CN203707402U - 电连接器 - Google Patents
电连接器 Download PDFInfo
- Publication number
- CN203707402U CN203707402U CN201320791167.5U CN201320791167U CN203707402U CN 203707402 U CN203707402 U CN 203707402U CN 201320791167 U CN201320791167 U CN 201320791167U CN 203707402 U CN203707402 U CN 203707402U
- Authority
- CN
- China
- Prior art keywords
- liquid metal
- electronic component
- electric
- electric connector
- hole
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Fee Related
Links
- 229910001338 liquidmetal Inorganic materials 0.000 claims abstract description 113
- 239000012212 insulator Substances 0.000 claims abstract description 65
- 239000004020 conductor Substances 0.000 claims abstract description 52
- 230000001427 coherent effect Effects 0.000 claims abstract description 14
- 238000002844 melting Methods 0.000 claims abstract description 8
- 230000008018 melting Effects 0.000 claims abstract description 8
- 239000002184 metal Substances 0.000 claims description 25
- 229910052751 metal Inorganic materials 0.000 claims description 22
- 239000002245 particle Substances 0.000 claims description 19
- 229920002379 silicone rubber Polymers 0.000 claims description 18
- 239000004945 silicone rubber Substances 0.000 claims description 18
- GYHNNYVSQQEPJS-UHFFFAOYSA-N Gallium Chemical compound [Ga] GYHNNYVSQQEPJS-UHFFFAOYSA-N 0.000 claims description 17
- 229910052733 gallium Inorganic materials 0.000 claims description 17
- ATJFFYVFTNAWJD-UHFFFAOYSA-N Tin Chemical compound [Sn] ATJFFYVFTNAWJD-UHFFFAOYSA-N 0.000 claims description 15
- 239000000463 material Substances 0.000 claims description 15
- 229910052718 tin Inorganic materials 0.000 claims description 15
- 238000006748 scratching Methods 0.000 claims description 8
- 230000002393 scratching effect Effects 0.000 claims description 8
- 229910045601 alloy Inorganic materials 0.000 claims description 7
- 239000000956 alloy Substances 0.000 claims description 7
- 229910000807 Ga alloy Inorganic materials 0.000 claims description 5
- 229910001092 metal group alloy Inorganic materials 0.000 claims description 5
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims description 4
- 230000006835 compression Effects 0.000 claims description 4
- 238000007906 compression Methods 0.000 claims description 4
- 239000006260 foam Substances 0.000 claims description 4
- 239000000741 silica gel Substances 0.000 claims description 4
- 229910002027 silica gel Inorganic materials 0.000 claims description 4
- 230000000694 effects Effects 0.000 abstract description 6
- 230000005540 biological transmission Effects 0.000 abstract description 4
- 238000004891 communication Methods 0.000 abstract description 3
- 238000009413 insulation Methods 0.000 abstract 1
- 150000002739 metals Chemical class 0.000 description 5
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 description 4
- 238000010586 diagram Methods 0.000 description 4
- 230000002349 favourable effect Effects 0.000 description 4
- 239000007788 liquid Substances 0.000 description 4
- 229920001971 elastomer Polymers 0.000 description 3
- 239000000806 elastomer Substances 0.000 description 3
- 229910052738 indium Inorganic materials 0.000 description 3
- APFVFJFRJDLVQX-UHFFFAOYSA-N indium atom Chemical compound [In] APFVFJFRJDLVQX-UHFFFAOYSA-N 0.000 description 3
- 229920000260 silastic Polymers 0.000 description 3
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 2
- 230000015572 biosynthetic process Effects 0.000 description 2
- 229910052802 copper Inorganic materials 0.000 description 2
- 239000010949 copper Substances 0.000 description 2
- 238000002788 crimping Methods 0.000 description 2
- 239000000945 filler Substances 0.000 description 2
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 2
- 229910052737 gold Inorganic materials 0.000 description 2
- 239000010931 gold Substances 0.000 description 2
- 229910052759 nickel Inorganic materials 0.000 description 2
- 230000009286 beneficial effect Effects 0.000 description 1
