CN104201135A - Wet etching device and use method thereof - Google Patents
Wet etching device and use method thereof Download PDFInfo
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- CN104201135A CN104201135A CN201410432543.0A CN201410432543A CN104201135A CN 104201135 A CN104201135 A CN 104201135A CN 201410432543 A CN201410432543 A CN 201410432543A CN 104201135 A CN104201135 A CN 104201135A
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67017—Apparatus for fluid treatment
- H01L21/67063—Apparatus for fluid treatment for etching
- H01L21/67075—Apparatus for fluid treatment for etching for wet etching
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
- H01L21/6838—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping with gripping and holding devices using a vacuum; Bernoulli devices
Abstract
The invention provides a wet etching device. The wet etching device comprises a base, a substrate and a vacuum generation device, wherein airflow channels communicated with the vacuum generation device are formed in the base, grooves are formed in the substrate, through holes communicated and in one-to-one correspondence with the airflow channels are formed in the bottoms of the grooves, and arc-shaped slope surfaces fitted with the arc-shaped area of the edge of a wafer are arranged on the edges of the bottoms of the grooves. The wet etching device is capable of realizing etching for the back surface of the whole wafer, capable of enabling the front surface of the wafer to be closely bonded with the substrate, preventing an etching liquid from permeating in the front surface of the wafer, and effectively protecting the front surface of the wafer from contacting with the etching liquid, simple in structure, convenient to operate, low in manufacturing cost, and capable of being repeatedly used, thus greatly reducing the production cost.
Description
Technical field
The invention belongs to semiconductor manufacturing equipment field, relate to a kind of wet etch processor and using method thereof.
Background technology
In the technical process of semiconductor integrated circuit and MEMS (micro electro mechanical system) (MEMS) manufacture, wet corrosion technique is a kind of technology mode of removing material always, is widely used.Along with the development of integrated circuit and micro electronmechanical (MEMS) manufacturing process, traditional mode of only processing at wafer one side can not satisfy the demands.During particularly MEMS technique is manufactured; the two sides of wafer all needs processing; the condition of wafer two sides technique is conventionally not identical; when to wafer when chemical corrosion or electrochemical corrosion are carried out in the back side of corroding; and the graphic structure in the protected front of wafer can not be corroded; must protect, thereby occur the technology of wafer single-sided corrosion protection.
In existing wafer single-sided corrosion technology; generally will make wafer soak for a long time in 80 ℃, potassium hydroxide (KOH) solution of severe corrosive or TMAH (Tetramethylammonium Hydroxide Tetramethylammonium hydroxide) solution, in corrosion process, the general following methods that adopts comes the front of wafer to form protection:
1) wafer one side is protected with corrosion clamp.But corrosion clamp need to be pressed on the back side of wafer with sealing ring, can make the back side that sealed circle is pushed down to be corroded, can not realize the corrosion of whole wafer rear; Meanwhile, corrosion clamp needs the wafer of corresponding specific thicknesses, need to adopt the corrosion clamp of different model according to the wafer of different-thickness, more loaded down with trivial details; Therefore, the method has been subject to certain restriction in actual applications.
2) in wafer frontside, apply one deck protective finish, to form the protection to wafer frontside, as shown in Figure 1.As shown in Figure 1, described protective finish 13 covers described wafer 11 fronts completely, but in some technique; described wafer 11 has groove 12; therefore,, while using the method to protect the front of described wafer 11, the described protective finish 13 of coating easily enters in groove 12.And after described wafer 11 back sides etch; also need to remove positive described protective finish 13; if described protective finish 13 enters in described groove 12; probably as shown in Figure 2; after removing the described protective finish 13 in described wafer 11 fronts; also in described groove 12, leave the residual remaining described protective finish 13 of part, and then in follow-up trench fill technique, make to fill and insufficiently even cannot fill, thereby affect the performance of device.
Further; restriction due to technique; the Thickness Ratio of general coated protective finish is more limited; the thickness of bottom, hole or side wall protective layer is restricted; cannot provide long protection, when wafer is corroded, if the protective finish of groove opening top closure is corroded out; corrosive liquid or gas will enter in described groove, thereby easily the groove of wafer are caused to damage.Meanwhile, in prior art, generally use
as protective finish, but
price relatively expensive, and if protected face while having higher step,
just fine protective effect can not have been played.
