CN112332788A - Radio frequency power amplifier module - Google Patents
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- CN112332788A CN112332788A CN202011137299.7A CN202011137299A CN112332788A CN 112332788 A CN112332788 A CN 112332788A CN 202011137299 A CN202011137299 A CN 202011137299A CN 112332788 A CN112332788 A CN 112332788A
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- H—ELECTRICITY
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- H03F—AMPLIFIERS
- H03F3/00—Amplifiers with only discharge tubes or only semiconductor devices as amplifying elements
- H03F3/20—Power amplifiers, e.g. Class B amplifiers, Class C amplifiers
- H03F3/24—Power amplifiers, e.g. Class B amplifiers, Class C amplifiers of transmitter output stages
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- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
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- H03F1/00—Details of amplifiers with only discharge tubes, only semiconductor devices or only unspecified devices as amplifying elements
Abstract
The application relates to a radio frequency power amplifier module, which is characterized in that functional units of the radio frequency power amplifier module are respectively arranged on a first circuit board and a second circuit board; the first circuit board comprises a first physical connecting structure and a first electrical interface, and the second circuit board comprises a second physical connecting structure and a second electrical interface; the functional unit of the radio frequency power amplifier module comprises a final power amplifier, and the final power amplifier is arranged on the first circuit board; the first physical connection structure and the second physical connection structure are used for fixing the first circuit board and the second circuit board; the first electrical interface and the second electrical interface are used for providing electrical connection between the first circuit board and the second circuit board, so that the problems of low material reusability and high cost of radio frequency power amplifier products are solved, the development period is shortened, and the storage pressure of a supply chain is relieved.
Description
Technical Field
The application relates to the technical field of communication, in particular to a radio frequency power amplifier module.
Background
With the rapid development of cellular mobile communication technology, the demands for different standards of GSM, CDMA, WCDMA, TD-SCDMA, LTE and NR, to different frequency bands of 800 MHz-3800 MHz and then to different power levels are increasingly diversified in a subdivided market, which brings new challenges to the iterative update of the development of mobile communication products. In the front-stage circuit of the communication product transmitter, the radio frequency signal power generated by the modulation oscillation circuit is very small, and the radio frequency signal can be fed to an antenna to be radiated after sufficient radio frequency power is obtained through a series of amplifying-buffering stage, intermediate amplifying stage and final power amplifying stage. In order to obtain a sufficiently large rf output power, an rf power amplifying module is used. Therefore, the radio frequency power amplification module has wide application as an important component of various mobile communication products.
Because the radio frequency power amplifier products are new and old interweaved, the product requirements are many and wide, and the iteration speed of mobile communication products is high, engineers need to check the requirements of system, frequency band, power and the like one by one, and develop radio frequency power amplifier module products meeting various combination requirements, and the problems of low material reusability, high cost and long development period of the radio frequency power amplifier products can be brought.
At present, no effective solution is provided for the problem of low material reusability of radio frequency power amplifier products in the related technology.
Disclosure of Invention
The embodiment of the application provides a radio frequency power amplifier module, which is used for at least solving the problem of low material reusability of radio frequency power amplifier products in the related technology.
In a first aspect, an embodiment of the present application provides a radio frequency power amplifier module, where functional units of the radio frequency power amplifier module are respectively disposed on a first circuit board and a second circuit board; the first circuit board comprises a first physical connecting structure and a first electrical interface, and the second circuit board comprises a second physical connecting structure and a second electrical interface; the functional unit of the radio frequency power amplifier module comprises a final power amplifier, and the final power amplifier is arranged on the first circuit board; the first connecting structure and the second connecting structure are used for fixing the first circuit board and the second circuit board; the first electrical interface and the second electrical interface are for providing an electrical connection between the first circuit board and the second circuit board.
In some embodiments, other functional units except the final power amplifier in the functional units of the radio frequency power amplifier module are disposed on the second circuit board.
In some embodiments, the rf power amplifier module further includes: a mounting frame including a mounting base for adapting the first physical connection structure and the second physical connection structure; the first circuit board is fixed on the installation frame through the first physical connection structure, and the second circuit board is fixed on the installation frame through the second physical connection structure.
In some embodiments, the second circuit board comprises one or more transmission signal conditioning units, wherein the transmission signal conditioning units are configured to perform impedance transformation and/or phase adjustment on the transmission signal.
In some of these embodiments, the transmission signal conditioning unit comprises a plurality of sets of preconfigured microstrip lines; the signal transmission line for transmitting signals is provided with an interruption point, a plurality of groups of preconfigured microstrip lines are arranged at the interruption point, and gaps exist between the input ends and the output ends of the preconfigured microstrip lines and two ends formed by the interruption point of the signal transmission line.