- 239000004568 cement Substances 0.000 description 1
- 239000011248 coating agent Substances 0.000 description 1
- 238000000576 coating method Methods 0.000 description 1
- 230000005611 electricity Effects 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- YZZNJYQZJKSEER-UHFFFAOYSA-N gallium tin Chemical compound [Ga].[Sn] YZZNJYQZJKSEER-UHFFFAOYSA-N 0.000 description 1
- 238000000034 method Methods 0.000 description 1
- 239000004033 plastic Substances 0.000 description 1
- 238000005096 rolling process Methods 0.000 description 1
- 229910002058 ternary alloy Inorganic materials 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
- H05K3/00—Apparatus or processes for manufacturing printed circuits
- H05K3/30—Assembling printed circuits with electric components, e.g. with resistor
- H05K3/32—Assembling printed circuits with electric components, e.g. with resistor electrically connecting electric components or wires to printed circuits
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/48—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor
- H01L23/488—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor consisting of soldered or bonded constructions
- H01L23/498—Leads, i.e. metallisations or lead-frames on insulating substrates, e.g. chip carriers
- H01L23/49827—Via connections through the substrates, e.g. pins going through the substrate, coaxial cables
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/48—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor
- H01L23/488—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor consisting of soldered or bonded constructions
- H01L23/498—Leads, i.e. metallisations or lead-frames on insulating substrates, e.g. chip carriers
- H01L23/49866—Leads, i.e. metallisations or lead-frames on insulating substrates, e.g. chip carriers characterised by the materials
- H01L23/49883—Leads, i.e. metallisations or lead-frames on insulating substrates, e.g. chip carriers characterised by the materials the conductive materials containing organic materials or pastes, e.g. for thick films
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
- H01L24/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
- H01L24/81—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a bump connector
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01R—ELECTRICALLY-CONDUCTIVE CONNECTIONS; STRUCTURAL ASSOCIATIONS OF A PLURALITY OF MUTUALLY-INSULATED ELECTRICAL CONNECTING ELEMENTS; COUPLING DEVICES; CURRENT COLLECTORS
- H01R13/00—Details of coupling devices of the kinds covered by groups H01R12/70 or H01R24/00 - H01R33/00
- H01R13/02—Contact members
- H01R13/03—Contact members characterised by the material, e.g. plating, or coating materials
- H01R13/035—Plated dielectric material
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/10—Bump connectors; Manufacturing methods related thereto
- H01L2224/12—Structure, shape, material or disposition of the bump connectors prior to the connecting process
- H01L2224/13—Structure, shape, material or disposition of the bump connectors prior to the connecting process of an individual bump connector
- H01L2224/13001—Core members of the bump connector
- H01L2224/13099—Material
- H01L2224/131—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof
- H01L2224/13101—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof the principal constituent melting at a temperature of less than 400°C
- H01L2224/13111—Tin [Sn] as principal constituent
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/10—Bump connectors; Manufacturing methods related thereto
- H01L2224/15—Structure, shape, material or disposition of the bump connectors after the connecting process
- H01L2224/16—Structure, shape, material or disposition of the bump connectors after the connecting process of an individual bump connector
- H01L2224/161—Disposition
- H01L2224/16151—Disposition the bump connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
- H01L2224/16221—Disposition the bump connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
