CN203491264U - High-power glass-bead instantaneous-inhibition diode with high temperature resistance - Google Patents
High-power glass-bead instantaneous-inhibition diode with high temperature resistance Download PDFInfo
- Publication number
- CN203491264U CN203491264U CN201320545721.1U CN201320545721U CN203491264U CN 203491264 U CN203491264 U CN 203491264U CN 201320545721 U CN201320545721 U CN 201320545721U CN 203491264 U CN203491264 U CN 203491264U
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- Prior art keywords
- instantaneous
- high temperature
- crystal grain
- diode
- molybdenum
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
- H01L24/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
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- Engineering & Computer Science (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Connections Effected By Soldering, Adhesion, Or Permanent Deformation (AREA)
Abstract
The utility model provides a high-power glass-bead instantaneous-inhibition diode with high temperature resistance, and the diode is used for solving problems that a conventional diode is liable to be damaged, the edge of a crystalline grain is liable to be worn, and a large current cannot be withstood. The diode comprises a diode body. Two ends of the diode body are respectively connected with a soldering lug. The other end of each soldering lug is connected with a lead. The diode body comprises the crystalline grains and molybdenum grains, wherein the numbers of the crystalline grains and molybdenum grains are respectively two or more. The crystalline grains and molybdenum grains are connected at intervals. The exterior of the diode body is provided with a passivation layer which is made of glass. The surface of each crystalline grain is coated with an aluminum film which is used for welding. Each crystalline grain is in a circular structure. The leads are made of copper-covered steel. The surface of each is coated with a tin film.
Description
Technical field
The utility model relates to a kind of instantaneous twin zener dioder, relates in particular to the instantaneous twin zener dioder of the high temperature resistant bead of a kind of high power.
Background technology
The instantaneous twin zener dioder of commonly using at present, the junction temperature of assurance is 150 degree, and general crystal grain employing square structure, the drawback that square tube core brings is that wedge angle is difficult for protection, easily occurs that sharp corner punctures; Conventional method is to adopt the square crystal grain of glass passivation protection, and crystal grain edge glass protective layer is thinner, cannot resistant to elevated temperatures requirement, can only guarantee the junction temperature of 150 degree, and cannot meet the high temperature requirement of 175 degree; Along with more and more higher to the requirement of instantaneous twin zener dioder power, how to improve the emphasis that its power and heat-resisting ability become research.
Utility model content
The deficiency that the utility model exists for prior art; provide the high temperature resistant bead of a kind of high power instantaneous twin zener dioder, solved the problem that conventional diode easily occurs damage, crystal grain edge passivation protection is bad and cannot bears large electric current under high temperature or high pressure.
The technical scheme that the utility model solves the problems of the technologies described above is as follows: a kind of high power the is high temperature resistant instantaneous twin zener dioder of bead, comprise diode body, the two ends of described diode body are respectively connected with a weld tabs, the other end of described each weld tabs is respectively connected with a lead-in wire, described diode body comprises crystal grain and molybdenum grain, described crystal grain and molybdenum grain are two or more, and described crystal grain and molybdenum intergranular are every connection.
Further, described diode body exterior is provided with a passivation layer, and described passivation layer is glass material.
Further, the surface of described crystal grain is coated with the aluminium film of one deck for welding.
Further, described crystal grain is circular configuration.
Further, described lead-in wire is copper covered steel material.
Further, the appearance of described lead-in wire is coated with one deck tin film.
The beneficial effects of the utility model are: the utility model adopts molybdenum grain and crystal grain form separately, because the thermal coefficient of expansion of molybdenum grain and crystal grain is close, when temperature jump, can cushion because of the internal stress of expanding with heat and contract with cold and HTHP brings, guaranteed that crystal grain does not damage, improved greatly the reliability of product; At grain surface, aluminize, convenient and molybdenum grain welds; Crystal grain adopts circular, the phenomenon that can avoid wedge angle to puncture; Passivation layer adopts glass material, has improved the junction temperature temperature of diode; Adopt crystal grain and molybdenum grain cascaded structure, improved high power and the large electric current ability to bear of instantaneous twin zener dioder.
