CN203768486U - Substrate growth pallet with cut edge of molecular beam epitaxy (MBE) large-scale production equipment - Google Patents
Substrate growth pallet with cut edge of molecular beam epitaxy (MBE) large-scale production equipment Download PDFInfo
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- CN203768486U CN203768486U CN201420044141.9U CN201420044141U CN203768486U CN 203768486 U CN203768486 U CN 203768486U CN 201420044141 U CN201420044141 U CN 201420044141U CN 203768486 U CN203768486 U CN 203768486U
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- substrate
- trimming
- supporting plate
- pallet
- growth
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- 239000000758 substrate Substances 0.000 title claims abstract description 87
- 230000012010 growth Effects 0.000 title claims abstract description 25
- 238000001451 molecular beam epitaxy Methods 0.000 title claims abstract description 22
- 238000011031 large-scale manufacturing process Methods 0.000 title abstract 2
- 230000005855 radiation Effects 0.000 claims abstract description 24
- ZOKXTWBITQBERF-UHFFFAOYSA-N Molybdenum Chemical compound [Mo] ZOKXTWBITQBERF-UHFFFAOYSA-N 0.000 claims abstract description 11
- 229910052750 molybdenum Inorganic materials 0.000 claims abstract description 11
- 239000011733 molybdenum Substances 0.000 claims abstract description 11
- 230000001788 irregular Effects 0.000 claims abstract description 7
- 238000009966 trimming Methods 0.000 claims description 53
- 238000004519 manufacturing process Methods 0.000 abstract description 6
- 239000004065 semiconductor Substances 0.000 abstract description 4
- 230000000903 blocking effect Effects 0.000 abstract 2
- 238000003754 machining Methods 0.000 abstract 1
- 238000005516 engineering process Methods 0.000 description 7
- 238000000407 epitaxy Methods 0.000 description 5
- 230000007547 defect Effects 0.000 description 3
- 238000000034 method Methods 0.000 description 3
- 239000002245 particle Substances 0.000 description 3
- 238000005520 cutting process Methods 0.000 description 2
- 238000010586 diagram Methods 0.000 description 2
- 230000009286 beneficial effect Effects 0.000 description 1
- 230000002860 competitive effect Effects 0.000 description 1
- 238000009776 industrial production Methods 0.000 description 1
- 239000000463 material Substances 0.000 description 1
- 238000003801 milling Methods 0.000 description 1
- 238000005457 optimization Methods 0.000 description 1
- 238000002360 preparation method Methods 0.000 description 1
- 230000002035 prolonged effect Effects 0.000 description 1
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- Physical Deposition Of Substances That Are Components Of Semiconductor Devices (AREA)
Abstract
The utility model relates to a substrate growth pallet with a cut edge of molecular beam epitaxy (MBE) large-scale production equipment. The pallet comprises a step for placing a substrate, a step for placing a heat radiation blocking circular ring, a step for limiting the movement of a heat radiation blocking circular ring and a cut edge, wherein the three steps of the pallet are of an integer, the middle of the pallet is provided with an irregular through hole with a straight-line cut edge, and the pallet is formed through machining a complete molybdenum plate. Meanwhile, the possible sliding of the substrate on the pallet during growth is restricted by the cut edge, so that scratches of the surface of an epitaxial wafer are reduced; the friction between the substrate and the pallet is reduced, so that the generation of surface particulate matters of the epitaxial wafer is reduced, the pollution and damage to the surface of the substrate caused by the pallet are reduced, the available area of the semiconductor substrate subjected to MBE growth is increased, and then, the production cost is reduced.
Description
Technical field
The utility model relates to a kind of substrate with trimming growth supporting plate, belongs to field of semiconductor devices, relate in particular to a kind of in molecular beam epitaxy full-scale plant the substrate growth supporting plate with trimming.
Background technology
Molecular beam epitaxy (MBE) technology is a kind of epitaxy technology of multichip semiconductor layer film of the atomic shell order of magnitude precision of growing in semiconducter substrate, at the beginning of being born, is mainly used in scientific research.With respect to other epitaxy technology, the epitaxy speed of MBE relatively slowly and single can growing epitaxial chip size and the shortcoming such as limited amount, limited its application in industrial production.Along with the progressively development of MBE technology, quite ripe for the MBE technology of 4 inch substrates, and the semiconductor epitaxial material of being produced by MBE technology is widely used in electronic industry.But, 4 inch substrates are being carried out finding in MBE production: in conventional MBE equipment, 4 inch substrates of substrate supporting plate carrying are when carrying out epitaxy, due to substrate supporting plate fast rotational in epitaxial growth, be placed on substrate on conventional step cutting pattern relative to also random rotation occurring, therefore can on epitaxial wafer surface, produce cut and increase surface particles thing.In addition, because 4 inch substrates itself have directed trimming, this straight flange does not directly contact with step cutting pattern, forms one and leaks hot hole.Therefore, different thermal environments can be experienced near region epitaxial wafer trimming, causes thermograde, and then affects the homogeneity of epitaxial wafer quality.Owing to substrate being put in MBE production at present to the process of supporting plate, by artificial manual operations, completed, in the time of in substrate is positioned over to conventional round pallet, be difficult to guarantee the fixing of the every relative blade position of substrate trimming.In order to guarantee the fixing of substrate trimming and supporting plate relative position, and realize the effective control to epitaxial wafer homogeneity and defect simultaneously, therefore must be optimized improvement to the substrate supporting plate of the conventional shape in MBE equipment, the utility model proposes for this reason a kind of in molecular beam epitaxy full-scale plant the substrate growth supporting plate with trimming, by trimming, slip and friction that substrate may occur on supporting plate have been limited, thereby reduced the generation of cut and the surface particles thing on epitaxial wafer surface, improved the utilized area of epitaxial wafer and reduced production cost.