Summary of the invention
The shortcoming of prior art in view of the above, the object of the present invention is to provide a kind of wet etch processor and using method thereof, when being used for solving prior art wafer being carried out to single-sided corrosion, use corrosion clamp the protected face of wafer to be protected or in the problem that can not corrode the whole face of being corroded of wafer that protected of wafer is armor coated to be existed when the protected face of wafer is protected, the corrosion protection layer using easily enters in the groove of wafer, thereby affect the problem of the performance of device, and the protective layer using is more expensive, increase the problem of production cost.
For achieving the above object and other relevant objects, the invention provides a kind of wet etch processor, be suitable for wafer to carry out single-sided corrosion, described wafer has the back side to be corroded and the front needing protection, and described wet etch processor comprises: pedestal, liner and vacuum generating device; In described pedestal, be provided with vertically the first gas channel, described the first gas channel is communicated with the upper surface of described pedestal; Described the first gas channel is connected with described vacuum generating device; Described liner is positioned at the upper surface of described pedestal, in described liner, is provided with groove, and the diameter of described bottom portion of groove is more than or equal to described brilliant diameter of a circle; Described bottom portion of groove is provided with via regions, and the diameter of described via regions is less than described brilliant diameter of a circle; In described via regions, be provided with the through hole being connected with described the first gas channel, described through hole is corresponding up and down with described the first gas channel.
Preferably, described pedestal comprises the first subbase seat and the second subbase seat, and described the first gas channel is positioned at described the first subbase seat; In described the first subbase seat, be also provided with the cavity structure being connected with described the first gas channel; In described the second subbase seat, be provided with vertically the second gas channel, described second gas channel one end is connected with described cavity structure, and the other end is connected with described vacuum generating device.
Preferably, the fringe region of described wafer frontside is arc area, the diameter of described bottom portion of groove equals described brilliant diameter of a circle, and the fringe region of described bottom portion of groove is that arc is domatic, domatic and the described arc area of described arc matches, so that described wafer is while being positioned at described bottom portion of groove, the edge of described wafer and the edge of described bottom portion of groove fit together completely.
Preferably, described the first gas channel is distributed in described pedestal equably, and described through hole is distributed in the bottom of described groove equably.
Preferably, be positioned at described pedestal zone line and fringe region adjacent two described in the spacing of the first gas channel be less than be positioned at other regions of described pedestal adjacent two described in the spacing of the first gas channel; Be positioned at described liner zone line and fringe region adjacent two described in the spacing of through hole be less than be positioned at other regions of described liner adjacent two described in the spacing of through hole.
Preferably, the material of described pedestal is tetrafluoroethene, PP (Polypropylene, polypropylene) or Teflon.
Preferably, the material of described liner is silica gel or fluorubber.
Preferably, described liner is consistent with described the first sub-base shape, and size is identical.
Preferably, described liner cross section be shaped as circle, described the first subbase seat cross section be shaped as circle, described bottom portion of groove cross section be shaped as circle.
Preferably, the degree of depth of described groove is more than or equal to the thickness of described wafer.
Preferably, between described pedestal and described vacuum generating device, be also provided with strainer valve, be suitable for preventing that corrosive liquid from entering described vacuum generating device.
The present invention also provides a kind of using method of above-mentioned wet etch processor, comprises the following steps:
1) back side to be corroded of a wafer is placed in upward in the groove of liner of described wet etch processor, and the edge of described wafer and the edge of described groove are aligned; Open described vacuum generating device, the bottom by described wafer adsorption at described groove;
2) described absorption there are the liner of wafer and described pedestal put into etchant solution, the back side that described wafer is to be corroded is corroded;
3) after corrosion, there are the liner of wafer and described pedestal to take out from etchant solution described absorption, use wafer described in deionized water rinsing, liner and pedestal; Close described vacuum generating device, wafer is taken off from described liner.
Preferably, the etchant solution using step 2) is KOH solution or TMAH solution.
As mentioned above, wet etch processor of the present invention, has following beneficial effect:
1. the back side that wafer is to be corroded is completely exposed, can realize the corrosion to whole described wafer rear.
