CN203689488U - 电容触摸屏 - Google Patents
电容触摸屏 Download PDFInfo
- Publication number
- CN203689488U CN203689488U CN201320759294.7U CN201320759294U CN203689488U CN 203689488 U CN203689488 U CN 203689488U CN 201320759294 U CN201320759294 U CN 201320759294U CN 203689488 U CN203689488 U CN 203689488U
- Authority
- CN
- China
- Prior art keywords
- layer
- light shield
- transparent electrode
- touch screen
- capacitance touch
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Lifetime
Links
- 239000010408 film Substances 0.000 claims description 28
- 239000010409 thin film Substances 0.000 claims description 28
- 230000000694 effects Effects 0.000 claims description 24
- 239000011253 protective coating Substances 0.000 claims description 17
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical group O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims description 10
- 238000007650 screen-printing Methods 0.000 claims description 10
- 235000012239 silicon dioxide Nutrition 0.000 claims description 5
- 239000000377 silicon dioxide Substances 0.000 claims description 5
- 230000006698 induction Effects 0.000 claims description 4
- 238000005034 decoration Methods 0.000 abstract 4
- 238000001312 dry etching Methods 0.000 abstract 1
- 239000010410 layer Substances 0.000 description 194
- ZHBBDTRJIVXKEX-UHFFFAOYSA-N 1-chloro-2-(3-chlorophenyl)benzene Chemical compound ClC1=CC=CC(C=2C(=CC=CC=2)Cl)=C1 ZHBBDTRJIVXKEX-UHFFFAOYSA-N 0.000 description 23
- 238000007731 hot pressing Methods 0.000 description 15
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- 238000004519 manufacturing process Methods 0.000 description 5
- 239000000463 material Substances 0.000 description 5
- 238000002360 preparation method Methods 0.000 description 5
- XLOMVQKBTHCTTD-UHFFFAOYSA-N Zinc monoxide Chemical compound [Zn]=O XLOMVQKBTHCTTD-UHFFFAOYSA-N 0.000 description 4
- 239000004020 conductor Substances 0.000 description 4
- 238000009413 insulation Methods 0.000 description 4
- 239000002390 adhesive tape Substances 0.000 description 3
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- 230000001681 protective effect Effects 0.000 description 3
- 239000007787 solid Substances 0.000 description 3
- 239000000758 substrate Substances 0.000 description 3
- 239000004793 Polystyrene Substances 0.000 description 2
- 230000008901 benefit Effects 0.000 description 2
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- 238000007906 compression Methods 0.000 description 2
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- 238000005859 coupling reaction Methods 0.000 description 2
- 238000010586 diagram Methods 0.000 description 2
- 238000005516 engineering process Methods 0.000 description 2
- MRNHPUHPBOKKQT-UHFFFAOYSA-N indium;tin;hydrate Chemical compound O.[In].[Sn] MRNHPUHPBOKKQT-UHFFFAOYSA-N 0.000 description 2
- 239000011810 insulating material Substances 0.000 description 2
- 230000004048 modification Effects 0.000 description 2
- 238000012986 modification Methods 0.000 description 2
- 230000003287 optical effect Effects 0.000 description 2
- 239000004033 plastic Substances 0.000 description 2
- 229920003023 plastic Polymers 0.000 description 2
- 229920003229 poly(methyl methacrylate) Polymers 0.000 description 2
- 239000004417 polycarbonate Substances 0.000 description 2
- 229920000139 polyethylene terephthalate Polymers 0.000 description 2
- 239000005020 polyethylene terephthalate Substances 0.000 description 2
- 239000004926 polymethyl methacrylate Substances 0.000 description 2
- 238000005728 strengthening Methods 0.000 description 2
- 239000011787 zinc oxide Substances 0.000 description 2
- 229920002799 BoPET Polymers 0.000 description 1
- YCKRFDGAMUMZLT-UHFFFAOYSA-N Fluorine atom Chemical compound [F] YCKRFDGAMUMZLT-UHFFFAOYSA-N 0.000 description 1
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 1
- 229910000831 Steel Inorganic materials 0.000 description 1
- 239000006117 anti-reflective coating Substances 0.000 description 1
- 230000004888 barrier function Effects 0.000 description 1
- 238000012512 characterization method Methods 0.000 description 1
- 239000011248 coating agent Substances 0.000 description 1
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- 229920001577 copolymer Polymers 0.000 description 1
- 238000005520 cutting process Methods 0.000 description 1
- 238000001035 drying Methods 0.000 description 1
- 230000005611 electricity Effects 0.000 description 1
- 229910052731 fluorine Inorganic materials 0.000 description 1
- 239000011737 fluorine Substances 0.000 description 1
- 239000011521 glass Substances 0.000 description 1
- 238000013007 heat curing Methods 0.000 description 1
