CN104270104A - High-intermodulation power amplifier employing APD (Amplitude Probability Distribution) technology - Google Patents
High-intermodulation power amplifier employing APD (Amplitude Probability Distribution) technology Download PDFInfo
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- CN104270104A CN104270104A CN201410496346.5A CN201410496346A CN104270104A CN 104270104 A CN104270104 A CN 104270104A CN 201410496346 A CN201410496346 A CN 201410496346A CN 104270104 A CN104270104 A CN 104270104A
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Abstract
The invention discloses a high-intermodulation power amplifier employing the APD (Amplitude Probability Distribution) technology, and relates to the field of communication equipment. The high-intermodulation power amplifier employing APD technology comprises a first APD module and a second GSM (Global System for Mobile Communications) power amplifier which form a closed-loop link; a radio-frequency signal is input through an input of the first APD module and then processed by predistortion; the signal subjected to predistortion is output through an APD output and then is input through the input of the power amplifier; the nonlinearity in power amplification is accurately compensated through the signal subjected to the predistortion, and the radio frequency signal with small linearity predistortion and high intermodulation can be output through the power amplifier; meanwhile, a feedback signal of the first APD module is obtained by power coupling through an output signal of the GSM power amplifier, and the feedback signal is subjected to predistortion in the first APD module. The high-intermodulation power amplifier employing the APD technology is used as a remote module of a GSM repeater system, and has the characteristics that the structure is simple, and the cost is small; the problem of small power and small coverage range of the GSM repeater system meeting the CE standard can be solved.
Description
Technical field
The present invention relates to communication equipment field, particularly a kind of high intermodulation power amplifier adopting APD technology.
Background technology
Direct discharging station is a kind of radio transmission transferring equipment playing signal enhancing in wireless communication transmissions process, is a kind of equipment that radio communication indoor coverage of signal is conventional.GSM power amplifier is the most important equipment of downlink link in GSM direct discharging station, and its linear power exports the size that size determines GSM direct discharging station signal cover.
Existing gsm wireless repeater coverage system reaches the restriction of-36dBm owing to being subject to the requirement of CE standard in-band intermodulation, in industry, the peak power output of GSM direct discharging station can only arrive 33dBm, CE standard should be met for needs, meet the GSM direct discharging station of larger coverage again, the power output of 33dBm is less than normal, adopts conventional art can not reach the requirement of the more high-power output of GSM direct discharging station.
Meeting the power amplifier obtaining more high-power output under CE standard, needing to adopt predistortion linear technology.Predistortion linear technology is exactly by producing the signal with non-linearity of power amplifier attribute vectors symmetrical complement, eliminating the technology of power amplifier nonlinear distortion.Analog predistortion (APD) and digital pre-distortion (DPD) can be divided into according to the difference of predistorter processing signals.
Summary of the invention
The technical problem to be solved in the present invention:
The peak power output that the object of the invention is for existing GSM direct discharging station is meeting CE standard can only arrive 33dBm, the technical problem that larger power, coverage are limited cannot be exported, invent a kind of high intermodulation power amplifier adopting APD technology, this power amplifier uses as the remote end module of GSM direct discharging station, there is structure simple, the feature of relative inexpensiveness, can solve GSM direct discharging station power output and the little problem of coverage when meeting CE standard.
Solving this technical problem adopted technical scheme is:
For achieving the above object, the present invention adopts following scheme:
Adopt a high intermodulation power amplifier for APD technology, comprise APD module 1, GSM power amplifier 2.APD module 1 and GSM power amplifier 2 form a closed loop link.Radiofrequency signal inputs from APD module 1 input port, radiofrequency signal exports pre-distorted signals by APD delivery outlet after pre-distortion, inputted by power amplifier input port, pre-distorted signals carries out fine compensation to the non-linear of power amplification, the distortion of power amplifier output linearity is very little, the radiofrequency signal of high intermodulation.The feedback signal of APD module 1 is outputed signal by GSM power amplifier 2 and is obtained by coupling power simultaneously, utilizes feedback signal to carry out above-mentioned pre-distortion in APD module 1 inside.The high intermodulation GSM power amplifier of this employing APD technology is different from the GSM power amplifier adopting traditional predistorter to compensate, feature is that linear index is fabulous, when power output reaches 39dBm, its intermodulation index can meet CE standard, reach the level of linearity of feed forward power amplifier, be twice above than the best GSM power amplifier output power meeting CE standard existing in industry, and overall architecture and cost are also cheaper, be applicable to promoting the use of in enormous quantities.
