CN203217613U - UHF RFID passive label chip power supply circuit - Google Patents
UHF RFID passive label chip power supply circuit Download PDFInfo
- Publication number
- CN203217613U CN203217613U CN 201320202979 CN201320202979U CN203217613U CN 203217613 U CN203217613 U CN 203217613U CN 201320202979 CN201320202979 CN 201320202979 CN 201320202979 U CN201320202979 U CN 201320202979U CN 203217613 U CN203217613 U CN 203217613U
- Authority
- CN
- China
- Prior art keywords
- oxide
- metal
- semiconductor
- circuit
- voltage
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Fee Related
Links
Images
Landscapes
- Dc-Dc Converters (AREA)
Abstract
A UHF RFID passive label chip power supply circuit is disclosed, comprising a voltage-multiplying circuit, a voltage-limiting circuit and a voltage-stabilizing circuit, wherein a radiofrequency signal is received and subjected to voltage-boosting and rectifying operation by the voltage-multiplying circuit; the voltage-multiplying circuit comprises multiple main MOS tubes, multiple feedback MOS tubes, multiple coupling capacitors, and a load capacitor; the grid electrodes of previous stage MOS tubes are connected with the drain electrodes of later stage main MOS tubes in a short-circuited manner, the drain electrode of each main MOS tube is connected with one coupling capacitor, each main MOS tube corresponds to one feedback MOS tube, the drain electrodes of the main MOS tubes are connected with the drain electrodes of the feedback MOS tubes, the source electrodes of the feedback MOS tubes are connected with the source electrodes of the main MOS tubes, and the grid electrodes of the feedback MOS tubes are connected with the drain electrode of the previous stage main MOS tubes. The UHF RFID passive label chip power supply circuit is advantaged by ease of integration and low energy consumption.
Description
Technical field
The utility model relates to a kind of power circuit.
Background technology
(Radio Frequency Identification, RFID) technology is a kind of noncontact automatic identification technology to radio-frequency (RF) identification, identifies target automatically and obtains related data by radiofrequency signal.In recent years, along with carrying out of application such as automatic charge, gate inhibition, animal identification and logistics management, the RFID technology is come into daily life just at a terrific speed.RFID accuracy height, memory space are big, the strong noncontact recognition of durability, can identify high-speed moving object, anti-adverse environment, strong security, high accuracy and security, the unique characteristics that can't forge, can identify a plurality of identifying objects simultaneously of identification code, in widespread use and production, logistics, traffic, the field such as false proof, will replace bar code as the application of wireless remote identification in a lot of fields.
Passive ultra-high frequency radio-frequency (RF) identification UHF-RFID label chip relies on it to need not to be equipped with internal electric source, and price is low, and is in light weight, the advantage that volume is little and being widely used.Passive UHF RFID label is operated in the far-field region of radio frequency electromagnetic field, the distance that is passive label and reader is far away, thereby the radio-frequency (RF) energy that causes label antenna to receive is very low, and voltage amplitude is corresponding very little, and this can't satisfy the supply voltage range value of chip usually.In addition, radio-frequency voltage is alternating voltage, and chip operation needs DC voltage, therefore need carry out rectification to radio-frequency (RF) energy and boost.Finish the radio-frequency front-end that device that rectification boosts is positioned at the passive label chip, be commonly called the voltage multiplying rectifier charge pump, it is the nucleus module of radio-frequency front-end.Although the far-field region of passive label work radio frequency electromagnetic field, but the operating distance of it and reader also can be very near sometimes, when the two distance is near, the energy that label antenna obtains is just very high, and its induced voltage amplitude is also bigger, at this moment the overtension after rectification is boosted, breakdown transistors possibly, damage device, make entire chip receive damage, therefore after rectification is boosted, will carry out the amplitude limit voltage stabilizing.
Rectification boosting circuit at present commonly used is the Dickson charge pump, and there is following shortcoming in the Dickson charge pump: 1, adopt schottky diode as boosting rectifier cell, but in traditional CMOS technology integrated Xiao Te diode complex process, the cost height.2, adopt the metal-oxide-semiconductor of grid leak utmost point short circuit to replace schottky diode, though be convenient to integratedly, have the threshold value loss greatly, the advantage that stray capacitance is big.
The utility model content
In order to overcome the above-mentioned deficiency of prior art, the utility model provide be easy to integrated, the power circuit of a kind of UHF RFID passive label chip that self energy consumption is low.
