CN203596755U - RFID rectifier with high efficiency and rectifier units - Google Patents
RFID rectifier with high efficiency and rectifier units Download PDFInfo
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- CN203596755U CN203596755U CN201320706510.1U CN201320706510U CN203596755U CN 203596755 U CN203596755 U CN 203596755U CN 201320706510 U CN201320706510 U CN 201320706510U CN 203596755 U CN203596755 U CN 203596755U
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Abstract
The utility model discloses an RFID rectifier with high efficiency and rectifier units. The RFID rectifier is characterized by comprising n stages of rectifier units. The rectifier units are characterized in that, the output end of the first stage rectifier unit is connected with the input end of the second stage rectifier unit; the output end of the second stage rectifier unit is connected with the input end of the third stage rectifier unit; and so on, the output end of the n-1 stage rectifier unit is connected with the input end of the n stage rectifier unit; the radio frequency input ends of each rectifier unit are all connected. Each rectifier unit comprises a first bootstrap circuit, a second bootstrap circuit, a fourth rectification field-effect tube, a fifth rectification field-effect tube, a blocking capacitor and an energy-storage capacitor. The first bootstrap circuit and the second bootstrap circuit provide direct current bias for grid electrodes of the fourth rectification field-effect tube and the fifth rectification field-effect tube respectively. The substrate of the fourth rectification field-effect tube and the source electrode of the fifth rectification field-effect tube are connected with the output ends of the rectifier units, and connected with the ground through the energy-storage capacitor. The RFID rectifier raises sensitivity and communication distance of RFID electronic tags effectively and has good application prospects.
Description
Technical field
The utility model relates to rectifier, is specifically related to efficient RFID rectifier and rectification unit.
Background technology
RFID electronic tag is a kind of vitals of being used widely in radio communication, and it can be applied to the fields such as herding, cold chain, traffic, gate inhibition's safety, identification, material handling, control automatically, Theft-proof and anti-counter.Along with the fast development of RFID technology, the requirement of the index such as sensitivity, power consumption to RFID label is more and more higher, and the requirement of the aspect such as cost, technique to RFID is also more and more harsher.The effect of rectifier in RFID label be by RFID antenna reception to RF signal convert direct current power to for other each unit module (as: oscillator, benchmark, modulator, demodulator, digital protocol module, memory) power supply.The power of rectifier efficiency height and carrying load ability is the two large important indicators that determine rectifier performance.
Shown in Fig. 1, be existing RFID rectifier circuit structure, the diode in Fig. 1 adopts Schottky diode conventionally, and Schottky diode has relatively little cut-in voltage, is about between 200mV-300mV.The rectifier that uses Schottky diode to form can obtain larger power conversion efficiency, but incompatible with conventional CMOS technique, and needs expensive processing step.Fig. 2 is the rectifier that adopts the metal-oxide-semiconductor of diode link to form, and the NMOS field effect transistor that it is connected by two diodes has formed unit voltage multiplier.Input signal is by V
rFcoupling capacitance C
cinput, rectification is exported by V
dCend output, effective cut-in voltage of this class formation is no better than the threshold voltage of metal-oxide-semiconductor field effect transistor, little more a lot of than the cut-in voltage of PN junction type diode, more much larger than the cut-in voltage of Schottky diode.Thus, adopt the rectifier of this structure to can not get large power conversion efficiency.At present, RFID research direction is to reduce the power loss of rectifying device self by technique, device and circuit structure many aspects, thereby improves the rectification efficiency of rectifier circuit.As adopt the technology of silicon-on-sapphire technology, Schottky diode or low turn-on threshold voltage.But needs are adopted expensive process materials by these technology, or increase process complexity, affected cost and the application of RFID.
Utility model content
One of technical problem to be solved in the utility model is to provide efficient RFID rectifier; Rectification efficiency up to 30%, RFID tag sensitivity up to-14dBm.
Two of technical problem to be solved in the utility model is to provide efficient RFID rectifier unit.