In some embodiments, the transmission signal adjusting unit comprises a plurality of microstrip line units which are preconfigured, wherein the plurality of microstrip line units comprises a first microstrip line unit and a second microstrip line unit; the signal transmission line for transmitting signals is provided with an interruption point, the first microstrip line unit is arranged at the interruption point, and a gap exists between the input end and the output end of the first microstrip line unit and two ends formed by the interruption point of the signal transmission line; the second microstrip line unit is arranged on one side of the first microstrip line unit, which is relatively far away from the signal transmission line, and a gap exists between the input end and the output end of the second microstrip line unit and the two ends provided by the first microstrip line unit.
In some embodiments, the microstrip line unit includes a U-shaped microstrip line, two ends of the U-shaped microstrip line are respectively an input end and an output end of the microstrip line unit, the first microstrip line unit provides two ends at two sides of the bottom of the U-shaped microstrip line, and the input end and the output end of the second microstrip line unit have a gap with the two ends provided at two sides of the bottom of the U-shaped microstrip line of the first microstrip line unit; the bottom of the U-shaped microstrip line has no interruption point or has an interruption point.
In some of these embodiments, one or more standardized interfaces are provided on the second circuit board, each for connecting a pin-compatible radio frequency filter, circulator, or coupler.
In some embodiments, the rf power amplifier module includes a coupler, the coupler is disposed on the second circuit board, and the coupler is configured to couple an output signal of the final power amplifier; wherein, the coupler is a microstrip line coupler.
In some embodiments, the rf power amplifier module includes a digital predistortion module and an analog predistortion module, wherein the digital predistortion module and the analog predistortion module are both disposed on the second circuit board.
Compared with the prior art, the radio frequency power amplifier module provided by the embodiment of the application is characterized in that the first circuit board and the second circuit board are respectively arranged in the functional units of the radio frequency power amplifier module; the first circuit board comprises a first physical connecting structure and a first electrical interface, and the second circuit board comprises a second physical connecting structure and a second electrical interface; the functional unit of the radio frequency power amplifier module comprises a final power amplifier, and the final power amplifier is arranged on the first circuit board; the first connecting structure and the second connecting structure are used for fixing the first circuit board and the second circuit board; the first electrical interface and the second electrical interface are used for providing electrical connection between the first circuit board and the second circuit board, the problem that the reusability of materials of radio frequency power amplifier products is low is solved, the cost of the radio frequency power amplifier products is reduced, the development period is shortened, and the storage pressure of a supply chain is relieved.
The details of one or more embodiments of the application are set forth in the accompanying drawings and the description below to provide a more thorough understanding of the application.
Drawings
The accompanying drawings, which are included to provide a further understanding of the application and are incorporated in and constitute a part of this application, illustrate embodiment(s) of the application and together with the description serve to explain the application and not to limit the application. In the drawings:
fig. 1 is a schematic structural diagram of a radio frequency power amplifier module according to an embodiment of the present application;
fig. 2 is a schematic structural diagram of a U-shaped microstrip line according to an embodiment of the present application;
fig. 3 is a schematic structural diagram of a radio frequency power amplifier module according to a preferred embodiment of the present application;
fig. 4 is a schematic structural diagram of a U-shaped microstrip line according to a preferred embodiment of the present application;
fig. 5 is a schematic structural diagram of DPD mode in TDD system according to the preferred embodiment of the present application;
FIG. 6 is a schematic diagram illustrating an APD mode structure in a TDD system according to the preferred embodiment of the present application;
fig. 7 is a schematic configuration diagram of an FDD system according to a preferred embodiment of the present application;
fig. 8 is a schematic diagram of a PCB board of a final stage power amplifier separated from a main control board according to a preferred embodiment of the present application.
Detailed Description
In order to make the objects, technical solutions and advantages of the present application more apparent, the present application will be described and illustrated below with reference to the accompanying drawings and embodiments. It should be understood that the specific embodiments described herein are merely illustrative of the present application and are not intended to limit the present application. All other embodiments obtained by a person of ordinary skill in the art based on the embodiments provided in the present application without any inventive step are within the scope of protection of the present application. Moreover, it should be appreciated that in the development of any such actual implementation, as in any engineering or design project, numerous implementation-specific decisions must be made to achieve the developers' specific goals, such as compliance with system-related and business-related constraints, which may vary from one implementation to another.