A kind of power circuit of UHF RFID passive label chip comprises and accepts radiofrequency signal and the voltage-multiplying circuit of its rectification of boosting and the electric signal after the rectification of will boosting are carried out pressure limiting circuit and the mu balanced circuit that the amplitude limit voltage stabilizing is handled; It is characterized in that: described voltage-multiplying circuit comprises a plurality of main metal-oxide-semiconductors, a plurality of feedback metal-oxide-semiconductors, a plurality of coupling capacitances, with a load capacitance, the drain electrode short circuit of the grid of previous stage master's metal-oxide-semiconductor and back one-level master metal-oxide-semiconductor, the drain electrode of each main metal-oxide-semiconductor connects a coupling capacitance, the corresponding feedback metal-oxide-semiconductor of each main metal-oxide-semiconductor, the drain electrode of main metal-oxide-semiconductor is connected with the drain electrode of feedback metal-oxide-semiconductor, the source electrode of feedback metal-oxide-semiconductor is connected with the source electrode of main metal-oxide-semiconductor, and the grid of feedback metal-oxide-semiconductor is connected with the drain electrode of previous stage master metal-oxide-semiconductor.
Further, pressure limiting circuit comprises the major loop of being made up of a plurality of metal-oxide-semiconductors, article two, sign-changing amplifier circuit and switch MOS pipe in parallel with major loop connect to form, adjacent metal-oxide-semiconductor drain and gate short circuit in the major loop, every sign-changing amplifier circuit includes second metal-oxide-semiconductor of first metal-oxide-semiconductor and two formation sign-changing amplifiers; Switch MOS pipe and major loop, sign-changing amplifier circuit are in parallel.
Further, mu balanced circuit comprises backfeed loop and reference voltage base source circuit, and backfeed loop has two branch roads, and every branch road comprises the resistance of two series connection and the metal-oxide-semiconductor between setting and the resistance, the grid of metal-oxide-semiconductor and source shorted.
Increased the feedback metal-oxide-semiconductor in the voltage-multiplying circuit of the present utility model, the grid of previous stage metal-oxide-semiconductor is by the Control of Voltage of back one-level metal-oxide-semiconductor.Make that like this feedback metal-oxide-semiconductor is in linear conducting state behind the circuit steady operation, can avoid the loss of threshold voltage with this, thereby improve gain and increase output voltage.
The utlity model has be easy to integrated, self advantage of low energy consumption.
Description of drawings
Fig. 1 is block diagram of the present utility model.
Fig. 2 is the circuit diagram of Dickson charge pump.
Fig. 3 is voltage-multiplying circuit figure.
Fig. 4 is pressure limiting circuit figure.
Fig. 5 is mu balanced circuit figure.
Embodiment
A kind of power circuit of UHF RFID passive label chip comprises and accepts radiofrequency signal and the voltage-multiplying circuit of its rectification of boosting and the electric signal after the rectification of will boosting are carried out pressure limiting circuit and the mu balanced circuit that the amplitude limit voltage stabilizing is handled; It is characterized in that: described voltage-multiplying circuit comprises a plurality of main metal-oxide-semiconductors, a plurality of feedback metal-oxide-semiconductors, a plurality of coupling capacitances, with a load capacitance, the drain electrode short circuit of the grid of previous stage master's metal-oxide-semiconductor and back one-level master metal-oxide-semiconductor, the drain electrode of each main metal-oxide-semiconductor connects a coupling capacitance, the corresponding feedback metal-oxide-semiconductor of each main metal-oxide-semiconductor, the drain electrode of main metal-oxide-semiconductor is connected with the drain electrode of feedback metal-oxide-semiconductor, the source electrode of feedback metal-oxide-semiconductor is connected with the source electrode of main metal-oxide-semiconductor, and the grid of feedback metal-oxide-semiconductor is connected with the drain electrode of previous stage master metal-oxide-semiconductor.
As shown in Figure 3, the voltage-multiplying circuit of present embodiment is made of 4N+2 NMOS pipe and 2N+1 coupling capacitance and a load capacitance, and wherein N is the progression of voltage-multiplying circuit.
M
D1-M
D2NIdentical with Dickson circuit connecting among Fig. 2, grid and drain electrode short circuit, series connection mutually.M
S1-M
S2NBe back level feedback control structure, the grid of previous stage pipe is by the node voltage control of back one-level.Make M behind the circuit steady operation like this
S1-M
S2NBe in linear conducting state, can avoid the loss of threshold voltage with this, thereby improve gain and increase output voltage.
