CN203728962U - Substrate supporting plate in molecular beam epitaxial large-scale production device - Google Patents
Substrate supporting plate in molecular beam epitaxial large-scale production device Download PDFInfo
- Publication number
- CN203728962U CN203728962U CN201420043728.8U CN201420043728U CN203728962U CN 203728962 U CN203728962 U CN 203728962U CN 201420043728 U CN201420043728 U CN 201420043728U CN 203728962 U CN203728962 U CN 203728962U
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- substrate
- supporting plate
- substrate supporting
- thermal radiation
- molecular beam
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- 239000000758 substrate Substances 0.000 title claims abstract description 70
- 238000011031 large-scale manufacturing process Methods 0.000 title abstract 2
- 230000005855 radiation Effects 0.000 claims abstract description 28
- 238000001451 molecular beam epitaxy Methods 0.000 claims description 17
- ZOKXTWBITQBERF-UHFFFAOYSA-N Molybdenum Chemical compound [Mo] ZOKXTWBITQBERF-UHFFFAOYSA-N 0.000 claims description 8
- 229910052750 molybdenum Inorganic materials 0.000 claims description 8
- 239000011733 molybdenum Substances 0.000 claims description 8
- 238000003801 milling Methods 0.000 claims description 3
- 238000000034 method Methods 0.000 abstract description 4
- 230000000903 blocking effect Effects 0.000 abstract 3
- 235000012431 wafers Nutrition 0.000 description 14
- 238000005516 engineering process Methods 0.000 description 6
- 238000000407 epitaxy Methods 0.000 description 4
- 238000004519 manufacturing process Methods 0.000 description 4
- 230000008646 thermal stress Effects 0.000 description 3
- 230000002860 competitive effect Effects 0.000 description 2
- 238000005520 cutting process Methods 0.000 description 2
- 230000007547 defect Effects 0.000 description 2
- 238000013461 design Methods 0.000 description 2
- 238000005457 optimization Methods 0.000 description 2
- 239000004065 semiconductor Substances 0.000 description 2
- 238000010521 absorption reaction Methods 0.000 description 1
- 230000009286 beneficial effect Effects 0.000 description 1
- 238000004140 cleaning Methods 0.000 description 1
- 238000011161 development Methods 0.000 description 1
- 238000009776 industrial production Methods 0.000 description 1
- 239000000463 material Substances 0.000 description 1
- 238000012797 qualification Methods 0.000 description 1
- 239000002994 raw material Substances 0.000 description 1
- 238000011160 research Methods 0.000 description 1
- 229940095676 wafer product Drugs 0.000 description 1
- 239000002699 waste material Substances 0.000 description 1
- 230000003245 working effect Effects 0.000 description 1
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- Physical Deposition Of Substances That Are Components Of Semiconductor Devices (AREA)
Abstract
The utility model relates to a substrate supporting plate in a molecular beam epitaxial large-scale production device. The substrate supporting plate comprises a step of a substrate sheet, a step of a circular ring for blocking heat radiation and a step for blocking the movement of the circular ring for blocking heat radiation, the three steps are of annular structures, and the substrate supporting plate is a circular through hole. In the substrate supporting plate provided by the utility model, by reducing the width of the step for placing a substrate, the contact area between the substrate and the supporting plate is reduced, and the growable area of the substrate in the growing process can be increased. Compared with a traditional substrate growth supporting plate, the substrate supporting plate provided by the utility model increases the available area of an epitaxial wafer, reduces the surface pollution of the substrate and improves the quality and the finished product rate.
Description
Technical field
The utility model relates to a kind of substrate supporting plate, belongs to field of semiconductor devices, relates in particular to the substrate supporting plate in a kind of molecular beam epitaxy full-scale plant.
Background technology
Molecular beam epitaxy (MBE) technology is a kind of epitaxy technology of multichip semiconductor layer film of the atomic shell order of magnitude precision of growing in semiconducter substrate, at the beginning of being born, is mainly used in scientific research.With respect to other epitaxy technology, the epitaxy speed of MBE relatively slowly and single can growing epitaxial chip size and the shortcoming such as limited amount, limited its application in industrial production.Along with the progressively development of MBE technology, can obtain 2 inch to the 6 inch epitaxial wafers that performance meets the demands by MBE technology, in simultaneously large-scale MBE equipment, single can growing epitaxial sheet quantity also significantly promote, and has met the demand of scale operation.But, carry out finding in MBE production at application 2 inch to 6 inch substrates, substrate slice by substrate supporting plate carrying in conventional MBE equipment carries out after epitaxy in growth room, and the approximately nearly 3mm scope of epitaxial wafer borderline region is failed growth, and having wasted epitaxial wafer can usable floor area; Find to be prone to the defects such as pollution, cut and thermal stresses line near epitaxial wafer surface-boundary simultaneously, increased the disqualification rate of epitaxial wafer product.In order to increase the utilized area of epitaxial wafer, reduce the defect of epitaxial wafer, the utility model proposes the substrate supporting plate in a kind of molecular beam epitaxy full-scale plant, this support board structure has reduced production cost, has also reduced waste of raw materials simultaneously.