2. it is domatic that described in, the edge of liner groove is provided with the arc matching with described crystal round fringes arc area, the material of described liner is fluorubber or silica gel again, fluorubber and silica gel all have retractility, when the bottom of described liner groove is close in the protected front of described wafer, under the effect of vacuum generating device, can complete by the distortion of described liner the absorption of described liner to described wafer frontside, front and the described liner of whole described wafer are fitted tightly, prevent that corrosive liquid from infiltrating the front to described wafer, effectively protect the front of described wafer not contact with described corrosive liquid.
3. described in, wet etch processor is simple in structure, easy to operate, and cheap for manufacturing cost, can reuse, and greatly reduces production cost.
Accompanying drawing explanation
Fig. 1 is shown as the protected positive schematic cross-section forming after protective finish of wafer in prior art.
Fig. 2 is shown as the schematic cross-section after the protective finish of removing the protected front of wafer in prior art.
Fig. 3 is shown as the structural representation of wet etch processor of the present invention.
Fig. 4 is shown as the schematic top plan view of the liner in wet etch processor of the present invention.
Fig. 5 to 7 is shown as the local enlarged diagram of a-quadrant in Fig. 3.
Fig. 8 is shown as wet etch processor of the present invention and places the structural representation after wafer.
Fig. 9 to 11 is shown as the local enlarged diagram in B region in Fig. 8.
Element numbers explanation
11 wafers
12 grooves
13 protective finish
20 pedestals
201 first subbase seats
202 second subbase seats
21 liners
22 vacuum generating devices
23 first gas channels
24 grooves
241 via regions
242 through holes
25 cavity structures
26 second gas channels
27 strainer valves
28 wafers
29 connecting tubes
L
1the horizontal length at the domatic two ends of arc
L
2the horizontal length at arc area two ends
H
1the height that arc is domatic
H
2the height of arc area
Embodiment
Below, by specific instantiation explanation embodiments of the present invention, those skilled in the art can understand other advantages of the present invention and effect easily by the disclosed content of this specification.The present invention can also be implemented or be applied by other different embodiment, and the every details in this specification also can be based on different viewpoints and application, carries out various modifications or change not deviating under spirit of the present invention.
Refer to figure and refer to Fig. 3 to Figure 11.It should be noted that, the diagram providing in the present embodiment only illustrates basic conception of the present invention in a schematic way, though only show in graphic with assembly relevant in the present invention but not component count, shape and size drafting while implementing according to reality, during its actual enforcement, kenel, quantity and the ratio of each assembly can be a kind of random change, and its assembly layout kenel also may be more complicated.
Refer to Fig. 3 to Fig. 4, the structural representation that Fig. 3 is wet etch processor, Fig. 4 is the schematic top plan view of the liner in wet etch processor.The invention provides a kind of wet etch processor, described wet etch processor at least comprises: pedestal 20, liner 21 and vacuum generating device 22; Wherein, be provided with vertically the first gas channel 23 in described pedestal 20, described the first gas channel 23 is communicated with the upper surface of described pedestal 20; Described the first gas channel 23 is connected with described vacuum generating device 22; Described liner 21 is positioned at the upper surface of described pedestal 20, in described liner 21, is provided with groove 24, and the diameter of described groove 24 bottoms is more than or equal to described brilliant diameter of a circle; Described groove 24 bottoms are provided with via regions 241, the diameter of described via regions 241 is less than described brilliant diameter of a circle, in described via regions 241, be provided with the through hole 242 being connected with described the first gas channel 23, described through hole 242 is corresponding Shang Xia 23 with described the first gas channel.