Reference in the specification to "an embodiment" means that a particular feature, structure, or characteristic described in connection with the embodiment can be included in at least one embodiment of the specification. The appearances of the phrase in various places in the specification are not necessarily all referring to the same embodiment, nor are separate or alternative embodiments mutually exclusive of other embodiments. Those of ordinary skill in the art will explicitly and implicitly appreciate that the embodiments described herein may be combined with other embodiments without conflict.
Unless defined otherwise, technical or scientific terms referred to herein shall have the ordinary meaning as understood by those of ordinary skill in the art to which this application belongs. Reference to "a," "an," "the," and similar words throughout this application are not to be construed as limiting in number, and may refer to the singular or the plural. The present application is directed to the use of the terms "including," "comprising," "having," and any variations thereof, which are intended to cover non-exclusive inclusions; for example, a process, method, system, article, or apparatus that comprises a list of steps or modules (elements) is not limited to the listed steps or elements, but may include other steps or elements not expressly listed or inherent to such process, method, article, or apparatus. Reference to "connected," "coupled," and the like in this application is not intended to be limited to physical or mechanical connections, but may include electrical connections, whether direct or indirect. Reference herein to "a plurality" means greater than or equal to two. "and/or" describes an association relationship of associated objects, meaning that three relationships may exist, for example, "A and/or B" may mean: a exists alone, A and B exist simultaneously, and B exists alone. Reference herein to the terms "first," "second," "third," and the like, are merely to distinguish similar objects and do not denote a particular ordering for the objects.
The various techniques described herein may be used in various Wireless communication systems, such as 2G, 3G, 4G, 5G communication systems and next generation communication systems, such as Global System for Mobile communications (GSM), Code Division Multiple Access (CDMA), Time Division Multiple Access (TDMA), Wideband Code Division Multiple Access (OFDMA), Frequency Division Multiple Access (WCDMA), Frequency Division Multiple Access (FDMA), Orthogonal Frequency Division Multiple Access (OFDMA), FDMA-System, General Packet Radio Service (GPRS), LTE-5G (Radio System for Long Term Evolution (LTE), abbreviated NR) systems and other such communication systems.
The Radio frequency power amplifier module provided in this embodiment may be integrated in a base station, a Radio Remote Unit (Radio Remote Unit, abbreviated as RRU), or any other network element device that needs to perform Radio frequency transceiving. A base station in this context may be a device in an access network that communicates over the air-interface, through one or more sectors, with wireless terminals. The base station may be configured to interconvert received air frames with Internet Protocol (IP) packets as a router between the wireless terminal and the rest of the access network, which may include an IP network. The base station may also coordinate management of attributes for the air interface. For example, the Base Station may be a Base Transceiver Station (BTS) in GSM or CDMA, a Base Station (Node B) in WCDMA, an evolved Node B (eNB or e-Node B) in LTE, or a generation Node B (gNB) in 5G NR, and the present application is not limited thereto. Before describing and explaining embodiments of the present application, a description will be given of the related art used in the present application as follows:
microstrip line: the microstrip line is a printed conductor which is positioned on a grounding layer and separated by a dielectric medium, and is a strip conductor (signal line) separated from a grounding layer by a dielectric medium, and the thickness and the width of the printed conductor, the distance between the printed conductor and the ground layer and the dielectric constant of the dielectric medium determine the characteristic impedance of the microstrip line. If the thickness, width and distance from the ground plane of the wire is controllable, its characteristic impedance can also be controlled. The propagation delay time per unit length of the microstrip line depends only on the dielectric constant and is independent of the width or spacing of the lines.
Predistortion, namely, a predistortion module (PD) with the characteristic opposite to the characteristic response of a power amplifier element is inserted between an input signal and the power amplifier element (PA), the input signal is subjected to pre-distortion, and then the input signal is sent to the power amplifier element to compensate AM-AM (amplitude distortion) and AM-PM (phase distortion) generated by a nonlinear power amplifier element, and finally the input and the output of the whole predistortion module (PD) and power amplifier element (PA) cascade circuit present a linear relation. Digital Pre-Distortion (DPD) is mainly used to perform predistortion processing on signals with a single carrier being a wideband signal (5MHz-100MHz), and Digital predistortion is performed through an internally integrated DPD algorithm.
Analog Pre-Distortion (APD) is mainly used for Pre-Distortion processing of signals with single carrier being narrow-band signals (200KHz to 5 MHz). Meanwhile, analog predistortion is mainly used in radio frequency predistortion.
Time division duplex: time Division Duplexing (TDD) uses a common radio frequency point for transmitting and receiving, and different Time slots are used for uplink and downlink communications.