Described APD module 1 comprises input directional coupler, predistortion processing circuit, output directional coupler, feedback signal circuit, module for power supply circuit; Predistortion processing circuit is connected with input directional coupler, output directional coupler, feedback signal circuit, module for power supply circuit respectively, and RF IN interface is connected with input directional coupler, and input directional coupler is connected with output directional coupler; Radiofrequency signal inputs from RF IN interface, one route input directional coupler directly enters output directional coupler, another road is successively through input directional coupler, predistortion processing circuit, output directional coupler, two paths of signals converges output at output directional coupler and forms conjunction road signal, and feedback signal circuit provides the path of the nonlinear distortion signal of power amplifier 2.
Input directional coupler in APD module 1 is realized by 10dB paster directional coupler and 50 ohm load; Predistortion processing circuit is realized by predistortion chip and peripheral circuit; Output directional coupler is realized by 10dB paster directional coupler and 50 ohm load; Feedback signal circuit is realized by 50 ohm microstrip and π type attenuator; Module for power supply circuit is realized by DC/DC power supply chip and peripheral circuit.
Described GSM power amplifier 2 comprises: gain module, digital pad and control circuit, driving amplifier, along separate routes electric bridge, final stage power amplifier pipe one, final stage power amplifier pipe two, conjunction road electric bridge, isolator, microstrip coupler, module for power supply circuit and control circuit; Output directional coupler is connected with gain module, gain module, digital pad and control circuit, driving amplifier, along separate routes electric bridge connect successively, electric bridge is connected with final stage power amplifier pipe one, final stage power amplifier pipe two respectively along separate routes, final stage power amplifier pipe one, final stage power amplifier pipe two are connected with conjunction road electric bridge respectively, close road electric bridge to be connected with microstrip coupler, microstrip coupler is connected with isolator, feedback signal circuit respectively;
The conjunction road signal exported by the output directional coupler in APD module 1 is inputted by power amplifier input port, radiofrequency signal successively through gain module, digital pad and control circuit, driving amplifier, along separate routes electric bridge, final stage power amplifier pipe one, final stage power amplifier pipe two, conjunction road electric bridge, microstrip coupler, isolator, exports finally by radio-frequency joint; The feedback signal of APD module 1 is outputed signal by GSM power amplifier 2 and is obtained by microstrip coupler coupling power.
Gain module in GSM power amplifier 2 is realized by gain amplifier; Digital pad and control circuit realize based on numerical-control attenuator and single chip machine controlling circuit; Driving amplifier is realized by LDMOS power tube; Electric bridge is realized by 3dB paster electric bridge along separate routes; Final stage power amplifier pipe one and final stage power amplifier pipe two are realized by LDMOS power tube; Close road electric bridge to be realized by 3dB paster electric bridge; Isolator is realized by ferrite isolator; Microstrip coupler is realized by the microstrip lines that two-way is parallel.
Described module for power supply circuit and control circuit comprise module for power supply circuit, module control circuit;
Module for power supply circuit comprises power-switching circuit, power supply input and output filter circuit and voltage switcher circuit, and this module provides power supply for each element circuit of power amplifier; Module control circuit comprises numerical control attenuation control, 485 communications, ALC control, power detection, temperature detection, radio frequency and mains switch control, and this module provides various controlling functions for power amplifier; Module for power supply circuit is realized by DC/DC power supply chip and peripheral circuit, and module control circuit is realized by single-chip microcomputer and peripheral circuit.
In such scheme, radiofrequency signal inputs from the RF IN interface of APD module 1, signal is through input directional coupler, one tunnel leads directly to output directional coupler, the coupling sampling of another road is input to predistortion processing circuit, predistortion processing circuit is to the coupled signal of input and carry out pre-distortion after being compared by the distorted signal that feedback circuit feeds back, the pre-distorted signals of output and carry out the laggard line output in conjunction road by output directional coupler with straight-through signal.
Described input directional coupler is 10dB LTCC directional coupler, is used in input and act as and carry out shunt to signal, and a road leads directly to, and 10dB coupling sampling is carried out on a road; Conjunction road is carried out to pre-distorted signals with straight-through signal for output.Described predistortion processing circuit, based on predistortion chip, coordinates input signal sampling and feedback signal sampling, compares and obtain pre-distorted signals, then export both.The module for power supply circuit of APD module 1 is powered to predistortion chip and peripheral circuit.
GSM power amplifier 2 is different from conventional power amplifier, it is AB class magnifying state, the linearity is higher, third order intermodulation reaches-57dBc, fifth order intermodulation reaches-73dBc, intermodulation values more than seven rank and seven rank is less than-73dBc, and the intermodulation index of this GSM power amplifier is coordinated by two-tube state to reach the high performance of the linearity.
