CN203674265U - LED packaging having double-layer structure - Google Patents
LED packaging having double-layer structure Download PDFInfo
- Publication number
- CN203674265U CN203674265U CN201320734598.8U CN201320734598U CN203674265U CN 203674265 U CN203674265 U CN 203674265U CN 201320734598 U CN201320734598 U CN 201320734598U CN 203674265 U CN203674265 U CN 203674265U
- Authority
- CN
- China
- Prior art keywords
- layer
- led
- sphere lens
- led chip
- spherical lens
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Fee Related
Links
Abstract
The utility model relates to an LED chip installation device, especially relates to an LED packaging having a double-layer structure comprising a leading-out pin. A lower layer of a silicon substrate is provided with a thermal interface material layer, and then is fixedly disposed on a thickening Cu heat sink. The upper layer of the silicon substrate is provided with a metal reflective layer, which is fixedly provided with an LED chip. Two gold threads are respectively connected with a P-pole and an N-pole of the LED chip by a gold thread bonding machine in a welded manner. The outer side of the LED chip is fixedly provided with an inner layer spherical lens and an outer layer spherical lens, which are made of polycarbonate materials. The surface of the inner layer spherical lens is provided with a phosphor layer, and the inner side of the inner layer spherical lens is provided with the organic silica gel in a packaged manner. Two sides of the bottom part of the outer layer spherical lens are provided with airtight rings. The LED packaging has advantages of reasonable structural design, and abilities of enhancing heat dissipation, prolonging service lifetime of LED, improving luminous efficiency, and improving luminance of LED.
Description
Technical field
The utility model relates to a kind of LED chip erecting device, particularly a kind of double-deck LED encapsulation.
Background technology
In recent years, along with developing rapidly of China LED industry, the application of LED constantly expands. and packing forms and performance to LED device have proposed requirements at the higher level.For meeting the different requirements of various LED applications, each LED encapsulation enterprise has released the LED of varied encapsulating structure.But, the close chip of phosphor powder layer in most LED encapsulation is near LED chip, so not only can make the heat that LED chip produces directly conduct to phosphor powder layer, phosphor powder layer can be subject to heat ageing gradually, affect the useful life of LED, and easily absorbed LED amount of emitted light by phosphor powder layer, and reduce actual light extraction efficiency, greatly reduce the luminous intensity of LED.
Summary of the invention
The utility model aims to provide a kind of heat radiation that strengthens, and improves the double-deck LED encapsulation of one of light extraction efficiency
The technical solution of the utility model is achieved like this: a kind of double-deck LED encapsulation, comprise leading foot, it is characterized in that: silicon substrate lower floor arrange be fixed on after thermal interface material layer thickening Cu heat sink on, silicon substrate upper strata arranges metallic reflective layer, fixed L ED chip on metallic reflective layer, the P utmost point of LED chip and N utmost point below are welded with two spun golds by gold thread bonding equipment respectively, the fixing internal layer sphere lens in outside of LED chip, outer sphere lens, internal layer sphere lens, outer sphere lens adopts makrolon material to make, on internal layer sphere lens inner surface, phosphor powder layer is set, the inner embedding organic silica gel of internal layer sphere lens, outer sphere lens two bottom sides arranges gas-tight ring.
The utility model is by increase key sequence boundary layer in LED encapsulation be silicon substrate and thicken the space of Cu between heat sink, between the two, add thermal interface material layer, reach and strengthen heat radiation object, thermal interface material layer is abandoned the heat-conducting glue that conventional thermal conductivity is lower simultaneously, and adopt low temperature tin cream to make, interface resistance is reduced widely, and then obtain better radiating effect.
Utilize on internal layer sphere lens inner surface, arrange phosphor powder layer 7 make outgoing uniformity of light and colour temperature better, phosphor powder layer is away from LED chip, significantly reduce by phosphor powder layer and be reflected back chip and absorbed light quantity, thereby improved light extraction efficiency, improved the luminous intensity of LED.
Brief description of the drawings
Fig. 1 is main TV structure figure of the present utility model.
Embodiment
As shown in Figure 1, comprise leading foot 11, silicon substrate 1 lower floor is fixed on thickening Cu heat sink 3 after thermal interface material layer 2 is set, and thickening Cu thermosphere 3 is more than 50 microns.Silicon substrate 1 upper strata arranges metallic reflective layer 4, fixed L ED chip 5 on metallic reflective layer 4, and the P utmost point of LED chip 5 and N utmost point below are welded with two spun golds 6 by gold thread bonding equipment respectively, the fixing internal layer sphere lens 12 in outside of LED chip 5, outer sphere lens 9; On internal layer sphere lens 12 inner surfaces, phosphor powder layer 7 is set, the inner embedding organic silica gel 8 of internal layer sphere lens 12, outer sphere lens 9 two bottom sides arrange gas-tight ring 10.On internal layer sphere lens 12 inner surfaces, phosphor powder layer 7 is set, makes outgoing uniformity of light and colour temperature better, phosphor powder layer 7, away from LED chip 5, has significantly reduced by phosphor powder layer and has been reflected back chip and absorbed light quantity, thereby improved light extraction efficiency.Meanwhile, internal layer sphere lens 12, outer sphere lens 9 adopt makrolon material to make.Phosphor powder layer 7 is with LED chip 5 without directly contacting, and the heat that LED chip 5 produces can not be delivered to phosphor powder layer 7, thereby has extended the useful life of phosphor powder layer.