- H01L2224/16225—Disposition the bump connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation
- H01L2224/16235—Disposition the bump connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation the bump connector connecting to a via metallisation of the item
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
- H01L2224/81—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a bump connector
- H01L2224/811—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a bump connector the bump connector being supplied to the parts to be connected in the bonding apparatus
- H01L2224/81101—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a bump connector the bump connector being supplied to the parts to be connected in the bonding apparatus as prepeg comprising a bump connector, e.g. provided in an insulating plate member
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
- H01L2224/81—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a bump connector
- H01L2224/8138—Bonding interfaces outside the semiconductor or solid-state body
- H01L2224/81399—Material
- H01L2224/814—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof
- H01L2224/81401—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof the principal constituent melting at a temperature of less than 400°C
- H01L2224/81405—Gallium [Ga] as principal constituent
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
- H01L2224/81—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a bump connector
- H01L2224/8138—Bonding interfaces outside the semiconductor or solid-state body
- H01L2224/81399—Material
- H01L2224/814—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof
- H01L2224/81401—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof the principal constituent melting at a temperature of less than 400°C
- H01L2224/81411—Tin [Sn] as principal constituent
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
- H01L2224/81—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a bump connector
- H01L2224/8138—Bonding interfaces outside the semiconductor or solid-state body
- H01L2224/81399—Material
- H01L2224/81494—Material with a principal constituent of the material being a liquid not provided for in groups H01L2224/814 - H01L2224/81491
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
- H01L2224/81—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a bump connector
- H01L2224/8138—Bonding interfaces outside the semiconductor or solid-state body
- H01L2224/81399—Material
- H01L2224/81498—Material with a principal constituent of the material being a combination of two or more materials in the form of a matrix with a filler, i.e. being a hybrid material, e.g. segmented structures, foams
- H01L2224/81499—Material of the matrix
- H01L2224/815—Material of the matrix with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof
- H01L2224/81501—Material of the matrix with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof the principal constituent melting at a temperature of less than 400°C
- H01L2224/81505—Gallium [Ga] as principal constituent
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
- H01L2224/81—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a bump connector
- H01L2224/8138—Bonding interfaces outside the semiconductor or solid-state body
- H01L2224/81399—Material
- H01L2224/81498—Material with a principal constituent of the material being a combination of two or more materials in the form of a matrix with a filler, i.e. being a hybrid material, e.g. segmented structures, foams
- H01L2224/81499—Material of the matrix
- H01L2224/81594—Material of the matrix with a principal constituent of the material being a liquid not provided for in groups H01L2224/815 - H01L2224/81591
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
- H01L2224/81—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a bump connector
- H01L2224/8138—Bonding interfaces outside the semiconductor or solid-state body
- H01L2224/81399—Material