Frequency division duplexing: frequency Division Duplexing (FDD) uses different rf Frequency points for transmission and reception.
pin to pin: the functional pins of the chips are the same, and the chips can be interchanged.
This embodiment provides a radio frequency power amplifier module, fig. 1 is a schematic structural diagram of the radio frequency power amplifier module according to the embodiment of this application, and as shown in fig. 1, the radio frequency power amplifier module includes: a first circuit board 200, a second circuit board 100, a final power amplifier 201, a first physical connection structure 203, a first electrical interface 202, a second physical connection structure 106, a second electrical interface 105, a transmission signal conditioning unit 103, and a mounting frame 300. Wherein the first circuit board 200 comprises a first physical connection structure 203 and a first electrical interface 202, and the second circuit board 100 comprises a second physical connection structure 106 and a second electrical interface 106; the functional unit of the radio frequency power amplifier module comprises a final power amplifier 201, wherein the final power amplifier 201 is arranged on a first circuit board 200; the first physical connection structure 203 and the second physical connection structure 106 are used for fixing the first circuit board 200 and the second circuit board 100; the first electrical interface 202 and the second electrical interface 105 are used to provide an electrical connection between the first circuit board 200 and the second circuit board 100.
In this embodiment, other functional units except the final power amplifier 201 in the functional units of the rf power amplifier module are all disposed on the second circuit board 100.
In this embodiment, the rf power amplifier module further includes: a mounting frame 300, the mounting frame 300 comprising a mounting base 301 for adapting the first physical connection structure 203 and the second physical connection structure 106; the first circuit board 200 is fixed to the mounting frame 300 by the first physical connection structure 203, and the second circuit board 100 is fixed to the mounting frame 300 by the second physical connection structure 106.
In the present embodiment, the second circuit board 100 includes one or more transmission signal adjusting units 103, wherein the transmission signal adjusting units 103 are used for performing impedance conversion and/or phase adjustment on the transmission signal.
In some optional embodiments, the position and number of the signal adjusting unit 103 in the second circuit board 100 are not fixed, and may be selectively placed between the first gain adjusting unit 101 and the predistortion unit 102, before the first gain adjusting unit 101, between the predistortion unit 102 and the transmission signal adjusting unit 103, and/or after the transmission signal adjusting unit 103. In this way, the impedance conversion and/or the phase adjustment of the transmission signal are performed by adding the signal adjusting unit.
In the present embodiment, the transmission signal adjusting unit 103 includes a plurality of sets of preconfigured microstrip lines; the signal transmission line for transmitting signals is provided with an interruption point, a plurality of groups of preconfigured microstrip lines are arranged at the interruption point, and gaps exist between the input ends and the output ends of the preconfigured microstrip lines and two ends formed by the interruption point of the signal transmission line. Different microstrip line lengths are obtained by filling conductors in the gaps, and different carrier frequencies and carrier wavelengths are supported to pass through the transmission signal adjusting unit 103.
In this embodiment, the transmission signal adjusting unit 103 includes a plurality of microstrip line units preconfigured, where the plurality of microstrip line units includes a first microstrip line unit and a second microstrip line unit; the signal transmission line for transmitting signals is provided with an interruption point, the first microstrip line unit is arranged at the interruption point, and a gap exists between the input end and the output end of the first microstrip line unit and two ends formed by the interruption point of the signal transmission line; the second microstrip line unit is arranged on one side of the first microstrip line unit, which is relatively far away from the signal transmission line, and a gap exists between the input end and the output end of the second microstrip line unit and the two ends provided by the first microstrip line unit. The first microstrip line is obtained by filling a gap formed by the first microstrip line unit and two ends of the signal transmission line, the second microstrip line is obtained by filling a gap formed by the second microstrip line unit and two ends of the first microstrip line unit, and the first microstrip line and the second microstrip line can support transmission signals passing through different carrier frequencies and carrier wavelengths.
In one optional embodiment, the microstrip line unit includes a U-shaped microstrip line, a schematic structural diagram of the U-shaped microstrip line is shown in fig. 2, two ends of the U-shaped microstrip line are respectively an input end and an output end of the microstrip line unit, the first microstrip line unit provides two ends at two sides of the bottom of the U-shaped microstrip line, and the input end and the output end of the second microstrip line unit respectively have a gap with the two ends provided at two sides of the bottom of the U-shaped microstrip line of the first microstrip line unit; the bottom of the U-shaped microstrip line has no interruption point or has an interruption point. The first U-shaped microstrip line is obtained by filling a gap formed by the U-shaped microstrip line of the first microstrip line unit and two ends of the signal transmission line, the second U-shaped microstrip line is obtained by filling a gap formed by the U-shaped microstrip line of the second microstrip line unit and two ends of the U-shaped microstrip line of the first microstrip line unit, and the first U-shaped microstrip line and the second U-shaped microstrip line can support transmission signals passing different carrier frequencies and carrier wavelengths.
