CN203673094U - Reflecting mirror - Google Patents
Reflecting mirror Download PDFInfo
- Publication number
- CN203673094U CN203673094U CN201420005468.5U CN201420005468U CN203673094U CN 203673094 U CN203673094 U CN 203673094U CN 201420005468 U CN201420005468 U CN 201420005468U CN 203673094 U CN203673094 U CN 203673094U
- Authority
- CN
- China
- Prior art keywords
- layer
- thickness
- substrate
- basalis
- protective seam
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Fee Related
Links
Images
Landscapes
- Optical Elements Other Than Lenses (AREA)
Abstract
The utility model discloses a reflecting mirror. The reflecting mirror comprises a substrate and a highly-reflective film arranged on the substrate. The highly-reflective film comprises a basal layer, a highly-reflective layer and a protective layer which are successively arranged. The basal layer is tightly contacted with the substrate. The highly-reflective layer comprises a silver copper alloy layer. The protective layer comprises an Al2O3 layer, a SiO2 layer and a Ti3O5 layer which are successively arranged. The Al2O3 layer is tightly contacted with the highly-reflective layer. According to the reflecting mirror of the utility model, when the substrate is a metal substrate, single surface reflection can be performed; when the substrate is a glass material, internal reflection and external reflection can be realized simultaneously, and reflection efficiency reaches an average value which is more than 97% in a wavelength scope of 400-1800nm and under the condition of a 0-45 degree light incidence angle. Simultaneously, good high temperature resistance and corrosion resistance performance is possessed and an application scope is expanded.
Description
Technical field
The utility model relates to light reflection device field, is specifically related to a kind of catoptron that is coated with highly reflecting films.
Background technology
In solar energy acquisition system, Columnating type solar acquisition system is current advanced sun power conversion system, its photoelectric transformation efficiency is 2 times of common mono-crystalline silicon solar acquisition system, the good system of doing even can reach 2.8 times of common monocrystalline silicon system, along with the development to energy demand, its application prospect is undoubtedly wide, and focusing system is to light collection efficiency and a stability important indicator of Columnating type solar system just thereof, therefore, the continual and steady engineering staff's gordian technique anxious to be resolved that efficiently just becomes of focus device.
Existing focusing system be by once or secondary reflection focus on, the light of 400～1800nm bandwidth is assembled, because the reflection efficiency of gathering device material itself is limited, need to be at its plated surface highly reflecting films, to reduce the reflection loss of luminous energy, and we have two kinds conventionally to the selection of highly reflecting films: Dielectric High Reflective Films or metal highly reflecting films.If working medium highly reflecting films, due to the characteristic limitations of deielectric-coating itself, its reflection bandwidth far can not reach the standard of 400～1800nm, and incident angle increase time reflectivity reduce, optical energy loss is serious, obviously this is worthless; If use existing metal highly reflecting films, after long-time, highly reflecting films may be by high temperature oxidation and corrosion, cause optical energy loss, make the Efficiency Decreasing of assembling, therefore in the practical application of Columnating type solar acquisition system, can accomplish that bandwidth is enough wide, the highly reflecting films of ability anti-corrosion property at high temperature become a critical point of its development of restriction again.Main technical matters is: in metal highly reflecting films, adhesiveness and the compactness of each rete are limited, air and steam easily enter in metallic diaphragm, the easy oxidized corrosion of metallic diaphragm under high temperature and hot and humid environment, the particle foreign matter of being introduced by preparation process in this causes rete defect can aggravate the generation of corrosion simultaneously, this not only makes the reflectivity of metal film reduce, loss luminous energy, and the rete of corrosion spalling also may gather on the passway that is blocked in light path, further reduce the collection efficiency of luminous energy, even can make device deformation fracture under the effect of the stress of high temperature and remaining film.
Application publication number is that CN103322696A(application number is 201310166506.5) Chinese invention patent application a kind of three focused solar energy receiving traps are disclosed, comprise focusing mirror, slot type reflecting surface, focalizer and receiver, wherein, described focusing mirror and focalizer fix on the ground by bedframe respectively, described slot type reflecting surface by bracing frame be installed on focalizer directly over, described receiver is installed on the below of slot type reflecting surface and is positioned at focalizer; The receiver that sunshine reflexes in described focalizer by described focusing mirror, slot type reflecting surface is successively realized three focusing.Although this technical scheme can realize focusing heat collection or photoelectricity to a certain extent, has improved system receiving efficiency,, its focusing mirror still adopts prior art, and still there is above-mentioned technical matters in the reflectance coating on focusing mirror.