- H01L2224/81498—Material with a principal constituent of the material being a combination of two or more materials in the form of a matrix with a filler, i.e. being a hybrid material, e.g. segmented structures, foams
- H01L2224/81598—Fillers
- H01L2224/81599—Base material
- H01L2224/8169—Base material with a principal constituent of the material being a polymer, e.g. polyester, phenolic based polymer, epoxy
- H01L2224/81691—The principal constituent being an elastomer, e.g. silicones, isoprene, neoprene
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
- H01L2224/81—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a bump connector
- H01L2224/8138—Bonding interfaces outside the semiconductor or solid-state body
- H01L2224/81399—Material
- H01L2224/81498—Material with a principal constituent of the material being a combination of two or more materials in the form of a matrix with a filler, i.e. being a hybrid material, e.g. segmented structures, foams
- H01L2224/81598—Fillers
- H01L2224/81699—Coating material
- H01L2224/817—Coating material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof
- H01L2224/81701—Coating material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof the principal constituent melting at a temperature of less than 400°C
- H01L2224/81711—Tin [Sn] as principal constituent
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
- H01L2224/81—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a bump connector
- H01L2224/819—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a bump connector with the bump connector not providing any mechanical bonding
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/48—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor
- H01L23/488—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor consisting of soldered or bonded constructions
- H01L23/498—Leads, i.e. metallisations or lead-frames on insulating substrates, e.g. chip carriers
- H01L23/49811—Additional leads joined to the metallisation on the insulating substrate, e.g. pins, bumps, wires, flat leads
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
- H01L24/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L24/10—Bump connectors ; Manufacturing methods related thereto
- H01L24/12—Structure, shape, material or disposition of the bump connectors prior to the connecting process
- H01L24/13—Structure, shape, material or disposition of the bump connectors prior to the connecting process of an individual bump connector
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
- H01L24/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L24/10—Bump connectors ; Manufacturing methods related thereto
- H01L24/15—Structure, shape, material or disposition of the bump connectors after the connecting process
- H01L24/16—Structure, shape, material or disposition of the bump connectors after the connecting process of an individual bump connector
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01R—ELECTRICALLY-CONDUCTIVE CONNECTIONS; STRUCTURAL ASSOCIATIONS OF A PLURALITY OF MUTUALLY-INSULATED ELECTRICAL CONNECTING ELEMENTS; COUPLING DEVICES; CURRENT COLLECTORS
- H01R13/00—Details of coupling devices of the kinds covered by groups H01R12/70 or H01R24/00 - H01R33/00
- H01R13/02—Contact members
- H01R13/22—Contacts for co-operating by abutting
- H01R13/24—Contacts for co-operating by abutting resilient; resiliently-mounted
- H01R13/2407—Contacts for co-operating by abutting resilient; resiliently-mounted characterized by the resilient means
- H01R13/2414—Contacts for co-operating by abutting resilient; resiliently-mounted characterized by the resilient means conductive elastomers
-
- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
- H05K2201/00—Indexing scheme relating to printed circuits covered by H05K1/00
- H05K2201/03—Conductive materials
- H05K2201/0302—Properties and characteristics in general
- H05K2201/0314—Elastomeric connector or conductor, e.g. rubber with metallic filler
-
- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
- H05K2201/00—Indexing scheme relating to printed circuits covered by H05K1/00
- H05K2201/10—Details of components or other objects attached to or integrated in a printed circuit board
- H05K2201/10227—Other objects, e.g. metallic pieces
- H05K2201/10378—Interposers
-
- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
- H05K2201/00—Indexing scheme relating to printed circuits covered by H05K1/00
- H05K2201/10—Details of components or other objects attached to or integrated in a printed circuit board
- H05K2201/10613—Details of electrical connections of non-printed components, e.g. special leads
- H05K2201/10621—Components characterised by their electrical contacts
- H05K2201/10674—Flip chip
-
- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
- H05K2201/00—Indexing scheme relating to printed circuits covered by H05K1/00
- H05K2201/10—Details of components or other objects attached to or integrated in a printed circuit board
- H05K2201/10613—Details of electrical connections of non-printed components, e.g. special leads
- H05K2201/10954—Other details of electrical connections
- H05K2201/10962—Component not directly connected to the PCB
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Computer Hardware Design (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Coupling Device And Connection With Printed Circuit (AREA)
Abstract
本实用新型公开了一种电连接器,用以电性连接一第一电子元件至一第二电子元件,包括设有多个收容孔的一绝缘本体,每一收容孔内收容有一导电体,导电体包括一弹性绝缘体和包覆于弹性绝缘体表面的低熔点的液态金属,液态金属于第一电子元件和第二电子元件之间形成连贯的导电路径。本实用新型利用液态金属在第一电子元件和第二电子元件之间形成连贯的导电路径,在确保导电体具有良好弹性的同时,可避免导电路径因受芯片模块压制而断开的现象,保证芯片模块与电路板之间稳定的电性连接,同时利用液态金属进行电性传输,液态金属的阻抗小,能够有效降低电连接器的阻抗,保证电流的正常传输,提供清晰、稳定的通讯效果。
Description
技术领域
本实用新型涉及一种电连接器,尤其是指一种电性连接一芯片模块至一电路板的电连接器。
背景技术
现有一种电连接器用于实现芯片模块与电路板的电性连接,例如中国专利CN200620059085.1中所述的,这种电连接器包括具有若干收容孔的绝缘本体和收容于收容孔中的导电体,所述导电体包括弹性体,弹性体表面采用物理镀膜方式或其它镀膜方式镀设有铜、镍、金等金属层,利用其外的金属层实现芯片模块与电路板之间的电性通路。由于上述铜、镍、金等形成的金属层较硬,在导电体受芯片模块压制时,上述金属层极容易产生龟裂,导致弹性体表面的电性通路断开,影响芯片模块与电路板之间的电性连接。
因此,有必要设计一种改良的电连接器,以克服上述问题。
发明内容
本实用新型的创作目的在于提供一种可保证芯片模块与电路板之间稳定电性连接通路的电连接器。
为了达到上述目的,本实用新型采用如下技术方案:
一种电连接器,用以电性连接一第一电子元件至一第二电子元件,包括设有多个收容孔的一绝缘本体,每一所述收容孔内收容有一导电体,所述导电体包括一弹性绝缘体和包覆于所述弹性绝缘体表面的低熔点的液态金属,所述液态金属于所述第一电子元件和所述第二电子元件之间形成连贯的导电路径。
进一步,所述弹性绝缘体为硅橡胶颗粒。所述液态金属涂覆于所述弹性绝缘体表面形成所述导电路径。所述导电体包括多个弹性绝缘体,每一所述弹性绝缘体的表面由所述液态金属包覆,且全部弹性绝缘体表面的液态金属相互连通。
作为一种实施方式,所述导电体为浸有所述液态金属的发泡材料,所述发泡材料的内部间隙填充有液态金属,所述发泡材料的表面包覆有液态金属与内部的液态金属连通。具体地,所述发泡材料可以是泡棉或发泡硅胶。
进一步,所述绝缘本体的至少一个表面设有一覆盖层,所述覆盖层对应所述收容孔的位置处开设有直径小于收容孔直径的至少一通孔,部分液态金属露出所述通孔与所述第一电子元件或所述第二电子元件接触。所述弹性绝缘体的直径大于所述通孔的直径。
所述液态金属的熔点低于40°C。优选地,所述液态金属为镓金属或者镓合金。
所述导电体分别与所述第一电子元件和所述第二电子元件压缩接触。
进一步,所述弹性绝缘体表面设有易被所述液态金属浸润的一金属层,所述液态金属设于所述金属层表面。所述金属层为锡层。
进一步,所述弹性绝缘体设有贯穿孔,所述液态金属于所述贯穿孔内形成所述导电路径。
进一步,所述弹性绝缘体的表面粗糙。所述弹性绝缘体表面设有凹槽或凹洞。
进一步,所述弹性绝缘体内掺杂有导电物质。所述导电物质可与镓形成合金。
进一步,所述收容孔一端设有渐缩的勾持部,所述勾持部勾持于所述导电体。
进一步,所述弹性绝缘体突出于绝缘本体的至少一个表面。所述弹性绝缘体突出部分的尺寸大于收容孔的开口。
与现有技术相比,本实用新型通过在弹性绝缘体的表面设置低熔点的液态金属,利用所述液态金属在所述第一电子元件和所述第二电子元件之间形成连贯的导电路径,在确保导电体具有良好弹性的同时,可避免所述导电路径因受芯片模块压制而断开的现象,保证芯片模块与电路板之间稳定的电性连接,同时利用所述液态金属进行电性传输,所述液态金属的阻抗小,能够有效降低电连接器的阻抗,保证电流的正常传输,提供清晰、稳定的通讯效果。
【附图说明】
图1为本实用新型第一实施例的电连接器与电路板连接的示意图;
图2为图1中的电连接器与电路板及芯片模块连接的示意图;
图3为图2的局部放大图;
图4为可实施本实用新型的导电体形态的示意图;
图5为本实用新型第二实施例电连接器的分解示意图;
图6为图5中的电连接器与芯片模块和电路板连接的示意图。
具体实施方式的附图标号说明:
电连接器 | 100 | ||||
绝缘本体 | 1 | 收容孔 | 2 | 勾持部 | 20 |
导电体 | 3 | 弹性绝缘体 | 31 | 贯穿孔 | 310 |
凹槽、凹洞 | 311 | 突出部分 | 312 | 金属层 | 4 |
覆盖层 | 5 | 通孔 | 50 | 液态金属 | A |
芯片模块 | 200 | 锡球 | B | 电路板 | 300 |
导电垫 | C | 导电物质 | D |
【具体实施方式】
为便于更好的理解本实用新型的目的、结构、特征以及功效等,现结合附图和具体实施方式对本实用新型作进一步说明。
如图1至3所示,为本实用新型的第一实施例。本实用新型的电连接器100,用以电性连接一芯片模块200至一电路板300,其中,所述芯片模块200的底面设有锡球B,电路板300的顶面设有导电垫C。当然,所述芯片模块200的底面也可以设置导电片或者柱状的导电部(未图示)。所述电连接器100包括设有一绝缘本体1,所述绝缘本体1内设有多个收容孔2,每一所述收容孔2内收容有一导电体3。
具体而言,本实施例中的所述导电体3包括一弹性绝缘体31,其上下两端略凸出于收容孔2。所述弹性绝缘体31为由硅橡胶材料制成的一个较大的椭圆形颗粒,其具有良好的弹性,可受所述芯片模块200和所述电路板300压制产生变形,如图2和图3中所示。当然,所述弹性绝缘体31也可以是球形、圆柱形或者其它不规则形状。可设置所述弹性绝缘体31与所述收容孔2的孔壁干涉配合,或者在弹性绝缘体31上设置固持部(未图示)与收容孔2内的固持槽(未图示)相配合,以使弹性绝缘体31能够稳定的收容在收容孔2内。本实用新型的导电体3由于具有良好弹性,可将其组装至绝缘本体1的收容孔2内,在其它实施例中也可以将塑胶灌注在导电体3周围形成所述绝缘本体1。本实施例中,所述收容孔2底端的孔径渐缩形成勾持部20,所述勾持部20勾持于所述导电体3,可防止所述导电体3从收容孔2中退出。
