CN203617972U - High-power Ka frequency band power amplification singlechip microcomputer - Google Patents
High-power Ka frequency band power amplification singlechip microcomputer Download PDFInfo
- Publication number
- CN203617972U CN203617972U CN201320869519.4U CN201320869519U CN203617972U CN 203617972 U CN203617972 U CN 203617972U CN 201320869519 U CN201320869519 U CN 201320869519U CN 203617972 U CN203617972 U CN 203617972U
- Authority
- CN
- China
- Prior art keywords
- electronic circuit
- output
- transistor
- circuit
- amplification
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Fee Related
Links
Images
Landscapes
- Amplifiers (AREA)
- Microwave Amplifiers (AREA)
Abstract
The utility model discloses a high-power Ka frequency band power amplification singlechip microcomputer which comprises an input stage matching sub circuit, a first stage transistor amplification sub circuit, a first stage and second stage matching sub circuit, a second stage transistor amplification sub circuit, a second stage and third stage matching sub circuit, a third stage transistor amplification sub circuit and an output stage matching sub circuit; all the circuits are realized in one chip. The arrangement in each stage of sub circuit has a structure which is symmetrical up and down. A PHEMT (pseudomorphic high electron mobility transistor) is used as a core device of each transistor amplification sub circuit, and a design method of on-chip power distribution and synthesis is utilized, so that the output power of an amplification circuit can be improved. The singlechip microcomputer is applied to a Ka frequency band power amplification module of a point-to-point communication transmission component.
Description
Technical field
The utility model relates to the power amplification monolithic integrated circuit of a kind of high power Ka frequency range of communication and measurement and control area.
Background technology
The power amplification monolithic integrated circuit of high power Ka frequency range, as the important component part of microwave and millimeter wave communication system, is mainly used in communication and measurement and control area.At present, the power amplification monolithic integrated circuit of Ka frequency range is because frequency range is high, loss is large, and the power output of single chips is lower.In order to obtain the power amplifier module of high-power output, multi-disc power amplifier monolithic need be placed in a module or assembly, but can cause like this volume of power amplifier module or assembly excessive, chip cooling is bad, problem such as gain deterioration etc.
Utility model content
The technical problems to be solved in the utility model is: a kind of power amplification monolithic integrated circuit of high power Ka frequency range is provided, adopts gallium arsenide integrated circuit technique to complete, this circuit can provide the monolithic power output of 4W.In power amplifier module, adopt this circuit, can reduce the synthetic number of times of power and the synthetic loss of power amplifier module, in guaranteeing power amplifier gain, improved power output.
Technical solution adopted in the utility model is:
A power amplification monolithic integrated circuit for high power Ka frequency range, is characterized in that comprising:
Input stage coupling electronic circuit, distributes for input signal being carried out to four road constant powers; The transistor input impedance of simultaneously first order transistor being amplified in electronic circuit is changed;
First order transistor amplifies electronic circuit, for input stage coupling electronic circuit output Si road signal is carried out to power amplification;
The one or two interstage matched electronic circuit, the impedance matching of amplifying electronic circuit and second level transistor amplification electronic circuit for realizing first order transistor, amplifies the first order transistor electronic circuit output Si road signal averaging simultaneously and distributes to eight outputs;
Second level transistor amplifies electronic circuit, for the one or two interstage matched electronic circuit output Ba road signal is carried out to power amplification, and exports to the two or three interstage matched electronic circuit;
The two or three interstage matched electronic circuit, the impedance matching of amplifying electronic circuit and third level transistor amplification electronic circuit for realizing second level transistor, amplifies the second level transistor electronic circuit output Ba road signal averaging simultaneously and distributes to 16 outputs;
Third level transistor amplifies electronic circuit, for the two or three interstage matched electronic circuit output Shi six road signals are carried out to power amplification, and exports to output stage coupling electronic circuit;
Output stage coupling electronic circuit, changes for the transistorized output impedance of third level transistor being amplified to electronic circuit, third level transistor amplification electronic circuit output Shi six road signals is carried out to constant power simultaneously and synthesizes a road signal output.
Wherein, described first order transistor amplifies electronic circuit, second level transistor amplifies electronic circuit and third level transistor amplifies electronic circuit by pHEMT transistor formation, each transistorized source ground, and drain electrode connects output at the corresponding levels, and grid connects input at the corresponding levels.
Wherein, the two or three described interstage matched electronic circuit comprises four way match circuits, and every way match circuit is made up of pre-matching circuit, main match circuit and rear class match circuit.