Concrete, when wafer is corroded due to the described wet etch processor of use, need to use potassium hydroxide (KOH) solution or TMAH (the Tetramethylammonium Hydroxide Tetramethylammonium hydroxide) solution of severe corrosive, therefore, in order to prevent that described wet etch processor from being corroded by described potassium hydroxide solution or TMAH solution, what the material of described pedestal 20 and described substrate 21 all can be in the material of all resistance to potassium hydroxide solutions or TMAH solution corrosion in prior art is a kind of.Due to described pedestal 20 upper surfaces, be provided with again the needs of described liner 21 and other technological operations, described pedestal 20 should have certain hardness.Preferably, in the present embodiment, the material of described pedestal 20 is polytetrafluoroethylene, PP (Polypropylene, polypropylene) or Teflon (Polytetrafluoroethene, polytetrafluoroethylene).Preferably, in the present embodiment, the material of described substrate 21 is silica gel or fluorubber.Because silica gel and fluorubber have elasticity, under the effect of external force, can there is deformation, the material of described substrate 21 is elected as to silica gel or the fluorubber that deformation can occur, can be so that wafer while being adsorbed on the bottom of described groove 24 under the effect of described vacuum generating device 22, can complete by the distortion of described liner 21 absorption of 21 pairs of wafer frontside of described liner, make bottom laminating tightr of wafer and described groove 24.
Concrete, described pedestal 20 comprises the first subbase seat 201 and the second subbase seat 202, described the first gas channel 23 is positioned at described the first subbase seat 201, is also provided with the cavity structure 25 being connected with described the first gas channel 23 in described the first subbase seat 201; In described the second subbase seat 202, be provided with vertically the second gas channel 26, described second gas channel 26 one end are connected with described cavity structure 25, and the other end is connected with described vacuum generating device 22.Described the second gas channel 26 can be connected with described vacuum generating device 22 by a connecting tube 29.
Concrete, described the first gas channel 23 can be distributed in described pedestal 20 equably, and correspondingly, described through hole 242 can be distributed in the bottom of described groove 24 equably; Described the first gas channel 23 is all evenly distributed with described through hole 242, can make wafer stressed more even when being attracted to described groove 24 bottoms.Meanwhile, described the first gas channel 23 also can be in the interior non-uniform Distribution of described pedestal 20, and correspondingly, described through hole 242 also can be in the bottom of described groove 24 non-uniform Distribution.Preferably, in the present embodiment, be positioned at described pedestal 20 zone lines and fringe region adjacent two described in the spacing of the first gas channel 23 be less than be positioned at described pedestal 20 other regions adjacent two described in the spacing of the first gas channel 23; Be positioned at described liner 21 zone lines and fringe region adjacent two described in the spacing of through hole 242 be less than be positioned at described liner 21 other regions adjacent two described in the spacing of through hole 242.In the zone line and fringe region of described pedestal 20, described the first gas channel 23 distribute compared with intensive in other regions, in the zone line and fringe region of described liner 21, described through hole 242 distribute compared with intensive in other regions.Described the first gas channel 23 in described pedestal 20 zone lines and fringe region is distributed compared with intensive in other regions, described through hole in the zone line of described liner 21 and fringe region 242 is distributed compared with intensive in other regions, can be when wafer be attracted to described groove 24 bottom, make crystal circle center region and fringe region stressed larger, make the tightr of the edge of described wafer and 21 laminatings of described substrate, be more conducive to prevent that etchant solution from contacting the front of described wafer.
Concrete, described liner 21 is consistent with described the first subbase seat 201 shapes, and size is identical.Preferably, the shape of described liner 21 cross sections is all identical with described first shape of subbase seat 201 cross sections and the shape of described bottom portion of groove, is circle.
Concrete, between described pedestal 20 and described vacuum generating device 22, be also provided with strainer valve 27, to prevent when vacuum generating device is worked, the corrosive liquid surprisingly entering in the gas channel in pedestal 20 enters described vacuum generating device 22 and described vacuum generating device 22 is caused to corrosion damage.
Refer to Fig. 5 to Fig. 7, Fig. 5 to Fig. 7 is the enlarged diagram of a-quadrant in Fig. 3.Described groove 24 bottoms can be plane, and the sidewall of described groove 24 is also plane, the vertical connection of sidewall of the bottom of described groove 24 and described groove 24, as shown in Figure 5.The edge of described groove 24 bottoms can also be made as arc domatic as shown in Figure 6 and Figure 7, and the sidewall of described groove 24 can be plane as shown in Figure 6, also can be domatic for arc as shown in Figure 7.Preferably, in the present embodiment, the edge of described groove 24 bottoms is made as that to have the arc of certain radian domatic, and the sidewall of described groove 24 is also domatic for having the arc of certain radian.More preferably, the domatic extended surface making progress of the arc of described groove 24 sidewalls arc domatic and described groove 24 bottom margins coincides.Because the edge of wafer is the arc with certain radian, the edge of described groove 24 bottoms is made as to have the arc of certain radian domatic, can guarantee that, when wafer is positioned at described groove 24 bottoms, the edge of the edge of wafer and described groove 24 bottoms completely closely fits together.