First technical scheme of the present utility model is, efficient RFID rectifier, comprises n level rectifier unit, and n is more than or equal to 1 natural number; Rectifier converts RF signal to direct voltage for other each unit module power supply; It is characterized in that: the input of first order rectifier unit output termination second level rectifier unit, the output of second level rectifier unit connects the input of third level rectifier unit; The like, the input of n-1 level rectifier unit output termination n level rectifier unit; The rf inputs of every grade of rectifier unit is all connected; And every grade of rectifier unit includes first, second boostrap circuit, the 4th, the 5th rectification field effect transistor, capacitance and storage capacitor; First, second boostrap circuit is respectively the 4th, the grid of the 5th rectification field effect transistor provides direct current biasing; The source electrode of the substrate of the 4th rectification field effect transistor and the 5th rectification field effect transistor connects rectifier unit output, and by storage capacitor ground connection; The source electrode of the substrate of the 5th rectification field effect transistor and the 4th rectification field effect transistor connects rectifier unit input; Four, the drain electrode of the 5th rectification field effect transistor all connects rectifier unit rf inputs by capacitance.
The utility model utilizes rectifier unit cascade, rectifier unit output voltage is improved step by step, and utilize the substrate of rectification field effect transistor, the substrate of the rectification field effect transistor that connects rectifier unit input is connected with rectifier unit output, the substrate of the rectification field effect transistor that connects rectifier unit output is connected with rectifier unit input, reduce effective cut-in voltage, improve rectification efficiency; Adopt boostrap circuit for rectification field effect transistor provides constant bias voltage simultaneously, reduce effective cut-in voltage of rectification field effect transistor, reduce forward conduction loss, improve conversion efficiency.In the time that the amplitude of RF signal is less than the threshold voltage of metal-oxide-semiconductor field effect transistor, rectifier also can normally be worked, and receiving sensitivity is higher.And the metal-oxide-semiconductor field effect transistor rectifier of common diode link type only has in the time that the amplitude of RF signal is greater than the threshold voltage of metal-oxide-semiconductor field effect transistor, rectifier could normally be worked, and receiving sensitivity is lower.
According to a kind of preferred version of efficient RFID rectifier described in the utility model, the first boostrap circuit comprises field effect transistor the one, six, the 6th capacitance and the 3rd bootstrap capacitor; The source electrode of the grid of field effect transistor one and field effect transistor six all connects rectifier unit input, the grid of field effect transistor six and the source electrode of field effect transistor one are connected the grid of the 4th rectification field effect transistor simultaneously, and connecing rectifier unit input by the 3rd bootstrap capacitor, the source electrode of the drain electrode of field effect transistor one and field effect transistor six all connects rectifier unit rf inputs by the 6th capacitance;
The second boostrap circuit comprises field effect transistor two, three, the first capacitance and the 4th bootstrap capacitor; The source electrode of the grid of field effect transistor two and field effect transistor three all connects rectifier unit output, the grid of field effect transistor three and the drain electrode of field effect transistor two are connected the grid of the 5th rectification field effect transistor simultaneously, and connecing rectifier unit output by the 4th bootstrap capacitor, the drain electrode of the source electrode of field effect transistor two and field effect transistor three all connects rectifier unit rf inputs by the first capacitance.
According to a kind of preferred version of efficient RFID rectifier described in the utility model, n level rectifier unit is six grades of rectifier units.
Second technical scheme of the present utility model is that efficient RFID rectifier unit, is characterized in: this rectifier unit comprises first, second boostrap circuit, the 4th, the 5th rectification field effect transistor, capacitance and storage capacitor; First, second boostrap circuit is respectively the 4th, the grid of the 5th rectification field effect transistor provides direct current biasing, the source electrode of the substrate of the 4th rectification field effect transistor and the 5th rectification field effect transistor connects rectifier unit output, the source electrode of the substrate of the 5th rectification field effect transistor and the 4th rectification field effect transistor connects rectifier unit input, and the 4th, the drain electrode of the 5th rectification field effect transistor all connects rf inputs by capacitance.
