CN203733809U - Soft fast-recovery diode - Google Patents
Soft fast-recovery diode Download PDFInfo
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- CN203733809U CN203733809U CN201420101132.9U CN201420101132U CN203733809U CN 203733809 U CN203733809 U CN 203733809U CN 201420101132 U CN201420101132 U CN 201420101132U CN 203733809 U CN203733809 U CN 203733809U
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- 238000011084 recovery Methods 0.000 title claims abstract description 28
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- 238000007254 oxidation reaction Methods 0.000 claims description 40
- 230000003647 oxidation Effects 0.000 claims description 39
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- 230000015572 biosynthetic process Effects 0.000 claims description 7
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- 238000000137 annealing Methods 0.000 description 2
- 150000001875 compounds Chemical class 0.000 description 2
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- 239000000758 substrate Substances 0.000 description 2
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 description 1
- 230000003213 activating effect Effects 0.000 description 1
- 238000004026 adhesive bonding Methods 0.000 description 1
- 229910052785 arsenic Inorganic materials 0.000 description 1
- RQNWIZPPADIBDY-UHFFFAOYSA-N arsenic atom Chemical compound [As] RQNWIZPPADIBDY-UHFFFAOYSA-N 0.000 description 1
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Abstract
The utility model relates to a soft fast-recovery diode. The diode includes an N-type intrinsic region, a back N+ buffer region, an anode metal layer and a cathode metal layer. The back N+ buffer region is arranged on the back of the N-type intrinsic region. A P-type emission region is arranged between the front of the N-type intrinsic region and the anode metal layer. The two ends of the anode metal layer are symmetrically provided with a masking oxide layer. The boundary of an active region is provided with a P-type high-resistance region, and the center of the active region is provided with a P+ ohmic contact layer. A global life control region is arranged on the whole area of the diode and covers all the structure layers of the diode. In the axial direction of the diode, a local life control layer is disposed in a position, near the P+ ohmic contact layer, in the P-type emission region. In the direction, perpendicular to the axial direction, of the diode, the local life control layer is disposed in a plane formed by the P-type emission region and the P-type high-resistance region. According to the utility model, the fast recovery characteristic of the device is achieved by adopting global and local life control, and the anti-avalanche capability of the device is improved by adding the high-resistance region.
Description
Technical field
The utility model relates to a kind of semiconductor power device, is specifically related to a kind of soft fast recovery diode.
Background technology
The inverse parallel of single or multiple fast recovery diodes (FRD) chip becomes IGBT module in igbt (IGBT) chip package, be referred to as IGBT device, be widely used in the mesohigh fields such as electric power system that voltage is 1200V-6500V, locomotive traction.Along with device withstand voltage increases, there is the FRD chip of soft fast recovery, low concussion and high avalanche capability characteristic, the utility model is called soft fast recovery diode, and its importance is more and more outstanding.
The course of work of FRD is the process that charge carrier (electronics and hole) injects and extracts, during the advantage of soft fast recovery diode is embodied in and oppositely resumes work.When high-voltage diode transfers to while turn-offing by opening, the charge carrier in intrinsic region can through certain hour could be extracted by electrode and compound totally, this time is called t reverse recovery time
rr.The extraction process of charge carrier is by reverse current I
rcharacterize I
rby zero, be increased to maximum inverse peak current I
rRMtime used is called t
a, I
rby I
rRMzero time used that was decreased to is called t
b, two time ratios are called the softness factor (S=t
b/ t
a).Soft fast recovery diode has the higher softness factor, i.e. charge carrier extraction speed is slack-off in the extraction later stage, can effectively reduce like this electric current, voltage concussion, broadening safety operation area.
For high-voltage diode, substrate doping is lower, when device is under anti-condition of work partially, can be because ionization by collision make current multiplication when the PN junction of emitter region and intrinsic region is in high pressure, voltage is higher, and current multiplication is more serious, until finally there is avalanche breakdown, component failure.Improve FRD avalanche capability and can avoid electricity, thermal breakdown to lose efficacy, improve anti-safety operation area RBSOA partially.