In this embodiment, one or more standardized interfaces are provided on the second circuit board 100, each standardized interface is used for connecting the pin-compatible first gain adjusting unit 101, the predistortion unit 102, the primary power amplifying unit 104 and the feedback unit 107, the first gain adjusting unit 101 includes a radio frequency filter, the feedback unit 107 includes a circulator and a coupler, the coupler is disposed on the second circuit board, and the coupler is used for coupling the output signal of the final power amplifier; wherein, the coupler is a microstrip line coupler. By the method, the coupling signal when the high-power signal passes is supported.
In one optional implementation, the predistortion unit 102 includes a digital predistortion module and an analog predistortion module, where the digital predistortion module and the analog predistortion module are both disposed on the second circuit board. The digital predistortion module is realized by adopting an integrated digital processing chip, wherein the integrated digital processing chip is provided with a DSP functional block, DPD correction can be realized, and in some cases, the integrated digital processing chip does not support DPD correction of a private network frequency band, so in the embodiment of the application, for a private network product of a special private network frequency band, signal correction needs to be realized through an APD function, and output linearity meeting the product requirement can be obtained. The embodiment of the application also realizes the correction of the narrow-band signal through the APD function, and is used for solving the problem that the correction effect of the narrow-band signal with the DPD algorithm processing frequency in the range of 200 KHz-5 MHz is not ideal.
Fig. 3 is a schematic structural diagram of a radio frequency power amplifier module according to a preferred embodiment of the present application, and as shown in fig. 3, a second circuit board 100 in this embodiment is a main control board, and fig. 8 is a schematic diagram of a PCB board of a final stage power amplifier according to the preferred embodiment of the present application separated from the main control board, where 401 is the final stage power amplifier PCB board, and 402 is the main control board. The radio frequency power amplifier module further comprises a second gain adjusting unit 109, and the first gain adjusting unit 101 comprises a radio frequency filter 18 and a digital controlled attenuator 19; the predistortion unit 102 comprises a microwave capacitor 11, a microwave capacitor 12, a microwave capacitor 13, a microwave capacitor 14, a microstrip delay line 15, a directional coupler 16, a directional coupler 17 and an APD chip 110; the feedback unit 107 comprises a microwave coupler 113, a circulator 114, a microwave switch 115 and a load resistor 116, wherein the microwave switch 115 comprises 1, 2 and 3 ports. Through the mode, in the design of a high-power radio frequency power amplifier platform, a small part of final-stage power amplifier circuits are split, flexible development and design are carried out, in a main control board, a large number of ultra-wideband radio frequency chip type selection and passive frequency device design of pin to pin pins with the packaging size are adopted, the multi-system, multi-band and multi-power-grade radio frequency power amplifier requirements are designed on a radio frequency power amplifier technical platform in a common PCB (printed circuit board) and common mode blocking mode, the material reusability of high-power radio frequency power amplifier products is greatly improved, the development period and the cost are reduced, and the storage pressure of a supply chain is relieved.
IN this embodiment, a downlink signal is accessed through a downlink signal input port TX _ IN, and after the gain is adjusted by the radio frequency filter 18 and the numerical control attenuator 19, the microwave capacitor 11 and the microwave capacitor 12 are selectively welded to enter a DPD mode, and the microwave capacitor 13 and the microwave capacitor 14 are selectively welded to enter an APD mode. Through the above manner, the predistortion unit 102 adopts a mode of coexistence of the analog predistortion APD and the digital predistortion DPD, and the DPD is mainly used to reduce the cost; and APD is used as an auxiliary to improve the adaptability of the predistortion scheme. The APD has strong correction capability on the narrow-band signal, and supplements the application scene of the DPD on the occasion which cannot be qualified. For example, in signal application scenarios such as GSM and NB-IOT with a single carrier bandwidth of 200K, and private network frequency band applications that cannot be supported by part of DPD, microwave capacitor welding is used in all sampling signal input, correction signal output, and feedback signal channels to switch predistortion to APD mode.