Utility model content
The utility model provides a kind of catoptron, is coated with highly reflecting films on substrate, and highly reflecting films reflectivity is high, and corrosion-and high-temp-resistant.
A kind of catoptron, comprises substrate and is arranged on the highly reflecting films on described substrate, and described highly reflecting films comprise the basalis setting gradually, high anti-layer and protective seam;
Described basalis and described substrate are close to;
The anti-layer of described height comprises yellow gold layer;
Described protective seam comprises the Al setting gradually
2o
3layer, SiO
2layer and Ti
3o
5layer, wherein, described Al
2o
3layer is close to the anti-layer of described height.
As highly reflecting films, general reflectivity is more than 90%.
Yellow gold layer in the utility model, compared with pure aluminum material, the reflectivity after its film forming is higher, and compared with fine silver material, its mechanical property, hardness and heat resistance are better, but the adhesion of yellow gold layer is limited, Al
2o
3layer has very high adhesion with yellow gold layer, in protective seam, is close to Al is set with yellow gold layer
2o
3layer, can improve the adhesion between protective seam and yellow gold layer, improves the compactness of highly reflecting films, thereby further improves the corrosion-resistant and high-temperature resistant performance of highly reflecting films.SiO
2layer and Ti
3o
5layer can not only make the finer and close protectiveness of rete stronger, and by regulating SiO
2layer and Ti
3o
5reflectance varies in the thickness energy adjusted design bandwidth of layer, to reach best reflecting effect.
Described basalis at least comprises Al
2o
3layer, the Al in basalis
2o
3layer with protective seam in Al
2o
3layer is two independently retes, uncorrelated mutually.
In the time that described substrate is glass substrate, described basalis comprises the Ti setting gradually
3o
5layer, SiO
2layer and Al
2o
3layer, wherein, described Ti
3o
5layer is close to described substrate, described Al
2o
3layer is close to the anti-layer of described height.Al in basalis
2o
3layer can improve the adhesion between basalis and high anti-layer (being yellow gold layer), meanwhile, and SiO in basalis
2layer and Ti
3o
5layer can not only make the finer and close protectiveness of rete stronger, and by regulating SiO
2layer and Ti
3o
5reflectance varies in the thickness energy adjusted design bandwidth of layer, to reach best reflecting effect., while adopting glass substrate, high reflectance all can be realized in the two sides of catoptron.
In the time that described substrate is metal substrate, described basalis comprises Al
2o
3layer, Al
2o
3layer can improve the adhesion between metal substrate and high anti-layer (being yellow gold layer) well, makes the finer and close protectiveness of highly reflecting films stronger.
As preferably, described yellow gold layer is mixed by the copper of weight percentage 20%～40% and the silver of weight percentage 60%～80%, and this yellow gold layer reflectivity is high, and mechanical property, hardness and heat resistance are all better.
Initial film layer structure in highly reflecting films is selected specific initial designs, in the time that described substrate is glass substrate, and Ti in described basalis
3o
5the optical thickness of layer is 1/16th wavelength, SiO in described basalis
2the optical thickness of layer is 1/8th wavelength, Al in described basalis
2o
3the optical thickness of layer is 1/16th wavelength, and the optical thickness of the yellow gold layer in the anti-layer of described height is 1/40th wavelength, Al in described protective seam
2o
3the optical thickness of layer is 1/16th wavelength, SiO in described protective seam
2the optical thickness of layer is 1/8th wavelength, Ti in described protective seam
3o
5the optical thickness of layer is 1/16th wavelength.
In the time that described substrate is metal substrate, Al in described basalis
2o
3the optical thickness of layer is 1/16th wavelength, and the optical thickness of the yellow gold layer in the anti-layer of described height is 1/40th wavelength, Al in described protective seam
2o
3the optical thickness of layer is 1/16th wavelength, SiO in described protective seam
2the optical thickness of layer is 1/8th wavelength, Ti in described protective seam
3o
5the optical thickness of layer is 1/16th wavelength.