Refer to Fig. 8, Fig. 8 is that described wet etch processor is placed the structural representation after wafer.As shown in Figure 8, described wafer 28 be placed in described groove 24 interior after, described vacuum generating device 22 is started working, and makes described wafer 28 be adsorbed on tightly the bottom of described groove 24.
Concrete, the degree of depth of described groove 24 should be more than or equal to the thickness of described wafer 28, and preferably, in the present embodiment, the degree of depth of described groove 24 is greater than the thickness of described wafer 28.
Refer to Fig. 9 to Figure 11, Fig. 9 to Figure 11 is the enlarged diagram in B region in Fig. 8, and wherein, Fig. 9 is corresponding with Fig. 5, and Figure 10 is corresponding with Fig. 6, and Figure 11 is corresponding with Fig. 7.
Incorporated by reference to Fig. 5, consult Fig. 9, the diameter of described wafer 28 equals the diameter of described groove 24 bottoms, the edge of described wafer 28 is mutually concordant with the edge of described groove 24, described through hole 242 and described the first air-flow through hole 23 are all positioned at the below of described wafer 28, when described wafer 28 is placed in described groove 24 bottom, described wafer 28 covers all through holes 242, it is the diameter that the diameter of described wafer 28 is greater than the via regions 241 that is distributed with described through hole 242, when guaranteeing 22 work of described vacuum generating device, described wafer 28 can be closely adsorbed on the bottom of described groove 24.
It should be noted that, now, the diameter of described wafer 28 can be less than the diameter of described groove 24 bottoms, as long as meet the diameter that the diameter of described wafer 28 is greater than described via regions 241, while making described wafer 28 be placed in described groove 24 bottom, can cover described through hole 242 completely.
Incorporated by reference to Fig. 6, consult Fig. 9, the diameter of described groove 24 bottoms equals the diameter of described wafer 28, the fringe region in described wafer 28 fronts is arc area, and the fringe region of described groove 24 bottoms is that arc is domatic, domatic and the described arc area of described arc matches, so that described wafer 28 is while being positioned at described groove 24 bottom, the edge of described wafer 28 can completely closely fit together with the edge of described groove 24 bottoms, when described wafer 28 is corroded, can effectively prevent that corrosive liquid from contacting with the front of described wafer 28.
Concrete, the arc arc area domatic and described crystal round fringes of described groove 24 bottoms matches, and is the horizontal length L at the domatic two ends of described arc
1equal the horizontal length L at described arc area two ends
2, the height h that described arc is domatic
1equal the height h of described arc area
2, the arc length of the domatic longitudinal section of described arc equals the arc length of described arc area longitudinal section.Preferably, the horizontal length L at the domatic two ends of described arc
1be 3～5mm, the distance at distance described wafer 28 edges, the domatic one end away from described groove 24 sidewalls of described arc is 3～5mm.
Concrete, the sidewall of described groove 24 is vertical plane, in whole described groove 24, only has the near zone of described bottom and sidewall contact to be made as arc domatic.
As shown in Figure 9; by the edge of described groove 24 is made as, to have the arc that the edge with described wafer 28 matches domatic; when described wafer 28 is close to the bottom of described groove 24; the edge of described groove 24 bottoms can be close in the edge of described wafer 28; make between described wafer 28 and described groove 24 bottoms, without any gap, effectively to prevent that corrosive liquid from contacting with the protected front of described wafer 28.