Summary of the invention
The purpose of this utility model has been to provide the substrate supporting plate in a kind of molecular beam epitaxy full-scale plant, by the substrate bracket board size in optimization design MBE equipment, increase epitaxial wafer and can utilize area to reduce the surface imperfection of epitaxial wafer simultaneously, thereby reach the object that reduces production costs, improves industrialization competitive power.
The technical solution adopted in the utility model is the substrate supporting plate in a kind of molecular beam epitaxy full-scale plant for achieving the above object, this substrate supporting plate comprise substrate slice step, stop that the step of thermal radiation annulus, restriction stop the step that thermal radiation annulus moves, three steps are ring structure, and this substrate supporting plate is a manhole; The step that stops thermal radiation annulus stops between the step that thermal radiation annulus moves in the step of substrate slice and restriction; The step of described substrate slice, stop that the step of thermal radiation annulus, restriction stop that the step that thermal radiation annulus moves is the ledge structure centered by manhole; This substrate supporting plate is formed by mechanical workout by a complete molybdenum plate, forms three steps on molybdenum plate surface by Milling Process; The height of three steps and step radius are determined according to add substrate dimension.
In the utility model by reducing to place the step width of substrate, thereby reduce the contact area between substrate and supporting plate, increased the grown area of substrate in process of growth.Meanwhile, due to reducing of contact area, reduced between substrate and supporting plate due to the cut that slides and produce at substrate surface.And because supporting plate material and substrate there are differences on thermal absorption and transport properties, by reducing contact area, can effectively improve the thermal uniformity of substrate, thereby improve the homogeneity of epitaxial wafer and reduce thermal stresses line.In the utility model, place the step thicknesses of substrate by increase, to reduce because supporting plate surfacing loss in the conventional cleaning of supporting plate is on the supporting plate impact in work-ing life.
Compared with prior art, the utlity model has following beneficial effect.
1, the substrate supporting plate of comparing stock size, epitaxial wafer has larger utilized area, and epitaxial wafer surface scratch and pollution obviously reduce.
2, compare the substrate supporting plate of stock size, thermal stresses line also obviously reduces, thereby significantly improves and produce the qualification rate of product and can utilize area.
3,, by the substrate bracket board size in optimization design MBE equipment, increase epitaxial wafer and can utilize area to reduce the surface imperfection of epitaxial wafer simultaneously, thereby reach the object that reduces production costs, improves industrialization competitive power.
Brief description of the drawings
Fig. 1 is the structural representation of substrate supporting plate.
In figure: 1, place the step of substrate slice, 2, place the step that stops thermal radiation annulus, 3, restriction stops the step that thermal radiation annulus moves.
Embodiment
Below with reference to accompanying drawing, the utility model is described in further detail.
Be illustrated in figure 1 the structural representation of substrate supporting plate, this substrate supporting plate comprise substrate slice step 1, stop thermal radiation annulus step 2, restriction stop that 3, three steps of step that thermal radiation annulus moves are ring structure, this substrate supporting plate is a manhole; The step 2 that stops thermal radiation annulus stops between the step 3 that thermal radiation annulus moves in the step 1 of substrate slice and restriction; The step 1 of described substrate slice, stop that the step 2 of thermal radiation annulus, restriction stop that the step 3 that thermal radiation annulus moves is the ledge structures centered by manhole; This substrate supporting plate is formed by mechanical workout by a complete molybdenum plate, forms three steps on molybdenum plate surface by Milling Process; The height of three steps and step radius are determined according to add substrate dimension.
The making processes of this structure is, first utilizes the method for line cutting, cuts out the manhole of the step 1 of substrate slice on molybdenum plate; Then utilize accurate machining center (CNC) to mill out the circular table of the step 1 of substrate slice; After step 1 completes, then mill out the circular table of the step 2 that stops thermal radiation annulus; Restriction stops that the table top of the step 3 that thermal radiation annulus moves is made up of the surface of molybdenum plate, does not need cutting.