- 229910003437 indium oxide Inorganic materials 0.000 description 1
- PJXISJQVUVHSOJ-UHFFFAOYSA-N indium(iii) oxide Chemical compound [O-2].[O-2].[O-2].[In+3].[In+3] PJXISJQVUVHSOJ-UHFFFAOYSA-N 0.000 description 1
- AMGQUBHHOARCQH-UHFFFAOYSA-N indium;oxotin Chemical compound [In].[Sn]=O AMGQUBHHOARCQH-UHFFFAOYSA-N 0.000 description 1
- 238000009434 installation Methods 0.000 description 1
- 238000001755 magnetron sputter deposition Methods 0.000 description 1
- ADFPJHOAARPYLP-UHFFFAOYSA-N methyl 2-methylprop-2-enoate;styrene Chemical compound COC(=O)C(C)=C.C=CC1=CC=CC=C1 ADFPJHOAARPYLP-UHFFFAOYSA-N 0.000 description 1
- 239000000203 mixture Substances 0.000 description 1
- 229920000515 polycarbonate Polymers 0.000 description 1
- 229920000728 polyester Polymers 0.000 description 1
- -1 polyethylene terephthalate Polymers 0.000 description 1
- 229920002223 polystyrene Polymers 0.000 description 1
- 238000005546 reactive sputtering Methods 0.000 description 1
- 239000011347 resin Substances 0.000 description 1
- 229920005989 resin Polymers 0.000 description 1
- 230000000452 restraining effect Effects 0.000 description 1
- 150000004760 silicates Chemical class 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
- 239000002356 single layer Substances 0.000 description 1
- 239000010959 steel Substances 0.000 description 1
- XOLBLPGZBRYERU-UHFFFAOYSA-N tin dioxide Chemical compound O=[Sn]=O XOLBLPGZBRYERU-UHFFFAOYSA-N 0.000 description 1
- 229910001887 tin oxide Inorganic materials 0.000 description 1
- 239000005341 toughened glass Substances 0.000 description 1
- 230000007704 transition Effects 0.000 description 1
- 238000002834 transmittance Methods 0.000 description 1
Images
Landscapes
- Shielding Devices Or Components To Electric Or Magnetic Fields (AREA)
Abstract
Description
Claims (10)
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
CN201320759294.7U CN203689488U (zh) | 2013-11-26 | 2013-11-26 | 电容触摸屏 |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
CN201320759294.7U CN203689488U (zh) | 2013-11-26 | 2013-11-26 | 电容触摸屏 |
Publications (1)
Publication Number | Publication Date |
---|---|
CN203689488U true CN203689488U (zh) | 2014-07-02 |
Family
ID=51011365
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
CN201320759294.7U Expired - Lifetime CN203689488U (zh) | 2013-11-26 | 2013-11-26 | 电容触摸屏 |
Country Status (1)
Country | Link |
---|---|
CN (1) | CN203689488U (zh) |
Cited By (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN106033288A (zh) * | 2015-03-17 | 2016-10-19 | 南昌欧菲光学技术有限公司 | 触摸屏盖板及其制备方法 |
CN106201139A (zh) * | 2016-07-06 | 2016-12-07 | 深圳市骏达光电股份有限公司 | 一种tp单层多点gfm的制作工艺 |
TWI582664B (zh) * | 2016-01-19 | 2017-05-11 | 宸鴻科技(廈門)有限公司 | 觸控面板 |
TWI601046B (zh) * | 2016-04-07 | 2017-10-01 | 速博思股份有限公司 | 具壓力量測、觸控及指紋辨識之感測裝置及方法 |
-
2013
- 2013-11-26 CN CN201320759294.7U patent/CN203689488U/zh not_active Expired - Lifetime
Cited By (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN106033288A (zh) * | 2015-03-17 | 2016-10-19 | 南昌欧菲光学技术有限公司 | 触摸屏盖板及其制备方法 |
TWI582664B (zh) * | 2016-01-19 | 2017-05-11 | 宸鴻科技(廈門)有限公司 | 觸控面板 |
TWI601046B (zh) * | 2016-04-07 | 2017-10-01 | 速博思股份有限公司 | 具壓力量測、觸控及指紋辨識之感測裝置及方法 |
CN106201139A (zh) * | 2016-07-06 | 2016-12-07 | 深圳市骏达光电股份有限公司 | 一种tp单层多点gfm的制作工艺 |
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Legal Events
Date | Code | Title | Description |
---|---|---|---|
C14 | Grant of patent or utility model | ||
GR01 | Patent grant | ||
ASS | Succession or assignment of patent right |
Owner name: SHENZHEN BYD ELECTRONIC COMPONENT CO., LTD. Free format text: FORMER OWNER: BIYADI CO., LTD. Effective date: 20150902 |
|
C41 | Transfer of patent application or patent right or utility model | ||
TR01 | Transfer of patent right |
Effective date of registration: 20150902 Address after: 518119 Guangdong province Shenzhen City Dapeng new Kwai town Yanan Road No. 1 building experimental Byd Co Patentee after: SHENZHEN BYD ELECTRONIC COMPONENT Co.,Ltd. Address before: BYD 518118 Shenzhen Road, Guangdong province Pingshan New District No. 3009 Patentee before: BYD Co.,Ltd. |
|
CP01 | Change in the name or title of a patent holder |
Address after: 518119 Guangdong province Shenzhen City Dapeng new Kwai town Yanan Road No. 1 building experimental Byd Co Patentee after: Shenzhen helitai photoelectric Co.,Ltd. Address before: 518119 Guangdong province Shenzhen City Dapeng new Kwai town Yanan Road No. 1 building experimental Byd Co Patentee before: SHENZHEN BYD ELECTRONIC COMPONENT Co.,Ltd. |
|
CP01 | Change in the name or title of a patent holder | ||
CX01 | Expiry of patent term |
Granted publication date: 20140702 |
|
CX01 | Expiry of patent term |