Incorporated by reference to Fig. 7, consult Figure 10, Figure 10 is the same with Fig. 9, the diameter of described groove 24 bottoms equals the diameter of described wafer 28, the fringe region in described wafer 28 fronts is arc area, and the fringe region of described groove 24 bottoms is that arc is domatic, domatic and the described arc area of described arc matches, so that described wafer 28 is while being positioned at described groove 24 bottom, the edge of described wafer 28 can completely closely fit together with the edge of described groove 24 bottoms, when described wafer 28 is corroded, can effectively prevent that corrosive liquid from contacting with the front of described wafer 28.
Concrete, the arc arc area domatic and described crystal round fringes of described groove 24 bottoms matches, and is the horizontal length L at the domatic two ends of described arc
1equal the horizontal length L at described arc area two ends
2, the height h that described arc is domatic
1equal the height h of described arc area
2, the arc length of the domatic longitudinal section of described arc equals the arc length of described arc area longitudinal section.Preferably, the horizontal length L at the domatic two ends of described arc
1be 3～5mm, the distance at distance described wafer 28 edges, the domatic one end away from described groove 24 sidewalls of described arc is 3～5mm.
Concrete, the sidewall of described groove 24 is also that arc is domatic, preferably, in the present embodiment, the arc of the described groove 24 sidewalls domatic extended surface making progress of arc domatic and described groove 24 bottoms coincides.
In conjunction with Fig. 5 to Fig. 7, Fig. 9 to Figure 11, preferably, in the present embodiment, the fringe region of described groove 24 bottoms for the arc matching with the arc area at described wafer 28 edges domatic, described groove 24 sidewalls for the arc that coincides of the domatic extended surface making progress of arc with described groove 24 bottoms domatic.
The present invention also provides a kind of using method of above-mentioned wet etch processor, and described using method comprises the following steps:
1) provide a wet etch processor, the diameter of the bottom portion of groove of described wet etch processor is with to wait to corrode brilliant diameter of a circle identical; The back side to be corroded of one wafer is placed in upward in the groove of liner of described wet etch processor, and the edge of described wafer and the edge of described groove are aligned; Open described vacuum generating device, the bottom by described wafer adsorption at described groove;
2) described absorption there are the liner of wafer and described pedestal put into etchant solution, the back side that described wafer is to be corroded is corroded; The etchant solution using is potassium hydroxide (KOH) solution or TMAH (Tetramethylammonium Hydroxide Tetramethylammonium hydroxide) solution.
3) after corrosion, there are the liner of wafer and described pedestal to take out from etchant solution described absorption, use wafer described in deionized water rinsing, liner and pedestal; Close described vacuum generating device, wafer is taken off from described liner.
It should be noted that; the second gas channel in described wet etch processor in the second subbase seat is connected with described vacuum generating device by a connecting tube; when described connecting tube is connected with described the second gas channel; the junction of described connecting tube and described the second gas channel should be realized and being tightly connected; to avoid in step 2) in while having the liner of wafer and described pedestal to put into etchant solution described absorption etchant solution enter described the second gas channel, and then may cause corrosion damage to the protected front of described wafer.
Need to further illustrate, in step 2) in step that wafer is corroded, one end and described vacuum generating device that described connecting tube is connected with described vacuum generating device all remain on outside described etchant solution.
In sum, the invention provides a kind of wet etch processor, described wet etch processor comprises pedestal, liner and vacuum generating device, in described pedestal, be provided with the gas channel being connected with described vacuum generating device, in described substrate, be provided with groove, bottom portion of groove is provided with and is connected with described gas channel and through hole one to one, and it is domatic that the edge of described bottom portion of groove is provided with the arc matching with crystal round fringes arc area.Described wet etch processor can make the back side that wafer is to be corroded completely exposed, can realize the corrosion to whole described wafer rear, it is domatic that the edge of described liner groove is provided with the arc matching with described crystal round fringes arc area, the material of described liner is fluorubber or silica gel again, fluorubber and silica gel all have retractility, when the bottom of described liner groove is close in the protected front of described wafer, under the effect of vacuum generating device, can complete by the distortion of described liner the absorption of described liner to described wafer frontside, front and the described liner of whole described wafer are fitted tightly, prevent that corrosive liquid from infiltrating the front to described wafer, effectively protect the front of described wafer not contact with described corrosive liquid, described wet etch processor is simple in structure, easy to operate, and cheap for manufacturing cost, can reuse, and greatly reduces production cost.