In this embodiment, after the transmission signal adjusting unit 103 performs impedance conversion and/or phase adjustment, the signal reaches a required power level after being amplified by the primary power amplifying unit 104 and the final power amplifier 201 of the downlink main channel, and then reaches the downlink signal output port TX _ OUT through the circulator 114, and at this time, the TDD and FDD systems may be switched by selecting the microwave switch 115, the microwave capacitor 117, and the microwave capacitor 118; in the TDD mode, the microwave switch 115 is connected to ports 1 and 3, and the downlink reflected signal is received by the load resistor 116; when the microwave switch 115 is connected with the ports 1 and 2, an uplink signal is accessed through the uplink signal input port ANT, passes through the circulator 114, is selectively welded with the microwave capacitor 117, is accessed into the uplink main channel at the moment, and reaches the uplink signal output port RX _ OUT after the signal gain is adjusted through the second gain adjusting unit 109; IN the FDD mode, on the one hand, the microwave switch 115 is connected to the ports 1 and 3, the downlink reflected signal is received by the load resistor 116, on the other hand, the uplink signal is input from the uplink signal input port RX _ IN, and after the microwave capacitor 118 is selectively welded, the signal is input into the uplink main channel. In this embodiment, a feedback signal required by predistortion is collected by the microstrip directional coupler 115, and if the microwave capacitor 111 is selected to be welded, the signal reaches the DPD feedback signal output port FB _ DPD, and at this time, the signal is connected to the external digital board DPD function module; if the microwave capacitor 112 is selected to be welded, the signal is connected to the feedback port FB _ APD of the APD chip. In the above manner, in the uplink receiving link, the microwave switch 115 is used as a mode switching device to adjust the direction of the uplink signal in the TDD link and the FDD link.
It should be noted that, in the embodiment of the present application, the main control unit 119 includes, but is not limited to, one of the following: singlechip, PFGA and DSP.
It should be noted that, in the present embodiment, the primary power amplifying unit 104 and the final power amplifier 201 constitute a radio frequency amplifier, which includes, but is not limited to, a Doherty amplifier. Meanwhile, in this embodiment, the predistortion system 102 performs predistortion processing on the input radio frequency power amplifier signals with different signal frequencies and signal bandwidths, and then performs amplification through the cascaded radio frequency amplifiers, and the predistortion of the predistortion system 102 compensates for the nonlinear distortion of the radio frequency amplifiers, so that the input and the output of the radio frequency amplifiers present a linear relationship, and the radio frequency amplifiers adapt to modulation of multiple bands and multiple systems.
In this embodiment, the main control unit 119 is connected to the predistortion unit 102 through SPI serial communication.
In this embodiment, the transmission signal adjusting unit 103 includes a plurality of preconfigured microstrip line units, each microstrip line unit includes a U-shaped microstrip line, a schematic structural diagram of the U-shaped microstrip line is shown in fig. 2, two ends of the U-shaped microstrip line are respectively an input end and an output end of the microstrip line unit, the first microstrip line unit provides two ends on two sides of the bottom of the U-shaped microstrip line, and the input end and the output end of the second microstrip line unit respectively have a gap with the two ends provided on two sides of the bottom of the U-shaped microstrip line of the first microstrip line unit; the bottom of the U-shaped microstrip line has no interruption point or has an interruption point. The first U-shaped microstrip line is obtained by filling a gap formed by the U-shaped microstrip line of the first microstrip line unit and two ends of the signal transmission line, the second U-shaped microstrip line is obtained by filling a gap formed by the U-shaped microstrip line of the second microstrip line unit and two ends of the U-shaped microstrip line of the first microstrip line unit, and the first U-shaped microstrip line and the second U-shaped microstrip line can support transmission signals passing different carrier frequencies and carrier wavelengths.
In this embodiment, in the second circuit board 100, that is, in the main control board PCB, since the same PCB needs to be used at different frequencies, the design problem of the radio frequency microstrip line with different frequencies is introduced, and as can be known from the radio frequency microstrip line theory, the characteristic impedance formula of the radio frequency microstrip line with different frequencies is as follows:
wherein Z is0Is the characteristic impedance of the printed circuit board microstrip line, ∈ r is the dielectric constant of the insulating material, h is the distance between the printed circuit board microstrip line and the reference plane, w is the width of the printed circuit board microstrip line, and t is the thickness of the printed circuit board microstrip line.
From the above formula, it can be found that, when a signal is transmitted on a printed circuit board on a microstrip line, the width of the microstrip line etched on the printed circuit board is unrelated to the carrier frequency of the transmitted signal, and when the characteristic impedance of the radio frequency microstrip line is fixed, the width of the microstrip line is determined by a PCB board and a board manufacturing process, thereby providing a theoretical basis for the board sharing use of products with different frequencies on the main control board, and therefore, in this embodiment, the 50 Ω characteristic impedance of the microstrip line on the main control board PCB uniformly uses microstrip lines with a width of 1.1mm under different frequencies.