The utility model is compared with background technology, and tool has the following advantages:
(1) this circuit working frequency range is high, and power output is large, adopts AB type circuit structure, and the linearity is high, has solved the little problem of current Ka frequency range power amplifier monolithic integrated circuit power output.
(2) the utility model can improve to greatest extent in circuit chip inside the power output of power amplification circuit, can obviously reduce module volume after this circuit chip is applied to power amplifier module, is convenient to integrated application, reduces module cost.
(3) because this circuit adopts chip internal power synthetic, compared with sheet external power synthetic method, this circuit has higher gain and less loss, and therefore the efficiency of power amplifier is improved.
(4) in circuit, the design of coupling electronic circuits at different levels designs for gain, efficiency and the power of circuit respectively, and the method that the two or three interstage matched electronic circuit adopts pre-matching to combine with main coupling realizes maximal efficiency output.Integrated circuit is guaranteeing, under the prerequisite of gain, to have realized peak power and peak efficiency simultaneously.
Accompanying drawing explanation
Fig. 1 is that high power Ka frequency band power is amplified monolithic integrated circuit schematic diagram
Fig. 2 is the two or three interstage matched electronic circuit internal circuit schematic diagram
Embodiment
The utility model adopts as the execution mode of Fig. 1, in this circuit diagram, is followed successively by from left to right: input stage coupling electronic circuit M1, first order transistor amplify electronic circuit A1, the one or two interstage matched electronic circuit M2, second level transistor amplifies electronic circuit A2, the two or three interstage matched electronic circuit M3, third level transistor amplification electronic circuit A3, output stage coupling electronic circuit M4.Circuit left end is input stage In, and right-hand member is output stage Out.Embodiment presses Fig. 1 connection line.
Input stage coupling electronic circuit, distributes for input signal being carried out to four road constant powers; The transistor input impedance of simultaneously first order transistor being amplified in electronic circuit is changed; First order transistor amplifies electronic circuit, for input stage coupling electronic circuit output Si road signal is carried out to power amplification; The one or two interstage matched electronic circuit, the impedance matching of amplifying electronic circuit and second level transistor amplification electronic circuit for realizing first order transistor, amplifies the first order transistor electronic circuit output Si road signal averaging simultaneously and distributes to eight outputs; Second level transistor amplifies electronic circuit, for the one or two interstage matched electronic circuit output Ba road signal is carried out to power amplification, and exports to the two or three interstage matched electronic circuit; The two or three intervalve matching circuit, the impedance matching of amplifying electronic circuit and third level transistor amplification electronic circuit for realizing second level transistor, amplifies the second level transistor electronic circuit output Ba road signal averaging simultaneously and distributes to 16 outputs; Third level transistor amplifies electronic circuit, for the two or three interstage matched electronic circuit output Shi six road signals are carried out to power amplification, and exports to output stage coupling electronic circuit; Output stage coupling electronic circuit, changes for the transistorized output impedance of third level transistor being amplified to electronic circuit, third level transistor amplification electronic circuit output Shi six road signals is carried out to constant power simultaneously and synthesizes a road signal, the line output of going forward side by side.
Described input stage coupling electronic circuit M1, the one or two interstage matched electronic circuit M2, the two or three interstage matched electronic circuit M3, output stage coupling electronic circuit M4 form by microstrip line, resistance, electric capacity, described first order transistor amplifies electronic circuit A1 inside and comprises 4 pHEMT transistors, each transistor gate area parameters is identical, is 8 × 40um
2, described second level transistor amplifies electronic circuit A2 inside and comprises 8 pHEMT transistors, and each transistor gate area parameters is identical, is 8 × 65um
2, described third level transistor amplifies electronic circuit A3 inside and comprises 16 pHEMT transistors, and each transistor gate area parameters is identical, is 8 × 65um
2.
The described longitudinal four groups of symmetric designs of the inner employing of the two or three interstage matched electronic circuit M3, as shown in Figure 2, every group comprises three parts, two paths of signals input, four tunnel outputs, wherein, M3_1, M3_4, M3_7, M3_10 are the pre-matching circuit that structure is identical, and M3_2, M3_5, M3_8, M3_11 are the main match circuit that structure is identical, and M3_3, M3_6, M3_9, M3_12 are the rear class match circuit that structure is identical.Signal leaks level output from A2 level transistor, enters main match circuit through pre-matching circuit, realizes power division in main match circuit inside, exports the transistorized grid of A3 through rear class match circuit to.