Want to obtain the fast diode of reverse resume speed and must adopt life-span control mode, conventional diode structure as shown in Figure 1, mainly comprise N-type intrinsic region 01, back of the body N+ buffering area 02, P type emitter region 03, oxidation masking layer 04, anode and cathode metal 051,052 and overall situation life-span controlled area 06; The overall situation life-span is controlled and mainly to refer to by heavy metal and adulterate (Pt, Au etc.) or the mode of electron irradiation is introduced complex centre, reduce the minority carrier lifetime of whole chip, the minority carrier that makes FRD is can be fast when oppositely recovering compound and extract totally, reduces t
rr.But for traditional F RD structure, if will make t
rrbe reduced to tens to the magnitude of hundreds of ns, carrier lifetime must be dropped to very littlely, chip internal defect increases, and will bring thus that reverse leakage is bigger than normal, terminal reliability variation, the softness factor diminishes and shake the risk of aggravating; Now there are some researches show, the defect that electron irradiation produces can be eliminated in high temperature, long-term work, makes device performance degeneration simultaneously.
Utility model content
For the deficiencies in the prior art, the purpose of this utility model is to provide a kind of soft fast recovery diode, and the utility model, by adopting the overall situation to add Localized Lifetime Control mode, is realized the soft fast recovery characteristics of device; By increasing high resistance area, improve the avalanche resistance ability of device.
The purpose of this utility model is to adopt following technical proposals to realize:
The utility model provides a kind of soft fast recovery diode, described diode comprises N-type intrinsic region 01, the back of the body N+ buffering area 02, anode metal layer 051 and cathodic metal layer 052, described back of the body N+ buffering area 02 is arranged at the back side of N-type intrinsic region 01, and described anode metal layer 051 is arranged at the anode of diode; Described cathodic metal layer 052 is arranged at the negative electrode of diode;
Its improvements are, between the front of described N-type intrinsic region 01 and anode metal layer 051, be provided with P type emitter region 13, two ends in described anode metal layer 051 are arranged with oxidation masking layer, boundary in diode active area is provided with P type high resistance area 18, in the center of active area, is provided with P+ ohmic contact layer 19; Overall situation life-span controlled area 16 is arranged at the integral body of diode, covers all structure sheafs of diode; On the axial direction of diode, described Localized Lifetime Control layer 17 is positioned at P type emitter region 13 near on the position of P+ ohmic contact layer 19, in the direction perpendicular to axial direction of diode, Localized Lifetime Control layer 17 is positioned at the plane of P type emitter region 13 and P type high resistance area 18 compositions.
Further, the transverse width of described P type emitter region 13 is less than the transverse width of N-type intrinsic region 01; The transverse width of described P type high resistance area 18 is less than the transverse width of P type emitter region 13 and the two ends that P type high resistance area 18 is symmetricly set in P type emitter region 13; The surface doping concentration of described P type emitter region 13 is 3e15-5e17cm
-3, junction depth is 4-25um; The doping content of described P type high resistance area 18 is 1e15-1e17cm
-3, junction depth is 5-30um.
Further, described oxidation masking layer comprises oxidation masking layer 141,142 and secondary oxidation masking layer 143,144; The height of secondary oxidation masking layer 144 is greater than the height of secondary oxidation masking layer 143; Secondary oxidation masking layer 144 and secondary oxidation masking layer 143 form stepped.
Further, described secondary oxidation masking layer 144 and secondary oxidation masking layer 143 form the stepped P+ ohmic contact layer 19 that is symmetricly set in.
Further, the life-span of described Localized Lifetime Control layer 17 is 1-100ns.
Further, adopt H
+or He
++ion carries out energetic ion and injects formation Localized Lifetime Control layer 17, adopts the mode that expands Pt or electron irradiation to form overall situation life-span controlled area 16.
Further, described P type emitter region 13 and P+ ohmic contact layer 19 form active area, and described P type high resistance area 18 doping contents are lower than the doping content of P type emitter region 13, and described P type high resistance area 18 width are less than active area width.
Compared with the prior art, the beneficial effect that the utility model reaches is:
1, soft fast recovery, low EMI, low-loss.
Adopt the overall situation to add Localized Lifetime Control mode, P type emitter region arranges the Localized Lifetime Control district in low life-span to reduce anode transmitting injection efficiency, to reduce charge carrier number, reduce reverse recovery loss, improve simultaneously and oppositely recover softness, reduction concussion and electromagnetic interference noise EMI.
2, the withstand voltage stability of terminal.
At the face of overlooking, carry out Localized Lifetime Control design, avoid terminal affected by impurity defect, reduce reverse leakage, be beneficial to the withstand voltage stability that improves termination environment, and then improve device reliability.
3, the withstand voltage height of snowslide, broadening place of safety.