In addition, in the design of the main control board PCB, under some circumstances, such as when impedance conversion is performed on the microstrip line or when the phase of the transmission signal is adjusted, the influence of the frequency and the wavelength of the signal on the length of the microstrip line needs to be considered, for example, under a specific frequency, a section of microstrip line with 1/4 wavelengths needs to be etched on the PCB, and at this time, microstrip lines with different lengths need to be correspondingly etched in the PCB under different frequencies, and the formula of the frequency and the wavelength is as follows:
in the same printed circuit board, the carrier wavelength is inversely proportional to the carrier frequency, and when microstrip lines with different frequencies and special wavelength requirements are designed, the length of the corresponding microstrip line to be etched in the PCB is different, and at this time, a PCB layout compatible design mode needs to be adopted.
In this embodiment, according to the above formula of frequency and wavelength, when 1/4 λ microstrip lines are required, the lengths of microstrip lines to be etched at 0.9GHz, 1.8GHz, 2.6GHz and 3.5GHz are 21mm, 10.5mm, 7.27mm and 5.4mm, respectively, as shown in the schematic diagram of etching 1/4 λ microstrip lines in PCB 4, microstrip lines at 3.5GHz are obtained by filling gaps 27 and 28 with conductors, microstrip lines at 2.6GHz are obtained by filling gaps 25, 26, 21, 22, 33 and 34 with conductors, microstrip lines at 1.8GHz are obtained by filling gaps 25, 26, 21, 22, 23 and 24 with conductors, and microstrip lines at 0.9GHz are obtained. Through the mode, microstrip lines adaptive to different frequencies can be designed, the usability of the common-board design of the main control board PCB is enhanced, and theoretical guarantee is provided for adapting to more product requirements.
An embodiment of the present application provides a DPD mode in a TDD system, and fig. 5 is a schematic structural diagram of the DPD mode in the TDD system according to the embodiment of the present application. In a DPD mode of the TDD system, a downlink signal is selectively welded with a microwave capacitor 11 and a microwave capacitor 12 and then is accessed into a downlink signal main channel, an uplink signal is accessed from an uplink signal input port ANT, and is selectively welded with a microwave capacitor 117 and then is accessed into an uplink signal main channel after being connected with ports 1 and 2 through a circulator and a microwave switch 115, wherein a DPD feedback signal is collected by a microstrip directional coupler 113 and then is selectively welded with the microwave capacitor 111 to reach a DPD feedback signal output port FB _ DPD, and the signal is accessed into an external digital board DPD function module.
An embodiment of the present application provides an APD mode in a TDD system, and fig. 6 is a schematic structural diagram in the APD mode in the TDD system according to the embodiment of the present application. In an APD mode of the TDD system, after a downlink signal is selectively welded with a microwave capacitor 13 and passes through a 0-4 ns microstrip time delay line 15, a welding microwave capacitor 14 is selectively returned to a downlink signal main channel, wherein an APD input correction signal is collected by a directional coupler 16, an APD output correction signal is coupled to the downlink signal main channel by a directional coupler 17, and after an APD feedback signal is collected by a microstrip directional coupler 113, a microwave capacitor 112 is selectively welded, reaches an APD feedback signal input port FB _ APD and is connected into an APD chip.
An embodiment of the present application provides an FDD system, and fig. 7 is a schematic structural diagram of an FDD system according to an embodiment of the present application. IN the DPD mode of the FDD system, the microwave switch 115 is connected to ports 1 and 3, the downlink reflected signal is received by the load resistor 116, the uplink signal is input from the uplink signal input port RX _ IN, the welding microwave capacitor 118 is selected, and the signal reaches the uplink signal output port RX _ OUT after the signal gain is adjusted by the second gain adjustment unit 109.
It should be understood by those skilled in the art that various features of the above embodiments can be combined arbitrarily, and for the sake of brevity, all possible combinations of the features in the above embodiments are not described, but should be considered as within the scope of the present disclosure as long as there is no contradiction between the combinations of the features.
The above examples only express several embodiments of the present application, and the description thereof is more specific and detailed, but not construed as limiting the scope of the invention. It should be noted that, for a person skilled in the art, several variations and modifications can be made without departing from the concept of the present application, which falls within the scope of protection of the present application. Therefore, the protection scope of the present patent shall be subject to the appended claims.