Accompanying drawing explanation
Fig. 1 is structural representation of the present utility model;
Fig. 2 is the structural representation of the utility model diode body;
Fig. 3 is the schematic top plan view of the utility model crystal grain;
Fig. 4 is the side cross-sectional schematic of this practical crystal grain;
Fig. 5 is the side cross-sectional schematic of the utility model lead-in wire.
Wherein, 1, diode body; 11, crystal grain; 12, molybdenum grain; 2, weld tabs; 3, lead-in wire; 4, passivation layer; 5, aluminium film; 6, tin film.
Embodiment
Below in conjunction with accompanying drawing, principle of the present utility model and feature are described, example, only for explaining the utility model, is not intended to limit scope of the present utility model.
A kind of high power the is high temperature resistant instantaneous twin zener dioder of bead, comprise diode body 1, the two ends of described diode body 1 are respectively connected with a weld tabs 2, the other end of described each weld tabs 2 is respectively connected with a lead-in wire 3, described diode body 1 comprises crystal grain 11 and molybdenum grain 12, described crystal grain 11 and molybdenum grain 12 are two or more, and described crystal grain 11 and molybdenum grain 12 intervals connect.
Described diode body 1 outside is provided with a passivation layer 4, and described passivation layer 4 is glass material.
The surface of described crystal grain 11 is coated with the aluminium film 5 of one deck for welding.
Described crystal grain 11 is circular configuration.
Described lead-in wire 3 is copper covered steel material.
The appearance of described lead-in wire 3 is coated with one deck tin film 6.
The foregoing is only preferred embodiment of the present utility model, not in order to limit the utility model, all within spirit of the present utility model and principle, any modification of doing, be equal to replacement, improvement etc., within all should being included in protection range of the present utility model.
Claims (6)
1. the instantaneous twin zener dioder of the high temperature resistant bead of high power, comprise diode body, the two ends of described diode body are respectively connected with a weld tabs, the other end of described each weld tabs is respectively connected with a lead-in wire, it is characterized in that: described diode body comprises crystal grain and molybdenum grain, described crystal grain and molybdenum grain are two or more, and described crystal grain and molybdenum intergranular are every connection.
2. the instantaneous twin zener dioder of the high temperature resistant bead of high power according to claim 1, is characterized in that: described diode body exterior is provided with a passivation layer, and described passivation layer is glass material.
3. the instantaneous twin zener dioder of the high temperature resistant bead of high power according to claim 1, is characterized in that: the surface of described crystal grain is coated with the aluminium film of one deck for welding.
4. the instantaneous twin zener dioder of the high temperature resistant bead of high power according to claim 3, is characterized in that: described crystal grain is circular configuration.
5. the instantaneous twin zener dioder of the high temperature resistant bead of high power according to claim 1, is characterized in that: described lead-in wire is copper covered steel material.
6. the instantaneous twin zener dioder of the high temperature resistant bead of high power according to claim 5, is characterized in that: the appearance of described lead-in wire is coated with one deck tin film.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201320545721.1U CN203491264U (en) | 2013-09-03 | 2013-09-03 | High-power glass-bead instantaneous-inhibition diode with high temperature resistance |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201320545721.1U CN203491264U (en) | 2013-09-03 | 2013-09-03 | High-power glass-bead instantaneous-inhibition diode with high temperature resistance |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN203491264U true CN203491264U (en) | 2014-03-19 |
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Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201320545721.1U Expired - Fee Related CN203491264U (en) | 2013-09-03 | 2013-09-03 | High-power glass-bead instantaneous-inhibition diode with high temperature resistance |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN203491264U (en) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN105932071A (en) * | 2016-06-20 | 2016-09-07 | 滨州德润电子有限公司 | Low-temperature difficult-to-damage high-power diode |
-
2013
- 2013-09-03 CN CN201320545721.1U patent/CN203491264U/en not_active Expired - Fee Related
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN105932071A (en) * | 2016-06-20 | 2016-09-07 | 滨州德润电子有限公司 | Low-temperature difficult-to-damage high-power diode |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| GR01 | Patent grant | ||
| GR01 | Patent grant | ||
| CF01 | Termination of patent right due to non-payment of annual fee |
Granted publication date: 20140319 Termination date: 20140903 |
|
| EXPY | Termination of patent right or utility model |