According to the preferred version of efficient RFID rectifier unit described in the utility model, the first boostrap circuit comprises field effect transistor the one, six, the 6th capacitance and the 3rd bootstrap capacitor; The drain electrode of the grid of field effect transistor one and field effect transistor six all connects rectifier unit input, the grid of field effect transistor six and the source electrode of field effect transistor one are connected the grid of the 4th rectification field effect transistor simultaneously, and connecing rectifier unit input by the 3rd bootstrap capacitor, the source electrode of the drain electrode of field effect transistor one and field effect transistor six all connects rectifier unit rf inputs by the 6th capacitance;
The second boostrap circuit comprises field effect transistor two, three, the first capacitance and the 4th bootstrap capacitor; The source electrode of the grid of field effect transistor two and field effect transistor three all connects rectifier unit output, the grid of field effect transistor three and the drain electrode of field effect transistor two are connected the grid of the 5th rectification field effect transistor simultaneously, and connecing rectifier unit output by the 4th bootstrap capacitor, the drain electrode of the source electrode of field effect transistor two and field effect transistor three all connects rectifier unit rf inputs by the first capacitance.
The beneficial effect of efficient RFID rectifier described in the utility model and rectification unit is: the utility model utilizes rectifier unit cascade, and rectifier unit output voltage is improved step by step; Rectifier unit adopts boostrap circuit for rectification field effect transistor provides constant bias voltage, reduces effective cut-in voltage of rectification field effect transistor, reduces forward conduction loss, improves conversion efficiency; Simultaneously, utilize the substrate of rectification field effect transistor, the substrate of the rectification field effect transistor that connects rectifier unit input is connected with rectifier unit output, the substrate of the rectification field effect transistor that connects rectifier unit output is connected with rectifier unit input, reduce effective cut-in voltage, improve rectification efficiency; The utility model circuit structure is simple, and cost is low, volume is little, efficiency is high, performance is excellent, effectively improves sensitivity and the communication distance of RFID electronic tag, has a good application prospect.
Accompanying drawing explanation
Fig. 1 is the theory diagram of existing RFID rectifier circuit structure.
Fig. 2 is the rectifier theory diagram that the metal-oxide-semiconductor field effect transistor of diode connection forms.
Fig. 3 is the efficient RFID rectifier theory diagram the utility model proposes.
Fig. 4 is the schematic diagram of rectifier unit.
Fig. 5 is rectifier matching network structure chart.
Fig. 6 is voltage simulation waveform before and after matching network.
Fig. 7 is that initial condition starts V
1the voltage of node and M
1the simulation waveform of source current.
Fig. 8 is initial condition start node V
2voltage waveform.
Fig. 9 is stable state V
1the voltage of node and M
1the simulation waveform of source current.
Figure 10 is that initial condition starts V
6the voltage of node and M
2the simulation waveform of drain current.
Figure 11 is initial condition start node V
4voltage waveform.
Figure 12 is stable state V
6the voltage of node and M
2the simulation waveform of drain current.
Figure 13 is incoming frequency 900MHz, the output waveform of every grade of rectifier cascade when power-14dBm.
Figure 14 is incoming frequency 900MHz, the output waveform of rectifier when power-14dBm.
Figure 15 is the measured value of rectification efficiency.
Embodiment
Referring to Fig. 3 and Fig. 4, efficient RFID rectifier, is made up of n level rectifier unit, and n is more than or equal to 1 natural number; First order rectifier unit input end grounding, first order rectifier unit 1 is exported the input of termination second level rectifier unit 2, and the output of second level rectifier unit 2 connects the input of third level rectifier unit 3; The like, the input of n-1 level rectifier unit N-1 output termination n level rectifier unit N, n level rectifier unit N output is by capacitor C ground connection; The rf inputs V of every grade of rectifier unit
rF /all be connected; And every grade of rectifier unit includes first, second boostrap circuit, the 4th, the 5th rectification field effect transistor M
4, M
5, capacitance C
5with storage capacitor C
2; First, second boostrap circuit is respectively the 4th, the grid of the 5th rectification field effect transistor provides DC offset voltage V2, V4, the 4th rectification field effect transistor M
4substrate and the 5th rectification field effect transistor M
5source electrode meet rectifier unit output V
dC /, and by storage capacitor C
2ground connection; The 5th rectification field effect transistor M
5substrate and the 4th rectification field effect transistor M
4source electrode meet rectifier unit input Vi
/; Four, the drain electrode of the 5th rectification field effect transistor is all by capacitance C
5meet rectifier unit rf inputs V
rF /.