It is good that high resistance area, edge, active area structural manufacturing process is manufactured matching, can form with terminal pressure ring simultaneously, only needs to increase a step etching technics, the avalanche capability of diode in the time of can strengthening reverse breakdown by this structure, the reverse safety operation area RBSOA of broadening.
Accompanying drawing explanation
Fig. 1 is traditional F RD device profile structural representation;
Fig. 2 is the diode component cross-sectional view that the utility model provides;
Fig. 3 controls distribution schematic diagram in diode impurity concentration and the life-span that the utility model provides;
Fig. 4 is the structural representation of the unactivated P type doping 131 of the formation that provides of the utility model;
Fig. 5 is the structural representation of the unactivated P type doping 181 of the formation that provides of the utility model;
Fig. 6 is that the P type high resistance area 18 of P type emitter region 13, active area edge and the structural representation of secondary oxidation masking layer 143,144 are provided when providing the utility model;
Fig. 7 is the structural representation of the formation P+ ohmic contact layer 19 that provides of the utility model;
Fig. 8 is the diode device plan structure schematic diagram that the utility model provides;
Wherein: 01-N type intrinsic region, 02-carries on the back N+ buffering area, 03-conventional diode P type emitter region, 04-conventional diode oxidation masking layer, 051-anode metal layer, 052-cathodic metal layer, 06-tradition overall situation life-span controlled area; 13-P type emitter region, the unactivated P type of 131-emitter region, 141 and oxidation masking layer of 142-, 143 and bis-oxidation masking layers of 144-, 16-overall situation life-span controlled area, 17-Localized Lifetime Control layer, the P type high resistance area of 18-active area edge, the unactivated P type of 181-high resistance area, 19-high concentration P+ ohmic contact layer, 20-photoresist, 21-scribing road, 22-termination environment, 23-active area, 25-Localized Lifetime Control window, 28-P type high resistance area window.
Embodiment
Below in conjunction with accompanying drawing, embodiment of the present utility model is described in further detail.
The utility model provides a kind of novel soft fast recovery diode device architecture, longitudinally diode component comprises high concentration P+ ohmic contact layer, P type emitter region, N-type intrinsic region, back of the body N+ buffering area and positive and negative electrode, and overall situation life-span controlled area and Localized Lifetime key-course; Transverse diode device includes P type high resistance area, termination environment and the scribing road of source region, active area boundary.The utility model, by adopting the overall situation to add Localized Lifetime Control mode, is realized the soft fast recovery characteristics of device; By increasing high resistance area, improve the avalanche resistance ability of device.
The soft fast recovery diode structure that the utility model provides a kind of overall situation to add Localized Lifetime Control, and the high resistance area structure that possesses high avalanche capability function, in order to address the above problem.The utility model diode structure as shown in Figure 2, compare with traditional structure, except N-type intrinsic region 01, back of the body N+ buffering area 02, anode metal layer 051 and cathodic metal layer 052 structurally do not have large change, newly design and added P type emitter region 13, oxidation masking layer, overall situation life-span controlled area 16, Localized Lifetime Control layer 17, P type high resistance area 18 and the high concentration P+ ohmic contact layer 19 of active area (13 and 19 general designations) boundary.Be specially:
Diode comprises N-type intrinsic region 01, the back of the body N+ buffering area 02, anode metal layer 051 and cathodic metal layer 052, and described back of the body N+ buffering area 02 is arranged at the back side of N-type intrinsic region 01, and described anode metal layer 051 is arranged at the anode of diode; Described cathodic metal layer 052 is arranged at the negative electrode of diode;
Between the front of described N-type intrinsic region 01 and anode metal layer 051, be provided with P type emitter region 13, at the two ends of described anode metal layer 051, be arranged with oxidation masking layer, the boundary in diode active area is provided with P type high resistance area 18 and P+ ohmic contact layer 19; Overall situation life-span controlled area 16 is arranged at the integral body of diode, covers all structure sheafs of diode; On the axial direction of diode, described Localized Lifetime Control layer 17 is positioned at P type emitter region 13 near on the position of P+ ohmic contact layer 19, in the direction perpendicular to axial direction of diode, Localized Lifetime Control layer 17 is positioned at the plane of P type emitter region 13 and P type high resistance area 18 compositions, avoid Localized Lifetime Control layer 17 to appear at termination environment, adopt injection gear version to block termination environment and inject with feasible region, gear plate matter adopts photolithography plate, metal or photoresist realization.