Therefore, in highly reflecting films, the concrete thickness of each rete can obtain in the optimization in theory of above-mentioned initial designs structure.
Further preferably, in the time that described substrate is glass substrate, Ti in described basalis
3o
5the thickness of layer is 23～25nm, SiO in described basalis
2the thickness of layer is 37～41nm, Al in described basalis
2o
3the thickness of layer is 20～23.5nm, and the thickness of the yellow gold layer in the anti-layer of described height is 240～260nm, Al in described protective seam
2o
3the thickness of layer is 20～23nm, SiO in described protective seam
2the thickness of layer is 49.5～51.5nm, Ti in described protective seam
3o
5the thickness of layer is 16～18nm.
Further preferred, Ti in described basalis
3o
5the thickness of layer is 24.15nm, SiO in described basalis
2the thickness of layer is 39.4nm, Al in described basalis
2o
3the thickness of layer is 21.21nm, and the thickness of the yellow gold layer in the anti-layer of described height is 250nm, Al in described protective seam
2o
3the thickness of layer is 21.21nm, SiO in described protective seam
2the thickness of layer is 50.6nm, Ti in described protective seam
3o
5the thickness of layer is 17.1nm.On 400～1800nm wave band, the effect of the film reflectivity of 0 degree and 45 degree all can reach more than 97%, reflecting effect excellence.
Further preferably, in the time that described substrate is metal substrate, Al in described basalis
2o
3the thickness of layer is 20～23.5nm, and the thickness of the yellow gold layer in the anti-layer of described height is 240～260nm, Al in described protective seam
2o
3the thickness of layer is 20～23nm, SiO in described protective seam
2the thickness of layer is 49.5～51.5nm, Ti in described protective seam
3o
5the thickness of layer is 16～18nm.
Further preferred, Al in described basalis
2o
3the thickness of layer is 21.21nm, and the thickness of the yellow gold layer in the anti-layer of described height is 250nm, Al in described protective seam
2o
3the thickness of layer is 21.21nm, SiO in described protective seam
2the thickness of layer is 50.6nm, Ti in described protective seam
3o
5the thickness of layer is 17.1nm.On 400～1800nm wave band, the effect of the film reflectivity of 0 degree and 45 degree all can reach more than 97%, reflecting effect excellence.
A preparation method for catoptron, preparation is simple, and is conducive to form adhesiveness, highly reflecting films that compactness is good, makes it have excellent reflecting properties and good corrosion-and high-temp-resistant.
A preparation method for catoptron, comprises the following steps:
Substrate is put into the vacuum chamber of coating machine, first on substrate, plated one deck basalis, then on substrate, plate the anti-layer of a floor height, then on substrate, plate layer protective layer, obtain catoptron, be coated with the substrate of highly reflecting films.
In the technique of preparation, for being arrived, highly reflecting films in high temperature, are difficult to oxidation corrosion object, need improve as much as possible adhesiveness and the compactness of rete, to completely cut off entering of air and steam, therefore, as preferably, in the time of the high anti-layer of plating (yellow gold layer), evaporation rate need be increased to 8～15nm/ second.In the time of plating basalis and protective seam; need add ion gun auxiliary, the high energy particle that ion gun produces not only makes material molecule obtain the energy accelerating in ion district, and the rete of deposit is produced to sputter; the shadow effect having produced while having overcome deposit, makes the density of film close to massive material.
As preferably, described ionogenic parameter is:
Plating Al
2o
3when layer, ion beam voltage is 800～1000V, and ion beam current is 800～1000mA, and ion accelerating voltage is 300～500V;
Plating SiO
2when layer, ion beam voltage is 800～1000V, and ion beam current is 800～1000mA, and ion accelerating voltage is 300～500V;
Plating Ti
3o
5when layer, ion beam voltage is 1100～1300V, and ion beam current is 800～1000mA, and ion accelerating voltage is 500～800V.
Defect rete being caused in order to reduce foreign matter, as preferably, described substrate, before plating highly reflecting films, needs Ultrasonic Cleaning, and puts into the vacuum chamber of coating machine in latter 1 hour in cleaning, and the air pressure of vacuum chamber is adjusted to 5 × 10
-4～3 × 10
-3pa.And under the condition of oxygenation, bombard coated basal plate with ion gun and reached the object on clean substrate surface; successively by above-mentioned film material and thickness evaporation, in fact the high evaporation speed of the anti-layer of aforementioned height and auxiliary material granule and the foreign matter to poor adhesion of the ion gun of basalis and protective seam also play very strong removal effect afterwards.