In the starting stage of circuit working, bias voltage is not also set up, and field effect transistor MD is the electric current primary path.After circuit working was stable, bias voltage was set up, and was at this moment mainly finished the transmission of electric charge by MS.At the negative half-cycle of radiofrequency signal, MS
2n-1Conducting, MS
2n-2End, form C
2n-1, MS
2n-1And C
2nCharge circuit, electric charge is by C
2n-1Transfer to C
2nAt the positive half period of radiofrequency signal, in contrast, electric charge is by C
2nTransfer to C
2n+1, n wherein 〉=1.By the electric charge accumulation of one-level one-level, to load capacitance C
LCharging finally forms a comparatively galvanic current pressure at output terminal.
It is less that coupling capacitance should be chosen the appearance value, and the appearance value is big can to take bigger chip area on the one hand, can bring the certain power loss in addition.Load capacitance is owing to storing more electric charge so that for late-class circuit work provides energy, so should choose appearance value electric capacity more greatly.
Field effect transistor MS can choose different threshold values with MD, and general should satisfy:
V
ThmsV
Thmd, can suppress reverse leakage like this, avoid it to the weakening of voltage gain.
Along with the increase of progression, it is big that output voltage values becomes, and power attenuation also increases thereupon.For taking into account the two, be that 1V is example with the operating voltage, select voltage-multiplying circuit progression N=6.
Pressure limiting circuit comprises the major loop of being made up of a plurality of metal-oxide-semiconductors, article two, sign-changing amplifier circuit and switch MOS pipe in parallel with major loop connect to form, adjacent metal-oxide-semiconductor drain and gate short circuit in the major loop, every sign-changing amplifier circuit includes second metal-oxide-semiconductor of first metal-oxide-semiconductor and two formation sign-changing amplifiers; Switch MOS pipe and major loop, sign-changing amplifier circuit are in parallel.
As shown in Figure 4, pressure limiting circuit is made of 12 metal-oxide-semiconductors, and M1 ~ M4, M6 ~ M7, M9 ~ M10 are the PMOS pipe, and all the other are the NMOS pipe.
The input of pressure limiting circuit and the output of voltage-multiplying circuit, M1 ~ M5 pipe is connected with the diode connection, its turning-on voltage:
Vopen=?4V
THP+V
THN
V wherein
THPAnd V
THNBe respectively the threshold voltage of P pipe and N pipe.Because the source of M1 ~ M5 lining electric potential difference V
SB=0, do not serve as a contrast inclined to one side effect, so the major loop comparative voltage can not change with the variation of VDD.
M5 manages with NMOS, is to mate for the cut-in voltage with the M12 pipe.Next two loops, M7 and M8, M10 and M11 constitute two inverter structures respectively, form a buffer amplifier.
As VDD during less than deboost, the grid voltage strictness of M12 pipe equals 0; When VDD has just surpassed deboost, by the voltage V of the drain electrode sampling of M5
THNBe cushioned amplifier and be amplified to about VDD-2V
THP, make the M12 pipe open earial drainage rapidly, improved voltage-regulation coefficient greatly.
M6 adopts the mode of diode to be connected with the M9 pipe, makes phase inverter be operated in suitable operating voltage, reduces power consumption.
Mu balanced circuit comprises backfeed loop and reference voltage base source circuit, and backfeed loop has two branch roads, and every branch road comprises the resistance of two series connection and the metal-oxide-semiconductor between setting and the resistance, the grid of metal-oxide-semiconductor and source shorted.
The mu balanced circuit purpose mainly is to provide stable working power for each operational module of chip rear end.As shown in Figure 5, the input of mu balanced circuit and the output of pressure limiting circuit, wherein V
ReferenceBe reference voltage, provided by the reference circuit of chip internal.
The ultimate principle of mu balanced circuit is the backfeed loop by R1-R4 and NM1, NM2, compares with the reference voltage base source, regulates the PM1 tube current, thereby makes V
OutKeep it stable.
The big transistorized grid width that the PM1 pipe will adopt in design is to provide all required electric currents of chip internal.
It is excessive to consider that the resistance feedback can cause resistance to account for the area of domain, is unfavorable for the reduction of cost, and therefore the form that adopts metal-oxide-semiconductor and resistance to mutually combine constitutes feedback network.
Increased the feedback metal-oxide-semiconductor in the voltage-multiplying circuit of the present utility model, the grid of previous stage metal-oxide-semiconductor is by the Control of Voltage of back one-level metal-oxide-semiconductor.Make that like this feedback metal-oxide-semiconductor is in linear conducting state behind the circuit steady operation, can avoid the loss of threshold voltage with this, thereby improve gain and increase output voltage.
The utlity model has be easy to integrated, self advantage of low energy consumption.