The P type emitter region 13 of the utility model design has lower doping content, at anode metal 051, can touch the zone design high concentration P+ ohmic contact layer 19 of silicon simultaneously, to avoid ohmic contact problem, the design of this active area can reduce to be injected into the charge carrier number of intrinsic region 01, reduces and oppositely recovers peak current and dynamic loss.The utility model life-span is controlled on the basis of traditional structure, increased Localized Lifetime Control district 17, to realize soft fast recovery characteristics, the implantation dosage of overall situation life-span controlled area 16 controls 06 lower than the tradition life-span, thereby can solve the problem that electric leakage is large, softness is little that the control of overall situation life-span brings; Can adopt H
+or He
++carry out energetic ion and inject formation 17, can adopt the mode that expands Pt or electron irradiation to form 16.The utility model has designed high resistance area 18, and to improve avalanche capability, diode is in the reverse breakdown course of work, and high resistance area is beneficial to the impact ionization rate that reduces PN junction, strengthens avalanche resistance ability.
The transverse width of P type emitter region 13 is less than the transverse width of N-type intrinsic region 01; The transverse width of described P type high resistance area 18 is less than the transverse width of P type emitter region 13 and the two ends that P type high resistance area 18 is symmetricly set in P type emitter region 13; The surface doping concentration of described P type emitter region 13 is 3e15-5e17cm
-3, junction depth is 4-25um; The doping content of described P type high resistance area 18 is 1e15-1e17cm
-3, junction depth is 5-30um.
Oxidation masking layer comprises oxidation masking layer 141,142 and secondary oxidation masking layer 143,144; The height of secondary oxidation masking layer 144 is greater than the height of secondary oxidation masking layer 143; Secondary oxidation masking layer 144 and secondary oxidation masking layer 143 form stepped.
Secondary oxidation masking layer 144 and secondary oxidation masking layer 143 form the stepped P+ ohmic contact layer 19 that is symmetricly set in.
The manufacture method of the utility model structure is as follows:
A, on the basis of initial substrates 01, the N-type impurity such as phosphorus, arsenic are injected at the back side, form the back of the body N+ buffering area 02 of 5-40um after knot.
B, surface clean, the injection oxide layer 140 of growth 300-2000 dust, window is injected in gluing, the rear P of formation type that develops doping, and the p type impurities such as band glue B Implanted, form unactivated P type and adulterate 131, as shown in Figure 4.
C, remove photoresist, clean rear knot, form the P type doping 132 of certain junction depth.After once oxidation, etching, form oxidation masking layer 141,142 one time, as shown in Figure 5,141,142 stop as injection, through p type impurity, inject, and form unactivated P type doping 181.
D, secondary photoetching, etching removes 142.
E, remove photoresist, after cleaning, knot and oxidation, form P type high resistance area 18 and the secondary oxidation masking layer 143 of P type emitter region 13, active area edge, as shown in Figure 6 simultaneously.In same structure, total doping content of 18 should be lower than P type emitter region 13; 13 the about 3e15-5e17cm-3 of surface doping concentration, the about 4-25um of junction depth; 18 the about 1e15-1e17cm-3 of doping content, the about 5-30um of junction depth.18 transverse width is less than P type emitter region 13.
F, third photo etching form the injection window of high concentration P+ ohmic contact layer 19, after injecting, activating, form 19, and as shown in Figure 7,19 effect is the ohmic contact resistance that reduces anode metal and silicon face.
G, H
+or He
++energetic ion injects and annealing, controls the position of Localized Lifetime key-course 17 according to Implantation Energy, dosage, according to the defect shape of annealing temperature and time control 17, quality etc.Diode axially on (Y-direction), 17 are positioned at P type emitter region 13 near 19 position, in the depletion layer in the time of should avoiding appearing at reverse breakdown in p type island region 13, as shown in Figure 2.At transversely (directions X) of diode, 17 should be positioned at 13 and 18 scopes, avoid affecting the termination environment at chip edge place; From chip, overlook, Localized Lifetime Control window 25 includes source region window 23, does not exceed P type high resistance area window 28; , as shown in Figure 8; Adopt to inject gear version and block termination environment and inject with feasible region, gear plate matter available light is mechanical, metal or photoresist etc.Approximately several-tens ns of 17 life-span.The charge carrier of Fig. 2 centerline and life-span distribute as shown in Figure 3.