所述弹性绝缘体31具有粗糙的外表面,其外表面设有一些凹槽或凹洞如标号311所示。弹性绝缘体31内部掺杂有可与镓金属形成合金的导电物质D,可进一步加强所述导电体3的导电效果。
本实施例中,所述弹性绝缘体31的整个外表涂覆有一层低熔点的液态金属A,所述液态金属A在弹性绝缘体31外表形成一条连贯的导电路径。本实用新型中所用低熔点的液态金属A,其熔点低于40°C 。例如,可使用熔点在29.76℃左右的镓单质金属;当然也可以使用镓合金,例如,采用比例为24.5:75.5的铟镓二元合金,其的熔点为15.7℃,或者采用铟-镓-锡比例为20.5:66.5:13.0,利用该比例调配出的铟镓锡三元合金的熔点为10.7℃。使用者可使用镓金属,或利用铟、镓、锡以及其它金属根据比例配出合金,使得在常温下,所述镓金属或者所述镓合金呈液态。所述液态金属A的阻抗小,在电流传输时,不会因阻抗消耗能量,从而保证电流传输的稳定性,电性连接效果好。
为防止相邻收容孔2中的液态金属A短路,可在所述绝缘本体1的上、下表面均设置一覆盖层5,所述覆盖层5可采用弹性绝缘的硅橡胶材料制成,其厚度非常薄,所述覆盖层5对应每一所述收容孔2的位置处开设有尺寸小于收容孔2直径的一通孔50,所述硅橡胶颗粒的最大直径大于所述通孔50的最大直径。
如图2和3中所示,所述导电体3分别与所述芯片模块200和所述电路板300压缩接触。当芯片模块200下压时,所述弹性绝缘体31上下两端分别被芯片模块200和电路板300压制,所述弹性绝缘体31能够在所述收容孔2内产生良好的弹性变形,而所述锡球B则能够与弹性绝缘体31表面的液态金属A相接触,且液态金属A与锡球B之间具有较大的接触面积,可进一步降低接触阻抗。由于所述弹性绝缘体31外表面粗糙,外表面的凹槽或凹洞311中同样由液态金属A,因而增加了液态金属A的量,可保证弹性绝缘体31表面的液态金属A的量不会因多次压接而大量减少(被锡球B粘附带走或者液态金属A被挤压流动至未受压制的位置),从而可延长电连接器100的使用寿命。所述覆盖层5则可隔绝相邻收容孔2中的液态金属A,避免相邻导电体3短路。
所述导电体3也可以是如图4的(a)~(d)所示的形状。如图4的(a)中,为了使上述液态金属A镓金属或者镓合金能够更加牢固地粘附在所述弹性绝缘体31上,在弹性绝缘体31的表面先设置有一层容易被液态金属A浸润的金属层4。例如,可以在椭圆形弹性绝缘体31的外表先镀一层锡层,再将液态金属A涂敷于锡层的外表,以此方式,所述液态金属A能够稳定地附着在锡层表面,而锡层本身是牢固定位于弹性绝缘体31外表的,因而液态金属A整体上能牢固定位在弹性绝缘体31的外表,不容易掉落,以实现稳定的电性连接功能。如图4的(b)中,弹性绝缘体31仅在上下两端部的外表包覆有一些液态金属A,中央部分则设有贯穿孔310,贯穿孔310内填充有液态金属A,液态金属A在贯穿孔310内形成连贯的导电路径。同样地,弹性绝缘体31中掺杂有导电物质D,当所述液态金属A为镓单质金属时,导电物质D可与贯穿孔310内的镓单质金属反应形成液态合金。如图4的(c)中,弹性绝缘体31的下端突出于绝缘本体1的下表面,且突出部分312的尺寸大于收容孔2的开口,所述突出部分312可对应卡固于绝缘本体1的下表面,防止导电体3在收容孔2中上下晃动。弹性绝缘体31的整个外表包覆有液态金属A以形成一条连贯的导电路径,弹性绝缘体31的中央部分开设有一个上下贯通的贯穿孔310,所述贯穿孔310内填充有液态金属A,液态金属A在贯穿孔310内形成另一条连贯的导电路径。同样地,弹性绝缘体31中掺杂有导电物质D,当所述液态金属A为镓单质金属时,导电物质D可与贯穿孔310内以及弹性绝缘体31外表的镓单质金属反应形成液态合金。如图4的(d)中,也可以设置弹性绝缘体31的上下端分别突出于绝缘本体1的上下表面,且突出部分312的尺寸大于收容孔2的开口。当然,在其它实施例中,也可以仅在所述贯穿孔310的孔壁表面设置一层液态金属A(整个贯穿孔310未被液态金属A填充满)。总而言之,本实用新型的导电体3既可以将液态金属A设置在弹性绝缘体31的外表面,也可以将液态金属A设置在弹性绝缘体31的内部表面,既可以将液态金属A设置为全部包覆所述外表面或者内部表面,也可以将液态金属A设置为部分包覆所述外表面或者内部表面,只要保证弹性绝缘体31上的液态金属A于所述芯片模块200和所述电路板300之间形成连贯的导电路径即可。
图5至图6为本实用新型的第二实施例,电连接器100包括设有多个收容孔2的绝缘本体1,每一所述收容孔2内收容有导电体3。其中所述导电体3包括多个弹性绝缘体31,以及设置在每一弹性绝缘体31表面的低熔点液态金属A,且全部弹性绝缘体31外表的液态金属A相互连通。具体而言,每一所述收容孔2内设置有一定量的液态金属A,液态金属A内填充多个细小的、具有良好弹性的硅橡胶颗粒。利用价格低廉的硅橡胶颗粒来作为填充物,可减少液态金属A的用量,有效降低成本;此外,利用多个细小的硅橡胶颗粒的表面可以有效吸附住液态金属A,使液态金属A不会大量流出收容孔2外。
进一步,为防止液态金属A流出收容孔2,可在所述绝缘本体1的上、下表面均设置一覆盖层5,所述覆盖层5可采用弹性绝缘的硅橡胶材料制成,其厚度非常薄,所述覆盖层5对应所述收容孔2的位置处开设有多个的通孔50,这些通孔50的尺寸远远小于收容孔2的直径。为防止硅橡胶颗粒从通孔50出漏出,可设置所述硅橡胶颗粒的直径大于所述通孔50的直径。所述覆盖层5也可以采用具有细小孔洞的纱网。电连接器100未受芯片模块200压制时,液态金属A稳定粘附于硅橡胶颗粒的表面,并不会从通孔50中掉落。
本实施例中的液态金属A可使用与第一实施例中基本相同的材料,具体而言,可先在绝缘本体1底面设置覆盖层5,再在所述收容孔2内置入多个细小的硅橡胶颗粒,接着往液态金属A内置入液态金属A,使得所述液态金属A填充整个收容孔2,最后在绝缘本体1顶面设置覆盖层5。
如图6中所示,当所述芯片模块200压制于电连接器100上时,绝缘本体1上下表面的覆盖层5均可产生弹性变形,收容孔2内的硅橡胶颗粒也会受挤压而产生变形,此时,收容孔2内的液态金属A因受挤压而往覆盖层5的通孔50外露出一小部分,由于露出的量非常少,露出的这部分液态金属A会因表面张力而粘附于通孔50外,并与收容孔2内的液态金属A连接在一起,同时这部分液态金属A分别与芯片模块200的锡球B以及电路板300上的导电垫C进行电性接触,以此方式,液态金属A在芯片模块200和电路板300之间形成连贯的导电路径,电连接器100与芯片模块200和电路板300实现压缩接触。
为确保液态金属A能够牢固地粘附在所述硅橡胶颗粒上,也可如第一实施例中那样在硅橡胶颗粒的表面镀一层锡层。
作为另一种实施方式(未图示),所述导电体3为浸有所述液态金属A的,所述发泡材料的内部间隙填充有液态金属A,所述发泡材料的外表面包覆有液态金属A与内部的液态金属A连通。所述发泡材料可以是泡棉或者发泡硅胶等。同时,还可以在泡棉或者发泡硅胶内掺杂其它可与镓金属形成液态合金的导电物质。
与现有技术相比,本实用新型具有以下有益效果:
1. 由于弹性绝缘体31的外表设置有低熔点的液态金属A,利用所述液态金属A在芯片模块200和电路板300之间形成连贯的导电路径,在确保导电体3具有良好弹性的同时,可避免所述导电路径因受芯片模块200压制而断开的现象,保证芯片模块200与电路板300之间稳定的电性连接,同时利用所述液态金属A进行电性传输,所述液态金属A的阻抗小,能够有效降低电连接器100的阻抗,保证电流的正常传输,提供清晰、稳定的通讯效果。
2.由于液态金属A内填充有多个硅橡胶颗粒,利用价格低廉的硅橡胶颗粒来作为填充物,可减少液态金属A的用量,有效降低成本;此外,利用多个细小的硅橡胶颗粒的表面可以有效吸附住液态金属A,使液态金属A不会大量流出收容孔2外。
3.所述绝缘本体1的上、下表面的覆盖层5能够有效防止液态金属A流出收容孔2,还可在一定程度上防止相邻收容孔2中的液态金属A短路;而覆盖层5上设置的通孔50,由于这些通孔50的尺寸非常小,且通孔50的直径小于硅橡胶颗粒的直径,因而可保证硅橡胶颗粒稳固置于收容孔2内,同时,液态金属A在受芯片模块200和电路板300压制时会部分露出通孔50,从而露出的这部分液态金属A与芯片模块200的锡球B以及电路板300上的导电垫C进行电性接触,确保液态金属A在芯片模块200和电路板300之间形成连贯的导电路径。
4.由于弹性绝缘体31的表面设置有一层容易被液态金属A浸润的金属层4,因而液态金属A能够更加牢固地粘附在所述弹性绝缘体31上,以保证液态金属A在芯片模块200和电路板300之间形成连贯的导电路径。
5.由于弹性绝缘体31的外表面粗糙,其外表面设有一些凹槽或凹洞311,增加了液态金属A的量,可保证弹性绝缘体31表面的液态金属A的量不会因多次压接而大量减少,从而可延长电连接器100的使用寿命。
6.由于弹性绝缘体31内部掺杂有可与镓金属形成合金的导电物质D,整个导电体3的导电截面积增大,可进一步加强所述导电体3的导电效果。
7.由于所述弹性绝缘体31突出于绝缘本体1表面的突出部分312的尺寸大于收容孔2的开口,因而突出部分312可对应卡固于绝缘本体1的下表面,能够防止导电体3在收容孔2中上下晃动,使之更稳固地收容于所述收容孔2内。
8.所述收容孔2底端渐缩的勾持部20,可进一步防止所述导电体3从收容孔2中退出。