As preferably, described coating machine can adopt the light OTFC1300DBI multi-layer vacuum coating machine of speeding.
As preferably, the environment of cleaning, transhipment and plated film is required to be thousand grades of clean rooms; The cleaning cycle of coating machine inner casing be 4～6 stoves/time; The water for cleaning replacement cycle be 50～100 baskets/time.
Compared with prior art, the beneficial effects of the utility model are:
Problem that cannot corrosion-and high-temp-resistant for existing metal highly reflecting films, because cannot making each membranous layer stability and compactness, material, design and the technique of its rete reach a certain height, air and steam can be entered on high anti-layer, under high temperature or hot and humid environment, with the anti-layer of height, a violent oxidation reaction occurring causes and corrodes even film and come off, obviously, this is a fatal restriction of solar focusing system.
Catoptron of the present utility model, when substrate is metal substrate, can reflect by one side, when being glass material, substrate can realize internal reflection and external reflection simultaneously, and reflection efficiency reaches mean value more than 97% on the angle of incidence of light degree of 0～45 ° in 400～1800nm wavelength coverage, thereby has expanded the scope of its application.
In the utility model catoptron, highly reflecting films design under the guarantee of coating process, can make film adhesiveness and the compactness of protective seam, high anti-layer and basalis reach good effect, have substantially stopped entering of air and steam; Thereby reach good heat-and corrosion-resistant effect: before and after the test in 1000 hours of 300 DEG C of hot environments and the test in 1000 hours of 85 DEG C of 85% hot and humid environment, reflectance varies is in ± 1% and corrosion-free generation.
Brief description of the drawings
Fig. 1 is the structural principle schematic diagram of primary event focusing system;
Fig. 2 is the structural principle schematic diagram of twice reflection focusing system;
Fig. 3 is the structural representation that adopts the catoptron of glass substrate;
Fig. 4 is the structural representation that adopts the catoptron of metal substrate;
Fig. 5 is the work schematic diagram that adopts the catoptron of glass substrate;
Fig. 6 is 0 degree and the 45 degree test light spectrograms that adopt the catoptron of glass substrate;
Fig. 7 is the structural principle schematic diagram of wearing display system.
Embodiment
As shown in Figure 1, for primary event focusing system structural principle schematic diagram, primary event focusing system comprises solar panel 1 and for sunshine being reflexed to the catoptron of solar panel 1, catoptron is circular arc, solar panel 1 is positioned at the center of circular arc, catoptron comprises circular arc substrate 3 and is plated in the highly reflecting films 2 on circular arc substrate 3, and highly reflecting films 2 are positioned on circular arc substrate 3 side towards solar panel 1.Primary event focusing system is made up of circular arc substrate 3 and a solar panel 1 that is coated with highly reflecting films 2, after being mapped to catoptron, solar irradiation focuses on solar panel 1, by absorbing sunshine, sunshine is changed into electric energy through photoelectric effect or chemical effect, because the solar panel 1 of primary event focusing system is in the top of focus device (being catoptron), easily cause its placement and wiring all more difficult, and aging speed can be accelerated, therefore, existing mode much all adopts twice reflection focusing system shown in Fig. 2, as shown in Figure 2, twice reflection focusing system comprises solar panel 1, the circular arc catoptron of Intermediate Gray opening and be placed in the hemispherical mirror of the center of arc of circular arc catoptron, circular arc catoptron comprises circular arc substrate 3 and is plated in the highly reflecting films 2 on circular arc substrate 3, highly reflecting films 2 are positioned at the side of circular arc substrate 3 towards hemispherical mirror, hemispherical mirror comprises semisphere substrate 4 and is arranged on the highly reflecting films 5 on the sphere of semisphere substrate 4, opening is positioned at the middle part of circular arc catoptron, and relative with hemispherical mirror, solar panel 1 is positioned at the opening of circular arc catoptron, and relative with hemispherical mirror.Sunshine is first irradiated on circular arc catoptron, then converge for the first time through circular arc catoptron, highly reflecting films 2 through circular arc catoptron reflex on hemispherical mirror, converge for the second time through hemispherical mirror, reflected by the highly reflecting films 5 of hemispherical mirror again, through the opening of circular arc catoptron, converge on solar panel 1 afterwards, collect and transform finally by solar panel 1, this just can solve the problems referred to above.