Summary of the invention
The purpose of this utility model be to provide a kind of in molecular beam epitaxy full-scale plant the substrate growth supporting plate with trimming, by add trimming on the step of substrate slice, with this, realize aborning substrate slice is positioned to placement, guarantee every substrate position identical on supporting plate, in guaranteeing to produce, substrate trimming and supporting plate relative position are fixed, thereby realize the inhomogeneity controlled production of epitaxial wafer.
For achieving the above object, the technical solution adopted in the utility model be a kind of in molecular beam epitaxy full-scale plant the substrate growth supporting plate with trimming; This supporting plate comprise place substrate slice step, place and to stop that the step of thermal radiation annulus, restriction stop step, the trimming that thermal radiation annulus moves; Three steps of described supporting plate are as a whole, in the middle of this supporting plate, are the irregular through hole with straight line trimming, and this supporting plate forms by mechanical workout mode on a complete molybdenum plate; Three steps of this growth of substrate with trimming supporting plate are annular, the stepped annular structures of placing substrate slice is arc and with two kinds of structures of trimming straight line, the size of trimming straight line is determined by required trimming substrate straight-line dimension, places arc and the trimming substrate arc consistent size of the step of substrate slice; The step that placement stops thermal radiation annulus is being placed between the step that the step of substrate slice and restriction stop that thermal radiation annulus moves; Restriction stops that the step that thermal radiation annulus moves is molybdenum plate surface; Described substrate is placed in the irregular through hole with straight line in the middle of this growth of substrate with trimming supporting plate.
Compared with prior art, the utlity model has following beneficial effect.
1, compare the substrate supporting plate of conventional shape, the relative position of substrate trimming in supporting plate fixed, thereby it is controlled to realize homogeneity and the defect of epitaxial wafer, is conducive in scale operation the batch assessment of extension tablet quality and improves.
2, because trimming has limited the slip that in process of growth, substrate may occur on supporting plate and friction, thereby reduced the generation of cut and the surface particles thing on epitaxial wafer surface, reduced supporting plate to the pollution on substrate slice surface and damage, the utilized area that has improved epitaxial wafer, has reduced production cost.
3,, by the shape of substrate supporting plate in optimization design MBE equipment, guarantee the fixing of substrate trimming and supporting plate relative position in producing, thereby realize effective control of epitaxy being prolonged to sheet homogeneity and defect at home and abroad, raising industrialization competitive power.
Accompanying drawing explanation
Fig. 1 is the substrate growth support board structure schematic diagram with trimming.
In figure: 1, place the step of substrate slice, 2, place the step that stops thermal radiation annulus, 3, restriction stops the step that thermal radiation annulus moves, 10, trimming.
Embodiment
Below with reference to accompanying drawing, the utility model is described in further detail.
Be illustrated in figure 1 the substrate growth support board structure schematic diagram with trimming, this supporting plate comprise places substrate slice step 1, place stop thermal radiation annulus step 2, limit and stop step 3, the trimming 10 that thermal radiation annulus moves; Three steps of described supporting plate are as a whole, in the middle of this supporting plate, are the irregular through hole with straight line trimming, and this supporting plate forms by mechanical workout mode on a complete molybdenum plate; Three steps of this growth of substrate with trimming supporting plate are annular, step 1 ring structure of placing substrate slice is arc and with two kinds of structures of trimming 10 straight lines, the size of trimming 10 straight lines is determined by required trimming substrate straight-line dimension, places arc and the trimming substrate arc consistent size of the step 1 of substrate slice; The step 2 that placement stops thermal radiation annulus is being placed between the step 3 that the step 1 of substrate slice and restriction stop that thermal radiation annulus moves; Restriction stops that the step 3 that thermal radiation annulus moves is molybdenum plate surface; Described substrate is placed in the irregular through hole with straight line in the middle of this growth of substrate with trimming 10 supporting plate.
The preparation process of this growth of substrate with trimming supporting plate is that first, the method for utilizing line to cut cuts out and places the step 1 of substrate slice with the through hole of straight flange on molybdenum plate; Then, utilize accurate machining center (CNC) along short transverse, to mill out step 1 with the table top of straight flange gradually from molybdenum plate surface; After step 1 completes, according to placing, stop that the step 2 of thermal radiation annulus needs milling diameter dimension, continue to mill out along short transverse the circular table of placing the step 2 that stops thermal radiation annulus; Restriction stops that step 3 surfaces that thermal radiation annulus moves consist of the surface of molybdenum plate own, do not need mechanical workout.