以上详细说明仅为本实用新型之较佳实施例的说明,非因此局限本实用新型之专利范围,所以,凡运用本创作说明书及图示内容所为之等效技术变化,均包含于本创作之专利范围内。
Claims (21)
1.一种电连接器,用以电性连接一第一电子元件至一第二电子元件,包括设有多个收容孔的一绝缘本体,每一所述收容孔内收容有一导电体,其特征在于:所述导电体包括一弹性绝缘体和包覆于所述弹性绝缘体表面的低熔点的液态金属,所述液态金属于所述第一电子元件和所述第二电子元件之间形成连贯的导电路径。
2.如权利要求1所述的电连接器,其特征在于:所述导电体包括多个弹性绝缘体,每一所述弹性绝缘体的表面由所述液态金属包覆,且全部弹性绝缘体表面的液态金属相互连通。
3.如权利要求1所述的电连接器,其特征在于:所述导电体为浸有所述液态金属的发泡材料,所述发泡材料的内部间隙填充有液态金属,所述发泡材料的表面包覆有液态金属与内部的液态金属连通。
4.如权利要求3所述的电连接器,其特征在于:所述发泡材料为泡棉或者发泡硅胶。
5.如权利要求1所述的电连接器,其特征在于:所述弹性绝缘体为硅橡胶颗粒。
6.如权利要求1所述的电连接器,其特征在于:所述绝缘本体的至少一个表面设有一覆盖层,所述覆盖层对应所述收容孔的位置处开设有直径小于收容孔直径的至少一通孔,部分液态金属露出所述通孔与所述第一电子元件或所述第二电子元件接触。
7.如权利要求6所述的电连接器,其特征在于:所述弹性绝缘体的直径大于所述通孔的直径。
8.如权利要求1所述的电连接器,其特征在于:所述液态金属涂覆于所述弹性绝缘体表面形成所述导电路径。
9.如权利要求1所述的电连接器,其特征在于:所述液态金属为镓金属或者镓合金。
10.如权利要求1所述的电连接器,其特征在于:所述导电体分别与所述第一电子元件和所述第二电子元件压缩接触。
11.如权利要求1所述的电连接器,其特征在于:所述弹性绝缘体表面设有易被所述液态金属浸润的一金属层,所述液态金属设于所述金属层表面。
12.如权利要求11所述的电连接器,其特征在于:所述金属层为锡层。
13.如权利要求1所述的电连接器,其特征在于:所述液态金属的熔点低于40°C。
14.如权利要求1所述的电连接器,其特征在于:所述弹性绝缘体设有贯穿孔,所述液态金属于所述贯穿孔内形成所述导电路径。
15.如权利要求1所述的电连接器,其特征在于:所述弹性绝缘体表面设有凹槽或凹洞。
16.如权利要求1所述的电连接器,其特征在于:所述弹性绝缘体的表面面粗糙。
17.如权利要求1所述的电连接器,其特征在于:所述弹性绝缘体内掺杂有导电物质。
18.如权利要求17所述的电连接器,其特征在于:所述导电物质可与镓形成合金。
19.如权利要求1所述的电连接器,其特征在于:所述收容孔一端设有渐缩的勾持部,所述勾持部勾持于所述导电体。
20.如权利要求1所述的电连接器,其特征在于:所述弹性绝缘体突出于绝缘本体的至少一个表面。
21.如权利要求20所述的电连接器,其特征在于:所述弹性绝缘体突出部分的尺寸大于收容孔的开口。
Priority Applications (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
CN201320791167.5U CN203707402U (zh) | 2013-12-05 | 2013-12-05 | 电连接器 |
US14/181,412 US9439298B2 (en) | 2013-12-05 | 2014-02-14 | Electrical connector |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
CN201320791167.5U CN203707402U (zh) | 2013-12-05 | 2013-12-05 | 电连接器 |
Publications (1)
Publication Number | Publication Date |
---|---|
CN203707402U true CN203707402U (zh) | 2014-07-09 |
Family
ID=51057794
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
CN201320791167.5U Expired - Fee Related CN203707402U (zh) | 2013-12-05 | 2013-12-05 | 电连接器 |
Country Status (2)
Country | Link |
---|---|
US (1) | US9439298B2 (zh) |
CN (1) | CN203707402U (zh) |
Cited By (14)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN104377489A (zh) * | 2014-11-03 | 2015-02-25 | 番禺得意精密电子工业有限公司 | 电子装置及其制造方法 |
CN105719726A (zh) * | 2016-04-27 | 2016-06-29 | 云南科威液态金属谷研发有限公司 | 一种导电软泥及其制备方法 |
CN106486183A (zh) * | 2015-08-31 | 2017-03-08 | 三星电子株式会社 | 各向异性导电材料及包括其的电子装置 |
CN107811616A (zh) * | 2016-09-14 | 2018-03-20 | 中国科学院宁波材料技术与工程研究所 | 一种柔性多参量人体体征探测器及其使用方法 |
CN108064120A (zh) * | 2016-11-09 | 2018-05-22 | 中国科学院宁波材料技术与工程研究所 | 一种弹性电路或电极的制备方法以及制备装置 |
CN108123211A (zh) * | 2016-11-29 | 2018-06-05 | 北京小米移动软件有限公司 | 终端天线系统及控制终端天线系统辐射频段的方法和装置 |
CN108377610A (zh) * | 2018-04-28 | 2018-08-07 | 广东电网有限责任公司 | 一种管道式电路 |
CN108882664A (zh) * | 2018-07-24 | 2018-11-23 | 厦门比肯精密工业有限公司 | 一种适用于电磁屏蔽的导电泡棉 |
CN109728496A (zh) * | 2018-12-11 | 2019-05-07 | 昆明品启科技有限公司 | 一种解决电力系统中连接点发热问题的方法 |
CN109994855A (zh) * | 2019-03-29 | 2019-07-09 | 番禺得意精密电子工业有限公司 | 电连接器 |
CN111741604A (zh) * | 2020-07-04 | 2020-10-02 | 吉安满坤科技股份有限公司 | 一种汽车印制电路板的制造方法 |
CN112271507A (zh) * | 2020-11-05 | 2021-01-26 | 刘春晓 | 一种基于液态金属实现导电的导电连接件 |
CN113496979A (zh) * | 2020-04-08 | 2021-10-12 | 深圳市柔宇科技有限公司 | 电子组件及其制备方法、电子设备 |
CN113948897A (zh) * | 2021-09-10 | 2022-01-18 | 番禺得意精密电子工业有限公司 | 电连接器 |
Families Citing this family (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN203631800U (zh) * | 2013-11-26 | 2014-06-04 | 番禺得意精密电子工业有限公司 | 电连接器 |
US9826662B2 (en) * | 2013-12-12 | 2017-11-21 | General Electric Company | Reusable phase-change thermal interface structures |
KR102421771B1 (ko) * | 2015-07-06 | 2022-07-18 | 삼성디스플레이 주식회사 | 이방성 도전 필름 및 그 제조방법 |
KR102110150B1 (ko) * | 2019-01-08 | 2020-06-08 | (주)티에스이 | 신호 전송 커넥터용 도전부 보호부재 및 그 제조방법과, 이를 갖는 신호 전송 커넥터 및 그 제조방법 |
Family Cites Families (8)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US4740657A (en) * | 1986-02-14 | 1988-04-26 | Hitachi, Chemical Company, Ltd | Anisotropic-electroconductive adhesive composition, method for connecting circuits using the same, and connected circuit structure thus obtained |