Claims (10)
1. A radio frequency power amplifier module is characterized in that functional units of the radio frequency power amplifier module are respectively arranged on a first circuit board and a second circuit board; the first circuit board comprises a first physical connecting structure and a first electrical interface, and the second circuit board comprises a second physical connecting structure and a second electrical interface; the functional unit of the radio frequency power amplifier module comprises a final power amplifier, and the final power amplifier is arranged on the first circuit board; the first physical connection structure and the second physical connection structure are used for fixing the first circuit board and the second circuit board; the first electrical interface and the second electrical interface are for providing an electrical connection between the first circuit board and the second circuit board.
2. The RF power amplifier module of claim 1, wherein functional units of the RF power amplifier module except the final power amplifier are disposed on the second circuit board.
3. The rf power amplifier module of claim 1, further comprising: a mounting frame including a mounting base for adapting the first physical connection structure and the second physical connection structure; the first circuit board is fixed on the mounting frame through the first physical connection structure, and the second circuit board is fixed on the mounting frame through the second physical connection structure.
4. The RF power amplifier module of claim 1, wherein the second circuit board comprises one or more transmission signal adjusting units, and wherein the transmission signal adjusting units are configured to perform impedance transformation and/or phase adjustment on the transmission signal.
5. The RF power amplifier module of claim 4, wherein the transmission signal adjusting unit comprises a plurality of sets of preconfigured microstrip lines; the signal transmission line for transmitting signals is provided with an interruption point, a plurality of groups of the preconfigured microstrip lines are arranged at the interruption point, and gaps exist between the input end and the output end of each preconfigured microstrip line and two ends formed by the interruption point of the signal transmission line.
6. The RF power amplifier module of claim 4, wherein the transmission signal adjusting unit comprises a plurality of microstrip line units which are pre-configured, wherein the plurality of microstrip line units comprises a first microstrip line unit and a second microstrip line unit; the first microstrip line unit is arranged at the interruption point, and a gap exists between the input end and the output end of the first microstrip line unit and two ends formed by the interruption point of the signal transmission line; the second microstrip line unit is arranged on one side of the first microstrip line unit, which is relatively far away from the signal transmission line, and a gap is formed between the input end and the output end of the second microstrip line unit and two end heads provided by the first microstrip line unit.
7. The RF power amplifier module of claim 6, wherein the microstrip line unit comprises a U-shaped microstrip line, two ends of the U-shaped microstrip line are respectively an input end and an output end of the microstrip line unit, the first microstrip line unit provides two ends at two sides of the bottom of the U-shaped microstrip line, and the input end and the output end of the second microstrip line unit have a gap with the two ends provided at two sides of the bottom of the U-shaped microstrip line of the first microstrip line unit; the bottom of the U-shaped microstrip line has no interruption point or has an interruption point.
8. The rf power amplifier module of claim 1, wherein one or more standardized interfaces are provided on the second circuit board, each standardized interface for connecting to a pin-compatible rf filter, circulator, or coupler.
9. The RF power amplifier module of claim 1, wherein the RF power amplifier module comprises a coupler disposed on the second circuit board, the coupler configured to couple an output signal of the final power amplifier; wherein the coupler is a microstrip line coupler.
10. The RF power amplifier module of claim 1, wherein the RF power amplifier module comprises a digital pre-distortion module and an analog pre-distortion module, and wherein the digital pre-distortion module and the analog pre-distortion module are both disposed on the second circuit board.
Priority Applications (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202011137299.7A CN112332788A (en) | 2020-10-22 | 2020-10-22 | Radio frequency power amplifier module |
| PCT/CN2021/091058 WO2022083098A1 (en) | 2020-10-22 | 2021-04-29 | Radio frequency power amplification module |
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| Application Number | Priority Date | Filing Date | Title |
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| CN202011137299.7A CN112332788A (en) | 2020-10-22 | 2020-10-22 | Radio frequency power amplifier module |
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| CN112332788A true CN112332788A (en) | 2021-02-05 |
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| CN202011137299.7A Pending CN112332788A (en) | 2020-10-22 | 2020-10-22 | Radio frequency power amplifier module |
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| WO (1) | WO2022083098A1 (en) |
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| WO2022083098A1 (en) * | 2020-10-22 | 2022-04-28 | 浙江三维利普维网络有限公司 | Radio frequency power amplification module |
| CN117452189A (en) * | 2023-12-22 | 2024-01-26 | 深圳市瀚强科技股份有限公司 | Radio frequency power detection method and related device |
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| WO2022083098A1 (en) | 2022-04-28 |
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