Wherein, the 4th rectification field effect transistor is NMOS pipe, and the 5th rectification field effect transistor is PMOS pipe, and NMOS is managed to M
4substrate receive rectifier unit output, i.e. high potential, manages M by PMOS
5substrate receive rectifier unit input, i.e. electronegative potential, can reduce effective cut-in voltage, improve rectification efficiency.When after rectifier unit cascade, rectifier unit output voltage improves step by step, in the time that the forward power of rectifier equals reverse leakage power and load consumption power sum, and the direct voltage V of output
dCstable.
Principle of the present utility model is: as bias voltage V
2, V
4after foundation, M
4, M
5effective threshold voltage reduce, in the time that the amplitude of RF signal is less than the threshold voltage of metal-oxide-semiconductor field effect transistor, rectifier also can normally be worked, receiving sensitivity is higher.On the other hand, the signal that RFID label chip receives from reader is very small and weak, and for example, in the time that communication distance is 10 meters, label chip receives be about-14dBm of RF signal strength signal intensity, if dipole antenna impedance is 50 Ω, the amplitude of input signal is about V
pP=110mV, is less than the threshold voltage of metal-oxide-semiconductor field effect transistor, is not enough to effectively drive rectifier that it is normally worked.Therefore between antenna and rectifier, conventionally need an impedance matching network L
p, C
p, shown in Figure 5; After impedance transformation, the input impedance of rectifier is enough high, can make rectifier rf inputs V
rFvoltage amplitude be greater than effective threshold voltage, mean that the input sensitivity of rectifier can improve.Shown in Figure 6, Fig. 6 is voltage simulation waveform before and after matching network; In figure, U1 is voltage simulation waveform before matching network, and U2 is voltage simulation waveform after matching network, and simulated conditions is frequency input signal 900MHz, power-14dBm, and after coupling, voltage amplitude increases.
Referring to Fig. 4, the first boostrap circuit comprises field effect transistor the one, six, the 6th capacitance C
6with the 3rd bootstrap capacitor C
3; Field effect transistor one M
1grid and field effect transistor six M
6drain electrode all meet rectifier unit input Vi
/, field effect transistor six M
6grid and field effect transistor one M
1source electrode connect the 4th rectification field effect transistor M simultaneously
4grid, and by the 3rd bootstrap capacitor C
3meet rectifier unit input Vi
/, field effect transistor one M
1drain electrode and field effect transistor six M
6source electrode all by the 6th capacitance C
6meet rectifier unit rf inputs V
rF /;
The second boostrap circuit comprises field effect transistor two, three, the first capacitance C
1lift capacitor C with four selfs
4; Field effect transistor two M
2grid and field effect transistor three M
3source electrode all meet rectifier unit output V
dC /, field effect transistor three M
3grid and field effect transistor two M
2drain electrode connect the 5th rectification field effect transistor M simultaneously
5grid, and by four selfs lift capacitor C
5meet rectifier unit output V
dC /, field effect transistor two M
2source electrode and field effect transistor three M
3drain electrode all by the first capacitance C
1meet rectifier unit rf inputs V
rF /.
Operation principle is, when initial condition, each node voltage is 0, when RFID label antenna receives radiofrequency signal, and in the time of positive half period, M
1reverse leakage current flow to source electrode by drain electrode, to capacitor C
3charging, V
2voltage raises; When negative half-cycle, M
1electric current is flowed to and is leaked level, capacitor C by source electrode
3pass through M
1electric discharge, V
2lower voltage.Shown in Figure 7, Fig. 7 is that initial condition starts V
1the voltage of node and M
1the simulation waveform of source current, simulated conditions is frequency input signal 900MHz, power-14dBm flows out M
1the integration of source current is greater than and flows to M
1the integration of source current, to C
3the integration of charging current is greater than the integration of discharging current, therefore V
2raise gradually, shown in Figure 8.Work as V
2while being elevated to certain value (355mV average), flow out M
1the integration of source current equals to flow to M
1the integration of source current, V
2be stabilized to fixed value, circuit reaches balance, shown in Figure 9.