According to the shape and size that need to place substrate, suitably adjust pallet size, by mechanical workout mode, on complete molybdenum plate, directly cut desired shape supporting plate; According to the substrate supporting plate of 4 inch～6 inch substrate slice growths in MBE equipment, in the utility model, place substrate slice step 1 consistent with trimming 10 width, can be 0.8mm～1.5mm; Placing substrate slice step 1 and trimming 10 consistency of thickness, can be 0.8mm～1.2mm; Placing ring radius in step 1 annulus of substrate slice can be 49mm～49.25mm, and correspondingly, border can be apart 46.3mm～46.55mm with the center of circle inside trimming 10 places.
The substrate supporting plate that is applied to 4 inch substrate slices growths in MBE equipment of take is example, and step 1 and trimming 10 width of placing substrate slice are 1mm, and thickness is 1mm; Placement stops that step 2 width of thermal radiation annulus are 2mm, and thickness is 2mm; Restriction stops that step 3 thickness that thermal radiation annulus moves are 2mm; The interior ring radius of step 1 of placing substrate slice is 49mm, and border is apart 46.3mm with the center of circle inside trimming 10 places.
Because conventional 4 inch substrates are not the circular substrate of standard, but on round edge with the trimming of certain size, by increase trimming on ring-shaped step, the supporting plate groove of placement standard 4 inch substrates is mated completely with substrate slice pattern, thereby facilitated the location of 4 inch substrates to place, and prevented substrate slice issuable rotation on supporting plate, thereby reduced the surface imperfection that epitaxial wafer causes because of sliding friction and the ununiformity of being heated, improved quality and the yield rate of product.
Claims (2)
- In molecular beam epitaxy full-scale plant with a substrate growth supporting plate for trimming, it is characterized in that: this supporting plate comprise places substrate slice step (1), place stop thermal radiation annulus step (2), limit and stop step (3), the trimming (10) that thermal radiation annulus moves; Three steps of described supporting plate are as a whole, in the middle of this supporting plate, are the irregular through hole with straight line trimming, and this supporting plate forms by mechanical workout mode on a complete molybdenum plate; Three steps of this growth of substrate with trimming supporting plate are annular, step (1) ring structure of placing substrate slice is arc and with two kinds of structures of trimming (10) straight line, the size of trimming (10) straight line is determined by required trimming substrate straight-line dimension, places arc and the trimming substrate arc consistent size of the step (1) of substrate slice; Placement stops that the step (2) of thermal radiation annulus is positioned to place the step (1) of substrate slice and limit and stops between the step (3) that thermal radiation annulus moves; Restriction stops that the step (3) that thermal radiation annulus moves is molybdenum plate surface.
- In a kind of molecular beam epitaxy full-scale plant according to claim 1 with the substrate growth supporting plate of trimming, it is characterized in that: described substrate be placed in should the irregular through hole with straight line of the growth of the substrate with trimming (10) supporting plate centre in.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201420044141.9U CN203768486U (en) | 2014-01-23 | 2014-01-23 | Substrate growth pallet with cut edge of molecular beam epitaxy (MBE) large-scale production equipment |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201420044141.9U CN203768486U (en) | 2014-01-23 | 2014-01-23 | Substrate growth pallet with cut edge of molecular beam epitaxy (MBE) large-scale production equipment |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN203768486U true CN203768486U (en) | 2014-08-13 |
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| Application Number | Title | Priority Date | Filing Date |
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| CN201420044141.9U Expired - Lifetime CN203768486U (en) | 2014-01-23 | 2014-01-23 | Substrate growth pallet with cut edge of molecular beam epitaxy (MBE) large-scale production equipment |
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Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN105525344A (en) * | 2015-12-23 | 2016-04-27 | 中国科学院深圳先进技术研究院 | Seed crystal tray and base station assembly for diamond monocrystal homoepitaxy, and application thereof |
-
2014
- 2014-01-23 CN CN201420044141.9U patent/CN203768486U/en not_active Expired - Lifetime
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN105525344A (en) * | 2015-12-23 | 2016-04-27 | 中国科学院深圳先进技术研究院 | Seed crystal tray and base station assembly for diamond monocrystal homoepitaxy, and application thereof |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| C14 | Grant of patent or utility model | ||
| GR01 | Patent grant | ||
| CP03 | Change of name, title or address |
Address after: No.28 factory building, supporting industrial park, export processing zone, NO.666, Jianlin Road, high tech Zone, Suzhou City, Jiangsu Province Patentee after: Xinlei semiconductor technology (Suzhou) Co.,Ltd. Address before: 215151 plant D-1, export processing zone, No. 20, Datong Road, Suzhou City, Jiangsu Province Patentee before: EPI SOLUTION TECHNOLOGY CO.,LTD. |
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| CP03 | Change of name, title or address | ||
| CX01 | Expiry of patent term |
Granted publication date: 20140813 |
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| CX01 | Expiry of patent term |