In described GSM power amplifier 2, gain module is RFCO2 laser, mainly provides gain to amplify; Digital pad circuit exports low and high level by single-chip microcomputer to control digital pad, thus control the pad value of this circuit, plays the effect of adjustment GSM power amplifier 2 gain; Driving amplifier is the power device in GSM power amplifier 2, provides certain gain and export certain power to reach the power needed for final stage power amplifier pipe for power amplifier, requires the driving amplifier linearity comparatively in this kind of power stage situation simultaneously; Final stage power amplifier pipe is most important device in whole GSM power amplifier 2, and Main Function is in power output, and takes into account certain linear index, mainly in-band intermodulation, the framework that final stage power amplifier pipe one and final stage power amplifier pipe two Compositional balance amplify; Electric bridge and conjunction road electric bridge are 3dB along separate routes, and electric bridge carries out power along separate routes to the power output of driving amplifier along separate routes, closes road electric bridge and carries out gain and power combiner to final stage power amplifier pipe one and final stage power amplifier pipe two; Microstrip coupler be by micro-band before coupling realize coupling, its effect is the nonlinear distortion signal of coupled power amplifier, then feeds back to APD module 1; Isolator is the afterbody of power amplifier, and effect isolates reflected signal, ensures final stage power amplifier pipe steady operation and good output VSWR.Module for power supply circuit comprises power-switching circuit, power supply input and output filter circuit and voltage switcher circuit, for each element circuit of power amplifier provides power supply; Module control circuit comprises numerical control attenuation control, 485 communications, ALC control, power detection, temperature detection, radio frequency and mains switch control etc., for power amplifier provides various controlling functions.
APD module 1 and GSM power amplifier 2 form a closed loop link, the nonlinear distortion that GSM power amplifier 2 produces along with the difference of power output is different, APD module 1 adjusts in real time according to the change of the nonlinear properties of sampling simultaneously, the system of a composition closed-loop control, concrete adjustment process is: when the amplitude of nonlinear properties that the GSM power amplifier 2 that APD module 1 is sampled feeds back and phase place become large, the amplitude of reverse nonlinear properties that APD module 1 adjustment exports and phase place size, correspondingly etc. amplitude and equiphase become large; When the amplitude of nonlinear properties that the GSM power amplifier 2 that APD module 1 is sampled feeds back and phase place diminish, the amplitude of the reverse nonlinear properties that APD module 1 adjustment exports and phase place size, correspondingly etc. amplitude and equiphase diminish; By said process, APD module 1 can tackle the nonlinear properties change of GSM power amplifier 2 in real time, accomplishes real-time adjustment.
APD module 1 and GSM power amplifier 2 are with the use of rear, through the real-time adjustment of the closed-loop system that APD module 1 and GSM power amplifier 2 form, the output intermodulation of GSM power amplifier when power output reaches 38dBm (comprising more than three rank, five rank, seven rank and seven rank) absolute value can reach-38dBm, and relative value is-73dBc.
the advantage that the present invention is compared with the existing technology had, feature or good effect:
Compared to the prior art, tool of the present invention has the following advantages: compare with Conventional power amplifiers, coordinate by adopting APD technology and meet a constant linear GSM power amplifier, when exporting 38dBm, intermodulation index is high, and absolute value reaches-38dBm, relative value reaches-73dBc, be in industry-leading level, GSM direct discharging station can be met meeting the requirement that under CE standard, power output is large, coverage is large, there is practical value.
Accompanying drawing explanation
Fig. 1 is theory diagram of the present invention.
Wherein, directional coupler 1 is input directional coupler, and directional coupler 2 is output directional coupler.
Embodiment
Below in conjunction with accompanying drawing, the present invention is further described:
A kind of high intermodulation power amplifier of the APD of employing technology comprises APD module 1, GSM power amplifier 2, APD module 1 also comprises: input directional coupler, predistortion processing circuit, output directional coupler, feedback signal circuit, module for power supply circuit; Radiofrequency signal inputs from the RF IN interface of APD module 1, signal is through directional coupler, the straight-through road coupling sampling in one tunnel is input to predistortion processing circuit, predistortion processing circuit is to the coupled signal of input and carry out pre-distortion after being compared by the distorted signal that feedback circuit feeds back, the pre-distorted signals of output and carry out the laggard line output in conjunction road by directional coupler with straight-through signal.GSM power amplifier 2 also comprises: gain module, digital pad and control circuit, driving amplifier, along separate routes electric bridge, final stage power amplifier pipe one, final stage power amplifier pipe two, conjunction road electric bridge, isolator, microstrip coupler, module for power supply circuit and control circuit; Signal is input to GSM power amplifier, successively through gain module, digital pad circuit, driving amplifier, along separate routes electric bridge, final stage power amplifier pipe one, final stage power amplifier pipe two, conjunction road electric bridge, microstrip coupler, isolator, export finally by radio frequency connector.