In like manner, in the time of positive half period, M
2reverse leakage current by source electrode flow to drain electrode, to capacitor C
4charging, V
4voltage raises; When negative half-cycle, M
2electric current flows to source electrode by drain electrode, capacitor C
4pass through M
2electric discharge, V
4lower voltage.Shown in Figure 10, Figure 10 is that initial condition starts V
6the voltage of node and M
2the simulation waveform of drain current, simulated conditions is frequency input signal 900MHz, power-14dBm; Flow out M
2the integration of source current is less than and flows to M
2the integration of source current, to C
4the integration of charging current is less than the integration of discharging current, therefore V
4reduce gradually, shown in Figure 11.Work as V
4while being reduced to certain value (135mV average), flow out M
2the integration of drain current equals to flow to M
2the integration of drain current, V
4be stabilized to fixed value, circuit reaches balance, shown in Figure 12.In the time that circuit reaches balance, V
2voltage is about 355mV, V
4be about-135mV of voltage, has reduced M
4, M
5effective cut-in voltage, improve rectification efficiency.
Consider the tradeoff between reverse leakage current and forward conduction electric current, in specific embodiment, n level rectifier unit is six grades of rectifier units; Be first order rectifier unit input end grounding, the input of first order rectifier unit output termination second level rectifier unit, the output of second level rectifier unit connects the input of third level rectifier unit; The like, the input of the 6th grade of rectifier unit of level V rectifier unit output termination, the 6th grade of rectifier unit output is by capacitor C ground connection; The rf inputs of every grade of rectifier unit is all connected.
After six grades of rectifier cascades, rectifier output voltage improves step by step, shown in Figure 13.In the time that the forward power of rectifier equals reverse leakage power and load consumption power sum, the direct voltage V of output
dCstable.
Simulation results shows: rectifier function is normal, is 900MHz in radio frequency incoming frequency, and power is-14dBm, and when load resistance is 120K Ω, the I/O transient waveform of emulation is shown in Figure 14, and output voltage is about 1.23V, PCE=P
oUT/ P
iN=31.1%.
Table 1 is rectifier measured result, M
4and M
5the gate source voltage of field effect transistor, by boostrap circuit quiescent biasing, has reduced effective threshold voltage of field effect transistor.When DC offset voltage not too large, the not too little and input power of the threshold voltage of MOS field effect transistor hour, reverse leakage current is less, in this case, resistive loss when the energy loss of rectifier mainly concentrates on forward bias, can ignore the power loss that reverse leakage current causes, PCE is higher.When input power is larger, reverse leakage current increases, and the power loss that reverse leakage current causes improves, and PCE reduces, referring to Figure 15, for rectifier efficiency is with the measured curve of input power conversion.
Table 1. rectification efficiency measured result
| Input power (dBm) | Output voltage (V) | Rectification efficiency |
| -14 | 1.1 | 27.63% |
| -13 | 1.3 | 30.65% |
| -12 | 1.46 | 30.71% |
| -11 | 1.61 | 29.67% |
| -10 | 1.73 | 27.21% |
| -9 | 1.84 | 24.45% |
| -8 | 1.93 | 21.37% |
| -5 | 2.13 | 13.04% |
| -2 | 2.27 | 7.42% |
| 1 | 2.38 | 4.09% |
| 4 | 2.5 | 2.26% |
| 7 | 2.6 | 1.23% |
| 10 | 2.77 | 0.70% |
| 13 | 2.81 | 0.36% |
| 16 | 2.66 | 0.16% |
?
| 19 | 2.4 | 0.07% |
| 22 | 1.7 | 0.02% |
| 25 | 0.87 | 0.00% |
In sum, adopt rectifier of the present utility model, greatly improved rectification efficiency, effectively improve sensitivity and the communication distance of RFID electronic tag.