H, growing metal in a conventional manner, as shown in Figure 2, carry out overall situation life-span control type to device, forms 16.
I, deposit passivation layer.
By above-mentioned steps, obtained having the soft fast recovery diode device architecture of high dynamic avalanche tolerance.
Finally should be noted that: above embodiment is only in order to illustrate that the technical solution of the utility model is not intended to limit, although the utility model is had been described in detail with reference to above-described embodiment, those of ordinary skill in the field are to be understood that: still can modify or be equal to replacement embodiment of the present utility model, and do not depart from any modification of the utility model spirit and scope or be equal to replacement, it all should be encompassed in the middle of claim scope of the present utility model.
Claims (7)
1. a soft fast recovery diode, described diode comprises N-type intrinsic region (01), the back of the body N+ buffering area (02), anode metal layer (051) and cathodic metal layer (052), described back of the body N+ buffering area (02) is arranged at the back side of N-type intrinsic region (01), and described anode metal layer (051) is arranged at the anode of diode; Described cathodic metal layer (052) is arranged at the negative electrode of diode;
It is characterized in that, between the front of described N-type intrinsic region (01) and anode metal layer (051), be provided with P type emitter region (13), two ends in described anode metal layer (051) are arranged with oxidation masking layer, boundary in diode active area is provided with P type high resistance area (18), is provided with P+ ohmic contact layer (19) in the center of active area; Overall situation life-span controlled area (16) is arranged at the integral body of diode, covers all structure sheafs of diode; On the axial direction of diode, described Localized Lifetime Control layer (17) is positioned at P type emitter region (13) near on the position of P+ ohmic contact layer (19), in the direction perpendicular to axial direction of diode, Localized Lifetime Control layer (17) is positioned at the plane of P type emitter region (13) and P type high resistance area (18) composition.
2. soft fast recovery diode as claimed in claim 1, is characterized in that, the transverse width of described P type emitter region (13) is less than the transverse width of N-type intrinsic region (01); The transverse width of described P type high resistance area (18) is less than the transverse width of P type emitter region (13) and the two ends that P type high resistance area (18) is symmetricly set in P type emitter region (13); The surface doping concentration of described P type emitter region (13) is 3e15-5e17cm
-3, junction depth is 4-25um; The doping content of described P type high resistance area (18) is 1e15-1e17cm
-3, junction depth is 5-30um.
3. soft fast recovery diode as claimed in claim 1, is characterized in that, described oxidation masking layer comprises an oxidation masking layer (141,142) and secondary oxidation masking layer (143,144); The height of secondary oxidation masking layer (144) is greater than the height of secondary oxidation masking layer (143); Secondary oxidation masking layer (144) and secondary oxidation masking layer (143) form stepped.
4. soft fast recovery diode as claimed in claim 3, is characterized in that, described secondary oxidation masking layer (144) and secondary oxidation masking layer (143) form the stepped P+ of being symmetricly set in ohmic contact layer (19).
5. soft fast recovery diode as claimed in claim 1, is characterized in that, the life-span of described Localized Lifetime Control layer (17) is 1-100ns.
6. soft fast recovery diode as claimed in claim 1, is characterized in that, adopts H
+or He
++ion carries out energetic ion and injects formation Localized Lifetime Control layer (17), adopts the mode that expands Pt or electron irradiation to form overall situation life-span controlled area (16).
7. soft fast recovery diode as claimed in claim 1, it is characterized in that, described P type emitter region (13) and P+ ohmic contact layer (19) form active area, described P type high resistance area (18) doping content is lower than the doping content of P type emitter region (13), and described P type high resistance area (18) width is less than active area width.
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|---|---|---|---|
| CN201420101132.9U CN203733809U (en) | 2014-03-06 | 2014-03-06 | Soft fast-recovery diode |
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| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201420101132.9U CN203733809U (en) | 2014-03-06 | 2014-03-06 | Soft fast-recovery diode |
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Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN107731932A (en) * | 2017-11-13 | 2018-02-23 | 成都方舟微电子有限公司 | A kind of power buffer diode chip structure and preparation method thereof |
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2014
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Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN107731932A (en) * | 2017-11-13 | 2018-02-23 | 成都方舟微电子有限公司 | A kind of power buffer diode chip structure and preparation method thereof |
| CN107731932B (en) * | 2017-11-13 | 2024-02-02 | 成都方舟微电子有限公司 | Power buffer diode chip structure and manufacturing method thereof |
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