In embodiment, input stage coupling electronic circuit M1 is made up of microstrip line, resistance, electric capacity, and there is an input In in left side, as the signal input port of circuit; There are four outputs on right side, is connected respectively with four inputs of first order transistor amplification electronic circuit A1.First order transistor amplifies the pHEMT transistor that electronic circuit A1 comprises 4 identical parameters, its function is that input Si road signal is carried out to power amplification, each transistorized source electrode the is received gallium arsenide substrate back side by through hole is connected with ground, each transistorized grid is connected with input stage coupling electronic circuit M1 output as input, and each transistorized drain electrode is connected with the input of the one or two interstage matched electronic circuit M2 as output at the corresponding levels.Four inputs of the one or two interstage matched electronic circuit M2 are connected with the output that first order transistor amplifies electronic circuit A1, and eight outputs of the one or two interstage matched electronic circuit M2 are connected with the input that second level transistor amplifies electronic circuit A2.Second level transistor amplifies the pHEMT transistor that electronic circuit A2 comprises 8 identical parameters, each transistorized source electrode the is received gallium arsenide substrate back side by through hole is connected with ground, each transistorized grid is connected with the output of the one or two interstage matched electronic circuit M2 as input, and each transistorized drain electrode is connected with the input of the two or three interstage matched electronic circuit M3 as output at the corresponding levels.Eight inputs of the two or three interstage matched electronic circuit M3 are connected with the output that second level transistor amplifies electronic circuit A2, and 16 outputs of the two or three interstage matched electronic circuit M3 are connected with the input that third level transistor amplifies electronic circuit A3.Third level transistor amplifies the pHEMT transistor that electronic circuit A3 comprises 16 identical parameters, each transistorized source electrode the is received gallium arsenide substrate back side by through hole is connected with ground, each transistorized grid is connected with the output of the two or three interstage matched electronic circuit M3 as input, and each transistorized drain electrode is connected with the input of output stage coupling electronic circuit M4 as output.Output stage coupling electronic circuit M4 amplifies transistorized output impedance in electronic circuit A3 by third level transistor to be transformed into 50 ohm, so that circuit right side output port mates with external circuit, provide Shi six road signals to carry out constant power to third level transistor amplification electronic circuit A3 simultaneously and synthesize.Output stage coupling electronic circuit M4 is made up of microstrip line, resistance, electric capacity, and there are 16 inputs in left side, amplifies the input port of electronic circuit A3Shi six road signals as third level transistor; There is an output on right side, as the power stage port Out of this circuit.
Claims (3)
1. a power amplification monolithic integrated circuit for high power Ka frequency range, is characterized in that comprising:
Input stage coupling electronic circuit, distributes for input signal being carried out to four road constant powers; The transistor input impedance of simultaneously first order transistor being amplified in electronic circuit is changed;
First order transistor amplifies electronic circuit, for input stage coupling electronic circuit output Si road signal is carried out to power amplification;
The one or two interstage matched electronic circuit, amplify the impedance matching of electronic circuit and second level transistor amplification electronic circuit for realizing first order transistor, first order transistor is amplified to electronic circuit output Si road signal averaging simultaneously and distribute to eight outputs, the line output of going forward side by side;
Second level transistor amplifies electronic circuit, for the one or two interstage matched electronic circuit output Ba road signal is carried out to power amplification, and exports to the two or three interstage matched electronic circuit;
The two or three interstage matched electronic circuit, amplify the impedance matching of electronic circuit and third level transistor amplification electronic circuit for realizing second level transistor, second level transistor is amplified to electronic circuit output Ba road signal averaging simultaneously and distribute to 16 outputs, the line output of going forward side by side;
Third level transistor amplifies electronic circuit, for the two or three interstage matched electronic circuit output Shi six road signals are carried out to power amplification, and exports to output stage coupling electronic circuit;
Output stage coupling electronic circuit, changes for the transistorized output impedance of third level transistor being amplified to electronic circuit, third level transistor amplification electronic circuit output Shi six road signals is carried out to constant power simultaneously and synthesizes a road signal, the line output of going forward side by side.
2. the power amplification monolithic integrated circuit of a kind of high power Ka frequency range according to claim 1, it is characterized in that: described first order transistor amplifies electronic circuit, second level transistor amplifies electronic circuit and third level transistor amplification electronic circuit forms by pHEMT transistor, each transistorized source ground, drain electrode connects output at the corresponding levels, and grid connects input at the corresponding levels.