EP0651602B1 (en) * | 1993-10-29 | 1999-04-07 | Matsushita Electric Industrial Co., Ltd. | Conductive paste compound for via hole filling, printed circuit board which uses the conductive paste, and method of manufacturing the same |
US5808874A (en) * | 1996-05-02 | 1998-09-15 | Tessera, Inc. | Microelectronic connections with liquid conductive elements |
US6303408B1 (en) * | 1998-02-03 | 2001-10-16 | Tessera, Inc. | Microelectronic assemblies with composite conductive elements |
JP4467721B2 (ja) * | 2000-06-26 | 2010-05-26 | 富士通マイクロエレクトロニクス株式会社 | コンタクタ及びコンタクタを使用した試験方法 |
JP4747707B2 (ja) * | 2004-11-09 | 2011-08-17 | ソニー株式会社 | 多層配線基板及び基板製造方法 |
US7585174B2 (en) * | 2006-06-08 | 2009-09-08 | Lotes Co., Ltd. | Conductive component, electrical connector, and chip module |
US8723049B2 (en) * | 2011-06-09 | 2014-05-13 | Tessera, Inc. | Low-stress TSV design using conductive particles |
-
2013
- 2013-12-05 CN CN201320791167.5U patent/CN203707402U/zh not_active Expired - Fee Related
-
2014
- 2014-02-14 US US14/181,412 patent/US9439298B2/en not_active Expired - Fee Related
Cited By (19)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN104377489A (zh) * | 2014-11-03 | 2015-02-25 | 番禺得意精密电子工业有限公司 | 电子装置及其制造方法 |
CN106486183B (zh) * | 2015-08-31 | 2020-06-30 | 三星电子株式会社 | 各向异性导电材料及包括其的电子装置 |
CN106486183A (zh) * | 2015-08-31 | 2017-03-08 | 三星电子株式会社 | 各向异性导电材料及包括其的电子装置 |
CN105719726A (zh) * | 2016-04-27 | 2016-06-29 | 云南科威液态金属谷研发有限公司 | 一种导电软泥及其制备方法 |
CN105719726B (zh) * | 2016-04-27 | 2018-03-09 | 云南科威液态金属谷研发有限公司 | 一种导电软泥及其制备方法 |
CN107811616A (zh) * | 2016-09-14 | 2018-03-20 | 中国科学院宁波材料技术与工程研究所 | 一种柔性多参量人体体征探测器及其使用方法 |
CN108064120A (zh) * | 2016-11-09 | 2018-05-22 | 中国科学院宁波材料技术与工程研究所 | 一种弹性电路或电极的制备方法以及制备装置 |
CN108064120B (zh) * | 2016-11-09 | 2019-11-19 | 中国科学院宁波材料技术与工程研究所 | 一种弹性电路或电极的制备方法以及制备装置 |
CN108123211A (zh) * | 2016-11-29 | 2018-06-05 | 北京小米移动软件有限公司 | 终端天线系统及控制终端天线系统辐射频段的方法和装置 |
CN108123211B (zh) * | 2016-11-29 | 2020-08-14 | 北京小米移动软件有限公司 | 终端天线系统及控制终端天线系统辐射频段的方法和装置 |
CN108377610A (zh) * | 2018-04-28 | 2018-08-07 | 广东电网有限责任公司 | 一种管道式电路 |
CN108882664A (zh) * | 2018-07-24 | 2018-11-23 | 厦门比肯精密工业有限公司 | 一种适用于电磁屏蔽的导电泡棉 |
CN109728496A (zh) * | 2018-12-11 | 2019-05-07 | 昆明品启科技有限公司 | 一种解决电力系统中连接点发热问题的方法 |
CN109994855A (zh) * | 2019-03-29 | 2019-07-09 | 番禺得意精密电子工业有限公司 | 电连接器 |
CN113496979A (zh) * | 2020-04-08 | 2021-10-12 | 深圳市柔宇科技有限公司 | 电子组件及其制备方法、电子设备 |
CN111741604A (zh) * | 2020-07-04 | 2020-10-02 | 吉安满坤科技股份有限公司 | 一种汽车印制电路板的制造方法 |
CN112271507A (zh) * | 2020-11-05 | 2021-01-26 | 刘春晓 | 一种基于液态金属实现导电的导电连接件 |
CN113948897A (zh) * | 2021-09-10 | 2022-01-18 | 番禺得意精密电子工业有限公司 | 电连接器 |
CN113948897B (zh) * | 2021-09-10 | 2023-07-21 | 番禺得意精密电子工业有限公司 | 电连接器 |
Also Published As
Publication number | Publication date |
---|---|
US9439298B2 (en) | 2016-09-06 |
US20150163897A1 (en) | 2015-06-11 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
CN203707402U (zh) | 电连接器 | |
CN205488322U (zh) | 一种新型内置电池极耳与保护板连接结构 | |
CN203466320U (zh) | 电连接器 | |
CN203871520U (zh) | 电连接器 | |
CN102088146A (zh) | 端子及其电镀方法 | |
CN203760722U (zh) | 电连接器 | |
CN203871516U (zh) | 电连接器 | |
CN203589224U (zh) | 电连接器 | |
CN203942032U (zh) | 电连接器 | |
CN206878210U (zh) | 一种充电连接器及智能手表 | |
CN204885451U (zh) | 电连接器 | |
CN204464523U (zh) | USB Type-C连接头结构 | |
CN201352627Y (zh) | 导电组件及使用所述导电组件的电连接器 | |
CN206789753U (zh) | 一种充电连接器及智能手表 | |
CN203180152U (zh) | 电连接器 | |
CN201797087U (zh) | 电连接器 | |
CN104485523A (zh) | 电连接器组件 | |
CN114976720A (zh) | 连接器母座、连接器组件及电子设备 | |
CN207235203U (zh) | 一种电路板 | |
CN203536572U (zh) | 电连接器 | |
CN202817245U (zh) | 软性电路板转间距电连接器 | |
CN103326152B (zh) | 连接器端子及fpc连接器 | |
CN203589300U (zh) | 电连接器 | |
CN209709216U (zh) | 传输高频信号的板对板连接装置 | |
CN209517623U (zh) | 一种耐压pcb线路板 |
Legal Events
Date | Code | Title | Description |
---|---|---|---|
C14 | Grant of patent or utility model | ||
GR01 | Patent grant | ||
CF01 | Termination of patent right due to non-payment of annual fee |
Granted publication date: 20140709 |
|
CF01 | Termination of patent right due to non-payment of annual fee |