Step 1 width of placing substrate slice can be 0.8mm～1.5mm, and thickness can be 0.8mm～1.2mm, places the interior ring diameter of step 1 annulus of substrate slice than the little 1mm～2mm of substrate slice diameter that needs to place; Step 2 width that stop thermal radiation annulus can be 1.8mm～2.2mm, and thickness can be 2mm～2.5mm; Restriction stops that step 3 thickness of thermal radiation annulus can be 1.7mm～2.2mm.
Grow supporting plates as example taking the 6 inch substrate slices that are applied in MBE equipment, comprise above-mentioned three steps, step 1 width of substrate slice is 1mm, and thickness is 1mm; Step 2 width that stop thermal radiation annulus are 2mm, and thickness is 2mm; Restriction stops that step 3 thickness that thermal radiation annulus moves are 2mm; The interior ring diameter of step 1 annulus of placing substrate is 148.5mm.
This utility model, compared with traditional substrate growth supporting plate, has increased the utilized area of epitaxial wafer, has reduced the pollution to substrate surface, has improved quality and yield rate.
Claims (2)
1. the substrate supporting plate in a molecular beam epitaxy full-scale plant, it is characterized in that: this substrate supporting plate comprise substrate slice step (1), stop that the step (2) of thermal radiation annulus, restriction stop the step (3) that thermal radiation annulus moves, three steps are ring structure, and this substrate supporting plate is a manhole; The step (2) that stops thermal radiation annulus stops between the step (3) that thermal radiation annulus moves in the step (1) of substrate slice and restriction; The step (1) of described substrate slice, stop that the step (2) of thermal radiation annulus, restriction stop that the step (3) that thermal radiation annulus moves is the ledge structure centered by manhole.
2. the substrate supporting plate in a kind of molecular beam epitaxy full-scale plant according to claim 1, is characterized in that: this substrate supporting plate is formed by mechanical workout by a complete molybdenum plate, forms three steps on molybdenum plate surface by Milling Process; The height of three steps and step radius are determined according to add substrate dimension.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201420043728.8U CN203728962U (en) | 2014-01-23 | 2014-01-23 | Substrate supporting plate in molecular beam epitaxial large-scale production device |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201420043728.8U CN203728962U (en) | 2014-01-23 | 2014-01-23 | Substrate supporting plate in molecular beam epitaxial large-scale production device |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN203728962U true CN203728962U (en) | 2014-07-23 |
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Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201420043728.8U Expired - Lifetime CN203728962U (en) | 2014-01-23 | 2014-01-23 | Substrate supporting plate in molecular beam epitaxial large-scale production device |
Country Status (1)
| Country | Link |
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| CN (1) | CN203728962U (en) |
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN105525344A (en) * | 2015-12-23 | 2016-04-27 | 中国科学院深圳先进技术研究院 | Seed crystal tray and base station assembly for diamond monocrystal homoepitaxy, and application thereof |
| CN109616439A (en) * | 2018-11-19 | 2019-04-12 | 中国电子科技集团公司第十研究所 | A kind of fixed device of substrate material and fixing means |
| CN111690911A (en) * | 2020-06-30 | 2020-09-22 | 成都晔凡科技有限公司 | Bearing device |
-
2014
- 2014-01-23 CN CN201420043728.8U patent/CN203728962U/en not_active Expired - Lifetime
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN105525344A (en) * | 2015-12-23 | 2016-04-27 | 中国科学院深圳先进技术研究院 | Seed crystal tray and base station assembly for diamond monocrystal homoepitaxy, and application thereof |
| CN109616439A (en) * | 2018-11-19 | 2019-04-12 | 中国电子科技集团公司第十研究所 | A kind of fixed device of substrate material and fixing means |
| CN111690911A (en) * | 2020-06-30 | 2020-09-22 | 成都晔凡科技有限公司 | Bearing device |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| C14 | Grant of patent or utility model | ||
| GR01 | Patent grant | ||
| CP03 | Change of name, title or address |
Address after: No.28 factory building, supporting industrial park, export processing zone, NO.666, Jianlin Road, high tech Zone, Suzhou City, Jiangsu Province Patentee after: Xinlei semiconductor technology (Suzhou) Co.,Ltd. Address before: 215151 plant D-1, export processing zone, No. 20, Datong Road, Suzhou City, Jiangsu Province Patentee before: EPI SOLUTION TECHNOLOGY CO.,LTD. |
|
| CP03 | Change of name, title or address | ||
| CX01 | Expiry of patent term |
Granted publication date: 20140723 |
|
| CX01 | Expiry of patent term |