3. the power amplification monolithic integrated circuit of a kind of high power Ka frequency range according to claim 1, it is characterized in that: the two or three described interstage matched electronic circuit comprises four way match circuits, every way match circuit is made up of pre-matching circuit, main match circuit and rear class match circuit.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201320869519.4U CN203617972U (en) | 2013-12-27 | 2013-12-27 | High-power Ka frequency band power amplification singlechip microcomputer |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201320869519.4U CN203617972U (en) | 2013-12-27 | 2013-12-27 | High-power Ka frequency band power amplification singlechip microcomputer |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN203617972U true CN203617972U (en) | 2014-05-28 |
Family
ID=50770588
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201320869519.4U Expired - Fee Related CN203617972U (en) | 2013-12-27 | 2013-12-27 | High-power Ka frequency band power amplification singlechip microcomputer |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN203617972U (en) |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN105811895A (en) * | 2016-02-28 | 2016-07-27 | 浙江铖昌科技有限公司 | Optimized high-efficiency K-waveband MMIC power amplifier based on harmonic terminal |
| CN106921350A (en) * | 2016-07-13 | 2017-07-04 | 电子科技大学 | A kind of multiple-stage harmonic controls the match circuit of high efficiency microwave monolithic integrated amplifier |
-
2013
- 2013-12-27 CN CN201320869519.4U patent/CN203617972U/en not_active Expired - Fee Related
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN105811895A (en) * | 2016-02-28 | 2016-07-27 | 浙江铖昌科技有限公司 | Optimized high-efficiency K-waveband MMIC power amplifier based on harmonic terminal |
| CN105811895B (en) * | 2016-02-28 | 2018-05-22 | 浙江铖昌科技有限公司 | High efficiency K-band MMIC power amplifiers are optimized based on harmonic termination |
| CN106921350A (en) * | 2016-07-13 | 2017-07-04 | 电子科技大学 | A kind of multiple-stage harmonic controls the match circuit of high efficiency microwave monolithic integrated amplifier |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| TW201545470A (en) | Improved power amplifier bias circuit having parallel emitter follower | |
| CN103580610B (en) | Multimode power amplifier and corresponding mobile communication terminal | |
| CN201846313U (en) | Millimeter wave monolithic integrated power amplifier | |
| Shirinfar et al. | A fully integrated 22.6 dBm mm-Wave PA in 40nm CMOS | |
| CN103430603B (en) | power amplifier, transceiver and base station | |
| CN103633946A (en) | Low-noise amplifier for realizing on-chip input and output of 50-ohm matching | |
| CN103117712A (en) | Complementary metal-oxide-semiconductor (CMOS) high gain broad band low noise amplifier | |
| US20140035678A1 (en) | Power Amplifier Apparatus and Power Amplifier Circuit | |
| CN103346741B (en) | A kind of two-way noise cancellation type current multiplexing low noise amplifier | |
| CN201846314U (en) | Millimeter-wave monolithic integrated low-noise amplifier | |
| CN104753470A (en) | X-band low noise amplifier | |
| CN203617972U (en) | High-power Ka frequency band power amplification singlechip microcomputer | |
| CN203368405U (en) | Two-way noise cancelling-type current multiplex low-noise amplifier | |
| CN207869072U (en) | A kind of quasi- multi-chip power amplifier | |
| JP6169169B2 (en) | Amplifying circuit for cross wiring of DC signal and microwave signal | |
| CN203632622U (en) | Power amplifying circuit and printed circuit board thereof | |
| CN108763640A (en) | The Doherty power amplifier and its design method that high efficiency height retracts | |
| CN202160145U (en) | High-efficiency KU wave band power amplifier | |
| CN105680801B (en) | A kind of multimode power amplifier and its mobile terminal for balancing heat dissipation | |
| CN104270104A (en) | High-intermodulation power amplifier employing APD (Amplitude Probability Distribution) technology | |
| CN109639246B (en) | X-waveband 300w pulse power module | |
| CN201290108Y (en) | Millimeter-wave drive grade monolithic receive/transmission integrated circuit | |
| CN216904826U (en) | Ku frequency band power amplifier module | |
| CN203608164U (en) | Multimode power amplifier and corresponding mobile communication terminal | |
| CN104716909A (en) | Power supplying method and device of RF power amplifier |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| C14 | Grant of patent or utility model | ||
| GR01 | Patent grant | ||
| CF01 | Termination of patent right due to non-payment of annual fee | ||
| CF01 | Termination of patent right due to non-payment of annual fee |
Granted publication date: 20140528 Termination date: 20211227 |