As shown in Figure 3, be catoptron, comprise glass substrate 6 and be successively set on the basalis on glass substrate 6, high anti-layer and protective seam, form highly reflecting films 2 by basalis, high anti-layer and protective seam; Basalis and glass substrate 6 are close to, and basalis comprises the Ti setting gradually
3o
5 layer 7, SiO
2layer 8 and Al
2o
3layer 9, wherein, Ti
3o
5 layer 7 is close to glass substrate 6; High anti-layer comprises yellow gold layer 10, and yellow gold layer 10 is mixed by the copper of weight percentage 30% and the silver of weight percentage 70%; Protective seam comprises the Al setting gradually
2o
3 layer 11, SiO
2layer 12 and Ti
3o
5 layer 13, wherein, Al
2o
3layer 11 is close to yellow gold layer 10.From glass substrate 6, be disposed with Ti along its thickness direction (away from the direction of glass substrate 6)
3o
5 layer 7, SiO
2layer 8, Al
2o
3 layer 9, yellow gold layer 10, Al
2o
3layer 11, SiO
2layer 12 and Ti
3o
5 layer 13, the concrete thickness of each layer is as shown in table 1 respectively:
Table 1
The preparation method who adopts the catoptron of glass substrate 6, concrete steps are as follows:
First on glass substrate 6, plate one deck basalis, on glass substrate 6, plate Ti successively
3o
5 layer 7, SiO
2layer 8, Al
2o
3layer 9, when plating basalis, need add ion gun auxiliary, plating Ti
3o
5 layer 7 o'clock, ion beam voltage is 1200V, and ion beam current is 900mA, and ion accelerating voltage is 650V; Plating SiO
2layer 8 o'clock, ion beam voltage is 900V, and ion beam current is 900mA, and ion accelerating voltage is 400V; Plating Al
2o
3layer 9 o'clock, ion beam voltage is 900V, and ion beam current is 900mA, and ion accelerating voltage is 400V, completes the preparation of basalis.
On glass substrate 6, plate again the anti-layer of a floor height (being yellow gold layer 10), evaporation rate is increased to 12nm/ second.
Then on glass substrate 6, plate layer protective layer, plate successively Al
2o
3layer 11, SiO
2layer 12 and Ti
3o
5 layer 13, when plating, need add ion gun auxiliary, plating Al
2o
3layer 11 o'clock, ion beam voltage is 900V, and ion beam current is 900mA, and ion accelerating voltage is 400V; Plating SiO
2layer 12 o'clock, ion beam voltage is 900V, and ion beam current is 900mA, and ion accelerating voltage is 400V; Plating Ti
3o
5 layer 13 o'clock, ion beam voltage is 1200V, and ion beam current is 900mA, and ion accelerating voltage is 650V, completes the preparation of protective seam.
The environment of cleaning, transhipment and plated film is required to be thousand grades of clean rooms; The cleaning cycle of coating machine inner casing be 5 stoves/time; The water for cleaning replacement cycle be 70 baskets/time.
Prepare catoptron by above-mentioned condition, the concrete thickness of each layer is pressed table 1, obtains catoptron, is coated with the glass substrate 6 of highly reflecting films 2.
This glass substrate 6(with highly reflecting films 2 also claims highly reflecting films device) in Columnating type solar system, mainly use the high reflection focusing device of secondary in twice reflection focusing system, the surperficial radian of this device is difficult for processing with metal, glass devices can be relatively easy to make by the mode of polishing after die mould, and an other positive meaning of highly reflecting films structural design on this glass substrate is that it can be as shown in Figure 5, can will carry out external reflection by the light of air directive highly reflecting films 2, can will carry out internal reflection by the light of the inner directive highly reflecting films 2 of glass substrate 6 again, this a kind of effective internal reflection film that can reach its environment request for utilization that provides to the more severe internal reflection device of the environmental baseline using.