Due to the influence of LED package interface to thermal resistance, the utility model is the space between silicon substrate 1 and thickening Cu heat sink 3 by the key sequence boundary layer increasing in LED encapsulation, between the two, add thermal interface material layer 2, reach and strengthen heat radiation object, thermal interface material layer 2 is abandoned the heat-conducting glue that conventional thermal conductivity is lower simultaneously, and adopt low temperature tin cream to make, interface resistance is reduced widely, and then obtain better radiating effect.
Claims (3)
1. a double-deck LED encapsulation, comprise leading foot (11), it is characterized in that: silicon substrate (1) lower floor is fixed on thickening Cu heat sink (3) after thermal interface material layer (2) is set, silicon substrate (1) upper strata arranges metallic reflective layer (4), the upper fixed L ED chip (5) of metallic reflective layer (4), the P utmost point of LED chip (5) and N utmost point below are welded with two spun golds (6) by gold thread bonding equipment respectively, the fixing internal layer sphere lens (12) in outside of LED chip (5), outer sphere lens (9), internal layer sphere lens (12), outer sphere lens (9) adopts makrolon material to make, on internal layer sphere lens (12) inner surface, phosphor powder layer (7) is set, the inner embedding organic silica gel of internal layer sphere lens (12) (8), outer sphere lens (9) two bottom sides arranges gas-tight ring (10).
2. the double-deck LED encapsulation of one according to claim 1, is characterized in that described thermal interface material layer (2) adopts low temperature tin cream to make.
3. the double-deck LED encapsulation of one according to claim 1, is characterized in that described thickening Cu heat sink (3) is more than 50 microns.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201320734598.8U CN203674265U (en) | 2013-11-21 | 2013-11-21 | LED packaging having double-layer structure |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201320734598.8U CN203674265U (en) | 2013-11-21 | 2013-11-21 | LED packaging having double-layer structure |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN203674265U true CN203674265U (en) | 2014-06-25 |
Family
ID=50970529
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201320734598.8U Expired - Fee Related CN203674265U (en) | 2013-11-21 | 2013-11-21 | LED packaging having double-layer structure |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN203674265U (en) |
-
2013
- 2013-11-21 CN CN201320734598.8U patent/CN203674265U/en not_active Expired - Fee Related
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| CN104393145A (en) | Ceramic-substrate-contained white-light LED with low thermal resistance and high brightness | |
| CN202013881U (en) | Integrated packaging structure with vertically structured LED chips | |
| CN204204900U (en) | A kind of LED encapsulation structure | |
| CN203871360U (en) | COB packaging structure of polishing aluminum substrate | |
| CN104154444B (en) | LED lamp with reflecting metal cylinder | |
| JP6875746B2 (en) | Die bonding substrate, high-density integrated COB white light source, and its manufacturing method | |
| TWI528596B (en) | Led package and method of manufacturing the same | |
| CN203674265U (en) | LED packaging having double-layer structure | |
| CN105810806A (en) | LED packaging structure having uniform colour temperature and good heat dissipation | |
| CN203690343U (en) | Power LED package | |
| CN202018990U (en) | High-power white-light LED light source encapsulating structure | |
| CN202120908U (en) | Single-lead light-emitting diode (LED) module | |
| CN202275866U (en) | Packaging structure of light-emitting diode (LED) light source | |
| CN203596367U (en) | Packaging structure suitable for outdoor LED | |
| CN203631605U (en) | Inverted LED packaging structure | |
| CN202721186U (en) | Integrated high-efficiency lighting device provided with multi-layer structure | |
| CN207664061U (en) | A kind of convex LED substrate encapsulating structure | |
| CN203165944U (en) | LED package structure | |
| CN207602620U (en) | A kind of stent for LED encapsulation | |
| CN106025041A (en) | LED packaging structure and forming method thereof | |
| CN202120907U (en) | Leadless LED (Light-emitting Diode) module | |
| CN205846012U (en) | A kind of long-lived high optically focused LED without stroboscopic encapsulates | |
| CN203659917U (en) | Heat dissipation type LED packaging structure | |
| CN203596371U (en) | High power white light LED packaging | |
| CN205488207U (en) | Emitting diode structure of integrated encapsulation of chip on board |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| C14 | Grant of patent or utility model | ||
| GR01 | Patent grant | ||
| CF01 | Termination of patent right due to non-payment of annual fee |
Granted publication date: 20140625 Termination date: 20141121 |
|
| EXPY | Termination of patent right or utility model |