Efficient RFID rectifier unit, this rectifier unit comprises first, second boostrap circuit, the 4th, the 5th rectification field effect transistor, capacitance C
5with storage capacitor C
2; First, second boostrap circuit is respectively the 4th, the grid of the 5th rectification field effect transistor provides direct current biasing; The 4th rectification field effect transistor M
4substrate and the 5th rectification field effect transistor M
5source electrode meet rectifier unit output V
dC /, and by storage capacitor C
2ground connection; The 5th rectification field effect transistor M
5substrate and the 4th rectification field effect transistor M
4source electrode meet rectifier unit input Vi
/; Four, the drain electrode of the 5th rectification field effect transistor is all by capacitance C
5meet rectifier unit rf inputs V
rF /.
In specific embodiment, the first boostrap circuit comprises field effect transistor the one, six, the 6th capacitance C
6with the 3rd bootstrap capacitor C
3; Field effect transistor one M
1grid and field effect transistor six M
6drain electrode all meet rectifier unit input Vi
/, field effect transistor six M
6grid and field effect transistor one M
1source electrode connect the 4th rectification field effect transistor M simultaneously
4grid, and by the 3rd bootstrap capacitor C
3meet rectifier unit input Vi
/, field effect transistor one M
1drain electrode and field effect transistor six M
6source electrode all by the 6th capacitance C
6meet rectifier unit rf inputs V
rF /;
The second boostrap circuit comprises field effect transistor two, three, the first capacitance C
1lift capacitor C with four selfs
4; Field effect transistor two M
2grid and field effect transistor three M
3source electrode all meet rectifier unit output V
dC /, the grid of field effect transistor three M3 and field effect transistor two M
2drain electrode connect the 5th rectification field effect transistor M simultaneously
5grid, and by four selfs lift capacitor C
5meet rectifier unit output V
dC /, field effect transistor two M
2source electrode and field effect transistor three M
3drain electrode all by the first capacitance C
1meet rectifier unit rf inputs V
rF /.
Above embodiment of the present utility model is described, still, the scope that is not limited only to embodiment of the utility model protection.
Claims (5)
1. efficient RFID rectifier, comprises n level rectifier unit, and n is more than or equal to 1 natural number; It is characterized in that: the input of first order rectifier unit (1) output termination second level rectifier unit (2), the output of second level rectifier unit (2) connects the input of third level rectifier unit (3); The like, the input of n-1 level rectifier unit (N-1) output termination n level rectifier unit (N); The rf inputs of every grade of rectifier unit is all connected; And every grade of rectifier unit includes first, second boostrap circuit, the 4th, the 5th rectification field effect transistor, capacitance (C
5) and storage capacitor (C
2); First, second boostrap circuit is respectively the 4th, the grid of the 5th rectification field effect transistor provides direct current biasing; The 4th rectification field effect transistor (M
4) substrate and the 5th rectification field effect transistor (M
5) source electrode meet rectifier unit output (V
dC /), and by storage capacitor (C
2) ground connection; The 5th rectification field effect transistor (M
5) substrate and the 4th rectification field effect transistor (M
4) source electrode meet rectifier unit input (Vi
/); Four, the drain electrode of the 5th rectification field effect transistor is all by capacitance (C
5) meet rectifier unit rf inputs (V
rF /).
2. efficient RFID rectifier according to claim 1, is characterized in that: the first boostrap circuit comprises field effect transistor the one, six, the 6th capacitance (C
6) and the 3rd bootstrap capacitor (C
3); Field effect transistor one (M
1) grid and field effect transistor six (M
6) drain electrode all meet rectifier unit input (Vi
/), field effect transistor six (M
6) grid and field effect transistor one (M
1) source electrode connect the 4th rectification field effect transistor (M simultaneously
4) grid, and by the 3rd bootstrap capacitor (C
3) meet rectifier unit input (Vi
/), field effect transistor one (M
1) drain electrode and field effect transistor six (M
6) source electrode all by the 6th capacitance (C
6) meet rectifier unit rf inputs (V
rF /);
The second boostrap circuit comprises field effect transistor two, three, the first capacitance (C
1) and the 4th bootstrap capacitor (C
4); Field effect transistor two (M
2) grid and field effect transistor three (M
3) source electrode all meet rectifier unit output (V
dC /), field effect transistor three (M
3) grid and field effect transistor two (M
2) drain electrode connect the 5th rectification field effect transistor (M simultaneously
5) grid, and by the 4th bootstrap capacitor (C
5) meet rectifier unit output (V
dC /), field effect transistor two (M
2) source electrode and field effect transistor three (M
3) drain electrode all by the first capacitance (C
1) meet rectifier unit rf inputs (V
rF /).