As shown in Figure 4, be catoptron, comprise metal substrate 14 and be successively set on the basalis on metal substrate 14, high anti-layer and protective seam, form highly reflecting films 2 by basalis, high anti-layer and protective seam; Metal substrate 14 adopts metal material, specifically can aluminium matter; Basalis and metal substrate 14 are close to, and basalis comprises Al
2o
3layer 9; High anti-layer comprises yellow gold layer 10, and yellow gold layer 10 is mixed by the copper of weight percentage 30% and the silver of weight percentage 70%; Protective seam comprises the Al setting gradually
2o
3 layer 11, SiO
2layer 12 and Ti
3o
5 layer 13, wherein, Al
2o
3 layer 11 is close to yellow gold layer 10.From metal substrate 14, be disposed with Al along its thickness direction (away from the direction of glass substrate 14)
2o
3 layer 9, yellow gold layer 10, Al
2o
3layer 11, SiO
2layer 12 and Ti
3o
5 layer 13, the concrete thickness of each layer is as shown in table 2 respectively:
Table 2
| Rete | Al 2O 3Layer 9 | |
Al 2O 3Layer 11 | SiO
2 |
Ti 3O 5Layer 13 |
| Thickness (nm) | 21.21 | 250 | 21.21 | 50.6 | 17.1 |
The preparation method who adopts the catoptron of metal substrate 14, concrete steps are as follows:
First on metal substrate 14, plate one deck basalis, on metal substrate 14, plate Al
2o
3layer 9, when plating basalis, need add ion gun auxiliary, plating Al
2o
3layer 9 o'clock, ion beam voltage is 900V, and ion beam current is 900mA, and ion accelerating voltage is 400V, completes the preparation of basalis.
On metal substrate 14, plate again the anti-layer of a floor height (being yellow gold layer 10), evaporation rate is increased to 13nm/ second.
Then on metal substrate 14, plate layer protective layer, plate successively Al
2o
3layer 11, SiO
2layer 12 and Ti
3o
5layer 13, when plating, need add ion gun auxiliary, plating Al
2o
3layer 11 o'clock, ion beam voltage is 900V, and ion beam current is 900mA, and ion accelerating voltage is 400V; Plating SiO
2layer 12 o'clock, ion beam voltage is 900V, and ion beam current is 900mA, and ion accelerating voltage is 400V; Plating Ti
3o
5layer 13 o'clock, ion beam voltage is 1200V, and ion beam current is 900mA, and ion accelerating voltage is 650V, completes the preparation of protective seam.
The environment of cleaning, transhipment and plated film is required to be thousand grades of clean rooms; The cleaning cycle of coating machine inner casing be 5 stoves/time; The water for cleaning replacement cycle be 60 baskets/time.
Prepare catoptron by above-mentioned condition, the concrete thickness of each layer is pressed table 2, obtains catoptron, is coated with the metal substrate 14 of highly reflecting films 2.
This metal substrate 14(with highly reflecting films 2 also claims highly reflecting films device) in Columnating type solar system, be mainly as a focus reflection device.
Fig. 6 is the reflectivity that adopts the catoptron of glass substrate 6 in 0 degree and 45 degree incident angle situations, as shown in Figure 6, the result of its demonstration is visible, on 400～1800nm wave band, the effect of the film reflectivity of 0 degree and 45 degree all can reach more than 97%, this constraint to focusing system design has not just had, the situation that does not exist reflection position that angle is large can not well assemble luminous energy, due to its excellent corrosion-and high-temp-resistant, show that in LASER Light Source Projection Display of new generation and wear-type field has also obtained good application simultaneously.Equally, in 0 degree and 45 degree incident angle situations, test adopts the reflectivity of the catoptron of metal substrate 14, basic consistent with Fig. 6.Therefore, the catoptron that the above results shows to adopt the catoptron of glass substrate 6 and adopts metal substrate 14 reaches mean value more than 97% on the angle of incidence of light degree of 0～45 ° in 400～1800nm wavelength coverage,
Adopt the catoptron of glass substrate 6 and adopt the heat-and corrosion-resistant effect of catoptron of metal substrate 14: before and after the test in 1000 hours of 300 DEG C of hot environments and the test in 1000 hours of 85 DEG C of 85% hot and humid environment, reflectance varies is in ± 1% and corrosion-free generation.
