CN202160145U - High-efficiency KU wave band power amplifier - Google Patents
High-efficiency KU wave band power amplifier Download PDFInfo
- Publication number
- CN202160145U CN202160145U CN2011202133279U CN201120213327U CN202160145U CN 202160145 U CN202160145 U CN 202160145U CN 2011202133279 U CN2011202133279 U CN 2011202133279U CN 201120213327 U CN201120213327 U CN 201120213327U CN 202160145 U CN202160145 U CN 202160145U
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- power
- power amplifier
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- wave band
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Abstract
The utility model discloses a high-efficiency KU wave band effective power amplifier which comprises an input impedance matching circuit, a small power amplifying circuit module and a high power amplifying circuit module. The input impedance matching circuit is used for matching the impedance of a microwave signal interface of a microwave KU wave band and the impedance of a subsequent circuit; the small power amplifying circuit module is used for receiving the signals of the input impedance matching circuit and then amplifying and outputting the signals; and the high power amplifying circuit module is used for receiving the signals of the small power amplifying circuit module as well as amplifying and outputting the signals. The high-efficeincy KU wave band power amplifier has the advantages of simple structure, small size, high efficiency, etc.
Description
Technical field
The utility model relates to a kind of KU wave band power amplifier efficiently, little, the high efficiency KU wave band of especially a kind of volume power amplifier.
Background technology
The KU wave band is the satellite communication applications frequency range, and general work, is not allowed to be subject to microwave radiation and disturbed between 10GHz～15GHz in frequency range, and its frequency range is used it and transmitted multiple communication service and information.
The power amplifier tube that is used for KU wave band power amplifier in the market all adopts traditional GaAs (GaAs) microwave power device; Though satisfy the power output requirement of KU wave band; But because the monolithic power output of GaAs microwave power device is little, for powerful output is provided, need be through the synthetic amplification of too much device; Cause the physical dimension of power amplifier excessive, efficient is low.
Summary of the invention
To the deficiency of prior art, the purpose of the utility model is to provide a kind of volume little, the KU wave band high efficiency power amplifier that efficient is high.
The technical scheme of the utility model is:
A kind of KU wave band high efficiency power amplifier comprises input impedance matching circuit, is used for the impedance of the interface of the microwave signal of microwave KU wave band and the impedance of subsequent conditioning circuit are mated; The low-power amplifier module receives the signal of input impedance matching circuit, and signal is amplified; The high-power amplifying circuit module receives the signal of low-power amplifier module, and signal is amplified once more.
Further, said low-power amplifier module comprises first low-power amplifier, is connected with input impedance matching circuit, and input signal is tentatively amplified; Second low-power amplifier is connected with first low-power amplifier, further amplifies to the received signal; Power promotes amplifying circuit, receives the signal of second low-power amplifier, and its power is further amplified.
Further, said high-power amplifying circuit module comprises power splitter, receives the signal of low-power amplifier module, exports after being divided into several; At least one gallium nitride high-power amplifying circuit receives the signal of power splitter output, and it is amplified the back export; Mixer receives the output signal of gallium nitride high-power amplifying circuit, and the amplifying signal of at least one gallium nitride high-power amplifying circuit output is merged into the output of one road signal.
Further, also comprise an output impedance match circuit, said output impedance match circuit is connected with the high-power amplification module of gallium nitride, improves the power output of KU wave band power amplifier.
With respect to prior art, the utility model adopts gallium nitride (GaN) microwave power amplifying circuit that microwave signal is amplified, and has effectively reduced the volume of KU wave band power amplifier, has improved the efficient of microwave power amplifier.
Description of drawings
Fig. 1 is the structural representation of KU wave band power amplifier in the execution mode of the utility model.
The realization of the utility model purpose, functional characteristics and advantage will combine embodiment, further specify with reference to accompanying drawing.
Embodiment
Should be appreciated that specific embodiment described herein only in order to explanation the utility model, and be not used in qualification the utility model.
As shown in Figure 1; The described KU wave band of the specific embodiment of the utility model high efficiency power amplifier comprises that input impedance matching circuit 1, low-power amplifier module 2, the high-power amplification module 3 of gallium nitride and output impedance match circuit 4, four are linked in sequence successively.
Input impedance matching circuit 1 receives the microwave signal of KU wave band, and exports signal to low-power amplifier module 2.
Low-power amplifier module 2 comprises that first low-power amplifier 21, second low-power amplifier 22 and power promote amplifying circuit 23, and the three is linked in sequence successively.
High-power amplification module 3 comprises power splitter 31, the first gallium nitride high-power amplifying circuit 32, the second gallium nitride high-power amplifying circuit 33 and mixer 34.1 port of power splitter is connected to the output of low-power amplifier module 2; 2 ports are connected to the first gallium nitride microwave power amplifying circuit 32; 3 ports are connected to the second gallium nitride microwave power amplifying circuit 33; The output of the first gallium nitride microwave power amplifying circuit 32 and the second gallium nitride microwave power amplifying circuit 33 is connected with 3 ports with 2 ports of mixer respectively, and 1 port of mixer 34 is an output port, is connected with the output impedance match circuit.
Output impedance match circuit 4 receives the signal of high-power amplification module 3, and signal is exported.