The described content of this instructions embodiment only is enumerating the way of realization of utility model design; protection domain of the present utility model should not be regarded as only limiting to the concrete form that embodiment states, protection domain of the present utility model also reach in those skilled in the art according to the utility model design the equivalent technologies means that can expect.
Claims (3)
1. the power circuit of a UHF RFID passive label chip comprises and accepts radiofrequency signal and voltage-multiplying circuit and the electric signal after the rectification of will boosting of its rectification of boosting carried out pressure limiting circuit and the mu balanced circuit that the amplitude limit voltage stabilizing is handled; It is characterized in that: described voltage-multiplying circuit comprises a plurality of main metal-oxide-semiconductors, a plurality of feedback metal-oxide-semiconductors, a plurality of coupling capacitances, with a load capacitance, the drain electrode short circuit of the grid of previous stage master's metal-oxide-semiconductor and back one-level master metal-oxide-semiconductor, the drain electrode of each main metal-oxide-semiconductor connects a coupling capacitance, the corresponding feedback metal-oxide-semiconductor of each main metal-oxide-semiconductor, the drain electrode of main metal-oxide-semiconductor is connected with the drain electrode of feedback metal-oxide-semiconductor, the source electrode of feedback metal-oxide-semiconductor is connected with the source electrode of main metal-oxide-semiconductor, and the grid of feedback metal-oxide-semiconductor is connected with the drain electrode of previous stage master metal-oxide-semiconductor.
2. the power circuit of UHF RFID passive label chip as claimed in claim 1, it is characterized in that: pressure limiting circuit comprises the major loop of being made up of a plurality of metal-oxide-semiconductors, article two, sign-changing amplifier circuit and switch MOS pipe in parallel with major loop connect to form, adjacent metal-oxide-semiconductor drain and gate short circuit in the major loop, every sign-changing amplifier circuit includes second metal-oxide-semiconductor of first metal-oxide-semiconductor and two formation sign-changing amplifiers; Switch MOS pipe and major loop, sign-changing amplifier circuit are in parallel.
3. the power circuit of UHF RFID passive label chip as claimed in claim 2, it is characterized in that: mu balanced circuit comprises backfeed loop and reference voltage base source circuit, backfeed loop has two branch roads, every branch road comprises the resistance of two series connection and the metal-oxide-semiconductor between setting and the resistance, the grid of metal-oxide-semiconductor and source shorted.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN 201320202979 CN203217613U (en) | 2013-04-19 | 2013-04-19 | UHF RFID passive label chip power supply circuit |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN 201320202979 CN203217613U (en) | 2013-04-19 | 2013-04-19 | UHF RFID passive label chip power supply circuit |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN203217613U true CN203217613U (en) | 2013-09-25 |
Family
ID=49207130
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN 201320202979 Expired - Fee Related CN203217613U (en) | 2013-04-19 | 2013-04-19 | UHF RFID passive label chip power supply circuit |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN203217613U (en) |
Cited By (9)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN104899636A (en) * | 2015-05-12 | 2015-09-09 | 广州中大微电子有限公司 | Power supply management device applied to RFID reader full chip and method thereof |
| CN105610332A (en) * | 2015-12-23 | 2016-05-25 | 浙江大学 | Threshold voltage self-compensating RF-DC converter based on CMOS technology |
| CN105740932A (en) * | 2014-12-29 | 2016-07-06 | 英飞凌科技股份有限公司 | Chip card |
| WO2016123756A1 (en) * | 2015-02-04 | 2016-08-11 | 中国科学院微电子研究所 | Threshold compensation rectification circuit |
| CN105991047A (en) * | 2015-02-04 | 2016-10-05 | 中国科学院微电子研究所 | Threshold compensation rectifying circuit |
| CN106849711A (en) * | 2017-03-13 | 2017-06-13 | 北京工业大学 | A kind of dual output rectification circuit suitable for the passive UHF chips of human body implantation type |
| CN108736708A (en) * | 2018-05-04 | 2018-11-02 | 思力科（深圳）电子科技有限公司 | A kind of charge pump and its start method |
| CN114461006A (en) * | 2022-01-17 | 2022-05-10 | 深圳市诚芯微科技股份有限公司 | Reference voltage and voltage doubling circuit |