Fig. 7 is the schematic diagram of wearing display system, as shown in Figure 7, wears display system and comprises image source 17, polarizing beam splitter mirror 16, wavelength plate 15 and the catoptron with highly reflecting films 2.The image light that image source 17 is sent, first by polarizing beam splitter mirror 16, then by wavelength plate 15, then reflects by highly reflecting films 2, then returns through wavelength plate 15, after polarizing beam splitter mirror 16 reflections, enters human eye 18.When system works, image is sent by image source 17, after polarizing beam splitter mirror 16 and wavelength plate 15, arrive catoptron reflection, and then by wavelength plate 15, now the polarization state of image has changed 90 degree position phases, so be reflected system after again arriving polarizing beam splitter mirror 16, enter eyes 18 and see image; Meanwhile, wear display system owing to adopting polarizing beam splitter mirror 16, therefore, after wearing, can not affect the observation to system front scenery, even can also carry out information stack to the scenery of observing by certain information feedback system, further facilitate our life.
Claims (7)
1. a catoptron, comprises substrate and is arranged on the highly reflecting films on described substrate, it is characterized in that, described highly reflecting films comprise the basalis setting gradually, high anti-layer and protective seam;
Described basalis and described substrate are close to;
The anti-layer of described height comprises yellow gold layer;
Described protective seam comprises the Al setting gradually
2o
3layer, SiO
2layer and Ti
3o
5layer, wherein, described Al
2o
3layer is close to the anti-layer of described height.
2. catoptron according to claim 1, is characterized in that, described substrate is glass substrate, and described basalis comprises the Ti setting gradually
3o
5layer, SiO
2layer and Al
2o
3layer, wherein, described Ti
3o
5layer is close to described substrate, described Al
2o
3layer is close to the anti-layer of described height.
3. catoptron according to claim 2, is characterized in that, described substrate is glass substrate, Ti in described basalis
3o
5the thickness of layer is 23～25nm, SiO in described basalis
2the thickness of layer is 37～41nm, Al in described basalis
2o
3the thickness of layer is 20～23.5nm, and the thickness of the yellow gold layer in the anti-layer of described height is 240～260nm, Al in described protective seam
2o
3the thickness of layer is 20～23nm, SiO in described protective seam
2the thickness of layer is 49.5～51.5nm, Ti in described protective seam
3o
5the thickness of layer is 16～18nm.
4. catoptron according to claim 3, is characterized in that, Ti in described basalis
3o
5the thickness of layer is 24.15nm, SiO in described basalis
2the thickness of layer is 39.4nm, Al in described basalis
2o
3the thickness of layer is 21.21nm, and the thickness of the yellow gold layer in the anti-layer of described height is 250nm, Al in described protective seam
2o
3the thickness of layer is 21.21nm, SiO in described protective seam
2the thickness of layer is 50.6nm, Ti in described protective seam
3o
5the thickness of layer is 17.1nm.
5. catoptron according to claim 1, is characterized in that, described substrate is metal substrate, and described basalis comprises Al
2o
3layer.
6. catoptron according to claim 5, is characterized in that, when described substrate is metal substrate, and Al in described basalis
2o
3the thickness of layer is 20～23.5nm, and the thickness of the yellow gold layer in the anti-layer of described height is 240～260nm, Al in described protective seam
2o
3the thickness of layer is 20～23nm, SiO in described protective seam
2the thickness of layer is 49.5～51.5nm, Ti in described protective seam
3o
5the thickness of layer is 16～18nm.