The concrete enforcement principle of APD module 1 is: input directional coupler carries out shunt to the signal that RF IN interface inputs, one tunnel leads directly to, coupling sampling is carried out on one tunnel, and the 10dB degree of coupling selected by directional coupler, the size of main consideration coupled signal and taking into account of the straight-through insertion loss held.Output directional coupler is used for output and carries out conjunction road to pre-distorted signals with straight-through signal, and the degree of coupling of this coupler is also 10dB, and selection principle is with inputting directional coupler.Predistortion processing circuit is based on predistortion chip, and coordinate input signal sampling and feedback signal sampling, compare both and obtain pre-distorted signals, then export, the selection of predistortion chip is key factor, requires that its compensation ability reaches more than 17dBc.Feedback signal circuit provides the feedback path of the nonlinear distortion of power amplifier, in order to reach best predistortion effect, need on signal circuit, add the size that π type attenuator regulates feedback signal, micro-band cabling of feedback path needs special consideration with shielding in addition, can not receive the interference of outer signals or make interference be less than certain level.
The concrete enforcement principle of GSM power amplifier 2 is: gain module is RFCO2 laser, mainly provides gain to amplify; Digital pad and control circuit export low and high level by the single-chip microcomputer in module control circuit to control digital pad, thus control the pad value of this circuit, plays the effect of adjustment GSM power amplifier 2 gain; Driving amplifier is the power device in GSM power amplifier 2, provides certain gain and export certain power to reach the power needed for final stage power amplifier pipe for power amplifier, requires the driving amplifier linearity comparatively in this kind of power stage situation simultaneously; Final stage power amplifier pipe is most important device in whole GSM power amplifier 2, and Main Function is in power output, and takes into account certain linear index, mainly in-band intermodulation, the framework that final stage power amplifier pipe one and final stage power amplifier pipe two Compositional balance amplify; Electric bridge and conjunction road electric bridge are 3dB along separate routes, and electric bridge carries out power along separate routes to the power output of driving amplifier along separate routes, closes road electric bridge and carries out gain and power combiner to final stage power amplifier pipe one and final stage power amplifier pipe two; Microstrip coupler be by micro-band before coupling realize coupling, its effect is the nonlinear distortion signal of coupled power amplifier, then feeds back to APD module 1; Isolator is the afterbody of power amplifier, and effect isolates reflected signal, ensures final stage power amplifier pipe steady operation and good output VSWR.Module for power supply circuit comprises power-switching circuit, power supply input and output filter circuit and voltage switcher circuit, for each element circuit of power amplifier provides power supply; Module control circuit comprises numerical control attenuation control, 485 communications, ALC control, power detection, temperature detection, radio frequency and mains switch control etc., for power amplifier provides various controlling functions.
APD module is the linear compensation module based on predistortion chip, the general principle adopted is input signal and feedback signal sampling, nonlinear distortion signal is isolated according to the contrast of two signals, then reverse pre-distortion is done to nonlinear distortion signal, obtain pre-distorted signals, then export with certain power level value.The compensation effect of APD module depends on range value, the phase value of predistortion of input signal, feedback signal, output, is also closely related with the purity of these three kinds of signals, matching degree.In the application of reality, according to the output level of power amplifier and distortion situation, the size of input signal, feedback signal and pre-distorted signals should be adjusted neatly, to reach best compensation effect.In addition should be specifically noted that the power supply circuits of APD module, it is spuious that power supply circuits can not occur that obvious power supply ripple and power supply add, otherwise can have influence on compensation effect.
The general principle that GSM power amplifier adopts is the requirement being realized higher intermodulation by the back-off of driving amplifier and final stage power amplifier pipe.This power amplifier is different from conventional power amplifier, and it is AB class magnifying state, and the linearity is higher, and its higher intermodulation index is coordinated by two-tube state to reach the high performance of the linearity.Third order intermodulation reaches-57dBc, fifth order intermodulation reaches-73dBc, intermodulation values more than seven rank and seven rank is that-73dBc is less, and coordinate APD module so again, any frequency that can realize in GSM900 band limits all can realize the intermodulation index-38dBm meeting CE index.