| CN115224961A (en) * | 2022-08-24 | 2022-10-21 | 厦门大学 | Rectifier suitable for high frequency and ultrahigh frequency |
-
2013
- 2013-04-19 CN CN 201320202979 patent/CN203217613U/en not_active Expired - Fee Related
Cited By (14)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US9984321B2 (en) | 2014-12-29 | 2018-05-29 | Infineon Technologies Ag | Chip card and control element |
| CN105740932B (en) * | 2014-12-29 | 2019-01-29 | 英飞凌科技股份有限公司 | Chip card |
| CN105740932A (en) * | 2014-12-29 | 2016-07-06 | 英飞凌科技股份有限公司 | Chip card |
| WO2016123756A1 (en) * | 2015-02-04 | 2016-08-11 | 中国科学院微电子研究所 | Threshold compensation rectification circuit |
| CN105991047A (en) * | 2015-02-04 | 2016-10-05 | 中国科学院微电子研究所 | Threshold compensation rectifying circuit |
| CN105991047B (en) * | 2015-02-04 | 2018-09-14 | 中国科学院微电子研究所 | Valve value compensation rectification circuit |
| CN104899636A (en) * | 2015-05-12 | 2015-09-09 | 广州中大微电子有限公司 | Power supply management device applied to RFID reader full chip and method thereof |
| CN105610332B (en) * | 2015-12-23 | 2018-10-12 | 浙江大学 | The self-compensating RF-DC converters of threshold voltage based on CMOS technology |
| CN105610332A (en) * | 2015-12-23 | 2016-05-25 | 浙江大学 | Threshold voltage self-compensating RF-DC converter based on CMOS technology |
| CN106849711A (en) * | 2017-03-13 | 2017-06-13 | 北京工业大学 | A kind of dual output rectification circuit suitable for the passive UHF chips of human body implantation type |
| CN108736708A (en) * | 2018-05-04 | 2018-11-02 | 思力科（深圳）电子科技有限公司 | A kind of charge pump and its start method |
| CN108736708B (en) * | 2018-05-04 | 2020-09-15 | 莫冰 | Charge pump and starting method thereof |
| CN114461006A (en) * | 2022-01-17 | 2022-05-10 | 深圳市诚芯微科技股份有限公司 | Reference voltage and voltage doubling circuit |
| CN115224961A (en) * | 2022-08-24 | 2022-10-21 | 厦门大学 | Rectifier suitable for high frequency and ultrahigh frequency |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| CN203217613U (en) | UHF RFID passive label chip power supply circuit | |
| US10230341B2 (en) | High efficiency voltage mode class D topology | |
| Bakhtiar et al. | A high-efficiency CMOS rectifier for low-power RFID tags | |
| CN104319996A (en) | Synchronous rectification step-down converter chip with high-precision current detection function | |
| Kamalinejad et al. | An efficiency enhancement technique for CMOS rectifiers with low start-up voltage for UHF RFID tags | |
| CN103618468B (en) | Form high efficiency rectifier and the rectification unit of RFID | |
| CN103138568B (en) | Rectifying circuit and radio frequency identification (RFID) chip | |
| TWI629846B (en) | Device for harvesting and managing wireless energy | |
| KR20170021206A (en) | Auxiliary charge pump for a rectifier of an rfid transponder | |
| CN206894365U (en) | Reactance skew compensation mechanism, wireless power transmission unit and wireless charging system applied to wireless charging | |
| JP6300349B2 (en) | Circuit including switching element, rectifier element, and charge storage element | |
| CN102270313B (en) | Power on reset circuit of RFID (Radio Frequency Identification) tag | |
| CN102063638B (en) | Rectification circuit for radio frequency electronic tags | |
| CN101692607A (en) | High stability clock circuit for passive high-frequency radio frequency identification chip | |
| Salter et al. | RF energy scavenging system utilising switched capacitor DC-DC converter | |
| CN102474250A (en) | Trigger circuit and rectifier, particularly for a self-powered microsystem comprising a piezoelectric microgenerator | |
| Syed et al. | RF energy harvesting chip powered sensor node | |
| AU2017374541B2 (en) | Power supply rectification circuit for electronic tag | |
| CN101783599A (en) | Voltage doubling rectifying circuit | |
| Kamalinejad et al. | A CMOS rectifier with an extended high-efficiency region of operation | |
| CN104269946A (en) | Radio frequency energy collector | |
| Yuan et al. | Design techniques for power harvesting of passive wireless microsensors | |
| JPWO2007063887A1 (en) | Start signal detection circuit | |
| CN115224961A (en) | Rectifier suitable for high frequency and ultrahigh frequency | |
| CN101989811B (en) | Rectifier circuit, label circuit and chip for high-frequency radio frequency identification device (RFID) label |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| C14 | Grant of patent or utility model | ||
| GR01 | Patent grant | ||
| CF01 | Termination of patent right due to non-payment of annual fee | ||
| CF01 | Termination of patent right due to non-payment of annual fee |
Granted publication date: 20130925 Termination date: 20170419 |