7. catoptron according to claim 6, is characterized in that, Al in described basalis
2o
3the thickness of layer is 21.21nm, and the thickness of the yellow gold layer in the anti-layer of described height is 250nm, Al in described protective seam
2o
3the thickness of layer is 21.21nm, SiO in described protective seam
2the thickness of layer is 50.6nm, Ti in described protective seam
3o
5the thickness of layer is 17.1nm.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201420005468.5U CN203673094U (en) | 2014-01-02 | 2014-01-02 | Reflecting mirror |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201420005468.5U CN203673094U (en) | 2014-01-02 | 2014-01-02 | Reflecting mirror |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN203673094U true CN203673094U (en) | 2014-06-25 |
Family
ID=50969372
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201420005468.5U Expired - Fee Related CN203673094U (en) | 2014-01-02 | 2014-01-02 | Reflecting mirror |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN203673094U (en) |
Cited By (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN106222625A (en) * | 2016-08-09 | 2016-12-14 | 王利明 | A kind of film reflecting mirror for slot type photo-thermal solar energy system |
| CN107092046A (en) * | 2017-04-26 | 2017-08-25 | 上海默奥光学薄膜器件有限公司 | A kind of high reflective mirror of wide spectrum |
| CN108977768A (en) * | 2018-09-14 | 2018-12-11 | 嘉兴岱源真空科技有限公司 | Solar heat reflecting film structure |
| CN109300997A (en) * | 2018-09-14 | 2019-02-01 | 嘉兴岱源真空科技有限公司 | Solar heat reflecting film structure and preparation method thereof |
| CN109445122A (en) * | 2018-12-18 | 2019-03-08 | 长沙韶光铬版有限公司 | A kind of reflection-type graticle and preparation method thereof |
-
2014
- 2014-01-02 CN CN201420005468.5U patent/CN203673094U/en not_active Expired - Fee Related
Cited By (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN106222625A (en) * | 2016-08-09 | 2016-12-14 | 王利明 | A kind of film reflecting mirror for slot type photo-thermal solar energy system |
| CN107092046A (en) * | 2017-04-26 | 2017-08-25 | 上海默奥光学薄膜器件有限公司 | A kind of high reflective mirror of wide spectrum |
| CN108977768A (en) * | 2018-09-14 | 2018-12-11 | 嘉兴岱源真空科技有限公司 | Solar heat reflecting film structure |
| CN109300997A (en) * | 2018-09-14 | 2019-02-01 | 嘉兴岱源真空科技有限公司 | Solar heat reflecting film structure and preparation method thereof |
| CN109445122A (en) * | 2018-12-18 | 2019-03-08 | 长沙韶光铬版有限公司 | A kind of reflection-type graticle and preparation method thereof |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| CN103728684A (en) | High-reflectance film and manufacturing method thereof | |
| CN203673094U (en) | Reflecting mirror | |
| CN103728728B (en) | Dress the optical system of display | |
| CN203673146U (en) | Optical system used for wearable display | |
| CN105022106A (en) | Absorber of ultra wide band of visible and near-infrared band and preparation method thereof | |
| CN110274326A (en) | A kind of radiation refrigerator and preparation method thereof in the daytime | |
| CN103441178B (en) | Compact double reflection-type photovoltaic condenser based on compound eye | |
| WO2020034273A1 (en) | Dual-axis solar tracker-based double-sided photovoltaic module system and method for utilizing back surface of double-sided photovoltaic module | |
| US20140048117A1 (en) | Solar energy systems using external reflectors | |
| CN113741018A (en) | Free-form surface off-axis three-mirror optical system | |
| CN105546857B (en) | A kind of solar selective absorbing film system and preparation method thereof | |
| CN109052985A (en) | The crystal silicon solar energy battery anti-reflection photovoltaic glass of high hard wideband | |
| CN105929471B (en) | A kind of low-cost solar film reflecting mirror material | |
| CN105161141A (en) | Visible-nearinfrared band UWB absorber and making method thereof | |
| CN205941960U (en) | Low -cost solar thin film speculum material | |
| CN202448413U (en) | Ultra-white glass baffle with infrared reflection coating and antireflection film | |
| CN203433180U (en) | Local coating-film entity composite paraboloid type condenser | |
| CN201307596Y (en) | Silicon solar battery dual-layer anti-reflection film | |
| CN103633159A (en) | Method for preparing antireflection film of novel solar cell | |
| CN104575655A (en) | X-ray multilayer film structure aiming at response of multiple working energy points | |
| CN102555355A (en) | Ultra-white glass baffle | |
| TW201138135A (en) | Concentrating photovoltaic module | |
| CN209199949U (en) | A kind of solar battery with enhancing anti-reflection effect | |
| TWI488320B (en) | Surface coating structure and production method thereof | |
| WO2011124036A1 (en) | Method for improving solar energy condensation efficiency in solar energy condensation electric power facility |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| C14 | Grant of patent or utility model | ||
| GR01 | Patent grant | ||
| CF01 | Termination of patent right due to non-payment of annual fee | ||
| CF01 | Termination of patent right due to non-payment of annual fee |
Granted publication date: 20140625 Termination date: 20190102 |