Above-described embodiment is illustrative principle of the present invention and effect thereof only, but not for limiting the present invention.Any person skilled in the art scholar all can, under spirit of the present invention and category, modify or change above-described embodiment.Therefore, such as in affiliated technical field, have and conventionally know that the knowledgeable, not departing from all equivalence modifications that complete under disclosed spirit and technological thought or changing, must be contained by claim of the present invention.
Claims (13)
1. a wet etch processor, is suitable for wafer to carry out single-sided corrosion, and described wafer has the back side to be corroded and the front needing protection, and it is characterized in that, described wet etch processor comprises: pedestal, liner and vacuum generating device;
In described pedestal, be provided with vertically the first gas channel, described the first gas channel is communicated with the upper surface of described pedestal; Described the first gas channel is connected with described vacuum generating device;
Described liner is positioned at the upper surface of described pedestal, in described liner, is provided with groove, and the diameter of described bottom portion of groove is more than or equal to described brilliant diameter of a circle; Described bottom portion of groove is provided with via regions, and the diameter of described via regions is less than described brilliant diameter of a circle; In described via regions, be provided with the through hole being connected with described the first gas channel, described through hole is corresponding up and down with described the first gas channel.
2. wet etch processor according to claim 1, is characterized in that: described pedestal comprises the first subbase seat and the second subbase seat, and described the first gas channel is positioned at described the first subbase seat; In described the first subbase seat, be also provided with the cavity structure being connected with described the first gas channel; In described the second subbase seat, be provided with vertically the second gas channel, described second gas channel one end is connected with described cavity structure, and the other end is connected with described vacuum generating device.
3. wet etch processor according to claim 1, it is characterized in that: the fringe region of described wafer frontside is arc area, the diameter of described bottom portion of groove equals described brilliant diameter of a circle, and the fringe region of described bottom portion of groove is that arc is domatic, domatic and the described arc area of described arc matches, so that described wafer is while being positioned at described bottom portion of groove, the edge of described wafer and the edge of described bottom portion of groove fit together completely.
4. wet etch processor according to claim 1, is characterized in that: described the first gas channel is distributed in described pedestal equably, and described through hole is distributed in the bottom of described groove equably.
5. wet etch processor according to claim 1, is characterized in that: be positioned at described pedestal zone line and fringe region adjacent two described in the spacing of the first gas channel be less than be positioned at other regions of described pedestal adjacent two described in the spacing of the first gas channel; Be positioned at described liner zone line and fringe region adjacent two described in the spacing of through hole be less than be positioned at other regions of described liner adjacent two described in the spacing of through hole.
6. wet etch processor according to claim 1, is characterized in that: the material of described pedestal is tetrafluoroethene, polypropylene or Teflon.
7. wet etch processor according to claim 1, is characterized in that: the material of described liner is silica gel or fluorubber.
8. wet etch processor according to claim 1, is characterized in that: described liner is consistent with described the first sub-base shape, and size is identical.
9. wet etch processor according to claim 8, is characterized in that: described liner cross section be shaped as circle, being shaped as of described the first subbase seat cross section is circular, described bottom portion of groove cross section be shaped as circle.
10. wet etch processor according to claim 1, is characterized in that: the degree of depth of described groove is more than or equal to the thickness of described wafer.
11. wet etch processors according to claim 1, is characterized in that: between described pedestal and described vacuum generating device, be also provided with strainer valve, be suitable for preventing that corrosive liquid from entering described vacuum generating device.
The using method of 12. 1 kinds of wet etch processors as described in any one in claim 1 to 11, is characterized in that: comprise the following steps:
1) back side to be corroded of a wafer is placed in upward in the groove of liner of described wet etch processor, and the edge of described wafer and the edge of described groove are aligned; Open described vacuum generating device, the bottom by described wafer adsorption at described groove;
2) described absorption there are the liner of wafer and described pedestal put into etchant solution, the back side that described wafer is to be corroded is corroded;
3) after corrosion, there are the liner of wafer and described pedestal to take out from etchant solution described absorption, use wafer described in deionized water rinsing, liner and pedestal; Close described vacuum generating device, wafer is taken off from described liner.
