (en) * 2015-12-24 2022-02-18 株式会社迪思科 Chip storage tray
WO2023004879A1 (en) * 2021-07-30 2023-02-02 逸美德科技股份有限公司 Leveling method and apparatus for flexible product

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Date Code Title Description
C14 Grant of patent or utility model
GR01 Patent grant
CF01 Termination of patent right due to non-payment of annual fee

Granted publication date: 20140806

Termination date: 20170124

CF01 Termination of patent right due to non-payment of annual fee