In the course of work; Input impedance matching circuit receives the microwave signal of KU wave band; And the impedance of microwave signal interface and the input impedance of low-power amplifier module 2 mated, make its impedance satisfy the requirement of the input port impedance operator of low-power amplifier module 2.Microwave signal is after the preliminary amplification of first low-power amplifier 21; Get into second low-power amplifier 22 and the microwave signal of KU wave band is further amplified, obtain being suitable for promoting the power output and the gain of high-power amplification module with power promotion amplifying circuit 23.Power splitter 31 receives the signal behind low-power amplifier module 2 preliminary the amplifications, and signal is divided into two-way, and one the tunnel delivers to the first gallium nitride high-power amplifying circuit 32 carries out the high power amplification; Other one road warp, the second gallium nitride high-power amplifying circuit 33 amplifies simultaneously.The signal of two-way after amplifying transfers to output impedance match circuit 4 after mixer 34 is synthetic with power.
With respect to prior art, the described KU wave band of the utility model high efficiency power amplifier power output is big, and physical dimension is little, is significantly less than existing KU band amplifier for the sensitiveness of ambient temperature.
The above is merely the preferred embodiment of the utility model; Be not thus the restriction the utility model claim; Every equivalent structure or equivalent flow process conversion that utilizes the utility model specification and accompanying drawing content to be done; Or directly or indirectly be used in other relevant technical fields, all in like manner be included in the scope of patent protection of the utility model.
Claims (4)
1. a KU wave band high efficiency power amplifier is characterized in that, comprising:
Input impedance matching circuit is used for the impedance of the interface of the microwave signal of microwave KU wave band and the impedance of subsequent conditioning circuit are mated;
The low-power amplifier module, the signal of reception input impedance matching circuit, and with signal amplification output;
The high-power amplifying circuit module, the signal of reception low-power amplifier module, and with signal amplification output.
2. KU wave band high efficiency power amplifier as claimed in claim 1 is characterized in that, said low-power amplifier module comprises:
First low-power amplifier is connected with input impedance matching circuit, and input signal is tentatively amplified;
Second low-power amplifier is connected with first low-power amplifier, further amplifies to the received signal;
Power promotes amplifying circuit, receives the signal of second low-power amplifier, and its power is further amplified.
3. KU wave band high efficiency power amplifier as claimed in claim 2 is characterized in that, said high-power amplifying circuit module comprises:
Power splitter receives the signal of low-power amplifier module, exports after being divided into several;
At least one gallium nitride high-power amplifying circuit receives the signal of power splitter output, and it is amplified the back export;
Mixer receives the output signal of gallium nitride high-power amplifying circuit, and the amplifying signal of at least one gallium nitride high-power amplifying circuit output is merged into the output of one road signal.
4. like each described KU wave band high efficiency power amplifier of claim 1 to 3; It is characterized in that; Also comprise an output impedance match circuit, said output impedance match circuit is connected with the high-power amplification module of gallium nitride, improves the power output of KU wave band power amplifier.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN2011202133279U CN202160145U (en) | 2011-06-22 | 2011-06-22 | High-efficiency KU wave band power amplifier |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN2011202133279U CN202160145U (en) | 2011-06-22 | 2011-06-22 | High-efficiency KU wave band power amplifier |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN202160145U true CN202160145U (en) | 2012-03-07 |
Family
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Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN2011202133279U Expired - Lifetime CN202160145U (en) | 2011-06-22 | 2011-06-22 | High-efficiency KU wave band power amplifier |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN202160145U (en) |
Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN102832892A (en) * | 2012-08-09 | 2012-12-19 | 中国电子科技集团公司第五十五研究所 | Power amplifier for Ku-waveband for satellite |
| CN105846784A (en) * | 2016-03-21 | 2016-08-10 | 天津大学 | Design method for GaN HEMT multistage radio frequency power amplifier and amplifier |
| CN106685371A (en) * | 2016-12-30 | 2017-05-17 | 中国电子科技集团公司第五十四研究所 | Splitter/combiner and Ku wave band solid-state high-power amplifier |
| CN113644886A (en) * | 2021-06-28 | 2021-11-12 | 北京无线电测量研究所 | Ku-waveband satellite-borne power amplifier, system and method |
-
2011
- 2011-06-22 CN CN2011202133279U patent/CN202160145U/en not_active Expired - Lifetime
Cited By (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN102832892A (en) * | 2012-08-09 | 2012-12-19 | 中国电子科技集团公司第五十五研究所 | Power amplifier for Ku-waveband for satellite |
| CN102832892B (en) * | 2012-08-09 | 2015-09-16 | 中国电子科技集团公司第五十五研究所 | A kind of star Ku band power amplifiers |
| CN105846784A (en) * | 2016-03-21 | 2016-08-10 | 天津大学 | Design method for GaN HEMT multistage radio frequency power amplifier and amplifier |
| CN106685371A (en) * | 2016-12-30 | 2017-05-17 | 中国电子科技集团公司第五十四研究所 | Splitter/combiner and Ku wave band solid-state high-power amplifier |
| CN106685371B (en) * | 2016-12-30 | 2019-03-01 | 中国电子科技集团公司第五十四研究所 | A kind of combiner device and Ku band high-power solid-state power amplifier |
| CN113644886A (en) * | 2021-06-28 | 2021-11-12 | 北京无线电测量研究所 | Ku-waveband satellite-borne power amplifier, system and method |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| C14 | Grant of patent or utility model | ||
| GR01 | Patent grant | ||
| CX01 | Expiry of patent term |
Granted publication date: 20120307 |
|
| CX01 | Expiry of patent term |