Claims (4)
1. adopt a high intermodulation power amplifier for APD technology, it is characterized in that: comprise APD module (1), GSM power amplifier (2), APD module (1) and GSM power amplifier (2) composition closed loop link, radiofrequency signal inputs from APD module (1) input port, radiofrequency signal exports pre-distorted signals by APD delivery outlet after pre-distortion, pre-distorted signals is by the input of GSM power amplifier (2) input port, pre-distorted signals exports to power amplifier produce non-linear and carries out fine compensation, make the distortion of power amplifier output linearity very little and the radiofrequency signal of high intermodulation, GSM power amplifier (2) output signal obtains the feedback signal of APD module (1) by coupling power simultaneously, feedback signal is utilized to carry out above-mentioned pre-distortion in APD module (1) inside.
2. a kind of high intermodulation power amplifier adopting APD technology according to claim 1, is characterized in that: described APD module (1) comprises input directional coupler, predistortion processing circuit, output directional coupler, feedback signal circuit, module for power supply circuit; Predistortion processing circuit is connected with input directional coupler, output directional coupler, feedback signal circuit, module for power supply circuit respectively, and RF IN interface is connected with input directional coupler, and input directional coupler is connected with output directional coupler; Radiofrequency signal inputs from RF IN interface, one route input directional coupler directly enters output directional coupler, another road is successively through input directional coupler, predistortion processing circuit, output directional coupler, two paths of signals converges output at output directional coupler and forms conjunction road signal, and feedback signal circuit provides the path of the nonlinear distortion signal of power amplifier (2).
3. a kind of high intermodulation power amplifier adopting APD technology according to claim 2, is characterized in that: described GSM power amplifier (2) comprising: gain module, digital pad and control circuit, driving amplifier, along separate routes electric bridge, final stage power amplifier pipe one, final stage power amplifier pipe two, conjunction road electric bridge, isolator, microstrip coupler, module for power supply circuit and control circuit; Output directional coupler is connected with gain module, gain module, digital pad and control circuit, driving amplifier, along separate routes electric bridge connect successively, electric bridge is connected with final stage power amplifier pipe one, final stage power amplifier pipe two respectively along separate routes, final stage power amplifier pipe one, final stage power amplifier pipe two are connected with conjunction road electric bridge respectively, close road electric bridge to be connected with microstrip coupler, microstrip coupler is connected with isolator, feedback signal circuit respectively;
The conjunction road signal exported by the output directional coupler in APD module (1) is inputted by power amplifier input port, radiofrequency signal successively through gain module, digital pad and control circuit, driving amplifier, along separate routes electric bridge, final stage power amplifier pipe one, final stage power amplifier pipe two, conjunction road electric bridge, microstrip coupler, isolator, exports finally by radio-frequency joint; The feedback signal of APD module 1 is outputed signal by GSM power amplifier (2) and is obtained by microstrip coupler coupling power.
4. a kind of high intermodulation power amplifier adopting APD technology according to claim 3, is characterized in that: described module for power supply circuit and control circuit comprise module for power supply circuit, module control circuit;
Module for power supply circuit comprises power-switching circuit, power supply input and output filter circuit and voltage switcher circuit, and this module provides power supply for each element circuit of power amplifier; Module control circuit comprises numerical control attenuation control, 485 communications, ALC control, power detection, temperature detection, radio frequency and mains switch control, and this module provides controlling functions for power amplifier.
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| CN201410496346.5A CN104270104A (en) | 2014-09-25 | 2014-09-25 | High-intermodulation power amplifier employing APD (Amplitude Probability Distribution) technology |
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Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
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| CN108988794A (en) * | 2018-09-28 | 2018-12-11 | 京信通信系统（中国）有限公司 | A kind of simulated pre-distortion circuit and analog predistortion linear offset method |
| CN112332788A (en) * | 2020-10-22 | 2021-02-05 | 浙江三维利普维网络有限公司 | Radio frequency power amplifier module |
| CN112583370A (en) * | 2020-12-10 | 2021-03-30 | 中国工程物理研究院电子工程研究所 | Power amplification device with high efficiency and high linearity |
| CN113162559A (en) * | 2021-03-30 | 2021-07-23 | 西南电子技术研究所（中国电子科技集团公司第十研究所） | Millimeter wave self-adaptive predistortion linearized solid-state power amplifier |
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| CN203119844U (en) * | 2013-02-04 | 2013-08-07 | 京信通信系统（中国）有限公司 | Power amplifier |
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| US20090302945A1 (en) * | 2008-06-05 | 2009-12-10 | Raytheon Canada Limited | Linearizing technique for power amplifiers |
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| CN108988794A (en) * | 2018-09-28 | 2018-12-11 | 京信通信系统（中国）有限公司 | A kind of simulated pre-distortion circuit and analog predistortion linear offset method |
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Application publication date: 20150107 |