The using method of 13. wet etch processors according to claim 12, is characterized in that: step 2) in the etchant solution that uses be KOH solution or TMAH solution.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201410432543.0A CN104201135B (en) | 2014-08-28 | 2014-08-28 | A kind of wet etch processor and its application method |
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| CN105060241A (en) * | 2015-07-17 | 2015-11-18 | 上海交通大学 | Wet etching diversion trench device and usage thereof |
| CN105220143A (en) * | 2015-07-23 | 2016-01-06 | 西安交通大学 | Based on front side of silicon wafer microstructure protector and the method for wet corrosion technique |
| CN104986721B (en) * | 2015-05-25 | 2016-08-24 | 中国科学院半导体研究所 | Acid-proof, the protective cover of caustic corrosion and using method thereof |
| CN107445136A (en) * | 2017-07-05 | 2017-12-08 | 中北大学 | Silicon etching system based on gas phase TMAH |
| CN107452658A (en) * | 2017-09-11 | 2017-12-08 | 浙江爱旭太阳能科技有限公司 | A kind of silicon chip one side etching device |
| CN107946215A (en) * | 2017-11-23 | 2018-04-20 | 长江存储科技有限责任公司 | Silicon wafer warpage state adjustment method |
| CN108426978A (en) * | 2017-02-14 | 2018-08-21 | 无锡华瑛微电子技术有限公司 | Wafer local processing method |
| CN110286081A (en) * | 2018-03-19 | 2019-09-27 | 宝山钢铁股份有限公司 | A kind of pure water infiltration type immersion corrosion laboratory holder and experimental provision |
| CN112071957A (en) * | 2020-09-18 | 2020-12-11 | 北京智创芯源科技有限公司 | Focal plane chip dielectric film stripping device and focal plane chip dielectric film stripping method |
| CN112309854A (en) * | 2019-07-29 | 2021-02-02 | 上海先进半导体制造股份有限公司 | Control method and system for corrosion uniformity of TiNiAg layer on wafer |
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| Publication number | Priority date | Publication date | Assignee | Title |
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| CN104986721B (en) * | 2015-05-25 | 2016-08-24 | 中国科学院半导体研究所 | Acid-proof, the protective cover of caustic corrosion and using method thereof |
| CN105060241A (en) * | 2015-07-17 | 2015-11-18 | 上海交通大学 | Wet etching diversion trench device and usage thereof |
| CN105220143A (en) * | 2015-07-23 | 2016-01-06 | 西安交通大学 | Based on front side of silicon wafer microstructure protector and the method for wet corrosion technique |
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| CN107445136A (en) * | 2017-07-05 | 2017-12-08 | 中北大学 | Silicon etching system based on gas phase TMAH |
| CN107452658A (en) * | 2017-09-11 | 2017-12-08 | 浙江爱旭太阳能科技有限公司 | A kind of silicon chip one side etching device |
| CN107946215A (en) * | 2017-11-23 | 2018-04-20 | 长江存储科技有限责任公司 | Silicon wafer warpage state adjustment method |
| CN110286081A (en) * | 2018-03-19 | 2019-09-27 | 宝山钢铁股份有限公司 | A kind of pure water infiltration type immersion corrosion laboratory holder and experimental provision |
| CN110286081B (en) * | 2018-03-19 | 2021-09-17 | 宝山钢铁股份有限公司 | Pure water immersion type immersion corrosion experiment clamp and experiment device |
| CN112309854A (en) * | 2019-07-29 | 2021-02-02 | 上海先进半导体制造股份有限公司 | Control method and system for corrosion uniformity of TiNiAg layer on wafer |
| CN112309854B (en) * | 2019-07-29 | 2023-11-24 | 上海积塔半导体有限公司 | Method and system for controlling corrosion uniformity of TiNiAg layer on wafer |
| CN112071957A (en) * | 2020-09-18 | 2020-12-11 | 北京智创芯源科技有限公司 | Focal plane chip dielectric film stripping device and focal plane chip dielectric film stripping method |
| CN112071957B (en) * | 2020-09-18 | 2021-04-20 | 北京智创芯源科技有限公司 | Focal plane chip dielectric film stripping device and focal plane chip dielectric film stripping method |
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