3. efficient RFID rectifier according to claim 1 and 2, is characterized in that: n level rectifier unit, n gets six.
4. efficient RFID rectifier unit, is characterized in that: this rectifier unit comprises first, second boostrap circuit, the 4th, the 5th rectification field effect transistor, capacitance (C
5) and storage capacitor (C
2); First, second boostrap circuit is respectively the 4th, the grid of the 5th rectification field effect transistor provides direct current biasing; The 4th rectification field effect transistor (M
4) substrate and the 5th rectification field effect transistor (M
5) source electrode meet rectifier unit output (V
dC /), and by storage capacitor (C
2) ground connection; The 5th rectification field effect transistor (M
5) substrate and the 4th rectification field effect transistor (M
4) source electrode meet rectifier unit input (Vi
/); Four, the drain electrode of the 5th rectification field effect transistor is all by capacitance (C
5) meet rectifier unit rf inputs (V
rF /).
5. efficient RFID rectifier unit according to claim 4, is characterized in that: the first boostrap circuit comprises field effect transistor the one, six, the 6th capacitance (C
6) and the 3rd bootstrap capacitor (C
3); Field effect transistor one (M
1) grid and field effect transistor six (M
6) drain electrode all meet rectifier unit input (Vi
/), field effect transistor six (M
6) grid and field effect transistor one (M
1) source electrode connect the 4th rectification field effect transistor (M simultaneously
4) grid, and by the 3rd bootstrap capacitor (C
3) meet rectifier unit input (Vi
/), field effect transistor one (M
1) drain electrode and field effect transistor six (M
6) source electrode all by the 6th capacitance (C
6) meet rectifier unit rf inputs (V
rF /);
The second boostrap circuit comprises field effect transistor two, three, the first capacitance (C
1) and the 4th bootstrap capacitor (C
4); Field effect transistor two (M
2) grid and field effect transistor three (M
3) source electrode all meet rectifier unit output (V
dC /), field effect transistor three (M
3) grid and field effect transistor two (M
2) drain electrode connect the 5th rectification field effect transistor (M simultaneously
5) grid, and by the 4th bootstrap capacitor (C
5) meet rectifier unit output (V
dC /), field effect transistor two (M
2) source electrode and field effect transistor three (M
3) drain electrode all by the first capacitance (C
1) meet rectifier unit rf inputs (V
rF /).
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|---|---|---|---|
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ID=50677611
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Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN103618468A (en) * | 2013-11-11 | 2014-03-05 | 重庆西南集成电路设计有限责任公司 | High-efficiency rectifier constituting RFID electronic tag and rectifier units |
| CN113659856A (en) * | 2021-10-19 | 2021-11-16 | 成都凯路威电子有限公司 | UHF-RFID differential rectification circuit module and differential rectification circuit |
-
2013
- 2013-11-11 CN CN201320706510.1U patent/CN203596755U/en not_active Withdrawn - After Issue
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN103618468A (en) * | 2013-11-11 | 2014-03-05 | 重庆西南集成电路设计有限责任公司 | High-efficiency rectifier constituting RFID electronic tag and rectifier units |
| CN113659856A (en) * | 2021-10-19 | 2021-11-16 | 成都凯路威电子有限公司 | UHF-RFID differential rectification circuit module and differential rectification circuit |
| CN113659856B (en) * | 2021-10-19 | 2022-05-10 | 成都凯路威电子有限公司 | UHF-RFID differential rectification circuit module and differential rectification circuit |
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